ES2466515A1 - Fine-layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing process (Machine-translation by Google Translate, not legally binding) - Google Patents
Fine-layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing process (Machine-translation by Google Translate, not legally binding) Download PDFInfo
- Publication number
- ES2466515A1 ES2466515A1 ES201331617A ES201331617A ES2466515A1 ES 2466515 A1 ES2466515 A1 ES 2466515A1 ES 201331617 A ES201331617 A ES 201331617A ES 201331617 A ES201331617 A ES 201331617A ES 2466515 A1 ES2466515 A1 ES 2466515A1
- Authority
- ES
- Spain
- Prior art keywords
- semiconductor material
- photoactive semiconductor
- nanostructures
- conductive material
- photoactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000004020 conductor Substances 0.000 claims abstract description 53
- 239000002086 nanomaterial Substances 0.000 claims abstract description 48
- 238000004556 laser interferometry Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002679 ablation Methods 0.000 claims abstract description 15
- 238000001459 lithography Methods 0.000 claims abstract description 11
- 230000000737 periodic effect Effects 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 28
- 230000000694 effects Effects 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 230000000295 complement effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
Dispositivo fotovoltaico de capa fina con estructura de cristal fotónico y comportamiento como sistema de confinamiento cuántico, y su procedimiento de fabricación. Thin layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing procedure.
La presente invención se encuadra dentro del sector de la nanotecnología. Concretamente, se refiere a su aplicación para la configuración de dispositivos fotovoltaicos combinando las The present invention falls within the nanotechnology sector. Specifically, it refers to its application for the configuration of photovoltaic devices combining the
10 características de los sistemas de confinamiento cuántico y estructuras de cristal fotónico para así mejorar el atrapamiento de la luz y su eficiencia cuántica, y a su procedimiento fabricación. 10 characteristics of quantum confinement systems and photonic crystal structures to improve light entrapment and quantum efficiency, and to its manufacturing process.
En particular, la presente invención se refiere a una célula solar de capa fina sobre la cual, In particular, the present invention relates to a thin-layer solar cell on which,
15 mediante la aplicación de nanoestructuras simétricas, se consigue efectos propios de cristales fotónicos y de sistemas de confinamiento cuántico. La nueva configuración presentada mejora la eficiencia de la célula sin incrementar mucho los costes de fabricación. 15 through the application of symmetric nanostructures, effects of photonic crystals and quantum confinement systems are achieved. The new configuration presented improves cell efficiency without greatly increasing manufacturing costs.
20 La obtención de energía eléctrica mediante la exposición de un semiconductor, o un conjunto de semiconductores, a la luz solar, se conoce como energía fotovoltaica. La generación de energía fotovoltaica está considerada desde sus orígenes como una fuente de energía limpia, duradera, de bajo impacto y que requiere poco mantenimiento. 20 Obtaining electrical energy by exposing a semiconductor, or a set of semiconductors, to sunlight, is known as photovoltaic energy. The generation of photovoltaic energy is considered from its origins as a source of clean, durable, low impact and low maintenance energy.
25 Los dispositivos que transforman energía solar en electricidad son comúnmente conocidos como células solares o fotovoltaicas y su funcionamiento está basado en las propiedades intrínsecas de los semiconductores que actúan como material fotoactivo. Los fotones incidentes con energía igual o mayor a la energía de activación, determinada por la banda 25 Devices that transform solar energy into electricity are commonly known as solar or photovoltaic cells and their operation is based on the intrinsic properties of semiconductors that act as photoactive material. The incident photons with energy equal to or greater than the activation energy, determined by the band
30 de energía prohibida del material semiconductor, transfieren su energía a los electrones de la capa de valencia, pudiendo estos promocionar a la banda de conducción, de forma que es posible la obtención de electricidad. 30 of prohibited energy of the semiconductor material, they transfer their energy to the electrons of the valence layer, these being able to promote the conduction band, so that it is possible to obtain electricity.
El Silicio es uno de los materiales semiconductores más empleados a la hora de fabricar Silicon is one of the most used semiconductor materials when manufacturing
35 células solares, usándose monocristales, formas policristalinas y silicio amorfo. En las llamadas células de Primera Generación, a medida que la tecnología iba madurando, los 35 solar cells, using monocrystals, polycrystalline forms and amorphous silicon. In the so-called First Generation cells, as technology matured, the
2 2
costes de material se volvían más dominantes. Tal y como se menciona en la patente US2007/0012355, estudios realizados en 1997 mostraban que los costes de material podían llegar a representar el 70% de los costes de fabricación. Esta situación alentó el desarrollo de una segunda generación de células fotovoltaicas, las células solares de lámina delgada. material costs became more dominant. As mentioned in US2007 / 0012355, studies carried out in 1997 showed that material costs could represent 70% of manufacturing costs. This situation encouraged the development of a second generation of photovoltaic cells, thin-leaf solar cells.
Las células solares de lámina delgada tienen un coste menor que las de silicio monocristalino, debido a que el proceso de crecido de silicio monocristalino en volumen es, aunque perfectamente conocido, costoso. Estas células de lámina delgada, están típicamente compuestas por un sustrato de vidrio, un electrodo transparente, una capa de material fotoactivo y un segundo electrodo. La considerable reducción de las capas de Silicio conlleva significativas ventajas más allá de los beneficios económicos. Entre dichas ventajas, cabe destacar la mejora de la eficiencia en la generación de pares electrón-hueco y la reducción de los efectos de degradación producidos por la radiación solar, propios de células anteriores como las de silicio amorfo. En contraposición, aparecen inconvenientes como consecuencia de la disminución del grosor de la célula, como la reducción de la absorción de la luz y, consecuentemente, la reducción de corriente generada. Es por eso que numerosas investigaciones en los últimos años se han centrado en la búsqueda de mecanismos de mejora de la absorción de este tipo de células, lo que ha impulsado el desarrollo de las células de tercera generación. The thin-leaf solar cells have a lower cost than those of monocrystalline silicon, because the process of monocrystalline silicon growth in volume is, although perfectly known, expensive. These thin-sheet cells are typically composed of a glass substrate, a transparent electrode, a layer of photoactive material and a second electrode. The considerable reduction of the layers of Silicon entails significant advantages beyond the economic benefits. Among these advantages, it is worth highlighting the improvement of the efficiency in the generation of electron-hollow pairs and the reduction of the effects of degradation produced by solar radiation, typical of previous cells such as amorphous silicon. In contrast, inconveniences appear as a consequence of the decrease in cell thickness, such as the reduction of light absorption and, consequently, the reduction of generated current. That is why numerous investigations in recent years have focused on the search for mechanisms to improve the absorption of this type of cells, which has driven the development of third generation cells.
Las células de tercera generación pretenden sobrepasar el límite Shockley–Queisser, el cual limita la conversión que puede alcanzarse al transformar energía solar a eléctrica en una célula fotovoltaica de Si al 31% (1 sol, masa del aire 1,5 distribución espectral) ( Shockley, W.; Queisser, H. J. J. Appl. Phys. 1961, 32, 510). Este límite teórico se calcula desde la asunción de ciertos supuestos y, por tanto, la obtención de eficiencias mayores a este límite pasa por quebrantar uno o varios de dichos supuestos. Third generation cells are intended to exceed the Shockley – Queisser limit, which limits the conversion that can be achieved by transforming solar energy into an photovoltaic cell of Si at 31% (1 sun, mass of air 1.5 spectral distribution) ( Shockley, W .; Queisser, HJJ Appl. Phys. 1961, 32, 510). This theoretical limit is calculated from the assumption of certain assumptions and, therefore, obtaining efficiencies greater than this limit goes through breaking one or more of these assumptions.
Uno de los supuestos que se admite en el cálculo del límite Shockley–Queisser es que el exceso de energía de los fotones incidentes, respecto a la energía de banda prohibida, no es útil para el mecanismo de promoción electrónica. Sin embargo, se ha demostrado que un solo fotón puede crear varios pares electrón hueco en nanopartículas semiconductoras. Este hallazgo se traduce en un aumento de la eficiencia, ya que permite modificar el mecanismo de absorción de tal forma que un fotón cree más de un excitón. Este efecto se ha corroborado experimentalmente en Sulfuro de Plomo (PbS) coloidal y en puntos cuánticos de Seleniuro de Plomo (PbSe), obteniéndose eficiencias del 48% (R.J.Ellingson, et al “Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots” Nano One of the assumptions that is allowed in the calculation of the Shockley – Queisser limit is that the excess energy of the incident photons, with respect to the prohibited band energy, is not useful for the electronic promotion mechanism. However, it has been shown that a single photon can create several hollow electron pairs in semiconductor nanoparticles. This finding translates into an increase in efficiency, since it allows the absorption mechanism to be modified so that a photon creates more than one exciton. This effect has been experimentally corroborated in Colloidal Lead Sulfide (PbS) and in quantum points of Lead Selenide (PbSe), obtaining efficiencies of 48% (RJEllingson, et al. “Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots "Nano
Letters, 5, 5 p. 865-871 (2005)). Desde entonces, varios fueron los investigadores que empezaron a aplicar este efecto a las células solares y esto se ve reflejado en algunas patentes (US20110139233 A1). Letters, 5, 5 p. 865-871 (2005)). Since then, several researchers began to apply this effect to solar cells and this is reflected in some patents (US20110139233 A1).
Con objeto de conocer la eficiencia máxima teórica de las nanoestructuras de Si, se han realizado cálculos teóricos, obteniendo unos máximos de 48% para luz concentrada y 37% para luz sin concentrar. Las eficiencias obtenidas varían en función del tamaño de los nanohilos (ver Figura 7). Además, en el estado actual de la técnica también se encuentran nanoestructuras alargadas que consiguen mejorar el rendimiento de las células de capa fina convencionales mediante el aumento de la recogida de carga debido a la proximidad, en escala nanométrica, de la película de separación de carga (US7893348 B2). Aunque son varios los inventos que usan nanohilos en las células solares dispuestos substancialmente verticales sobre el sustrato (US7893348 B2 o ES 2 340 645) no se encuentran ejemplos de nanohilos de materiale fotoactivo rigurosamente coaxiales y distribuidos de manera homogénea sobre la superficie del sustrato. In order to know the theoretical maximum efficiency of Si nanostructures, theoretical calculations have been made, obtaining a maximum of 48% for concentrated light and 37% for unconcentrated light. The efficiencies obtained vary depending on the size of the nanowires (see Figure 7). In addition, in the current state of the art there are also elongated nanostructures that improve the performance of conventional thin-layer cells by increasing the load collection due to the proximity, on a nanometric scale, of the load separation film (US7893348 B2). Although there are several inventions that use nanowires in solar cells arranged substantially vertically on the substrate (US7893348 B2 or ES 2 340 645) there are no examples of nanowires of photoactive material rigorously coaxial and evenly distributed on the substrate surface.
En lo que a la capa delantera se refiere, en contacto físico con el material fotoactivo, el uso de óxidos conductores transparentes TCO, (del inglés, Transparent Conducting Oxides), como el óxido de indio o el óxido de zinc, son comúnmente usados por presentar un buen ratio entre conductividad eléctrica y transparencia óptica en el visible. Dicho equilibrio no es sencillo de conseguir debido a que un aumento en la concentración de portadores para la mejora de la conductividad eléctrica, supone una reducción de la transparencia óptica en el visible. Se ha reportado la posibilidad de mejorar estas propiedades mediante el uso de nanopartículas y nanohilos (estos últimos con su eje dispuesto en la dirección de la intercara TCO-semiconductor) magnéticos, de manera que su densidad sea suficientemente baja para proporcionar una buena transparencia óptica a la vez que se optimiza la conductividad eléctrica (WO2011133435 A3). As far as the front layer is concerned, in physical contact with the photoactive material, the use of TCO transparent conductive oxides, (in English, Transparent Conducting Oxides), such as indium oxide or zinc oxide, are commonly used by present a good ratio between electrical conductivity and optical transparency in the visible. Said equilibrium is not easy to achieve because an increase in the concentration of carriers for the improvement of the electrical conductivity, supposes a reduction of the optical transparency in the visible one. The possibility of improving these properties has been reported through the use of nanoparticles and nanowires (the latter with their axis arranged in the direction of the magnetic TCO-semiconductor interface), so that their density is sufficiently low to provide good optical transparency to while the electrical conductivity is optimized (WO2011133435 A3).
Para aumentar la eficiencia de los dispositivos fotovoltaicos también es necesario incrementar la cantidad de luz que llega al interior del semiconductor fotoactivo, así como aumentar el tiempo de vida medio que los fotones permanecen en él. Una estrategia clásica, basada en la óptica geométrica, consiste en añadir una capa de material antirreflectante sobre el material fotoactivo en la superficie de incidencia fotónica y una capa reflectante a la salida del mismo. Otra posibilidad consiste en el uso de superficies texturizadas con nanoestructuras. Si el tamaño característico de las nanoestructuras es comparable a la longitud de onda incidente se mejora el atrapamiento de la luz. To increase the efficiency of photovoltaic devices, it is also necessary to increase the amount of light that reaches the interior of the photoactive semiconductor, as well as increase the average life time that photons remain in it. A classic strategy, based on geometric optics, is to add a layer of anti-reflective material on the photoactive material on the photonic incidence surface and a reflective layer at the exit thereof. Another possibility is the use of textured surfaces with nanostructures. If the characteristic size of the nanostructures is comparable to the incident wavelength, light entrapment is improved.
La propagación de los fotones a través del medio se ve afectada por la estructura del mismo, de forma que un mismo material puede interaccionar de forma diferente con la radiación solar según se encuentre en forma de medio homogéneo, periódicamente dispuesto o de forma desorganizada. Esta característica hace que materiales dieléctricos con una estructura periódica cuya distancia característica sea del mismo orden de magnitud que la longitud de onda de la radiación con la que se desean interactuar permitan fabricar materiales capaces de reflejar, confinar o guiar la luz. The propagation of the photons through the medium is affected by its structure, so that the same material can interact differently with solar radiation as it is in the form of a homogeneous medium, periodically arranged or in a disorganized manner. This characteristic means that dielectric materials with a periodic structure whose characteristic distance are of the same order of magnitude as the wavelength of the radiation with which they wish to interact, allow materials capable of reflecting, confining or guiding light.
Uno de los problemas de las soluciones basadas en la óptica geométrica (capa antirreflectante delantera y una capa reflectante trasera) es que parte de la radiación puede ser reflejada por la capa reflectante trasera retornando a través del material fotoactivo, pero saliendo sin generar electricidad. Por eso uno de los objetivos clave en los últimos años ha sido intentar aumentar el camino recorrido por la luz dentro del material fotoactivo. Algunos investigadores han intentado solventar esto mediante el uso de cristales fotónicos. One of the problems of solutions based on geometric optics (front antireflective layer and a rear reflective layer) is that part of the radiation can be reflected by the rear reflective layer returning through the photoactive material, but leaving without generating electricity. That is why one of the key objectives in recent years has been to try to increase the path traveled by light within the photoactive material. Some researchers have tried to solve this by using photonic crystals.
Un cristal fotónico es un material estructurado de forma que sus propiedades dieléctricas varían periódicamente en el espacio. Son nanoestructuras periódicas diseñadas para afectar el movimiento de los fotones de un modo similar al que la periodicidad de un cristal semiconductor afecta al movimiento de los electrones. En la patente US7482532 B2, un cristal fotónico es acoplado sobre la región fotoactiva. Dicho cristal fotónico consta de un reflector de Bragg distribuido (DBR, del inglés Distributed Bragg Reflector) para atrapar mejor la luz. Este es un ejemplo de uso de cristales fotónicos unidimensionles para mejorar el atrapamiento de la luz. A photonic crystal is a structured material so that its dielectric properties vary periodically in space. They are periodic nanostructures designed to affect the movement of photons in a manner similar to that the periodicity of a semiconductor crystal affects the movement of electrons. In US7482532 B2, a photonic crystal is coupled over the photoactive region. Said photonic crystal consists of a distributed Bragg reflector (DBR) to better capture the light. This is an example of using one-dimensional photonic crystals to improve light entrapment.
En la patente US20070235072 A1, ya se da a conocer el uso de cristales fotónicos para la mejora de la eficiencia en células solares. En este caso, una estructura de cristal fotónico es posicionada por debajo de la región del material fotovoltaico. Esta estructura puede estar compuesta por huecos de aire o de un material dieléctrico. La estructura de material fotónico proporciona un medio en el cual se producen una pluralidad de orientaciones espaciales de la luz incidente recibida en la célula solar permitiendo atrapar la luz de un rango selectivo de frecuencias. In the patent US20070235072 A1, the use of photonic crystals for the improvement of efficiency in solar cells is already disclosed. In this case, a photonic crystal structure is positioned below the region of the photovoltaic material. This structure can be composed of air gaps or a dielectric material. The structure of photonic material provides a means in which a plurality of spatial orientations of the incident light received in the solar cell are produced allowing the light to be trapped from a selective range of frequencies.
En el actual estado de la técnica se encuentran ejemplos de nanoestructuras en la superficie de células solares que obtienen mejores resultados de rendimiento que mediante el uso de capas antirreflectantes. Ejemplo de ello es la patente WO2009133225 A1, que modificando In the current state of the art there are examples of nanostructures on the surface of solar cells that obtain better performance results than through the use of anti-reflective layers. An example of this is patent WO2009133225 A1, which modifying
la topografía de una célula solar mediante la fabricación de una red ordenada de cavidades rellenas de aire, se observa que se genera una mayor cantidad de corriente eléctrica, a partir de una determinada luz incidente, que en una célula de iguales características pero sin dicha modificación superficial. Esta rugosidad creada permite tanto reducir la cantidad de luz reflejada por la superficie como incrementar el camino óptico total que recorre la luz dentro del material. the topography of a solar cell by means of the manufacture of an ordered network of cavities filled with air, it is observed that a greater amount of electric current is generated, from a certain incident light, than in a cell of the same characteristics but without such modification superficial. This roughness created allows both reducing the amount of light reflected by the surface and increasing the total optical path that the light travels within the material.
En la patente US20110155215 A1 aplican este tipo de materiales para mejorar la eficiencia en células solares. Un cristal fotónico bidimensional es colocado sobre la superficie del sustrato y de manera adyacente al material fotoactivo. Sin embargo, en la patente US20110247676 A1 dan un paso más allá y describen una estructura de cristal fotónico bidimensional en la cual se disponen de manera periódica hilos de material fotovoltaico (silicio dopado tipo p o n). Como se puede ver con los ejemplos anteriormente citados, otros autores han propuesto distintas geometrías basadas en la combinación de cristales fotónicos 1D (reflectores de Bragg) y 2D. Mediante nanoestructuras periódicas han aprovechado los efectos beneficiosos de los cristales fotónicos para el aumento de eficiencias en las células solares. Lo que no se aborda en todos estos inventos y en algunos artículos sobre la materia, es el hecho de que configurando debidamente estas nanoestructuras no sólo nos podemos beneficiar de las propiedades de los cristales fotónicos sino que también se puede incrementar la eficiencia de la célula consiguiendo que esta misma nanoestructura se comporte como un sistema de confinamiento cuántico. In the US20110155215 A1 patent apply such materials to improve efficiency in solar cells. A two-dimensional photonic crystal is placed on the surface of the substrate and adjacent to the photoactive material. However, in US20110247676 A1 they go a step further and describe a two-dimensional photonic crystal structure in which threads of photovoltaic material (doped silicon type p or n) are periodically arranged. As can be seen with the examples cited above, other authors have proposed different geometries based on the combination of 1D photonic crystals (Bragg reflectors) and 2D. Through periodic nanostructures they have taken advantage of the beneficial effects of photonic crystals to increase efficiencies in solar cells. What is not addressed in all these inventions and in some articles on the subject, is the fact that by properly configuring these nanostructures we can not only benefit from the properties of photonic crystals but also can increase the efficiency of the cell getting that this same nanostructure behaves like a quantum confinement system.
El presente invento aborda la problemática previamente explicada aplicando ingeniería de banda de energía prohibida mediante el empleo de nanoestructuras y fomentando el trapamiento de luz empleando cristales fotónicos. La innovación introducida en la presente invención radica en la combinación de ambos sistemas en una misma nanoestructura para la mejora de la eficiencia de transformación energética en dispositivos fotovoltaicos de lámina delgada. The present invention addresses the previously explained problem by applying forbidden energy band engineering through the use of nanostructures and promoting light trapping using photonic crystals. The innovation introduced in the present invention lies in the combination of both systems in the same nanostructure to improve the efficiency of energy transformation in thin-film photovoltaic devices.
La realización preferida del presente invento es una célula solar de capa fina con la cual, mediante la creación de cavidades nanométricas y periódicas, se consigue mejorar la eficiencia de la célula creando una estructura de cristal fotónico y consiguiendo un sistema de confinamiento cuántico. También se describe en la presente invención un procedimiento para fabricar las nanoestructuras de tamaño nanométrico y periódicamente distribuidas en dicha célula. The preferred embodiment of the present invention is a thin-layer solar cell with which, through the creation of nanometric and periodic cavities, the efficiency of the cell is improved by creating a photonic crystal structure and achieving a quantum confinement system. Also described in the present invention is a process for manufacturing nanostructures of nanometric size and periodically distributed in said cell.
Para una mayor comprensión de la invención presentada, se tomarán, junto con las explicaciones aquí recogidas, los dibujos incluidos al final del documento. For a better understanding of the invention presented, the drawings included at the end of the document will be taken, together with the explanations included here.
Los dibujos, que no están necesariamente a escala, tienen el propósito de representar una realización particular de la invención y debe entenderse que su propósito no es el de limitar la invención a las realizaciones y ejemplos concretos descritos. Otras de las figuras aquí recogidas no son resultado de la presente invención, sino un reflejo del estado del arte que nos ayudará a entender la mejora descrita en este documento. The drawings, which are not necessarily to scale, are intended to represent a particular embodiment of the invention and it should be understood that its purpose is not to limit the invention to the specific embodiments and examples described. Other figures contained herein are not the result of the present invention, but a reflection of the state of the art that will help us understand the improvement described in this document.
Fig. 1: Esquema en perspectiva de un corte de uno de los posibles dispositivos fotovoltaicos basados en la presente invención, en el que las nanoestructuras están realizadas en la superficie de material conductor transparente (03) situada en la interfaz con el material semiconductor fotoactivo (02). La incidencia de la luz tiene lugar desde la parte inferior de la figura. Este dispositivo comprende: un sustrato transparente (04), un electrodo anterior compuesto por material conductor transparente (03), una o varias capas de material semiconductor fotoactivo (02) y un electrodo posterior compuesto por una o varias capas de material conductor (01). Fig. 1: Perspective diagram of a cut of one of the possible photovoltaic devices based on the present invention, in which the nanostructures are made on the surface of transparent conductive material (03) located at the interface with the photoactive semiconductor material ( 02). The incidence of light takes place from the bottom of the figure. This device comprises: a transparent substrate (04), a front electrode composed of transparent conductive material (03), one or several layers of photoactive semiconductor material (02) and a rear electrode composed of one or several layers of conductive material (01) .
Fig. 2: Esquema explosionado de las distintas capas que forman uno de los posibles dispositivos fotovoltaicos basados en la presente invención, en el cual se puede apreciar la periodicidad de las cavidades realizadas en la interfaz situada entre la superficie de material conductor transparente (03) y el material semiconductor fotoactivo (02). Fig. 2: Exploded scheme of the different layers that form one of the possible photovoltaic devices based on the present invention, in which the periodicity of the cavities made in the interface located between the surface of transparent conductive material (03) can be appreciated and the photoactive semiconductor material (02).
Fig. 3: Esquema en perspectiva de un corte de uno de los posibles dispositivos fotovoltaicos basados en la presente invención, en el que las nanoestructuras están realizadas en dos superficies: en la superficie de material conductor transparente (03) situada en la interfaz con el material semiconductor fotoactivo (02), y en la superficie de material semiconductor fotoactivo (02) situada en la interfaz con el electrodo posterior compuesto por una o varias capas de material conductor (01). La incidencia de la luz tiene lugar desde la parte inferior de la figura. Este dispositivo comprende: un sustrato transparente (04), un electrodo anterior compuesto por material conductor transparente (03), una o varias capas de material semiconductor fotoactivo (02) y un electrodo posterior compuesto por una o varias capas de material conductor (01). Fig. 3: Perspective diagram of a cut of one of the possible photovoltaic devices based on the present invention, in which the nanostructures are made on two surfaces: on the surface of transparent conductive material (03) located at the interface with the photoactive semiconductor material (02), and on the surface of photoactive semiconductor material (02) located at the interface with the rear electrode consisting of one or more layers of conductive material (01). The incidence of light takes place from the bottom of the figure. This device comprises: a transparent substrate (04), a front electrode composed of transparent conductive material (03), one or several layers of photoactive semiconductor material (02) and a rear electrode composed of one or several layers of conductive material (01) .
Fig. 4: Esquema explosionado de las distintas capas que forman uno de los posibles dispositivos fotovoltaicos basados en la presente invención, en el cual se puede apreciar la periodicidad de las cavidades realizadas tanto en la interfaz situada entre la superficie de material conductor transparente (03) y el material semiconductor fotoactivo (02), como en la Fig. 4: Exploded scheme of the different layers that form one of the possible photovoltaic devices based on the present invention, in which the periodicity of the cavities made both at the interface located between the surface of transparent conductive material (03) ) and the photoactive semiconductor material (02), as in the
5 interfaz situada entre la superficie de material semiconductor fotoactivo (02) y el electrodo posterior compuesto por una o varias capas de material conductor (01). 5 interface located between the surface of photoactive semiconductor material (02) and the electrode posterior composed of one or several layers of conductive material (01).
10 La presente invención se encuadra dentro del sector de la nanotecnología. Concretamente, se refiere a la aplicación y definición de nanoestructuras que consigan mejorar el atrapamiento de la luz y la eficiencia cuántica en dispositivos fotovoltaicos de capa fina, y a su procedimiento de fabricación. The present invention falls within the nanotechnology sector. Specifically, it refers to the application and definition of nanostructures that improve the entrapment of light and quantum efficiency in thin-film photovoltaic devices, and their manufacturing process.
15 La presente invención se basa en el conocimiento vigente en el estado de la técnica, de que tanto el uso de cristales fotónicos como el de sistemas de confinamiento cuántico en dispositivos fotovoltaicos pueden mejorar el rendimiento de células solares de lámina delgada. La actividad inventiva de los autores de la presente patente reside en la novedad de aunar ambos sistemas en una misma estructura mediante el uso de nanoestructuras The present invention is based on the knowledge in force in the state of the art, that both the use of photonic crystals and that of quantum confinement systems in photovoltaic devices can improve the performance of thin-leaf solar cells. The inventive activity of the authors of this patent resides in the novelty of combining both systems in the same structure through the use of nanostructures
20 periódicas. Del mismo modo, se describirá el proceso de fabricación de dichos dispositivos. 20 periodic. In the same way, the manufacturing process of said devices will be described.
A continuación se describirán algunos ejemplos de realizaciones de la presente invención. Se entenderá que esta descripción tiene el propósito de detallar una o varias realizaciones en particular de la invención y no el de limitar la invención a estas específicas Some examples of embodiments of the present invention will be described below. It will be understood that this description is intended to detail one or more particular embodiments of the invention and not to limit the invention to these specific ones.
25 configuraciones. 25 settings
En general, el presente invento comprende un dispositivo fotovoltaico que convierte la luz incidente en electricidad. Dicho dispositivo comprende una región fotoactiva, formada por uno o varios materiales semiconductores, en la que la radiación incidente facilita la In general, the present invention comprises a photovoltaic device that converts the incident light into electricity. Said device comprises a photoactive region, formed by one or several semiconductor materials, in which the incident radiation facilitates the
30 promoción de electrones desde la banda de valencia a la banda de conducción, los cuales son extraídos en forma de corriente fotoeléctrica. 30 promotion of electrons from the valence band to the conduction band, which are extracted in the form of photoelectric current.
Por ser la realización preferida de esta invención una célula solar de capa fina, dicho material semiconductor fotoactivo puede estar compuesto por uniones p-n, o p-i-n, en caso As the preferred embodiment of this invention is a thin-layer solar cell, said photoactive semiconductor material can be composed of p-n, or p-i-n junctions, in case
35 de tratarse de Si amorfo, semiconductores CIGS, (Cu(InGa)Se2, Cobre, Indio, Galio y 35 being Si amorphous, CIGS semiconductors, (Cu (InGa) Se2, Copper, Indian, Gallium and
Selenio), Teluro de Cadmio, u otro semiconductor que por sus características pudiera ser susceptible de ser usado como material fotoactivo en células fotovoltaicas de capa fina. Selenium), Cadmium Telide, or other semiconductor that, due to its characteristics, could be used as a photoactive material in thin-film photovoltaic cells.
En las figuras de la presente invención se pretende representar una célula solar de capa fina formada por cuatro capas, siendo estas un sustrato transparente (04), de vidrio, por ejemplo, u otro material no conductor transparente, un electrodo anterior compuesto por material conductor transparente (03), pudiendo este ser un óxido conductor transparente o TCO, como por ejemplo óxido de indio u óxido de zinc, una o varias capas de material semiconductor fotoactivo (02), pudiendo tratarse, por ejemplo, de capas de silicio amorfo p-n In the figures of the present invention it is intended to represent a thin layer solar cell formed by four layers, these being a transparent substrate (04), of glass, for example, or other transparent non-conductive material, an anterior electrode composed of conductive material transparent (03), this being a transparent conductive oxide or TCO, such as indium oxide or zinc oxide, one or several layers of photoactive semiconductor material (02), being able, for example, to be layers of amorphous silicon pn
o p-i-n, de teluro de cadmio o de CIGS, y un electrodo posterior compuesto por una o varias capas de material conductor (01). or p-i-n, cadmium tellurium or CIGS, and a posterior electrode consisting of one or several layers of conductive material (01).
En una realización preferida, se tiene un dispositivo fotovoltaico de capa fina que comprende un sustrato transparente (04), sobre el que se deposita una capa de material conductor transparente (03) (también del orden de micras, como se ha descrito previamente), a continuación una o varias capas de material semiconductor fotoactivo (02), pudiendo tratarse igualmente, de capas de silicio amorfo p-n o p-i-n, de teluro de cadmio o de CIGS, por ejemplo, y por último un electrodo posterior compuesto por una o varias capas de material conductor (01). En esta realización, previamente a la deposición de las capas de material semiconductor fotoactivo (02), se realizan nanoestructuras en forma de cavidades de tamaño nanométrico periódicamente distribuidas, sobre el electrodo anterior compuesto por material conductor transparente (03), y posteriormente se depositan las capas de material semiconductor fotoactivo (02) rellenando sus cavidades. In a preferred embodiment, there is a thin layer photovoltaic device comprising a transparent substrate (04), on which a layer of transparent conductive material (03) is deposited (also of the order of microns, as previously described), then one or several layers of photoactive semiconductor material (02), which may also be layers of amorphous silicon pn or pin, cadmium tellurium or CIGS, for example, and finally a rear electrode consisting of one or more layers of conductive material (01). In this embodiment, prior to the deposition of the layers of photoactive semiconductor material (02), nanostructures are made in the form of periodically distributed nanometric cavities, on the anterior electrode composed of transparent conductive material (03), and subsequently deposited layers of photoactive semiconductor material (02) filling its cavities.
En otra realización preferida, además de realizar las nanoestructuras sobre el electrodo anterior compuesto por material conductor transparente (03) y rellenarlas con la capa de material semiconductor fotoactivo (02), se realizan otras nanoestructuras sobre la capa de material semiconductor fotoactivo (02) situada en la interfaz entre éste último y la capa contigua de material conductor (01), en forma de cavidades de tamaño nanométrico periódicamente distribuidas. Tras realizar las nanoestructuras sobre la capa de material semiconductor fotoactivo (02), se depositan una o varias capas de material conductor (01) rellenando las cavidades realizadas. El actual estado de la técnica hace que la capa de material conductor transparente (03) tenga que ser del orden de micras, mientras que el resto de capas (exceptuando el sustrato transparente (04)), tienen un espesor nanométrico. In another preferred embodiment, in addition to performing the nanostructures on the anterior electrode composed of transparent conductive material (03) and filling them with the layer of photoactive semiconductor material (02), other nanostructures are made on the layer of photoactive semiconductor material (02) located at the interface between the latter and the contiguous layer of conductive material (01), in the form of periodically distributed nanometric cavities. After performing the nanostructures on the layer of photoactive semiconductor material (02), one or more layers of conductive material (01) are deposited filling the cavities made. The current state of the art means that the layer of transparent conductive material (03) has to be of the order of microns, while the rest of the layers (except the transparent substrate (04)), have a nanometric thickness.
Como ya se ha citado anteriormente, el electrodo anterior de la célula solar descrita estará compuesto por material conductor transparente (03), (cátodo o ánodo en función de la configuración de las capas de material fotoactivo). En el lado opuesto de la célula se encuentra el electrodo posterior, compuesto por una o varias capas de material conductor (01). Está parte del dispositivo fotovoltaico estará formada por una o varias capas de material conductor (bien sea un metal o un óxido conductor). As already mentioned above, the anterior electrode of the described solar cell will be composed of transparent conductive material (03), (cathode or anode depending on the configuration of the layers of photoactive material). On the opposite side of the cell is the posterior electrode, consisting of one or several layers of conductive material (01). This part of the photovoltaic device will consist of one or several layers of conductive material (either a metal or a conductive oxide).
Las configuraciones descritas en párrafos anteriores, dan lugar a un dispositivo fotovoltaico de capa fina con estructura de cristal fotónico, que a su vez se comporta como un sistema de confinamiento cuántico. La combinación de este tipo de estructura y el comportamiento como un sistema de confinamiento cuántico, se traduce en una mejora considerable del conjunto, pues supone un mejor atrapamiento de la luz al quedar esta confinada y producirse resonancias en el interior del cristal, y además se mejora la eficiencia cuántica del dispositivo. The configurations described in previous paragraphs, give rise to a thin layer photovoltaic device with a photonic crystal structure, which in turn behaves like a quantum confinement system. The combination of this type of structure and behavior as a quantum confinement system, translates into a considerable improvement of the whole, since it involves a better entrapment of light when it is confined and resonances occur inside the glass, and also Improves the quantum efficiency of the device.
Uno de los desafíos a la hora de poder fabricar estos dispositivos es conseguir que las nanoestructuras se distribuyan de manera periódica para conseguir así una estructura de cristal fotónico. La manera de conseguir esta disposición tan específica, no se consigue haciendo crecer las nanoestructuras, sino realizando las cavidades y rellenando éstas posteriormente, consiguiendo de esta manera que un conjunto de nanopilares, por ejemplo de material semiconductor fotoactivo (02), queden embebidos en la capa correspondiente al electrodo anterior compuesto por material conductor transparente (03), como puede verse en las figuras 1, 2, 3 y 4, o que un conjunto de nanopilares pertenecientes al electrodo posterior compuesto por material conductor (01), queden embebidos en el material semiconductor fotoactivo (02), como puede verse en las figuras 3 y 4. Dichas cavidades de tamaño nanométrico y periódicamente distribuidas se realizan mediante tecnologías de litografía por interferometría láser o ablación por interferometría láser. One of the challenges when it comes to manufacturing these devices is to get the nanostructures distributed periodically to achieve a photonic crystal structure. The way to achieve this very specific arrangement, is not achieved by growing the nanostructures, but by making the cavities and filling them later, thus obtaining that a set of nanopilars, for example of photoactive semiconductor material (02), are embedded in the layer corresponding to the anterior electrode composed of transparent conductive material (03), as can be seen in Figures 1, 2, 3 and 4, or that a set of nanopillars belonging to the posterior electrode composed of conductive material (01), are embedded in the photoactive semiconductor material (02), as can be seen in Figures 3 and 4. Said nanometric-sized and periodically distributed cavities are made by lithography technologies by laser interferometry or laser interferometry ablation.
Por tanto, el proceso de fabricación de algunas realizaciones de la presente invención comienza por realizar las cavidades nanométricas y periódicamente distribuidas sobre el electrodo anterior compuesto por material conductor transparente (03), o sobre el material semiconductor fotoactivo (02). Therefore, the manufacturing process of some embodiments of the present invention begins by performing the nanometric cavities and periodically distributed on the anterior electrode composed of transparent conductive material (03), or on the photoactive semiconductor material (02).
Como se ha citado, las tecnologías empleadas para realizar las nanoestructuras serán técnicas de procesado láser, bien litografía por interferometría láser, bien ablación por interferometría láser. As mentioned, the technologies used to perform the nanostructures will be laser processing techniques, either lithography by laser interferometry, or ablation by laser interferometry.
En el caso de emplear el proceso de litografía por interferometría láser, primeramente se suministra la superficie sobre la cual quieren realizarse las nanoestructuras, en este caso el electrodo anterior compuesto por material conductor transparente (03), o el material semiconductor fotoactivo (02), según la superficie que queramos nanoestructurar. A continuación, se procede a la deposición de una capa de fotorresina, pudiendo emplearse tanto fotorresinas orgánicas como inorgánicas. El proceso de desposición de ésta, puede realizarse mediante distintas técnicas, como por ejemplo una técnica de centrifugado (del inglés, spin coating), o similar. Tras la deposición se procede al horneado del conjunto para eliminar el exceso de solvente. Esta etapa juega un importante papel en el proceso, ya que tras este paso la fotorresina se vuelve fotosensible, siendo capaz de formar imágenes. Una sobre cocción reducirá la solubilidad de la fotorresina destruyendo las regiones sensibles, y una cocción excesivamente suave evitará que la luz llegue a las regiones sensibles, pues quedará solvente en exceso, causando una baja resistencia al grabado. In the case of using the lithography process by laser interferometry, firstly the surface on which the nanostructures want to be made is supplied, in this case the anterior electrode composed of transparent conductive material (03), or the photoactive semiconductor material (02), according to the surface we want to nanostructure. Then, a photoresist layer is deposited, both organic and inorganic photoresists can be used. The process of deposition of the latter can be carried out by different techniques, such as a spinning technique (English, spin coating), or the like. After deposition, the whole is baked to remove excess solvent. This stage plays an important role in the process, since after this step the photoresist becomes photosensitive, being able to form images. Overcooking will reduce the solubility of the photoresist by destroying the sensitive regions, and overly gentle cooking will prevent the light from reaching the sensitive regions, as it will remain excessively solvent, causing low resistance to etching.
A continuación, se procede a la fase de exposición de la fotorresina mediante una fuente láser, pudiendo rotar el electrodo anterior compuesto por material conductor transparente Then, the exposure phase of the photoresist is carried out by means of a laser source, the anterior electrode composed of transparent conductive material being able to rotate
(03) o el material semiconductor fotoactivo (02) para lograr exponer la mayor área posible. Como resultado, se forma un patrón latente sobre la superficie que sigue la trayectoria del haz de láser. (03) or the photoactive semiconductor material (02) to expose as much area as possible. As a result, a latent pattern is formed on the surface that follows the path of the laser beam.
La técnica de litografía por interferometría láser aprovecha la gran coherencia de la fuente empleada para generar los patrones de interferencia. Estas figuras se obtienen por la superposición de dos o más haces láser, utilizando un interferómetro. En su forma más simple, dos haces coherentes entre sí de longitud de onda A, incidentes en la superficie con un ángulo de incidencia e, (ángulo mitad entre ambos haces), producen una distribución de intensidad sinusoidal creando una figura de intensidad modulada con un periodo A, que viene definido por la siguiente expresión: The laser interferometry lithography technique takes advantage of the great coherence of the source used to generate the interference patterns. These figures are obtained by superimposing two or more laser beams, using an interferometer. In its simplest form, two coherent beams of wavelength A, incident on the surface with an angle of incidence and, (half angle between both beams), produce a sinusoidal intensity distribution creating a modulated intensity figure with a period A, which is defined by the following expression:
ATO
A= A =
- --
- s i-8 s i-8
Este patrón de interferencia, define una modulación periódica en la topografía del sustrato empleado, en este caso, la superficie del electrodo anterior compuesto por material conductor transparente (03), o el material semiconductor fotoactivo (02). This interference pattern defines a periodic modulation in the topography of the substrate used, in this case, the surface of the anterior electrode composed of transparent conductive material (03), or the photoactive semiconductor material (02).
A continuación, se procede al revelado del dispositivo. Este procedimiento consiste en la aplicación de solventes sobre la fotorresina previamente irradiada. Dependiendo del sistema, es posible eliminar selectivamente las regiones expuestas o las no expuestas. En el caso de tratarse de una fotorresina positiva, las zonas irradiadas tenderán a aumentar su solubilidad al aplicarles la solución reveladora, mientras que si se trata de fotorresinas negativas, las zonas expuestas disminuirán su solubilidad al revelarlas. El revelado puede llevarse a cabo bien por inmersión, bien mediante una técnica de spray o por otras técnicas similares. Independientemente del método utilizado, siempre debe ir acompañada de un enjuague a fondo y secado para asegurar que no continúa la acción de revelado una vez que se retira el revelador de la superficie. Next, the device is developed. This procedure consists in the application of solvents on the previously irradiated photoresist. Depending on the system, it is possible to selectively remove exposed or unexposed regions. In the case of a positive photoresist, the irradiated areas will tend to increase their solubility by applying the developer solution, while if they are negative photoresists, the exposed areas will decrease their solubility when revealed. The development can be carried out either by immersion, either by a spray technique or by other similar techniques. Regardless of the method used, it should always be accompanied by a thorough rinse and drying to ensure that the development action does not continue once the developer is removed from the surface.
Finalmente se aplica un tratamiento químico mediante el cual un reactivo elimina la fotorresina restante, quedando definitivamente grabado un patrón en el electrodo anterior compuesto por material conductor transparente (03), o en el material semiconductor fotoactivo (02), según la superficie que se esté nanoestructurando. Finally, a chemical treatment is applied by means of which a reagent removes the remaining photoresist, a pattern being definitely etched on the anterior electrode composed of transparent conductive material (03), or on the photoactive semiconductor material (02), depending on the surface being nanostructuring
En el caso de emplear el método de ablación por interferometría láser para realizar las nanoestructuras, las condiciones deberán adaptarse al material sobre el que estas se realicen, bien el material del que esté compuesto el electrodo anterior (material conductor transparente) (03), o bien el material semiconductor fotoactivo (02). En principio bastaría con emplear láseres con una longitud de onda aproximadamente comprendida entre los 180 y los 350nm (10-9m), y con una pulsación preferiblemente de femtosegundos. In the case of using the laser interferometry ablation method to perform the nanostructures, the conditions must be adapted to the material on which they are made, either the material of which the anterior electrode is composed (transparent conductive material) (03), or well the photoactive semiconductor material (02). In principle it would be enough to use lasers with a wavelength approximately between 180 and 350nm (10-9m), and preferably with a pulse of femtoseconds.
En esta realización, primeramente se suministra la superficie sobre la cual quieren realizarse las nanoestructuras, en este caso el electrodo anterior compuesto por material conductor transparente (03), o el material semiconductor fotoactivo (02), según la superficie que queramos nanoestructurar. A continuación, se irradia mediante un láser monocromático y coherente que genera en la superficie una alta densidad de corriente, transmitiéndose la energía de los fotones a energía electrónica, mecánica o térmica, lo que provoca una eliminación de material superficial. Por tanto, el proceso es iniciado por la interacción entre la radiación del haz láser y la superficie del electrodo anterior compuesto por material conductor transparente (03), o el material semiconductor fotoactivo (02), produciéndose la absorción de energía, la localización de calor en un punto de la superficie y la consecuente evaporación de material. In this embodiment, first the surface on which the nanostructures want to be made is supplied, in this case the anterior electrode composed of transparent conductive material (03), or the photoactive semiconductor material (02), depending on the surface we want to nanostructure. It is then irradiated by means of a monochromatic and coherent laser that generates a high current density on the surface, transmitting the energy of the photons to electronic, mechanical or thermal energy, which causes a removal of surface material. Therefore, the process is initiated by the interaction between the radiation of the laser beam and the surface of the anterior electrode composed of transparent conductive material (03), or the photoactive semiconductor material (02), producing energy absorption, heat localization at a point on the surface and the consequent evaporation of material.
La relación lineal entre el cuadrado del diámetro del cráter y el logaritmo de la fluencia del láser es de la forma: The linear relationship between the square of the diameter of the crater and the log of the creep of the laser is of the form:
D� =��o� I-�Fo�FthD� = ��o� I-�Fo�Fth
5 Donde D es el diámetro del área en que se ha realizado la ablación, w0 es el radio del punto focal, Fo es el pico de fluencia de ablación y Fth5 Where D is the diameter of the area in which the ablation was performed, w0 is the radius of the focal point, Fo is the peak of ablation creep and Fth
l =1 es el umbral de ablación para un único pulso. l = 1 is the ablation threshold for a single pulse.
En función de los parámetros de ablación se conseguirá una velocidad de grabado Depending on the ablation parameters, an engraving speed will be achieved
10 (profundidad de grabado por pulso) d(F). Los parámetros de ablación son: el coeficiente de absorción efectivo, aeff, el umbral de fluencia Fth, y la fluencia de ablación F, de manera que la velocidad a la que se realizará el grabado, (10-9m/pulso), viene definida por: 10 (pulse engraving depth) d (F). The ablation parameters are: the effective absorption coefficient, aeff, the creep threshold Fth, and the ablation creep F, so that the speed at which the engraving will be performed, (10-9m / pulse), is defined by:
d(F) = I-(F)d (F) = I- (F)
__
eff Ftheff Fth
15 En función del material del que esté compuesto el electrodo anterior (material conductor transparente) (03), o el material semiconductor fotoactivo (02), habrá que superar distintos umbrales de fluencia, desde los 0.04 hasta los 1.7 J/cm2 aproximadamente. Las pulsaciones vendrán determinadas por el tipo de láser empleado. Preferiblemente se utilizará un femtoláser para realizar el proceso de ablación, de manera que se disminuya la zona 15 Depending on the material of which the previous electrode (transparent conductive material) (03), or the photoactive semiconductor material (02) is composed, different creep thresholds must be exceeded, from 0.04 to approximately 1.7 J / cm2. The pulsations will be determined by the type of laser used. Preferably a femtlaser will be used to perform the ablation process, so that the area is decreased
20 afectada por el calor (del inglés, heat afected zone), pero podrán emplearse otros tipos, como picoláseres o nanoláseres. 20 affected by heat (in English, heat afected zone), but other types, such as picoláseres or nanoláseres, may be used.
Por último, decir que en caso de realizar una configuración como la que se muestra en las figuras 1 y 2, primeramente se dispondrá el sustrato transparente (04), a continuación se 25 colocará sobre el electrodo anterior compuesto por material conductor transparente (03), sobre el cual se realizarán las nanoestructuras mediante una de las dos metodologías explicadas en los párrafos anteriores, a saber, litografía por interferometría láser, o ablación por interferometría láser. Por último se depositarán la capa de material semiconductor fotoactivo (02) rellenando las cavidades realizadas en la superficie del electrodo anterior Finally, say that if a configuration like the one shown in figures 1 and 2 is made, the transparent substrate (04) will first be arranged, then it will be placed on the previous electrode composed of transparent conductive material (03) , on which the nanostructures will be carried out by one of the two methodologies explained in the previous paragraphs, namely lithography by laser interferometry, or ablation by laser interferometry. Finally, the layer of photoactive semiconductor material (02) will be deposited filling the cavities made on the surface of the anterior electrode
30 compuesto por material conductor transparente (03), y posteriormente el electrodo posterior compuesto por una o varias capas de material conductor (01). 30 composed of transparent conductive material (03), and subsequently the rear electrode composed of one or several layers of conductive material (01).
En caso de realizar una configuración como la que se muestra en las figuras 3 y 4, primeramente se dispondrá el sustrato transparente (04), a continuación se depositará el electrodo anterior compuesto por material conductor transparente (03), sobre el cual se realizarán las nanoestructuras mediante una de las dos metodologías explicadas en los 5 párrafos anteriores, a saber, litografía por interferometría láser, o ablación por interferometría láser. Posteriormente, se depositarán las capas de material semiconductor fotoactivo (02) rellenando las cavidades realizadas en el electrodo anterior, y sobre la superficie de material semiconductor fotoactivo (02) situada en la interfaz con la capa contigua de material conductor (01), se realizarán de nuevo nanoestructuras mediante una In the case of a configuration such as that shown in Figures 3 and 4, the transparent substrate (04) will first be arranged, then the previous electrode composed of transparent conductive material (03) will be deposited, on which the nanostructures using one of the two methodologies explained in the 5 preceding paragraphs, namely lithography by laser interferometry, or laser interferometry ablation. Subsequently, the layers of photoactive semiconductor material (02) will be deposited filling the cavities made in the previous electrode, and on the surface of photoactive semiconductor material (02) located at the interface with the adjacent layer of conductive material (01), they will be made again nanostructures through a
10 de las dos metodologías explicadas en los párrafos anteriores, a saber, litografía por interferometría láser, o ablación por interferometría láser. Por último, se depositará el electrodo posterior compuesto por una o varias capas de material conductor (01), rellenando las cavidades realizadas en el material semiconductor fotoactivo (02). 10 of the two methodologies explained in the previous paragraphs, namely lithography by laser interferometry, or laser interferometry ablation. Finally, the posterior electrode composed of one or more layers of conductive material (01) will be deposited, filling the cavities made in the photoactive semiconductor material (02).
15 La colocación de las distintas capas o estratos puede realizarse mediante diferentes técnicas, como por ejemplo una deposición de vapor química, CVD (del inglés, Chemical Vapor Deposition), o una deposición de vapor física, PVD, (del inglés, Physical Vapor Deposition). 15 The different layers or layers can be placed using different techniques, such as chemical vapor deposition, CVD (Chemical Vapor Deposition), or physical vapor deposition, PVD (Physical Vapor Deposition) ).
20 Una vez finalizado el procedimiento, se obtendrá una célula solar de capa fina, con nanoestructuras periódicas en forma de cavidades, creando una estructura de cristal fotónico y consiguiendo un sistema de confinamiento cuántico, y por tanto una mejora en el atrapamiento de luz y en la eficiencia cuántica. 20 Once the procedure is finished, a thin-layer solar cell will be obtained, with periodic nanostructures in the form of cavities, creating a photonic crystal structure and achieving a quantum confinement system, and therefore an improvement in the entrapment of light and quantum efficiency
Claims (8)
- --
- una etapa en la que se deposita un electrodo anterior compuesto por material conductor transparente (03), sobre el sustrato transparente (04) -una etapa de formación de una red periódica de cavidades de tamaño nanométrico sobre la superficie del electrodo anterior compuesto por material conductor transparente (03), mediante un proceso de litografía por interferometría láser o ablación por interferometría láser. -una etapa en la que se depositan una o varias capas de material semiconductor fotoactivo (02) sobre el electrodo anterior rellenando las cavidades creadas en la etapa anterior -una etapa de deposición del electrodo posterior compuesto por una o varias capas de material conductor (01), sobre el material semiconductor fotoactivo (02). a stage in which an anterior electrode composed of transparent conductive material (03) is deposited on the transparent substrate (04) -a stage of formation of a periodic network of nanometric-sized cavities on the surface of the anterior electrode composed of conductive material transparent (03), by a lithography process by laser interferometry or laser interferometry ablation. -a stage in which one or several layers of photoactive semiconductor material (02) are deposited on the anterior electrode filling the cavities created in the previous stage -a stage of deposition of the rear electrode composed of one or more layers of conductive material (01 ), on the photoactive semiconductor material (02).
- 7. 7.
- Procedimiento de fabricación del dispositivo fotovoltaico de capa fina de acuerdo con la reivindicación 6, caracterizado por que posteriormente a la etapa de deposición de una o varias capas de material semiconductor fotoactivo (02) sobre el electrodo anterior rellenando sus cavidades, se realiza una red periódica de cavidades de tamaño nanométrico sobre la superficie del material semiconductor fotoactivo (02) situada en la interfaz con el material conductor (01), y posteriormente se depositan una o varias capas de material conductor (01), sobre el material semiconductor fotoactivo (02) rellenando sus cavidades. Manufacturing process of the thin layer photovoltaic device according to claim 6, characterized in that after the stage of deposition of one or several layers of photoactive semiconductor material (02) on the previous electrode filling its cavities, a periodic network is made of nano-sized cavities on the surface of the photoactive semiconductor material (02) located at the interface with the conductive material (01), and subsequently one or more layers of conductive material (01) are deposited, on the photoactive semiconductor material (02) filling their cavities.
- 8. 8.
- Procedimiento de fabricación del dispositivo fotovoltaico de capa fina de acuerdo con la reivindicación 6, caracterizado por que la formación de nanoestructuras se realiza mediante un proceso de litografía por interferometría láser que consta de las siguiente etapas: -una etapa en la que se proporciona la superficie sobre la que se quieren realizar las nanoestructuras, siendo esta el electrodo anterior compuesto por material conductor transparente (03) o el material semiconductor fotoactivo (02) -una etapa de deposición de una fotorresina sobre la superficie sobre la que se quieren realizar las nanoestructuras -una etapa de exposición del conjunto formado por la superficie sobre la que se quieren realizar las nanoestructuras y la fotorresina, mediante una fuente láser generada por un interferómetro de dos o más haces -una etapa de revelado del conjunto formado por la fotorresina y la superficie sobre la que se quieren realizar las nanoestructuras -una etapa de tratamiento químico para la creación de las nanoestructuras en la superficie en que se desean realizar. Manufacturing process of the thin layer photovoltaic device according to claim 6, characterized in that the formation of nanostructures is carried out by a lithography process by laser interferometry consisting of the following stages: -a stage in which the surface is provided on which the nanostructures are to be carried out, being the previous electrode composed of transparent conductive material (03) or the photoactive semiconductor material (02) - a stage of deposition of a photoresist on the surface on which the nanostructures are to be made - a stage of exposure of the assembly formed by the surface on which the nanostructures and the photoresist are to be performed, by means of a laser source generated by an interferometer of two or more beams - a stage of development of the assembly formed by the photoresist and the surface on what you want to do the nanostructures - a stage of treatment qu Imic for the creation of nanostructures on the surface on which they wish to perform.
- 9. 9.
- Procedimiento de fabricación del dispositivo fotovoltaico de capa fina de acuerdo con la reivindicación 6, caracterizado por que la formación de nanoestructuras se realiza mediante un proceso de ablación por interferometría láser que consta de las siguiente Manufacturing process of the thin layer photovoltaic device according to claim 6, characterized in that the formation of nanostructures is carried out by a laser interferometry ablation process consisting of the following
- Categoría Category
- 56 Documentos citados Reivindicaciones afectadas 56 Documents cited Claims Affected
- Y Y
- EP 2523221 A1 (SHARP KK; UNIV KYOTO) 14.11.2012, 1-9 EP 2523221 A1 (SHARP KK; UNIV KYOTO) 14.11.2012, 1-9
- párrafos [0032]-[0045]; figuras 1-2. paragraphs [0032] - [0045]; figures 1-2.
- Y Y
- US 2008277681 A1 (UNIV TSINGHUA; HON HAI PREC IND CO LTD) 13.11.2008, 1-3,6,7 US 2008277681 A1 (UNIV TSINGHUA; HON HAI PREC IND CO LTD) 13.11.2008, 1-3,6,7
- párrafos [0017]-[002]; figuras. paragraphs [0017] - [002]; figures.
- A TO
- 4,5 4,5
- Y Y
- US 2009128022 A1 (KOREA MACH & MATERIALS INST et al.) 21.05.2009, 1-3 US 2009128022 A1 (KOREA MACH & MATERIALS INST et al.) 05/21/2009, 1-3
- párrafos [006],[0047]-[0050]; figuras. paragraphs [006], [0047] - [0050]; figures.
- Y Y
- US 2011203663 A1 (PRATHER DENNIS et al.) 25.08.2011, 4-5 US 2011203663 A1 (PRATHER DENNIS et al.) 08.25.2011, 4-5
- párrafos [0055]-[0057],[0071]. paragraphs [0055] - [0057], [0071].
- A TO
- 1-3 1-3
- Y Y
- US 2010038659 A1 (CHEN DING-YUAN et al.) 18.02.2010, 6-9 US 2010038659 A1 (CHEN DING-YUAN et al.) 18.02.2010, 6-9
- párrafos [0017]-[0046]; figuras. paragraphs [0017] - [0046]; figures.
- A TO
- 1-5 1-5
- Y Y
- US 2013288425 A1 (SOLEXEL INC) 31.10.2013, 6-9 US 2013288425 A1 (SOLEXEL INC) 31.10.2013, 6-9
- párrafo [0055]. paragraph [0055].
- Y Y
- US 2010282304 A1 (IND TECH RES INST) 11.11.2010, 6-8 US 2010282304 A1 (IND TECH RES INST) 11.11.2010, 6-8
- párrafo [0033]. paragraph [0033].
- A TO
- US 2003057417 A1 (KOREA ADVANCED INST SCI & TECH) 27.03.2003, 1-6 US 2003057417 A1 (KOREA ADVANCED INST SCI & TECH) 27.03.2003, 1-6
- párrafos [0028]-[0032]. paragraphs [0028] - [0032].
- Categoría de los documentos citados X: de particular relevancia Y: de particular relevancia combinado con otro/s de la misma categoría A: refleja el estado de la técnica O: referido a divulgación no escrita P: publicado entre la fecha de prioridad y la de presentación de la solicitud E: documento anterior, pero publicado después de la fecha de presentación de la solicitud Category of the documents cited X: of particular relevance Y: of particular relevance combined with other / s of the same category A: reflects the state of the art O: refers to unwritten disclosure P: published between the priority date and the date of priority submission of the application E: previous document, but published after the date of submission of the application
- El presente informe ha sido realizado • para todas las reivindicaciones • para las reivindicaciones nº: This report has been prepared • for all claims • for claims no:
- Fecha de realización del informe 30.05.2014 Date of realization of the report 30.05.2014
- Examinador L. J. García Aparicio Página 1/5 Examiner L. J. García Aparicio Page 1/5
- Novedad (Art. 6.1 LP 11/1986) Novelty (Art. 6.1 LP 11/1986)
- Reivindicaciones Reivindicaciones 1-9 SI NO Claims Claims 1-9 IF NOT
- Actividad inventiva (Art. 8.1 LP11/1986) Inventive activity (Art. 8.1 LP11 / 1986)
- Reivindicaciones Reivindicaciones 1-9 SI NO Claims Claims 1-9 IF NOT
- Documento Document
- Número Publicación o Identificación Fecha Publicación Publication or Identification Number publication date
- D01 D01
- EP 2523221 A1 (SHARP KK; UNIV KYOTO) 14.11.2012 EP 2523221 A1 (SHARP KK; UNIV KYOTO) 11/14/2012
- D02 D02
- US 2008277681 A1 (UNIV TSINGHUA; HON HAI PREC IND CO LTD) 13.11.2008 US 2008277681 A1 (UNIV TSINGHUA; HON HAI PREC IND CO LTD) 13.11.2008
- D03 D03
- US 2009128022 A1 (KOREA MACH & MATERIALS INST et al.) 21.05.2009 US 2009128022 A1 (KOREA MACH & MATERIALS INST et al.) 05/21/2009
- D04 D04
- US 2011203663 A1 (PRATHER DENNIS et al.) 25.08.2011 US 2011203663 A1 (PRATHER DENNIS et al.) 08.25.2011
- D05 D05
- US 2010038659 A1 (CHEN DING-YUAN et al.) 18.02.2010 US 2010038659 A1 (CHEN DING-YUAN et al.) 02-18-2010
- D06 D06
- US 2013288425 A1 (SOLEXEL INC; SOLEXEL INC) 31.10.2013 US 2013288425 A1 (SOLEXEL INC; SOLEXEL INC) 10/31/2013
- D07 D07
- US 2010282304 A1 (IND TECH RES INST) 11.11.2010 US 2010282304 A1 (IND TECH RES INST) 11.11.2010
- D08 D08
- US 2003057417 A1 (KOREA ADVANCED INST SCI & TECH) 27.03.2003 US 2003057417 A1 (KOREA ADVANCED INST SCI & TECH) 03/27/2003
- --
- Un sustrato transparente (sustrato de cristal, ref 5, figuras 1a, 1b, 1c) -Un electrodo anterior compuesto por un material conductor transparente (capa conductora 3, fig 1) depositado sobre el sustrato transparente (5) (figura 1), A transparent substrate (glass substrate, ref 5, figures 1a, 1b, 1c) -A previous electrode composed of a transparent conductive material (conductive layer 3, fig 1) deposited on the transparent substrate (5) (figure 1),
- --
- Una o varias capas de material semiconductor fotoactivo (2, figura 1) depositadas sobre el electrodo anterior (capa conductora 3, figura 1) cuya estructura está nanoestructurada con cavidades (nanovarillas 30, figura 1b) de tamaño nanométrico distribuidas periódicamente (figura 2). One or several layers of photoactive semiconductor material (2, figure 1) deposited on the anterior electrode (conductive layer 3, figure 1) whose structure is nanostructured with cavities (nanovarillas 30, figure 1b) of nanometric size distributed periodically (figure 2).
- --
- Un electrodo posterior (capa conductora 4) compuesto por una o varias capas depositadas sobre el material semiconductor fotoactivo (2). A rear electrode (conductive layer 4) composed of one or more layers deposited on the photoactive semiconductor material (2).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES201331617A ES2466515B1 (en) | 2013-11-06 | 2013-11-06 | Thin layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing procedure |
| PCT/ES2014/070827 WO2015067835A2 (en) | 2013-11-06 | 2014-11-06 | Thin-film photovoltaic device and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES201331617A ES2466515B1 (en) | 2013-11-06 | 2013-11-06 | Thin layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing procedure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES2466515A1 true ES2466515A1 (en) | 2014-06-10 |
| ES2466515B1 ES2466515B1 (en) | 2015-03-23 |
Family
ID=50846945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES201331617A Withdrawn - After Issue ES2466515B1 (en) | 2013-11-06 | 2013-11-06 | Thin layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing procedure |
Country Status (2)
| Country | Link |
|---|---|
| ES (1) | ES2466515B1 (en) |
| WO (1) | WO2015067835A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT201600086109A1 (en) * | 2016-08-19 | 2018-02-19 | Goal S R L | PHOTONIC CRYSTAL FILM WITH HIGH VALUE OF ENERGY CONVERSION OF PARTICULAR APPLICATION IN SOLAR SILICON CELLS IN ORGANIC SOLAR CELLS IN MULTIPLUNCTION SOLAR CELLS AND THIN PHOTOVOLTAIC FILMS. |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030057417A1 (en) * | 2001-09-25 | 2003-03-27 | Korea Advanced Institute Of Science And Technology | Photonic crystal organic light emitting device having high extraction efficiency |
| US20080277681A1 (en) * | 2007-05-09 | 2008-11-13 | Tsinghua University | Light emitting diode |
| US20090128022A1 (en) * | 2007-11-21 | 2009-05-21 | Korea Institute Of Machinery & Materials | Organic light emitting device and manufacturing method thereof |
| US20100038659A1 (en) * | 2008-08-18 | 2010-02-18 | Ding-Yuan Chen | Omnidirectional Reflector |
| US20100282304A1 (en) * | 2008-11-18 | 2010-11-11 | Industrial Technology Research Institute | Solar cell and method of manufacturing the same |
| US20110203663A1 (en) * | 2010-02-22 | 2011-08-25 | Dennis Prather | Photonic crystal enhanced light trapping solar cell |
| EP2523221A1 (en) * | 2010-01-07 | 2012-11-14 | Sharp Kabushiki Kaisha | Photoelectric transducer |
| US20130288425A1 (en) * | 2011-08-05 | 2013-10-31 | Solexel, Inc. | End point detection for back contact solar cell laser via drilling |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7482532B2 (en) | 2005-01-19 | 2009-01-27 | Massachusetts Institute Of Technology | Light trapping in thin film solar cells using textured photonic crystal |
| US20070012355A1 (en) | 2005-07-12 | 2007-01-18 | Locascio Michael | Nanostructured material comprising semiconductor nanocrystal complexes for use in solar cell and method of making a solar cell comprising nanostructured material |
| US20070235072A1 (en) | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
| US7893348B2 (en) | 2006-08-25 | 2011-02-22 | General Electric Company | Nanowires in thin-film silicon solar cells |
| US20080110486A1 (en) | 2006-11-15 | 2008-05-15 | General Electric Company | Amorphous-crystalline tandem nanostructured solar cells |
| US20110139233A1 (en) | 2009-12-11 | 2011-06-16 | Honeywell International Inc. | Quantum dot solar cell |
| ES2346614B1 (en) | 2008-04-29 | 2011-10-03 | Consejo Superior De Investigaciones (Csic) | USE OF MODIFIED MATERIAL IN YOUR SURFACE TOPOGRAPHY IN DEVICES THAT GENERATE AN ELECTRIC CURRENT FROM INCIDENT LIGHT. |
| WO2010039631A1 (en) | 2008-09-30 | 2010-04-08 | The Regents Of The University Of California | Photonic crystal solar cell |
| US20110180133A1 (en) | 2008-10-24 | 2011-07-28 | Applied Materials, Inc. | Enhanced Silicon-TCO Interface in Thin Film Silicon Solar Cells Using Nickel Nanowires |
| US20110155215A1 (en) | 2009-12-31 | 2011-06-30 | Du Pont Apollo Limited | Solar cell having a two dimensional photonic crystal |
-
2013
- 2013-11-06 ES ES201331617A patent/ES2466515B1/en not_active Withdrawn - After Issue
-
2014
- 2014-11-06 WO PCT/ES2014/070827 patent/WO2015067835A2/en active Application Filing
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030057417A1 (en) * | 2001-09-25 | 2003-03-27 | Korea Advanced Institute Of Science And Technology | Photonic crystal organic light emitting device having high extraction efficiency |
| US20080277681A1 (en) * | 2007-05-09 | 2008-11-13 | Tsinghua University | Light emitting diode |
| US20090128022A1 (en) * | 2007-11-21 | 2009-05-21 | Korea Institute Of Machinery & Materials | Organic light emitting device and manufacturing method thereof |
| US20100038659A1 (en) * | 2008-08-18 | 2010-02-18 | Ding-Yuan Chen | Omnidirectional Reflector |
| US20100282304A1 (en) * | 2008-11-18 | 2010-11-11 | Industrial Technology Research Institute | Solar cell and method of manufacturing the same |
| EP2523221A1 (en) * | 2010-01-07 | 2012-11-14 | Sharp Kabushiki Kaisha | Photoelectric transducer |
| US20110203663A1 (en) * | 2010-02-22 | 2011-08-25 | Dennis Prather | Photonic crystal enhanced light trapping solar cell |
| US20130288425A1 (en) * | 2011-08-05 | 2013-10-31 | Solexel, Inc. | End point detection for back contact solar cell laser via drilling |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2466515B1 (en) | 2015-03-23 |
| WO2015067835A2 (en) | 2015-05-14 |
| WO2015067835A3 (en) | 2015-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jiang et al. | High efficiency multi-crystalline silicon solar cell with inverted pyramid nanostructure | |
| Nayak et al. | Efficient light trapping in silicon solar cells by ultrafast‐laser‐induced self‐assembled micro/nano structures | |
| Katiyar et al. | Enhancement of efficiency of a solar cell fabricated on black Si made by inductively coupled plasma–reactive ion etching process: a case study of a n-CdS/p-Si heterojunction cell | |
| US20110247676A1 (en) | Photonic Crystal Solar Cell | |
| Zhang et al. | Horizontal silicon nanowires with radial p–n junctions: a platform for unconventional solar cells | |
| JPWO2011074457A1 (en) | Photoelectric conversion element and method for producing photoelectric conversion element | |
| JP2009532883A (en) | Method for forming thin film photovoltaic interconnects using a self-aligned process | |
| TW201135949A (en) | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes | |
| Abdel-Latif et al. | Electrical characteristics of funnel-shaped silicon nanowire solar cells | |
| US20120118371A1 (en) | Light electron conversion element | |
| Kordrostami et al. | High absorption enhancement of invert funnel and conical nanowire solar cells with forward scattering | |
| Yang et al. | Mask-free fabrication of inverted-pyramid texture on single-crystalline Si wafer | |
| ES2466515B1 (en) | Thin layer photovoltaic device with photonic crystal structure and behavior as a quantum confinement system, and its manufacturing procedure | |
| JP2012222042A (en) | Substrate for thin film solar cell and manufacturing method therefor | |
| Kamruzzaman et al. | Optimization of Solar Cells with Various Shaped Surficial Nanostructures | |
| JP2012169565A (en) | Photodetector fabrication method | |
| JP2015026631A (en) | Plasmon resonance structure, photoelectric conversion element and solar cell | |
| Vismara et al. | Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells | |
| Fan et al. | Light-trapping characteristics of Ag nanoparticles for enhancing the energy conversion efficiency of hybrid solar cells | |
| GB2586262A (en) | Photodetector | |
| Pritom et al. | Plasmon-enhanced parabolic nanostructures for broadband absorption in ultra-thin crystalline Si solar cells | |
| Magdi et al. | Lithography-free fabrication of crystalline silicon nanowires using amorphous silicon substrate for wide-angle energy absorption applications | |
| ES2293862B2 (en) | SOLAR INTERMEDIATE BAND CELL OF QUANTIC POINTS WITH OPTIMAL COUPLING OF LIGHT BY DIFFACTION. | |
| Ullattil et al. | Investigations on the influence of surface textures on optical reflectance of multi-crystalline silicone (MC-Si) crystal surfaces-simulations and experiments | |
| JP4986170B2 (en) | Manufacturing method of substrate for solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG2A | Definitive protection |
Ref document number: 2466515 Country of ref document: ES Kind code of ref document: B1 Effective date: 20150323 |
|
| FA2A | Application withdrawn |
Effective date: 20150730 |