ES2546917B2 - Silicon device for the detection of visible and infrared radiation at room temperature - Google Patents
Silicon device for the detection of visible and infrared radiation at room temperature Download PDFInfo
- Publication number
- ES2546917B2 ES2546917B2 ES201400241A ES201400241A ES2546917B2 ES 2546917 B2 ES2546917 B2 ES 2546917B2 ES 201400241 A ES201400241 A ES 201400241A ES 201400241 A ES201400241 A ES 201400241A ES 2546917 B2 ES2546917 B2 ES 2546917B2
- Authority
- ES
- Spain
- Prior art keywords
- room temperature
- infrared radiation
- visible
- detection
- silicon device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 230000005855 radiation Effects 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- -1 (1) and (2) Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Dispositivo de silicio para la detección de radiación visible e infrarroja a temperatura ambiente. La presente invención se refiere a un dispositivo con tres capas: dos semiconductores, (1) y (2), y una capa intermedia (3) aislante que están basadas en silicio cristalino. La implantación de impurezas con una concentración que supera la solubilidad sólida de dicha impureza en silicio confiere al dispositivo la capacidad de detectar radiación infrarroja a temperatura ambiente. La invención también se refiere al método para fabricar el dispositivo de la invención, que incluye técnicas de fabricación fuera del equilibrio termodinámico.Silicon device for the detection of visible and infrared radiation at room temperature. The present invention relates to a device with three layers: two semiconductors, (1) and (2), and an intermediate insulating layer (3) that are based on crystalline silicon. Implantation of impurities with a concentration that exceeds the solid solubility of said impurity in silicon gives the device the ability to detect infrared radiation at room temperature. The invention also relates to the method of manufacturing the device of the invention, which includes manufacturing techniques outside the thermodynamic equilibrium.
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES201400241A ES2546917B2 (en) | 2014-03-27 | 2014-03-27 | Silicon device for the detection of visible and infrared radiation at room temperature |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES201400241A ES2546917B2 (en) | 2014-03-27 | 2014-03-27 | Silicon device for the detection of visible and infrared radiation at room temperature |
Publications (2)
Publication Number | Publication Date |
---|---|
ES2546917A1 ES2546917A1 (en) | 2015-09-29 |
ES2546917B2 true ES2546917B2 (en) | 2016-02-08 |
Family
ID=54153582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES201400241A Active ES2546917B2 (en) | 2014-03-27 | 2014-03-27 | Silicon device for the detection of visible and infrared radiation at room temperature |
Country Status (1)
Country | Link |
---|---|
ES (1) | ES2546917B2 (en) |
-
2014
- 2014-03-27 ES ES201400241A patent/ES2546917B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
ES2546917A1 (en) | 2015-09-29 |
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