EP4140042A4 - Structures haute efficacité pour communications sans fil améliorées - Google Patents
Structures haute efficacité pour communications sans fil améliorées Download PDFInfo
- Publication number
- EP4140042A4 EP4140042A4 EP21793694.7A EP21793694A EP4140042A4 EP 4140042 A4 EP4140042 A4 EP 4140042A4 EP 21793694 A EP21793694 A EP 21793694A EP 4140042 A4 EP4140042 A4 EP 4140042A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- wireless communications
- improved wireless
- efficiency structures
- structures
- efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063014247P | 2020-04-23 | 2020-04-23 | |
US202063056376P | 2020-07-24 | 2020-07-24 | |
US202063056013P | 2020-07-24 | 2020-07-24 | |
PCT/US2021/028927 WO2021217056A1 (fr) | 2020-04-23 | 2021-04-23 | Structures haute efficacité pour communications sans fil améliorées |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4140042A1 EP4140042A1 (fr) | 2023-03-01 |
EP4140042A4 true EP4140042A4 (fr) | 2024-04-24 |
Family
ID=78270219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP21793694.7A Pending EP4140042A4 (fr) | 2020-04-23 | 2021-04-23 | Structures haute efficacité pour communications sans fil améliorées |
Country Status (3)
Country | Link |
---|---|
US (1) | US20230411314A1 (fr) |
EP (1) | EP4140042A4 (fr) |
WO (1) | WO2021217056A1 (fr) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
US5559367A (en) * | 1994-07-12 | 1996-09-24 | International Business Machines Corporation | Diamond-like carbon for use in VLSI and ULSI interconnect systems |
US6090304A (en) * | 1997-08-28 | 2000-07-18 | Lam Research Corporation | Methods for selective plasma etch |
GB0508889D0 (en) * | 2005-04-29 | 2005-06-08 | Element Six Ltd | Diamond transistor and method of manufacture thereof |
US7563714B2 (en) * | 2006-01-13 | 2009-07-21 | International Business Machines Corporation | Low resistance and inductance backside through vias and methods of fabricating same |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
US9287123B2 (en) * | 2014-04-28 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films |
KR102437034B1 (ko) * | 2016-03-31 | 2022-08-29 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 전기 전도성 도금을 위한 레이저 시딩 방법 |
US10658264B2 (en) * | 2017-09-01 | 2020-05-19 | Analog Devices, Inc. | Diamond-based heat spreading substrates for integrated circuit dies |
-
2021
- 2021-04-23 EP EP21793694.7A patent/EP4140042A4/fr active Pending
- 2021-04-23 WO PCT/US2021/028927 patent/WO2021217056A1/fr unknown
-
2022
- 2022-10-20 US US18/048,373 patent/US20230411314A1/en active Pending
Non-Patent Citations (1)
Title |
---|
No further relevant documents disclosed * |
Also Published As
Publication number | Publication date |
---|---|
WO2021217056A1 (fr) | 2021-10-28 |
US20230411314A1 (en) | 2023-12-21 |
EP4140042A1 (fr) | 2023-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20221121 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230602 |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20240327 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/778 20060101ALI20240321BHEP Ipc: H01L 29/66 20060101ALI20240321BHEP Ipc: H01L 29/20 20060101ALI20240321BHEP Ipc: H01L 23/48 20060101ALI20240321BHEP Ipc: H01L 23/34 20060101ALI20240321BHEP Ipc: H04B 1/04 20060101AFI20240321BHEP |