ES2153763A1 - Boron nitride tubular nanotubes based electron emission source consists of a low weight and low applied voltage system for cathode based emission - Google Patents

Boron nitride tubular nanotubes based electron emission source consists of a low weight and low applied voltage system for cathode based emission

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Publication number
ES2153763A1
ES2153763A1 ES009802690A ES9802690A ES2153763A1 ES 2153763 A1 ES2153763 A1 ES 2153763A1 ES 009802690 A ES009802690 A ES 009802690A ES 9802690 A ES9802690 A ES 9802690A ES 2153763 A1 ES2153763 A1 ES 2153763A1
Authority
ES
Spain
Prior art keywords
boron nitride
applied voltage
low
voltage system
electron emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES009802690A
Other languages
Spanish (es)
Other versions
ES2153763B1 (en
Inventor
Secades Albert Rubio
Martin Julio Alfonso Alonso
Eduardo Hernandez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universidad de Valladolid
Original Assignee
Universidad de Valladolid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universidad de Valladolid filed Critical Universidad de Valladolid
Priority to ES9802690A priority Critical patent/ES2153763B1/en
Publication of ES2153763A1 publication Critical patent/ES2153763A1/en
Application granted granted Critical
Publication of ES2153763B1 publication Critical patent/ES2153763B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

The boron nitride tubular nanotubes based electron emission source comprises an extremely ilghtweight system operating on small applied electric fields. Also claimed is a process for producing the source. CLAIMED PROCESS - The process permits operation at ambient temperature and low applied voltage. EMBODIMENT - The emission per unit of area is based on temperature well below the conventional 1000-2600 K and electric fields of under 103-104 volts/micrometre.
ES9802690A 1998-12-17 1998-12-17 NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE. Expired - Fee Related ES2153763B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ES9802690A ES2153763B1 (en) 1998-12-17 1998-12-17 NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES9802690A ES2153763B1 (en) 1998-12-17 1998-12-17 NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE.

Publications (2)

Publication Number Publication Date
ES2153763A1 true ES2153763A1 (en) 2001-03-01
ES2153763B1 ES2153763B1 (en) 2001-10-01

Family

ID=8306212

Family Applications (1)

Application Number Title Priority Date Filing Date
ES9802690A Expired - Fee Related ES2153763B1 (en) 1998-12-17 1998-12-17 NEW SOURCE OF ELECTRONIC ISSUANCE CONSTITUTED BY TUBULAR NANOESTRUCTURES OF BORO NITRIDE AND ITS MANUFACTURE.

Country Status (1)

Country Link
ES (1) ES2153763B1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998011588A1 (en) * 1996-09-13 1998-03-19 The Regents Of The University Of California Field emission electron source that comprises the combination of a binder material and bcn-based nanotubes
EP0945884A1 (en) * 1998-03-23 1999-09-29 Nec Corporation Field emission device using a boron nitride nanotube electron source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998011588A1 (en) * 1996-09-13 1998-03-19 The Regents Of The University Of California Field emission electron source that comprises the combination of a binder material and bcn-based nanotubes
EP0945884A1 (en) * 1998-03-23 1999-09-29 Nec Corporation Field emission device using a boron nitride nanotube electron source

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GOLBERG D et al.: "NANOTUBES IN BORON NITRIDE LASER HEATED AT HIGH PRESSURE" 30 SEPTIEMBRE 1996, APPLIED PHYSICS LETTERS, Vol. 69, NR 14, paginas 2045-2047, XP000636158 *

Also Published As

Publication number Publication date
ES2153763B1 (en) 2001-10-01

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