ES2486865B1 - Opto-spintronic device and method for its manufacture - Google Patents

Opto-spintronic device and method for its manufacture Download PDF

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Publication number
ES2486865B1
ES2486865B1 ES201300083A ES201300083A ES2486865B1 ES 2486865 B1 ES2486865 B1 ES 2486865B1 ES 201300083 A ES201300083 A ES 201300083A ES 201300083 A ES201300083 A ES 201300083A ES 2486865 B1 ES2486865 B1 ES 2486865B1
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ES
Spain
Prior art keywords
layer
manufacture
disposed
semiconductor material
organic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES201300083A
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Spanish (es)
Other versions
ES2486865A1 (en
Inventor
Eugenio Coronado Miralles
Helena PRIMA GARCÍA
Juan Pablo PRIETO RUIZ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitat de Valencia
Original Assignee
Universitat de Valencia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitat de Valencia filed Critical Universitat de Valencia
Priority to ES201300083A priority Critical patent/ES2486865B1/en
Priority to PCT/ES2014/000005 priority patent/WO2014111607A1/en
Publication of ES2486865A1 publication Critical patent/ES2486865A1/en
Application granted granted Critical
Publication of ES2486865B1 publication Critical patent/ES2486865B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Developing Agents For Electrophotography (AREA)

Abstract

Dispositivo opto-espintrónico y método para su fabricación.#El dispositivo comprende:#- un sustrato transparente (S);#- un primer (E1) y un segundo (E2) electrodos con propiedades ferromagnéticas;#- una capa de material semiconductor orgánico electroluminiscente (SO), dispuesta entre los electrodos (E1, E2);#- una primera capa de barrera (B1), dispuesta entre dicho primer electrodo (E1) y una cara de dicha capa de material semiconductor orgánico electroluminiscente (SO);y#- una segunda capa de barrera (B2), dispuesta entre dicho segundo electrodo (E2) y otra cara de dicha capa de material semiconductor orgánico electroluminiscente (SO);#estando dichas capas de barrera (B1, B2) compuestas, dimensionadas, dispuestas y configuradas para#- favorecer la inyección de carga polarizada en espín tanto de electrones, como de huecos; y#- favorecer la inyección de carga tanto de electrones como de huecos, y con ello la recombinación de pares electrón-hueco y la consiguiente generación de luz.#El método está adaptado para fabricar el dispositivo de la invención.Opto-spintronic device and method for its manufacture # The device comprises: # - a transparent substrate (S); # - a first (E1) and a second (E2) electrodes with ferromagnetic properties; # - a layer of organic semiconductor material electroluminescent (SO), disposed between the electrodes (E1, E2); # - a first barrier layer (B1), disposed between said first electrode (E1) and a face of said layer of electroluminescent organic semiconductor material (SO); and # - a second barrier layer (B2), disposed between said second electrode (E2) and another face of said electroluminescent organic semiconductor material (SO) layer; # said barrier layers (B1, B2) being composed, sized, arranged and configured to # - favor the injection of polarized spin charge of both electrons and holes; and # - favor the injection of charge of both electrons and holes, and thereby the recombination of electron-hole pairs and the consequent generation of light. # The method is adapted to manufacture the device of the invention.

Description

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Claims (1)

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ES201300083A 2013-01-18 2013-01-18 Opto-spintronic device and method for its manufacture Active ES2486865B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ES201300083A ES2486865B1 (en) 2013-01-18 2013-01-18 Opto-spintronic device and method for its manufacture
PCT/ES2014/000005 WO2014111607A1 (en) 2013-01-18 2014-01-16 Opto-spintronic device and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201300083A ES2486865B1 (en) 2013-01-18 2013-01-18 Opto-spintronic device and method for its manufacture

Publications (2)

Publication Number Publication Date
ES2486865A1 ES2486865A1 (en) 2014-08-19
ES2486865B1 true ES2486865B1 (en) 2015-05-27

Family

ID=51209052

Family Applications (1)

Application Number Title Priority Date Filing Date
ES201300083A Active ES2486865B1 (en) 2013-01-18 2013-01-18 Opto-spintronic device and method for its manufacture

Country Status (2)

Country Link
ES (1) ES2486865B1 (en)
WO (1) WO2014111607A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008073760A1 (en) * 2006-12-14 2008-06-19 Massachusetts Institute Of Technology Organic spin transport device

Also Published As

Publication number Publication date
WO2014111607A1 (en) 2014-07-24
ES2486865A1 (en) 2014-08-19

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