EP4162096A1 - Atomic layer deposition head and method - Google Patents

Atomic layer deposition head and method

Info

Publication number
EP4162096A1
EP4162096A1 EP21733577.7A EP21733577A EP4162096A1 EP 4162096 A1 EP4162096 A1 EP 4162096A1 EP 21733577 A EP21733577 A EP 21733577A EP 4162096 A1 EP4162096 A1 EP 4162096A1
Authority
EP
European Patent Office
Prior art keywords
slit
elongate
feed
ald
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21733577.7A
Other languages
German (de)
French (fr)
Inventor
Marcel Maurice Hemerik
Marinus Adrianus Elizabeth VAN DE VELDEN
Erik Antonius Franciscus KREMERS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sald Ip BV
Original Assignee
Sald Ip BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sald Ip BV filed Critical Sald Ip BV
Publication of EP4162096A1 publication Critical patent/EP4162096A1/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45544Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45576Coaxial inlets for each gas
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595Atmospheric CVD gas inlets with no enclosed reaction chamber

Definitions

  • the present invention relates to an atomic layer deposition head. More in general, the invention relates to deposition of thin -film materials, such as apparatus for atomic layer deposition.
  • Atomic layer deposition is a known technique for depositing a thin film of a process material onto a substrate. Advances have been made in recent years in improving ALD. However, certain disadvantages remain.
  • a first problem often encountered when practicing ALD is that a gas fed from an atomic layer deposition head towards a substrate not only is deposited onto the substrate, but also contaminates the head itself. Therefore, cleaning of the head can be required at a regular basis.
  • an atomic layer deposition, ALD, head having an output face including a first elongate feed sht for outputting a first gas therethrough towards a substrate.
  • the first gas can be a first process gas.
  • the first elongate feed slit allows for depositing a first material, e.g. contained in or formable by the first gas, to be deposited along the length of the first elongate feed slit.
  • the substrate and the head are moved relative to each other, such as in a direction perpendicular to the longitudinal direction of the first elongate feed sht.
  • an area on the substrate having one dimension substantially corresponding to the length of the first feed slit can be covered with a layer of the material.
  • the head includes an input face including a first feed opening for inputting the first gas into the head.
  • a first feed flow channel extends from the first feed opening to the first elongate feed slit.
  • the first gas can be fed from the first feed opening via the first feed flow channel to the first elongate feed slit.
  • the first feed opening can have a compact cross section, such as a circular cross section, for easy connection to a feed line.
  • outflow of the first gas out of the first elongate feed slit is preferably uniform along the length of the slit.
  • the head includes in the first feed flow channel a first elongate chamber along the first elongate feed slit.
  • the chamber extends along the entire length of the slit.
  • the head can include a first elongate chamber extending in the longitudinal direction of the first elongate feed slit.
  • the first elongate chamber can extend along the entire length of the first elongate feed slit.
  • the first elongate chamber can open towards the first elongate feed slit along the entire length of the first elongate feed slit.
  • the chamber has a width (perpendicular to the longitudinal direction of the slit) that is wider than a width of the slit.
  • the chamber includes a flow resistance material, such as a porous material, for creating a back pressure for the first gas fed into the chamber.
  • a flow resistance material such as a porous material
  • the flow resistance material extends along the entire length of the chamber.
  • the flow resistance material can extend along the entire length of the first elongate feed slit.
  • the flow resistance material is in contact with side walls of the chamber to prevent gas from bypassing the flow resistance material.
  • the backpressure generated by the flow resistance material aids in making the outflow from the slit uniform along its length.
  • the ALD head includes a monolithic output section including the output face and walls of the first elongate chamber.
  • the output face, the chamber, and the first elongate feed slit can be monolithic.
  • the monohthic output section can e.g. be 3D-printedfrom stainless steel. It has been found that such monolithic output section can easily be cleaned, e.g. in an ultrasonic bath. Also, the monolithic output section provides the advantage that the geometry of the slit can be mechanically more stable than in designs where the slit is formed between separate mechanical parts of the output section.
  • the flow resistance material providing the backpressure can assist in rendering dimensional accuracy of the slit, such as dimensional accuracy of the width of the slit, less important for proper layer deposition.
  • the lesser requirements on dimensional accuracy can enhance the possibilities for monohthically forming the output section, e.g. by 3D printing.
  • the feed slit can be chosen having a larger width than when no flow resistance material is used. Such wider width can aid in allowing easy cleaning and/or manufacturing of the output section.
  • the feed slit can e.g. have a width chosen in the interval of 50 pm up to 2000 pm, such as in the interval of 100 pm up to 500 pm, e.g. about 250 pm.
  • the flow resistance material such as the porous material
  • the flow resistance material is a 3-dimensional, 3D, printed flow resistance material, such as a 3D printed porous material.
  • This provides the advantage that the flow resistance material can easily be manufactured from a material well suited for cleaning, such as stainless steel, or another metal.
  • the 3D printed flow resistance material is unitary with the output face.
  • the flow resistance material can be manufactured as a single unit with the output face.
  • the output face, the chamber, the first elongate feed sht and the flow resistance material can be monolithic.
  • the flow resistance material can include holes, channels or pores through an otherwise solid material.
  • the flow resistance material can include plates or platelets with holes or channels in between.
  • the flow resistance material can include globes, cubes or differently shaped objects with interstices therebetween.
  • the flow resistance material can provide a friction factor for gaseous material passing therethrough that is greater than 1 10 2 , thereby providing back pressure.
  • the friction factor is between 1 10 4 and 1 10 8 , such as between 1 10 5 and 5 10 6 .
  • the back pressure can e.g. promote equahzation of pressure where the respective gas exits the feed slit.
  • the ALD head includes a monolithic input section including the input face and ducts of the first feed flow channel extending from the first infeed opening towards the first elongate chamber.
  • the input section can form a monolithic section, wherein the first feed flow channel can transform from a cross section according to the first feed opening to a cross section that connects to the first elongate feed slit.
  • the input section and the output section can both be monolithic. This provides the advantage that a very simple structure is provided.
  • the ALD head includes at least one elongate return sht for removing gas from the output face.
  • the elongate return slit can be arranged for sucking gas away from the substrate.
  • the ALD head can include an output opening for exhausting gas from the head, in communication with the at least one elongate return slit, and a return flow channel extending from the at least one elongate return slit to the output opening.
  • the monolithic output section includes the at least one elongate return slit.
  • the first elongate feed slit and the elongate return slit can be part of the same monolithic output section.
  • the monolithic input section includes the output opening and ducts of the return flow channel. Hence, the first feed opening and the output opening can form part of the same monolithic input section.
  • the at least one return slit is positioned substantially parallel to the first elongate feed slit. Hence, gas can be removed effectively.
  • the at least one return slit circumscribes the first elongate feed slit. This provides the advantage that all around the first elongate feed slit the gas fed to the substrate, but not deposited into a layer, can be removed. Hence interaction of the ALD head with adjacent ALD heads can be reduced which results in more effective operation and/or less contamination.
  • the ALD head includes at least one second elongate feed sht in the output face for outputting a second gas therethrough towards the substrate.
  • the second gas can be purging gas, such as N2.
  • the ALD head includes a second feed opening for inputting the second gas into the head; and a second feed flow channel extending from the second feed opening to the at least one second elongate feed slit.
  • the second gas can be a purging gas for reducing influence of the ALD head onto neighboring structures, such as neighbouring ALD heads.
  • the head includes in the second feed flow channel a second elongate chamber along the second elongate feed slit, wherein the second elongate chamber includes a 3D printed flow resistance material, such as a porous material, as described in view of the first elongate feed slit.
  • a 3D printed flow resistance material such as a porous material
  • the monohthic output section includes the at least one second elongate feed slit.
  • the first elongate feed slit, the at least one second elongate feed slit, and optionally the elongate return slit can be part of the same monohthic output section.
  • the monohthic input section includes the second feed opening and ducts of the second feed how channel. Hence, the first feed opening, the second feed opening, and optionally the output opening can form part of the same monolithic input section.
  • the at least one second feed slit is positioned substantially parallel to the first elongate feed slit.
  • the at least one second elongate feed slit circumscribes the first elongate feed slit.
  • the second gas such as a purging gas
  • the at least one elongate return slit is positioned between the first elongate feed slit and the at least one second elongate feed sht.
  • the return slit can return both the first gas fed by the first elongate feed slit and the second gas fed by the second elongate feed slit.
  • the ALD head includes at least one second elongate return slit for removing gas from the output face.
  • the at least one second elongate return sht can be included in the monolithic output section.
  • the ALD head can include a second output opening for exhausting gas from the head, in communication with the at least one second elongate return slit, and a second return flow channel extending from the at least one second elongate return slit to the output opening.
  • the monolithic input section can include the second output opening and ducts of the second return flow channel.
  • the at least one second return slit is positioned substantially parallel to the first elongate feed slit.
  • the at least one second return slit circumscribes the second elongate feed slit.
  • the second gas such as the purging gas
  • the ALD head is monohthic.
  • thee input face, ducts of the first feed flow channel extending from the first infeed opening towards the first elongate chamber, the first elongate chamber, the output face, and the first elongate feed slit form a monolithic structure.
  • the flow resistance material is part of the monolithic structure.
  • ducts of the second feed flow channel extending from the second infeed opening towards the second elongate chamber, the second elongate chamber, the output face, and the second elongate feed slit form part of the monolithic structure.
  • the elongate return slit, return flow channel and the output opening form part of the monolithic structure.
  • the second elongate return slit, second return flow channel and the second output opening form part of the monolithic structure.
  • the first feed opening and the second feed opening are positioned symmetrically relative to an axis through the center of the head. This provides the advantage that rotation of the head, e.g. over 180 degrees, around the axis switches the positions of the first and second feed openings, thus allowing simple changing of the gas fed to the first and second feed openings.
  • the first feed opening is positioned such that rotation of the head, e.g. over 180 degrees, around the axis can be used for selectively connecting the first feed opening to a first supply line or to a second supply line, e.g. carrying mutually different gases.
  • the second feed opening may be positioned such that rotation of the head, e.g. over 180 degrees, around the axis connects the second feed opening to a third supply line, e.g. carrying purge gas, regardless of the rotational position.
  • an ALD head unit including two or more ALD heads as described hereinabove.
  • the ALD heads can e.g. be mounted side by side.
  • the ALD heads can be mounted such that the respective first elongate feed slits of the ALD heads are positioned substantially parallel.
  • a first gas can be provided to a first ALD head of the ALD head unit, such as a first process gas for depositing a first material, e.g. contained in or formable by the first gas, onto a substrate.
  • A, e.g. different, third gas can be provided to a second ALD head of the ALD head unit, such as a, e.g. different, second process gas for depositing a, e.g. different, second material, e.g. contained in or formable by the third gas, onto a substrate.
  • A, e.g. different, fourth gas can be provided to a third ALD head of the ALD head unit, and so forth.
  • the output sections of the respective ALD heads of the ALD head unit form one unitary part.
  • an easy to clean ALD head unit can be provided arranged for providing multiple (e.g. different, gases to a substrate, e.g. simultaneously.
  • the respective ALD heads of the ALD head unit form one unitary part.
  • an atomic layer deposition, ALD, head unit having an output face including a first elongate feed slit for outputting a first process gas therethrough towards a substrate and a second elongate feed sht for outputting a second process gas therethrough towards a substrate.
  • the first and second process gasses can be identical or different.
  • the ALD head unit includes at least a first and a second elongate purge slit in the output face between the first elongate feed slit and the second elongate feed sit for outputting a purge gas therethrough towards the substrate.
  • the ALD head unit is arranged for supplying two, e.g. different, process gases to the substrate.
  • the two process gasses can be provided to the substrate alternately or simultaneously.
  • At least two elongate purge slits are positioned between two consecutive elongate feed slits.
  • the first elongate feed slit and the nearest second elongate feed slit can be positioned side-by-side, i.e. the first feed slit has a direction of elongation that is substantially, e.g.
  • the first elongate purge slit is positioned substantially parallel to the first elongate feed sht, and/or the second elongate purge slit is positioned substantially parallel to the second elongate feed slit.
  • the first elongate purge slit circumscribes the first elongate feed slit, and/or the second elongate purge slit circumscribes the second elongate feed slit.
  • the output face includes at least one elongate return sht for removing gas from the output face.
  • the elongate return slit can be arranged for sucking gas away from the substrate.
  • the ALD head unit can include an output opening for exhausting gas from the head unit, in communication with the at least one elongate return slit, and a return flow channel extending from the at least one elongate return slit to the output opening.
  • the output face includes a first elongate return slit positioned between the first elongate feed slit and the first elongate purge sht.
  • the first elongate return slit can be positioned substantially parallel to the first elongate feed slit.
  • the first elongate return slit can circumscribe the first elongate feed slit.
  • the output face includes a second elongate return slit positioned between the first elongate purge slit and the second elongate purge sht.
  • the second elongate return slit can be positioned substantially parallel to the first elongate purge slit.
  • the second elongate return slit can circumscribe the first elongate purge slit.
  • the output face includes a third elongate return slit positioned between the second elongate feed slit and the second elongate purge slit, wherein optionally the third elongate return slit is positioned substantially parallel to the second elongate feed slit, wherein optionally the third elongate return slit circumscribes the second elongate feed slit.
  • the output face includes a fourth elongate return slit positioned between the second elongate purge slit and the first elongate purge sht, wherein optionally the fourth elongate return slit is positioned substantially parallel to the second elongate purge slit, wherein optionally the fourth elongate return slit circumscribes the second elongate purge slit.
  • the ALD head unit includes a first ALD head comprising the first elongate feed sht and the first and a second elongate purge slit, and a second ALD head including the second elongate feed slit and the second elongate purge slit.
  • the ALD head unit can have a modular structure, each ALD head forming a module having an elongate feed slit for process gas and a purge slit for purge gas.
  • the purge slit circumscribes the elongate feed slit.
  • the modular ALD head unit can be provided wherein two purge slits are provided between each two adjacent elongate feed shts.
  • a first return slit is provided between the elongate feed slit and the purge sht.
  • the first return slit circumscribes the elongate feed slit.
  • a second return slit is provided in the ALD head.
  • the second return slit circumscribes the elongate feed sht.
  • a return slit such as the second return slit, is formed by a gap between the first ALD head and the second ALD head.
  • the space between two adjacent ALD heads can provide for leakage of ambient gas between the two heads towards the output face and/or the substrate in view of a reduced pressure between the output face and the substrate due to suction at return gas slits.
  • the output face includes one or more protrusions and/or depressions.
  • the protrusions can be elongate protrusions, such as ridges.
  • the ridges can e.g. be substantially parallel to the elongate feed slit.
  • the depressions can be elongate depressions, such as grooves.
  • the grooves can e.g. be substantially parallel to the elongate feed slit.
  • the protrusions and/or depressions provide the advantage that gas flowing out of the elongate feed sht and between the output face and the substrate is affected by the presence of the protrusions and/or depressions.
  • the protrusions and/or depressions cause more efficient interaction of the gas with the substrate.
  • the protrusions and/or depressions provide some turbulence in the flow of gas between the output face and the substrate, or at least render said flow less laminar. It will be appreciated that many cross sectional shapes can be conceived for the protrusions and/or depressions, such as rectangular, triangular, hemispherical, etc.. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the slit.
  • the protrusions can e.g. be formed as bumps on the output face. The bumps, or the ridges, can be arranged in a regular or irregular pattern.
  • the depressions need not form grooves in a longitudinal direction of the slit.
  • the depressions can e.g. be formed as dents on the output face.
  • the dents, or the grooves, can be arranged in a regular or irregular pattern.
  • a distance between a return slit adjacent to the first elongate feed slit and the first elongate feed slit on one side is different from a distance between a return slit adjacent to the first elongate feed slit on the other side and the first elongate feed slit.
  • a distance between an adjacent upstream return slit and the first elongate feed slit is different from a distance between an adjacent downstream return slit and the first elongate feed slit.
  • a distance between an adjacent upstream return slit and the first elongate feed slit is smaller than a distance between an adjacent downstream return slit and the first elongate feed slit.
  • a distance between an adjacent upstream return slit and the second elongate feed slit is different from a distance between an adjacent downstream return slit and the second feed slit.
  • a distance between an adjacent upstream return slit and the second elongate feed slit is smaller than a distance between an adjacent downstream return slit and the second feed slit.
  • the ALD head unit can include a monolithic, e.g. 3D printed, output section including the output face with the first elongate feed slit and the first elongate purge slit.
  • the monolithic output section can include the at least one elongate return slit.
  • the ALD head unit includes an input section including a first feed opening for inputting the first process gas into the head unit and a second feed opening for inputting the purge gas into the head unit.
  • the input section can include a first feed flow channel extending from the first feed opening towards the first elongate feed slit, and a second feed flow channel extending from the second feed opening towards the first elongate purge slit.
  • the input section can be monohthic, such as 3D printed.
  • the monohthic input section includes an output opening for exhausting gas from the head, in communication with the at least one elongate return slit and ducts of a return flow channel extending from the at least one elongate return slit to the output opening.
  • the ALD head unit includes a first elongate chamber along the first elongate feed slit, wherein the first elongate chamber includes a flow resistance material.
  • the flow resistance material can be a, e.g. 3D printed, porous material.
  • the ALD head unit includes a second elongate chamber along the second elongate feed slit, wherein the at least one second elongate chamber includes a flow resistance material.
  • the flow resistance material can be a, e.g. 3D printed, porous material.
  • the, e.g. 3D printed, porous material is unitary with the output face.
  • a return slit such as the second return slit, is formed by a gap between the first ALD head and the second ALD head.
  • an ALD head unit including a first ALD head comprising a first elongate feed slit for outputting a first process gas therethrough towards a substrate and a second ALD head including a second elongate feed slit for outputting a second process gas therethrough towards a substrate, wherein a return slit for removing gas from the substrate is formed by a gap between the first ALD head and the second ALD head.
  • return slit can advantageously also be put to practice with ALD heads not including purge shts or further return slits.
  • an ALD head having an output face comprising an elongate feed slit for outputting a process gas therethrough towards a substrate, wherein the output face includes one or more protrusions and/or depressions.
  • the protrusions and/or depressions can be arranged adjacent the feed slit.
  • the protrusions and/or depressions can be arranged between the feed slit and a return slit.
  • the protrusions can be elongate protrusions, such as ridges.
  • the ridges can e.g. be substantially parallel to the elongate feed slit.
  • the depressions can be elongate depressions, such as grooves.
  • the grooves can e.g.
  • the protrusions and/or depressions can be substantially parallel to the elongate feed slit. It will be appreciated that many cross sectional shapes can be conceived for the protrusions and/or depressions, such as rectangular, triangular, hemispherical, etc. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the slit.
  • the protrusions can e.g. be formed as bumps on the output face.
  • the bumps, or the ridges can be arranged in a regular or irregular pattern.
  • the depressions need not form grooves in a longitudinal direction of the slit.
  • the depressions can e.g. be formed as dents on the output face.
  • the dents, or the grooves can be arranged in a regular or irregular pattern.
  • the elongate feed slit can be positioned on a recessed portion of the output face which is recessed with respect to a remainder of the output face.
  • the recessed portion can form recessed cavity surrounding the elongate feed slit.
  • the protrusions or depressions can be formed on the recessed portion of the output face.
  • an ALD head or ALD head unit having an output face comprising an elongate feed slit for outputting a process gas therethrough towards a substrate and two return slits, one on either side of the elongate feed sht, wherein a distance between the one return sht and the elongate feed slit is different from a distance between the other return slit and the elongate feed slit.
  • a distance between an upstream return slit and the elongate feed slit is smaller than a distance between a downstream return slit and the elongate feed sht.
  • an ALD head unit including a plasma deposition head and at least one ALD head as described hereinabove.
  • a first gas such as a first process gas
  • the substrate can also be treated by a plasma, e.g. simultaneously.
  • an output section of the plasma deposition head forms a unitary part with the output section of the at least one ALD head.
  • the plasma deposition head forms a unitary part with the at least one ALD head.
  • an atomic layer deposition apparatus including one or more ALD heads as described hereinabove or one or more ALD head units as described hereinabove.
  • the apparatus can e.g. include two or more such ALD heads stacked side-by-side.
  • the ALD heads may be joined together such that their respective output faces form a planar surface.
  • the ALD heads may be joined together such that their respective output faces form a curved surface, such as (part of) an inner or outer surface of a cylinder. Thereto the respective output face of each ALD head may be curved.
  • a ninth aspect is provided a method for depositing a film of material onto a substrate, including moving an ALD head or an ALD head unit as described herein and a substrate relative to each other, while flowing a gas including the material through the first elongate feed slit towards the substrate.
  • a method of manufacturing a) a photovoltaic element, b) a battery, c) a display, d) flexible electronics, or e) packaging materials including depositing a film of material, such as an electrically conducting material, a dielectric material or a barrier material, onto a substrate according to such method for depositing.
  • a film of material such as an electrically conducting material, a dielectric material or a barrier material
  • Figure 1 shows a schematic representation of an example of an atomic layer deposition, ALD, head
  • Figure 2 shows a schematic representation of an example of an ALD head
  • Figure 3 shows a schematic representation of an example of an ALD head
  • Figure 4 shows a schematic representation of an example of an ALD head
  • Figure 5 shows a schematic representation of an example of an ALD head
  • Figure 6 shows a schematic representation of an example of an ALD head
  • Figure 7 shows a schematic representation of an example of an ALD head
  • Figure 8 shows a schematic representation of an example of an ALD head
  • Figure 9 shows two views of a schematic representation of an example of an ALD head
  • Figure 10 shows a schematic representation of an example of an ALD head
  • Figure 11 shows a schematic representation of an example of an ALD head
  • Figure 12 shows a schematic representation of an example of an ALD head
  • Figure 13 shows a schematic representation of an example of an ALD head unit
  • Figure 14 shows a schematic representation of an example of an ALD head unit
  • Figure 15 shows a schematic representation of an example of an ALD head unit
  • Figure 16 shows a schematic representation of an example of an ALD head unit
  • Figure 17 shows a schematic representation of an example of an ALD head unit
  • Figure 18 shows a schematic representation of an example of an ALD head unit
  • Figure 19 shows a schematic representation of an example of an ALD head
  • Figure 20 shows a schematic representation of an example of an ALD head
  • Figure 21 shows a schematic representation of an example of an ALD head
  • Figure 22 shows a schematic representation of an example of an ALD head
  • Figure 23 shows an example of a method.
  • Figures 1 and 2 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1.
  • Figure 2 shows a longitudinal cross section of the head 1,
  • Figure 1 a cross section perpendicular to the longitudinal direction of the head 1.
  • the ALD head 1 is arranged for depositing an atomic layer of a material onto a substrate 2.
  • the ALD head 1 includes an output face 4 and an input face 6.
  • the output face 4 includes a first elongate feed slit 8.
  • the input face 6 includes a first feed opening 10.
  • the first feed opening 10 can have a compact cross section, such as a circular cross section, for easy connection to a feed line (not shown).
  • a first feed flow channel 12 extends from the first feed opening 10 to the first elongate feed sht 8.
  • a first elongate chamber 14 is positioned along the first elongate feed slit 8.
  • the chamber 14 extends along the entire length of the first elongate feed slit 8.
  • the chamber 14 has a width, measured perpendicular to the longitudinal direction of the first feed slit 8, that is wider than a width of the first feed slit 8.
  • the head 1 includes an output section 16.
  • the output section 16 includes the output face 4 and walls 18 of the first elongate chamber 14.
  • the output 16 section is monohthic.
  • the head 1 includes an input section 20.
  • the input section 20 includes the input face 6 and at least a part of the first feed flow channel 12.
  • the input section 20 is monohthic. It is possible that the input section 20 forms a unitary part with the output section 16.
  • the ALD head 1 can be monohthic.
  • a first gas such as a first process gas is inputted into the first fed opening 10.
  • the first gas travels through the first feed flow channel 12 and through the first elongate chamber 14 to the first elongate feed slit 8.
  • the first elongate feed slit 8 is arranged for, in use, outputting the first gas therethrough towards the substrate 2.
  • the first elongate feed slit 8 allows for depositing a first material, e.g. contained in or formable by the first gas, to be deposited onto the substrate 2 along the length of the first elongate feed slit 8.
  • outflow of the first gas out of the first elongate feed slit 8 is preferably uniform along the length of the slit.
  • the head 1 includes in the first elongate chamber 14 along the first elongate feed slit a flow resistance material 22 for creating a back pressure for the first gas fed into the chamber 14.
  • the flow resistance material 22 is a porous material.
  • the flow resistance material 22 extends along the entire length of the chamber 14.
  • the flow resistance material 22 is in contact with the side walls 18 of the chamber 14 to prevent gas from bypassing the flow resistance material 22.
  • the backpressure generated by the flow resistance material aids in making the outflow from the first feed slit 8 uniform along its length.
  • the ALD head includes the monohthic output section 16 including the output face 4 and walls 18 of the first elongate chamber 14.
  • the output face 4, the chamber 14, and the first elongate feed slit 8 can be monolithic.
  • the monolithic output section 16 can e.g. be 3D-printed from a metal, such as stainless steel. It has been found that such monolithic output section can easily be cleaned, e.g. in an ultrasonic bath.
  • the flow resistance material 22 is a 3-dimensional, 3D, printed flow resistance material, such as a 3D printed porous material. This provides the advantage that the flow resistance material 22 can easily be manufactured from a material well suited for cleaning, such as stainless steel, or another metal.
  • the 3D printed flow resistance material 22 is unitary with the output section 16.
  • the flow resistance material 22 can be manufactured as a single unit with the output section 16.
  • the head 1 can be manufactured as a single unit including the flow resistance material 22.
  • the substrate 2 and/or the head 1 can be mounted so as to be movable, such that the substrate 2 and the head 1 can be moved relative to each other, such as in a direction A perpendicular to the longitudinal direction of the first elongate feed slit 8.
  • an area on the substrate 2, e.g. having one dimension substantially corresponding to the length of the first feed slit 8, can be covered with a layer of the first material.
  • Figure 3 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1.
  • the head 1 of Figure 3 is similar to the head of Figures 1 and 2.
  • the head 1 includes an elongate return slit 24.
  • the elongate return slit 24 is arranged for, in use, removing gas from the output face 4 and/or the substrate 2.
  • the return slit can be connected to a suction device.
  • the suction device can provide a reduced pressure at the return slit for sucking away gas from the output face 4 and/or the substrate 2.
  • the head 1 here includes an output opening 26 for exhausting gas from the head 1, in communication with the elongate return slit 24.
  • FIG. 3 return flow channels 28 extending from the elongate return slit 24 to the output opening 26 are shown.
  • the monolithic output section 16 in this example includes the elongate return sht 24.
  • the monolithic input section 20 in this example includes the output opening 26 and ducts of the return flow channel 28.
  • Figure 4 shows a bottom view of the ALD head 1 of Figure 3.
  • the return slit 24 is positioned such that large portions of the return slit 24 are parallel to the first elongate feed slit 8. Hence, gas can be removed effectively.
  • the return slit 24 circumscribes the first elongate feed slit 8. This provides the advantage that all around the first elongate feed sht 8 the gas fed to the substrate 2, but not deposited into a layer, can be removed.
  • Figure 5 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1.
  • the head 1 of Figure 5 is similar to the head of Figures 3 and 4.
  • the head 1 includes a second elongate feed slit 30 in the output face 4 for outputting a second gas therethrough towards the substrate 2.
  • the second gas can be a purging gas, such as N2.
  • the ALD head 1 includes a second feed opening 32 for inputting the second gas into the head 1.
  • a second feed flow channel 34 extends from the second feed opening 32 to the second elongate feed slit 30.
  • the head 1 can be used for providing a first gas and a different, second gas to the substrate2, e.g. simultaneously.
  • the second gas can be a purging gas for reducing influence of the head 1 onto neighboring structures, such as neighboring ALD heads.
  • the head 1 includes in the second feed flow channel 34 a second elongate chamber 35 along the second elongate feed slit 30.
  • the second elongate chamber 35 here includes a flow resistance material 38, e.g. a 3D printed flow resistance material such as a porous material.
  • the monolithic output section 16 includes the second elongate feed slit 30.
  • the first elongate feed slit 8 the second elongate feed slit 30, and the elongate return slit 24 form part of the same monolithic output section 16.
  • the monolithic input section 20 includes the second feed opening 32 and ducts of the second feed flow channel 34.
  • the first feed opening 10 the second feed opening 32, and the output opening 26 form part of the same monolithic input section 20.
  • Figure 6 shows a bottom view of the ALD head 1 of Figure 5.
  • the return slit 24 is positioned such that large portions of the return slit 24 are parallel to the first elongate feed slit 8.
  • the return slit 24 circumscribes the first elongate feed slit 8.
  • the second feed slit 30 is positioned such that large portions of the second elongate feed slit 30 are parallel to the first elongate feed slit 8 and the return slit 24.
  • the second elongate feed sit 30 circumscribes the first elongate feed slit 8 and the return slit 24.
  • Figure 7 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1.
  • the head 1 of Figure 7 is similar to the head of Figures 5 and 6.
  • the head 1 includes a second elongate return slit 36.
  • the second elongate return slit 36 is arranged for, in use, removing gas from the output face 4 and/or the substrate 2.
  • the head 1 here includes a second output opening 38 for exhausting gas from the head 1, in communication with the second elongate return slit 36. It will be appreciated that the second output opening 38 may be the same as the output opening 26.
  • second return flow channels 40 extending from the second elongate return slit 36 to the second output opening 38 are shown.
  • the monolithic output section 16 in this example includes the second elongate return slit 36.
  • the monolithic input section 20 in this example includes the second output opening 38 and ducts of the second return flow channel 40.
  • Figure 8 shows a bottom view of the ALD head 1 of Figure 7.
  • the second return slit 36 is positioned such that large portions of the second return slit 36 are parallel to the second elongate feed sht 30. Hence, gas can be removed effectively.
  • the second return slit 36 circumscribes the first elongate feed slit 8, the return sht 24 and the second elongate feed slit 30. This provides the advantage that all around the second elongate feed sht 30 the gas fed to the substrate 2 can be removed.
  • Figure 9 shows two isometric views of an example of an ALD head 1 generally according to Figures 7 and 8.
  • Three cross sections are indicated.
  • Cross section AA is shown in Figure 10.
  • Cross section BB is shown in Figure 11.
  • Cross section CC is shown in Figure 12.
  • the entire shown ALD head 1 is monolithic.
  • the entire ALD head is monolithically 3D printed, e.g. from a metal, such as stainless steel.
  • the head 1 includes two second feed openings 32. These two second feed openings 32 are in mutual connection, allowing gas feed, such as purge gas feed, to be selectively inputted into one of the two openings 32 or both openings simultaneously.
  • gas feed such as purge gas feed
  • the first feed opening 10 is circular.
  • the first feed flow channel 12 starts with a circular cross section and mouths into the first elongate chamber 14 with a generally rectangular cross section. It can also be seen that the return flow channel 28 and the second return flow channel 40 connect to a plenum 44. In the cross section AA shown in Figure 10 the first feed flow channel 12 passes through the plenum 44. Walls 46 separate the first feed flow channel 12 from the plenum 44.
  • the second feed opening 32 is circular.
  • the second feed flow channel 34 starts with a circular cross section and bifurcates and mouths into the second elongate chamber 35.
  • the second feed flow channel 34 passes through the plenum 44.
  • Walls 48 separate the second feed flow channel 34 from the plenum 44.
  • the output opening 26 is circular.
  • the return flow channel 26 starts with a circular cross section and mouths into the plenum 44.
  • Figures 13 and 14 show schematic representations of an example of an ALD head unit 100.
  • the ALD head unit includes a first ALD head 1A and a second ALD head IB.
  • the heads 1A and IB show schematic representations of an example of an ALD head unit 100.
  • the ALD head unit includes a first ALD head 1A and a second ALD head IB.
  • the heads 1A and IB show schematic representations of an example of an ALD head unit 100.
  • the ALD head unit includes a first ALD head 1A and a second ALD head IB.
  • the heads 1A and IB are drawn at a small distance for clarity. It will be appreciated that in practice the heads 1A and IB can abut against each other.
  • the first ALD head 1A is according Figures 7 and 8.
  • the second ALD head IB is according Figures 7 and 8.
  • the first ALD head 1A can be an ALD head as described in view of any of Figures 1-12
  • the second ALD head IB can be an ALD head as described in view of any of Figures 1-12.
  • the output sections are shown.
  • a first gas such as a first process gas is fed into the head 1A and out of the first first elongate feed slit 8A towards the substrate 2.
  • a second gas such as a purge gas is fed into the heads 1A and IB and out of the second elongate feed slits 30A, 30B towards the substrate 2.
  • a third gas such as a second process gas is fed into the head IB and out of the second first elongate feed slit 8B towards the substrate 2.
  • R gas is sucked away from the substrate through the first and second return slits 24A, 24B, 36A, 36B.
  • the ALD head unit 100 can include more than two ALD heads as described in view of any of Figures 1-12. Thus, more than two process gasses can be provided to the substrate 2 using the ALD head unit 100.
  • the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2.
  • the first first feed slit 8 A forms a first elongate process feed sht
  • the second first feed slit 8B forms a second elongate process feed slit.
  • a first second feed slit 30A and a second second feed slit 30B are placed between the first first feed slit 8A and the second first feed slit 8B .
  • the first second feed slit 30A forms a first elongate purge slit
  • the second second feed slit 30B forms a second elongate purge slit.
  • the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B.
  • two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B.
  • the first first return slit 24A forms a first return slit
  • the first second return slit 36A forms a second return slit
  • the second first return slit 24B forms a third return slit
  • the second second return slit 36B forms a fourth return slit.
  • the ALD head unit 100 can include a plasma deposition head as known in the art.
  • the ALD head unit 100 can be made suitable both for atomic layer deposition and plasma treatment of the substrate 2.
  • Figures 15, 16 and 17 show schematic representations of an example of an ALD head unit 100.
  • the ALD head unit includes a first ALD head 1A and a second ALD head IB.
  • Figure 15 shows a cross sectional view. For clarity only the output sections are shown.
  • a first gas such as a first process gas is fed into the head 1A and out of the first first elongate feed sht 8A towards the substrate 2.
  • a second gas such as a purge gas is fed into the heads 1A and IB and out of the second elongate feed slits 30A, 30B towards the substrate 2.
  • a third gas such as a second process gas is fed into the head IB and out of the second first elongate feed slit 8B towards the substrate 2.
  • the ALD head unit 100 allows supplying of a first and a, optionally different, second process gas to the substrate 2.
  • R gas is sucked away from the substrate through the first and second return slits 24A, 24B, 36A, 36B, 36C.
  • the second return slits 36C is formed by a single (joint) second return slit between the heads 1A and IB.
  • the second return slit 36C is formed by a gap between the heads 1A and IB.
  • the heads 1A and IB are, at least substantially, symmetrical to the effect that the second return slit 36A is formed as a gap between the first head 1A and a first end structure 37A.
  • the second return slit 36B is formed as a gap between the second head IB and a second end structure 37B.
  • the ALD head unit 100 can include more than two ALD heads. Then the second return slits between two adjacent heads can each be formed as a gap between said two adjacent heads.
  • the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2.
  • the first first feed slit 8 A forms a first elongate process feed sht
  • the second first feed slit 8B forms a second elongate process feed slit.
  • a first second feed slit 30A and a second second feed slit 30B are placed between the first first feed slit 8A and the second first feed slit 8B .
  • the first second feed slit 30A forms a first elongate purge slit
  • the second second feed slit 30B forms a second elongate purge slit.
  • the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B.
  • two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B.
  • Figure 16 shows an example of a bottom view of an ALD head unit including a first ALD head 1A and a second ALD head IB.
  • the feed slits and return slits are straight slits.
  • the second return slit 36C is formed by a gap between the heads 1A and IB.
  • the heads 1A, IB include protrusions 39 A, 39B.
  • the protrusions allow for the gap between the heads 1A, IB to have a predetermined width.
  • the protrusions allow for a reduced pressure to be maintained in the gap for sucking gas from the output face 4 and/or the substrate 2 even in case the protrusions do not form a perfect seal against each other.
  • the heads 1A and IB are drawn at a distance, but it will be appreciated that in use the heads can be mounted against each other, such as with the protrusions 39A, 39B abutting.
  • the first head 1A is shown as having the first end structure 37A integral therewith. It is also possible that the end structures are separate parts, as shown in Figure 15.
  • Figure 17 shows an example of a bottom view of an ALD head unit including a first ALD head 1A and a second ALD head IB.
  • the first return slit 24A, 24B circumscribes the first feed slit 8A, 8B.
  • the second feed slit 30A, 30B circumscribes the first return slit 24A, 24B.
  • the second return slit 36C is formed by a gap between the heads 1A and IB.
  • the heads 1A, IB include protrusions 39 A, 39B. The protrusions allow for the gap between the heads 1A, IB to have a predetermined width. The width of the gap can e.g.
  • the second return slit 36A is formed by a gap between the end structure 37A and the first head 1A.
  • the second return slit 36B is formed by a gap between the end structure 37B and the second head IB.
  • the heads 1A and IB differ in that the second head IB additionally has second return slit portions 36D circumscribing the second feed slit connecting the gaps on both sides of the head IB.
  • the ALD head unit 100 can include more than two ALD heads. Then the second return slits between two adjacent heads can each be formed as a gap between said two adjacent heads.
  • the ALD head unit 100 can include a plasma deposition head as known in the art.
  • the ALD head unit 100 can be made suitable both for atomic layer deposition and plasma treatment of the substrate 2.
  • FIG 18 shows schematic representation of an example of an ALD head unit 100.
  • a first gas such as a first process gas is fed into the head unit 100 and out of the first first elongate feed slit 8A towards the substrate 2.
  • a second gas such as a purge gas is fed into the heads unit 100 and out of the second elongate feed slits 30A, 30B towards the substrate 2.
  • a third gas such as a second process gas is fed into the head unit 100 and out of the second first elongate feed slit 8B towards the substrate 2.
  • R gas is sucked away from the substrate through the return shts 42A, 42B and 42C.
  • the ALD head unit 100 allows supplying of a first and a, optionally different, second process gas to the substrate 2.
  • the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2.
  • the first first feed slit 8 A forms a first elongate process feed sht
  • the second first feed slit 8B forms a second elongate process feed slit.
  • a first second feed slit 30A and a second second feed slit 30B are placed between the first first feed slit 8A and the second first feed slit 8B .
  • the first second feed slit 30A forms a first elongate purge slit
  • the second second feed slit 30B forms a second elongate purge slit.
  • the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B.
  • two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B.
  • Figure 19 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1.
  • the ALD head 1 shown in Figure 19 is similar to the head 1 shown in Figure 1.
  • the output face 4 includes protrusions 5.
  • the protrusions can be elongate protrusions, such as ridges.
  • the ridges can e.g. be substantially parallel to the elongate feed slit 8.
  • the output face includes a plurality of protrusions 5, here six. It will be clear that any number of protrusions may be used.
  • the protrusions 5 provide the advantage that gas flowing out of the elongate feed slit and sideways between the output face 4 and the substrate 2 is affected by the presence of the protrusions.
  • the protrusions 5 cause more efficient interaction of the gas with the substrate. Without wishing to be bound by any theory, it is believed that the protrusions provide some turbulence in the flow of gas between the output face and the substrate, or at least render said flow less laminar. It will be appreciated that many cross sectional shapes can be conceived for the protrusions, such as rectangular, triangular, hemispherical, etc.. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the sht 8.
  • the protrusions 5 can e.g. be formed as bumps on the output face. The bumps, or the ridges, can be arranged in a regular or irregular pattern.
  • Figure 20 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1.
  • the ALD head 1 shown in Figure 20 is similar to the head 1 shown in Figure 3.
  • the output face includes protrusions 5 next to the return slit 24.
  • the output face includes protrusions 5. It will be appreciated that instead, or additionally, the output face can include depressions in the output face.
  • protrusions 5 and/or depressions can be applied to any of the ALD heads described herein. It will also be appreciated that the protrusions and/or depressions can advantageously be apphed in other ALD heads, such as ALD heads not having at least two at least two purge slits between two consecutive feed slits, and/or not having a monolithic output section.
  • protrusions and/or depressions can advantageously be applied in other ALD heads units, such as ALD heads units not having at least two purge slits between two consecutive feed slits, and/or not having a return slit for removing gas from the substrate formed by a gap between the first ALD head and the second ALD head.
  • Figure 21 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1.
  • the head 1 of Figure 21 is similar to the head of Figures 7.
  • the head 1 first elongate return slits 24 are positioned asymmetrically relative to the first elongate feed slit 8.
  • a distance between an adjacent upstream return slit 24 and the first elongate feed slit 8 is different from a distance between an adjacent downstream return slit 24 and the first feed slit 8.
  • This can be advantageous when the substrate 2 and head 1 move relative to each other in one direction only.
  • the substrate 2 is moved relative to the head 1 in a transport direction T, for example in a continuous process, e.g. roll-to-roll.
  • the return slit 24 on the downstream side is positioned further away from the first feed slit 8 than the return slit 24 on the upstream side.
  • processing time for the gas fed from the first elongate feed slit 8 is determined by the distance between the feed sht 8 and the downstream return slit 24 and the velocity of the substrate 2 relative to the head 1.
  • the upstream return slit 24 can be positioned closer to the feed slit 8 to allow a more compact head 1.
  • the first and second return slits 24, 36 are also positioned asymmetrically relative to the second feed slits 30.
  • the second feed slit 30 can be a purge slit as described hereinabove.
  • the purge slit positioned closer to the upstream adjacent return slit than to the downstream adjacent return slit can provide the advantage that flow of purge gas towards the upstream return slit has a higher flow speed, thus more effectively purging process gas away from the substrate.
  • the asymmetrically positioned return slits can also be applied in the examples of Figures 3-18 and 20, as well as in alternative ALD heads.
  • the feed slits 8, 30 are positioned asymmetrically relative to the chambers 22, 38, but it will be appreciated that this is not required.
  • the feed slits 8, 30 may also be positioned symmetrically relative to the chambers 22, 38 as shown in Figures 1-21.
  • Figure 22 shows a possible bottom view of the ALD head 1 of Figure 21.
  • the return slits 24 do not circumscribe but is parallel to the first elongate feed slit 8.
  • the second elongate feed sht 30 does not circumscribe but is parallel to the first elongate feed slit 8 and/or return slit 24.
  • the return slit 36 does not circumscribe but is parallel to the first elongate feed slit 8 and/or return slit 24 and/or the second elongate feed slit 30.
  • the ALD heads 1, 1A, IB, and the ALD head units 100 as described herein can be used in a method 200 for depositing a film of material onto a substrate 2.
  • Figure 23 shows an exemplary flow chart of such method.
  • a first step 202 the head 1, 1A, IB or head unit 100 is placed over the substrate 2.
  • a second step 204A a first process gas is flown out of one of the feed slits 8, 8A, 8B towards the surface of the substrate.
  • a purge gas is flown 204B out of the purge slits 30, 30A, 30B.
  • Excess gas can be sucked away 204C from the surface of the substrate 2 through return slits 24, 24A, 24B, 36, 36A, 36B, 42A, 42B, 42C.
  • a layer of material contained in or formable by the first process gas can then be deposited 206 onto the surface of the substrate (or on a previously deposited layer)
  • the ALD head 1, 1A, IB or ALD head unit 100 can be moved 208 along the surface of the substrate 2, or the substrate 2 can be moved along the head or head unit, or both the substrate and het head/head unit can be moved.
  • a next layer can be deposited. This is done in a similar way.
  • Depositing the second layer can involve using a different second process gas, e.g. supplied via a different feed slit, e.g. of a different head 1, 1A, IB or head unit 100.
  • the ALD head includes a first feed slit 8, 8A, 8B and a second feed slit 30, 30A, 30B. It will be appreciated that it is also possible that the ALD head includes more than two feed slits.
  • the second feed slit 30, 30A, 30B circumscribes the first feed slit 8, 8A, 8B. It is also possible that the second feeds slit does not circumscribe the first feed slit.
  • the second feed slit can be a rectangular slit, e.g. parallel with the first feed slit. It is possible that the ALD head includes a rectangular first feed slit and two (or more) rectangular second feed slits, e.g. one on either side of the first feed sht.
  • the at least one return slit 24, 24A, 24B, 36, 36A, 36B, 42A, 42B, 42C circumscribes the feed slit. It is also possible that the return slit does not circumscribe the feed slit.
  • the return slit can be a rectangular slit, e.g. parallel with the feed slit. It is possible that the ALD head includes a rectangular feed slit and two (or more) rectangular return slits, e.g. one on either side of the feed slit.
  • the ALD head unit includes two ALD heads. It will be appreciated that the ALD head unit may also include more than two ALD heads, such as three, four, five, six, eight, ten or twelve ALD heads.
  • the ALD head unit includes two ALD heads joined together in planar orientation. It will be appreciated that it is also possible that the ALD heads may be joined together such that their respective output faces form a curved surface, such as (part of) an inner or outer surface of a cylinder. Thereto the respective output face of each ALD head may be curved.
  • the curved surface may conform to a cylinder onto which a substrate is positioned, or loop of substrate, e.g. in a deposition process wherein the substrate is continuously (or in stop motion) fed past the ALD heads.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word ‘comprising’ does not exclude the presence of other features or steps than those listed in a claim.
  • the words ‘a’ and ‘an’ shall not be construed as limited to ‘only one’, but instead are used to mean ‘at least one’, and do not exclude a plurality.
  • the mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to an advantage.

Abstract

A method and head for atomic layer deposition, ALD. The head has an output face including a first elongate feed slit for outputting a first gas therethrough towards a substrate, an input face including a first feed opening for inputting the first gas into the head, and a first feed flow channel extending from the first feed opening to the first elongate feed slit. The head includes in the first feed flow channel a first elongate chamber along the first elongate feed slit. The head includes a monolithic output section including the output face and walls of the first elongate chamber.

Description

Title: Atomic layer deposition head and method
FIELD OF THE INVENTION
The present invention relates to an atomic layer deposition head. More in general, the invention relates to deposition of thin -film materials, such as apparatus for atomic layer deposition.
BACKGROUND TO THE INVENTION
Atomic layer deposition, ALD, is a known technique for depositing a thin film of a process material onto a substrate. Advances have been made in recent years in improving ALD. However, certain disadvantages remain.
A first problem often encountered when practicing ALD is that a gas fed from an atomic layer deposition head towards a substrate not only is deposited onto the substrate, but also contaminates the head itself. Therefore, cleaning of the head can be required at a regular basis.
SUMMARY OF THE INVENTION
It is an object to provide an atomic layer deposition, ALD, head that is less prone to contamination, and/or can be cleaned more easily. It is also an object to provide an atomic layer deposition head that is more convenient in use. More in general it is an object to provide an improved ALD head. It is also an object to provide a method for depositing a film of material onto a substrate that benefits from such advantages.
According to a first aspect is provided an atomic layer deposition, ALD, head. The ALD head has an output face including a first elongate feed sht for outputting a first gas therethrough towards a substrate. The first gas can be a first process gas. The first elongate feed slit allows for depositing a first material, e.g. contained in or formable by the first gas, to be deposited along the length of the first elongate feed slit. Preferably, the substrate and the head are moved relative to each other, such as in a direction perpendicular to the longitudinal direction of the first elongate feed sht. Thus, an area on the substrate having one dimension substantially corresponding to the length of the first feed slit can be covered with a layer of the material. The head includes an input face including a first feed opening for inputting the first gas into the head. A first feed flow channel extends from the first feed opening to the first elongate feed slit. Hence, the first gas can be fed from the first feed opening via the first feed flow channel to the first elongate feed slit. The first feed opening can have a compact cross section, such as a circular cross section, for easy connection to a feed line. For proper deposition of a thin layer having a uniform thickness, outflow of the first gas out of the first elongate feed slit is preferably uniform along the length of the slit. For creating such uniform outflow, the head includes in the first feed flow channel a first elongate chamber along the first elongate feed slit. Preferably the chamber extends along the entire length of the slit. Thus, the head can include a first elongate chamber extending in the longitudinal direction of the first elongate feed slit. The first elongate chamber can extend along the entire length of the first elongate feed slit. The first elongate chamber can open towards the first elongate feed slit along the entire length of the first elongate feed slit. Preferably the chamber has a width (perpendicular to the longitudinal direction of the slit) that is wider than a width of the slit. Thus, gas flowing from the first feed opening towards the first elongate feed slit will accumulate in the chamber and subsequently encounter a flow resistance, i.e. an elongate restriction, where the width of the chamber narrows to the width of the slit. The chamber includes a flow resistance material, such as a porous material, for creating a back pressure for the first gas fed into the chamber. Preferably the flow resistance material extends along the entire length of the chamber. Hence, the flow resistance material can extend along the entire length of the first elongate feed slit. Preferably the flow resistance material is in contact with side walls of the chamber to prevent gas from bypassing the flow resistance material. The backpressure generated by the flow resistance material aids in making the outflow from the slit uniform along its length. The ALD head includes a monolithic output section including the output face and walls of the first elongate chamber. Hence, the output face, the chamber, and the first elongate feed slit can be monolithic. The monohthic output section can e.g. be 3D-printedfrom stainless steel. It has been found that such monolithic output section can easily be cleaned, e.g. in an ultrasonic bath. Also, the monolithic output section provides the advantage that the geometry of the slit can be mechanically more stable than in designs where the slit is formed between separate mechanical parts of the output section.
It has been found that the flow resistance material providing the backpressure can assist in rendering dimensional accuracy of the slit, such as dimensional accuracy of the width of the slit, less important for proper layer deposition. The lesser requirements on dimensional accuracy can enhance the possibilities for monohthically forming the output section, e.g. by 3D printing.
Also, it has been found that using the flow resistance material the feed slit can be chosen having a larger width than when no flow resistance material is used. Such wider width can aid in allowing easy cleaning and/or manufacturing of the output section. The feed slit can e.g. have a width chosen in the interval of 50 pm up to 2000 pm, such as in the interval of 100 pm up to 500 pm, e.g. about 250 pm.
Optionally, the flow resistance material, such as the porous material, is a 3-dimensional, 3D, printed flow resistance material, such as a 3D printed porous material. This provides the advantage that the flow resistance material can easily be manufactured from a material well suited for cleaning, such as stainless steel, or another metal.
Optionally, the 3D printed flow resistance material is unitary with the output face. Thus the flow resistance material can be manufactured as a single unit with the output face. Hence, the output face, the chamber, the first elongate feed sht and the flow resistance material can be monolithic. The flow resistance material can include holes, channels or pores through an otherwise solid material. The flow resistance material can include plates or platelets with holes or channels in between. The flow resistance material can include globes, cubes or differently shaped objects with interstices therebetween.
The flow resistance material can provide a friction factor for gaseous material passing therethrough that is greater than 1 102, thereby providing back pressure. Preferably, the friction factor is between 1 104 and 1 108, such as between 1 105 and 5 106. The back pressure can e.g. promote equahzation of pressure where the respective gas exits the feed slit. The friction factor, /, can be represented by f=(Fk/(AxK)), where Fk is the force exerted due to the gas flow, A is the characteristic area of the flow resistance material, and K represents the kinetic energy of the gas flow, as for instance explained in W02008/085474A2.
Optionally, the ALD head includes a monolithic input section including the input face and ducts of the first feed flow channel extending from the first infeed opening towards the first elongate chamber. The input section can form a monolithic section, wherein the first feed flow channel can transform from a cross section according to the first feed opening to a cross section that connects to the first elongate feed slit. The input section and the output section can both be monolithic. This provides the advantage that a very simple structure is provided.
Optionally, the ALD head includes at least one elongate return sht for removing gas from the output face. The elongate return slit can be arranged for sucking gas away from the substrate. The ALD head can include an output opening for exhausting gas from the head, in communication with the at least one elongate return slit, and a return flow channel extending from the at least one elongate return slit to the output opening.
Optionally the monolithic output section includes the at least one elongate return slit. Hence the first elongate feed slit and the elongate return slit can be part of the same monolithic output section. Optionally, the monolithic input section includes the output opening and ducts of the return flow channel. Hence, the first feed opening and the output opening can form part of the same monolithic input section.
Optionahy, the at least one return slit is positioned substantially parallel to the first elongate feed slit. Hence, gas can be removed effectively.
Optionahy, the at least one return slit circumscribes the first elongate feed slit. This provides the advantage that all around the first elongate feed slit the gas fed to the substrate, but not deposited into a layer, can be removed. Hence interaction of the ALD head with adjacent ALD heads can be reduced which results in more effective operation and/or less contamination.
Optionahy, the ALD head includes at least one second elongate feed sht in the output face for outputting a second gas therethrough towards the substrate. The second gas can be purging gas, such as N2. The ALD head includes a second feed opening for inputting the second gas into the head; and a second feed flow channel extending from the second feed opening to the at least one second elongate feed slit. Hence the ALD head can be used for providing a first gas and a different, second gas to the substrate. The second gas can be a purging gas for reducing influence of the ALD head onto neighboring structures, such as neighbouring ALD heads. Optionally, the head includes in the second feed flow channel a second elongate chamber along the second elongate feed slit, wherein the second elongate chamber includes a 3D printed flow resistance material, such as a porous material, as described in view of the first elongate feed slit.
Optionahy, the monohthic output section includes the at least one second elongate feed slit. Hence the first elongate feed slit, the at least one second elongate feed slit, and optionally the elongate return slit, can be part of the same monohthic output section. Optionahy, the monohthic input section includes the second feed opening and ducts of the second feed how channel. Hence, the first feed opening, the second feed opening, and optionally the output opening can form part of the same monolithic input section.
Optionally, the at least one second feed slit is positioned substantially parallel to the first elongate feed slit.
Optionally, the at least one second elongate feed slit circumscribes the first elongate feed slit. This provides the advantage that all around the first elongate feed slit the second gas, such as a purging gas, can be fed to the substrate. Hence interaction of the ALD head with adjacent structures, such as adjacent ALD heads, can be reduced which results in more effective operation and/or less contamination.
Optionally, the at least one elongate return slit is positioned between the first elongate feed slit and the at least one second elongate feed sht. Thus, the return slit can return both the first gas fed by the first elongate feed slit and the second gas fed by the second elongate feed slit.
Optionally, the ALD head includes at least one second elongate return slit for removing gas from the output face. The at least one second elongate return sht can be included in the monolithic output section. The ALD head can include a second output opening for exhausting gas from the head, in communication with the at least one second elongate return slit, and a second return flow channel extending from the at least one second elongate return slit to the output opening. The monolithic input section can include the second output opening and ducts of the second return flow channel.
Optionally, the at least one second return slit is positioned substantially parallel to the first elongate feed slit. Optionally, the at least one second return slit circumscribes the second elongate feed slit. This provides the advantage that all around the second elongate feed slit the second gas, such as the purging gas, can be removed. Hence interaction of the ALD head with adjacent ALD heads can be reduced which results in more effective operation and/or less contamination. Optionally, the ALD head is monohthic. Thus, thee input face, ducts of the first feed flow channel extending from the first infeed opening towards the first elongate chamber, the first elongate chamber, the output face, and the first elongate feed slit form a monolithic structure. Optionally, also the flow resistance material is part of the monolithic structure. Optionally, also ducts of the second feed flow channel extending from the second infeed opening towards the second elongate chamber, the second elongate chamber, the output face, and the second elongate feed slit form part of the monolithic structure. Optionally, the elongate return slit, return flow channel and the output opening form part of the monolithic structure. Optionally, the second elongate return slit, second return flow channel and the second output opening form part of the monolithic structure. Hence a simple easy to clean and easy to replace ALD head is provided.
Optionally, the first feed opening and the second feed opening are positioned symmetrically relative to an axis through the center of the head. This provides the advantage that rotation of the head, e.g. over 180 degrees, around the axis switches the positions of the first and second feed openings, thus allowing simple changing of the gas fed to the first and second feed openings.
Optionally, the first feed opening is positioned such that rotation of the head, e.g. over 180 degrees, around the axis can be used for selectively connecting the first feed opening to a first supply line or to a second supply line, e.g. carrying mutually different gases. Then, the second feed opening may be positioned such that rotation of the head, e.g. over 180 degrees, around the axis connects the second feed opening to a third supply line, e.g. carrying purge gas, regardless of the rotational position.
According to a second aspect is provided an ALD head unit including two or more ALD heads as described hereinabove. The ALD heads can e.g. be mounted side by side. The ALD heads can be mounted such that the respective first elongate feed slits of the ALD heads are positioned substantially parallel.
It will be appreciated that a first gas can be provided to a first ALD head of the ALD head unit, such as a first process gas for depositing a first material, e.g. contained in or formable by the first gas, onto a substrate. A, e.g. different, third gas can be provided to a second ALD head of the ALD head unit, such as a, e.g. different, second process gas for depositing a, e.g. different, second material, e.g. contained in or formable by the third gas, onto a substrate. A, e.g. different, fourth gas can be provided to a third ALD head of the ALD head unit, and so forth.
Optionally, the output sections of the respective ALD heads of the ALD head unit form one unitary part. Hence, an easy to clean ALD head unit can be provided arranged for providing multiple (e.g. different, gases to a substrate, e.g. simultaneously. Optionally, the respective ALD heads of the ALD head unit form one unitary part.
According to a third aspect is provided an atomic layer deposition, ALD, head unit having an output face including a first elongate feed slit for outputting a first process gas therethrough towards a substrate and a second elongate feed sht for outputting a second process gas therethrough towards a substrate. The first and second process gasses can be identical or different. The ALD head unit includes at least a first and a second elongate purge slit in the output face between the first elongate feed slit and the second elongate feed sit for outputting a purge gas therethrough towards the substrate.
Thus, the ALD head unit is arranged for supplying two, e.g. different, process gases to the substrate. The two process gasses can be provided to the substrate alternately or simultaneously. At least two elongate purge slits are positioned between two consecutive elongate feed slits. Hence between the first elongate feed slit and the nearest second elongate feed slit two elongate purge slits are provided. The first elongate feed slit and the nearest second elongate feed slit can be positioned side-by-side, i.e. the first feed slit has a direction of elongation that is substantially, e.g. within 30 degrees, parallel to a direction of elongation of the nearest second elongate feed slit. By providing at least two elongate purge slits between two consecutive elongate feed slits gas separation from one feed slit to the other is greatly improved.
Optionally, the first elongate purge slit is positioned substantially parallel to the first elongate feed sht, and/or the second elongate purge slit is positioned substantially parallel to the second elongate feed slit. Optionally, the first elongate purge slit circumscribes the first elongate feed slit, and/or the second elongate purge slit circumscribes the second elongate feed slit. This provides the advantage that all around an elongate feed slit the purge gas, can be fed to the substrate. Hence interaction of the process gas from the first elongate feed slit with the second elongate feed slit, and vice versa, is greatly reduced.
Optionally, the output face includes at least one elongate return sht for removing gas from the output face. The elongate return slit can be arranged for sucking gas away from the substrate. The ALD head unit can include an output opening for exhausting gas from the head unit, in communication with the at least one elongate return slit, and a return flow channel extending from the at least one elongate return slit to the output opening.
Optionally, the output face includes a first elongate return slit positioned between the first elongate feed slit and the first elongate purge sht. The first elongate return slit can be positioned substantially parallel to the first elongate feed slit. The first elongate return slit can circumscribe the first elongate feed slit.
Optionally, the output face includes a second elongate return slit positioned between the first elongate purge slit and the second elongate purge sht. The second elongate return slit can be positioned substantially parallel to the first elongate purge slit. The second elongate return slit can circumscribe the first elongate purge slit.
Optionally, the output face includes a third elongate return slit positioned between the second elongate feed slit and the second elongate purge slit, wherein optionally the third elongate return slit is positioned substantially parallel to the second elongate feed slit, wherein optionally the third elongate return slit circumscribes the second elongate feed slit.
Optionally, the output face includes a fourth elongate return slit positioned between the second elongate purge slit and the first elongate purge sht, wherein optionally the fourth elongate return slit is positioned substantially parallel to the second elongate purge slit, wherein optionally the fourth elongate return slit circumscribes the second elongate purge slit.
Optionally, the ALD head unit includes a first ALD head comprising the first elongate feed sht and the first and a second elongate purge slit, and a second ALD head including the second elongate feed slit and the second elongate purge slit. Thus, the ALD head unit can have a modular structure, each ALD head forming a module having an elongate feed slit for process gas and a purge slit for purge gas. Optionally, the purge slit circumscribes the elongate feed slit. Hence, the modular ALD head unit can be provided wherein two purge slits are provided between each two adjacent elongate feed shts.
Optionally, in the ALD head a first return slit is provided between the elongate feed slit and the purge sht. Optionally the first return slit circumscribes the elongate feed slit. Optionally, in the ALD head a second return slit is provided. Optionally the second return slit circumscribes the elongate feed sht.
Optionally, in the ALD head unit a return slit, such as the second return slit, is formed by a gap between the first ALD head and the second ALD head. The space between two adjacent ALD heads can provide for leakage of ambient gas between the two heads towards the output face and/or the substrate in view of a reduced pressure between the output face and the substrate due to suction at return gas slits. By modifying a gap between two heads to a functional return slit, ambient gas is prevented from leaking towards the output face and/or the substrate.
Optionally, the output face includes one or more protrusions and/or depressions. The protrusions can be elongate protrusions, such as ridges. The ridges can e.g. be substantially parallel to the elongate feed slit. The depressions can be elongate depressions, such as grooves. The grooves can e.g. be substantially parallel to the elongate feed slit. The protrusions and/or depressions provide the advantage that gas flowing out of the elongate feed sht and between the output face and the substrate is affected by the presence of the protrusions and/or depressions. The protrusions and/or depressions cause more efficient interaction of the gas with the substrate. Without wishing to be bound by any theory, it is believed that the protrusions and/or depressions provide some turbulence in the flow of gas between the output face and the substrate, or at least render said flow less laminar. It will be appreciated that many cross sectional shapes can be conceived for the protrusions and/or depressions, such as rectangular, triangular, hemispherical, etc.. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the slit. The protrusions can e.g. be formed as bumps on the output face. The bumps, or the ridges, can be arranged in a regular or irregular pattern. It will also be appreciated that the depressions need not form grooves in a longitudinal direction of the slit. The depressions can e.g. be formed as dents on the output face. The dents, or the grooves, can be arranged in a regular or irregular pattern.
Optionally, a distance between a return slit adjacent to the first elongate feed slit and the first elongate feed slit on one side is different from a distance between a return slit adjacent to the first elongate feed slit on the other side and the first elongate feed slit. Optionally, a distance between an adjacent upstream return slit and the first elongate feed slit is different from a distance between an adjacent downstream return slit and the first elongate feed slit. Optionally, a distance between an adjacent upstream return slit and the first elongate feed slit is smaller than a distance between an adjacent downstream return slit and the first elongate feed slit. This can be advantageous when the substrate and ALD head unit move relative to each other in one direction only. In this example, the substrate 2 is moved relative to the head 1 in a transport direction T, for example in a continuous process, e.g. roll-to-roll.
Optionally, a distance between an adjacent upstream return slit and the second elongate feed slit is different from a distance between an adjacent downstream return slit and the second feed slit. Optionally, a distance between an adjacent upstream return slit and the second elongate feed slit is smaller than a distance between an adjacent downstream return slit and the second feed slit.
The ALD head unit can include a monolithic, e.g. 3D printed, output section including the output face with the first elongate feed slit and the first elongate purge slit. The monolithic output section can include the at least one elongate return slit.
Optionally, the ALD head unit includes an input section including a first feed opening for inputting the first process gas into the head unit and a second feed opening for inputting the purge gas into the head unit. The input section can include a first feed flow channel extending from the first feed opening towards the first elongate feed slit, and a second feed flow channel extending from the second feed opening towards the first elongate purge slit. The input section can be monohthic, such as 3D printed.
Optionally, the monohthic input section includes an output opening for exhausting gas from the head, in communication with the at least one elongate return slit and ducts of a return flow channel extending from the at least one elongate return slit to the output opening. Optionally, the ALD head unit includes a first elongate chamber along the first elongate feed slit, wherein the first elongate chamber includes a flow resistance material. The flow resistance material can be a, e.g. 3D printed, porous material.
Optionally, the ALD head unit includes a second elongate chamber along the second elongate feed slit, wherein the at least one second elongate chamber includes a flow resistance material. The flow resistance material can be a, e.g. 3D printed, porous material.
Optionally, the, e.g. 3D printed, porous material is unitary with the output face.
Optionally, in the ALD head unit a return slit, such as the second return slit, is formed by a gap between the first ALD head and the second ALD head.
According to a fourth aspect is provided an ALD head unit including a first ALD head comprising a first elongate feed slit for outputting a first process gas therethrough towards a substrate and a second ALD head including a second elongate feed slit for outputting a second process gas therethrough towards a substrate, wherein a return slit for removing gas from the substrate is formed by a gap between the first ALD head and the second ALD head. It will be appreciated that such return slit can advantageously also be put to practice with ALD heads not including purge shts or further return slits.
According to a fifth aspect is provided an ALD head having an output face comprising an elongate feed slit for outputting a process gas therethrough towards a substrate, wherein the output face includes one or more protrusions and/or depressions. The protrusions and/or depressions can be arranged adjacent the feed slit. The protrusions and/or depressions can be arranged between the feed slit and a return slit. The protrusions can be elongate protrusions, such as ridges. The ridges can e.g. be substantially parallel to the elongate feed slit. The depressions can be elongate depressions, such as grooves. The grooves can e.g. be substantially parallel to the elongate feed slit. It will be appreciated that many cross sectional shapes can be conceived for the protrusions and/or depressions, such as rectangular, triangular, hemispherical, etc. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the slit. The protrusions can e.g. be formed as bumps on the output face. The bumps, or the ridges, can be arranged in a regular or irregular pattern. It will also be appreciated that the depressions need not form grooves in a longitudinal direction of the slit. The depressions can e.g. be formed as dents on the output face. The dents, or the grooves, can be arranged in a regular or irregular pattern. The elongate feed slit can be positioned on a recessed portion of the output face which is recessed with respect to a remainder of the output face. The recessed portion can form recessed cavity surrounding the elongate feed slit. The protrusions or depressions can be formed on the recessed portion of the output face.
According to a sixth aspect is provided an ALD head or ALD head unit having an output face comprising an elongate feed slit for outputting a process gas therethrough towards a substrate and two return slits, one on either side of the elongate feed sht, wherein a distance between the one return sht and the elongate feed slit is different from a distance between the other return slit and the elongate feed slit. Optionally, a distance between an upstream return slit and the elongate feed slit is smaller than a distance between a downstream return slit and the elongate feed sht.
According to a seventh aspect is provided an ALD head unit including a plasma deposition head and at least one ALD head as described hereinabove. Hence, a first gas, such as a first process gas, can be provided to a substrate by a first ALD head, and the substrate can also be treated by a plasma, e.g. simultaneously.
Optionally, an output section of the plasma deposition head forms a unitary part with the output section of the at least one ALD head. Optionally, the plasma deposition head forms a unitary part with the at least one ALD head.
According to an eighth aspect is provided an atomic layer deposition apparatus including one or more ALD heads as described hereinabove or one or more ALD head units as described hereinabove. The apparatus can e.g. include two or more such ALD heads stacked side-by-side.
Optionally, the ALD heads may be joined together such that their respective output faces form a planar surface. Optionally, the ALD heads may be joined together such that their respective output faces form a curved surface, such as (part of) an inner or outer surface of a cylinder. Thereto the respective output face of each ALD head may be curved.
According to a ninth aspect is provided a method for depositing a film of material onto a substrate, including moving an ALD head or an ALD head unit as described herein and a substrate relative to each other, while flowing a gas including the material through the first elongate feed slit towards the substrate.
According to a tenth aspect is provided a method of manufacturing a) a photovoltaic element, b) a battery, c) a display, d) flexible electronics, or e) packaging materials including depositing a film of material, such as an electrically conducting material, a dielectric material or a barrier material, onto a substrate according to such method for depositing.
It will be appreciated that any of the aspects, features and options described in view of the ALD head apply equally to the ALD head unit, the apparatus and the method. It will also be clear that any one or more of the above aspects, features and options can be combined.
BRIEF DESCRIPTION OF THE DRAWINGS
Embodiments of the present invention will now be described in detail with reference to the accompanying drawings in which: Figure 1 shows a schematic representation of an example of an atomic layer deposition, ALD, head;
Figure 2 shows a schematic representation of an example of an ALD head;
Figure 3 shows a schematic representation of an example of an ALD head;
Figure 4 shows a schematic representation of an example of an ALD head;
Figure 5 shows a schematic representation of an example of an ALD head;
Figure 6 shows a schematic representation of an example of an ALD head;
Figure 7 shows a schematic representation of an example of an ALD head;
Figure 8 shows a schematic representation of an example of an ALD head;
Figure 9 shows two views of a schematic representation of an example of an ALD head;
Figure 10 shows a schematic representation of an example of an ALD head;
Figure 11 shows a schematic representation of an example of an ALD head;
Figure 12 shows a schematic representation of an example of an ALD head;
Figure 13 shows a schematic representation of an example of an ALD head unit;
Figure 14 shows a schematic representation of an example of an ALD head unit;
Figure 15 shows a schematic representation of an example of an ALD head unit; Figure 16 shows a schematic representation of an example of an ALD head unit;
Figure 17 shows a schematic representation of an example of an ALD head unit;
Figure 18 shows a schematic representation of an example of an ALD head unit;
Figure 19 shows a schematic representation of an example of an ALD head;
Figure 20 shows a schematic representation of an example of an ALD head;
Figure 21 shows a schematic representation of an example of an ALD head;
Figure 22 shows a schematic representation of an example of an ALD head; and
Figure 23 shows an example of a method.
DETAILED DESCRIPTION
Figures 1 and 2 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1. Figure 2 shows a longitudinal cross section of the head 1, Figure 1 a cross section perpendicular to the longitudinal direction of the head 1. The ALD head 1 is arranged for depositing an atomic layer of a material onto a substrate 2. The ALD head 1 includes an output face 4 and an input face 6. The output face 4 includes a first elongate feed slit 8. The input face 6 includes a first feed opening 10. The first feed opening 10 can have a compact cross section, such as a circular cross section, for easy connection to a feed line (not shown). A first feed flow channel 12 extends from the first feed opening 10 to the first elongate feed sht 8. In the first feed flow channel 12 a first elongate chamber 14 is positioned along the first elongate feed slit 8. In this example the chamber 14 extends along the entire length of the first elongate feed slit 8. Here, the chamber 14 has a width, measured perpendicular to the longitudinal direction of the first feed slit 8, that is wider than a width of the first feed slit 8. In this example, the head 1 includes an output section 16. The output section 16 includes the output face 4 and walls 18 of the first elongate chamber 14. Here, the output 16 section is monohthic. In this example, the head 1 includes an input section 20. The input section 20 includes the input face 6 and at least a part of the first feed flow channel 12. Here the input section 20 is monohthic. It is possible that the input section 20 forms a unitary part with the output section 16. Hence, the ALD head 1 can be monohthic.
In use a first gas, such as a first process gas is inputted into the first fed opening 10. The first gas travels through the first feed flow channel 12 and through the first elongate chamber 14 to the first elongate feed slit 8. The first elongate feed slit 8 is arranged for, in use, outputting the first gas therethrough towards the substrate 2. The first elongate feed slit 8 allows for depositing a first material, e.g. contained in or formable by the first gas, to be deposited onto the substrate 2 along the length of the first elongate feed slit 8.
For proper deposition of a thin layer having a uniform thickness, outflow of the first gas out of the first elongate feed slit 8 is preferably uniform along the length of the slit. For creating such uniform outflow, the head 1 includes in the first elongate chamber 14 along the first elongate feed slit a flow resistance material 22 for creating a back pressure for the first gas fed into the chamber 14. In this example, the flow resistance material 22 is a porous material. Here, the flow resistance material 22 extends along the entire length of the chamber 14. Here, the flow resistance material 22 is in contact with the side walls 18 of the chamber 14 to prevent gas from bypassing the flow resistance material 22. The backpressure generated by the flow resistance material aids in making the outflow from the first feed slit 8 uniform along its length. The ALD head includes the monohthic output section 16 including the output face 4 and walls 18 of the first elongate chamber 14. Hence, the output face 4, the chamber 14, and the first elongate feed slit 8 can be monolithic. The monolithic output section 16 can e.g. be 3D-printed from a metal, such as stainless steel. It has been found that such monolithic output section can easily be cleaned, e.g. in an ultrasonic bath.
In the example of Figures 1 and 2 the flow resistance material 22 is a 3-dimensional, 3D, printed flow resistance material, such as a 3D printed porous material. This provides the advantage that the flow resistance material 22 can easily be manufactured from a material well suited for cleaning, such as stainless steel, or another metal. In this example the 3D printed flow resistance material 22 is unitary with the output section 16. Thus the flow resistance material 22 can be manufactured as a single unit with the output section 16. When the input section 20 and output section 16 are unitary, the head 1 can be manufactured as a single unit including the flow resistance material 22.
The substrate 2 and/or the head 1 can be mounted so as to be movable, such that the substrate 2 and the head 1 can be moved relative to each other, such as in a direction A perpendicular to the longitudinal direction of the first elongate feed slit 8. Thus, an area on the substrate 2, e.g. having one dimension substantially corresponding to the length of the first feed slit 8, can be covered with a layer of the first material.
Figure 3 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1. The head 1 of Figure 3 is similar to the head of Figures 1 and 2. In the example of Figure 3, the head 1 includes an elongate return slit 24. The elongate return slit 24 is arranged for, in use, removing gas from the output face 4 and/or the substrate 2. The return slit can be connected to a suction device. The suction device can provide a reduced pressure at the return slit for sucking away gas from the output face 4 and/or the substrate 2. The head 1 here includes an output opening 26 for exhausting gas from the head 1, in communication with the elongate return slit 24. In Figure 3 return flow channels 28 extending from the elongate return slit 24 to the output opening 26 are shown. The monolithic output section 16 in this example includes the elongate return sht 24. The monolithic input section 20 in this example includes the output opening 26 and ducts of the return flow channel 28.
Figure 4 shows a bottom view of the ALD head 1 of Figure 3. As can be seen in Figure 4, in this example the return slit 24 is positioned such that large portions of the return slit 24 are parallel to the first elongate feed slit 8. Hence, gas can be removed effectively. In this example, the return slit 24 circumscribes the first elongate feed slit 8. This provides the advantage that all around the first elongate feed sht 8 the gas fed to the substrate 2, but not deposited into a layer, can be removed.
Figure 5 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1. The head 1 of Figure 5 is similar to the head of Figures 3 and 4. In the example of Figure 5, the head 1 includes a second elongate feed slit 30 in the output face 4 for outputting a second gas therethrough towards the substrate 2. The second gas can be a purging gas, such as N2. The ALD head 1 includes a second feed opening 32 for inputting the second gas into the head 1. A second feed flow channel 34 extends from the second feed opening 32 to the second elongate feed slit 30. Hence the head 1 can be used for providing a first gas and a different, second gas to the substrate2, e.g. simultaneously. The second gas can be a purging gas for reducing influence of the head 1 onto neighboring structures, such as neighboring ALD heads. In this example, the head 1 includes in the second feed flow channel 34 a second elongate chamber 35 along the second elongate feed slit 30. The second elongate chamber 35 here includes a flow resistance material 38, e.g. a 3D printed flow resistance material such as a porous material. In this example, the monolithic output section 16 includes the second elongate feed slit 30. Hence here the first elongate feed slit 8, the second elongate feed slit 30, and the elongate return slit 24 form part of the same monolithic output section 16. In this example, the monolithic input section 20 includes the second feed opening 32 and ducts of the second feed flow channel 34. Hence, here the first feed opening 10, the second feed opening 32, and the output opening 26 form part of the same monolithic input section 20.
Figure 6 shows a bottom view of the ALD head 1 of Figure 5. As can be seen in Figure 6, in this example the return slit 24 is positioned such that large portions of the return slit 24 are parallel to the first elongate feed slit 8. Here, the return slit 24 circumscribes the first elongate feed slit 8. In this example the second feed slit 30 is positioned such that large portions of the second elongate feed slit 30 are parallel to the first elongate feed slit 8 and the return slit 24. Here, the second elongate feed sit 30 circumscribes the first elongate feed slit 8 and the return slit 24. This provides the advantage that all around the first elongate feed slit 8 the second gas, such as a purging gas, can be fed to the substrate 2. Hence interaction of the ALD head 1 with adjacent structures, such as adjacent ALD heads, can be reduced which results in more effective operation and/or less contamination.
Figure 7 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1. The head 1 of Figure 7 is similar to the head of Figures 5 and 6. In the example of Figure 7, the head 1 includes a second elongate return slit 36. The second elongate return slit 36 is arranged for, in use, removing gas from the output face 4 and/or the substrate 2. The head 1 here includes a second output opening 38 for exhausting gas from the head 1, in communication with the second elongate return slit 36. It will be appreciated that the second output opening 38 may be the same as the output opening 26. In Figure 7 second return flow channels 40 extending from the second elongate return slit 36 to the second output opening 38 are shown. The monolithic output section 16 in this example includes the second elongate return slit 36. The monolithic input section 20 in this example includes the second output opening 38 and ducts of the second return flow channel 40.
Figure 8 shows a bottom view of the ALD head 1 of Figure 7. As can be seen in Figure 8, in this example the second return slit 36 is positioned such that large portions of the second return slit 36 are parallel to the second elongate feed sht 30. Hence, gas can be removed effectively. In this example, the second return slit 36 circumscribes the first elongate feed slit 8, the return sht 24 and the second elongate feed slit 30. This provides the advantage that all around the second elongate feed sht 30 the gas fed to the substrate 2 can be removed.
Figure 9 shows two isometric views of an example of an ALD head 1 generally according to Figures 7 and 8. In Figure 9 three cross sections are indicated. Cross section AA is shown in Figure 10. Cross section BB is shown in Figure 11. Cross section CC is shown in Figure 12. In this example, the entire shown ALD head 1 is monolithic. In this example the entire ALD head is monolithically 3D printed, e.g. from a metal, such as stainless steel.
It is noted that in the example of Figure 9 the head 1 includes two second feed openings 32. These two second feed openings 32 are in mutual connection, allowing gas feed, such as purge gas feed, to be selectively inputted into one of the two openings 32 or both openings simultaneously.
In the example of Figure 10 the first feed opening 10 is circular. The first feed flow channel 12 starts with a circular cross section and mouths into the first elongate chamber 14 with a generally rectangular cross section. It can also be seen that the return flow channel 28 and the second return flow channel 40 connect to a plenum 44. In the cross section AA shown in Figure 10 the first feed flow channel 12 passes through the plenum 44. Walls 46 separate the first feed flow channel 12 from the plenum 44.
In the example of Figure 11 the second feed opening 32 is circular. The second feed flow channel 34 starts with a circular cross section and bifurcates and mouths into the second elongate chamber 35. In the cross section BB shown in Figure 11 the second feed flow channel 34 passes through the plenum 44. Walls 48 separate the second feed flow channel 34 from the plenum 44. In the example of Figure 12 the output opening 26 is circular. The return flow channel 26 starts with a circular cross section and mouths into the plenum 44.
Figures 13 and 14 show schematic representations of an example of an ALD head unit 100. In this example, the ALD head unit includes a first ALD head 1A and a second ALD head IB. In the Figures the heads 1A and
IB are drawn at a small distance for clarity. It will be appreciated that in practice the heads 1A and IB can abut against each other. In Figure 13 the first ALD head 1A is according Figures 7 and 8. In Figure 13 the second ALD head IB is according Figures 7 and 8. However, it will be appreciated that the first ALD head 1A can be an ALD head as described in view of any of Figures 1-12 and the second ALD head IB can be an ALD head as described in view of any of Figures 1-12. For clarity only the output sections are shown.
In this example, at I a first gas, such as a first process gas is fed into the head 1A and out of the first first elongate feed slit 8A towards the substrate 2. At II a second gas, such as a purge gas is fed into the heads 1A and IB and out of the second elongate feed slits 30A, 30B towards the substrate 2. At III a third gas, such as a second process gas is fed into the head IB and out of the second first elongate feed slit 8B towards the substrate 2. At R gas is sucked away from the substrate through the first and second return slits 24A, 24B, 36A, 36B. Hence, the ALD head unit 100 allows supplying of a first and a, optionally different, second process gas to the substrate 2.
It will be appreciated that the ALD head unit 100 can include more than two ALD heads as described in view of any of Figures 1-12. Thus, more than two process gasses can be provided to the substrate 2 using the ALD head unit 100.
As can be seen in Figure 13, the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2. Here the first first feed slit 8 A forms a first elongate process feed sht, and the second first feed slit 8B forms a second elongate process feed slit. Between the first first feed slit 8A and the second first feed slit 8B a first second feed slit 30A and a second second feed slit 30B are placed. Here the first second feed slit 30A forms a first elongate purge slit, and the second second feed slit 30B forms a second elongate purge slit. Thus, the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B. In Figure 13 two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B. By providing at least two elongate purge slits 30 A, 30B between two consecutive elongate feed slits 8 A, 8B gas separation from one feed slit 8A to the other 8B is greatly improved.
In the example of Figure 13 the first first return slit 24A forms a first return slit, the first second return slit 36A forms a second return slit, the second first return slit 24B forms a third return slit, and the second second return slit 36B forms a fourth return slit.
It will be appreciated that in addition to the ALD heads 1A, IB, or instead of one thereof, the ALD head unit 100 can include a plasma deposition head as known in the art. Thus, the ALD head unit 100 can be made suitable both for atomic layer deposition and plasma treatment of the substrate 2.
Figures 15, 16 and 17 show schematic representations of an example of an ALD head unit 100. In this example, the ALD head unit includes a first ALD head 1A and a second ALD head IB. Figure 15 shows a cross sectional view. For clarity only the output sections are shown. In this example, at I a first gas, such as a first process gas is fed into the head 1A and out of the first first elongate feed sht 8A towards the substrate 2. At II a second gas, such as a purge gas is fed into the heads 1A and IB and out of the second elongate feed slits 30A, 30B towards the substrate 2. At III a third gas, such as a second process gas is fed into the head IB and out of the second first elongate feed slit 8B towards the substrate 2. Hence, the ALD head unit 100 allows supplying of a first and a, optionally different, second process gas to the substrate 2. At R gas is sucked away from the substrate through the first and second return slits 24A, 24B, 36A, 36B, 36C. In this example, the second return slits 36C is formed by a single (joint) second return slit between the heads 1A and IB. In this example, the second return slit 36C is formed by a gap between the heads 1A and IB. In this example the heads 1A and IB are, at least substantially, symmetrical to the effect that the second return slit 36A is formed as a gap between the first head 1A and a first end structure 37A. The second return slit 36B is formed as a gap between the second head IB and a second end structure 37B. It will be appreciated that the ALD head unit 100 can include more than two ALD heads. Then the second return slits between two adjacent heads can each be formed as a gap between said two adjacent heads.
As can be seen in Figure 15, the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2. Here the first first feed slit 8 A forms a first elongate process feed sht, and the second first feed slit 8B forms a second elongate process feed slit. Between the first first feed slit 8A and the second first feed slit 8B a first second feed slit 30A and a second second feed slit 30B are placed. Here the first second feed slit 30A forms a first elongate purge slit, and the second second feed slit 30B forms a second elongate purge slit. Thus, the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B. In Figure 13 two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B. By providing at least two elongate purge slits 30 A, 30B between two consecutive elongate feed slits 8 A, 8B gas separation from one feed slit 8A to the other 8B is greatly improved.
Figure 16 shows an example of a bottom view of an ALD head unit including a first ALD head 1A and a second ALD head IB. In this example, the feed slits and return slits are straight slits. In this example too the second return slit 36C is formed by a gap between the heads 1A and IB. In this example, the heads 1A, IB include protrusions 39 A, 39B. The protrusions allow for the gap between the heads 1A, IB to have a predetermined width. Also, the protrusions allow for a reduced pressure to be maintained in the gap for sucking gas from the output face 4 and/or the substrate 2 even in case the protrusions do not form a perfect seal against each other. In Figure 16 the heads 1A and IB are drawn at a distance, but it will be appreciated that in use the heads can be mounted against each other, such as with the protrusions 39A, 39B abutting. In the example of Figure 16 the first head 1A is shown as having the first end structure 37A integral therewith. It is also possible that the end structures are separate parts, as shown in Figure 15.
Figure 17 shows an example of a bottom view of an ALD head unit including a first ALD head 1A and a second ALD head IB. In this example, the first return slit 24A, 24B circumscribes the first feed slit 8A, 8B. Here, the second feed slit 30A, 30B circumscribes the first return slit 24A, 24B. In this example the second return slit 36C is formed by a gap between the heads 1A and IB. In this example, the heads 1A, IB include protrusions 39 A, 39B. The protrusions allow for the gap between the heads 1A, IB to have a predetermined width. The width of the gap can e.g. be 0.2-0.8 mm, such as 0.3-0.6 mm, e.g. about 0.5 mm. In this example, the second return slit 36A is formed by a gap between the end structure 37A and the first head 1A. In this example, the second return slit 36B is formed by a gap between the end structure 37B and the second head IB. In this example, the heads 1A and IB differ in that the second head IB additionally has second return slit portions 36D circumscribing the second feed slit connecting the gaps on both sides of the head IB. It will be appreciated that the ALD head unit 100 can include more than two ALD heads. Then the second return slits between two adjacent heads can each be formed as a gap between said two adjacent heads.
In view of Figures 15-17 it is noted that it will be appreciated that in addition to the ALD heads 1A, IB, or instead of one thereof, the ALD head unit 100 can include a plasma deposition head as known in the art. Thus, the ALD head unit 100 can be made suitable both for atomic layer deposition and plasma treatment of the substrate 2.
Figure 18 shows schematic representation of an example of an ALD head unit 100. In this example, at I a first gas, such as a first process gas is fed into the head unit 100 and out of the first first elongate feed slit 8A towards the substrate 2. At II a second gas, such as a purge gas is fed into the heads unit 100 and out of the second elongate feed slits 30A, 30B towards the substrate 2. At III a third gas, such as a second process gas is fed into the head unit 100 and out of the second first elongate feed slit 8B towards the substrate 2. At R gas is sucked away from the substrate through the return shts 42A, 42B and 42C. Hence, the ALD head unit 100 allows supplying of a first and a, optionally different, second process gas to the substrate 2.
As can be seen in Figure 18, the ALD head unit 100 includes an output face 4 including a first first elongate feed slit 8A for outputting a first process gas therethrough towards a substrate 2 and a second first elongate feed 8B slit for outputting a second process gas therethrough towards a substrate 2. Here the first first feed slit 8 A forms a first elongate process feed sht, and the second first feed slit 8B forms a second elongate process feed slit. Between the first first feed slit 8A and the second first feed slit 8B a first second feed slit 30A and a second second feed slit 30B are placed. Here the first second feed slit 30A forms a first elongate purge slit, and the second second feed slit 30B forms a second elongate purge slit. Thus, the ALD head unit 100 is arranged for supplying two, e.g. different, process gases to the substrate simultaneously, here via feed slits 8A and 8B. In Figure 18 two elongate purge slits 30A, 30B are positioned between two consecutive elongate feed slits 8A, 8B. By providing at least two elongate purge slits 30 A, 30B between two consecutive elongate feed slits 8 A, 8B gas separation from one feed slit 8A to the other 8B is greatly improved.
Figure 19 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1. The ALD head 1 shown in Figure 19 is similar to the head 1 shown in Figure 1. In this example, the output face 4 includes protrusions 5. The protrusions can be elongate protrusions, such as ridges. The ridges can e.g. be substantially parallel to the elongate feed slit 8. In this example, the output face includes a plurality of protrusions 5, here six. It will be clear that any number of protrusions may be used. The protrusions 5 provide the advantage that gas flowing out of the elongate feed slit and sideways between the output face 4 and the substrate 2 is affected by the presence of the protrusions. The protrusions 5 cause more efficient interaction of the gas with the substrate. Without wishing to be bound by any theory, it is believed that the protrusions provide some turbulence in the flow of gas between the output face and the substrate, or at least render said flow less laminar. It will be appreciated that many cross sectional shapes can be conceived for the protrusions, such as rectangular, triangular, hemispherical, etc.. It will also be appreciated that the protrusions need not form ridges in a longitudinal direction of the sht 8. The protrusions 5 can e.g. be formed as bumps on the output face. The bumps, or the ridges, can be arranged in a regular or irregular pattern.
Figure 20 shows a schematic representation of an example of an atomic layer deposition, ALD, head 1. The ALD head 1 shown in Figure 20 is similar to the head 1 shown in Figure 3. In this example, the output face includes protrusions 5 next to the return slit 24. In the examples of Figs. 19 and 20, the output face includes protrusions 5. It will be appreciated that instead, or additionally, the output face can include depressions in the output face.
It will be appreciated that the protrusions 5 and/or depressions can be applied to any of the ALD heads described herein. It will also be appreciated that the protrusions and/or depressions can advantageously be apphed in other ALD heads, such as ALD heads not having at least two at least two purge slits between two consecutive feed slits, and/or not having a monolithic output section.
It will also be appreciated that the protrusions and/or depressions can advantageously be applied in other ALD heads units, such as ALD heads units not having at least two purge slits between two consecutive feed slits, and/or not having a return slit for removing gas from the substrate formed by a gap between the first ALD head and the second ALD head.
Figure 21 shows a schematic cross section of an example of an atomic layer deposition, ALD, head 1. The head 1 of Figure 21 is similar to the head of Figures 7. In the example of Figure 21, the head 1 first elongate return slits 24 are positioned asymmetrically relative to the first elongate feed slit 8. Hence, a distance between an adjacent upstream return slit 24 and the first elongate feed slit 8 is different from a distance between an adjacent downstream return slit 24 and the first feed slit 8. This can be advantageous when the substrate 2 and head 1 move relative to each other in one direction only. In this example, the substrate 2 is moved relative to the head 1 in a transport direction T, for example in a continuous process, e.g. roll-to-roll. The return slit 24 on the downstream side is positioned further away from the first feed slit 8 than the return slit 24 on the upstream side. Thus, processing time for the gas fed from the first elongate feed slit 8 is determined by the distance between the feed sht 8 and the downstream return slit 24 and the velocity of the substrate 2 relative to the head 1. The upstream return slit 24 can be positioned closer to the feed slit 8 to allow a more compact head 1. In this example, the first and second return slits 24, 36 are also positioned asymmetrically relative to the second feed slits 30. The second feed slit 30 can be a purge slit as described hereinabove. Having the purge slit positioned closer to the upstream adjacent return slit than to the downstream adjacent return slit can provide the advantage that flow of purge gas towards the upstream return slit has a higher flow speed, thus more effectively purging process gas away from the substrate. It will be appreciated that the asymmetrically positioned return slits can also be applied in the examples of Figures 3-18 and 20, as well as in alternative ALD heads. In this example, the feed slits 8, 30 are positioned asymmetrically relative to the chambers 22, 38, but it will be appreciated that this is not required. The feed slits 8, 30 may also be positioned symmetrically relative to the chambers 22, 38 as shown in Figures 1-21.
Figure 22 shows a possible bottom view of the ALD head 1 of Figure 21. As can be seen in Figure 22. It will be appreciated that it is also possible that the return slits 24 do not circumscribe but is parallel to the first elongate feed slit 8. It will be appreciated that it is also possible that the second elongate feed sht 30 does not circumscribe but is parallel to the first elongate feed slit 8 and/or return slit 24. It will be appreciated that it is also possible that the return slit 36 does not circumscribe but is parallel to the first elongate feed slit 8 and/or return slit 24 and/or the second elongate feed slit 30.
The ALD heads 1, 1A, IB, and the ALD head units 100 as described herein can be used in a method 200 for depositing a film of material onto a substrate 2. Figure 23 shows an exemplary flow chart of such method. In a first step 202 the head 1, 1A, IB or head unit 100 is placed over the substrate 2. In a second step 204A a first process gas is flown out of one of the feed slits 8, 8A, 8B towards the surface of the substrate. Simultaneously with flowing the process gas towards the substrate a purge gas is flown 204B out of the purge slits 30, 30A, 30B. Excess gas can be sucked away 204C from the surface of the substrate 2 through return slits 24, 24A, 24B, 36, 36A, 36B, 42A, 42B, 42C. A layer of material contained in or formable by the first process gas can then be deposited 206 onto the surface of the substrate (or on a previously deposited layer) The ALD head 1, 1A, IB or ALD head unit 100 can be moved 208 along the surface of the substrate 2, or the substrate 2 can be moved along the head or head unit, or both the substrate and het head/head unit can be moved. When a first layer has been deposited, a next layer can be deposited. This is done in a similar way. Depositing the second layer can involve using a different second process gas, e.g. supplied via a different feed slit, e.g. of a different head 1, 1A, IB or head unit 100.
Herein, the invention is described with reference to specific examples of embodiments of the invention. It will, however, be evident that various modifications and changes may be made therein, without departing from the essence of the invention. For the purpose of clarity and a concise description features are described herein as part of the same or separate embodiments, however, alternative embodiments having combinations of all or some of the features described in these separate embodiments are also envisaged.
In the examples of Figure 5-18, 21 and 22 the ALD head includes a first feed slit 8, 8A, 8B and a second feed slit 30, 30A, 30B. It will be appreciated that it is also possible that the ALD head includes more than two feed slits.
In the examples of Figures 5-14, 17 and 22 the second feed slit 30, 30A, 30B circumscribes the first feed slit 8, 8A, 8B. It is also possible that the second feeds slit does not circumscribe the first feed slit. For example, the second feed slit can be a rectangular slit, e.g. parallel with the first feed slit. It is possible that the ALD head includes a rectangular first feed slit and two (or more) rectangular second feed slits, e.g. one on either side of the first feed sht. In the examples of Figures 3-14, 17 and 22 the at least one return slit 24, 24A, 24B, 36, 36A, 36B, 42A, 42B, 42C, circumscribes the feed slit. It is also possible that the return slit does not circumscribe the feed slit. For example, the return slit can be a rectangular slit, e.g. parallel with the feed slit. It is possible that the ALD head includes a rectangular feed slit and two (or more) rectangular return slits, e.g. one on either side of the feed slit.
In the examples of Figures 14-17 the ALD head unit includes two ALD heads. It will be appreciated that the ALD head unit may also include more than two ALD heads, such as three, four, five, six, eight, ten or twelve ALD heads.
In the examples of Figures 14-17 the ALD head unit includes two ALD heads joined together in planar orientation. It will be appreciated that it is also possible that the ALD heads may be joined together such that their respective output faces form a curved surface, such as (part of) an inner or outer surface of a cylinder. Thereto the respective output face of each ALD head may be curved. The curved surface may conform to a cylinder onto which a substrate is positioned, or loop of substrate, e.g. in a deposition process wherein the substrate is continuously (or in stop motion) fed past the ALD heads.
However, other modifications, variations, and alternatives are also possible. The specifications, drawings and examples are, accordingly, to be regarded in an illustrative sense rather than in a restrictive sense.
For the purpose of clarity and a concise description features are described herein as part of the same or separate embodiments, however, it will be appreciated that the scope of the invention may include embodiments having combinations of all or some of the features described.
In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word ‘comprising’ does not exclude the presence of other features or steps than those listed in a claim. Furthermore, the words ‘a’ and ‘an’ shall not be construed as limited to ‘only one’, but instead are used to mean ‘at least one’, and do not exclude a plurality. The mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to an advantage.

Claims

Claims
1. An atomic layer deposition, ALD, head having: an output face including a first elongate feed slit for outputting a first gas therethrough towards a substrate; an input face including a first feed opening for inputting the first gas into the head; and a first feed flow channel extending from the first feed opening to the first elongate feed slit; wherein the head includes in the first feed flow channel a first elongate chamber along the first elongate feed slit, including a monohthic output section including the output face and walls of the first elongate chamber.
2. The ALD head of claim 1, wherein the first elongate chamber includes a 3D printed flow resistance material, such as a porous material.
3. The ALD head according to claim 2, wherein the 3D printed flow resistance material is unitary with the output section.
4. The ALD head according to any of claims 1-3, including a monolithic input section including the input face and ducts of the first feed flow channel extending from the first infeed opening towards the first elongate chamber.
5. The ALD head according to any of claims 1-4, including - at least one elongate return slit for removing gas from the output face; an output opening for exhausting gas from the head, in communication with the at least one elongate return slit, and a return flow channel extending from the at least one elongate return slit to the output opening.
6. The ALD head according to claim 5, wherein the monolithic output section includes the at least one elongate return slit.
7. The ALD head according to claim 4 and one of 5 or 6, wherein the monolithic input section includes the output opening and ducts of the return flow channel.
8. The ALD head according to any of claims 5-7, wherein the at least one return slit is positioned substantially parallel to the first elongate feed sht.
9. The ALD head according to any of claims 5-8, wherein the at least one return slit circumscribes the first elongate feed slit.
10. The ALD head according to any of claims 1-9, including at least one second elongate feed slit in the output face for outputting a second gas therethrough towards the substrate; a second feed opening for inputting the second gas into the head; and a second feed flow channel extending from the second feed opening to the at least one second elongate feed slit; wherein the head includes in the second feed flow channel a second elongate chamber along the second elongate feed slit, wherein the second elongate chamber includes a, optionally 3D printed, flow resistance material, such as a porous material.
11. The ALD head according to at least claim 10, wherein the monolithic output section includes the at least one second elongate feed slit.
12. The ALD head according to at least claim 4 and one of 10 or 11, wherein the monolithic input section includes the second feed opening and ducts of the second feed flow channel.
13. The ALD head according to any of claims 10-12, wherein the at least one second feed slit is positioned substantially parallel to the first elongate feed sht.
14. The ALD head according to any of claims 10-13, wherein the at least one second elongate feed slit circumscribes the first elongate feed slit.
15. The ALD head according to any of claims 5-9 and any of claims 10-14, wherein the at least one elongate return slit is positioned between the first elongate feed slit and the at least one second elongate feed slit.
16. The ALD head according to any of claims 5-15, including at least one second elongate return slit for removing gas from the output face; a second output opening for exhausting gas from the head, in communication with the at least one second elongate return slit, and a second return flow channel extending from the at least one second elongate return slit to the output opening.
17. The ALD head according to claim 16, wherein the monolithic output section includes the at least one second elongate return slit.
18. The ALD head according to at least claim 4 and one of 16 or 17, wherein the monolithic input section includes the second output opening and ducts of the second return flow channel.
19. The ALD head according to any of claims 16-18, wherein the at least one second return slit is positioned substantially parallel to the first elongate feed sht.
20. The ALD head according to any of claims 16-19 and one of 10-15, wherein the at least one second return slit circumscribes the second elongate feed sht.
21. The ALD head of any of claims 1-20, wherein the head is monolithic.
22. The ALD head of any of claims 1-21, wherein the output face includes one or more protrusions.
23. The ALD head of claim 5, or any of claims 6-22 when dependent from claim 5, comprising two return slits, one on either side of the first elongate feed sht, wherein a distance between the one return slit and the first elongate feed slit is different from a distance between the other return sht and the first elongate feed slit.
24. An ALD head unit including two or more ALD heads according to any of claims 1-23.
25. The ALD head unit according to claim 24, wherein the output sections of the respective ALD heads form one unitary part.
26. The ALD head unit according to claim 24 or 25, wherein the respective ALD heads form one unitary part.
27. An ALD head unit including a plasma deposition head and at least one ALD head according to any of claims 1-23.
28. The ALD head unit according to claim 27, wherein an output section of the plasma deposition head forms a unitary part with the output section of the at least one ALD head.
29. The ALD head unit according to claim 27 or 28, wherein the plasma deposition head forms a unitary part with the at least one ALD head.
30. The ALD head unit according to claim 24, including a first ALD head comprising the first elongate feed slit and a second ALD head including the second elongate feed slit, wherein a return slit for removing gas from the output face is formed by a gap between the first ALD head and the second ALD head.
31. The ALD head unit according to any of claims 24-30, wherein the output face includes one or more protrusions.
32. The ALD head unit according to any of claims 24-31, comprising two return slits, one on either side of the first elongate feed sht, wherein a distance between the one return slit and the first elongate feed sht is different from a distance between the other return slit and the first elongate feed slit.
33. An atomic layer deposition apparatus including a one or more
ALD heads according to any of claims 1-23, or one or more ALD head units according to any of claims 24-32.
34. The atomic layer deposition apparatus of claim 33, wherein the ALD heads are positioned such that their respective output faces form a planar or a curved surface.
35. A method for depositing a film of material onto a substrate, including moving an ALD head according to any of claims 1-23, or an ALD head unit according to any of claims 24-32, and a substrate relative to each other, while flowing a gas including the material through the first elongate feed slid towards the substrate.
36. A method of manufacturing a) a photovoltaic element, b) a battery, c) a display, d) flexible electronics, or e) packaging materials including depositing a film of material onto a substrate according to claim 35.
EP21733577.7A 2020-06-08 2021-06-08 Atomic layer deposition head and method Pending EP4162096A1 (en)

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NL2025781A NL2025781B1 (en) 2020-06-08 2020-06-08 Atomic layer deposition head and method
PCT/NL2021/050365 WO2021251822A1 (en) 2020-06-08 2021-06-08 Atomic layer deposition head and method

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7789961B2 (en) 2007-01-08 2010-09-07 Eastman Kodak Company Delivery device comprising gas diffuser for thin film deposition
KR102197576B1 (en) * 2012-11-06 2020-12-31 어플라이드 머티어리얼스, 인코포레이티드 Apparatus for spatial atomic layer deposition with recirculation and methods of use
KR102420015B1 (en) * 2015-08-28 2022-07-12 삼성전자주식회사 Shower head of Combinatorial Spatial Atomic Layer Deposition apparatus

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