ES2593656A2 - Nanoestructura de láminas concéntricas - Google Patents

Nanoestructura de láminas concéntricas Download PDF

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Publication number
ES2593656A2
ES2593656A2 ES201530798A ES201530798A ES2593656A2 ES 2593656 A2 ES2593656 A2 ES 2593656A2 ES 201530798 A ES201530798 A ES 201530798A ES 201530798 A ES201530798 A ES 201530798A ES 2593656 A2 ES2593656 A2 ES 2593656A2
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Prior art keywords
germanium
silicon
intrinsic
nanostructure
doped
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES201530798A
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English (en)
Other versions
ES2593656R1 (es
ES2593656B1 (es
Inventor
Alejandro MORATA GARCÍA
Alberto TARANCÓN RUBIO
Gerard GADEA DÍEZ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fundacio Institut de Recerca en Energia de Catalunya
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Fundacio Institut de Recerca en Energia de Catalunya
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Application filed by Fundacio Institut de Recerca en Energia de Catalunya filed Critical Fundacio Institut de Recerca en Energia de Catalunya
Priority to ES201530798A priority Critical patent/ES2593656B1/es
Priority to ES16744433T priority patent/ES2857740T3/es
Priority to PCT/ES2016/070421 priority patent/WO2016198712A1/es
Priority to EP16744433.0A priority patent/EP3306685B1/en
Publication of ES2593656A2 publication Critical patent/ES2593656A2/es
Publication of ES2593656R1 publication Critical patent/ES2593656R1/es
Application granted granted Critical
Publication of ES2593656B1 publication Critical patent/ES2593656B1/es
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/387—Tin or alloys based on tin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)

Abstract

Nanoestructura de láminas concéntricas.#La presente invención se refiere a una nanoestructura caracterizada porque está compuesta por una o múltiples láminas concéntricas alrededor de un núcleo de carbono o vacío, comprendiendo dicha al menos una o múltiples láminas concéntricas al menos uno entre los siguientes componentes en forma cristalina o policristalina: silicio intrínseco, germanio intrínseco, silicio dopado p o n, germanio dopado p o n, aleaciones de silicio y germanio intrínsecos, aleaciones de silicio y germanio dopados p o n, óxido de silicio, óxido de germanio, nitruro de silicio y nitruro de germanio, o una combinación de los mismos. Así mismo, la presente invención también se refiere a la fabricación y a los usos de dicha nanoestructura.

Description

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Claims (1)

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ES201530798A 2015-06-08 2015-06-08 Nanoestructura de láminas concéntricas Expired - Fee Related ES2593656B1 (es)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ES201530798A ES2593656B1 (es) 2015-06-08 2015-06-08 Nanoestructura de láminas concéntricas
ES16744433T ES2857740T3 (es) 2015-06-08 2016-06-06 Nanoestructuras de láminas concéntricas
PCT/ES2016/070421 WO2016198712A1 (es) 2015-06-08 2016-06-06 Nanoestructura de láminas concéntricas
EP16744433.0A EP3306685B1 (en) 2015-06-08 2016-06-06 Nanostructures of concentric layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201530798A ES2593656B1 (es) 2015-06-08 2015-06-08 Nanoestructura de láminas concéntricas

Publications (3)

Publication Number Publication Date
ES2593656A2 true ES2593656A2 (es) 2016-12-12
ES2593656R1 ES2593656R1 (es) 2016-12-14
ES2593656B1 ES2593656B1 (es) 2017-07-11

Family

ID=56550902

Family Applications (2)

Application Number Title Priority Date Filing Date
ES201530798A Expired - Fee Related ES2593656B1 (es) 2015-06-08 2015-06-08 Nanoestructura de láminas concéntricas
ES16744433T Active ES2857740T3 (es) 2015-06-08 2016-06-06 Nanoestructuras de láminas concéntricas

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES16744433T Active ES2857740T3 (es) 2015-06-08 2016-06-06 Nanoestructuras de láminas concéntricas

Country Status (3)

Country Link
EP (1) EP3306685B1 (es)
ES (2) ES2593656B1 (es)
WO (1) WO2016198712A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110277526B (zh) * 2019-06-26 2022-03-15 河南固锂电技术有限公司 提升锂电池负极循环性能的复合层状材料及5号可充电锂电池
CN112242513A (zh) * 2020-10-19 2021-01-19 天津工业大学 一种管-线式结构硅碳负极材料及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1049981C (zh) * 1993-11-09 2000-03-01 北京玻璃研究所 二氧化锗空心光纤
CN1268543C (zh) * 2004-05-11 2006-08-09 湖南大学 水热法制备自组生长的硅纳米管及硅纳米线的方法
US7465871B2 (en) * 2004-10-29 2008-12-16 Massachusetts Institute Of Technology Nanocomposites with high thermoelectric figures of merit
US9452446B2 (en) * 2008-04-01 2016-09-27 The Governors Of The University Of Alberta Method for depositing silicon nanocrystals in hollow fibers
EP2364382A2 (en) * 2008-11-04 2011-09-14 Ramot at Tel-Aviv University Ltd. Tubular nanostructures, processes of preparing same and devices made therefrom
US20140370380A9 (en) * 2009-05-07 2014-12-18 Yi Cui Core-shell high capacity nanowires for battery electrodes
CN105580170A (zh) * 2013-08-14 2016-05-11 得克萨斯州大学系统董事会 制造硅纳米线的方法和包含硅纳米线的器件

Also Published As

Publication number Publication date
EP3306685B1 (en) 2020-08-19
ES2593656R1 (es) 2016-12-14
WO2016198712A1 (es) 2016-12-15
ES2857740T3 (es) 2021-09-29
ES2593656B1 (es) 2017-07-11
EP3306685A1 (en) 2018-04-11

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