ES2165315B1 - PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION. - Google Patents

PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION.

Info

Publication number
ES2165315B1
ES2165315B1 ES200000813A ES200000813A ES2165315B1 ES 2165315 B1 ES2165315 B1 ES 2165315B1 ES 200000813 A ES200000813 A ES 200000813A ES 200000813 A ES200000813 A ES 200000813A ES 2165315 B1 ES2165315 B1 ES 2165315B1
Authority
ES
Spain
Prior art keywords
sic
layers
ionic
manufacture
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
ES200000813A
Other languages
Spanish (es)
Other versions
ES2165315A1 (en
Inventor
Rodriguez Alejandro Perez
Christophe Serre
Rodriguez Alberto Romano
Lleonart Juan Ramon Morante
Tinto Jaume Esteve
Leal M Cruz Acero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universitat Autonoma de Barcelona UAB
Universitat de Barcelona UB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universitat Autonoma de Barcelona UAB, Universitat de Barcelona UB filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to ES200000813A priority Critical patent/ES2165315B1/en
Priority to AU46544/01A priority patent/AU4654401A/en
Priority to PCT/ES2001/000128 priority patent/WO2001072104A1/en
Publication of ES2165315A1 publication Critical patent/ES2165315A1/en
Application granted granted Critical
Publication of ES2165315B1 publication Critical patent/ES2165315B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Ceramic Products (AREA)

Abstract

Procedimiento de fabricación de capas de carburo de silicio (sic) mediante implantación iónica de carbono y recocidos. La presente invención se refiere al uso de una combinación de implantaciones iónicas de C+ y recocidos convencionales para la fabricación de estructuras complejas multicapas basadas en SiC. Esta combinación de técnicas muy bien conocidas de la tecnología del Si proporciona una gran versatilidad en cuando a la estructura de las capas sintetizadas (estructura amorfa, policristalina, o cristalina con control de la orientación cristalina; multicapas, capas enteradas o sobre aislante) y permite la obtención de capas con muy bajos niveles de tensión residual y con superficies e interficies de muy baja rugosidad caracterizadas por la ausencia de cavidades (a diferencia de otras técnicas como CVD o MBE), siendo estos últimos puntos de suma importancia para la viabilidad y fiabilidad de las estructuras multicapa sintetizadas para diversas aplicaciones, como por ejemplo dispositivosMicroçElectroMecánicos (MEMS).Manufacturing process of silicon carbide layers (sic) by ionic carbon implantation and annealing. The present invention relates to the use of a combination of ionic C + implants and conventional anneals for the manufacture of complex multilayer structures based on SiC. This combination of very well-known techniques of Si technology provides great versatility in terms of the structure of the synthesized layers (amorphous, polycrystalline, or crystalline structure with control of the crystalline orientation; multilayers, aware layers or over insulating) and allows obtaining layers with very low levels of residual stress and with very low rough surfaces and surfaces characterized by the absence of cavities (as opposed to other techniques such as CVD or MBE), the latter being very important for viability and reliability of multilayer structures synthesized for various applications, such as MicroMechanicalMechanical (MEMS) devices.

ES200000813A 2000-03-31 2000-03-31 PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION. Expired - Fee Related ES2165315B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
ES200000813A ES2165315B1 (en) 2000-03-31 2000-03-31 PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION.
AU46544/01A AU4654401A (en) 2000-03-31 2001-03-30 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals
PCT/ES2001/000128 WO2001072104A1 (en) 2000-03-31 2001-03-30 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES200000813A ES2165315B1 (en) 2000-03-31 2000-03-31 PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION.

Publications (2)

Publication Number Publication Date
ES2165315A1 ES2165315A1 (en) 2002-03-01
ES2165315B1 true ES2165315B1 (en) 2003-08-01

Family

ID=8492974

Family Applications (1)

Application Number Title Priority Date Filing Date
ES200000813A Expired - Fee Related ES2165315B1 (en) 2000-03-31 2000-03-31 PROCEDURE FOR MANUFACTURE OF SILICON CARBIDE LAYERS (SIC) BY ION CARBON AND RECOGNIZED IONIC IMPLEMENTATION.

Country Status (3)

Country Link
AU (1) AU4654401A (en)
ES (1) ES2165315B1 (en)
WO (1) WO2001072104A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618103B1 (en) * 2001-10-12 2006-08-29 실트로닉 아게 A method for forming a layered semiconductor technology structure and corresponding layered semiconductor technology structure
JP2009149481A (en) * 2007-12-21 2009-07-09 Siltronic Ag Method for manufacturing semiconductor substrate
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
DE102016111909B4 (en) 2016-06-29 2020-08-13 Infineon Technologies Ag Micromechanical structure and method of making it
WO2018104247A1 (en) * 2016-12-05 2018-06-14 Officine Panerai Ag Timepiece component having improved tribological properties and method for optimising the tribological properties of a timepiece component

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2670563B2 (en) * 1988-10-12 1997-10-29 富士通株式会社 Method for manufacturing semiconductor device
FR2774214B1 (en) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCESS FOR PRODUCING A SEMICONDUCTOR TYPE STRUCTURE ON INSULATOR AND IN PARTICULAR SiCOI

Also Published As

Publication number Publication date
WO2001072104A1 (en) 2001-10-04
ES2165315A1 (en) 2002-03-01
AU4654401A (en) 2001-10-08

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