EP4129020A1 - Substrat de support, procédé de fabrication d'un tel substrat de support et procédé de lecture d'un codage dans le substrat de support - Google Patents

Substrat de support, procédé de fabrication d'un tel substrat de support et procédé de lecture d'un codage dans le substrat de support

Info

Publication number
EP4129020A1
EP4129020A1 EP21722432.8A EP21722432A EP4129020A1 EP 4129020 A1 EP4129020 A1 EP 4129020A1 EP 21722432 A EP21722432 A EP 21722432A EP 4129020 A1 EP4129020 A1 EP 4129020A1
Authority
EP
European Patent Office
Prior art keywords
metal layer
carrier substrate
coding
layer
insulation element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21722432.8A
Other languages
German (de)
English (en)
Inventor
Tilo WELKER
Fabian Wagle
Andreas Meyer
Vitalij GIL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rogers Germany GmbH
Original Assignee
Rogers Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rogers Germany GmbH filed Critical Rogers Germany GmbH
Publication of EP4129020A1 publication Critical patent/EP4129020A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0266—Marks, test patterns or identification means
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/061—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness
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    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/403—Refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/405—Iron metal group, e.g. Co or Ni
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0275—Security details, e.g. tampering prevention or detection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09936—Marks, inscriptions, etc. for information
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16—Inspection; Monitoring; Aligning
    • H05K2203/162—Testing a finished product, e.g. heat cycle testing of solder joints
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16—Inspection; Monitoring; Aligning
    • H05K2203/163—Monitoring a manufacturing process

Definitions

  • Carrier substrate method for producing such a carrier substrate and method for reading out a code in the carrier substrate
  • the present invention relates to a carrier substrate, a method for producing such a carrier substrate and a method for reading out a code in the carrier substrate.
  • Carrier substrates for example metal-ceramic substrates, are well known as printed circuit boards or printed circuit boards from the prior art.
  • connection surfaces for electrical or electronic components and conductor tracks are arranged on one component side of the carrier substrate, wherein the electrical components and conductor tracks can be interconnected to form electrical circuits.
  • Essential components of the carrier substrates are an insulation element made of ceramic and a metal layer attached to the insulation element. Because of their comparatively high insulation strengths, insulation elements made of ceramic have proven to be particularly advantageous. By structuring the metal layer, conductor tracks and / or connection surfaces for the electrical or electronic components can be implemented.
  • the present invention makes the task of further improving the production of carrier substrates, in particular with regard to their tracing or the quality of the carrier substrates produced.
  • a carrier substrate in particular a metal-ceramic substrate, is provided as a carrier for electrical components, comprising
  • An insulation element preferably a ceramic element, a glass element, a glass ceramic element and / or a plastic element, wherein the at least one metal layer and the insulation element extend essentially parallel to a main extension plane and are arranged one above the other along a stacking direction perpendicular to the main extension plane, and wherein a coding is formed within the carrier substrate.
  • the carrier substrate is a metal-ceramic substrate.
  • the coding is arranged within the carrier substrate. This- proves to be particularly advantageous because the coding is thereby protected against possible soiling.
  • the read-out is simplified or improved, in particular compared to an optical read-out, because any reflections and / or visual restrictions that may occur during read-out no longer influence the identification or determination of the respective codes.
  • manipulation of the coding is made more difficult.
  • the insulation element made of plastic is preferably a plastic that withstands the process temperatures prevailing during soldering, in particular above 600 ° C.
  • the arrangement of the coding within the carrier substrate allows the entire top of the at least one metal layer to be used as a connection surface without the potential connection surface being reduced by the coding or the identification.
  • the identification or coding is intended to be used within the framework of a manufacturing process or within the framework of a subsequent step after the identification has been formed in the manufacturing process and / or for tracing the respective carrier substrate after the carrier substrate has been manufactured.
  • the identification or coding is preferably implemented before the structuring of the at least one metal layer in the carrier substrate.
  • the respective coding is assigned to any defects and / or errors in the connection of the at least one metal layer to the insulation element, preferably its position or location, and / or a batch number and / or a material specification that the at least one metal layer and / or the insulation element and / o which relates to the entire carrier substrate.
  • a database is preferably provided in which the codes and information, in particular information on possible positions of a fault and / or on the identification of the carrier substrate, are assigned to one another and stored.
  • the identification is preferably an individual identification which differs, for example, from carrier substrate to carrier substrate. It is preferably provided that a marking is provided in a large map and all information about all flaws within the large map is assigned to the marking, so that the positioning of the structuring and / or the predetermined breaking lines along which the large map is divided into individual carrier substrates is subdivided, can be oriented accordingly. As a result, isolation trenches and / or predetermined breaking points can preferably be placed in the area of defects or cavities. This reduces the likelihood of forming a defective carrier substrate. For this purpose, it is preferably provided that the identified errors, which are in particular assigned to the coding, are appropriately evaluated by an evaluation device in order to possibly cause a shift of the intended structure pattern or the structuring during the manufacturing process.
  • the carrier substrate is preferably designed as a printed circuit board in which, in the finished state, the at least one metal layer that is bonded to the insulation element is structured.
  • structuring for example by laser, etching and / or mechanical processing
  • the backside metallization is preferably used to counteract any deflection and the cooling element is used to effectively dissipate heat that is generated during operation from electrical or electronic components that are connected to the printed circuit board or the carrier substrate.
  • the materials for the at least one metal layer and / or the at least one further metal layer in the metal-ceramic substrate or insulation element are copper, aluminum, molybdenum, tungsten, nickel and / or their alloys such as.
  • the at least one metal layer on the finished metal-ceramic substrate, in particular as component metallization is surface-modified.
  • the ceramic element is designed as a composite or hybrid ceramic, in which several ceramic layers, each differing in terms of their material composition, are arranged one above the other and joined together to form an insulation element to combine various desired properties .
  • a metallic intermediate layer is arranged between two ceramic layers in the insulation element, which is preferably thicker than 1.5 mm and / or thicker than the total of the two ceramic layers.
  • a ceramic that is as thermally conductive as possible is preferably used for the lowest possible thermal resistance.
  • the coding is a coding which cannot be visually detected from the outside.
  • the coding is read out by means of an ultrasound device or by means of ultrasound.
  • the non-visually detectable coding is read out by means of non-visible radiation, ie radiation outside the visible wavelength spectrum, in particular by means of X-rays.
  • a coding and / or identification is in particular an individual course, in particular in the binding layer, which can be read from the outside, possibly with technical means such as an ultrasound device.
  • the binding layer is preferably the result of a connection of the at least one metal layer to the insulation element via an active metal layer and possibly a solder base layer.
  • a proportion of active metal in the adhesion promoter layer or binding layer comprising an active metal is preferably greater than 15% by weight, preferably greater than 20% by weight and particularly preferably greater than 25% by weight.
  • the roughness R a of a surface of the insulation element is at least partially greater than 1.0 gm, preferably between 0.4 gm and 1.5 gm and particularly preferably between 0.75 and 1.25 gm.
  • the surface resistance also increases with increasing roughness.
  • the side length of the at least one metal layer in the edge area is preferably determined as an extension between an upper edge of the at least one metal layer on the side facing away from the Isolationsele element, and a lower edge that delimits the metal layer on the side facing the insulation element at the outermost circumference.
  • a material bonding agent such as a solder material or its residue, is assigned to the lower edge of the at least one metal layer.
  • the lower edge In the context of the structuring of the at least one metal layer, it is customary in the prior art for the lower edge not to run in a straight line along a circumferential direction around a metal section created by the structuring, which results in a fringe-like course. This results in the length of the at least one metal layer between the upper edge and the lower Edge, measured in a direction running parallel to the main extension plane, varies along the direction of rotation. This corresponds to the formation of fringes on the outermost circumference of the at least one metal layer. The lengths of the outermost edge are stochastically distributed between the upper edge and the lower edge of the at least one metal layer.
  • a standard deviation of a length of the outer edge region of the at least one metal layer, measured between an upper and lower edge of the at least one metal layer in a direction parallel to the main extension plane is a value less than 0.4, preferably less as 0.2 and particularly preferably less than 0.1. Due to the lower scatter with regard to the length of the at least one metal layer in the edge area, it is advantageously possible to realize adjacent metal sections closer to one another, taking into account any manufacturing tolerances. This supports the formation of the most compact Lei terplatten possible.
  • the coding is arranged in a binding layer between the at least one metal layer and the insulation element.
  • a coding area in which the coding is stored is defined in a defined coding area on the carrier substrate or the large card.
  • the ultrasound device can preferably search for the coding in the carrier substrate at the same point.
  • the coding can have the form or shape of a QR code, data matrix code or bar code, in which the binding layer is interrupted or structured at points or along lines.
  • the at least one metal layer and / or the insulation element is structured on one side, ie is provided with a recessed surface course via which the at least one metal layer is connected to the insulation element in the manufactured carrier substrate.
  • a coding or marking within the carrier substrate can also be implemented through the structured course.
  • the at least one metal layer is connected to the insulation element via a binding layer.
  • An adhesion promoter layer of the binding layer preferably has a surface resistance which is greater than 5 ohm / sq, preferably greater than 10 ohm / sq and particularly preferably greater than 20 ohm / sq.
  • the adhesion promoter layer is preferably implemented or formed by a connection which, on the one hand, contains the active metal, for example titanium, and, on the other hand, the constituents of the ceramic element, for example oxygen O, nitrogen N and / or Carbon C and / or silicon Si, and / or aluminum Al and / or magnesium, Mg and / or calcium, Ca comprises.
  • the adhesion promoter layer comprises, for example, titanium nitride, titanium carbide and / or titanium oxide, in particular in different oxidation states.
  • the sheet resistance of an adhesion promoter layer of the bonding layer is greater than 5 ohm / sq, preferably greater than 10 ohm / sq and particularly preferably greater than 20 ohm / sq.
  • the surface resistance determined is directly related to a proportion of the active metal in the adhesion promoter layer, which is decisive for the connection of the at least one metal layer to the insulation element.
  • the sheet resistance increases as the proportion of active metal in the binding layer decreases.
  • a correspondingly high sheet resistance thus corresponds to a low active metal content in the adhesion promoter layer.
  • the sheet resistances according to the claims describe those bonding layers whose peel strength is improved due to the reduced formation of brittle intermetallic phases, i.e. H. is enlarged.
  • Such an increased connection strength has an advantageous effect on the service life of the carrier substrate.
  • the metal layer and, if necessary, a solder base layer are first removed again from the finished carrier substrate.
  • a surface resistance is then measured by means of a four-point measurement on the top or bottom of the carrier substrate from which the at least one metal layer and the solder base layer have been removed.
  • the sheet resistance of a material sample is to be understood as its resistance in relation to a square surface area. It is customary to mark the surface resistance with the unit ohm / sq. The physical unit of sheet resistance is ohm.
  • a thickness of the binding layer measured in the stacking direction, averaged over several measuring points within a predetermined area or in several areas that run or run parallel to the plane of extension assumes a value that is less than 20 ⁇ m, preferably is less than 10 pm and particularly preferably less than 6 pm.
  • the at least one metal layer is divided into areas of the same size as possible and in each of these areas dividing the at least one metal layer at least one measured value, preferably several measured values, is recorded for the thickness. The thicknesses determined in this way at different points are then arithmetically averaged.
  • the following method is provided for determining and selecting the measuring areas that contribute to the determination - regardless of the size of the carrier substrate:
  • the at least one metal layer of the carrier substrate is subdivided into nine rectangles, in particular squares, that is to say into several areas of approximately the same size.
  • two or three sectional images are generated, which are used to determine an average thickness for the at least one metal layer in each of the sectional images.
  • the sectional images are preferably recorded by means of an SEM method, for example at a magnification of 2000 or 2500 times.
  • the total of 18 or 27 thicknesses recorded in the cross-sectional images, which are distributed over all nine rectangular measurement areas, are averaged.
  • the averaged thickness represents a representative value for the bonding layer between the at least one metal layer and the insulation element for the entire carrier substrate.
  • the procedure described in the section wise provides averaged thicknesses, which see ge over the at least one metal layer is determined in evenly distributed measurement areas.
  • the procedure described here for selecting the measuring range that contributes to determining an averaged value for the thickness is to be used analogously for determining the surface resistance.
  • a comparatively thin bonding layer is thus formed between the at least one metal layer and the insulation element. It is provided that, in order to determine the relevant thickness of the binding layer, the measured thicknesses are averaged over a large number of measurement points which lie within a predetermined or defined area or the multiple areas.
  • the insulation element in particular the ceramic element, is generally subject to undulation, i.e. H. a ripple is to be attributed to the insulation element.
  • waviness to be a modulation of the generally flat course of the insulation element, viewed over several millimeters or centimeters along a direction which runs parallel to the plane of extension.
  • the averaged thickness value is nevertheless significantly lower than that which is known in carrier substrates from the prior art.
  • a required active metal layer is arranged between the insulation element and the at least one metal layer, which is in particular arranged individually, i.e. separately, between the insulation element and the at least one metal layer, for example, in addition to a solder base material (which for example contains no active metal or is free of active metal).
  • the active metal is preferably applied to the solder base material and / or the at least one metal layer and / or the insulation element by means of electrochemical deposition, chemical and / or physical gas phase deposition, for example by means of sputtering, in order to realize comparatively thin active metal layers which in turn lead to a comparatively thin bonding layer, in particular to a homogeneous and thin adhesion promoter layer. It is also conceivable to provide the active metal layer on the solder base material, the insulation element and / or the at least one metal layer using a plasma, in a vacuum and / or by means of vapor deposition. It is also conceivable to realize the active metal layer by electroplating. It is particularly preferred that the active metal layer is provided as a film.
  • the formation of comparatively thin binding layers in particular reduces the expenditure that has to be applied in order, for example, to remove the binding layer again in a “second etching”, at least in some areas, in order to remove the carrier substrate, in particular its at least one metal layer and the binding layer, to structure.
  • This structuring which serves to electrically isolate a plurality of metal sections of the at least one metal layer from one another, is preferably carried out by etching and / or a mechanical processing step and / or with laser light.
  • a defect in the bonding layer or a material defect in the solder material is understood to mean, for example, a large grain in the solder material, such as an active metal grain, which can lead to the formation of giant grains in the bonding layer and / or which does not melt completely and thus prevents minimal solder gaps or point defects as a spacer.
  • the application in particular by means of sputtering, can easily prevent comparatively large grains from becoming part of the active metal layer.
  • a thin binding layer is formed homogeneously over the carrier substrate produced.
  • Another object of the present invention is a method for the produc- tion of a carrier substrate according to the invention. All of the advantages or features described for the carrier substrate can be transferred analogously to the process for producing the carrier substrate.
  • the method preferably comprises the method steps:
  • the targeted, area-wise covering with the active metal layer in other words with the structuring of the active metal layer, defines which areas in the manufactured carrier substrate form a bonding layer between the insulation element and the at least one metal layer.
  • the active metal layer proves to be particularly advantageous because it specifically induces an area-wide and uninterrupted formation of a binding layer and there is no risk that certain areas on the insulation element will not be wetted by the active metal (which leads to areas without a binding layer which in turn could be misunderstood as part of the coding).
  • a solder base material layer is applied in addition to the active metal layer, which under the respective process temperatures for the solder base material in the context of an active soldering process Connection of the at least one metal layer leads to the insulation element.
  • the active element or the active metal layer is connected to the insulation element in the course of hot isostatic pressing or solid state diffusion bonding (SDB).
  • SDB solid state diffusion bonding
  • no solder base material layer is required for connecting the at least one metal layer to the insulation element.
  • the use of a solder base material proves to be advantageous for the formation of the coding insofar as it is ensured that a sufficient distance is formed between the insulation element and the at least one metal layer, which allows easy identification or reading, in particular with ultrasound.
  • the active metal layer is structured subsequently.
  • the active metal layer is applied over the surface and then removed again, preferably in specific areas, in order to structure it.
  • the active metal layer is preferably applied over a large area and removed again, for example, by etching and / or by laser light.
  • the active metal layer is implemented by physical gas phase deposition and / or using a masking and / or is implemented after the application of the active metal layer, for example by removing areas of an applied active metal layer, preferably by means of laser light .
  • the active metal layer is provided as a film that has been specially structured, for example, by laser, embossing, folding and / or rolling.
  • the active metal layer is advantageously possible to implement comparatively thin active metal layers.
  • structures that are as precise and precise as possible can be incorporated into the active metal layer.
  • the active metal layer is applied by means of a physical gas phase deposition and removed again in some areas by means of laser light in order to cause structuring in the active metal layer.
  • a separately listed active metal layer it is possible to make it comparatively thin, whereby the comparatively thin thicknesses of the binding layer according to the claim can be achieved, in particular averaged over various measured values within the fixed area. It is preferably provided that a thickness of the bonding layer measured in the stacking direction, averaged over several measuring points within a predetermined area or in several areas that run or run parallel to the main plane of extension, assumes a value that is less than 20 ⁇ m, preferably is smaller than 12 pm and particularly preferably smaller than 6 pm.
  • the at least one metal layer is subdivided into areas of the same size as possible and at least one value, preferably several measured values, are recorded for the thickness in each of these areas dividing the at least one metal layer.
  • the thicknesses determined in this way at different points are arithmetically averaged.
  • the binding layer and / or the further binding layer is a flaft mediator layer comprising an active metal.
  • the bonding layer is formed only from the flaft mediator layer which comprises the active metal.
  • the flaft mediator layer in the binding layer has a connection with a component of the ceramic element, such as nitrogen, oxygen or carbon, and the other components of the ceramic.
  • the flaft-mediating layer comprises, for example, titanium nitride, titanium oxide and / or titanium carbide.
  • a thickness of the binding layer measured in the stacking direction, averaged over several measurement points within an area that runs parallel to the plane of extension of the flakes, or of the several areas assumes a value that is less than 0.003 mm, preferably less than 0.001 mm and particularly preferably less than 0.0005 or even less than 0.00035 mm.
  • an even thinner bonding layer can be formed in a corresponding manner.
  • an active metal examples include titanium (Ti), zirconium (Zr), hafnium (Hf), chromium (Cr), niobium (Nb), cerium (Ce), tantalum (Ta), magnesium (Mg), lanthanum (La) and Vanadium (V). It should be noted that the metals La, Ce, Ca and Mg can easily oxidize in air or in the presence of oxygen.
  • the elements Cr, Mo and W are not classic active metals, but are suitable as a contact layer between S13N4 and the at least one metal layer or the solder system or solder material, since they do not have any with the at least one metal layer, for example copper Form intermetallic phases and have no edge solubility
  • the solder base material is a metal-based base material, preferably a silver-based or a copper-based base material.
  • silver is the main component, ie the constituent with the highest percentage in terms of weight, while copper is the main component in a copper-based base material.
  • Examples of a silver-based base material are AgCu, in particular AgCu28, AgCuln, AgCuSn and AgCuGa.
  • Examples of a copper-based base material are copper CuSn, CuAg, Culn, CuGa, CulnSn, CulnMn, CuGaSn. It is also conceivable to use NiCrMn or SnCu as a base material for solder.
  • an active metal layer is used whose thickness is between 10 nm and 1000 nm, preferably between 50 nm and 750 nm, particularly preferably between 100 and 500 nm Gasphasenab separates on the insulation element and / or the solder base material, which is preferably also designed as a film, is applied.
  • the active metal is rolled down to the desired thickness together with the solder material in order to form a comparatively thin bonding layer between the at least one metal layer and the insulation element.
  • a solder foil is preferably used which is smaller than 20 ⁇ m, preferably smaller than 12 ⁇ m and particularly preferably smaller than 8 ⁇ m.
  • the thickness of the solder layer assumes a value between 2 and 20 gm or between 2 and 5 gm between preferably between 8 and 15 gm and particularly preferably between 5 and 10 gm.
  • the solder base material is provided as a film, as a paste, as a layer created by physical gas phase deposition, and / or as an electrochemically formed layer.
  • a method for producing a carrier substrate comprising:
  • soldering layer in particular in the form of at least one soldering foil or hard soldering foil,
  • soldering layer Arranging the at least one soldering layer between the insulation element and the at least one metal layer along a stacking direction with the formation of a soldering system which comprises the at least one soldering layer and the at least one active metal layer, a soldering material of the at least one soldering layer preferably being free of a material that lowers the melting point or free of phosphorus is and
  • a multilayer soldering system consisting of at least one soldering layer, preferably free of elements that lower the melting point, particularly preferably composed of a phosphorus-free soldering layer, and at least one active metal layer, is provided.
  • the separation of the at least one active metal layer and the at least one solder layer proves to be particularly advantageous because it enables comparatively thin solder layers to be realized, especially if the solder layer is a foil.
  • soldering materials containing active metals comparatively large solder layer thicknesses have to be implemented because of the brittle intermetallic phases or the high modulus of elasticity and high yield point of the common active metals and their intermetallic phases, which hinder the deformation of the solder paste or solder layer, which results in the minimum layer thickness is limited by the manufacturing properties of the active metal-containing solder material.
  • active metal-containing solder layers it is not the minimum thickness required for the joining process that determines the minimum solder layer thickness of the solder layer, but rather the minimum solder layer thickness for the technically feasible minimum layer thickness of the solder layer determines the minimum solder layer thickness of the solder layer.
  • this thicker, active metal-containing solder layer is more expensive than thin layers.
  • the person skilled in the art understands phosphorus-free in particular to mean that the proportion of phosphorus in the solder layer is less than 150 ppm, less than 100 ppm and particularly preferably less than 50 ppm.
  • the further steps comprising:
  • hot isostatic pressing it is provided in particular that the receipt is made by heating under pressure, as in sintering, in which the first and / or the second metal layer of the metal container, in particular the later metal layer of the carrier substrate and any eutectic (oxide) )layer does not enter the melting phase.
  • lower temperatures are required in hot isostatic pressing than in a direct metal connection process, in particular a DCB process.
  • a solder base material can advantageously be dispensed with in the present procedure and only one active metal is required .
  • the use or utilization of the pressure during hot isostatic pressing also proves to be advantageous because it allows air inclusions or cavities between the first metal layer and / or the second metal layer on the one hand and the ceramic element on the other hand to be reduced, whereby the formation of voids in it rer frequency in the formed or manufactured metal-ceramic substrate can be reduced or even avoided. This has an advantageous effect on the quality of the bond between the metal layer or the first and / or second metal layer of the metal container and the ceramic element.
  • a melting temperature of the additional solder material can be lower than the temperature at which the hot isostatic pressing is carried out, i.e. H. less than the melting temperature of the at least one metal layer.
  • a gas pressure between 100 and 2000 bar, preferably between 150 and 1200 bar and particularly preferably between 300 and 1000 bar and a process temperature of 300 ° C up to a Temperature below the melting temperature of the at least one metal layer, is exposed.
  • a metal layer ie a first and / or second metal layer of the Metallbe container, to the ceramic element without the required temperatures of a direct metal connection process, such as a DCB or egg nem DAB process, and / or without a solder base material that is used in active soldering.
  • the method comprises the method steps:
  • a recess or a plurality of recesses for the formation of a second partial area or for the formation of the coding is embedded.
  • the corresponding formation of a recess increases the distance between the insulation element and the solder system, in particular to the at least one metal layer, so that the at least one metal layer is not connected to the insulation element in the said area or in the areas with a recess.
  • a corresponding recess is formed in a cover layer of the insulation element in order to form such recesses.
  • the insulation element has a core layer and at least one cover layer, the cover layer covering the core element.
  • the plate-shaped core element is first coated with a pasty and / or granular and / or powdery ceramic layer and in the frame a hot pressing under mechanical action is attached to the core layer.
  • a hot pressing under mechanical action is attached to the core layer.
  • Another object of the present invention is a method for reading out a marking in a carrier substrate according to the invention. All of the advantages and properties described for the method for producing the carrier substrate and for the carrier substrate can be transferred analogously to the method for reading out an identifier in a carrier substrate. It is preferably provided that a read-out device is used, in particular an ultrasonic device with which the identifier of the carrier substrate is read out.
  • the readout device is preferably positioned above the carrier substrate and the readout device is preferably connected in a communicating manner to a production facility in which the carrier substrate is manufactured, in particular in which the carrier substrate is structured.
  • the read-out device is connected to an evaluation device which receives information about the coding or identification. In this way, it is advantageously possible to use the coding to determine the placement of the structuring.
  • Embodiment of the present invention 2: schematically a carrier substrate according to a second preferred embodiment of the present invention
  • a carrier substrate 1 is shown schematically according to a first preferred embodiment of the present invention.
  • a carrier substrate 1 is preferably used as a carrier of electronic or electrical construction parts that can be connected to the carrier substrate 1, d. H. as a printed circuit board or PCB.
  • Essential components of such a carrier substrate 1 are an insulation element 30 extending along a main extension plane HSE and at least one metal layer 10 attached to the insulation element 30.
  • the insulation element 30 is made of at least one material comprising a ceramic.
  • the at least one metal layer 10 and the insulation element 30 are arranged one above the other along a stacking direction S running perpendicular to the main extension plane HSE and, in a finished state, are at least partially connected to one another by a bonding layer 15.
  • the at least one metal layer 10 and the bonding layer 15 are then preferably structured to form conductor tracks or connection points for the electrical components. For example, this structuring is etched into the at least one metal layer 10. In advance, however, a permanent bond, in particular a material connection, must be formed between the at least one metal layer 10 and the insulation element 30.
  • At least one further metal layer 20 is provided next to the at least one metal layer 10 on the insulation element 30 on an opposite side.
  • the at least one further metal layer 20 serves as the rear side metallization of the carrier substrate 1.
  • the further metal layer 20 preferably forms a rear side metallization and / or at least part of a cooling body.
  • the carrier substrate 1 is provided with a coding 18 or an identification.
  • This is preferably an individual coding 18 which, for example, allows the carrier substrate 1 to be traced back.
  • This makes it possible, for example, by means of the coding 18 to determine in which batch the carrier substrate 1 was produced and / or which starting materials, for example for the insulation element 30, the at least one metal layer 10 and / or a possibly used solder system, have been used here.
  • the respective carrier substrate 1 and the corresponding coding 18 are each assigned information that is stored, for example, in a database, in particular on a server, and viewed, for example, by a user who has purchased the carrier substrate 1 so that traceability is possible.
  • the coding 18 or identification is used to pass on information within the scope of the manufacturing process, for example information that contains the location of defects, in particular voids, in the carrier substrate 1.
  • information can advantageously be used during structuring to align the position of the structuring in such a way that metal is removed from the at least one metal layer 10 in particular in the area with voids and / o the flaws. This reduces the number of rejects on incorrectly produced carrier substrates 1.
  • the information is stored in a database, in particular on a server or a network, together with the corresponding coding 18. If the coding 18 is identified in this way, the corresponding information can be assigned to the coding 18 and thus to the carrier substrate 1. This can then in turn be used for the following manufacturing process.
  • the embodiment of Figure 1 is characterized in that the coding 18 in, d. H. is arranged within the carrier substrate 1.
  • the coding 18 is therefore not visually detectable from the outside, i. H. it is a coding that cannot be visually detected.
  • the coding 18 is let into the binding layer 15 and is thus formed between the at least one metal layer 10 and the insulation element 30.
  • such a coding 18 can be read out by means of an ultrasound device.
  • the arrangement of the coding 18 within the carrier substrate 1 proves to be advantageous that when reading out the coding 18 reflections and / or shadows that make reading more difficult would not have to be taken into account. In addition, it is prevented that soiling affects the codes 18 in such a way that they can no longer be read out. In addition, manipulation of the coding 18 is made more difficult.
  • the identification or coding18 is preferably achieved in that the binding layer 10 is structured, that is, first sub-areas and second sub-areas exist in the manufactured carrier substrate 1, a binding layer 15 being arranged between the at least one metal layer 10 and the insulation element 30 in the first sub-area and no binding layer for forming an interrupted or structured binding layer between the at least one metal layer 10 and the insulation element 30 is arranged in a second partial area.
  • the internal coding is also formed by a corresponding formation of back jumps in the insulation element 30 and the at least one metal layer 10 in the surface sides facing the binding layer.
  • the coding 18 is formed in a metal section of the at least one metal layer 10, in particular only in a single metal section of the carrier substrate 1.
  • the carrier substrate 1 comprises a coding area 19 or section, the coding area 19 or section preferably being arranged in a series of carrier substrates 1 at the same position or essentially in the same position, the coding 18 itself from Can differentiate between carrier substrate 1 and carrier substrate 1.
  • a carrier substrate 1 is provided according to a second exemplary embodiment.
  • the view shown in FIG. 2 shows a plan view of the carrier substrate 1 at the top.
  • a coding area 19 with the coding 18 is shown, which indicates that first and second subsections are provided in a specific area or in a surface area.
  • the first and second partial areas, ie in particular the structuring of the binding layer 15, are designed in such a way that their placement within the coding area 19 defines the identification or coding 18.
  • the coding 18 is a machine-readable identification, for example a bar coding, a QR code, data matrix code, or the like.
  • the coding 18 is limited to one surface area, namely the coding area 19. As the lower section in FIG.
  • FIGS. 3a-3d a method is shown schematically in accordance with an exemplary embodiment of the present invention for producing a carrier substrate 1.
  • the connection of the at least one metal layer 10 to the insulation element 30 is carried out via an active metal layer 17.
  • the active metal is applied in a structured manner to form a structured active metal layer 17 as part of a physical gas phase deposition, in particular in the form of sputtering.
  • a masking or mask 25 is used, for example, with which it is possible to form active metal in specific areas for forming the active metal layer 17 on the insulation element 30.
  • the active metal layer 17 is provided as a film in which a structuring is incorporated into the active metal layer 17, for example by punching and / or embossing.
  • the active metal for forming the active metal layer 17 as a structured film is first connected to a solder base material before the connection to the insulation element 30 takes place.
  • the active metal layer 17 is applied over a large area. Structuring is then deliberately incorporated into the active metal layer 17 by means of lasers.
  • a solder system is used which, in addition to the active metal in the active metal layer 17, includes a solder base material layer 16 made from the solder base material.
  • the active metal layer 17 and the solder base material layer 16 form separate layers. This advantageously ensures that a flat and continuous binding layer is formed over the active metal layer 17, that is, without an intentional interruption in the binding layer 15 outside the areas that do not form a binding layer 15 due to the structuring of the active metal layer 17. This proves to be particularly advantageous because it can ensure that areas without a bonding layer 15 between the at least one metal layer 10 and the insulation element 30 are not accidentally caused by a lack of available active metal.
  • the finished carrier substrate 1 with the binding layer 15 is shown in FIG. 3c, the binding layer 15 being structured to form the coding 18 in the coding region 19.
  • FIG. 3d shows the structured carrier substrate 1, the structuring taking place following the connection of the at least one metal layer to the insulation element, and in particular following the formation of the coding 18 or marking.
  • sections or portions of the at least one metal layer 10 and the binding layer 15 are preferably etched away, preferably outside the coding area 19. It would also be conceivable for the structuring to be carried out by mechanical processing. Furthermore, it is conceivable to remove the at least one metal layer 10 again at least in sections in the coding region 19 in order to expose the structured binding layer 15. The code 19 exposed in this way can then be read out optically, for example.
  • the method is characterized in that the coding 18 is already implemented or is implemented at the same time as the connection of the at least one metal layer to the insulation element.
  • any errors or voids are assigned to the respective coding 18 only after the connection, in particular after the coding 18 has been produced.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne un substrat de support (1), en particulier en tant que support pour composants électriques, comprenant : - au moins une couche métallique (10) et- un élément isolant (30). La ou les couches métalliques (10) et l'élément isolant (30) s'étendent sensiblement parallèlement à un plan d'extension principal (HSE) et sont disposées l'une sur l'autre dans une direction d'empilement (S) s'étendant perpendiculairement au plan d'extension principal (HSE), et un codage (18) est formé à l'intérieur du substrat de support (10).
EP21722432.8A 2020-04-29 2021-04-28 Substrat de support, procédé de fabrication d'un tel substrat de support et procédé de lecture d'un codage dans le substrat de support Pending EP4129020A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102020111701.9A DE102020111701A1 (de) 2020-04-29 2020-04-29 Trägersubstrat, Verfahren zur Herstellung eines solchen Trägersubstrats und Verfahren zum Auslesen einer Kodierung im Trägersubstrat
PCT/EP2021/061059 WO2021219688A1 (fr) 2020-04-29 2021-04-28 Substrat de support, procédé de fabrication d'un tel substrat de support et procédé de lecture d'un codage dans le substrat de support

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DE10038998A1 (de) 2000-08-10 2002-02-21 Bosch Gmbh Robert Halbleiterbauelement und Verfahren zur Identifizierung eines Halbleiterbauelementes
JP2006202978A (ja) * 2005-01-20 2006-08-03 Sharp Corp プリント配線基板およびプリント配線基板の識別方法
TWI311369B (en) * 2006-03-24 2009-06-21 Advanced Semiconductor Eng Method for fabricating identification code on a substrate
US20090211785A1 (en) * 2008-02-21 2009-08-27 Lovskog J Thomas Printed circuit board with edge markings
US9360589B1 (en) * 2013-04-23 2016-06-07 Lockheed Martin Corporation Articles containing non-visible identifying marks formed from carbon nanomaterials and methods utilizing the same
DE102013113734B4 (de) 2013-12-10 2018-03-08 Rogers Germany Gmbh Verfahren zum Herstellen eines Metall-Keramik-Substrates
EP3185655B8 (fr) 2015-12-22 2024-01-03 Heraeus Electronics GmbH & Co. KG Procédé de codage individuel de substrats métal-céramiques
EP3361504A1 (fr) 2017-02-14 2018-08-15 Infineon Technologies AG Substrat pour electronique de puissance avec un marqueur, procede de fabrication dudit substrat et de detection dudit marqueur
US10854554B2 (en) 2018-01-23 2020-12-01 Ferro Corporation Carbide, nitride and silicide enhancers for laser absorption

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