ES2593656R1 - Nanoestructura de láminas concéntricas - Google Patents
Nanoestructura de láminas concéntricas Download PDFInfo
- Publication number
- ES2593656R1 ES2593656R1 ES201530798A ES201530798A ES2593656R1 ES 2593656 R1 ES2593656 R1 ES 2593656R1 ES 201530798 A ES201530798 A ES 201530798A ES 201530798 A ES201530798 A ES 201530798A ES 2593656 R1 ES2593656 R1 ES 2593656R1
- Authority
- ES
- Spain
- Prior art keywords
- germanium
- silicon
- nanostructure
- intrinsic
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000002086 nanomaterial Substances 0.000 abstract 3
- 229910000927 Ge alloy Inorganic materials 0.000 abstract 2
- 229910000676 Si alloy Inorganic materials 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 abstract 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/387—Tin or alloys based on tin
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Laminated Bodies (AREA)
Abstract
Nanoestructura de láminas concéntricas.#La presente invención se refiere a una nanoestructura caracterizada porque está compuesta por una o múltiples láminas concéntricas alrededor de un núcleo de carbono o vacío, comprendiendo dicha al menos una o múltiples láminas concéntricas al menos uno entre los siguientes componentes en forma cristalina o policristalina: silicio intrínseco, germanio intrínseco, silicio dopado p o n, germanio dopado p o n, aleaciones de silicio y germanio intrínsecos, aleaciones de silicio y germanio dopados p o n, óxido de silicio, óxido de germanio, nitruro de silicio y nitruro de germanio, o una combinación de los mismos. Así mismo, la presente invención también se refiere a la fabricación y a los usos de dicha nanoestructura.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES201530798A ES2593656B1 (es) | 2015-06-08 | 2015-06-08 | Nanoestructura de láminas concéntricas |
EP16744433.0A EP3306685B1 (en) | 2015-06-08 | 2016-06-06 | Nanostructures of concentric layers |
ES16744433T ES2857740T3 (es) | 2015-06-08 | 2016-06-06 | Nanoestructuras de láminas concéntricas |
PCT/ES2016/070421 WO2016198712A1 (es) | 2015-06-08 | 2016-06-06 | Nanoestructura de láminas concéntricas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES201530798A ES2593656B1 (es) | 2015-06-08 | 2015-06-08 | Nanoestructura de láminas concéntricas |
Publications (3)
Publication Number | Publication Date |
---|---|
ES2593656A2 ES2593656A2 (es) | 2016-12-12 |
ES2593656R1 true ES2593656R1 (es) | 2016-12-14 |
ES2593656B1 ES2593656B1 (es) | 2017-07-11 |
Family
ID=56550902
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES201530798A Expired - Fee Related ES2593656B1 (es) | 2015-06-08 | 2015-06-08 | Nanoestructura de láminas concéntricas |
ES16744433T Active ES2857740T3 (es) | 2015-06-08 | 2016-06-06 | Nanoestructuras de láminas concéntricas |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES16744433T Active ES2857740T3 (es) | 2015-06-08 | 2016-06-06 | Nanoestructuras de láminas concéntricas |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3306685B1 (es) |
ES (2) | ES2593656B1 (es) |
WO (1) | WO2016198712A1 (es) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110277526B (zh) * | 2019-06-26 | 2022-03-15 | 河南固锂电技术有限公司 | 提升锂电池负极循环性能的复合层状材料及5号可充电锂电池 |
CN112242513A (zh) * | 2020-10-19 | 2021-01-19 | 天津工业大学 | 一种管-线式结构硅碳负极材料及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070077680A1 (en) * | 2004-05-11 | 2007-04-05 | Yuanhong Tang | Preparation of self-assembled silicon nanotubes by hydrothermal method |
WO2010052704A2 (en) * | 2008-11-04 | 2010-05-14 | Ramot At Tel Aviv University Ltd. | Tubular nanostructures, processes of preparing same and devices made therefrom |
WO2010138617A2 (en) * | 2009-05-27 | 2010-12-02 | Amprius Inc. | Core-shell high capacity nanowires for battery electrodes |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1049981C (zh) * | 1993-11-09 | 2000-03-01 | 北京玻璃研究所 | 二氧化锗空心光纤 |
US7465871B2 (en) * | 2004-10-29 | 2008-12-16 | Massachusetts Institute Of Technology | Nanocomposites with high thermoelectric figures of merit |
US9452446B2 (en) * | 2008-04-01 | 2016-09-27 | The Governors Of The University Of Alberta | Method for depositing silicon nanocrystals in hollow fibers |
WO2015023760A1 (en) * | 2013-08-14 | 2015-02-19 | Board Of Regents, The University Of Texas System | Methods of fabricating silicon nanowires and devices containing silicon nanowires |
-
2015
- 2015-06-08 ES ES201530798A patent/ES2593656B1/es not_active Expired - Fee Related
-
2016
- 2016-06-06 WO PCT/ES2016/070421 patent/WO2016198712A1/es active Application Filing
- 2016-06-06 EP EP16744433.0A patent/EP3306685B1/en active Active
- 2016-06-06 ES ES16744433T patent/ES2857740T3/es active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070077680A1 (en) * | 2004-05-11 | 2007-04-05 | Yuanhong Tang | Preparation of self-assembled silicon nanotubes by hydrothermal method |
WO2010052704A2 (en) * | 2008-11-04 | 2010-05-14 | Ramot At Tel Aviv University Ltd. | Tubular nanostructures, processes of preparing same and devices made therefrom |
WO2010138617A2 (en) * | 2009-05-27 | 2010-12-02 | Amprius Inc. | Core-shell high capacity nanowires for battery electrodes |
Non-Patent Citations (4)
Title |
---|
CASTRUCCI P et al. Si nanotubes and nanospheres with two-dimensional polycrystalline walls.Nanoscale 20120821 Royal Society of Chemistry gbr 21/08/2012 VOL: 4 No: 16 Pags: 5195 - 5201 ISSN 2040-3364 (print) ISSN 2040-3372 (electronic) Doi: doi:10.1039/c2nr30910f * |
TAGHINEJAD M et al. A nickel-gold bilayer catalyst engineering technique for self-assembled growth of highly ordered silicon nanotubes (SiNT).Nano Letters 20130313 American Chemical Society usa 13/03/2013 VOL: 13 No: 3 Pags: 889 - 897 ISSN 1530-6984 (print) ISSN 1530-6992 (electronic) Doi: doi:10.1021/nl303558f * |
WANG J-X et al. Facile synthesis of hollow silica nanotubes and their application as supports for immobilization of silver nanoparticles.Scripta Materialia November 2004 Elsevier Ltd gb 00/11/2004 VOL: 51 No: 11 Pags: 1035 - 1039 ISSN 1359-6462 (print) Doi: doi:10.1016/j.scriptamat.2004.08.016 * |
WINGERT M C et al. Sub-amorphous Thermal Conductivity in Ultrathin Crystalline Silicon Nanotubes.Nano Letters 20150408 American Chemical Society usa 08/04/2015 VOL: 15 No: 4 Pags: 2605 - 2611 ISSN 1530-6984 (print) ISSN 1530-6992 (electronic) Doi: doi:10.1021/acs.nanolett.5b00167 * |
Also Published As
Publication number | Publication date |
---|---|
ES2857740T3 (es) | 2021-09-29 |
WO2016198712A1 (es) | 2016-12-15 |
EP3306685A1 (en) | 2018-04-11 |
ES2593656A2 (es) | 2016-12-12 |
EP3306685B1 (en) | 2020-08-19 |
ES2593656B1 (es) | 2017-07-11 |
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