ES2518040A1 - Low resistance macroporous silicon condenser series (Machine-translation by Google Translate, not legally binding) - Google Patents

Low resistance macroporous silicon condenser series (Machine-translation by Google Translate, not legally binding) Download PDF

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Publication number
ES2518040A1
ES2518040A1 ES201330643A ES201330643A ES2518040A1 ES 2518040 A1 ES2518040 A1 ES 2518040A1 ES 201330643 A ES201330643 A ES 201330643A ES 201330643 A ES201330643 A ES 201330643A ES 2518040 A1 ES2518040 A1 ES 2518040A1
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translation
machine
low resistance
legally binding
google translate
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ES201330643A
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Spanish (es)
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ES2518040B1 (en
Inventor
Ángel RODRÍGUEZ MARTÍNEZ
Didac VEGA BRU
Jordi REINA MARSINYACH
Ramón PAVÓN URBANO
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Universitat Politecnica de Catalunya UPC
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Universitat Politecnica de Catalunya UPC
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Priority to ES201330643A priority Critical patent/ES2518040B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Silicon Compounds (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Secondary Cells (AREA)

Abstract

The present application for patent of invention consists, as indicated in its statement, in a "condenser of macroporous silicon of low resistance series", whose new characteristics of construction, conformation and design give it a high capacity/surface ratio of the sample while improving the frequency response with respect to previous devices. (Machine-translation by Google Translate, not legally binding)

Description

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Claims (1)

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ES201330643A 2013-05-03 2013-05-03 Low resistance macroporous silicon condenser series Active ES2518040B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES201330643A ES2518040B1 (en) 2013-05-03 2013-05-03 Low resistance macroporous silicon condenser series

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201330643A ES2518040B1 (en) 2013-05-03 2013-05-03 Low resistance macroporous silicon condenser series

Publications (2)

Publication Number Publication Date
ES2518040A1 true ES2518040A1 (en) 2014-11-04
ES2518040B1 ES2518040B1 (en) 2015-08-12

Family

ID=51830038

Family Applications (1)

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ES201330643A Active ES2518040B1 (en) 2013-05-03 2013-05-03 Low resistance macroporous silicon condenser series

Country Status (1)

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ES (1) ES2518040B1 (en)

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
D. HERNÁNDEZ, D. LANGE, T. TRIFONOV, M. GARÍN, M. GARCÍA, A. RODRÍGUEZ, R. ALCUBILLA, ¿3D Metallo-dielectric Structures combining Electrochemical and Electroplating techniques¿, Microelectronic Engineering, Mayo-Agosto 2010, Volumen 87, números 5-8, Páginas 1458-1462 *
F. ROOZEBOOM, R. ELFRINK, G.S.M. RIJKS, J.F. VERHOEVEN, A. KEMMEREN, J.VAN DEN MERAKKER, ¿Hingh Density, Low-Loss MOS Capacitors for Integrated RF Decoupling¿, The International Journal of Microcircuits and Electronic Packaging, Octubre 2001, Volumen 24, Nº 3, Tercer Cuarto *
F. ROOZEBOOM, R. ELFRINK, J.VAN DEN MERAKKER AND F. HOLTHUYSEN, ¿High-Value MOS Capacitor arrays in Ultradeep Trenches in Silicon¿, Microelectronic Engeenering, Junio 2000, Volumen 53, Nºs 1-4, Páginas 581-584 *
J.H. KLOOTWIJK, JINESH W. DEKKERS, J.F. VERHOEVEN, F.C. VAN DE HEUVEL, H.D. KIM, D. BLIN, M.A. VERHEIJEN, R.G.R. WEEMAES, M. KAISER, J.J. RUIGROK, AND F. ROOZEBOOM, ¿Ultrahigh Capacitance Density for multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon¿, IEEE Electron Device Letters, Julio 2008, Volumen 29, Nº 7, Páginas 740-742 *
MARIANNA KEMELL, MIKKO RITALA, MARKKU LESKELA, EMMANUEL OSSEI-WUSU, JURGEN CARSTENSEN, HELMUT FOLL, ¿Si/Al2O3/Zno: AL Capacitor arrays formed in Electrochemically etched porous Si by Atomic Layer Deposition¿, Microelectronic Engeenering, Noviembre 2006, Volumen 84, Páginas 313-318 *
PARAG BANERJEE, ISRAEL PEREZ, LAURENT HENN-LECORDIER, SANG BOK LEE, AND GARY W. RUBLOFF, ¿Nanotubular Metal-insulator-metal Capacitor arrays for energy storage¿, Nature Nanotechnology, 15 Marzo de 2009, Letters, DOI: 10.1038/Nnano.2009.37 *
V. LEHMANN, W. HONLEIN, H. REISINGER, A. SPITZER, H. WENDT, J. WILLER, ¿A Novel Capacitor technology based on Porous Silicon¿, Thin Solid Films, 1996, Volumen 276, Páginas 138-142 *

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ES2518040B1 (en) 2015-08-12

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