ES2622461R1 - Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering - Google Patents

Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering Download PDF

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Publication number
ES2622461R1
ES2622461R1 ES201531939A ES201531939A ES2622461R1 ES 2622461 R1 ES2622461 R1 ES 2622461R1 ES 201531939 A ES201531939 A ES 201531939A ES 201531939 A ES201531939 A ES 201531939A ES 2622461 R1 ES2622461 R1 ES 2622461R1
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ES
Spain
Prior art keywords
reactive sputtering
substrates
flush
respect
thin layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES201531939A
Other languages
Spanish (es)
Other versions
ES2622461B1 (en
ES2622461A2 (en
Inventor
Rafael ÁLVAREZ MOLINA
Victor Joaquin RICO GAVIRA
Maria Del Carmen LOPEZ SANTOS
Agustín Rodriguez González-Elipe
Alberto PALMERO ACEBEDO
Mercedes ALCON-CAMAS
María Elena GUILLÉN RODRÍGUEZ
Ramon ESCOBAR GALINDO
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Abengoa Research SL
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Abengoa Research SL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Abengoa Research SL filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES201531939A priority Critical patent/ES2622461B1/en
Publication of ES2622461A2 publication Critical patent/ES2622461A2/en
Publication of ES2622461R1 publication Critical patent/ES2622461R1/en
Application granted granted Critical
Publication of ES2622461B1 publication Critical patent/ES2622461B1/en
Withdrawn - After Issue legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Procedimiento de deposición de capas delgadas de estequiometría controlada sobre sustratos mediante pulverización catódica reactiva a ángulo rasante.#El objeto de la invención se refiere a un procedimiento para la deposición de capas finas sobre un sustrato, basada en la técnica de pulverización catódica reactiva, con el objetivo de controlar la composición química del material depositado y, en paralelo, aumentar la tasa de deposición respecto a la que se obtendría mediante este procedimiento en su modo convencional de uso.#Se consigue evitar el envenenamiento del cátodo mediante la determinación del valor crítico de flujo de gas reactivo en el reactor a partir del cual se produce dicho fenómeno y disponiendo el sustrato en una configuración geométrica respecto del cátodo de forma que las especies pulverizadas de este lleguen a la superficie del sustrato según un ángulo rasante promedio, medido respecto de esta, con valores comprendidos entre 0º y 85º.Method of deposition of thin layers of controlled stoichiometry on substrates by reactive sputtering sputtering. # The object of the invention relates to a procedure for the deposition of thin layers on a substrate, based on the technique of reactive sputtering, with The objective is to control the chemical composition of the deposited material and, in parallel, to increase the deposition rate with respect to what would be obtained by this procedure in its conventional mode of use. # It is possible to avoid cathode poisoning by determining the critical value of reactive gas flow in the reactor from which said phenomenon occurs and arranging the substrate in a geometric configuration with respect to the cathode so that the pulverized species thereof reach the surface of the substrate according to an average flush angle, measured with respect to this, with values between 0º and 85º.

ES201531939A 2015-12-30 2015-12-30 Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering Withdrawn - After Issue ES2622461B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES201531939A ES2622461B1 (en) 2015-12-30 2015-12-30 Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201531939A ES2622461B1 (en) 2015-12-30 2015-12-30 Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering

Publications (3)

Publication Number Publication Date
ES2622461A2 ES2622461A2 (en) 2017-07-06
ES2622461R1 true ES2622461R1 (en) 2017-07-14
ES2622461B1 ES2622461B1 (en) 2018-04-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
ES201531939A Withdrawn - After Issue ES2622461B1 (en) 2015-12-30 2015-12-30 Thin layer deposition procedure of controlled stoichiometry on substrates by flush-angle reactive sputtering

Country Status (1)

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ES (1) ES2622461B1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014149919A1 (en) * 2013-03-14 2014-09-25 Cardinal Cg Company Plasma emission monitor and process gas delivery system
EP2913422A1 (en) * 2012-10-23 2015-09-02 Shincron Co., Ltd. Thin film formation apparatus, sputtering cathode, and method of forming thin film
WO2015163875A1 (en) * 2014-04-24 2015-10-29 Halliburton Energy Services, Inc. Engineering the optical properties of an integrated computational element by ion implantation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913422A1 (en) * 2012-10-23 2015-09-02 Shincron Co., Ltd. Thin film formation apparatus, sputtering cathode, and method of forming thin film
WO2014149919A1 (en) * 2013-03-14 2014-09-25 Cardinal Cg Company Plasma emission monitor and process gas delivery system
WO2015163875A1 (en) * 2014-04-24 2015-10-29 Halliburton Energy Services, Inc. Engineering the optical properties of an integrated computational element by ion implantation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Garcia-Garcia Francisco J et al. POROUS, ROBUST HIGHLY CONDUCTING NI-YSZ THIN FILM ANODES PREPARED BY MAGNETRON SPUTTERING AT OBLIQUE ANGLES FOR APPLICATION AS ANODES AND BUFFER LAYERS IN SOLID OXIDE FUEL CELLS. International Journal of Hydrogen Energy, 04/05/2015, Vol. 40, Páginas 7382 - 7387 ISSN 0360-3199, (DOI: doi:10.1016/j.ijhydene.2015.04.001) <p>apartado: "Thin film preparation".</p> *
Safeen K et al. LOW TEMPERATURE GROWTH STUDY OF NANO-CRYSTALLINE TIOTHIN FILMS DEPOSITED BY RF SPUTTERING. J.Phys.D:Appl.Phys., 25/06/2015, Vol. 48, Páginas 295201 ISSN 0022-3727, (DOI: doi:10.1088/0022-3727/48/29/295201) apartado: "Experimental details". *
You et al. INFLUENCE OF INCIDENCE ANGLE AND DISTANCE ON THE STRUCTURE OF ALUMINIUM NITRIDE FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING. Thin Solid Films, 18/01/2007, Vol. 515, Páginas 2860 - 2863 ISSN 0040-6090, (DOI: doi:10.1016/j.tsf.2006.08.014) <p>apartado: "Experimental details".</p> *

Also Published As

Publication number Publication date
ES2622461B1 (en) 2018-04-24
ES2622461A2 (en) 2017-07-06

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