EP4212280A1 - Method of applying a polishing cloth to a polishing plate - Google Patents
Method of applying a polishing cloth to a polishing plate Download PDFInfo
- Publication number
- EP4212280A1 EP4212280A1 EP22151116.5A EP22151116A EP4212280A1 EP 4212280 A1 EP4212280 A1 EP 4212280A1 EP 22151116 A EP22151116 A EP 22151116A EP 4212280 A1 EP4212280 A1 EP 4212280A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- polishing
- cloth
- polishing cloth
- plate
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 160
- 239000004744 fabric Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 10
- 238000009736 wetting Methods 0.000 claims abstract description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
Definitions
- the invention relates to a method for pressing a polishing cloth for use in polishing a semiconductor wafer.
- CMP Chemical Mechanical Polish
- a one-side polish commonly used to reduce the roughness of the front side of a semiconductor wafer. It is therefore also referred to as mirror polishing.
- the semiconductor wafer is pressed with the side to be polished against a rotating polishing cloth by a rotating polishing head and is smoothed in the presence of a supplied polishing agent. This is for example in the US 5,916,016A described.
- Double-side polishing is a process from the group of chemomechanical processing steps.
- semiconductor wafers in carriers made of metal or plastic which have suitably dimensioned recesses, between two rotating polishing plates covered with a polishing cloth, with a working gap being formed between the polishing plates, in the presence of a polishing agent on a path predetermined by the machines and process parameters moved and thereby polished.
- the working layers are in the form of polishing cloths, and these are attached to the working disks with adhesive, magnetically, positively (e.g. using Velcro) or by means of a vacuum.
- Both polishing plates of a DSP system are covered with polishing cloths.
- both polishing cloths should be stuck on without bubbles. It is important that the polishing cloth adheres evenly over the entire polishing pad.
- the polishing pads are moved together under pressure for a certain time after the polishing cloths have been stuck on. This process is also called cloth pressing. Pressing causes the glue to flow and stick better.
- Corresponding methods for cloth pressing are, for example, from EP 1 775 068 A1 and from US 2008/0248728 A1 known.
- the polishing cloth attached to the upper polishing pad is interspersed with a network of channels, while the polishing cloth attached to the lower polishing pad has no such texturing but a smooth surface. This texturing achieves an improved distribution of the polishing agent used, which has an impact on the quality of the polished pane edges.
- the channels can be applied to the polishing cloth, for example, by means of a material-removing milling process.
- the upper polishing cloth preferably has a regular checkerboard-like arrangement of channels with a segment size of 5 mm ⁇ 5 mm to 50 mm ⁇ 50 mm and a channel width of 0.5 to 2 mm.
- Polishing cloths can be made of a thermoplastic or thermosetting polymer.
- a large number of materials can be considered as the material for foamed polishing cloths (foamed pads), e.g. polyurethanes, polycarbonate, polyamide, polyacrylate, polyester, etc.
- a polishing cloth made of a polymer is used, for example, in US 2008/0102741 A1 disclosed.
- polishing cloths can also consist of foamed panels or felt or fiber substrates impregnated with polymers (nonwoven cloth, nonwoven pad). Such a cloth is, for example, in U.S. 5,510,175A described.
- polishing cloths In particular when using hard, less compressible polishing cloths, however, there is the problem that after conventional cloth pressing, the polishing cloths often do not adhere uniformly to the polishing plates. This is due to the fact that there is a polishing gap of up to 300 ⁇ m between the upper and lower polishing plate, which results from the respective distance between the upper and lower polishing cloth. If no countermeasures are taken, the uneven adhesion of the polishing cloths is also noticeable in the quality of the polished semiconductor wafers.
- a method for polishing a semiconductor wafer on both sides is known, with polishing cloths with a hardness at room temperature of at least 80° according to Shore A and with a compressibility at room temperature of less than 3% being attached to the upper and lower polishing plate, with a semiconductor wafer being fixed between the upper and lower polishing cloth is polished on both sides, characterized in that to attach the polishing cloths to the upper and lower polishing plates, the polishing cloths are glued to the upper and lower polishing plates, a cloth with a compressibility at room temperature of at least 3% is positioned between the two glued-on polishing cloths as an intermediate layer and then the both polishing cloths are pressed together with the cloth placed between them for a certain period of time.
- the font DE 10 2019 213 657 A1 suggests using several brushes to press the polishing cloth onto the polishing pad, which are positioned on the polishing cloth in such a way that they exert pressure on the polishing cloth at the same time.
- it is a one-side polish such as a CMP process.
- Another embodiment involves DSP polishing, ie simultaneous polishing of the front side and the back side of a semiconductor wafer with the continuous supply of an alkaline polishing agent between two rotating lower and upper polishing plates.
- both polishing plates are covered with a polishing cloth, with the polishing cloth of the lower polishing plate having a smooth surface and the polishing cloth of the upper polishing plate having a surface interrupted by channels in one embodiment.
- the polishing cloths are glued to the upper and lower polishing plates, with the respective surface of the polishing plate being wetted with a liquid according to the invention before the polishing cloth is placed on the polishing plates.
- the polishing cloth is first wetted with the liquid before the polishing cloth is brought into contact with the upper polishing pad.
- the liquid that was trapped between the polishing cloth and the polishing plate is moved to the edge of the polishing cloth by lightly pressing it and is thus removed, with the polishing cloth being particularly preferably pressed simultaneously onto the polishing plate by means of several brushes.
- the invention is based on the observation that polishing cloths that are applied to the polishing plate without first having a liquid on the polishing plate are wetted, can cause problems in the geometry of the polished semiconductor wafers. It is assumed that small air pockets between the cloth and the polishing pad cause the observed negative influences.
- the geometry of the polished semiconductor wafer deteriorates slightly.
- the ZDD describes the mean curvature at the edge of a surface of the semiconductor wafer and is defined in SEMI M68-1015.
- the liquid used preferably consists of water.
- Isopropanol with a concentration of not less than 10% by volume and not more than 30% by volume is very particularly preferably added to the water.
- Several brushes are preferably used during the local pressing of the polishing cloth onto the polishing plate in order to transport the liquid between the polishing plate and the polishing cloth to the edge of the polishing cloth.
- the temperature of the polishing plate is preferably set to between 18°C and 48°C when the polishing cloth is attached.
- the cloth After removing the liquid between the polishing plate and the polishing cloth, the cloth is pressed down using brushes (according to the state of the art).
- the pressure that the brushes exert on the polishing cloth on the polishing plate is preferably between 1000 Pa and 7500 Pa.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Verfahren zum Anbringen eines Poliertuches an einen Polierteller in einer Poliermaschine zum Polieren von Halbleiterscheiben umfassend das Benetzen des Poliertellers mit einer Flüssigkeit, das in Kontaktbringen des Poliertuches mit dem Polierteller, wobei sich Teile der Flüssigkeit zwischen Polierteller und Poliertuch befinden; das lokale Andrücken des Poliertuches an den Polierteller, so dass die Flüssigkeit zwischen Polierteller und Poliertuch zum Rand des Poliertuches transportiert wird.Method for attaching a polishing cloth to a polishing pad in a polishing machine for polishing semiconductor wafers, comprising wetting the polishing pad with a liquid, bringing the polishing pad into contact with the polishing pad, with parts of the liquid being located between the polishing pad and the polishing cloth; the local pressing of the polishing cloth against the polishing pad so that the liquid between the polishing pad and the polishing cloth is transported to the edge of the polishing cloth.
Description
Gegenstand der Erfindung ist ein Verfahren zum Anpressen eines Poliertuchs zur Verwendung beim Polieren einer Halbleiterscheibe.The invention relates to a method for pressing a polishing cloth for use in polishing a semiconductor wafer.
Die CMP (chemisch-mechanische Politur) ist eine Einseiten-Politur, die üblicherweise dazu verwendet wird, um die Rauigkeit der Vorderseite einer Halbleiterscheibe zu reduzieren. Sie wird daher auch als Glanzpolitur (engl. "mirror polishing") bezeichnet. Während der CMP wird die Halbleiterscheibe mit der zu polierenden Seite von einem sich drehenden Polierkopf gegen ein sich drehendes Poliertuch gedrückt und in Gegenwart eines zugeführten Poliermittels geglättet. Dies ist beispielsweise in der
Das Doppelseiten-Polieren (DSP) ist ein Verfahren aus der Gruppe der chemomechanischen Bearbeitungsschritte. Gemäß einer in der Patentschrift
Beim DSP liegen die Arbeitsschichten in Form von Poliertüchern vor, und diese sind klebend, magnetisch, formschlüssig (beispielsweise mittels Klettverschluss) oder mittels Vakuum auf den Arbeitsscheiben, welche beim DSP auch als sog. Polierteller bezeichnet werden, befestigt. Beide Polierteller einer DSP-Anlage sind mit Poliertüchern beklebt. Um eine hohe Qualität der Bearbeitung durch DSP zu gewährleisten, sollten beide Poliertücher blasenfrei aufgeklebt sein. Dabei ist es wichtig, dass das Poliertuch über den gesamten Polierteller gleichmäßig stark haftet. Um die notwendige Haftung des Klebers zu erreichen, werden die Polierteller nach dem Aufkleben von Poliertüchern für eine bestimmte Zeit unter Druck zusammengefahren. Dieser Prozess wird auch Tuchpressen genannt. Durch das Pressen verfließt der Kleber und haftet besser. Entsprechende Verfahren zum Tuchpressen sind beispielsweise aus
Aus
Das am oberen Polierteller haftende Poliertuch ist mit einem Netzwerk an Kanälen durchsetzt, während das am unteren Polierteller haftende Poliertuch keine solche Texturierung, sondern eine glatte Oberfläche aufweist. Durch diese Texturierung wird eine verbesserte Verteilung des eingesetzten Poliermittels erreicht, was einen Einfluss auf die Qualität der polierten Scheibenkanten hat.The polishing cloth attached to the upper polishing pad is interspersed with a network of channels, while the polishing cloth attached to the lower polishing pad has no such texturing but a smooth surface. This texturing achieves an improved distribution of the polishing agent used, which has an impact on the quality of the polished pane edges.
Die Kanäle lassen sich beispielsweise durch einen materialentfernenden Fräsvorgang auf das Poliertuch aufbringen. Bevorzugt besitzt das obere Poliertuch eine regelmäßige schachbrettartige Anordnung von Kanälen mit einer Segmentgröße von 5 mm × 5 mm bis 50 mm × 50 mm und einer Kanalbreite von 0,5 bis 2 mm.The channels can be applied to the polishing cloth, for example, by means of a material-removing milling process. The upper polishing cloth preferably has a regular checkerboard-like arrangement of channels with a segment size of 5 mm×5 mm to 50 mm×50 mm and a channel width of 0.5 to 2 mm.
Poliertücher können aus einem thermoplastischen oder hitze-härtbaren Polymer bestehen. Als Material für geschäumte Poliertücher (foamed pads) kommt eine Vielzahl an Werkstoffen in Betracht, z.B. Polyurethane, Polycarbonat, Polyamid, Polyacrylat, Polyester usw. Ein aus einem Polymer hergestelltes Poliertuch wird beispielsweise in
Poliertücher können aber auch aus verschäumten Platten oder Filz- oder Fasersubstraten, die mit Polymeren imprägniert sind, bestehen (Vliesstoff-Tuch, nonwoven pad). Ein solches Tuch ist beispielsweise in
Beim Aufkleben der Poliertücher kann es gemäß
Insbesondere bei der Verwendung von harten, wenig kompressiblen Poliertüchern besteht allerdings das Problem, dass nach dem herkömmlichen Tuchpressen oftmals keine gleichmäßige Haftung der Poliertücher an den Poliertellern erzielt wird. Dies hängt damit zusammen, dass zwischen dem oberen und unteren Polierteller ein Polierspalt, der sich aus dem jeweiligen Abstand zwischen dem oberen und unteren Poliertuch ergibt, von bis zu 300 µm besteht. Die ungleichmäßige Haftung der Poliertücher macht sich ohne Gegenmaßnahmen auch bei der Qualität der polierten Halbleiterscheiben bemerkbar.In particular when using hard, less compressible polishing cloths, however, there is the problem that after conventional cloth pressing, the polishing cloths often do not adhere uniformly to the polishing plates. This is due to the fact that there is a polishing gap of up to 300 µm between the upper and lower polishing plate, which results from the respective distance between the upper and lower polishing cloth. If no countermeasures are taken, the uneven adhesion of the polishing cloths is also noticeable in the quality of the polished semiconductor wafers.
Aus
Allerdings hat sich gezeigt, dass bei Verwendung eines mit Kanälen durchsetzten Poliertuchs gemäß
Die Schrift
Es hat sich jedoch gezeigt, dass dieses Verfahren offenbar nicht voll umfänglich ausreicht, um das Poliertuch perfekt auf den Polierteller anhaften zu lassen, ohne dabei die Geometrie des Poliertellers zu verändern. Insbesondere die perfekte Wiederholbarkeit des Vorganges wurde offenbar durch das Verfahren limitiert, das heißt, dass nicht jede Polierfahrt mit neu angebrachten Poliertuch identische und perfekte Ergebnisse liefert.However, it has been shown that this method is apparently not fully sufficient to allow the polishing cloth to adhere perfectly to the polishing plate without changing the geometry of the polishing plate. In particular, the perfect repeatability of the process was apparently limited by the process, which means that not every polishing run with a newly attached polishing cloth delivers identical and perfect results.
Aus dieser Problematik ergab sich die Aufgabenstellung der Erfindung.The task of the invention resulted from this problem.
Die Aufgabe wird gelöst durch das in den Ansprüchen dargelegte Verfahren.The object is solved by the method set out in the claims.
In einer Ausführungsform handelt es sich um eine Einseitenpolitur wie z.B. ein CMP-Verfahren.In one embodiment, it is a one-side polish such as a CMP process.
In einer anderen Ausführungsform handelt es sich um eine DSP-Politur, also um ein gleichzeitiges Polieren der Vorderseite und der Rückseite einer Halbleiterscheibe unter kontinuierlicher Zuführung eines alkalischen Poliermittels zwischen zwei sich drehenden unteren und oberen Poliertellern.Another embodiment involves DSP polishing, ie simultaneous polishing of the front side and the back side of a semiconductor wafer with the continuous supply of an alkaline polishing agent between two rotating lower and upper polishing plates.
Bei DSP sind beide Polierteller mit einem Poliertuch belegt, wobei in einer Ausführungsform das Poliertuch des unteren Poliertellers eine glatte Oberfläche und das Poliertuch des oberen Poliertellers eine durch Kanäle unterbrochene Oberfläche ausweist.In the case of DSP, both polishing plates are covered with a polishing cloth, with the polishing cloth of the lower polishing plate having a smooth surface and the polishing cloth of the upper polishing plate having a surface interrupted by channels in one embodiment.
Zum Befestigen der Poliertücher auf oberem und unterem Polierteller werden die Poliertücher auf den oberen und unteren Polierteller geklebt, wobei die jeweilige Oberfläche des Poliertellers erfindungsgemäß mit einer Flüssigkeit benetzt wird bevor das Poliertuch auf den Poliertellern platziert wird. Beim oberen Polierteller wird zunächst das Poliertuch mit der Flüssigkeit benetzt, bevor das Poliertuch mit dem oberen Polierteller in Kontakt gebracht wird. Die Flüssigkeit, die zwischen Poliertuch und Polierteller dabei eingeschlossen wurde, wird durch leichtes Anpressen zum Rand des Poliertuches bewegt und so entfernt, wobei das Poliertuch besonders bevorzugt mittels mehrerer Bürsten simultan an die Polierteller angepresst wird.To attach the polishing cloths to the upper and lower polishing plates, the polishing cloths are glued to the upper and lower polishing plates, with the respective surface of the polishing plate being wetted with a liquid according to the invention before the polishing cloth is placed on the polishing plates. In the case of the upper polishing pad, the polishing cloth is first wetted with the liquid before the polishing cloth is brought into contact with the upper polishing pad. The liquid that was trapped between the polishing cloth and the polishing plate is moved to the edge of the polishing cloth by lightly pressing it and is thus removed, with the polishing cloth being particularly preferably pressed simultaneously onto the polishing plate by means of several brushes.
Der Erfindung liegt die Beobachtung zugrunde, dass Poliertücher, die auf den Polierteller aufgebracht werden, ohne dass vorher der Polierteller mit einer Flüssigkeit benetzt werden, Probleme bei der Geometrie der polierten Halbleiterscheiben hervorrufen können. Es wird vermutet, dass kleine Lufteinschlüsse zwischen Tuch und Polierteller die beobachteten negativen Einflüsse hervorrufen.The invention is based on the observation that polishing cloths that are applied to the polishing plate without first having a liquid on the polishing plate are wetted, can cause problems in the geometry of the polished semiconductor wafers. It is assumed that small air pockets between the cloth and the polishing pad cause the observed negative influences.
Bei der Doppelseitenpolitur zum Beispiel führt dies dazu, dass sich die Geometrie der polierten Halbleiterscheibe leicht verschlechtert. Insbesondere die Differenz aus vorderseitenbezogenem ZDD (= zweifache Ableitung der Höhe senkrecht von der Medianebene zur Vorderseite der Halbleiterscheibe) und rückseitenbezogenem ZDD ist leicht verschlechtert. Der ZDD beschreibt die mittlere Krümmung am Rand einer Oberfläche der Halbleiterscheibe und ist in SEMI M68-1015 definiert.In the case of double-side polishing, for example, this means that the geometry of the polished semiconductor wafer deteriorates slightly. In particular, the difference between the ZDD related to the front side (=twice the derivation of the height perpendicularly from the median plane to the front side of the semiconductor wafer) and the ZDD related to the rear side is slightly worse. The ZDD describes the mean curvature at the edge of a surface of the semiconductor wafer and is defined in SEMI M68-1015.
Das erfindungsgemäße Verfahren zum Anbringen eines Poliertuches an einen Polierteller in einer Poliermaschine zum Polieren von Halbleiterscheiben umfasst das Benetzen des Poliertellers mit einer Flüssigkeit,
- das in Kontaktbringen des Poliertuches mit dem Polierteller, wobei sich Teile der Flüssigkeit zwischen Polierteller und Poliertuch befinden;
- und das lokale Andrücken des Poliertuches an den Polierteller, so dass die Flüssigkeit zwischen Polierteller und Poliertuch zum Rand des Poliertuches transportiert wird.
- bringing the polishing cloth into contact with the polishing pad with parts of the liquid between the polishing pad and the polishing cloth;
- and the local pressing of the polishing cloth against the polishing plate, so that the liquid between the polishing plate and the polishing cloth is transported to the edge of the polishing cloth.
Die verwendete Flüssigkeit besteht bevorzugt aus Wasser. Ganz besonders bevorzugt wird dem Wasser Isopropanol mit einer Konzentration von nicht weniger als 10 Vol% und nicht meht als 30 Vol% beigefügt.The liquid used preferably consists of water. Isopropanol with a concentration of not less than 10% by volume and not more than 30% by volume is very particularly preferably added to the water.
Bevorzugt werden während des lokalen Andrückens des Poliertuches auf den Polierteller mehrere Bürsten verwendet, um die Flüssigkeit zwischen Polierteller und Poliertuch zum Rand des Poliertuches zu transportieren.Several brushes are preferably used during the local pressing of the polishing cloth onto the polishing plate in order to transport the liquid between the polishing plate and the polishing cloth to the edge of the polishing cloth.
Es hat sich gezeigt, dass es besonders vorteilhaft ist, wenn die Temperatur des Poliertellers beim Anbringen des Poliertuches bevorzugt zwischen 18°C und 48°C eingestellt wird.It has been shown that it is particularly advantageous if the temperature of the polishing plate is preferably set to between 18°C and 48°C when the polishing cloth is attached.
Nach dem Entfernen der Flüssigkeit zwischen Polierteller und Poliertuch wird das Tuch mittels Bürsten (entsprechend Stand der Technik) angepresst. Der Druck, den die Bürsten auf das Poliertuch auf dem Polierteller dabei ausüben beträgt bevorzugt zwischen 1000 Pa und 7500 Pa.After removing the liquid between the polishing plate and the polishing cloth, the cloth is pressed down using brushes (according to the state of the art). The pressure that the brushes exert on the polishing cloth on the polishing plate is preferably between 1000 Pa and 7500 Pa.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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EP22151116.5A EP4212280A1 (en) | 2022-01-12 | 2022-01-12 | Method of applying a polishing cloth to a polishing plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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EP22151116.5A EP4212280A1 (en) | 2022-01-12 | 2022-01-12 | Method of applying a polishing cloth to a polishing plate |
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EP4212280A1 true EP4212280A1 (en) | 2023-07-19 |
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Family Applications (1)
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EP22151116.5A Pending EP4212280A1 (en) | 2022-01-12 | 2022-01-12 | Method of applying a polishing cloth to a polishing plate |
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0208315B1 (en) | 1985-07-12 | 1990-09-26 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH | Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers |
US5510175A (en) | 1993-06-30 | 1996-04-23 | Chiyoda Co., Ltd. | Polishing cloth |
US5916016A (en) | 1997-10-23 | 1999-06-29 | Vlsi Technology, Inc. | Methods and apparatus for polishing wafers |
US20010014570A1 (en) | 2000-02-03 | 2001-08-16 | Wacker Siltronic Gesellschaft For Halbleitermaterialien Ag | Process for producing a semiconductor wafer with polished edge |
DE10239774A1 (en) * | 2002-08-29 | 2003-11-27 | Wacker Siltronic Halbleitermat | Method and apparatus for attaching polishing cloths to the plates of a polishing machine such as for polishing silicon wafers using grooves or ridges to control application of a vacuum |
EP1775068A1 (en) | 2005-10-17 | 2007-04-18 | Fujikoshi Machinery Corp. | Method of adhering polishing pads and jig for adhering the same |
JP2007313587A (en) * | 2006-05-24 | 2007-12-06 | Sumco Techxiv株式会社 | Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth |
US20080102741A1 (en) | 2004-05-05 | 2008-05-01 | Iv Technologies Co., Ltd. | Single-layer polishing pad |
US20080248728A1 (en) | 2007-04-05 | 2008-10-09 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing polishing pad, polishing pad, and method for polishing wafer |
US20140206261A1 (en) | 2012-12-04 | 2014-07-24 | Siltronic Ag | Method for polishing a semiconductor wafer |
WO2018086912A1 (en) | 2016-11-10 | 2018-05-17 | Siltronic Ag | Method for two-sided polishing of a semiconductor wafer |
DE102019213657A1 (en) | 2019-09-09 | 2021-03-11 | Siltronic Ag | Method and device for pressing a polishing cloth |
-
2022
- 2022-01-12 EP EP22151116.5A patent/EP4212280A1/en active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0208315B1 (en) | 1985-07-12 | 1990-09-26 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH | Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers |
US5510175A (en) | 1993-06-30 | 1996-04-23 | Chiyoda Co., Ltd. | Polishing cloth |
US5916016A (en) | 1997-10-23 | 1999-06-29 | Vlsi Technology, Inc. | Methods and apparatus for polishing wafers |
US20010014570A1 (en) | 2000-02-03 | 2001-08-16 | Wacker Siltronic Gesellschaft For Halbleitermaterialien Ag | Process for producing a semiconductor wafer with polished edge |
DE10239774A1 (en) * | 2002-08-29 | 2003-11-27 | Wacker Siltronic Halbleitermat | Method and apparatus for attaching polishing cloths to the plates of a polishing machine such as for polishing silicon wafers using grooves or ridges to control application of a vacuum |
US20080102741A1 (en) | 2004-05-05 | 2008-05-01 | Iv Technologies Co., Ltd. | Single-layer polishing pad |
EP1775068A1 (en) | 2005-10-17 | 2007-04-18 | Fujikoshi Machinery Corp. | Method of adhering polishing pads and jig for adhering the same |
JP2007313587A (en) * | 2006-05-24 | 2007-12-06 | Sumco Techxiv株式会社 | Polishing method using abrasive cloth, humidification for abrasive cloth, heating container, polishing device using abrasive cloth, and abrasive cloth |
US20080248728A1 (en) | 2007-04-05 | 2008-10-09 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing polishing pad, polishing pad, and method for polishing wafer |
US20140206261A1 (en) | 2012-12-04 | 2014-07-24 | Siltronic Ag | Method for polishing a semiconductor wafer |
WO2018086912A1 (en) | 2016-11-10 | 2018-05-17 | Siltronic Ag | Method for two-sided polishing of a semiconductor wafer |
DE102019213657A1 (en) | 2019-09-09 | 2021-03-11 | Siltronic Ag | Method and device for pressing a polishing cloth |
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