Classifications

• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/38—Impedance-matching networks
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
  • H03F1/56—Modifications of input or output impedances, not otherwise provided for
  • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
  • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
  • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
  • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
  • H03H7/1758—Series LC in shunt or branch path
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H7/17—Structural details of sub-circuits of frequency selective networks
  • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
  • H03H7/1766—Parallel LC in series path
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
  • H03H7/468—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source particularly adapted as coupling circuit between transmitters and antennas
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F2200/00—Indexing scheme relating to amplifiers
  • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03F—AMPLIFIERS
  • H03F2200/00—Indexing scheme relating to amplifiers
  • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
• • H—ELECTRICITY
  • H03—ELECTRONIC CIRCUITRY
  • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
  • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
  • H03H7/01—Frequency selective two-port networks
  • H03H2007/013—Notch or bandstop filters

Definitions

• TITLE Integrated circuit comprising an adaptation and filtering network and corresponding adaptation and filtering process.
• Embodiments and implementations relate to integrated circuits comprising a matching and filtering network, typically between an output of a power amplifier and an antenna.
• power amplifiers operate at maximum efficiency when the load on their outputs is at optimum impedance.
• the optimum output impedance of a power amplifier typically differs from the impedance of the antennas connected to it.
• impedance matching circuits are conventionally provided between the output of power amplifiers and the antennas in order to transform the impedances of the antennas to the ideal impedances of the amplifiers.
• Impedance matching circuits are typically realized by passive components such as resistive elements, inductive elements, and capacitive elements. Impedance matching circuits consume a potentially bulky surface area, which can be particularly troublesome when the impedance matching circuit is implemented in a small integrated circuit.
• the emission spectra of power amplifiers typically contain spurious signals, such as harmonic frequencies of the fundamental frequency or noise due to the internal non-linearity of power amplifiers.
• filtering circuits are conventionally provided between the output of the power amplifiers and the antennas in order to filter in particular the frequency bands of harmonics, for example up to the fifth order.
• the filter circuits are typically made by passive components such as resistive elements, inductive elements, and capacitive elements, and themselves also consume a surface which can be bulky, and particularly troublesome when the impedance matching circuit is produced in an integrated fashion.
• Impedance matching and filtering circuits have specific constraints and are conventionally designed separately. Although the techniques separating the two functions (impedance matching and filtering) are satisfactory from a performance standpoint, these techniques require many passive components, which makes them expensive and cumbersome.
• an integrated circuit comprising a power amplifier intended to supply a signal in a fundamental frequency band, an antenna, and an adaptation and filtering network comprising:
• the three sections comprising inductive-capacitive "LC" assemblies configured to present an impedance suitable for the output of the power amplifier in the band of fundamental frequencies.
• the LC assemblies of the first section and the second section are further configured to have resonant frequencies respectively matched to attenuate the harmonic frequency bands of the fundamental frequency band.
• a three section matching and filtering network of LC assemblies in which all the LC assemblies of the first section and of the second section are configured both to match the impedance and to filter the frequencies. harmonics.
• all the LC assemblies of each of the first and second sections are configured for the simultaneous adaptation and filtering functions, unlike the conventional techniques in which one assembly is dedicated to the adaptation and another assembly, at least. partially separate, is dedicated to filtering.
• the third section is dedicated to impedance matching, and in particular is not configured to have a resonant frequency, in order to maintain attenuation in the high frequencies.
• the design according to this aspect proposing a complete fusion of the adaptation and filtering functions in the LC assemblies of the first section and of the second section allows a particularly compact realization of the integrated circuit, without losing performance or increasing costs.
• the LC assemblies of the first section are configured to have resonance frequencies lower than the resonance frequencies of the corresponding LC assemblies of the second section.
• the capacitive elements usually have a larger size on the power amplifier side, in the first section, than on the antenna side, in the second section.
• the resonant frequency of an LC assembly is inversely proportional to the size of the inductive and capacitive elements of the LC assembly. Consequently, this embodiment proposes to position the resonance frequencies in an optimized manner for the sizes of the inductive elements provided for the filtering. The overall size is thus optimized as low as possible.
• the first section comprises a parallel LC circuit coupled between the output node of the power amplifier and the first intermediate node and a series LC circuit coupled between the first intermediate node and a ground node
• the second section has a parallel LC circuit coupled between the first intermediate node and the second intermediate node and a series LC circuit coupled between the second intermediate node and the ground node.
• each LC assembly in series is configured to have an equivalent impedance corresponding to an impedance of a capacitive element suitable for said impedance matching in the fundamental frequency band, and in which the resonant frequencies of each LC series connections are chosen so as to be distributed in different harmonic frequency bands of the fundamental frequency band, and so that the series LC connections having equivalent impedances corresponding to the impedances of the capacitive elements having the most small capacitive values, have the greatest resonance frequencies.
• the resonant frequency of the LC assemblies in series in the first section and in the second section is chosen so as to introduce an inductive element of minimum size in combination with a capacitive element provided for impedance matching.
• the inductive element necessary to make a capacitive element resonate is inversely proportional to the capacitive value and to the square of the resonant frequency
• the largest resonant frequencies are advantageously associated with the smallest capacitive values. , to minimize the value of the inductive element to add.
• This embodiment again proposes to optimize the overall size by positioning the resonance frequencies in an optimized manner for the sizes of the inductive elements allowing the filtering function in each of the first and second sections.
• the resonant frequencies of each LC assembly in parallel are chosen so as to be distributed, with the resonance frequencies of the LC assemblies in series, in different harmonic frequency bands of the fundamental frequency band.
• this embodiment makes it possible to cover filtering on all harmonic frequency bands, by positioning the resonance frequencies in the harmonic frequency bands remaining to be filtered, by combining capacitive elements with inductive elements provided. for impedance matching.
• the positioning of the resonant frequencies with the capacitive value in the LC assemblies in parallel introduces an additional bulk of acceptable magnitude compared to the bulk. equivalent inductive elements provided for impedance matching, and also in relation to the space saving by optimizing the inductive elements in the LC filters in series.
• the LC assemblies of the first section and of the second section are configured according to at least one of the following criteria:
• the parallel LC assembly of the first section is configured to have a resonant frequency in one half of the frequency band of the second harmonics;
• the parallel LC arrangement of the second section is configured to have a resonant frequency in the other half of the second harmonic frequency band
• the series LC assembly of the first section is configured to have a resonant frequency in the third harmonic frequency band;
• the LC circuit in series of the second section is configured to have a resonant frequency either between the frequency band of the fourth harmonics and the frequency band of the fifth harmonics, or in a common portion of the frequency band of the fourth harmonics and of the frequency band of fifth harmonics.
• This embodiment provides possibilities for positioning the resonant frequencies to optimize the overall size, and for optimal performance.
• the positioning of the resonant frequency of the series LC assembly of the first section in the third harmonic frequency band, and not in the upper half of the second harmonic frequency band, will be noted.
• This positioning advantageously makes it possible to avoid possible problems of coupling between the resonant frequency of the LC assembly in parallel with the first section (which is in the frequency band of the second harmonics), with the resonant frequency of the LC assembly in series. of the first section (which is not in the frequency band of the second harmonics).
• the third section comprises an LC assembly comprising an inductive element coupled between the second intermediate node and the input node of the antenna, and a capacitive element coupled between the input node of the antenna and a ground node, the LC assembly of the third section being configured to have a minimum quality factor.
• a method of impedance matching and filtering between an output of a power amplifier supplying a signal in a fundamental frequency band and an antenna comprising a dimensioning of a network of virtual adaptation comprising:
• the method comprises providing an actual matching and filtering network comprising a replacement of each inductive element and each capacitive element of the first section and of the second section of the virtual matching network, by respective inductive-capacitive "LC" arrangements, configured to present an equivalent impedance matched to the output of the power amplifier in the fundamental frequency band, and further to have resonant frequencies respectively adapted to attenuate the harmonic frequency bands of the fundamental frequency band.
• the method according to this aspect proposes a dimensioning of a virtual impedance matching network, not providing for the function filtering, in order to size the requirements for impedance matching.
• the filtering is then introduced into the real adaptation and filtering network, that is to say, as opposed to "virtual", which actually exists for the implementation of the adaptation and the filtering on a signal d 'emission.
• This real matching and filtering network is obtained by replacing the virtual elements with equivalent real elements for the purposes of impedance matching, and having in addition their filtering functions.
• the resonance frequencies of the LC assemblies of the first section of the real matching and filtering network are chosen lower than the resonance frequencies of the corresponding LC assemblies of the second section of the matching network and of actual filtering.
• the first section of the virtual adaptation network comprises an inductive element coupled between the output node of the power amplifier and the first intermediate node and a capacitive element coupled between the first intermediate node and a ground node
• the second section of the virtual matching network comprises an inductive element coupled between the first intermediate node and the second intermediate node and a capacitive element coupled between the second intermediate node and the ground node
• said realization of the real adaptation and filtering network includes a replacement of each inductive element by an assembly LC in parallel, and a replacement of each capacitive element by an LC assembly in series.
• the resonant frequencies are first chosen for each LC assembly in series so as to be distributed in different harmonic frequency bands of the fundamental frequency band, and so that the LC assemblies in series replacing the capacitive elements of the virtual matching network having the smallest capacitive values, have the largest resonance frequencies.
• the resonant frequencies are then chosen for each LC assembly in parallel so as to be distributed, with the resonance frequencies of the LC assemblies in series, in different harmonic frequency bands of the band. fundamental frequencies.
• the realization of the real adaptation and filtering network is made according to at least one of the following criteria:
• the LC assembly in parallel with the first section has a resonant frequency in one half of the frequency band of the second harmonics
• the parallel LC arrangement of the second section has a resonant frequency in the other half of the second harmonic frequency band
• the LC assembly in series of the first section has a resonant frequency in the frequency band of the third harmonics
• the LC assembly in series of the second section has a resonant frequency either between the frequency band of the fourth harmonics and the frequency band of the fifth harmonics, or in a common portion of the frequency band of the fourth harmonics and of the band frequencies of fifth harmonics.
• the realization of the real adaptation and filtering network comprises a reproduction of the third section of the virtual adaptation network comprising an inductive element coupled between the second intermediate node and the node input of the antenna, and a capacitive element coupled between the input node of the antenna and a ground node, the LC assembly of the third section being dimensioned to have a minimum quality factor.
• FIG 5 illustrate embodiments and implementation of the invention.
• Figure 1 illustrates an MFN matching and filtering network between an output node of a PA power amplifier and an input node of an ANT antenna, for example produced integrated in an integrated circuit.
• the power amplifier PA is configured to provide a transmission signal in a fundamental frequency band, in particular radio frequencies suitable for wireless communications, such as, for example, telecommunications of the 4G, 5G or LTE type, Wifi or still bluetooth.
• the MFN matching and filtering network has three matching and filtering sections SCT1, SCT2, SCT3, and a DCFD direct current supply stage.
• the DCFD direct current supply stage has an inductive element in series between a supply voltage terminal VCC and the output node of the power amplifier, and a capacitive element between the supply voltage terminal VCC and a ground reference voltage terminal GND.
• the DCFD direct current power supply stage provides the voltage and current level required for the network adaptation and MFN filtering from the output node of the power amplifier PA.
• the first section SCT1 is located between the output node of the power amplifier PA and a first intermediate node NI
• the second section SCT2 is located between the first intermediate node NI and a second intermediate node N2
• the third section SCT3 is located between the second intermediate node N2 and an input node of the ANT antenna.
• Each of the three sections SCT1, SCT2, SCT3 comprises inductive elements and capacitive elements, that is to say inductive-capacitive assemblies which will be designated for convenience and conventionally "LC" assemblies.
• the LC assemblies of the three sections SCT1, SCT2, SCT3 are configured to present an impedance suitable for the output of the power amplifier PA in the fundamental frequency band.
• the impedance is matched to the output of the power amplifier PA in that at this impedance, the optimum power of the transmission signal is transferred from the power amplifier PA to the antenna ANT, in particular in order to ensure minimum reflection of the transmit signal power.
• the LC assemblies of the first section SCT1 and the second section SCT2 are configured to have resonant frequencies respectively adapted to attenuate the harmonic frequency bands of the fundamental frequency band.
• Harmonic frequencies are integer multiples of the fundamental frequency of the send signal.
• the first section SCT1 comprises a parallel LC circuit 11 coupled between the output node of the power amplifier PA and the first intermediate node NI, as well as a series LC circuit 12 coupled between the first intermediate node NI and a GND ground node.
• the second section SCT2 comprises a parallel LC assembly 21 coupled between the first intermediate node NI and the second intermediate node N2, as well as a serial LC circuit 22 coupled between the second intermediate node N2 and the ground node GND.
• the third section SCT3 comprises an inductive element coupled between the second intermediate node N2 and the input node of the ANT antenna, as well as a capacitive element coupled between the input node of the ANT antenna and the GND ground.
• the LC assembly of the third section is configured to have a minimum quality factor, that is to say that it is not intended to ensure a filtering function on a resonant frequency, but nevertheless makes it possible to maintain a attenuation in high and very high frequencies.
• the LC setup in the third section is dedicated to impedance matching.
• a DC coupling capacitor is provided in a conventional manner between the input node of the antenna ANT and the antenna, in order to block the DC component of the voltage, and its capacitive value is chosen sufficiently large to have negligible impact on impedance matching.
• the parallel LC assemblies 11, 21, will block the transmission of the signals at their resonance frequencies along the series path going from the output of the power amplifier PA to the antenna ANT, by means of the intermediate nodes NI, N2.
• the series LC assemblies 12, 22, will evacuate to the GND ground (usually "shunt” in English) the signals at their resonance frequencies flowing from the output of the power amplifier PA to the antenna ANT, by the intermediary of the intermediate nodes NI, N2.
• each LC assembly in parallel 11, 21 is configured in a dual manner so as on the one hand to have an equivalent impedance corresponding to an impedance of an inductive element intended for said impedance adaptation in the frequency band.
• fundamental (FIG. 2)
• a resonant frequency fi l, f21 (FIG. 5) chosen from one of the harmonic frequency bands (FIG. 5).
• each LC assembly in series 12, 22 is advantageously configured in a dual manner so as, on the one hand, to have an equivalent impedance corresponding to an impedance of a capacitive element suitable for said impedance adaptation in the fundamental frequency band ( figure 2), and to have a resonant frequency f2, f22 (figure 5) chosen from one of the harmonic frequency bands (figure 5) to minimize the inductive value of the LC assembly in series at this equivalent impedance.
• each LC assembly 11, 12, 21, 22 of the first section SCT1 and of the second section SCT2 are in their entirety configured simultaneously for the adaptation and filtering functions. That is to say that there is no component in the LC assemblies of the first section SCT1 and of the second section SCT2 which are only dedicated to the impedance matching function or that to the filter function.
• FIG. 2 illustrates a virtual adaptation network MNO which will serve as a reference base for dimensioning the inductive and capacitive elements of the adaptation and filtering network MFN described in relation to FIG. 1.
• the MNO adaptation network is qualified as "virtual" because this network has only a computational vocation to size the needs for the impedance adaptation.
• the results of the dimensioning will be used as a basis of calculation to evaluate the components actually carried out to implement the adaptation and the filtering by the MFN network described in relation to FIG. 1.
• the virtual adaptation network MNO comprises three sections of virtual adaptation SCT01, SCT02, SCT03, and a DCFD DC power supply stage.
• the three virtual sections SCT01, SCT02, SCT03 are similar to the structure of the third section SCT3, i.e. that they each comprise an inductive element on the serial channel going from the output node of the power amplifier PA to the input node of the antenna ANT, via the intermediate nodes NI, N2, as well as an element capacitive coupled to the GND ground, in "shunt", and on the intermediate nodes NI, N2 and the antenna input node ANT.
• the virtual adaptation network MNO thus corresponds to a low-pass network with minimum quality factor in three sections SCT01, SCT02, SCT03, designed to adapt the impedance between the output of the power amplifier PA and the antenna ANT . Reference is made to FIG. 3.
• Figure 3 shows a Smith chart normalized by the impedance of the ANT antenna, so that the impedance of the RANT antenna is located in the center of the Smith chart.
• the sizing is done in such a way as to transform the impedance of the RANT antenna to the ideal impedance of the RPA power amplifier.
• intermediate impedances RI, R2 are calculated by geometric mean between the impedance of the antenna RANT and the ideal impedance RPA presented on the output node of the power amplifier PA.
• RPA being the inverse of the real part of the admittance presented at the output node of the power amplifier PA
• RANT being the inverse of the real part of the admittance presented by the ANT antenna.
• the intermediate impedances RI, R2 correspond to the impedances (strictly speaking the reverse of the real parts of the admittances) which will be presented on the intermediate nodes NI, N2 of the virtual adaptation network MNO.
• the values of the capacitive elements Co and the inductive elements Lo are derived for each section SCT01, SCT02, SCT03 (or SCTk - figure 4) by reading the Smith chart, and by the equations EQ1 and EQ2 defined in relation to figure 4.
• R L the impedance (strictly speaking the inverse of the real part of the admittance) presented to the left of each section SCTk (k ⁇ o [01; 02; 03]) and R G the impedance (strictly speaking the reverse of the real part of the admittance) presented to the right of each SCTk section, as illustrated in FIG. 4.
• the imaginary part of the admittance of the load on the output node of the power amplifier PA is made by the inductive element of the DC power supply stage DCFD, through which the power amplifier PA is supplied.
• the method then comprises an embodiment of the real adaptation and filtering network MFN, as described previously in relation to FIG. 1, from the inductive Lo and capacitive elements Co thus dimensioned in each section SCT01, SCT02, SCT03 of the network d virtual adaptation MN0.
• the realization of the real adaptation and filtering network MFN comprises a replacement of each inductive element and of each capacitive element of the first section SCT01 and of the second section SCT02 of the network d virtual adaptation MN0, by respective resonant “LC” inductive-capacitive assemblies.
• the inductive-capacitive "LC” arrangements are configured to present an impedance equivalent to the matched impedance of the virtual matching network MN0 in the fundamental frequency band, and further to have resonant frequencies respectively matched to attenuate the bands of harmonic frequencies of the fundamental frequency band.
• the inductive elements Lo of the virtual adaptation network MN0 are replaced by parallel LC assemblies 11, 12, having the same impedance at a frequency fo chosen within the fundamental frequency band, and a respective resonant frequency f r.
• the capacitive elements Co of the virtual matching network MN0 are replaced by series LC assemblies 12, 22, having the same impedance at a frequency fo chosen within the fundamental frequency band, and a resonance at a respective resonant frequency f r.
• the resonance frequencies f r are chosen so as to attenuate the harmonic frequency bands of the fundamental frequency band.
• FIG. 5 represents the results of the adaptation and filtering network MFN as described in relation to FIG. 1 and obtained as described in relation to FIGS. 2 to 4, with a positioning of the resonant frequencies (f r ) fi l, fl2, f21, f22 advantageous.
• Graph 51 represents the gain in transmission of the adaptation and filtering network MFN
• graph 52 represents the gain in transmission of the MFN network in the fundamental frequency band FB
• graph 53 represents the real part of the impedance of the network MFN in the fundamental frequency band FB
• graph 54 represents the imaginary part of the impedance of the MFN network in the fundamental frequency band FB.
• the resonant frequency of the LC assembly in parallel 1 1 of the first section SCT1 is denoted fi l
• the resonant frequency of the LC assembly in series 12 of the first section SCT1 is denoted by fl2
• the resonant frequency of the LC assembly in parallel 21 of the second section SCT2 is denoted f21
• the resonant frequency of the series LC assembly 22 of the second section SCT2 is denoted f22 (with reference to FIG. 1).
• the different resonance frequencies will be designated directly by their respective references.
• the resonant frequency fi l is positioned in one half, for example the lower half, of the frequency band of the second harmonics HB2.
• the resonant frequency fl2 is positioned in the frequency band of the third harmonics HB3.
• the resonant frequency f21 is positioned in the other half, for example the upper half, of the second harmonic frequency band HB2.
• the resonant frequency f22 is positioned between the frequency band of the fourth harmonics HB4 and the frequency band of the fifth harmonics HB5, that is to say, in the event of overlap of the frequency bands of the fourth harmonics HB4 and the fifth harmonics HB5, in the common portion of said HB4 and HB5 bands.
• this example corresponds to an optimization in terms of size of the realization of the adaptation and filtering network MFN.
• the inductive elements have a size and a much larger footprint than the capacitive elements in this type of embodiment; that the capacitive elements Co coupled to ground in the virtual adaptation network MNO have lower values near the antenna ANT and higher near the power amplifier PA; and that the value of the inductive element required to make a capacitive element resonate is inversely proportional to the capacitive value and to the square of the resonant frequency; it is the inductive elements added to resonate the capacitive elements coupled to the ground that should be minimized.
• the set of two inductive elements of the series LC assemblies 12, 22 of the two sections SCT1, SCT2 has a minimal overall size, while having resonance frequencies respectively distributed in a suitable manner to attenuate several bands of harmonic frequencies.
• SCT3 are not replaced by a resonant LC assembly, in order to maintain a certain level of attenuation at high frequencies.
• the resonant frequencies f22, fl2 are first chosen for each LC series assembly so as to be distributed in different harmonic frequency bands of the fundamental frequency band, and so that the series LC connections replacing the capacitive elements of the virtual matching network having the smallest capacitive values, have the largest resonance frequencies. Then, the resonance frequencies are chosen for each LC assembly in parallel 11, 21 so as to be distributed, with the resonance frequencies of the LC assemblies in series 12, 22, in different frequency bands of harmonics of the frequency band fundamental.
• Graph 52 shows that the maximum loss in the fundamental band FB is of the order of 1.6dB.
• Graphs 53 and 54 show that the real part of the impedance is contained at approximately 10% around for example 4.5 ohms, and that the imaginary part is also well contained at approximately 15 pF (pico farads).
• the matching is performed by a three-section low-pass filter with minimum quality factor to provide the impedance transformation of the real part.
• the imaginary part of the optimum impedance of the power amplifier is achieved by the inductive element of the DC power supply stage.
• a capacitive coupling element is added before the antenna to block the direct voltage. Its value is chosen large enough to have little impact on the transformation of the impedance.
• the rejection and (filtering) of the harmonics is ensured by the replacement of the inductive elements in series by LC connections in parallel, and by the replacement of the “shunt” capacitor by LC connections in series.
• the equivalent reactance of the LC assemblies is kept equal to the reactance of the element which they replace respectively, in the fundamental frequency band.
• the first LC parallel assembly blocks the lower part of the second harmonic band
• the first LC "shunt" series circuit on the output side of the power amplifier, removes frequencies in the third harmonic band
• the second LC assembly in "shunt" series, evacuates the frequencies in the bands of the fourth and fifth harmonics.
• the inductive element and the capacitive element of the last section, on the antenna side, are not replaced by a resonant circuit in order to provide attenuation for higher order harmonics, i.e. say greater than five.

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• 2021
  • 2021-02-15 WO PCT/EP2021/053672 patent/WO2021165210A1/fr unknown
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  • 2021-02-15 EP EP21704567.3A patent/EP4107857A1/de active Pending
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  • 2021-02-15 US US17/800,277 patent/US20230129447A1/en active Pending

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