Classifications

• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09G—POLISHING COMPOSITIONS; SKI WAXES
  • C09G1/00—Polishing compositions
  • C09G1/02—Polishing compositions containing abrasives or grinding agents
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K3/00—Materials not provided for elsewhere
  • C09K3/14—Anti-slip materials; Abrasives
  • C09K3/1436—Composite particles, e.g. coated particles
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
  • C09K3/00—Materials not provided for elsewhere
  • C09K3/14—Anti-slip materials; Abrasives
  • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
  • C09K3/1463—Aqueous liquid suspensions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
  • H10P95/06—Planarisation of inorganic insulating materials
  • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Definitions

• This invention relates to the STI CMP chemical polishing compositions and chemical mechanical planarization (CMP) for Shallow Trench Isolation (STI) process.
• polishing especially surfaces for chemical-mechanical polishing for the purpose of recovering a selected material and/or planarizing the structure.
• a SiN layer is deposited under a SiC>2 layer to serve as a polish stop.
• the role of such polish stop is particularly important in Shallow Trench Isolation (STI) structures.
• Selectivity is characteristically expressed as the ratio of the oxide polish rate to the nitride polish rate.
• An example is an increased polishing selectivity ratio of silicon dioxide (SiCh) as compared to silicon nitride (SiN).
• SiN selectivity and reduce erosions on various density features of the polished STI patterned wafers become more important to increase the chip fabrication yields.
• a published US patent application 2020/0048551 A1 disclosed polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 milli Siemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.
• a published US patent application 2020/0071566 A1 disclosed a slurry composition for a chemical mechanical polishing (CMP) process includes about 0.1 % by eight to about 10 % by weight of polishing particles , about 0.001 % by weight to about 1 % by weight of an amine compound , about 0.001 % by weight to about 1 % by weight of a first cationic compound that is amino acid, about 0.001 % by weight to about 1 % by weight of a second cationic compound that is organic acid, and about 1 % by weight to about 5 % by weight of polyhydric alcohol including at least two hydroxyl groups.
• CMP chemical mechanical polishing
• a published US patent application 2021/0130651 A1 disclosed the chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition.
• the CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.
• a published US patent applications 2020/0002607 A1 and 2020/0002608 A1 disclosed the Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve overpolishing window stability.
• CMP Chemical mechanical planarization
• High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided.
• compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D- sorbitol, mannitol, dulcitol, iditol, D-(-)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, betalactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
• STI Shallow Trench Isolation
• Ri and R2 can be the same or different atoms or functional groups. They can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein at least one of R1 and R2 is hydrogen, hydrogen.
• R can be selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, organic amine groups, and combinations thereof.
• the chemical additive bears one organic carboxylic groups and at least two hydroxyl functional groups.
• all R, R1 and R2 are hydrogen.
• the chemical additives having two carboxylic acid group and at least two hydroxyl groups on the same molecules have a general molecular structure including but are not limited to the group comprising (e), (f), (g), (h), (i) and (j) as shown below:
• n is selected from 1 to 5,000, 1 to 200, or 1 to 20, the preferred n is from 2 to 12, the more preferred n is from 3 to 6.
• Ri and R2 can be the same or different atoms or functional groups. They can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein at least one of R1 and R2 is hydrogen.
• the chemical additive bears two organic carboxylic groups and at least two hydroxyl functional groups.
• R1 and R2 are hydrogen.
• six member ring can contain (1 )_all carbon to carbon single bonds on the ring, and with two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring; or (2) one carbon to carbon double bonds or two carbon to carbon double bonds or as an aromatic ring with conjugated bonds, and two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring.
• six member ring can contain (1) four carbon to carbon single bonds and with R 4 as an oxygen atom, a nitrogen atom or -NH- group to form two carbon to oxygen single bonds or carbon to nitrogen bonds in six member ring, and with two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring; or (2) one carbon to carbon double bonds or two carbon to carbon double bonds, or with the conjugated chemical bonds on six member ring and with two carboxylic acid groups and at least two hydroxyl groups directly bonded to 6 member ring.
• n is selected from 1 to 5,000, 1 to 200, or 1 to 20, the preferred n is from 2 to 12, the more preferred n is from 3 to 6.
• Ri and R2 can be the same or different and each is independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein at least one of R1 and R2 is hydrogen.
• R can be selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, organic amine groups, and combinations thereof.
• the chemical additive bears one organic carboxylic groups and at least two hydroxyl functional groups.
• all R, R1 and R2 are hydrogen.
• six member ring can contain (1) all carbon to carbon single bonds, and one carboxylic acid and at least two hydroxyl groups directly bonded to six member ring; or (2)one carbon to carbon double bonds or two carbon to carbon double bonds or as an aromatic ring with conjugated bonds, and one carboxylic acid and at least two hydroxyl groups directly are bonded to six member ring.
• six member ring can contain (1) four carbon to carbon single bonds and with R3 as an oxygen atom to form two carbon to oxygen single bonds in six member ring, and with one carboxylic acid and at least two hydroxyl groups directly bonded to six member ring; or (2) one carbon to carbon double bonds or two carbon to carbon double bonds, and one carboxylic acid and at least two hydroxyl groups directly bonded to six member ring.
• Ri and R2 can be the same or different atoms or functional groups. They can be independently selected from the group consisting of hydrogen, alkyl, alkoxy, organic group with one hydroxyl groups, substituted organic sulfonic acid, substituted organic sulfonic acid salt, substituted organic carboxylic acid, substituted organic carboxylic acid salt, organic carboxylic ester, organic amine groups, and combinations thereof; wherein at least one of R1 and R2 is hydrogen.
• the chemical additive bears two organic carboxylic groups and at least two hydroxyl functional groups.
• R1 and R2 are hydrogen.
• six member ring can contain (1) all carbon to carbon single bonds on the ring, and two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring; or (2) one carbon to carbon double bonds or two carbon to carbon double bonds or as an aromatic ring with conjugated bonds, and two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring.
• six member ring can contain (1) four carbon to carbon single bonds, R4 can be an oxygen atom, a nitrogen atom or -NH- group to form two carbon to oxygen single bonds or carbon to nitrogen bonds in six member ring, and two carboxylic acid groups and at least two hydroxyl groups directly bonded to six member ring; or (2) one carbon to carbon double bonds or two carbon to carbon double bonds or with the conjugated chemical bonds on six member ring, and two carboxylic acid groups and at least two hydroxyl groups directly bonded to 6 member ring.
• R 5 can be an oxygen atom, and two carboxylic acid groups and two hydroxyl groups are directly bonded to five member ring.
• R 6 can be an alkyl group connecting to an aromatic ring and to an amino alkyl dicarboxylic acid group
• R 7 and Rs can be the same or different and each is an alkyl groups as -(C 2 H4-)n-with n ranging from 1 to 6, and two hydroxyl groups are directly bonded to the six member ring.
• R9 and R10 can be the same or different and each is an alkyl group, such as -(C2H4-)n- with n ranging from 1 to 6, the at least two hydroxyl groups are directly bonded to the aromatic benzene ring.
• the STI CMP composition contains 0.0001 wt.% to 2.0% wt.%, 0.0002 wt.% to 1.0 wt.%, 0.0005 wt.% to 0.5 wt.%, or 0.0025 wt.% to 0.015 wt.% of the chemical additive-as SiN film removal rate suppressing agents and low-density feature erosion reduction agents.
• the water-soluble solvent includes but is not limited to deionized (DI) water, distilled water, and alcoholic organic solvents.
• the preferred water-soluble solvent is DI water.
• the STI CMP composition may contain biocide from 0.0001 wt.% to 0.05 wt.%; preferably from 0.0005 wt.% to 0.025 wt.%, and more preferably from 0.001 wt.% to 0.01 wt.%.
• the biocide includes, but is not limited to, KathonTM, KathonTM CG/ICP II, from Dupont/Dow Chemical Co. Bioban from Dupont/Dow Chemical Co. They have active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, 2-n- Octyl-4-isothiazolin-3-one.
• the STI CMP composition may contain a pH adjusting agent.
• An acidic or neutral or basic pH adjusting agent can be used to adjust the STI polishing compositions to the optimized pH value.
• the pH adjusting agents include, but are not limited to nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof to adjust pH towards the more acidic direction.
• pH adjusting agents also include the basic pH adjusting agents, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and other chemical reagents that can be used to adjust pH towards the more alkaline direction.
• basic pH adjusting agents such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and other chemical reagents that can be used to adjust pH towards the more alkaline direction.
• the STI CMP composition contains 0 wt.% to 1 wt.%; preferably 0.01 wt.% to 0.5 wt.%; more preferably 0.1 wt.% to 0.25 wt.% pH adjusting agent.
• CMP chemical mechanical polishing
• CMP chemical mechanical polishing
• the polished oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on oxide films.
• CVD Chemical vapor deposition
• PECVD Plasma Enhance CVD
• HDP High Density Deposition
• spin on oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on oxide films.
• the substrate disclosed above can further comprises a silicon nitride surface.
• the removal selectivity of SiO 2 : SiN is greater than 70, 80, or 90.
• CMP chemical mechanical polishing
• STI Shallow Trench Isolation
• Ceria-coated Silica used as abrasive having a mean particle size of approximately 120 nanometers (nm).
• Ceria-coated Silica particles (with varied sizes) were supplied by JGC Inc. in Japan and were made by methods described in JP2013119131 and JP2013133255; WO 2016/159167; JP patent applications JP2015-169967; and J P2015- 183942.
• TEOS tetraethyl orthosilicate
• Polishing Pad Polishing pad, IC1010 and other pads were used during
• a or A angstrom(s) - a unit of length
• BP back pressure, in psi units
• CS carrier speed
• DF Down force: pressure applied during CMP, unit: psi
• PS platen rotational speed of polishing tool, in rpm (revolution(s) per minute)
• Wt. % weight percentage (of a listed component)
• TEOS SiN Selectivity: (removal rate of TEOS)/ (removal rate of SiN)
• HDP high density plasma deposited TEOS
• TEOS or HDP Removal Rates Measured TEOS or HDP removal rate at a given down pressure.
• the down pressure of the CMP tool was 2.0, 3.0 or 4.0 psi in the examples listed above.
• SiN Removal Rates Measured SiN removal rate at a given down pressure.
• the down pressure of the CMP tool was 3.0 psi in the examples listed.
• the CMP tool that was used is a 200mm Mirra, or 300mm Reflexion manufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara, California, 95054.
• An IC1000 pad supplied by DOW, Inc, 451 Bellevue Rd., Newark, DE 19713 was used on platen 1 for blanket and pattern wafer studies.
• the IC1010 pad or other pad was broken in by conditioning the pad for 18 mins. At 7 lbs. down force on the conditioner. To qualify the tool settings and the pad break-in four TEOS monitors were polished with Versum® STI2305 composition, supplied by Versum Materials Inc. at baseline conditions.
• Polishing experiments were conducted using PECVD or LECVD or HD TEOS wafers, and SiN wafers, the patterned wafer are MIT864 oxide patterned wafer. These blanket and patterned wafers were purchased from Silicon Valley Microelectronics, 2985 Kifer Rd., Santa Clara, CA 95051.
• TEOS SiN Selectivity ratio: (removal rate of TEOS)/ (removal rate of SiN) obtained from the STI CMP polishing compositions were tunable.
• Example 1 STI polishing references 1 and 3( Ref. 1 and Ref. 3) compositions were prepared using 0.2 wt.% ceria-coated silica, 0.00039 wt.% Bioban 425 as biocide, 0.8 millimolar (mM) maltitol (or 0.28 wt.%) or 0.8 mM D-sorbitol (or 0.15 wt.%) as the non-ionic organic alcohol compound (alcohol) and deionized water at pH 7, respectively.
• Ref. 2 was prepared by adding 0.024 mM Adipic Acid (not a claimed chemical additive) to Ref. 1. 0.024 mM different chemical additives were added to Ref. 1 to obtain working examples Comp 1 to 6. The concentration of the non-ionic organic alcohol alcohols and the chemical additives was in mV for better comparison purpose.
• adipic acid is not a disclosed chemical additive. It was just used as reference. Adipic acid structure is similar to mucic acid but has no hydroxyl group. The composition with adipic acid reduced nitride removal rate and improved the selectivity of SiC>2 vs SiN, however, the composition had the worse P200 Trench Loss Rate (A/min.) and the worst ratio of P200 Trench Loss Rate (A /min.) to blanket removal rate.
• the chemical additive without having at least one or at least two carboxylic functional groups, and at least two hydroxyl groups on the same molecule cannot improve P200 Trench Loss Rate (A/min.) and the ratio of P200 Trench Loss Rate (A /min.) to blanket removal rate.
• Example 2 all polishing compositions used 0.2 wt.% ceria-coated silica, 0.00039 wt.% Bioban 425 as biocide, and deionized water.
• the CMP polishing compositions in Table 2 were prepared with (1) fixed concentrations of non-ionic organic alcohol compound (alcohol) and chemical additives but at various pH; fixed non-ionic organic alcohol compound (alcohol) concentration and various concentrations of chemical additives at fixed pH; or fixed chemical additives concentration and various concentrations of non-ionic organic alcohol compound (alcohol) at fixed pH.

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• Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Composite Materials (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

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• 2024
  • 2024-01-30 WO PCT/US2024/013474 patent/WO2024173029A1/en not_active Ceased
  • 2024-01-30 CN CN202480012548.XA patent/CN120752317A/zh active Pending
  • 2024-01-30 EP EP24757417.1A patent/EP4665809A1/de active Pending
  • 2024-01-30 KR KR1020257030855A patent/KR20250150100A/ko active Pending
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