EP4405897A1 - Procede de caracterisation d'un reseau a analyser comportant des motifs périodiques - Google Patents
Procede de caracterisation d'un reseau a analyser comportant des motifs périodiquesInfo
- Publication number
- EP4405897A1 EP4405897A1 EP22786797.5A EP22786797A EP4405897A1 EP 4405897 A1 EP4405897 A1 EP 4405897A1 EP 22786797 A EP22786797 A EP 22786797A EP 4405897 A1 EP4405897 A1 EP 4405897A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- series
- pattern
- patterns
- correlation coefficient
- analyzed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/60—Analysis of geometric attributes
- G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/40—Imaging
- G01N2223/401—Imaging image processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/20—Special algorithmic details
- G06T2207/20072—Graph-based image processing
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
Definitions
- the invention relates to the technical field of the characterization (dimensional analysis) of a network of periodic patterns by image processing.
- the invention finds its application in particular when the periodic patterns are nanostructures, such as nanowires formed by epitaxy.
- the defects of nanostructures can be linked to their epitaxial growth on a substrate (e.g. a wafer or "wafer” in English), or to other technological steps which are applied to them, and which lead in particular to size inhomogeneities for the nanowires.
- a substrate e.g. a wafer or "wafer” in English
- the person skilled in the art seeks to identify the nanostructures presenting morphological defects (size, geometry), and to have a quantitative feedback on the quality of the epitaxies in order to determine if the nanowires of the substrate are of sufficient quality to undergo technological steps. additions of an industrial process in production mode.
- Such a state-of-the-art method whose approach is based on a threshold, is not entirely satisfactory for detecting defects on nanostructures.
- the nanostructures present a dispersion in particular in size, shape, contrast, luminosity, which makes extremely complex the precise determination of a threshold allowing a reliable detection of defects.
- such a process of the state of the art is likely to wrongly consider that nanostructures do not contain defects, or to wrongly consider that nanostructures contain defects.
- the subject of the invention is a method for characterizing a grating to be analyzed comprising periodic patterns, the method comprising the steps: a) provide a digital image of a reference grating, showing a reference series of periodic patterns; b) defining a reference pattern from the patterns of the reference series; c) providing first and second digital images of the grating to be analyzed, taken from a scanning electron microscope, showing respectively first and second series of periodic patterns, the first and second digital images being respectively obtained from backscattered electrons and from secondary electrons; d) calculating a correlation coefficient between each pattern of the first and second series and the reference pattern; e) extracting a characteristic dimension for each pattern of the first and second series whose correlation coefficient, in absolute value, is greater than a predetermined threshold.
- peripheral patterns are meant patterns spaced according to a regular interval of distance (spatial period). In a perfect lattice, the periodic patterns reproduce identically. In practice, the expression “identical” means within the usual tolerances linked to the experimental conditions of manufacture, and not in the literal sense of the term.
- plan means to use.
- reference grating is meant a grating whose periodic patterns have previously known geometric characteristics (e.g. by measurements), and satisfying given industrial specifications.
- reference pattern is meant a pattern having previously known geometric characteristics (e.g. by measurements) and which satisfy given industrial specifications.
- backscattered electrons we mean the electrons from the incident beam of the scanning electron microscope which have collided (elastic or quasi-elastic shock) with the atoms of the lattice to be analyzed.
- secondary electrons we mean the electrons emitted by the atoms of the lattice to be analyzed (ionization process), following the inelastic interaction with the incident beam.
- characteristic dimension we mean a specific dimension (spatial extent) allowing a distinction between the patterns of the first series (and between the patterns of the second series) of which each correlation coefficient, in absolute value, is greater than the threshold predetermined.
- the second digital image benefits from a high contrast during a variation of the surface topography within the lattice, this contrast being linked to the properties of the secondary electrons (low kinetic energy, emitted from the outer atomic layers). Characteristic dimensions, exploiting this high contrast, can therefore be extracted precisely for the motifs of the second series.
- Such a method according to the invention therefore makes it possible to greatly limit detection errors wrongly establishing that nanostructures do not contain defects linked to size inhomogeneities.
- This double dimensional analysis makes it possible to specify the nature of the defects detected, and to facilitate the determination of the origin of these defects, by distinguishing for example the influence of epitaxy and the influence of other technological steps in the case of a network of epitaxial nanowires, in order to improve the homogeneity and the reproducibility of the periodic patterns.
- the invention also relates to a method for characterizing a set of gratings to be analyzed each comprising periodic patterns, the method comprising the steps: a) providing a digital image of a reference grating, showing a reference series of periodic patterns; b) defining a reference pattern from the patterns of the reference series; (c) provide:
- Such a method according to the invention has the same advantages as those mentioned above.
- An additional advantage is to be able to iterate the double dimensional analysis for each network of the set before engaging additional technological steps of an industrial process in production mode.
- the method according to the invention may comprise one or more of the following characteristics.
- step e) comprises the steps: ei) performing a cutting line for each pattern of the first and second series whose correlation coefficient, in absolute value, is greater than the predetermined threshold; ez) extract the feature dimension from the section line.
- an advantage obtained is to be able to easily measure the characteristic dimension from an image processing operation.
- the network to be analyzed comprises nanowires, forming periodic patterns, and each having:
- transverse we mean a section that cuts perpendicularly to the longitudinal axis of the nanowires.
- the longitudinal axis is the axis extending along the height of the nanowires.
- step e) consists in extracting:
- first and second characteristic dimensions for each pattern of the first series whose correlation coefficient, in absolute value, is greater than the predetermined threshold
- - first and second characteristic dimensions for each pattern of the second series whose correlation coefficient, in absolute value, is greater than the predetermined threshold
- the first characteristic dimensions extracted for each pattern of the first and second series are representative of the height
- the second characteristic dimensions extracted for each pattern of the first and second series are representative of the diameter.
- an advantage obtained is to combine the contrasts of the first and second digital images to precisely measure the height from the first characteristic dimensions extracted for each pattern of the first and second series.
- an advantage obtained is to combine the contrasts of the first and second digital images to precisely measure the diameter from the second characteristic dimensions extracted for each pattern of the first and second series.
- step c) comprises a step ci) consisting in acquiring the first and second digital images so as to:
- step c) comprises a step ci) consisting in acquiring the first and second digital images so that the first and second acquired digital images:
- an advantage obtained is to improve the reliability of the extraction of the characteristic dimensions.
- step ci) comprises a step consisting in providing a support comprising a flat surface intended to receive the grating to be analyzed, the flat surface being defined by first and second directions; the support being movable in rotation around a vertical axis and around the first and second directions.
- the flat surface extends in a plane defined by first and second perpendicular directions.
- vertical axis is meant an axis of rotation extending in a direction parallel to the direction of gravity given in particular by the plumb line.
- the vertical axis of rotation is defined in absolute terms, it is not a direction perpendicular to the first and second directions, except when the support is horizontal.
- the scanning electron microscope has an optical axis. The support is rotatable around the vertical axis of rotation coinciding with the optical axis of the scanning electron microscope.
- an advantage obtained is to be able to control the position of the patterns of the grating to be analyzed with respect to the position of the means of acquisition of the first and second digital images, so that the first and second digital images can:
- step e) comprises the steps: e′i) performing:
- step e) includes the steps: e'i) perform:
- the first cutting line is made along a vertical axis of the first and second digital images.
- the vertical axis of the first and second digital images depends in particular on the inclination of the support with the vertical axis of rotation of the support.
- the optical axis of the scanning electron microscope coincides with the vertical axis of rotation of the support.
- an advantage obtained is to combine the contrasts of the first and second digital images to precisely measure their height from the first cutting lines.
- an advantage obtained is to combine the contrasts of the first and second digital images to precisely measure their diameter from the second cutting lines.
- step b) consists in selecting a pattern from among the patterns of the reference series, the selected pattern defining the reference pattern.
- an advantage obtained is to authorize a manual selection of the reference pattern.
- step b) comprises the steps: bi) selecting an initial pattern from among the patterns of the reference series; b 2 ) calculating a correlation coefficient between each pattern of the reference series and the initial pattern; b 3 ) identifying the patterns of the reference series whose correlation coefficients, in absolute value, are greater than a predetermined threshold; b ⁇ define the reference pattern from a combination of the patterns of the reference series identified during step b 3 ).
- an advantage obtained is to improve the reliability and the representativeness of the reference pattern.
- the reference pattern is defined during step b) by performing an average of the patterns of the reference series.
- the digital image of the reference network provided during step a) and the first and second digital images of the network to be analyzed provided during step c) each comprise a set of pixels, each pixel having an intensity; the correlation coefficient is calculated during step d) between the intensity of the pixels of each pattern of the first and second series and the intensity of the pixels of the reference pattern.
- the correlation coefficient is calculated during step d) according to the Bravais-Pearson formula.
- step d is followed by a step d') consisting in counting a total number of patterns of the first and second series whose correlation coefficient, in absolute value, is greater than the predetermined threshold;
- step e) is executed if the total number of patterns is greater than a predetermined value.
- step d is followed by a step d') consisting in counting a total number of patterns of the first and second series whose correlation coefficient, in absolute value, is greater than the predetermined threshold; step d') being executed before step e);
- step e) is executed if the total number of patterns is greater than a predetermined value.
- an advantage obtained is to guarantee a minimum number of patterns to be analyzed during step e) to obtain a reliable and representative dimensional analysis from a statistical point of view.
- the method comprises a step f) consisting in generating a histogram of the characteristic dimensions extracted during step e).
- Figure 1 is a flowchart schematically representing a method according to the invention.
- Figure 2 is a flowchart schematically representing a method according to the invention, illustrating in particular an iteration of steps d) and e) in the case of a set of networks to be analyzed.
- FIG. 3 is a flowchart schematically representing a method according to the invention, illustrating in particular steps ei) and e 2 ).
- Figure 4 is a flowchart schematically representing a method according to the invention, illustrating in particular step ci).
- Figure 5 is a flowchart schematically representing a method according to the invention, illustrating in particular steps e′i) and e′ 2 ).
- Figure 6 is a flowchart schematically representing a method according to the invention, illustrating in particular steps bi) to b ⁇ .
- Figure 7 is a flowchart schematically representing a method according to the invention, illustrating in particular the step of).
- Figure 8 is a flowchart schematically representing a method according to the invention, illustrating in particular step f).
- Figure 9 is a schematic top view illustrating (on the left) partially patterns of a grating to be analyzed, and illustrating (on the right) the position of a support intended to receive the grating to be analyzed.
- Figure 10 is a schematic perspective view illustrating (on the left) partially patterns of a grating to be analyzed, and illustrating (on the right) the position of a support intended to receive the grating to be analyzed, the support having undergone a rotation around of a horizontal axis with respect to figure 9.
- Figure 11 is a schematic perspective view illustrating (on the left) partially patterns of a grating to be analyzed, and illustrating (on the right) the position of a support intended to receive the grating to be analyzed, the support having undergone a rotation around of a vertical axis with respect to figure 10.
- Figure 12 is a schematic perspective view illustrating (on the left) a nanowire present on an image obtained from backscattered electrons, and illustrating (on the right) a vertical section line.
- Figure 13 is a schematic perspective view illustrating (on the left) a nanowire present on an image obtained from secondary electrons, and illustrating (on the right) a vertical section line.
- FIG. 14 is a schematic perspective view illustrating (on the left) a nanowire, having a so-called necklace morphology, present on an image obtained from backscattered electrons, and illustrating (on the right) a vertical section line.
- Figure 15 is a schematic perspective view illustrating (on the left) a nanowire with a so-called necklace morphology, present on an image obtained from secondary electrons, and illustrating (on the right) a vertical section line.
- an object of the invention is a method for characterizing a grating to be analyzed 1 comprising periodic patterns 10, the method comprising the steps: a) providing a digital image of a reference grating, showing a reference series of periodic patterns; b) defining a reference pattern from the patterns of the reference series; c) providing first and second digital images of the grating 1 to be analyzed, taken from a scanning electron microscope, showing respectively first and second series of periodic patterns, the first and second digital images being respectively obtained from electrons backscattered and from secondary electrons; d) calculating a correlation coefficient between each pattern 10 of the first and second series and the reference pattern; e) extracting a characteristic dimension for each pattern 10 of the first and second series whose correlation coefficient, in absolute value, is greater than a predetermined threshold.
- the digital image of the reference grating, provided during step a) comprises a set of pixels, each pixel possessing an intensity.
- the digital image of the reference network, provided during step a) can have a TIFF format (“Tag image File Format” in English).
- the digital image of the reference network may be in grayscale.
- Step b) may consist of selecting a pattern from among the patterns of the reference series, the selected pattern defining the reference pattern.
- the reference pattern can be selected by a user via a graphical interface GUI (“Graphical User Interface” in English) having a selection window, for example square.
- the selection window can have a reframing function (“crop” in English).
- step b) can include the steps: bi) selecting an initial pattern from among the patterns of the reference series; b 2 ) calculating a correlation coefficient between each pattern of the reference series and the initial pattern; b 3 ) identifying the patterns of the reference series whose correlation coefficients, in absolute value, are greater than a predetermined threshold; b ⁇ define the reference pattern from a combination of the patterns of the reference series identified during step b 3 ).
- Step bi) is implemented by the user but steps b 2 ) to b ⁇ are advantageously implemented by a computer.
- the initial pattern selected during step bi) by the user must be representative of a reference pattern.
- the patterns of the reference series, identified during step b 3 ), can represent between 0.5% and 1% of the total number of patterns of the reference series.
- the reference pattern is defined during step b) by performing an average of the patterns of the reference series.
- Step b) can then consist in defining the reference pattern from an average of the intensities of the pixels of the reference series of periodic patterns of the digital images of reference networks.
- the first and second digital images of the network to be analyzed 1, provided during step c), can have a TIFF format (“Tag image File Format” in English).
- the first and second digital images of the network to be analyzed 1 can be in gray levels.
- the network 1 to be analyzed can comprise nanowires, forming periodic patterns, and each having:
- step c) advantageously comprises a step ci) consisting in acquiring the first and second digital images so as to:
- Step ci) is advantageously implemented by a computer.
- step ci) advantageously comprises a step consisting in providing a support 2 comprising a flat surface intended to receive the network 1 to be analyzed, the flat surface being defined by first and second directions; the support 2 being rotatable around a vertical axis and around the first and second directions.
- Step d) is advantageously implemented by a computer.
- the correlation coefficient is advantageously calculated during step d) between the intensity of the pixels of each pattern 10 of the first and second series and the intensity of the pixels of the reference pattern.
- the correlation coefficient is advantageously calculated during step d) according to the Bravais-Pearson formula, known to those skilled in the art.
- the correlation between the reference pattern and each point of the digital image of the network to be analyzed 1 is carried out by an image correlation function.
- This image correlation function will compare the reference pattern, T(x t , y t ), where (x t , y t ) represents the coordinates of each pixel of the reference pattern to the image of the network to be analyzed 1 , S(x, y), where (x, y) represents the coordinates of each pixel of the image of the network to be analyzed 1.
- the image correlation function consists in calculating the sum of the products of the coefficients of S(x , y) and T(x t , y t ) for all the positions of the reference pattern with respect to the image of the grating to be analyzed 1. It is then possible to renormalize the sum of the products of the coefficients of S(x, y ) and T(x t , y t ) to obtain a result between -1 and 1. "-1" indicates an anti-correlation, "0" an absence of correlation and "1" a perfect correlation.
- This correlation coefficient corresponds to a linear Bravais-Pearson correlation coefficient, denoted r, between two real random variables X and Y.
- the linear Bravais-Pearson correlation coefficient is generally described by the following relationship: Or :
- - X and Y correspond respectively to the matrix of the intensities of the pixels of the image of the grating to be analyzed 1 (first or second digital image), and to the matrix of the intensities of the pixels of the reference pattern.
- step d) is advantageously followed by a step d') consisting in counting a total number of patterns 10 of the first and second series whose correlation coefficient, in absolute value, is greater than the threshold predetermined.
- Step d') is advantageously implemented by a computer.
- Step e) is executed if the total number of patterns 10 is greater than a predetermined value.
- the conditional branch (symbolized by a diamond) of FIG. 7 tests whether the total number of patterns 10 is greater than said predetermined value.
- Step e) is advantageously implemented by a computer.
- the threshold may be between 0.6 and 0.7.
- step e) advantageously comprises the steps: ei) performing a section line for each pattern 10 of the first and second series whose correlation coefficient, in absolute value, is greater than the predetermined threshold; e 2 ) extract the characteristic dimension from the cutting line.
- step e) consists in extracting:
- first characteristic dimensions extracted for each pattern 10 of the first and second series are representative of the height
- second characteristic dimensions extracted for each pattern 10 of the first and second series are representative of the diameter
- step e) comprises the steps: e′i) performing:
- the first cut line made during step e'i) for each pattern 10 of the first series makes it possible to clearly identify the beginning and the end of the pattern 10 (points A and C), when the pattern 10 is a nanowire.
- the first cutting line made during step e′i) for each pattern 10 of the second series makes it possible to clearly identify the top of the pattern 10 (point B), when the pattern 10 is a nanowire.
- the height of the nanowire corresponds to the distance between points B and C.
- the first cutting line performed during step e′i) for each pattern 10 of the first series makes it possible to clearly identify the interface between the nanowire and the collar (point C), when pattern 10 is a nanowire having a so-called necklace morphology, as well as the beginning and the end of the nanowire (points C and A).
- the first cut line made during step e'i) for each pattern 10 of the second series makes it possible to clearly identify the top of the pattern 10 (point B) and the start of the collar ( point D), when the pattern 10 is a nanowire having a so-called necklace morphology.
- the height of the nanowire corresponds to the distance between points B and C.
- the height of the collar corresponds to the distance between points C and D.
- the measurement of the height of the nanowire (or of the collar) takes into account the angle of rotation of the support 2 around the first and second directions.
- the characteristic dimensions extracted during step e) are first determined in pixels, then are converted into plain using the size of the pixels. Step f)
- the method advantageously comprises a step f) consisting in generating a histogram of the characteristic dimensions extracted during step e).
- Step f) is advantageously implemented by a computer.
- an object of the invention is a method for characterizing a set of gratings to be analyzed 1 each comprising periodic patterns 10, the method comprising the steps: a) providing a digital image of a grating reference, showing a reference series of periodic patterns; b) defining a reference pattern from the patterns of the reference series; (c) provide:
- each network to be analyzed 1 of the set from a scanning electron microscope, obtained from secondary electrons, and showing a second series of periodic patterns 10; the method iterating the following steps, for each first digital image and each second digital image of each network to be analyzed 1 of the set: d) calculating a correlation coefficient between each pattern 10 of the first and second series and the reference pattern; e) extracting a characteristic dimension for each pattern 10 of the first and second series whose correlation coefficient, in absolute value, is greater than a predetermined threshold.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Geometry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR2110021A FR3127318B1 (fr) | 2021-09-23 | 2021-09-23 | Procédé de caractérisation d’un réseau à analyser comportant des motifs périodiques |
| PCT/EP2022/076129 WO2023046697A1 (fr) | 2021-09-23 | 2022-09-20 | Procede de caracterisation d'un reseau a analyser comportant des motifs périodiques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP4405897A1 true EP4405897A1 (fr) | 2024-07-31 |
Family
ID=78483378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP22786797.5A Withdrawn EP4405897A1 (fr) | 2021-09-23 | 2022-09-20 | Procede de caracterisation d'un reseau a analyser comportant des motifs périodiques |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240394867A1 (fr) |
| EP (1) | EP4405897A1 (fr) |
| FR (1) | FR3127318B1 (fr) |
| WO (1) | WO2023046697A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3127319B1 (fr) * | 2021-09-23 | 2023-09-29 | Commissariat Energie Atomique | Procédé de classification de défauts d’un réseau à analyser |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5536085B2 (ja) * | 2008-11-06 | 2014-07-02 | ナノメガス エスピーアールエル | 電子線回折による高スループット結晶構造解析のための方法及びデバイス |
| US9311698B2 (en) | 2013-01-09 | 2016-04-12 | Kla-Tencor Corp. | Detecting defects on a wafer using template image matching |
| US11380516B2 (en) * | 2017-04-13 | 2022-07-05 | Fractilia, Llc | System and method for generating and analyzing roughness measurements and their use for process monitoring and control |
-
2021
- 2021-09-23 FR FR2110021A patent/FR3127318B1/fr not_active Expired - Fee Related
-
2022
- 2022-09-20 WO PCT/EP2022/076129 patent/WO2023046697A1/fr not_active Ceased
- 2022-09-20 US US18/694,084 patent/US20240394867A1/en active Pending
- 2022-09-20 EP EP22786797.5A patent/EP4405897A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR3127318A1 (fr) | 2023-03-24 |
| WO2023046697A1 (fr) | 2023-03-30 |
| US20240394867A1 (en) | 2024-11-28 |
| FR3127318B1 (fr) | 2023-11-17 |
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