ES358070A1 - Improvements in the construction of tension regulators for actionable generators at very variable speed. (Machine-translation by Google Translate, not legally binding) - Google Patents

Improvements in the construction of tension regulators for actionable generators at very variable speed. (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES358070A1
ES358070A1 ES358070A ES358070A ES358070A1 ES 358070 A1 ES358070 A1 ES 358070A1 ES 358070 A ES358070 A ES 358070A ES 358070 A ES358070 A ES 358070A ES 358070 A1 ES358070 A1 ES 358070A1
Authority
ES
Spain
Prior art keywords
generators
translation
construction
emitter
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES358070A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of ES358070A1 publication Critical patent/ES358070A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Control Of Eletrric Generators (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

Improvements in the construction of voltage regulators for generators operable at very variable speeds, especially for vehicle light generators, which contains a power transistor that is in series with its emitter-collector path in relation to the field winding in derivation of the generator and a control transistor acting on it, whose base is connected through a zener diode, which serves as an emitter of the nominal value of the voltage, with the output voltage of the generator or with a voltage proportional to it and whose the emitter-base path is bridged by a resistor, characterized in that the control transistor, the zener diode and the resistor are mounted on a common semiconductor insert, especially a silicon insert, preferably according to the planar technique and, because this insert semiconductor is held together with a semi-conductor body in the form of a plate containing the transistor power, on a common bushing plate. (Machine-translation by Google Translate, not legally binding)
ES358070A 1967-09-12 1968-09-12 Improvements in the construction of tension regulators for actionable generators at very variable speed. (Machine-translation by Google Translate, not legally binding) Expired ES358070A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB0094402 1967-09-12

Publications (1)

Publication Number Publication Date
ES358070A1 true ES358070A1 (en) 1970-04-16

Family

ID=6987552

Family Applications (1)

Application Number Title Priority Date Filing Date
ES358070A Expired ES358070A1 (en) 1967-09-12 1968-09-12 Improvements in the construction of tension regulators for actionable generators at very variable speed. (Machine-translation by Google Translate, not legally binding)

Country Status (10)

Country Link
JP (1) JPS5238203B1 (en)
AT (1) AT284969B (en)
BE (1) BE720684A (en)
CH (1) CH471497A (en)
DK (1) DK131530B (en)
ES (1) ES358070A1 (en)
NL (1) NL6812964A (en)
PL (1) PL80749B1 (en)
SE (1) SE331310B (en)
YU (1) YU32046B (en)

Also Published As

Publication number Publication date
NL6812964A (en) 1969-03-14
DE1588072B2 (en) 1975-10-23
BE720684A (en) 1969-02-17
DK131530B (en) 1975-07-28
DE1588072A1 (en) 1971-04-01
JPS5238203B1 (en) 1977-09-28
AT284969B (en) 1970-10-12
DK131530C (en) 1975-12-22
CH471497A (en) 1969-04-15
PL80749B1 (en) 1975-08-30
YU214768A (en) 1973-08-31
SE331310B (en) 1970-12-21
YU32046B (en) 1974-02-28

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