EP4771402A1 - Procédé de détermination d'un niveau de bruit de luminance d'une diode semi-conductrice électroluminescente - Google Patents

Procédé de détermination d'un niveau de bruit de luminance d'une diode semi-conductrice électroluminescente

Info

Publication number
EP4771402A1
EP4771402A1 EP24812415.8A EP24812415A EP4771402A1 EP 4771402 A1 EP4771402 A1 EP 4771402A1 EP 24812415 A EP24812415 A EP 24812415A EP 4771402 A1 EP4771402 A1 EP 4771402A1
Authority
EP
European Patent Office
Prior art keywords
training
semiconductor diode
noise level
data set
model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP24812415.8A
Other languages
German (de)
English (en)
Inventor
Viktor Krueckl
Michael Binder
Maximilian TAUER
Moses RICHTER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of EP4771402A1 publication Critical patent/EP4771402A1/fr
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Un procédé de détermination d'un niveau de bruit de luminance d'une diode à semi-conducteur électroluminescente comprend les étapes consistant à mesurer une tension électrique chutant aux bornes la diode à semi-conducteur pendant le fonctionnement de la diode à semi-conducteur à une intensité de courant constante afin d'obtenir un ensemble de données de tension, et à prédire le niveau de bruit de luminance sur la base de l'ensemble de données de tension à l'aide d'un modèle entraîné.
EP24812415.8A 2023-11-22 2024-11-18 Procédé de détermination d'un niveau de bruit de luminance d'une diode semi-conductrice électroluminescente Pending EP4771402A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102023132576.0A DE102023132576A1 (de) 2023-11-22 2023-11-22 Verfahren zum ermitteln eines helligkeitsrauschniveaus einer lichtemittierenden halbleiterdiode
PCT/EP2024/082730 WO2025108894A1 (fr) 2023-11-22 2024-11-18 Procédé de détermination d'un niveau de bruit de luminance d'une diode semi-conductrice électroluminescente

Publications (1)

Publication Number Publication Date
EP4771402A1 true EP4771402A1 (fr) 2026-07-08

Family

ID=93650335

Family Applications (1)

Application Number Title Priority Date Filing Date
EP24812415.8A Pending EP4771402A1 (fr) 2023-11-22 2024-11-18 Procédé de détermination d'un niveau de bruit de luminance d'une diode semi-conductrice électroluminescente

Country Status (3)

Country Link
EP (1) EP4771402A1 (fr)
DE (1) DE102023132576A1 (fr)
WO (1) WO2025108894A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102023132576A1 (de) 2023-11-22 2025-05-22 Ams-Osram International Gmbh Verfahren zum ermitteln eines helligkeitsrauschniveaus einer lichtemittierenden halbleiterdiode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013107855B4 (de) * 2013-07-23 2021-09-23 Pictiva Displays International Limited Optoelektronische Bauelementevorrichtung, Verfahren zum Herstellen einer optoelektronischen Bauelementevorrichtung und Verfahren zum Betreiben einer optoelektronischen Bauelementevorrichtung
DE102019115817B4 (de) * 2019-06-11 2025-05-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Betreiben einer Leuchtdiodenanordnung, Verfahren zum Charakterisieren einer Leuchtdiode und Leuchtdiodenanordnung
CN110362900B (zh) * 2019-07-02 2026-06-19 岭南师范学院 一种led寿命的预测方法
CN110888081A (zh) * 2019-12-19 2020-03-17 天津华来科技有限公司 一种灯具闪烁检测装置和方法
DE102023132576A1 (de) 2023-11-22 2025-05-22 Ams-Osram International Gmbh Verfahren zum ermitteln eines helligkeitsrauschniveaus einer lichtemittierenden halbleiterdiode

Also Published As

Publication number Publication date
WO2025108894A1 (fr) 2025-05-30
DE102023132576A1 (de) 2025-05-22

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