ES401458A1 - Improvements in underwater channel coupled devices. (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvements in underwater channel coupled devices. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES401458A1
ES401458A1 ES401458A ES401458A ES401458A1 ES 401458 A1 ES401458 A1 ES 401458A1 ES 401458 A ES401458 A ES 401458A ES 401458 A ES401458 A ES 401458A ES 401458 A1 ES401458 A1 ES 401458A1
Authority
ES
Spain
Prior art keywords
translation
machine
legally binding
google translate
coupled devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES401458A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES401458A1 publication Critical patent/ES401458A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Control Of Eletrric Generators (AREA)

Abstract

Improvements in coupled, underground channel charging devices, characterized in that they comprise a semiconductor storage layer bonded on each major plane by a rectifying barrier and means for influencing said storage layer in a manner that provides a multitude of energy-free states within of the aforementioned layer that have energy averages different from that of the states of the contours by a greater amount of kt, where k is the boltzann constant and t is the temperature. (Machine-translation by Google Translate, not legally binding)
ES401458A 1971-04-06 1972-04-05 Improvements in underwater channel coupled devices. (Machine-translation by Google Translate, not legally binding) Expired ES401458A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13172171A 1971-04-06 1971-04-06
US13172271A 1971-04-06 1971-04-06

Publications (1)

Publication Number Publication Date
ES401458A1 true ES401458A1 (en) 1975-09-01

Family

ID=26829735

Family Applications (1)

Application Number Title Priority Date Filing Date
ES401458A Expired ES401458A1 (en) 1971-04-06 1972-04-05 Improvements in underwater channel coupled devices. (Machine-translation by Google Translate, not legally binding)

Country Status (11)

Country Link
JP (1) JPS522793B1 (en)
BE (1) BE781627A (en)
CH (1) CH544375A (en)
DE (1) DE2216060C3 (en)
ES (1) ES401458A1 (en)
FR (1) FR2132441B1 (en)
HK (1) HK35176A (en)
IE (1) IE36249B1 (en)
IT (1) IT954399B (en)
NL (1) NL167056B (en)
SE (1) SE383573B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5318155B2 (en) * 1971-12-29 1978-06-13
NL165886C (en) 1972-04-03 1981-05-15 Hitachi Ltd SEMICONDUCTOR DEVICE OF THE LOAD-CONNECTED TYPE FOR STORING AND IN COMPLIANT TRANSFER OF PACKAGES OF MAJORITY CARRIERS.
NL181766C (en) * 1973-03-19 1987-10-16 Philips Nv LOAD-COUPLED SEMICONDUCTOR CIRCUIT, WHICH PACKAGES MAY BE TRANSFERRED FROM A SEMICONDUCTOR LAYER TO A SEMI-CONDUCTOR LAYER BY A SEMI-CONDUCTOR LAYER.
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus
GB1595253A (en) * 1977-01-24 1981-08-12 Hitachi Ltd Solid-state imaging devices
DE2713876C2 (en) * 1977-03-29 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Charge coupled element (CCD)
DE2743245A1 (en) * 1977-09-26 1979-04-05 Siemens Ag CHARGE-COUPLED COMPONENT

Also Published As

Publication number Publication date
NL167056B (en) 1981-05-15
HK35176A (en) 1976-06-18
FR2132441B1 (en) 1976-10-29
JPS522793B1 (en) 1977-01-24
DE2216060C3 (en) 1980-01-03
DE2216060B2 (en) 1977-01-20
AU4079372A (en) 1973-09-06
NL7204528A (en) 1972-10-10
BE781627A (en) 1972-07-31
FR2132441A1 (en) 1972-11-17
CH544375A (en) 1973-11-15
IE36249B1 (en) 1976-09-15
SE383573B (en) 1976-03-15
DE2216060A1 (en) 1972-10-12
IT954399B (en) 1973-08-30
IE36249L (en) 1972-10-06

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