ES331246A1 - Metodo para preparar monocristales de un fosfuro. - Google Patents

Metodo para preparar monocristales de un fosfuro.

Info

Publication number
ES331246A1
ES331246A1 ES0331246A ES331246A ES331246A1 ES 331246 A1 ES331246 A1 ES 331246A1 ES 0331246 A ES0331246 A ES 0331246A ES 331246 A ES331246 A ES 331246A ES 331246 A1 ES331246 A1 ES 331246A1
Authority
ES
Spain
Prior art keywords
phosphide
metal
translation
machine
legally binding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0331246A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of ES331246A1 publication Critical patent/ES331246A1/es
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44Gallium phosphide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62Whiskers or needles
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/06Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
ES0331246A 1965-09-16 1966-09-15 Metodo para preparar monocristales de un fosfuro. Expired ES331246A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US487829A US3379502A (en) 1965-09-16 1965-09-16 Single crystal phosphide production

Publications (1)

Publication Number Publication Date
ES331246A1 true ES331246A1 (es) 1967-08-01

Family

ID=23937270

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0331246A Expired ES331246A1 (es) 1965-09-16 1966-09-15 Metodo para preparar monocristales de un fosfuro.

Country Status (5)

Country Link
US (1) US3379502A (cs)
DE (1) DE1544193A1 (cs)
ES (1) ES331246A1 (cs)
GB (1) GB1089709A (cs)
NL (1) NL6611421A (cs)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115417390B (zh) * 2022-10-18 2023-07-28 太原理工大学 一种单晶紫磷的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2871100A (en) * 1955-07-22 1959-01-27 Rca Corp Method of preparing indium phosphide
US2921905A (en) * 1956-08-08 1960-01-19 Westinghouse Electric Corp Method of preparing material for semiconductor applications
US3008805A (en) * 1959-06-09 1961-11-14 Gen Electric Preparation of metal phosphides
NL125503C (cs) * 1959-06-22
GB949945A (en) * 1960-09-14 1964-02-19 Ass Elect Ind Improvements relating to the preparation of metal arsenides and/or phosphides

Also Published As

Publication number Publication date
NL6611421A (cs) 1967-03-17
GB1089709A (en) 1967-11-08
US3379502A (en) 1968-04-23
DE1544193A1 (de) 1971-01-28

Similar Documents

Publication Publication Date Title
ES304491A1 (es) Un metodo de preparar un material de revestimiento electroluminiscente, blanco, de un solo componente, a base de sulfuro de cinc.
DK134171B (da) Fremgangsmåde til regulering af plantevækst.
ES287732A1 (es) Procedimiento de cultivo de cristales de fosfuro de galio y de arseniuro de galio
ES331246A1 (es) Metodo para preparar monocristales de un fosfuro.
CA952414A (en) Vapor transport method for growing crystals
ZA712805B (en) Compositions and process for regulating plant growth
ZA75942B (en) Agents for regulating plant growth
CH453791A (de) Zusammensetzung zur Verhinderung von unerwünschtem Pflanzenwachstum
AT338841B (de) Zusammensetzung zur pflanzenwachstumsregulation
ZA756390B (en) Agents for regulating plant growth
DK128142B (da) Middel til regulering af plantevækst.
JPS51128655A (en) Compound materials for low temperature high tensile alminum alloy
ES365930A1 (es) Un metodo de fabricar cristales, particularmente cristales filamentosos.
ES295503A1 (es) Método para regular el crecimiento de las plantas
ZA721959B (en) Agents for regulating plant growth
BG16424A3 (bg) Състав и метод за регулиране растежа на растенията
CY1021A (en) Plant growth regulating compositions containing betahaloethylsilanes
DK132203B (da) Fremgangsmåde til kontrol af uønsket plantevækst.
AU8171675A (en) Phospholanium salt compositions for regulating plant growth
ES251331A1 (es) Procedimiento para la preparaciën de sales complejas de hierro
ES368464A1 (es) Metodo para retirar, de soluciones acidas, compuestos de tierras raras y otros metales.
ES330881A1 (es) Procedimiento para preparar una resina estable al calor y a la luz.
GB1002495A (en) Improvements in or relating to sulphur infusers
ES360828A1 (es) Un procedimiento de diazotipia empleando 2,3-dihidroxi-pi- ridina como componente copulativo.
ES326848A1 (es) Dispositivo para impedir los depositos en las paredes de los aparatos de cristalizacion por evaporacion en marcha continua.