EP4716992A1 - High voltage arbitrary waveform generator - Google Patents

High voltage arbitrary waveform generator

Info

Publication number
EP4716992A1
EP4716992A1 EP24725359.4A EP24725359A EP4716992A1 EP 4716992 A1 EP4716992 A1 EP 4716992A1 EP 24725359 A EP24725359 A EP 24725359A EP 4716992 A1 EP4716992 A1 EP 4716992A1
Authority
EP
European Patent Office
Prior art keywords
clock signal
charge pump
voltage
clk
waveform generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP24725359.4A
Other languages
German (de)
French (fr)
Inventor
Edoardo Charbon
Halil Kerim YILDIRIM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique Federale de Lausanne EPFL
Original Assignee
Ecole Polytechnique Federale de Lausanne EPFL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale de Lausanne EPFL filed Critical Ecole Polytechnique Federale de Lausanne EPFL
Publication of EP4716992A1 publication Critical patent/EP4716992A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/02Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
    • H03K4/023Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform by repetitive charge or discharge of a capacitor, analogue generators
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073Charge pumps of the Schenkel-type
    • H02M3/077Charge pumps of the Schenkel-type with parallel connected charge pump stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03Astable circuits
    • H03K3/0315Ring oscillators
    • H03K3/0322Ring oscillators with differential cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

High voltage arbitrary waveform generator (1) comprising: - a voltage-controlled oscillator (3) arranged to output a clock signal (CLK) and an inverted clock signal (Formula (I)) at a frequency determined by at least one control voltage (Formula (II)); - a first charge pump (7) arranged to receive said clock signal (CLK) and said inverted clock signal (Formula (I)) and to increase an output voltage (Vout) at an output node (10) in response to said clock signal (CLK) and said inverted clock signal (Formula (I)); - a second charge pump (9) arranged to receive said clock signal (CLK) and said inverted clock signal (Formula (I)) and to decrease said output voltage (Vout) at said output node (10) in response to said clock signal (CLK) and said inverted clock signal (Formula (I)); - a selector adapted transmit said clock signal (CLK) and said inverted clock signal (Formula (I)) to either said first charge pump (7) or said second charge (9) pump at any given time in response to a select signal (Select); - a load (CL) connected between said output node (10) and ground.

Description

Description
HIGH VOLTAGE ARBITRARY WAVEFORM GENERATOR
Technical Field
[0001] The present invention relates to the field of waveform generation. More particularly, it relates to a high voltage arbitrary waveform generator based on a voltage-controlled oscillator and a charge pump. Potential uses for this waveform generator include frequency-modulated continuous wave (FMCW) LiDAR applications, ultrasound transducers, piezoactuators, neurostimulators, and many other devices.
State of the Art
[0002] Y. Ismail and C. -K. K. Yang, "A 12-V charge pump-based square wave driver in 65-nm CMOS technology," 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC), KaoHsiung, Taiwan, 2014, pp. 237-240, doi: 10.1109/ASSCC.2014.7008904 describes a high-voltage output stage producing square wave signals well beyond the voltage ratings of standard devices in a nanometer-scale CMOS technology.
[0003] H. -K. Cha, D. Zhao, J. H. Cheong, B. Guo, H. Yu and M. Je, "A CMOS High- Voltage Transmitter IC for Ultrasound Medical Imaging Applications," in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 60, no. 6, pp. 316-320, June 2013, doi: 10.1109/TCSI 1.2013.2258260 describes a device for providing over 10 Volt peak-to-peak pulses at 1.25 MHz frequency for ultrasound medical imaging applications.
[0004] However, neither of these systems, or ones similar thereto, are capable of generating arbitrary waveforms at high voltages, i.e. waveforms with any desired shape.
[0005] The aim of the present invention is hence to propose a high voltage arbitrary waveform generator which at least partially overcomes the limitations of the prior art.
Disclosure of the invention [0006] More specifically, the invention relates to a high voltage arbitrary waveform generator (AWG) as defined in claim 1. In the context of the invention, “high voltage” means a voltage greater than that of the supply voltage.
[0007] This AWG comprises:
[0008] - a voltage-controlled oscillator, i.e. an oscillator whose frequency can be varied by adjusting at least one control voltage, arranged to output a clock signal and an inverted clock signal at a frequency determined by at least one control voltage;
[0009] - a first charge pump arranged to receive said clock signal and said inverted clock signal and to increase an output voltage at an output node in response to said clock signal and said inverted clock signal;
[0010] - a second charge pump arranged to receive said clock signal and said inverted clock signal and to decrease said output voltage at said output node in response to said clock signal and said inverted clock signal;
[0011] - a selector adapted transmit said clock signal and said inverted clock signal to either said first charge pump or said second charge pump at any given time in response to a select signal;
[0012] - a load connected between said output node and ground (i.e. a ground voltage). This load can be any impedance driven by the AWG.
[0013] By varying the at least one control voltage of the voltage-controlled ring oscillator, the rate of output voltage ramp-up or ramp-down can be varied, the “select” signal determining which charge pump is active and hence whether the output voltage ramps up (if the first charge pump is receiving the clock signal and the inverted clock signal) or down (if the second charge pump is receiving the clock signal and the inverted clock signal). As a result, a wide variety of shapes of waveforms of output voltage can be generated by varying the rate of output voltage change with the at least one control voltage and whether this change is positive or negative by means of the “select” signal.
[0014] Furthermore, due to the use of charge pumps, the output voltage can be significantly higher than the supply voltage.
[0015] Advantageously, said voltage-controlled oscillator is a voltage-controlled ring oscillator, preferably a voltage-controlled differential ring oscillator, which may have any number of stages, such as four stages. [0016] Advantageously, at least one of said charge pumps is a Dickson charge pump, which is preferably the case for both of said charge pumps.
[0017] Advantageously, said first charge pump comprises 8-13, preferably 11, Dickson charge pump stages, and/or said second charge pump comprises 13-17, preferably 15, Dickson charge pump stages. Different numbers of stages are however possible, according to need. However, the number of stages can be freely determined in function of the desired maximum output voltage.
[0018] Advantageously, a discharge transistor arranged to discharge said second charge pump and controlled by said clock signal as transmitted to said second charge pump, a cascode transistor being arranged in series with said discharge transistor and biased by a cascode voltage. This arrangement enables high output voltages to be tolerated, and also permits fewer stages to be used for the second charge pump.
Brief description of the figures
[0019] Further details of the invention will appear more clearly upon reading the following description, in reference to the appended drawing in which:
- Figure 1 is a schematic representation of a high voltage arbitrary waveform generator according to the invention;
- Figure 2 is a schematic representation of an embodiment of a ring oscillator which can be used with the high voltage arbitrary waveform generator of figure 1;
- Figure 3 is a schematic representation of a unit cell of the ring oscillator of figure 2;
- Figure 4 is a schematic representation of an embodiment of a selector which can be used with the high voltage arbitrary waveform generator of figure 1;
- Figure 5 is a schematic partial representation of a first charge pump which can be used with the high voltage arbitrary waveform generator of figure 1;
- Figure 6 a schematic partial representation of a second charge pump which can be used with the high voltage arbitrary waveform generator of figure 1; - Figure 7 is a graph showing the principle of operation of the high voltage arbitrary waveform generator of figure 1;
- Figure 8 illustrates graphs showing various other waveforms generated by the high voltage arbitrary waveform generator of figure 1; and
- Figure 9 illustrates graphs showing the generation of a particular sawtooth waveform with the high voltage arbitrary waveform generator of figure 1.
Embodiments of the invention
[0020] Figure 1 illustrates schematically a high voltage arbitrary waveform generator 1 (abbreviated as “AWG”) according to the invention. In the context of the invention, and indeed in the context of such devices more generally, “high voltage” means capable of outputting a voltage which is greater than the supply voltage. Indeed, the AWG 1 described herein can be made in standard 130 nm SiGe BiCMOS technology and can output voltages of up to more than 20 Volts at a supply voltage of 3.3 Volts without suffering from breakdown.
[0021] AWG 1 comprises a voltage-controlled oscillator 3, whose frequency of oscillation can be controlled externally by means of at least one control voltage. In the present case, this oscillator 3 is a voltage-controlled ring oscillator 3, which has the control inputs Vctrl a~, Vctrl a+ and Vctrld<5,0>, which will be explained further in the context of figure 2. However, in essence, the inputs are as required for the particular type of oscillator used, in order to control its frequency.
[0022] Oscillator 3 outputs a clock signal CLK and its inverse CLK. These are fed to a selector 5 which passes them selectively to a first charge pump 7 and a second charge pump 9 of any convenient design, which have a common output node 10 with a voltage Vout which is also connected to a load (here illustrated as a load capacitor CL, but any type of circuit or device driven by the AWG 1 can also constitute the load) connected between output node 10 and ground. Selector 5 is controlled by an select input Select, which causes the signals CLK and CLK to be passed to either the first charge pump 7, in which case they are designated CLKcharge and CKLcharge respectively, or to the second charge pump 9, in which case they are designated CLKdischarge and CKLdlscharge respectively, however these are simply the signals CLK and CLK as passed selectively to one or other of the charge pumps 7, 9.
[0023] Selector 5 is arranged such that the signals CLK and CLK are transmitted exclusively to one or other of the charge pumps 7, 9, such that only one of these is active at any given time. First charge pump 7 is arranged to charge the load capacitor CL, and hence handles the rising part of the waveform of Vout, whereas second charge pump 9 is arranged to discharge the load capacitor CL, and hence handles the falling part of the waveform of Vout.
[0024] As a result, the state of the input Select determines whether Vout rises or falls, and due to the nature of charge pumps, the frequency of the signals CLK and CLK determines the rate of change of Vout, i.e. the rate of rise when first charge pump 7 is active, and the rate of fall when second charge pump 9 is active.
[0025] The two charge pumps 7, 9 hence operate in a complementary fashion, with ‘Select’ signal controlling whether the output voltage Vout increases or decreases. The clocks CLK and CLK are hence applied only to the charging/discharging charge pump 7, 9 during one half cycle, in which the output voltage rises/falls.
[0026] An optional discharge transistor Ila controlled by CLKdischarge, and cascoded by an optional cascode transistor 11 biased by a cascode voltage ^cascade’ is also introduced at Vdischarge, which is the final node in the second charge pump 9, so that a voltage up to 2VDD can be tolerated at this node. This final node can be connected to ground when CLKdischarge is also active, which allows decreasing the output voltage. This ensures that Vout can safely reach high voltages (such as 20 volts or higher in the case of a 130nm CMOS implementation) without reaching breakdown of the discharge transistors, given that the capacitors and NMOS-to-bulk isolation are within breakdown limits as well. Furthermore, this permits fewer stages to be used for the second charge pump 9 while reaching the same output voltage Vout. Alternatively, the final node in the second charge pump 9 can be grounded, in which case the output voltage would be further limited. [0027] The shape of the waveform of Vout can hence be widely varied, by operating Select to determine whether Vout rises or falls, and the control inputs to the ring oscillator 3 to vary the rate of change of Vout in a controlled manner, and thus to cause the voltage Vout to adopt any waveform shape required.
[0028] Figure 2 illustrates a particular embodiment of voltage-controlled ring oscillator 3, which is a classic 4-stage differential ring oscillator, outputting the signals CLK and CLK as described above. The unit cell of the four-stage ring oscillator is as illustrated in figure 3, and has six geometrically sized pairs of NMOS & PMOS loads to control the unit delay. The inputs, can be digitally switched to turn on a pair of NMOS & PMOS loads each, where Vctrl <5> corresponds to the load with the highest W/L ratio, Vctrid<4>’ aad ^ctrid<o> having decreasing W/L ratios, these ratios decreasing geometrically. Using digital inputs, gate voltage of the PMOS loads is connected to Vctrl a+ and the NMOS loads to Vctrt-a-, respectively. These two gate voltages are controlled differentially in an analog fashion, where their sum equals VDD, to fine tune the oscillation frequency. Operating at a supply of 1.2V, the frequency of the ring oscillator 3 outputs CLK and CLK can be set in the range of 6 MHz to 350 MHz, with a tuning control of 2% at lower frequencies and 0.5% at higher frequencies using 10 mV steps for Vctrl a+ and Vctrl a~. This type of ring oscillator is disclosed in J. Jalil, M. B. I. Reaz and M. A. M. Ali, "CMOS Differential Ring Oscillators: Review of the Performance of CMOS ROs in Communication Systems," in IEEE Microwave Magazine, vol. 14, no. 5, pp. 97-109, July-Aug. 2013, doi: 10.1109/MMM.2013.2259401, hereby incorporated by reference in its entirety.
[0029] Of course, other constructions of voltage-controlled oscillators 3 are possible including LC oscillators, single-ended ring oscillators, other differential ring oscillators Examples of such oscillators 3 which can be used in the context of the present invention are disclosed in:
- Wei-Hsuan Tu, Jyh-Yih Yeh, Hung-Chieh Tsai and Chorng-Kuang Wang, "A 1.8V 2.5-5.2 GHz CMOS dual-input two-stage ring VCO," Proceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits, Fukuoka, Japan, 2004, pp. 134-137, doi: 10.1109/APASIC.2004.1349429.
- C. Li and J. Lin, "A 1-9 GHz Linear-Wide-Tuning-Range Quadrature Ring Oscillator in 130 nm CMOS for Non-Contact Vital Sign Radar Application," in IEEE Microwave and Wireless Components Letters, vol. 20, no. 1, pp. 34- 36, Jan. 2010, doi: 10.1109/LMWC.2009.2035961.
- Chan-Hong Park and Beomsup Kim, "A low-noise, 900-MHz VCO in 0.6- /spl mu/m CMOS," in IEEE Journal of Solid-State Circuits, vol. 34, no. 5, pp. 586-591, May 1999, doi: 10.1109/4.760367.
- M. Grozing, B. Phillip and M. Berroth, "CMOS ring oscillator with quadrature outputs and 100 MHz to 3.5 GHz tuning range," ESSC/RC 2004
- 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705), Estoril, Portugal, 2003, pp. 679-682, doi: 10.1109/ESSCIRC.2003.1257226.
- A. Hajimiri, S. Limotyrakis and T. H. Lee, "Jitter and phase noise in ring oscillators," in IEEE Journal of Solid-State Circuits, vol. 34, no. 6, pp. 790- 804, June 1999, doi: 10.1109/4.766813.
- M. Moghavvemi and A. Attaran, "Performance Review of High-Quality- Factor, Low-Noise, and Wideband Radio-Frequency LC-VCO for Wireless Communication [Application Notes]," in IEEE Microwave Magazine, vol. 12, no. 4, pp. 130-146, June 2011, doi: 10.1109/MMM.2011.940602.
[0030] Figure 4 illustrates a particular embodiment of selector 5, which transfers the signals CLK and CLK to either the first charge pump 7 for augmenting Vout when the value of Select is 1, or to the second charge pump 9 to diminish Vout when the value of Select is 0. This is achieved by pairs of AND gates arranged in the illustrated fashion.
[0031] Figure 5 illustrates a particular embodiment of first charge pump 7, which is an 11-stage charge pump, of which only two and a half stages have been illustrated. This charge pump 7 comprises a plurality of Dickson charge pump stages, implemented with diode connected isolated thick oxide NMOS transistors and metal-insulator-metal (MiM) capacitors, driven by signals CLKcharge and CKLcharge. Other types of first charge pump 7 are of course possible including bootstrap, cross coupled, charge transfer switches, and suitable examples are given in:
- G. Palumbo and D. Pappalardo, "Charge Pump Circuits: An Overview on Design Strategies and Topologies," in IEEE Circuits and Systems Magazine, vol. 10, no. 1, pp. 31-45, First Quarter 2010, doi: 10.1109/MCAS.2009.935695.
- A. Umezawa et al, "A 5-V-only operation 0.6- mu m flash EEPROM with row decoder scheme in triple-well structure," in IEEE Journal of Solid-State Circuits, vol. 27, no. 11, pp. 1540-1546, Nov. 1992, doi: 10.1109/4.165334.
- R. Pelliconi, D. lezzi, A. Baroni, M. Pasotti and P. L. Rolandi, "Power efficient charge pump in deep submicron standard CMOS technology," Proceedings of the 27th European Solid-State Circuits Conference, Villach, Austria, 2001, pp. 73-76.
- Jieh-Tsorng Wu and Kuen-Long Chang, "MOS charge pumps for low- voltage operation," in IEEE Journal of Solid-State Circuits, vol. 33, no. 4, pp. 592-597, April 1998, doi: 10.1109/4.663564.
[0032] Figure 6 illustrates a particular embodiment of second charge pump 9, which is a 15-stage charge pump, of which only two stages have been illustrated. This again comprises a plurality of Dickson charge pump stages, implemented with three diode connected isolated thick oxide NMOS transistors and metal-insulator-metal (MiM) capacitors, driven by signals CLKdischarge and CKLdischarge- Other types of second charge pump 9 are of course possible, as mentioned above in the context of first charge pump 7.
[0033] The AWG 1 architecture described above can be implemented in an integrated form on a single chip using standard CMOS technology, while nevertheless permitting an output voltage Vout exceeding 20 volts.
[0034] Figure 7 illustrates the principles of waveform generation in the AWG 1 of the invention. The rise or fall time of a charge pump 7, 9 depends on the frequency of CLK, therefore enabling one to tune the time-domain waveform by changing the clock frequency at pre-determined time points, as can be seen at the inflection point in Vout, caused by the change of frequency in the signal CLK. By setting the digital control of the ring oscillator 3 by leans of input Vctrl <2>, the frequency of CLK is adjusted, from approximately 43.5 MHz before the inflection point to 90.9 MHz after the inflection point, thus decreasing the waveform rise time. ‘Select’ signal is switched to start the falling edge and the fall time is controlled in the same manner using the oscillator inputs, thus enabling arbitrary waveform generation up to more than 20V. The generated output Vout is a continuous waveform with a period equal to the period of ‘Select’, whose duty cycle also sets the highest and lowest output voltage Vout values.
[0035] By operating the circuit with different oscillator control input sequences, waveforms with different shapes, amplitudes, frequencies and offset values can be produced, such as those illustrated by way of example in figure 8. For the measurements presented here, Vout was fed to an external unity-gain voltage buffer whose output was measured. Load capacitance at chip output was measured at 26 pF. Vin and Vcascode were biased at VDD = 3.3V. Voltage steps of the output waveform were measured as ~5 mV, which corresponds to one clock cycle of the charge pump 7, 9.
[0036] Figure 9 shows the relationship between the various control input voltages and Vout, in order to generate a specific sawtooth wave profile useful for controlling the vernier laser of a FMCW LiDAR system. However, the AWG 1 of the invention can also be used to control ultrasound transducers, piezoactuators, neurostimulators, and many other devices.
[0037] Although the invention has been described in reference to specific embodiments, variations thereto are possible without departing from the scope of protection of the appended claims.

Claims

Claims
1. High voltage arbitrary waveform generator (1) comprising:
- a voltage-controlled oscillator (3) arranged to output a clock signal CLK and an inverted clock signal (CLK) at a frequency determined by at least one control voltage
- a first charge pump (7) arranged to receive said clock signal CLK and said inverted clock signal (CLK) and to increase an output voltage at an output node (10) in response to said clock signal CLK and said inverted clock signal
- a second charge pump (9) arranged to receive said clock signal CLK and said inverted clock signal (CLK) and to decrease said output voltage at said output node (10) in response to said clock signal CLK and said inverted clock signal
- a selector adapted transmit said clock signal CLK and said inverted clock signal (CLK) to either said first charge pump (7) or said second charge (9) pump at any given time in response to a select signal Select)
- a load connected between said output node (10) and ground.
2. High voltage arbitrary waveform generator (1) according to claim 1, wherein said voltage-controlled oscillator (3) is a voltage-controlled ring oscillator, preferably a voltage-controlled differential ring oscillator, further preferably a voltage-controlled differential ring oscillator with four stages.
3. High voltage arbitrary waveform generator (1) according to any preceding claim, wherein at least one of said charge pumps (7, 9) is a Dickson charge pump.
4. High voltage arbitrary waveform generator (1) according to the preceding claim, wherein said first charge pump (7) comprises between 8 and 13 Dickson charge pump stages, preferably 11 Dickson charge pump stages.
5. High voltage arbitrary waveform generator (1) according claim 3 or 4, wherein said second charge pump (9) comprises between 13 and 17 Dickson charge pump stages, preferably 15 Dickson charge pump stages.
6. High voltage arbitrary waveform generator (1) according to any preceding claim, further comprising a discharge transistor (Ila) arranged to discharge said second charge pump (9) and controlled by said clock signal CLK) as transmitted to said second charge pump (9), a cascode transistor (11) being arranged in series with said discharge transistor (Ila) and biased by a cascode voltage
EP24725359.4A 2023-05-22 2024-05-14 High voltage arbitrary waveform generator Pending EP4716992A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP23174433.5A EP4468604A1 (en) 2023-05-22 2023-05-22 High voltage arbitrary waveform generator
PCT/EP2024/063238 WO2024240541A1 (en) 2023-05-22 2024-05-14 High voltage arbitrary waveform generator

Publications (1)

Publication Number Publication Date
EP4716992A1 true EP4716992A1 (en) 2026-04-01

Family

ID=86498000

Family Applications (2)

Application Number Title Priority Date Filing Date
EP23174433.5A Withdrawn EP4468604A1 (en) 2023-05-22 2023-05-22 High voltage arbitrary waveform generator
EP24725359.4A Pending EP4716992A1 (en) 2023-05-22 2024-05-14 High voltage arbitrary waveform generator

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP23174433.5A Withdrawn EP4468604A1 (en) 2023-05-22 2023-05-22 High voltage arbitrary waveform generator

Country Status (2)

Country Link
EP (2) EP4468604A1 (en)
WO (1) WO2024240541A1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4392406A (en) * 1981-06-22 1983-07-12 Kimball International, Inc. Switched capacitor sine wave generator and keyer

Also Published As

Publication number Publication date
EP4468604A1 (en) 2024-11-27
WO2024240541A1 (en) 2024-11-28

Similar Documents

Publication Publication Date Title
US8076986B2 (en) Switching capacitor generation circuit
US7679430B2 (en) Low voltage charge pump
US7911282B2 (en) Voltage-controlled oscillator including plurality of delay cells
CN107040255B (en) System and method for switchable capacitance
EP1049256A1 (en) Low supply voltage oscillator circuit, particularly of the CMOS type
US8633618B2 (en) Semiconductor device and radio communication device
KR100399693B1 (en) Charge pump circuit
CN101399519A (en) Digitally controlled capacitor circuit and high resolution digitally controlled oscillator and method therefor
EP3477860B1 (en) Comparator and relaxation oscillator
US9197222B2 (en) Method and apparatus of a resonant oscillator separately driving two independent functions
US6184594B1 (en) Multi-stage charge pump having high-voltage pump control feedback and method of operating same
US20120212281A1 (en) Level shifter
US11973480B2 (en) Variable capacitance circuit and wireless communication device
JP3513501B2 (en) Charge pump circuit
CN108781070B (en) Variable Frequency RC Oscillator
EP4468604A1 (en) High voltage arbitrary waveform generator
JP2015139206A (en) Duty ratio correction circuit and phase synchronization circuit
Hong et al. Low operating voltage and short settling time CMOS charge pump for MEMS applications
US6628175B1 (en) Voltage-controlled crystal oscillator (VCXO) using MOS varactors coupled to an adjustable frequency-tuning voltage
US7176732B2 (en) Device and method for increasing the operating range of an electrical circuit
CN102931983B (en) Delay element and digitally controlled oscillator
JP7383590B2 (en) switch circuit
JP2010028244A (en) Hysteresis comparator circuit and delay circuit using the same
US7187243B2 (en) Delay circuit
Cheng et al. A 2GHz fully differential DLL-based frequency multiplier for high speed serial link circuit

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20251218

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC ME MK MT NL NO PL PT RO RS SE SI SK SM TR