EP4125152A1 - Doppelmodusverbindungsanordnung zwischen integrierten hochfrequenzschaltungen und einem kunststoffwellenleiter - Google Patents

Doppelmodusverbindungsanordnung zwischen integrierten hochfrequenzschaltungen und einem kunststoffwellenleiter Download PDF

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Publication number
EP4125152A1
EP4125152A1 EP21188951.4A EP21188951A EP4125152A1 EP 4125152 A1 EP4125152 A1 EP 4125152A1 EP 21188951 A EP21188951 A EP 21188951A EP 4125152 A1 EP4125152 A1 EP 4125152A1
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EP
European Patent Office
Prior art keywords
printed circuit
dual
interconnect assembly
twist
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21188951.4A
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English (en)
French (fr)
Inventor
Luan Vu
David GONZALEZ OVEJERO
Ronan Sauleau
Mauro Ettorre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptiv Technologies Ltd
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Institut National des Sciences Appliquees de Rennes
Universite de Nantes
CentraleSupelec
Original Assignee
Aptiv Technologies Ltd
Centre National de la Recherche Scientifique CNRS
Universite de Rennes 1
Institut National des Sciences Appliquees de Rennes
Universite de Nantes
CentraleSupelec
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aptiv Technologies Ltd, Centre National de la Recherche Scientifique CNRS, Universite de Rennes 1, Institut National des Sciences Appliquees de Rennes, Universite de Nantes, CentraleSupelec filed Critical Aptiv Technologies Ltd
Priority to EP21188951.4A priority Critical patent/EP4125152A1/de
Publication of EP4125152A1 publication Critical patent/EP4125152A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/087—Transitions to a dielectric waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/02—Bends; Corners; Twists
    • H01P1/022—Bends; Corners; Twists in waveguides of polygonal cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H01P1/161—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion sustaining two independent orthogonal modes, e.g. orthomode transducer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/165—Auxiliary devices for rotating the plane of polarisation

Definitions

  • the disclosure generally relates to communication systems wherein data are transferred through plastic waveguides. More particularly, this disclosure relates to a dual-mode interconnect assembly between radio-frequency integrated circuits and at least one plastic waveguide. For example, this disclosure finds applications in the field of connectors for automotive vehicles.
  • Automotive vehicles are more and more equipped with sensors, calculators and various electronic devices.
  • information signals transmitted through the information network comprising such sensors, calculators and electronic devices be reliable and not disturbed by electromagnetic interferences (EMI).
  • EMI electromagnetic interferences
  • Plastic waveguide communication links appear as a potential solution for automotive in the future.
  • Plastic waveguides are relatively cheap compared to copper wires or optical fibres. They have many other advantages. For example, they provide a large bandwidth, they may be less sensitive than metallic conductors to EMI issues, they allow less severe alignment requirements than optical fibres (therefore they allow for a relatively easy assembly), they are compatible with CMOS circuits and they allow for coherent detection.
  • Plastic waveguide communication links can be used in full-duplex two-way communication systems wherein data are transferred simultaneously in two opposite ways (see for example " Polymer Microwave Fibres: A New Approach That Blends Wireline, Optical, and Wireless Communication", to De WIT MAXIME et AL, IEEE Microwave magazine, IEEESERVICE CENTER, Piscataway, NJ, US, vol. 21, no 1,1 January 2020, pages 51-66, XP011758664, ISSN: 1527-3342, DOI: 10.1109/MMM.2019.2945158 ). It is known that full-duplex bi-directional transmissions can be achieved in a single plastic waveguide with polarized electromagnetic waves.
  • Polarized electromagnetic waves can be obtained for example with an orthomode transducer (OMT) or an orthomode junction (OMJ).
  • OMT orthomode transducer
  • OMJ orthomode junction
  • An OMT and an OMJ both serve either to separate or to combine two orthogonally polarized microwaves of the same frequency.
  • Classical OMTs are made of metal and have a relatively complex structure.
  • the present disclosure provides a dual-mode interconnect assembly comprising an OMT and a twist converter component, both made using substrate integrated waveguide (SIW) technology.
  • SIW substrate integrated waveguide
  • the present disclosure provides a dual-mode interconnect assembly according to claim 1.
  • the dual-mode interconnect assembly of claim 1 has an improved mechanical robustness, in particular because it does not require a connection configuration with a plastic waveguide perpendicular to the plane of the printed circuit. Contrary to the claimed interconnect assembly, such a perpendicular configuration is relatively unstable and not compatible with automotive applications. Further, there is no need to attach a relatively heavy metallic component to a PCB. It also presents a good performance because there are less losses between the plastic waveguide and the transmission lines connected to the integrated circuits. Further, this is compatible dual-mode interconnect assembly with classical RF components (e.g. connectors).
  • classical RF components e.g. connectors
  • This dual-mode interconnect assembly may also optionally include one and / or the other of the features of any one of claims 2 to 10.
  • the disclosure also relates to a printed circuit board according to claim 11.
  • the disclosure also relates to a connector according to claim 12.
  • an example of an interconnect assembly 1 comprises a first connector assembly 2, a second connector assembly 3 and a plastic waveguide 4 interconnecting the first and second connector assemblies 2, 3.
  • the interconnect assembly 1 is designed to transmit millimetre-waves between the first and second connector assemblies 2, 3 along the plastic waveguide 4.
  • the plastic waveguide 4 has a symmetrical cross-section (circle, square, etc.).
  • Both the first and second connector assemblies 2, 3 respectively comprises a connector and a counter-connector.
  • the connector and counter-connector are the same in the first connector assembly 2 as in the second connector assembly 3.
  • the connector is a plug connector 5 and the counter-connector is a header 6.
  • the plug connector 5 is a cable connector and the header 6 is an edge connector.
  • Each edge connector is mounted on a respective printed circuit board 7.
  • at least two RFICs 8, 9, respectively 8', 9' are mounted on each printed circuit board 7. These two RFICs 8, 9 (8', 9') are respectively a TX chip (for transmission) and a RX chip (for reception).
  • each RFIC 8 or 9 (8' or 9') may be a CMOS chip in the form of a millimetric-wave integrated circuit.
  • Each one of these two RFICs 8, 9 (8', 9') is connected to a respective transmission line 10.
  • the transmission lines 10 connected to these two RFICs extend respectively along a longitudinal direction LD.
  • the longitudinal directions LD of the transmission lines 10 are parallel.
  • the longitudinal directions LD of the transmission lines are perpendicular.
  • each transmission line 10 comprises a GCPW portion 11 (where GCPW stands for Grounded Co-Planar Waveguide).
  • Each GCPW portion 11 is in continuity with a funnel shaped portion 12 which serves as a transition portion from the GCPW portion 11 to a SIW portion 21 (where SIW stands for Substrate Integrated Waveguide).
  • SIW Substrate Integrated Waveguide
  • the respective structures of the GCPW portion 11 and the funnel shaped portion 12 are disclosed in the European patent application # 21156713 which is incorporated by reference (the GCPW portion 11 of the present disclosure corresponds to the transmission line disclosed - with the reference number 8 - in the European patent application # 21156713 , and the funnel shaped portion 12 of the present disclosure corresponds to the third multilayer section disclosed - with the reference 31 - in the European patent application # 21156713 ).
  • the interconnect assembly 1 further comprises, at each end of the plastic waveguide 4, an OMT portion 13 and a twist converter portion 14.
  • the OMT portion 13 and twist converter portion 14 are connected to a respective RFIC 8 or 9 (8' or 9') via a transmission line 10.
  • the OMT portion 13 and the twist converter portion 14 are made from different PCBs, which are themselves different from the PCB 7 supporting the RFICs 8, 9 (8', 9') and the transmission lines 10.
  • the OMT portion 13 is aligned with the longitudinal direction of the plastic waveguide 4 (in the illustrated embodiments the longitudinal direction of the plastic waveguide 4 corresponds to the mating direction of the plug connector 5).
  • the OMT portion 13 comprises a multilayer PCB.
  • the total thickness of the multilayer PCB may be for example 2.06mm.
  • the OMT portion 13 comprises six copper layers 15.
  • each copper layer 15 may be 17.5 micrometres thick.
  • the OMT portion 13 may also comprise five dielectric layers 16, each respectively interposed between two adjacent copper layers 15.
  • the thicknesses of the dielectric layers are respectively, from one main face of the PCB to the other face, 0.504mm, 0.127mm, 0.381mm. 0.127mm and 0.504mm.
  • the laminate substrates 17 in the dielectric layers 16 have various thicknesses.
  • the OMT portion 13 has conductive vias connecting various copper layers 15. Each via extends essentially perpendicular to the copper layers 15 and dielectric layers 16.
  • vias V_61 connect the copper layer #1 to the copper layer #6
  • vias V_65 connect the copper layer #6 to the copper layer #5 and vias V_12 the copper layer #1 to the copper layer #2.
  • Vias V_65 and vias V_12 prevent leakages.
  • vias V_61, V_65 and V_12 are cylindrical with a diameter of 0.4mm, and a centre-to-centre distance between two vias that are side by side of 0.8mm for vias V_61 and 0.7mm for vias V_65 and V12.
  • Vias V_61 are roughly aligned in respective rows so as to continue the alignments of the vias of the respective SIW portion 21.
  • the waves transmitted through the first input channel 22 are polarized according to the TE 10 y propagation mode (where TE stands for Transverse Electric).
  • Two longitudinal trenches 19 extend respectively essentially aligned with a row of Vias V_61.
  • Two transversal trenches 23 extend perpendicular to a row of Vias V_61. One end of one of these transversal trenches 23 is close to one of the rows of four vias V_61.
  • These two transversal trenches 23 delimit a second input channel 32 of the OMT portion.
  • the waves transmitted through the second input channel 32 are polarized according to the TE 10 x propagation mode, which is orthogonal to the TE 10 y propagation mode.
  • Vias V_65 and V_12 control the direction of the TE 10 x mode from the second input channel 32 so as to transform it into a horizontal mode at the output 33 of the OMT portion 13.
  • the mode TE 10 y is excited from the first input channel 22 between layer #5 and layer #2.
  • the TE 10 y mode spreads out in all dielectric layers 16 between layer #1 and layer #6 to create the vertical mode at the output 33 of the OMT portion 13. Vias V_65 and V_12 prevent leakages of TE 10 y during this transformation.
  • the longitudinal and transversal trenches 19, 23 are formed through the entire thickness of the multilayer stack-up of copper layers 15 and dielectric layers 16 with a minimum width of 0.4mm.
  • the width of the trenches 19, 23 does not impact the performances of the OMT portion 13.
  • the width can be increased to adapt to the PCB fabrication.
  • the surface of these longitudinal and transversal trenches 19, 23 are metallized so as to form metallized walls 20.
  • the centre-to-centre distance between the longitudinal trenches 19 is about 2.4mm for an OMT portion 13 working in the V band (50 to 75 GHz)
  • the distance between the transversal trenches 23 is about 1.4mm for an OMT portion 13 working in the V band.
  • Vias V_65 are aligned in a row of six vias V_65. This row extends essentially from the end of a transversal trench which is close to one of the rows of four vias V_61, to the longitudinal trench 19 continuing the other rows of four vias V_61.
  • the angle between the row of vias V_65 and the longitudinal trench is about 28 degrees for an OMT portion 13 working in the V band.
  • Openings are cut or etched through the various copper layers 15 (See FIG. 6 ).
  • the openings made through the copper layers #1 and #6 are the same and correspond to the longitudinal trenches 19, the transversal trenches 23, as well as the vias V_61 and V_12.
  • the openings made through the copper layers #2 and #5 are the same and correspond to the longitudinal trenches 19, the transversal trenches 23, as well as the vias V_61 and V_12. Further, the copper layer is removed between the transversal trenches 23, as well as in a first coupling region 24 essentially delimited by portions of the longitudinal trenches 19 and the row of vias V_65.
  • the openings made through the copper layers #3 and #4 are the same and correspond to the longitudinal trenches 19, the transversal trenches 23, as well as the vias V_61. Further, the copper layer is removed between the transversal trenches 23, as well as in a second coupling region 25 essentially delimited by the longitudinal trenches 19, the transversal trenches 23 and the row of vias V_61.
  • the twist converter portion 14 also comprises a multilayer PCB.
  • the twist converter portion 14 comprises six copper layers 15, five dielectric layers 16 and prepreg layers 18 which are identical or similar to those already described in relation to the OMT portion 13.
  • the twist converter portion 14 has also conductive vias connecting various copper layers 15. Each via extends essentially perpendicular to the copper layers 15 and dielectric layers 16.
  • vias V_61 connect the copper layer #1 to the copper layer #6
  • vias V_65 connect the copper layer #6 to the copper layer #5 and vias V_12 the copper layer #1 to the copper layer #2.
  • Vias V_65 and vias V_12 prevent leakages.
  • Vias V_61, V_65 and V_12 are cylindrical with a diameter of 0.4mm and a centre-to-centre distance of 0.8mm (for an OMT portion 13 working in the V band).
  • vias V_13 and V_64 which are rectangular (for example, 1mmx0.7mm). Vias V_13 and V_64 rotate the TE 10 mode of 90 degrees.
  • Vias V_61 are roughly aligned in respective rows so as to continue the alignments of the vias of the respective SIW portion 21.
  • There are five vias V_61 in each row (of course as it is a portion of transmission line, it can be longer and the rows may comprise more vias, for example).
  • These two rows of five vias V_61 delimit an input channel 26 of the twist converter portion.
  • the waves transmitted through the input 26 are polarized according to the TE 10 y propagation mode.
  • Two longitudinal trenches 27 extend respectively essentially aligned with a row of Vias V_61.
  • the distance between the two closest edges of the longitudinal trenches 27 is about 1mm (for an OMT portion 13 working in the V band). They have a minimum width of 0.4 mm (for an OMT portion 13 working in the V band).
  • the surface of these longitudinal trenches 27 are metallized so as to form walls 20 which prevent leakages.
  • the vias V_12 are aligned perpendicular to the longitudinal trenches 27.
  • the vias V_12 are located close to the end of a longitudinal trench 27. This end of this longitudinal trench 27 is close to the row of vias V_61.
  • the via V_13 extends from the other longitudinal trench 27.
  • the row of vias V_12 through the layers #1 and #2 extends from a longitudinal trench 27 (lefthand side in FIG. 9 ), whereas the row of vias V_65 through the layers #6 and #5 extends from the other longitudinal trench 27 (right-hand side in FIG. 9 ).
  • the respective positions of the vias V_12 and V_13 are staggered.
  • the respective positions of the vias V_65 and V_64 are staggered.
  • Openings are cut or etched through the various copper layers 15 (See FIG. 9 ).
  • the openings made through the copper layers #1 and 6 are the same and correspond essentially to the longitudinal trenches 27, the vias V_61, as well as vias V_12 and V_13 (respectively V_65 and V64).
  • the openings made through the copper layer #2 and 5 are the same and correspond to the longitudinal trenches 27, the vias V_61, as well as vias V_12 and V_13 (respectively V_65 and V64). Further, the copper layer is removed in a region between the longitudinal trenches 27.
  • the openings made through the copper layer #3 and 4 are the same and correspond to the longitudinal trenches 27. Further, the copper layer is removed in a region between the longitudinal trenches 27 and between the two rows of vias V_61.
  • the plug connector 5 comprises a housing for accommodating the OMT portion 13 and the twist converter portion 14, as well as a coupler 28 such as one of the couplers disclosed for example in the European patent application # 21156713 .
  • the coupler 28 is made of a metallic piece with a tubular portion 29 having a shape and dimensions adapted for receiving, along an insertion direction ID, the end of a plastic waveguide 5 therein.
  • the coupler 28 may also comprise a horn antenna 30.
  • the horn antenna 30 is conical shaped with a vertex connected to the free end of the tubular potion 29.
  • the edge and plug connectors When the edge and plug connectors are mated the OMT portion and the twist converter portion face and contact the edge of the PCB 7 (in this document, the edge corresponds to the thickness face of the PCB).
  • the transmission lines 10 are parallel. Therefore, a curved SIW portion 31 is necessary for connecting one of the SIW portion 21 of the parallel transmission lines 10, the other SIW portion 21 being in parallel alignment with the OMT portion.
  • the transmission lines 10 are perpendicular so that the OMT portion 13 and twist converter portion 14 directly face a respective transmission line 10.
  • the RFIC 8 sends data to RFIC 8' (RX) using the fundamental mode HE 11 x (where HE stands for Hybrid Electromagnetic) of the plastic waveguide 4 and at the same time the RFIC 9' (TX) sends data to RFIC 9 (RX) using the HE 11 y mode of the plastic waveguide.
  • HE 11 x and HE 11 y modes of the symmetric plastic waveguide 4 are orthogonal they can provide two independent channels covering a bandwidth of interest.
  • the OMT portion 13 can be excited by two modes TE 10 y and TE 10 x respectively at the first 22 and second 32 input channels.
  • the OMT portion 13 then enable to mix these modes and transform them into dual- polarized modes, TE 10 y and TE 10 x , at its output 33.
  • These dual- polarized modes TE 10 y and TE 10 x are respectively converted into TE 11 y and TE 11 x modes at the tubular portion 29.
  • the horn antenna 30 respectively transforms TE 11 y and TE 11 x modes of the tubular portion 29 into the HE 11 y and HE 11 x modes of the plastic waveguide 4.
  • the simulated results of the transition from the OMT portion 13 to the plastic waveguide 4 presents over about 30.7 percent of the bandwidth, 1.22 dB of maximum insertion loss and about 50 dB of isolation between two HE 11 y and HE 11 x modes.
  • the various vias mentioned above are not necessarily cylindrical. They may have a rectangular cross-section.

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  • Coupling Device And Connection With Printed Circuit (AREA)
EP21188951.4A 2021-07-30 2021-07-30 Doppelmodusverbindungsanordnung zwischen integrierten hochfrequenzschaltungen und einem kunststoffwellenleiter Pending EP4125152A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP21188951.4A EP4125152A1 (de) 2021-07-30 2021-07-30 Doppelmodusverbindungsanordnung zwischen integrierten hochfrequenzschaltungen und einem kunststoffwellenleiter

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EP21188951.4A EP4125152A1 (de) 2021-07-30 2021-07-30 Doppelmodusverbindungsanordnung zwischen integrierten hochfrequenzschaltungen und einem kunststoffwellenleiter

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3340370A1 (de) * 2016-12-23 2018-06-27 TE Connectivity Nederland B.V. Millimeterwellenantenne und verbindungsanordnungen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3340370A1 (de) * 2016-12-23 2018-06-27 TE Connectivity Nederland B.V. Millimeterwellenantenne und verbindungsanordnungen

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DE WIT MAXIME ET AL.: "IEEE Microwave magazine", vol. 21, 1 January 2020, IEEESERVICE CENTER, article "Polymer Microwave Fibres: A New Approach That Blends Wireline, Optical, and Wireless Communication", pages: 51 - 66
ESQUIUS-MOROTE MARC ET AL: "Orthomode Transducer and Dual-Polarized Horn Antenna in Substrate Integrated Technology", IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, IEEE, USA, vol. 62, no. 10, 1 October 2014 (2014-10-01), pages 4935 - 4944, XP011560550, ISSN: 0018-926X, [retrieved on 20141002], DOI: 10.1109/TAP.2014.2341697 *
HEDIN MICHAEL ET AL: "Substrate Integrated E-Plane Waveguide (SIEW) to Design E-Plane and Dual Polarized Devices", IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, IEEE, USA, vol. 67, no. 3, 1 March 2019 (2019-03-01), pages 1844 - 1853, XP011713648, ISSN: 0018-926X, [retrieved on 20190304], DOI: 10.1109/TAP.2018.2885459 *
WANG JINGXUE ET AL: "Two-dimensional multi-beam end-fire antenna array of magneto-electric dipoles with horizontal polarization", 2017 IEEE INTERNATIONAL SYMPOSIUM ON ANTENNAS AND PROPAGATION & USNC/URSI NATIONAL RADIO SCIENCE MEETING, IEEE, 9 July 2017 (2017-07-09), pages 2565 - 2566, XP033230524, DOI: 10.1109/APUSNCURSINRSM.2017.8073325 *

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