EP4347912A1 - Method for digital formation of 2d materials structures, applications thereof and a system - Google Patents
Method for digital formation of 2d materials structures, applications thereof and a systemInfo
- Publication number
- EP4347912A1 EP4347912A1 EP22721839.3A EP22721839A EP4347912A1 EP 4347912 A1 EP4347912 A1 EP 4347912A1 EP 22721839 A EP22721839 A EP 22721839A EP 4347912 A1 EP4347912 A1 EP 4347912A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- donor
- substrate
- donor material
- laser
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 76
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 230000001678 irradiating effect Effects 0.000 claims abstract description 14
- 229910052582 BN Inorganic materials 0.000 claims abstract description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 5
- 238000013519 translation Methods 0.000 claims description 46
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 239000004205 dimethyl polysiloxane Substances 0.000 description 17
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
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- 235000012239 silicon dioxide Nutrition 0.000 description 11
- -1 polydimethylsiloxane Polymers 0.000 description 9
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- 238000007639 printing Methods 0.000 description 8
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- 238000002474 experimental method Methods 0.000 description 7
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- 238000001069 Raman spectroscopy Methods 0.000 description 6
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- 230000004044 response Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000003841 Raman measurement Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 229920005570 flexible polymer Polymers 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007648 laser printing Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000000399 optical microscopy Methods 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000001530 Raman microscopy Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
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- 238000004476 mid-IR spectroscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
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- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in vacuum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/34—Laser welding for purposes other than joining
- B23K26/342—Build-up welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/5813—Thermal treatment using lasers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Definitions
- the present invention generally relates to the fields of coating technologies, and, more particularly, to a system and method for printing of 2D materials.
- the deposition of two-dimensional (2D) materials on electronics and electronic componentry typically involves multiple time-consuming processing steps which increase device fabrication complexity and the risk of impurity contamination.
- chemical vapor deposition involves multiple processes, each carrying a risk for unwanted modification, or even destruction, of the printed specimen.
- Wet- transfer/deposition methods also involve steps that risk the destruction of the substrate, as a chemical solution is required to remove temporary support layer and etch a supporting metal foil (e.g., Cu, Ni), during transfer of 2D materials to the substrate, followed by the removal of any solvent residues through high-temperature annealing.
- a supporting metal foil e.g., Cu, Ni
- Solvent-free dry-transfer approaches also include risky steps, including the complete removal of any polymer stamps which may be used to facilitate the transfer of the 2D material, or the control of damage caused by the physical delamination of the 2D material when it is peeled off a metal substrate.
- risky steps including the complete removal of any polymer stamps which may be used to facilitate the transfer of the 2D material, or the control of damage caused by the physical delamination of the 2D material when it is peeled off a metal substrate.
- photolithography can provide good control over printed features.
- photolithography also increases the cost of the overall fabrication and the likelihood of impurity insertion during the removal of polymer photoresists. Therefore, it is desirable to provide a system or method that avoids the shortcomings of conventional approaches.
- the method includes generating a receiver substrate. In some embodiments, the method further includes generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface. In some embodiments, the method further includes applying a coating to the front surface, wherein the coating includes donor material. In some embodiments, the method further includes aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer. In some embodiments, the method further includes regulating the pressure inside the vacuum chamber under which the transfer is performed to values ranging between atmospheric pressure (1000 mbar) and reduced pressure down to 10 2 mbar. In some embodiments, the method further includes irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by the laser to transfer a portion of the donor material to the target layer.
- the method further includes scanning the donor substrate through a focal point of the laser while irradiating the donor material with the laser to continuously provide new donor material to transfer to the receiver substrate.
- the method further includes scanning the receiver substrate while irradiating the donor material with the laser to form a selected pattern of the donor material on the target layer.
- the e.g., selected pattern of the donor material on the target layer comprises a layer of the donor material on the target layer.
- the donor substrate comprises nickel. [0010] In some embodiments of the method, the donor substrate comprises organosilicon.
- the donor substrate comprises polydimethylsiloxane.
- the donor material comprises at least one of Bi 2 S 3 -xSx, M0S2, hexagonal boron nitride (h-BN) or graphene.
- the receiver substrate comprises silicon or silicon dioxide.
- the receiver substrate comprises poly(methyl methacrylate).
- the method further comprises applying a dynamic release layer to the front surface of the donor substrate. In some embodiments of the method, the method further comprises applying the donor material to the dynamic release layer.
- the donor material is conductive ink
- the method further includes fashioning a touch sensor from the conductive ink.
- the system includes a laser configured to generate a first laser beam.
- the system further includes one or more optical elements configured to direct the first laser beam and the laser beam through a focusing lens.
- the system further includes one or more beam control elements configured to transmit the laser beam through the focusing lens.
- the system further includes a first translation stage assembly adapted to support a donor substrate.
- the donor substrate comprises a back surface and a front surface.
- the donor substrate further comprise a coating disposed on the front surface, wherein the coating includes a donor material.
- the system further includes a second translation stage assembly adapted to support a receiver substrate.
- the system further includes a vacuum chamber that encloses the donor and the receiver substrates and allows regulation of the pressure inside the chamber (10 2 -1000 mbar).
- the system further includes a controller communicatively coupled to the first and second translation stage assemblies and the one or more beam control elements. In one or more embodiments of the system, the controller is configured to direct the second translation stage assembly to align the receiver substrate to a focal plane of the objective lens.
- the controller is configured to direct at least one of the first translation stage or the second translation stage to align the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the coating on the donor substrate is located at the focal plane of the objective lens.
- the controller is configured to direct at least one of first translation stage, the second translation stage, or the one or more beam control elements to irradiate the coating through the back surface of the donor substrate to transfer a portion of the donor material to the target layer of the receiver substrate.
- directing at least one of the first translation stage, the second translation stage, or the one or more beam control elements to irradiate the coating through the back surface of the donor substrate to transfer a portion of the donor material to the target layer of the receiver substrate comprises directing at least one of the first translation stage, the second translation stage, or the one or more beam control elements to scan the donor substrate through a focal point of the second laser while irradiating the donor material with the second laser to continuously provide new donor material to transfer to the receiver substrate.
- directing at least one of the first translation stage, the second translation stage, or the one or more beam control elements to irradiate the coating through the back surface of the donor substrate to transfer a portion of the donor material to the target layer of the receiver substrate comprises directing at least one of first translation stage, the second translation stage, or the one or more beam control elements to scan the receiver substrate while irradiating the donor material with the second laser to form a selected pattern of the donor material on the target layer of the receiver substrate.
- the selected pattern of the donor material on the target layer comprises a layer of the donor material on the target layer.
- the donor material is conductive ink, wherein the system fashions a touch sensor on the receiver substrate via the conductive ink.
- FIG. 1 illustrates a diagram of a laser transfer assembly for the system 100 in accordance with one or more embodiments of the present disclosure.
- FIG. 2 is a block diagram illustrating control componentry for the system, in accordance with one or more embodiments of the disclosure.
- FIG. 3 illustrates a detailed diagram of the transfer optic system transfer laser assembly of the system, in accordance with one or more embodiments of the present disclosure.
- FIG. 4 illustrates a diagram of support and componentry for the system in accordance with one or more embodiments of the disclosure.
- FIG. 5 illustrates a diagram of the optical tower 232 for the system 100 in accordance with one or more embodiments of the disclosure.
- FIG. 6 illustrates a diagram of two translation stage assemblies for the system in accordance with one or more embodiments of the disclosure.
- FIG. 7 illustrates an overall diagram of the system, in accordance with one or more embodiments of the disclosure.
- FIG. 8 illustrates a method 800 for transferring donor material, in accordance with one or more embodiments of the disclosure.
- FIGS. 9A-B illustrate scanning electronic microscopy (SEM) images of LIFT- printed Bi2Se3, in accordance with one or more embodiments of the disclosure.
- FIGS 10A-B illustrate SEM and optical microscopy images of a LIFT printed M0S2 and hBN printed substrates, respectively, in accordance with one or more embodiments of the disclosure.
- FIGS. 11A-D illustrate SEM images demonstrating LIFT of hBN in accordance with one or more embodiments of the disclosure.
- FIG. 12A illustrates an optical microscopy photograph of an array of laser printed graphene pixels onto a Si02/Si substrate, in accordance with one or more embodiments of the disclosure.
- FIG 12B illustrates an SEM image of a single graphene pixel, in accordance with one or more embodiments of the disclosure.
- FIG 12C illustrates an optical microscopy image of four graphene arrays printed onto PDMS, in accordance with one or more embodiments of the disclosure.
- FIG. 12D is a Raman color map for a I2D/IG peak intensity ratio, reconstructed using 30 Raman measurements obtained from a single graphene pixel transferred on Si02/Si, in accordance with one or more embodiments of the disclosure.
- FIG. 12E is a graph illustrating Raman spectra from 10 distinct graphene pixels LIFT-printed on Si02/Si, in accordance with one or more embodiments of the disclosure.
- FIG. 12E is a graph illustrating Raman spectra from 10 distinct graphene pixels LIFT-printed on Si02/Si, in accordance with one or more embodiments of the disclosure.
- FIG. 13 is an SEM image depicting a Graphene/ hBN heterostructure laser transferred over an existing laser transferred Graphene/ hBN heterostructure on a Si02/Si substrate.
- Embodiments of the present disclosure are directed to a system 100 and method for printing highly resolved pixels of two-dimensional (2D) materials on a substrate.
- the system and method are based on Laser Induced Forward Transfer (LIFT) technology, which facilitates the printing of graphene, M0S2, hexagonal boron nitride (h-BN), Bi2Se(3-x)Sx, and other materials onto Si02/Si and flexible polymers, and other substrates.
- LIFT Laser Induced Forward Transfer
- the transferred 2D materials are employed for the fabrication of devices including flexible touch sensors and Field-Effect-Transistors.
- the system and method may also be used to generate Heterostructures of 2D materials.
- FIG. 1 illustrates a diagram of a laser transfer assembly 104 for the system 100, in accordance with one or more embodiments of the present disclosure.
- the transfer laser assembly 104 is configured to produce a transfer beam 108 capable of laser induced forward transfer (LIFT).
- the system 100 includes a vacuum chamber 110 which regulates the pressure inside the chamber.
- the laser transfer assembly 104 includes a donor substrate 112 that receives the transfer beam 108 on a back surface 116.
- the donor substrate may also be coated on a front surface 120 with donor material 124.
- a transfer material portion 128 of the donor material 124 corresponding to the position of the transfer beam 108 is ejected from the front surface 120 of the donor substrate 112, landing on a receiving side 132 of a receiver substrate 136 (e.g., the material or object to be coated by the donor material 124).
- the donor material 124 may be any material that is to be deposited onto the receiver substrate 136, including but not limited to graphene, M0S2, hexagonal boron nitride (h-BN), and Bi2Se(3-x)S x .
- the vacuum chamber 110 may be configured to generate any vacuum or any range of vacuum values.
- the vacuum chamber 110 may be configured to generate a vacuum in a range of 1000 mbar (e.g., essentially near atmospheric or ambient pressure) to 0.02 mbar.
- the vacuum chamber 110 may be configured to generate a vacuum in a range of 1000 mbar to 0.2 mbar.
- the vacuum chamber 110 may be configured to generate a vacuum in a range of 1000 mbar to 0.2 mbar.
- the vacuum chamber 110 may be configured to generate a vacuum in a range of 1000 mbar to 2 mbar.
- the vacuum chamber 110 may be configured to generate a vacuum in a range of 1000 mbar to 20 mbar. In another example, the vacuum chamber 110 may be configured to generate a vacuum of approximately 35 mbar (e.g., 30-40 mbar). The creation of a vacuum in the vacuum chamber reduces the air resistance to the donor material 124 as it travels from the donor substrate 112 to the receiver substrate 136.
- the donor substrate 112 may be formed of any type of material capable of LIFT techniques and may contain multiple layers.
- the donor substrate 112 may be configured with a first donor layer 138 and a second donor layer.
- the first donor layer 138 may be configured as a durable translucent layer constructed of material capable of maintaining structure under high illumination intensities, including but not limited to quartz and silica (e.g., a fused silica plate).
- the second donor layer 142 may be configured as a layer capable of binding the first donor layer 138 on one side, while binding the donor material 124 on the opposite side.
- the second donor layer 142 may be comprised of a metal including but not limited to nickel, nickel-alloy, platinum, aluminum, titanium, or gold material.
- the second donor layer may be configured as an organosilicon compound such as polydimethylsiloxane (PDMS).
- PDMS polydimethylsiloxane
- the second donor layer may be configured as sapphire.
- Donor material may also include any glass substrate, silicon, a silicon and silicon dioxide mixture.
- the receiver substrate 136 may be formed of any type of material capable of receiving LIFT transferred material and may contain multiple layers.
- the receiver substrate 136 may be configured with a first receiving layer 146 and a second receiving layer 150.
- the first receiving layer may be constructed of a layer of silicon dioxide that is itself bound to the second receiving layer constructed of silicon (e.g., materials common to integrated circuits and related technologies).
- the receiver substrate 136 may be constructed of one or more polymers (e.g., flexible polymers) used in the electronics industry.
- the receiver substrate 136 may include poly(methyl methacrylate) (PMMA).
- the receiver substrate 136 may be configured as, or employed for the fabrication of, any electronic or electronic-related component including but not limited to sensors (e.g., touch sensors), transistors (e.g., field effect transistors), capacitors, resistors, wires, circuits, integrated circuits, and circuit boards (e.g., printed circuit boards (PCBs).
- the receiver substrate 136 may be configured as a PCB, while the transfer material portion 128 is conducting ink (e.g., made of 2D material).
- the laser transfer assembly 104 may be configured to create a touch sensor upon a PCB using 2D material via LIFT.
- the laser transfer assembly 104 may be configured to create a field effect transistor upon a PCB using 2D material via LIFT.
- LIFT printing facilitates precise layering control of a variety of 2D materials onto a variety of donor substrates (e.g., such as control boards).
- the precision of LIFT is due in part to the ability of the transfer beam 108 to form small and consistent beam spots.
- LIFT is a digital method, discarding the need for masks, and is capable of generating any 2D geometrical shape on - demand relying on the beam spot size and shape and the scanning of the laser beam.
- the beam spot size and shape can be tuned using optical components.
- the non-recurring engineering time and cost for a new batch is very limited with respect to standard etching and wet transfer methods. LIFT also requires less energy for material transfer than conventional methods.
- FIG. 2 is a block diagram illustrating control componentry for the system 100, in accordance with one or more embodiments of the disclosure.
- the system 100 may include one or more computing units 200 configured to provide the processing ability to carry out the functions of the system 100 and to facilitate communication between components and/or modules of the system 100.
- the computing unit 200 may be communicatively coupled to the transfer laser assembly 104.
- the computing unit 200 includes a controller 204 configured to perform the functionality performed within.
- the computing unit 200 may be configured as any device capable of automating and/or controlling componentry of the system 100.
- the computing unit 200 may be a desktop computer.
- the computing unit 200 may be a laptop computer.
- the controller 204 may include one or more processors 208, memory 212, and a communication interface 216.
- the one or more processors 208 may include any processor or processing element known in the art.
- the term “processor” or “processing element” may be broadly defined to encompass any device having one or more processing or logic elements (e.g., one or more micro-processor devices, one or more application specific integrated circuit (ASIC) devices, one or more field programmable gate arrays (FPGAs), or one or more digital signal processors (DSPs)).
- the one or more processors 208 may include any device configured to execute algorithms and/or instructions (e.g., program instructions stored in memory).
- the one or more processors 208 may be embodied as a desktop computer, mainframe computer system, workstation, image computer, parallel processor, networked computer, or any other computer system configured to execute a program configured to operate or operate in conjunction with the system 100, as described throughout the present disclosure.
- different subsystems of the system 100 may include a processor or logic elements suitable for carrying out at least a portion of the steps described in the present disclosure. Therefore, the above description should not be interpreted as a limitation on the embodiments of the present disclosure but merely as an illustration.
- the memory 212 can be an example of tangible, computer-readable storage medium that provides storage functionality to store various data and/or program code associated with operation of the controller 204 and/or other components of the system 100, such as software programs and/or code segments, or other data to instruct the controller and/or other components to perform the functionality described herein.
- the memory 212 can store data, such as a program of instructions for operating the system 100 or other components.
- data such as a program of instructions for operating the system 100 or other components.
- the memory can be integral with the controller, can comprise stand-alone memory, or can be a combination of both.
- the memory 212 can include removable and non-removable memory components, such as random-access memory (RAM), read-only memory (ROM), flash memory (e.g., a secure digital (SD) memory card, a mini-SD memory card, and/or a micro-SD memory card), solid-state drive (SSD) memory, magnetic memory, optical memory, universal serial bus (USB) memory devices, hard disk memory, external memory, and so forth.
- RAM random-access memory
- ROM read-only memory
- flash memory e.g., a secure digital (SD) memory card, a mini-SD memory card, and/or a micro-SD memory card
- SSD solid-state drive
- magnetic memory magnetic memory
- optical memory optical memory
- USB universal serial bus
- the communication interface 216 can be operatively configured to communicate with components of the controller 204 and other components of the system 100.
- the communication interface 216 can be configured to retrieve data from the controller 204 or other components, transmit data for storage in the memory 212, retrieve data from storage in the memory 212, and so forth.
- the communication interface 216 can also be communicatively coupled with controller 204 and/or system elements to facilitate data transfer between system components.
- the system 100 may further include a translation stage assembly 220, a display 224, a user interface 228, and/or an optical tower 232 communicatively coupled to the computing unit 200.
- the user interface 228 is configured to receive input from a user.
- the one or more user interfaces 228 may include one or more input devices that may include any user input device known in the art.
- the one or more input devices may include, but are not limited to, a keyboard, a keypad, a touchscreen, a lever, a knob, a scroll wheel, a track ball, a switch, a dial, a sliding bar, a scroll bar, a slide, a handle, a touch pad, a paddle, a steering wheel, a joystick, a bezel input device, or the like.
- FIG. 3 illustrates a detailed diagram of transfer laser assembly 104 of the system 100, in accordance with one or more embodiments of the present disclosure.
- the transfer laser assembly 130 includes transfer laser 304.
- the transfer laser 304 produces the transfer beam 108 that transfers donor material 124 to the receiver substrate 136.
- the transfer laser 300 may be any laser known in the art used for transferring donor material 124 including but not limited to a solid-state laser, a gas laser, a dye laser, or a semiconductor laser.
- the transfer laser 304 may be a diode pumped solid state laser.
- the transfer laser 304 may be a diode pumped Nd:YAG solid-state micro-laser.
- the transfer laser assembly 104 may include the transfer laser 304 and associated refractive/reflective componentry, and may also include the donor substrate 112 and the receiver substrate 136.
- the transfer beam 108 produced by the transfer laser 304 may be of any wavelength or wavelength range known in the art (e.g., from approximately 193 nm to 2500 nm).
- the transfer laser 304 may produce a transfer beam 108 in the visible spectrum (e.g., 380 to 780 nm).
- the transfer beam 108 may have a wavelength of approximately 532 nm.
- the transfer laser 304 may produce a transfer beam 140 in the near infrared spectrum (e.g., 780 to 2500 nm).
- the transfer beam 108 produced by the transfer laser 304 may be pulsed.
- the pulse rate of the transfer beam 108 may be any pulse rate or range of pulse rates known in the art.
- the transfer laser 304 may produce a transfer beam 108 with a pulse rate ranging from 1 Flz to lO kFlz.
- the transfer laser 304 may produce a transfer beam 108 with a pulse rate ranging from 10 Flz to 1 kFIz.
- the transfer laser may produce a translation beam 140 with a pulse rate of approximately 10 Flz.
- the transfer laser 304 may produce a translation beam 108 with a pulse rate ranging from 100 Hz to 1 kHz.
- the transfer laser 304 may produce a translation beam 108 with a pulse rate of approximately 1 kHz.
- the transfer laser 304 produces a pulsed transfer beam 108 with a specific pulse length or range of pulse lengths.
- the pulse length of the transfer beam 108 may be any pulse rate known in the art.
- the length of the pulse of the transfer beam 108 may range from 60 ps to 6 ns.
- the length of the pulse of the transfer beam 108 may range from 100 ps to 1 ns.
- the length of the pulse of the transfer beam 108 may be approximately 600 ps.
- the transfer laser 304 produces a transfer beam 140 with a specific fluence or range of fluences.
- the fluence of the transfer beam 140 may be any range or value known in the art.
- the fluence of the transfer beam 108 may be in the range of 10 mJ/cm 2 to 10 J/cm 2 .
- the fluence of the transfer beam 108 may be in the range of 100 mJ/cm 2 to 1 J/cm 2 .
- the fluence of the transfer beam 108 may be in the range of 100 mJ/cm 2 to 500 mJ/cm 2 .
- the fluence of the transfer beam 140 may be in the range of 300 mJ/cm 2 to 800 mJ/cm 2 .
- the transfer laser assembly 104 includes one or more optical elements configured to direct the transfer beam 108.
- the optical elements may be any known in the art including but not limited to mirrors, lenses, and beamsplitters.
- the optical element may include one or more reflecting mirrors 308.
- the optical element may be an optical attenuator 316.
- the optical element may be a fixed attenuator plate.
- the optical element may include one or more focusing lenses 312 (e.g., an f-theta scan lens).
- the one or more focusing lenses 312 may be a 100 mm f-theta scan lens.
- the focusing lens 230 controls the cross-sectional area of the laser spot upon the donor substrate 112 or the receiver substrate 136.
- the focusing lens 230 may be any type of lens known in the art including but not limited to an achromatic lens.
- the focusing lens 230 may be a 150 mm achromatic lens.
- the focusing lens 230 may be a 75 mm achromatic lens.
- donor substrate 112 aids in the transfer of the donor material 124 to the receiver substrate 160.
- the front surface 120 of the donor substrate 112 may include or be coated with a laser absorbing layer (e.g., a dynamic release layer), that absorbs laser energy.
- the donor substrate 112 further includes a back surface 116 that initially receives the transfer beam 108. During LIFT, a layer of donor material 124 is coated over front surface 120.
- the transfer laser 304 is activated, the transfer beam 108 enters the back surface 116 of the donor substrate 112.
- the transfer beam 108 reaches the laser absorbing layer, localized heating at the laser absorbing layer and the coating of donor material 124 create a high- pressure vapor bubble or pressure wave within a localized area. The expansion of the vapor bubble then drives the ejection of the transfer material portion 128 of the donor material 124 towards the receiver substrate 160.
- the donor substrate 320 is a quartz plate. In some embodiments, the donor substrate is a fused silica plate. In some embodiments, the donor substrate is coated with a film.
- the film may be a polymeric organosilicon compound (e.g., polydimethylsiloxane (PDMS)). In another example, the coating may be a thin gold film.
- the size or range of sizes of the transfer material portion 128 of the donor material 124 may be adjusted for the specific LIFT requirements.
- the transfer material portion may have an area ranging from 1 pm 2 to 1 mm 2 .
- the area of the material portion 128 may range from 10 pm 2 to 100 pm 2 .
- the area of the material portion may be approximately 900 pm 2 (e.g., a 30 pm x 30 pm square).
- the area of the material portion may be approximately 0.09 pm 2 (e.g., a 300 pm x 300 pm square).
- FIG. 4 illustrates a diagram of support and componentry for the system 100 in accordance with one or more embodiments of the disclosure.
- the system includes a top breadboard 405.
- the top breadboard 405 may be aluminum and further include holes (e.g., M6 threads) to support system componentry.
- the system may include a laser controller 410 positioned near the transfer laser 304.
- the laser controller 410 controls one or more parameters of the laser (e.g., power and/or pulse rate).
- the system 100 may include a rotator 422, a polarizer 425 and a beam dump 430.
- the polarizer may be configured to be set at a Brewster’s angle.
- the beam dump 430 may be configured to effectively trap the portion of the beam that is reflected from the polarizer 425.
- the system 100 further includes a beam expander 435 to magnify the beam. Multiple reflecting mirrors 308 are used to direct the transfer beam 108.
- FIG. 5 illustrates a diagram of the optical tower 232 for the system 100 in accordance with one or more embodiments of the disclosure.
- the optical tower 232 may be utilized for both the LIFT procedure and imagery purposes.
- the optical tower 232 includes an optic rail 505 mounted to a base breadboard 510 that supports the elements of the optical tower 232.
- the optical tower 500 further includes a 2D galvanometric scanner 525, and a beam splitter 515 that directs the transfer beam 108 to the focusing lens 312.
- the optical tower 232 further includes a light source 520 mounted coaxially with the 2D galvanometric scanner 525 and the f-theta or the focusing lens 312.
- the light source 520 is configured to illuminate the receiver substrate 136 and/or the donor substrate 112, allowing observance by a camera 530 (e.g., a CCD camera).
- the light source 520 may include any type of light source known in the art including but not limited to a light emitting diode.
- FIG. 6 illustrates a diagram of two translation stage assemblies 220a, 220b for the system 100 in accordance with one or more embodiments of the disclosure.
- the two translation stage assemblies 220a, 220b are arranged so that the receiver substrate 136 is mounted to one of the translation stage assemblies 220a, while the donor substrate 136 is mounted to the other translation stage assembly 220b (e.g., one of the translation stage assemblies 220a, 220b is adapted to support the donor substrate 112, while the other of the translation stage assemblies 220a, 220b is adapted to support the receiver substrate 136), while both are enclosed in the vacuum chamber 110.
- each translation stage assembly 220a, 220b includes a mounting surface 610a, 610b that are coupled to a first translatable stage 620a, 620b translatable on a z-axis.
- the first translatable stage 620a, 620b is coupled to a second translatable stage 630a, 630b and a third translatable stage 640a, 640b configured for X-axis and Y-axis translation.
- the first translatable stage 620a, 620b, second translatable stage 630a, 630b, and/or third translatable stage 640a, 640b may be motorized (e.g., under the control of the computing unit 200).
- any configuration of translation stages may be used to for X-axis, Y-axis, and Z-axis movement of the donor substrate 112 or the receiver substrate 136. Therefore, the above description is not intended to be a limitation of the present disclosure, but merely an illustration.
- FIG. 7 illustrates a diagram of the system 100, in accordance with one or more embodiments of the disclosure.
- the top breadboard 405 is mounted onto the base breadboard via one or more columns 700.
- the optical tower 232 and the translation stage assemblies 220a, 220b are mounted to the base breadboard 510.
- the system 100 may include, or may not include, one or more components as described herein.
- the system 100 may include a scanning electronic microscope (SEM) instead of an optical tower 232. Therefore, the above description should not be interpreted as a limitation on the embodiments of the present disclosure but merely as an illustration.
- SEM scanning electronic microscope
- FIG. 8 illustrates a method 800 for transferring donor material, in accordance with one or more embodiments of the disclosure. Accordingly, method 800 may include any step expressed or implied by the foregoing embodiments of the system 100. Further, it is contemplated that one or more steps of method 800 may be executed by a system or device known to the art beyond those described above. As such, method 800 should be understood to encompass any configuration for carrying out the following steps.
- the method 800 comprises a step 810 of generating the receiver substrate 136.
- the receiver substrate 136 may be produced by any methods and materials as described herein.
- the method 800 further includes a step 820 of generating the donor substrate 112, wherein the donor substrate 112 comprises a back surface 116 and the front surface 120.
- the method 800 further includes a step 830 of applying a coating to the front surface 120, wherein the coating includes donor material 124.
- the donor material 310 may include graphene, M0S2, hexagonal boron nitride (h-BN), and/or Bi2Se(3-x)Sx.
- the method 800 further includes a step 840 of aligning the front surface 120 of the donor substrate 112 to be parallel to and facing the receiver substrate 136, wherein the donor material 124 is disposed adjacent a target layer (e.g., the first receiving layer 146, or a coating on the first receiving layer).
- the alignment may be performed by the translation stage assemblies 220a, 220b.
- the method 800 further includes a step 850 of configuring the pressure inside the vacuum chamber 110 which encloses the donor substrate 112 and the receiver substrate 136.
- the method 800 further includes a step 860 of irradiating the coating through the back surface 116 of the donor substrate 112 with one or more laser pulses produced by a laser (e.g., transfer laser 304) to transfer a portion of the donor material 124 to the target layer.
- the method 800 further includes a step 870 of scanning the donor substrate 112 through a focal point of the laser while irradiating the donor material 310 with the laser to continuously provide new donor material 124 to transfer to the receiver substrate 136. By moving/translating the donor substrate 112 along the same plane as the receiver substrate 136, the donor substrate 112 can keep supplying donor material 124 from the coating until the donor material 124 from the coating is depleted.
- the method 800 further includes a step 880 of scanning the receiver substrate 136 while irradiating the donor material 124 with the laser to form a selected pattern of the donor material 124 on the target layer.
- the selected pattern may include one, or more than one, layers of donor material 124 that has been deposited on the target layer.
- Graphene was grown on a poly-crystalline copper (Cu) foil catalyst (18 pm) via chemical vapor deposition using a Cold Wall CVD Reactor from Aixtron.
- the Cu foil was chemically treated and thermally annealed prior to the graphene growth at 1000 °C and at low pressure using methane as the carbon source.
- the graphene was transferred from the Cu foils to Ni coated (50 nm) quartz substrates using a standard wet transfer process where a poly(methyl methacrylate) (PMMA) layer is first applied onto the graphene/Cu followed by etching of the Cu foil.
- PMMA poly(methyl methacrylate)
- the film is placed on the Ni coated quartz substrate by submerging the substrate in water. Finally, the PMMA is removed using acetone.
- h-BN and Bi 2 Se 3 donor substrates the materials were grown by CVD on quartz on Nickel (for Bi 2 Se 3 ) and sapphire respectively (for h-BN and Bi2Se(3-x)Sx).
- the graphene/ h-BN heterostructures the graphene and the h-BN were grown as described above and transferred to h-BN and S1O2, respectively.
- Bi2Se3 flakes were transferred on graphene-coated Field Effect Transistor (FET) devices using LIFT.
- the graphene-FET substrate comprised gold electrodes as contacts and graphene applied on the active area of each transistor device.
- the donor substate comprised CVD grown, Bi 2 Se (3-x) S x on sapphire.
- the Raman spectrum of the printed Bi 2 Se 3 is in agreement with the as grown material form the donor substrate, while scanning electron microscopy (SEM) measurements show that the transferred structures preserve their morphological characteristics, as shown in FIGS. 9A-B, in accordance with one or more embodiments of the disclosure.
- SEM scanning electron microscopy
- flakes of M0S2 and hBN were transferred on flexible (PDMS, PEN) and glass substrates respectively using LIFT.
- An SEM image of LIFT printed M0S2 and x) Sx optical microscopy image of hBN LIFT printed on glass are shown in FIGS. 10A-B, respectively, in accordance with one or more embodiments of the disclosure.
- the 3rd harmonic of a pulsed Nd:YAG laser was used and laser fluences between 0.50-2000 mJ/cm2 have been used.
- the donor substate comprised CVD grown, MoS2 on sapphire and CVD grown hBN on sapphire respectively.
- FIG. 11A-D illustrate SEM photographs demonstrating LIFT of hBN in accordance with one or more embodiments of the disclosure.
- hBN was transferred with a 355 nM laser with nanosecond (ns) pulse duration with pixels of hBN transferred with 8 pm to 30 pm resolution.
- LIFT can transfer material in resolutions of 1 pm to 100 pm and is generally limited only by the diffraction limit of the laser wavelength.
- the applied laser energy density (El) is an important factor that enables successful deposition within an optimum window between two threshold values. Below the lower threshold El, no transfer occurs. For single layer graphene on Ni, this minimum El is measured at 20 mJ/cm2, whereas slightly higher values (e.g., 30 mJ/cm2) lead to partial transfer. Energy densities above the upper limit of 100 mJ/cm2 result to violent ablation of Ni and the transferred species are predominantly melted Ni nanoparticles. Therefore, the optimum energy density window is determined in the range between 40-80 mJ/cm 2 (e.g., a sub-ablation regime) and the results described in the following were obtained with an El value of 50 mJ/cm 2 .
- FIGS. 12A-E Another parameter crucial in achieving a largely defect-free transfer of graphene is the pressure under which the experiment is performed.
- the graphene monolayer lands on the receiver substrate in fragments and exhibits significant levels of folding.
- 12A demonstrates a via optical microscopy an array of laser printed graphene pixels onto a Si02/Si substrate (e.g., with 300 nm oxide thickness), with a pixel size of 30 pm x 30 pm at a laser fluence of 50 mJ/cm 2 .
- the printed pixels exhibit well-defined shapes that correspond to that of the projected laser beam.
- FIG. 12B Further evidence in of well-organized transfer is provided by the SEM image shown in FIG. 12B of a single graphene pixel of the array and in an optical microscopy image (FIG. 12C) of four graphene arrays printed onto PDMS and comprising 10 x10 pixels each.
- FIG. 12E detailed characterization with Raman spectroscopy, as shown in FIG. 12E, confirms the high quality and monolayer form of these pixels.
- the presence and relative intensities of the characteristic D, G and 2D peaks of graphene in Raman spectra can give a quantitative account for the number of layers and the concentration of defects in graphene samples.
- the peak intensity ratio of the 2D over the G peak (e.g., for single layer graphene us usually greater than two) gives a simple and direct means to determine the number of graphene layers, while the D peak, a defect-induced peak, provides information related to the presence or absence of defects.
- FIG 12D shows the Raman color map for the I2D/IG peak intensity ratio, reconstructed using 30 Raman measurements obtained from a single graphene pixel transferred on Si02/Si (30 pm x 30 pm).
- the average peak intensity ratio of the 2D over the G peak is calculated at 3.24 ⁇ 0.57 in accordance with the ratio values (e.g., 3.57 ⁇ 0.42) of the substrate of the reference donor (e.g., quartz/Ni/graphene).
- the average G peak position is at 1588.30 ⁇ 1 .44 cm-1 and has a full width at half maximum (FWFIM) of 12.25 ⁇ 1.62 cm-1 , while the average 2D peak position and FWHM are, respectively, 2689.77 ⁇ 1.65 cm-1 and 27.56 ⁇ 1.60 cm-1.
- FWFIM full width at half maximum
- Figure 12E presents Raman spectra from 10 distinct graphene pixels LIFT-printed on Si02/Si, and each spectrum corresponds to a single measurement taken from one random point within each pixel. In this case, the ratio comprising the average intensities of the 2D over the G peak is 3.00 ⁇ 0.31.
- the G (2D) peak has an average position at 1590.86 ⁇ 0.92 cm-1 (2692.01 ⁇ 1.01 cm-1) and a FWHM of 13.00 ⁇ 1.14 cm-1 (29.60 ⁇ 1.17 cm-1).
- the absence of the defect-induced D peak (-1350 cm-1) indicates that no noticeable defects are introduced during the laser transfer process.
- the process may also be used to transfer graphene pixels onto a flexible substrate, namely PDMS.
- FIG. 12C displays four arrays of transferred graphene on PDMS. Each array comprises 100 graphene pixels and covers an area of approximately 300 pm x 300 pm (0.6 mm x 0.6 mm in total for the four arrays). Therefore, the LIFT technique is suitable not only for transferring graphene with high resolution but also for the coverage of larger - millimeter-sizes areas with single layer graphene patterns.
- the compatibility with PDMS also demonstrates that the process can be combined with temperature sensitive substrates which are important in printed electronics applications.
- the process can be applied to the fabrication of touch sensitive 2D materials, or sensing systems that rely on 2D materials, such as touch sensors in a parallel plate capacitor configuration.
- An example design has been implemented and tested in terms of capacitive performance.
- the design of the touch sensor consisted of graphene arrays both as top and bottom sensing electrodes.
- the sensing electrodes were interconnected to pads using metal nanoparticles deposited by LIFT and laser sintered so as to form interconnections with the graphene arrays.
- a dielectric layer resides between the top and the bottom electrode.
- the top electrode is deposited onto the dielectric layer and in the same vertical line with the pad of the bottom electrode.
- Manufacturing of the touch sensor also includes coating the dielectric of the parallel plate capacitor.
- the dielectric must partially cover the bottom electrodes, so as to keep the one side of the pads exposed for measurements using probes.
- PDMS was used owing to the viscoelastic nature of the compound, which offers versatility in form factors, as well as high degradation temperature and excellent adhesion properties with both Si and flexible substrates.
- the resulting thickness of the PDMS layer was 3.5 pm.
- the deposition of graphene onto the top electrode was carried out using LIFT.
- both the top electrode (e.g., to be coated with graphene) and the dielectric layer (e.g., to be coated with multilayer hBN) are deposited at a single step using LIFT.
- a 30x30 array with the graphene square spots size at around 40 pm x 40pm was implemented via LIFT.
- This process was conducted using a laser set-up comprising a ns pulsed laser (Litron ND:YAG, 1064, 532, 355, 266 nm) with a micromachining workstation.
- a ns pulsed laser Litron ND:YAG, 1064, 532, 355, 266 nm
- the donor and receiver substrates were placed in a custom-made vacuum chamber.
- laser sintering was carried out.
- electrical characterization was performed to measure the electrical resistance.
- the geometrical characteristics of the bottom electrodes were measured to calculate the electrical resistivity of the samples.
- Four-point probe l-V measurements of the laser transferred graphene pixels were performed for calculating the sheet resistance. The four probes were placed collinear and equally spaced.
- the measured substrate comprised a reference sample that included a graphene array on a flexible dielectric on rigid substrate (e.g., PDMS on Au/Si) with lateral distance of 1 mm.
- the calculated sheet resistance was 282.7 W/sq.
- Capacitance over Voltage (C-V) measurements delivered an average capacitance of 2.40 ⁇ 0.56 pF were measured (using a two-point probe station).
- the dimensions of the top heterostructure are Graphene/ hBN and consist of an array of 4x4 Graphene/ hBN pixels, while the second heterostructure has a larger surface area of Graphene/ hBN consisting of an array of 6x6 pixels.
- the top heterostructure has smaller area in order to expose part of the bottom heterostructure and facilitate the electrical measurements.
- the second layer can be printed centered over the first layer, or can have an offset with respect to the first with micrometric resolution.
- Chargers were induced in the touch sensor by applying pressure either by a finger or a touch pen with diameter of 60 pm. When the finger approached the sensor surface, a capacitance of 0.8 pF was measured with a response time of 40 ms. The touch sensor was able to recover to its initial capacitance value after removing the applied pressure. Environmental conditions during testing were 23 C° and 30% humidity.
- component A to component B may have the same meaning as the addition of component B to component A (e.g., the two components are mixed together). Therefore, the present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.
- each of the embodiments of the method described above may include any other step(s) of any other method(s) described herein.
- each of the embodiments of the method described above may be performed by any of the systems described herein.
- the herein described subject matter sometimes illustrates different components contained within, or connected with, other components. It is to be understood that such depicted architectures are merely exemplary, and that in fact many other architectures can be implemented which achieve the same functionality. In a conceptual sense, any arrangement of components to achieve the same functionality is effectively "associated" such that the desired functionality is achieved.
- any two components herein combined to achieve a particular functionality can be seen as “associated with” each other such that the desired functionality is achieved, irrespective of architectures or intermedial components.
- any two components so associated can also be viewed as being “connected,” or “coupled,” to each other to achieve the desired functionality, and any two components capable of being so associated can also be viewed as being “couplable,” to each other to achieve the desired functionality.
- Specific examples of couplable include but are not limited to physically mateable and/or physically interacting components and/or wirelessly interactable and/or wirelessly interacting components and/or logically interacting and/or logically interactable components.
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US17/725,365 US20220380901A1 (en) | 2021-05-27 | 2022-04-20 | Laser induced forward transfer of 2d materials |
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