EP4104267A1

EP4104267A1 - Method and apparatus for protection of an electrical load against overvoltage

Info

Publication number: EP4104267A1
Application number: EP21746056.7A
Authority: EP
Inventors: Philipp Steinberger; Peter Spiel; Bernhard Först
Original assignee: Future Systems Besitz GmbH
Current assignee: Future Systems Besitz GmbH
Priority date: 2020-07-23
Filing date: 2021-07-22
Publication date: 2022-12-21
Also published as: EP3944438A1; WO2022018234A1; CN114982085A

Abstract

A protection apparatus (1) for protection of an electrical load (9), said protection apparatus (1) comprising: at least one input terminal (2) adapted to receive a power supply voltage; at least one semiconductor power switch (5) connected in series to the associated input terminal (2) in a power supply path (10) through which the electrical load (9) connected to an output terminal (3) of said power supply path (10) receives an electrical load current, IL; said protection apparatus (1) further comprising: a control unit (8) having a microprocessor (8A) adapted to control a driver circuit (6) of said protection apparatus (1) to switch the at least one semiconductor power switch (5) provided in the power supply path (10) on or off in response to a received switch command (CMD), said protection apparatus (1) further comprising: at least one overvoltage detection circuit, ODC, (12) connected to an associated power supply path (10) of said protection apparatus (1) and adapted to detect an overvoltage state at the respective power supply path (10) of said protection apparatus (1) and to control the driver circuit (6) directly through control lines (12, 20) connected to a driver input (IN) at a low voltage side (6A) of the driver circuit (6) to switch off the at least one semiconductor power switch (5) provided within the associated power supply path (10) if an overvoltage state has been detected by the overvoltage detection circuit, ODC, (12) to provide protection of the connected electrical load (9) against overvoltage.

Description

METHOD AND APPARATUS FOR PROTECTION OF AN ELECTRICAL LOAD

AGAINST OVERVOLTAGE

The invention relates to a method and apparatus for protect ing an electrical load connected to an output terminal of a protection apparatus against overvoltage.

When an electrical voltage in a circuit or part of a load de vice is raised above an upper design limit, this is also known as overvoltage. There can be many different situations and conditions where an overvoltage may occur. Depending on its duration, an overvoltage event can be transient, i.e. an occurrence of a voltage spike, or permanent leading to a pow er surge. For example, lightning strikes can lead to over voltages in the power supply network, which in turn cause the electrical loads connected to the power supply network to be damaged. Further, voltage spikes can be caused by electromag netic induction when switching on or off inductive loads such as electrical motors or by switching heavy resistive AC loads. Due to a possible occurrence of transient overvoltages including voltage spikes, there is a need to switch off a connected load as fast as possible to avoid any damage of its internal circuitry.

Accordingly, it is an object of the present invention to pro vide a protection apparatus for protection of an electrical load against overvoltage to switch off a connected load with in a minimal switch-off period.

This object is achieved according to a first aspect of the present invention by a protection apparatus comprising the features of claim 1. The invention provides according to a first aspect a protec tion apparatus for protection of an electrical load against overvoltage, said protection apparatus comprising: at least one input terminal adapted to receive a power supply voltage, at least one semiconductor power switch connected in series to the associated input terminal in a power supply path through which the electrical load connected to an output terminal of the power supply path receives an electrical load current, wherein said protection apparatus further comprises a control unit, CU, having a microprocessor adapted to con trol a driver circuit of said protection apparatus to switch the at least one power switch provided in the power supply path either on or off in response to a received switch com mand, wherein the protection apparatus further comprises at least one overvoltage detection circuit, ODC, connected to an associated power supply path of said protection apparatus and adapted to detect an overvoltage state at the respective power supply path of the protection apparatus and to control the driver circuit directly through control lines connected to a driver input at a low voltage side of the driver circuit to switch off the at least one semiconductor power switch provided within the associated power supply path within a short switch-off period if an overvoltage state has been de tected by said overvoltage detection circuit, ODC, to provide protection of the connected electrical load against overvolt age, wherein the short switch-off period is predefined by control signal propagation delays along the control lines and by propagation delays along the internal circuitry of the driver circuit. In a preferred embodiment, the protection apparatus according to the first aspect of the present invention is able to switch off the at least one semiconductor power switch within the power supply path in a switch-off period of less than 1 msec. This is possible because the propagation delay of the internal circuitry of the driver circuit is less than 200 nsec.

In a preferred embodiment, the overvoltage detection circuit comprises a fast analog control path with minimum propagation delays such that a switch-off period of less than 1 psec is achieved for detected overvoltage transients in the power supply path. The sensitivity of the overvoltage detection circuit with respect to transients or permanent overvoltages can be adjusted in a possible embodiment by means of configu rable threshold values.

In a possible embodiment of the protection apparatus accord ing to the first aspect of the present invention, the control unit is connected to a user interface to receive a switch command.

The control unit of the protection apparatus having a micro controller can switch the at least one semiconductor power switch in the power supply path either on or off in response to the received switch command by controlling the integrated driver circuit of the protection apparatus.

In an alternative embodiment of the protection apparatus ac cording to the first aspect of the present invention, the control unit of the protection apparatus is connected to a system level controller of an automation system to receive a switch command. In this embodiment, the switching off of the at least one semiconductor power switch within the power sup ply path is performed under the control of the control unit, CU, in response to the switch command, CMD, received from the system level controller. The control unit, CU, can receive the switch command, CMD, from the system level controller in a possible implementation via a control interface.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the protection apparatus comprises three parallel power supply paths each connecting an input terminal with an associated output terminal. The at least one semiconductor power switch provided in each of the three power supply paths comprises in a possible embodiment an IGBT or a power MOSFET having a blocking voltage which exceeds the normal operation voltage of the power supply voltage applied to the input terminal of the power supply path of the protection apparatus.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, a control gate of the at least one semiconductor power switch is connected directly to a driver output of the driver cir cuit.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the protection apparatus comprising several power supply paths comprises a corresponding number of associated overvoltage detection circuits, ODCs, wherein each associated overvoltage detection circuit can be connected either to the input termi nal and/or to the output terminal of the respective power supply path. In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, each overvoltage detection circuit, ODC, connected to the input terminal or to the output terminal of the associated power supply path comprises a rectifier, in particular a bridge rectifier, adapted to rectify the electrical voltage at the respective terminal of the associated power supply path, and an analog-to-digital converter, ADC, adapted to convert a low-pass filtered signal into a digital signal applied to a digital comparator implemented in the microprocessor of the control unit, CU, of said protection apparatus and being adapted to compare the low-pass filtered signal output by the analog-to-digital converter, ADC, with a first adjustable digital threshold value to detect a low-frequency drift of the electrical voltage at the respective terminal of the as sociated power supply path and is further adapted to generate a high logic signal if a low-frequency drift is detected.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, each overvoltage detection circuit, ODC, further comprises a fast analog comparator, in particular a Schmitt trigger circuit, adapted to compare the rectified voltage output by the recti fier with a threshold set point to detect overvoltage transi ents in the electrical voltage of the respective terminal of the associated power supply path and is further adapted to generate a logic enable signal to enable a switch-off of the at least one semiconductor power switch provided in the asso ciated power supply path by the driver circuit if an over voltage transient has been detected by the analog comparator of the overvoltage detection circuit, ODC. In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the logical signal generated by the digital comparator implement ed in the microprocessor of the control unit, CU, and the logic enable signal generated by the analog comparator of the overvoltage detection circuit, ODC, are logically combined by an AND gate of the overvoltage detection circuit, ODC, to provide a logical voltage state signal indicating a detected momentary voltage state of the respective terminal of the as sociated power supply path, wherein the logical voltage state signal is applied to the driver input at the low voltage side of the driver circuit.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, an analog high-pass filter, HPF, is provided between the recti fier and the analog comparator and adapted to perform a high- pass filtering of the rectified voltage output by the recti fier.

In a still further possible embodiment of the protection ap paratus according to the first aspect of the present inven tion, an analog low-pass filter, LPF, adapted to perform low- pass filtering of the rectified voltage output by the recti fier is provided between the rectifier and the analog-to- digital converter, ADC.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the rectifier of the overvoltage detection circuit, ODC, is con nected via a potential separation circuit to the associated power supply path. In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the driver circuit is adapted to supply a supervision signal to the microprocessor of the control unit, CU, adapted to inform the microprocessor about a current operation state of the driver circuit and/or about a current switching state of the at least one power switch within the associated power supply path.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the threshold set point of the analog comparator of the overvolt age detection circuit, ODC, is set by the microprocessor of the control unit via a digital-to-analog converter, DAC, wherein the threshold set point comprises in a first opera tion mode of the protection apparatus a fixed threshold com prising in a second operation mode of the protection appa ratus a moving threshold.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the protection apparatus further comprises a load current sensor component connected in series with the at least one semicon ductor power switch in the power supply path, wherein the load current sensor component is adapted to measure continu ously the load current, I_I, flowing through the at least one semiconductor power switch in the power supply path to the connected electrical load, wherein the measured load current, I_I, is notified by the load current sensor component to the microprocessor of the control unit, CU, to determine a momen tary load state of the electrical load connected to the out put terminal of the respective power supply path. In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the protection apparatus further comprises a current rise speed sensor component, in particular a coil, connected in series with the at least one semiconductor power switch and the load current sensor component and adapted to generate a voltage drop corresponding to the current rise speed of the load cur rent, I_I, flowing from the input terminal via the current rise speed sensor component and the at least one semiconduc tor power switch and the load current sensor component along the power supply path to the respective output terminal of the power supply path, wherein the driver circuit of the protection apparatus is adapted to detect an occurring overcurrent depending on the voltage drop generated by the current rise speed sensor com ponent and a voltage drop along the at least one semiconduc tor power switch applied directly as a sum voltage to a driv er input at the high voltage side of the driver circuit and to switch off said at least one semiconductor power switch automatically upon detection of an overcurrent within a switch-off period of less than 1 msec to provide protection against overcurrent, wherein the switch-off period of less than 1 msec is defined by signal propagation delays along a control path including a connection circuitry which connects the current rise speed sensor component with the driver input at the high voltage side of the driver circuit and an inter nal circuitry within the high voltage side of the driver cir cuit.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the protection apparatus comprises a first overvoltage detection circuit, ODC1, which is con nected to the input terminal of the associated power supply path and is adapted to determine a momentary voltage state at the input terminal and further comprises a second overvoltage detection circuit, ODC2, connected to the output terminal of the associated power supply path and adapted to determine a momentary voltage state at the output terminal.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the momentary voltage state at the input terminal determined by the first overvoltage detection circuit, ODC1, and the momen tary voltage state at the output terminal determined by the second overvoltage detection circuit, ODC2, are processed to determine a momentary overall voltage state at both terminals of the associated power supply path which is logically com bined by a logic gate to trigger the driver circuit of the protection apparatus to switch off the at least one semicon ductor power switch of the associated power supply path auto matically if an overall overvoltage state at both terminals of the associated power supply path has been detected.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the current rise speed sensor component, the at least one semi conductor power switch and the load current sensor component are connected in series along the power supply path and form a secondary current path provided between the input terminal and the output terminal of the protection apparatus, wherein a primary current path including a controllable mechanical switch is provided between the input terminal and the output terminal connected in parallel to the secondary current path. The invention further provides according to a further aspect a method for providing protection of an electrical load against overvoltage having the features of claim 19.

The invention provides according to the second aspect a meth od for providing protection of an electrical load against overvoltage, wherein the method comprises the steps of: detecting an overvoltage at a power supply path including at least one semiconductor power switch, wherein the power sup ply path supplies the load current to a connected electrical load; applying a control signal along a control path to a driver input of a driver circuit to trigger a switch-off of the at least one semiconductor power switch of the power supply path within a short switch-off period defined by control signal propagation delays along a control path and by propagation delays along an internal circuitry of the driver circuit.

In the following, possible embodiment of the different as pects of the present invention are described in more detail with reference to the enclosed figures.

Fig. 1 shows a block diagram for illustrating a pos sible exemplary embodiment of a protection apparatus according to the first aspect of the present invention;

Fig. 2 shows a further block diagram for illustrat ing a further possible exemplary embodiment of a protection apparatus according to the first aspect of the present invention; Fig. 3 shows a further block diagram for illustrat ing a possible exemplary embodiment of a pro tection apparatus according to the first as pect of the present invention;

Fig. 4 shows a circuit diagram for illustrating a possible exemplary embodiment of a protection apparatus according to the first aspect of the present invention;

Fig. 5 shows a further block diagram for illustrat ing a possible exemplary embodiment of a pro tection apparatus according to the first as pect of the present invention;

Figs. 6A to 6D illustrate possible implementations of power supply paths within a protection apparatus according to the first aspect of the present invention;

Fig. 7 shows a flowchart for illustrating a possible exemplary embodiment of a method for provid ing protection of an electrical load against overvoltage according to a further aspect of the present invention,;

Fig. 8 shows a circuit diagram of an internal cir cuitry of possible implementations of a driv er circuit of a protection apparatus accord ing to the present invention; Fig. 9 shows a connection circuitry at a high volt age side of the driver circuit in the embodi ment of Fig. 2 in more detail;

Figs. 10, 11 show signal diagrams to illustrate the opera tion of a protection apparatus.

As can be seen from the block diagram of Fig. 1, a protection apparatus 1 is provided for protection of an electrical load 9 connected to an output terminal 3 of the protection appa ratus 1. The protection apparatus 1 comprises at least one input terminal 2 adapted to receive power supply voltage UI_N. This power supply voltage can comprise an AC power supply voltage U_AC from a power supply network PSN. The protection apparatus 1 further comprises at least one output terminal 3 as illustrated in Fig. 1. The input terminal 2 and the output terminal 3 are connected to each other via a power supply path 10 as shown in Fig. 1 comprising at least one semicon ductor power switch 5. The at least one semiconductor power switch 5 can be connected in series with further components as also illustrated in Fig. 2. The load 9 receives a load current I_I from the output terminal 3 of the power supply path 10. The power supply voltage UI_N applied to the input terminal 2 can comprise in a possible embodiment also a DC supply voltage.

The protection apparatus 1 further comprises a control unit 8 comprising a processor 8A adapted to control a driver circuit 6 of the protection apparatus 1 to switch the at least one semiconductor power switch 5 provided within the power supply path 10 either on or off in response to a received switch command CMD. The switch command CMD can be received by the protection apparatus 1 in a possible implementation from an entity 11 which may comprise a user interface or a remote system level controller. In response to the received command CMD, the microprocessor 8A of the control unit 8 can trigger an automatic switch-on or an automatic switch-off of the at least one semiconductor power switch 5 within the power sup ply path 10 via the associated driver circuit 6.

The protection apparatus 1 according to the first aspect of the present invention comprises in the illustrated embodiment at least one overvoltage detection circuit (ODC) 12 connected to the associated power supply path 10 as shown in Fig. 1.

The overvoltage detection circuit 12 is adapted to detect an overvoltage state at the associated power supply path 10 and can control the driver circuit 6 directly through a control line 13 which is connected via an AND gate 14 to a driver in put IN at the low voltage side 6A of the driver circuit 6.

The overvoltage detection circuit 12 can supply via the con trol line 13 an enable control signal applied to an input of the AND gate 14. This is also illustrated in more detail in Fig. 3. The overvoltage detection circuit 12 can control the driver circuit 6 directly through the control line 13 to trigger a switch-off of the semiconductor power switch 5 by the driver circuit 6 if an overvoltage state has been detect ed by the overvoltage detection circuit 12 to provide protec tion of the load 9 against overvoltage. In the illustrated embodiment of Fig. 1, the overvoltage detection circuit 12 is connected at a node 15 to the power supply path 10 to detect an overvoltage state at the input side of the power supply path 10. In an alternative embodiment, the overvoltage detec tion circuit 12 can also be connected to the output side of the power supply path 10, i.e. to a node connected to the output terminal 3 of the protection apparatus 1 to detect an overvoltage state at the output side of the protection appa- ratus 1. The overvoltage detection circuit 12 as shown in Fig. 1 is further connected via signal lines 16 to an analog- to-digital converter (ADC) 17 connected at its output side to an input of a control unit 8 as shown in Fig. 1. A first out put of the overvoltage detection circuit (ODC) 12 connected via the signal line 13 to the AND gate 14 indicates detected high-frequency transients TR within the signal along the pow er supply path 10 as also illustrated in Fig. 10A. Another output of the overvoltage detection circuit 12 provides in formation about slow voltage drifts (illustrated in Fig. 10B) within the signal applied via the power supply path 10 to the output terminal 3 of the protection apparatus 1. The over voltage detection circuit 12 and the AND gate 14 and the driver circuit 6 as well as the analog-to-digital converter 17 and the control unit 8 form together a control path 18 as sociated with the power supply path 10 as shown in Fig. 1.

The overvoltage detection circuit 12 connected with the asso ciated power supply path 10 is adapted to detect an overvolt age at the respective power supply path 10 and to control the driver circuit 6 directly through a control line 20 between the AND gate 14 to the driver input IN at a low voltage side 6A of the driver circuit 6 to trigger a switch-off of the at least one semiconductor power switch 5 provided within the associated power supply path 10 if an overvoltage state has been detected by the overvoltage detection circuit 12 to pro vide protection for the load 9 against occurring overvoltag es.

The at least one semiconductor power switch 5 provided in the power supply path 10 can comprise in a possible embodiment a power MOSFET, in particular N-MOSFET. In an alternative em bodiment, the semiconductor power switch 5 can also comprise an IGBT. The at least one semiconductor power switch 5 has a blocking voltage which exceeds the normal operation voltage of the received AC power supply voltage U_AC applied to the input terminal 2 of the protection apparatus 1. A control gate 21 of the at least one semiconductor power switch 5 is connected directly to a driver output OUT of the driver cir cuit 6 at the high voltage side 6B of the driver circuit 6. The driver circuit 6 is adapted to switch off the at least one semiconductor power switch 5 via a control line 19 in a preferred embodiment within a switch-off period of less than 1 msec defined by the signal propagation delays along the first control line 13, the control line 20 between the output of the AND gate 14 and the driver input IN as well as propa gation delays of the signal along the internal circuitry of the driver circuit 6. The signal propagation delay within the internal circuitry of the driver circuit 6 between the driver input IN and the driver output OUT is in a possible embodi ment less than 200 nsec. Depending on the implementation of the overvoltage detection circuit 12, a very short switch-off period can be achieved. The switch-off period can be as low as 1 psec in a possible implementation. In any case, a short switch-off period of less than 1 msec is provided as defined by the propagation delays along the control lines starting from the node 15 and ending at the control gate 21 of the power switch 5 as shown in Fig. 1. Accordingly, the signal propagation delays between node 15 at the control gate 21 of the at least one semiconductor power switch 5 within the pow er supply path 10 define the switch-off period to switch off the semiconductor power switch 5 in response to an occurring overvoltage. Since the propagation delay along the driver circuit 6 is very low and comprises less than 200 nsec, a very short switch-off period of 1 psec can be achieved in a possible implementation. Even when using relatively slow cir- cuitry in the overvoltage detection circuit 12, still a very low switch-off period of less than 1 msec can be achieved us ing the driver circuit 6. In a possible implementation, a driver circuit 1 ED020/12-B2 manufactured by Infineon Tech nologies can be used. This driver circuit comprises two sepa rated circuit halves which are galvanically separated from each other by transformers Tl, T2, as also illustrated in Fig. 4. The driver circuit 6 comprises a low voltage side 6A and a high voltage side 6B. The driver input IN provided at the low voltage side receives signals from the overvoltage detection circuit 12 and from the control unit 8 via the AND gate 14. The driver output OUT of the driver circuit 6 pro vided at the high voltage side 6B connects the driver circuit 6 directly to the control input 21 of the controllable power switch 5.

In the illustrated embodiment of Fig. 1, the logical signal generated by a digital comparator COMP1 implemented in the microprocessor 8A of the control unit 8 and a logic enable signal generated by an analog comparator COMP2 of the over voltage detection circuit 12 are logically combined by the AND gate 14 to provide a logical voltage state signal indi cating a detected momentary voltage state at the power supply path 10. The logical voltage state signal is applied by the control line 20 to the driver input IN at the low voltage side 6A of the driver circuit 6. In a possible embodiment, the driver circuit 6 is further adapted to supply a supervi sion signal to the microprocessor 8A of the control unit 8 adapted to inform the microprocessor 8A about a current oper ation state of the driver circuit 6 itself and/or about a current switching state of the at least one power switch 5 provided within the power supply path 10. In the illustrated implementation of Fig. 1, the driver circuit 6 provides the supervision signal to the microprocessor 8A of the control unit 8 via a signal line 22.

Fig. 2 shows a block diagram of a further possible embodiment of a protection apparatus 1 according to the present inven tion. In the illustrated embodiment of Fig. 2, the power sup ply path 10 between the input terminal 2 and the output ter minal 3 comprises additional components, in particular a cur rent rise speed sensor component 4 and a load current sensor component 7. The current rise speed sensor component 4 can be formed by a coil. The load current sensor component 7 is con nected in series with the at least one power switch 5 of the power supply path 10 as shown in Fig. 2. The load current sensor component 7 is adapted to measure continuously the load current I_I flowing through the at least one semiconduc tor power switch 5 in the power supply path 10 of the elec trical load 9 connected to the output terminal 3. The meas ured load current I_I is notified by the load current sensor component 7 to the microprocessor 8A of the control unit 8 via a signal line 23 as shown in Fig. 2. The microprocessor 8A of the control unit 8 is adapted to determine a momentary load state of the electrical load 9 connected to the output terminal 3 of the power supply path 10 on the basis of the measured load current I_I received via the signal line 23. The current measurement unit 7 can be implemented by a Hall sen sor. In a further alternative embodiment, the load current sensor component 7 can also comprise a GMR sensor. In a still further alternative embodiment, the load current sensor com ponent 7 can also be formed by a transformer connected via an analog-to-digital converter to an input of the control unit 8. Accordingly, the load current sensor component 7 of the protection apparatus 1 can comprise a Hall sensor, a GMR sen sor, a shunt resistor or a transformer adapted to measure continuously the load current I_I flowing to the output termi nal 3 of the power supply path 10 notified to the control unit 8. The continuously measured load current I_I can provide a load current profile which can be stored in a possible im plementation in a data memory of the control unit 8.

The power supply path 10 can comprise in a possible implemen tation further components such as a relay which may be con trolled directly by the microprocessor 8A of the control unit 8. Such a mechanical switch provided in the power supply path 10 can provide additional security in case that a switch-off of the semiconductor power switch 5 fails. In a possible em bodiment, an electromechanical relay can be connected in se ries with the at least one semiconductor power switch 5 to interrupt the current flow if an overload state of the elec trical load 9 has been determined by the microprocessor 8A of the control unit 8. The load current I_I measured by the load current sensor component 7 can in a possible embodiment be converted by an analog-to-digital converter into digital measurement values stored in the data memory of the control unit 8.

As can be seen in Fig. 2, a current rise speed sensor compo nent 4 which can be formed by a coil is connected in series with the at least one semiconductor power switch 5 and the load current sensor component 7 within the power supply path 10. The current rise speed sensor component 4 is adapted to generate a voltage drop AU₄ corresponding to the current rise speed of the load current I_I flowing through the power supply path 10. Further, there is a voltage drop AUs along the semi conductor power switch 5 as shown in Fig. 2, e.g. the Drain- Source-Voltage UD_S along a MOSFET 5. The generated voltage drop AU₄ and the voltage drop AUs along the semiconductor power switch 5 are applied directly as a sum voltage U_å to a driver input DESAT at a high voltage side 6B of the driver circuit 6 as shown in Fig. 2. The applied sum voltage ¾ can trigger an automatic switch-off of the at least one semicon ductor power switch 5 upon detection of an overcurrent flow ing through the power supply path 10 within a switch-off pe riod of less than one 1 msec to provide also protection against overcurrent. Accordingly, the protection apparatus 1 as illustrated in the embodiment of Fig. 2 is provided to provide protection against overvoltage and also against over current. The switch-off period of less than 1 msec to provide protection against overcurrent is defined by the signal prop agation delays along another control loop including a connec tion circuitry which connects the current rise speed sensor component 4 along the signal lines 24A, 24B with the driver input DESAT at the high voltage side 6B of the driver circuit 6 and an internal circuitry at the high voltage side 6B of the driver circuit 6. The signal propagation delays caused by the internal circuitry in the high voltage side 6B are even lower than the propagation delays from the driver input IN at the low voltage side 6A to the driver output OUT at the high voltage side 6B. Accordingly, the signal propagation delay caused by the internal circuitry at the high voltage side 6B between the DESAT input and the driver output OUT is less than 200 nsec. The sum voltage ¾ corresponds to the voltage drop between nodes 25A, 25B within the power supply path 10 as shown in Fig. 2 connected via signal lines 24A, 24B to in puts at the high voltage side 6B of the driver circuit 6.

Fig. 3 shows a further block diagram for illustrating a pos sible embodiment of the protection apparatus 1 according to the first aspect of the present invention. Fig. 3 shows a possible exemplary implementation of the overvoltage detec- tion circuit (ODC) 12 within the protection apparatus 1 in more detail. The overvoltage detection circuit 12 is associ ated with the power supply path 10 and is adapted to detect an overvoltage within the power supply path 10. In the illus trated embodiment of Fig. 3, the overvoltage detection cir cuit 12 is connected at its input side at a node 15 with the power supply path 10. The overvoltage detection circuit 12 comprises in the illustrated embodiment a potential separa tion circuit 26 adapted to provide potential separation be tween the power supply path 10 and the other circuitry of the overvoltage detection circuit 12. The potential separation circuit 26 provides a potential separation between a high voltage side, i.e. the power supply path 10, and a low volt age side comprising the circuitry of the overvoltage detec tion circuit 12. At the high voltage side, there can be high voltages of more than 400 Volts (up to 1500 Volts) depending on the use case. At the low voltage side, a typical supply voltage for the control circuitry varies between 5 to 24 Volt DC. The overvoltage detection circuit 12 comprises a rectifi er 27 adapted to rectify the electrical voltage received via the potential separation circuit 26. The rectifier 27 can comprise for instance a bridge rectifier as also illustrated in Fig. 4. In the illustrated embodiment of Fig. 3, the over voltage detection circuit 12 comprises an analog high-pass filter (HPF) 28 adapted to perform a high-pass filtering of the rectified voltage output by the rectifier 27. The high- pass filter 28 is connected via the signal line 29 to the output of the rectifier 27 as shown in Fig. 3. In the illus trated embodiment of Fig. 3, the overvoltage detection cir cuit 12 can further comprise a low-pass filter (LPF) 30 con nected to the output of the rectifier 27 via signal line 31. The low-pass filter 30 is adapted to perform low-pass filter ing of the rectified voltage output by the rectifier 27. The output of the low-pass filter 30 is connected via a signal line 32 to the analog-to-digital converter (ADC) 17 convert ing a low-pass filtered signal into digital samples applied via a signal line 33 to a digital comparator 34 implemented in the microprocessor 8A of the control unit 8. The analog- to-digital converter 17 is adapted to convert the low-pass filtered signal received from the low-pass filter 30 into a digital signal or samples applied to the digital comparator 34 implemented in the microprocessor 8A of the control unit 8. The digital comparator 34 implemented in the microproces sor 8A is adapted to compare the low-passed filtered digital signal output by the analog-to-digital converter 17 with a first adjustable digital threshold value TH1 to detect a low- frequency drift of the electrical voltage at the power supply path 10 as also illustrated in Fig. 10B. The digital compara tor COMP134 is adapted to generate a high logic signal if a low-frequency drift is detected wherein the high logic signal is supplied via the signal line 35 to an input of the AND gate 14 as shown in Fig. 3.

The overvoltage detection circuit 12 as shown in Fig. 3 fur ther comprises a fast analog comparator COMP2 36 connected to the output of the high-pass filter 28 via signal line 37. In a possible implementation, the analog comparator COMP236 can be formed by a Schmitt trigger circuit as also illustrated in the implementation of Fig. 4. The analog comparator 36 is adapted to compare the rectified voltage output by the recti fier 27 having been high-pass filtered by the high-pass fil ter (HPF) 28 with a threshold set point TH2 to detect over voltage transients TR in the electrical voltage at the power supply path 10 as also illustrated in Fig. 10A. The analog comparator 36 is adapted to generate a logic enable signal applied via control line 13 to an input of the AND gate 14 as shown in Fig. 3. The generated logic enable signal is provid ed to enable a switch-off of the at least one semiconductor power switch 5 provided within the associated power supply path 10 by the driver circuit 6 if an overvoltage transient TR has been detected by the analog comparator 36. In the em bodiment shown in Fig. 3, the threshold set point of the ana log comparator COMP236 of the overvoltage detection circuit 12 can be set by the microprocessor 8A of the control unit 8 via a digital-to-analog converter DAC 38. The threshold set point TH2 can comprise in a first operation mode of the pro tection apparatus 1 a fixed threshold. Further, the threshold set point TH2 can comprise in a second operation mode of the protection apparatus 1 also a moving threshold.

The overvoltage detection circuit 12 illustrated in the em bodiment of Fig. 3 comprises an analog high-pass filter (HPF) 28 and an analog low-pass filter (LPF) 30. A provision of the analog high-pass filter 28 and of the analog low-pass filter 30 is optional. Accordingly, in alternative embodiments, the overvoltage detection circuit 12 may dispense with the high- pass filter (HPF) 28 and with the low-pass filter (LPF) 30. The analog-to-digital converter (ADC) 17 and the digital-to- analog converter (DAC) 38 can in a possible implementation also be integrated in the control unit 8. The sampling rate of the ADC 17 and the conversion rate of the DAC 38 can be controlled by the microprocessor 8A.

Fig. 4 shows a circuit diagram for illustrating a possible exemplary embodiment of a protection apparatus 1 according to the first aspect of the present invention. Fig. 4 and Fig. 8 show the driver circuit 6 in more detail. As shown in Fig. 8, the driver circuit 6 comprises a low voltage side 6A and a high voltage side 6B separated by transformers Tl, T2. The overvoltage detection circuit 12 is connected at nodes 15A, 15B to a AC line connected to the power supply path 10 and to a neutral line N. The overvoltage detection circuit (ODC) 12 comprises at its input side in the illustrated em bodiment a potential separation circuit 26 which is imple mented by two resistors 26A, 26B having a high resistance of more than 1 megaohm. This high resistance provides for a po tential separation of the input of the overvoltage detection circuit 12 from the high voltage power supply path. The high resistance of the resistors 26A, 26B provides for a high im pedance coupling to input terminal 2 which can be connected to an AC grid or power supply network PSN to avoid any excess current flows into the circuitry of the overvoltage detection circuit 12. The input terminal 2 may be connected to a DC power supply source in an alternative embodiment. In an al ternative implementation, the potential separation circuit 26 may be implemented by other means, for instance by an induc tive coupling. The rectifier 27 is implemented in the illus trated embodiment as a bridge rectifier comprising four di odes D. The bridge rectifier 27 is adapted to rectify the electrical voltage received from the potential separation circuit 26 to provide a rectified output voltage. The analog comparator COMP236 is implemented in the illustrated embodi ment by a Schmitt trigger circuit. In the illustrated imple mentation, the inverting input (-) of the operational ampli fier of the Schmitt trigger circuit is connected via a Z- diode 38 to the bridge rectifier circuit 27. The Z-diode 38 provides more robustness against false triggering of the ana log comparator COMP236 compared to a mere resistive cou pling. The Schmitt trigger comparator 36 comprises a hystere sis. The output voltage provided by the bridge rectifier 27 can be supplied via a signal conditioning circuitry 39 consisting of two resistors 39A, 39B via signal lines 31A, 31B to the input of the analog-to-digital converter (ADC) 17. The logic sig nals carried via the signal lines 31A, 31B provide infor mation about a signal amplitude at the AC line connected to the input terminal 2 of the protection apparatus 1. The ana- log-to-digital converter 17 converts the received signal into digital samples applied via the signal line 33 to the digital comparator 34 implemented in the microprocessor 8A of the control unit 8. The digital comparator 34 is adapted to com pare the converted digital samples with a first adjustable digital threshold value TH1 to detect a low-frequency drift of the electrical voltage at the AC line connected to the in put terminal 2 of the protection apparatus 1. The digital comparator 34 provides a high voltage signal if a low- frequency drift is detected and the high logic signal is ap plied via signal line 35 to an input of the AND gate 14. An advantage of the implementation shown in Fig. 4 is that the comparator 34 can be implemented in the microcontroller 8A of the control unit 8 and can be controlled directly by a con trol program executed by the microprocessor 8A. Accordingly, the thresholds can be set in this control path by a software control program.

Further, the threshold set point of the analog comparator, e.g. the Schmitt trigger 36, is set in the illustrated imple mentation by the microprocessor 8A of the control unit 8 via the digital-to-analog converter (DAC) 38 as shown in Fig. 4. In a first operation mode of the protection apparatus 1, a fixed threshold is set. In this operation mode, the analog comparator COMP236 is triggered only depending on an abso lute amplitude (superposition of 50 Hz and overvoltage peak). In a second operation mode of the protection apparatus 1, a moving threshold is set. In this second operation mode, a signal-to-noise ratio SNR can be increased during normal op eration of the protection apparatus 1. The comparator set point can be reduced while a 50 Hz signal is high and can be increased if a 50 Hz AC signal is low.

The analog fast Schmitt trigger comparator COMP236 provides in the illustrated implementation a high logic signal if the AC voltage U_AC is in an admissible range and applies this high logic signal via the signal line 13 to the first input of the AND gate 14. In contrast, if the AC voltage U_AC is too high and an overvoltage is present, the analog comparator 36 provides a low logic signal applied via the signal line 13 to the first input of the AND gate 14. Accordingly, the output signal of the analog comparator COMP2 36 (Schmitt trigger) provides an enable signal enabling the logical control signal travelling from the microprocessor 8A via the second input of the AND gate 14 to the driver input IN at the low voltage side 6A of the driver circuit 6. The control unit 8 can re ceive a switch-on or a switch-off command CMD from the entity 11, i.e. from a user interface or from a system level con troller. If the received command CMD is an ON command, a high logic signal is supplied via the control line 35 to the sec ond input of the AND gate 14. This high logic signal can only travel to the output of the AND gate 14 and can be supplied via the signal line 20 to the driver input IN if the enable signal ENABLE provided by the analog comparator 36 is high. Accordingly, if there are high-frequency transients TR on the AC line of the power supply path 10, the ENABLE-signal is low and blocks the AND gate 14 such that the non-inverting input IN+ at the low voltage side 6A of the driver circuit 6 does not receive a high logical signal, even if a logic high switch-on command is output by the control unit 8 via line 35. A user controllable switch-on, switch-off signal is ap plied by the microprocessor 8A via the signal line 35 to the second input of the AND gate 14. If a high logical signal is applied to both signal inputs of the AND gate 14, a high lev el control signal is applied to the driver input IN at the low voltage side 6A of the driver circuit 6. The driver cir cuit 6 can be provided by a driver circuit chip having pins on the low voltage side 6A and pins on the high voltage side 6B. The signal transfer across the galvanic isolation is im plemented by transformers Tl, T2 providing an inductive cou pling between the low voltage side 6A and the high voltage side 6B of the driver circuit 6. In the embodiment illustrat ed in Fig. 4, the signal line 20 connects the output of the AND gate 14 with a non-inverting driver input IN+ of the driver circuit 6. In a possible implementation, the driver circuit 6 further comprises an inverting driver input.

The driver circuit 6 illustrated in Fig. 4 can comprise an IED020112-B2 driver circuit produced by Infineon Technologies as shown in Fig. 8. The driver circuit 6 consists of two gal vanically separated parts. The low voltage side 6A is con nected to the overvoltage detection circuitry and to the mi croprocessor 8A of the control unit 8. The output side 6B of the driver circuit 6 is connected to the high voltage power supply path 10. The driver output OUT at the high voltage side 6B can use integrated MOSFETs to provide a rail-to-rail output signal. The driver output OUT is connected directly via signal lines 15A, 15B to the control gate 21A, 21B of the semiconductor power switches 5A, 5B as shown in Fig. 4. The semiconductor power switches 5A, 5B are in the illustrated implementation power N-MOSFETs. The power MOSFETs 5A, 5B are connected in the illustrated embodiment in series to associ- ated current rise speed sensor components 4A, 4B implemented as coils. These coils 4A, 4B are provided to generate sensor signals to provide overcurrent protection. The semiconductor power switches 5A, 5B as well as the current rise speed sen sor components 4A, 4B are provided within the power supply path 10 connecting the input terminal 2 with the output ter minal 3. The coils 4A, 4B can be connected via a rectifier stage 40 (shown in more detail in Fig. 9) to the DESAT input pin at the high voltage side 6B of the driver circuit 6. The voltage drop AUs along the semiconductor power switch 5A, 5B corresponds to a drain source voltage U_DS. The voltage drop AUs along the semiconductor power switch 5 and the voltage drop AU₄ along the current rise speed sensor component 4, i.e. coil 4, is applied as a sum voltage ¾ to the DESAT driver input of the driver circuit 6. The current rise speed sensor component 4 does not only measure the current rise speed dl/dt but can also provide additional protection of the semiconductor power switch 5 by limiting the voltage drop, i.e. the drain source voltage U_DS at the power MOSFET 5. The sum voltage ¾ comprises the voltage drop AU₄ of the coil 4 having a linear dependency from the current rise speed (dl/dt), plus a voltage drop AUs along the semiconductor pow er switch 5 having a non-linear drain source voltage U_DS. The driver circuit 6 is adapted to determine based on the re ceived sum voltage ¾ an occurring short circuit within the power supply path 10. In a possible embodiment, the driver circuit 6 can switch off the power switch 5 upon detection of an overcurrent within less than 1 psec. The inductivity L of the current rise speed sensor component 4 can be adapted in dividually to the physical limitations of the used semicon ductor power switch 5. The coil 4 is very robust against en vironmental influences and does not involve any electronic circuitry to generate a sense voltage AU₄. Consequently, the probability that the hardware sensor component 4 fails during operation of the protection apparatus 1 is extremely low. In contrast to conventional electronic circuits such as differ entiators, the use of the hardware sensor component 4, in particular a coil, makes the protection apparatus 1 robust and increases its operation lifetime. It is of note that the switch-off operation in case of an overcurrent is performed by the analog driver circuit 6 without involving the relative slow control unit 8. Switch-off operations are performed au tomatically in response to a detected overvoltage. This de tection is performed by the overvoltage detection circuit 12. The switch-off operation caused by a detected overvoltage is performed by the driver circuit 6 without involving the slow control unit 8 so that an extremely low switch-off period of less than 1 msec and even in the range of several microsec onds can be achieved. Also in case that an overcurrent is de tected by means of the voltage drop along the coil 4 and the power switch 5, also a very fast switch-off operation is triggered without involving the slow control unit 8. Accord ingly, a switch-off of the at least one power switch 5 in the power supply path 10 can also be achieved in a short switch- off period of less than 1 msec. The current rise speed sensor component 4 is sensitive and generates a sense voltage Alh even before an electrical current flowing to the load 9 reaches a high current level which potentially can damage components of the connected load 9. A fast switch-off opera tion provided by the hardware driver circuit 6 in response to a detected overvoltage and/or in response to a detected over current guarantees that only a small portion of the electri cal energy is supplied to the connected load 9 in case of an overvoltage and/or in case of an occurred overcurrent. An applied AC supply voltage U_AC applied to the terminal 2 can comprise in a possible implementation a frequency of e.g. 50 to 60 Hz. The current rise speed sensor component 4 can comprise a coil which comprises in a possible implementation an inductivity L of around 1 pH(AU4~L dl/dt) microhenry. With the protection apparatus 1 according to the present inven tion, the driver circuit 6 does operate independently from the control unit 8 to switch off the associated semiconductor power switches 5A, 5B within a brief reaction time if an overvoltage or an overcurrent has been detected.

In the embodiment comprising the load current sensor compo nent 7 as illustrated in Fig. 2, the protection apparatus 1 further provides also protection against an overload state. Accordingly, the protection apparatus 1 provides simultane ously different protection mechanisms at the same time using a single driver circuit 6.

For overload protection, a logic signal applied to the driver input IN+ travels through the gates of the low voltage side 6A and is inductively coupled into the high voltage side 6B of the driver circuit 6 and travels along the gates to the driver output OUT of the driver circuit 6. In contrast, for overcurrent protection, the sum voltage ¾ is directly in jected into the DESAT input pin at the high voltage side 6B and travels through a comparator K3 along gates to the driver output OUT. The threshold voltage of the comparator K3 can be adjustable in a possible implementation. Consequently, it is possible to adjust the sensitivity of the driver circuit 6 with respect to an overcurrent represented by the sum voltage U_å applied to the DESAT input at the high voltage side 6B of the driver circuit 6. With the protection apparatus 1 com prising an overvoltage detection circuit 12 a voltage at the power supply path 10 is monitored and in case of an overvolt age event, the semiconductor power switch 5 is switched off, i.e. opened, automatically as long as the overvoltage is pre sent. As long as the semiconductor power switch 5 is turned off, the high impedance between source and load 9 keeps the overvoltage apart from the connected load 9. To ensure proper operation, the blocking voltage of the at least one semicon ductor power switch 5 is higher than any expected overvoltage at the power supply grid side.

The advantage of the protection apparatus 1 according to the present invention is that it can monitor each phase of a mul tiple-phase power supply system or power supply network PSN connected to the input terminals 2 individually. Accordingly, if an overvoltage and/or an overcurrent is detected on one of the power supply lines of the power supply network PSN, a switch-off of the semiconductor power switch 5 is triggered to protect the load 9 connected to the output terminals 3 of the protection apparatus 1. The detection response time pro vided by the protection apparatus 1 is sufficient also to handle high-frequency overvoltage transients TR. The switch- off period in case of transients TR provided by the protec tion apparatus 1 according to the present invention is in a possible implementation in a range of several microseconds.

In any case, the reaction time is less than 1 msec. This can be achieved because the driver circuit 6 comprises a very low propagation delay of less than 200 nsec. Further, a high de gree of flexibility is achieved by the digital adjustable turn-off thresholds for each power supply path 10 which can be set in a possible implementation via a user interface con nected to the microprocessor 8A of the control unit 8. The connected load 9 can comprise different kinds of loads, in particular inductive loads such as motors. The load can also comprise resistive loads such as heaters.

The protection apparatus 1 according to the present invention provided between the power supply network PSN and the load 9 is fully controllable and has fast semiconductor power switches 5 connected to the driver output OUT of the driver circuit 6. In case that the voltage at the input terminal 2 of the power supply path 10 exceeds an adjustable threshold value, the semiconductor power switch 5 is automatically switched off with a very small delay time. This delay time is defined by signal propagation delays along the control path between node 15 and the control gate 21 of the semiconductor power switch 5 as also illustrated in Fig. 1. After the at least one semiconductor power switch 5 has been switched off it comprises a very high impedance which suppresses any over current flowing from the power supply network PSN to the con nected load 9 if an overvoltage event has been detected. In a possible embodiment, if the overvoltage has been disappeared the at least one semiconductor power switch 5 can be automat ically switched on again after a waiting period. With the protection apparatus 1 according to the present invention, the impedance between the source and the load 9 is lifted in case of a detected overvoltage event to provide additional protection for the load 9. The semiconductor power switch 5 can provide in the switched-off state an impedance of more than 1 megaohm protecting the load 9 against overvoltage. The semiconductor power switch 5 provides in the switched-on state a low resistance so that only few dissipation power is generated. Fig. 5 shows a possible embodiment of a protection apparatus 1 according to the present invention. In the illustrated em bodiment, the protection apparatus 1 comprises three parallel power supply paths 10-1, 10-2, 10-3. Each of the power supply paths 10-1, 10-2, 10-3 comprises an associated control path 18-1, 18-2, 18-3 which can be implemented as illustrated in the embodiment of Fig. 1. Accordingly, each power supply path 10-1, 10-2, 10-3 can be protected separately against overcur rent and/or against overvoltage. Each power supply path 10-i can comprise at least one semiconductor power switch 5. Fur ther, the power supply path 10-i can comprise additional com ponents such as a current rise speed sensor component 4 or a load current sensor component 7 connected in series. Each control path 18-1 can comprise a separate overcurrent detec tion circuit 12. The control unit 8 of the protection appa ratus 1 can be provided in a possible implementation for all three control paths 18-1, 18-2, 18-3.

Figs. 6A to 6B illustrate alternative possible implementa tions for the provision of semiconductor power switches 5 in the power supply path 10. In a preferred embodiment, each power supply path 10 is provided with a pair of N-MOSFETs controlled by a single driver circuit 6 as illustrated in Fig. 6A. The provision of two power MOSFETs connected in se ries does increase the provided blocking voltage in the power supply path 10 when the two power MOSFETs are switched off by the driver circuit 6. Instead of power MOSFETs, also IGBTs can be used. Further, it is possible to use Sic MOSFETs.

Fig. 6B illustrates the provision of parallel connected power MOSFET pairs within the power supply path 10 controlled by a common driver circuit 6. The implementation illustrated in Fig. 6B provides for increased current capability of the pow- er supply path 10 which may be required depending on the use case.

Fig. 6C illustrates a further possible implementation where several overlapping pairs of semiconductor power switches 5 are controlled by several driver circuits 6-i in response to a control signal output by the AND gate 14 and applied to the driver inputs of the different driver circuits 6 illustrated in Fig. 6C. Because of the high number of serial connected semiconductor power switches 5 as shown in Fig. 6C, the blocking voltage can be increased significantly depending on the use case.

Fig. 6D shows a further possible alternative implementation forming a combination of the embodiment illustrated in Fig. 6B and of the embodiment illustrated in Fig. 6C. In the embodiment shown in Fig. 6D, several power switches 5 are connected in series and several power switches 5 are connect ed in parallel to be driven by a corresponding driver circuit 6. In the illustrated example of Fig. 6D, six semiconductor power switches 5 are connected in series and three semicon ductor power switches 5 are connected in parallel. The embod iment as shown in Fig. 6 provides for an increased blocking voltage and a higher current capability of the power supply path 10 at the same time. The number of semiconductor power switches 5 connected in series and connected in parallel can vary depending on the use case, in particular depending on the supply voltage U_AC of the power supply network PSN and depending on the connected loads 9.

Further embodiments of the protection apparatus 1 are possi ble. In a possible embodiment, the protection apparatus 1 does not only comprise one overvoltage detection circuit (ODC) 12 but two overvoltage detection circuits 12. In this embodiment, a first overvoltage detection circuit (ODC1) 12 can be connected to the input terminal 2 of the associated power supply path 10 and can be adapted to determine a momen tary voltage state at the input terminal 2. The second over voltage detection circuit (ODC2) 12 can be connected to the output terminal 3 of the associated power supply path 10 and can be adapted to determine a momentary voltage state at the output terminal 3. Accordingly, this embodiment has the ad vantage that it not only monitors the voltage states on the input side but also on the output side of the protection ap paratus 1. In this embodiment, the momentary voltage state at the input terminal 2 determined by the first overvoltage de tection circuit (ODC1) 12 and the momentary voltage state at the output terminal 2 determined by the second overvoltage detection circuit (ODC2) 12 can be processed to determine a momentary overall voltage state at both terminals, i.e. at the input terminal 2 and at the output terminal 3 of the pro tection apparatus 1. The momentary voltage state at the input terminal 2 and the momentary voltage state at the output ter minal 3 can be combined in a possible implementation logical ly by a logic gate to trigger the driver circuit 6 of the protection apparatus 1 to switch off the at least one semi conductor power switch 5 of the associated power supply path 10 automatically if an overall overvoltage state of both ter minals 2, 3 of the protection apparatus 1 has been detected.

In a further possible embodiment of the protection apparatus according to the first aspect of the present invention, the current rise speed sensor component 4, i.e. a coil, and the at least one semiconductor power switch 5 as well as the load current sensor component 7 which are connected in series along the power supply path 10 do form a secondary current path within the protection apparatus 1 provided between the input terminal 2 and the output terminal 3. In this embodi ment, the protection apparatus 1 can comprise an additional primary current path having a controllable mechanical switch such as a Thomson switch provided between the input terminal 2 and the output terminal 3 of the protection apparatus 1 and being connected in parallel to the second current path, i.e. to the power supply path 10 of the protection apparatus 1. In case that the mechanical switch is switched off by a control ler during operation, a current flowing through the primary current path is deviated to the parallel secondary current path provided by the power supply path 10 such that the oc currence of an electric arc at the mechanical contact of the mechanical switch is suppressed.

Fig. 7 shows a flowchart to illustrate an exemplary embodi ment of a method to provide protection against overvoltage. The method comprises in the illustrated embodiment two main steps.

In a first step SI, an overvoltage at the power supply path 10 is detected by means of an overvoltage detection circuit (ODC) 12 which supplies a control signal via control signal lines 13 at the AND gate 14 and the signal line 20 to the driver input IN at the low voltage side 6A of the driver cir cuit 6 to trigger automatically a switch-off of the semicon ductor power switch 5 in the power supply path 10 in a fur ther step S2. The switch-off of the semiconductor power switch 5 within the power supply path 10 can be performed very fast in a switch-off period of less than 1 msec. This switch-off period is defined by the circuitry of the over voltage detection circuit 12 and the internal circuitry of the driver circuit 6. The switch-off period of less than 1 msec. as defined by the circuitry between node 15 and the control gate 21 of the at least one semiconductor switch 5 in the control loop illustrated in Fig. 1. Since the driver cir cuit 6 comprises an internal propagation delay of less than 200 nsec, the switch-off period can in a possible implementa tion be even lower and may comprise only a few microseconds. This provides for a very effective overvoltage protection of the connected load 9. The overvoltage protection method pro vides overvoltage protection in particular also against high- frequency transients TR as illustrated in Fig. 10A.

The protection apparatus 1 according to the present invention has the additional advantage that a switch-off of the semi conductor power switch 5 does not require that the received sinusoidal power supply voltage must be at 0 volt to perform a switching-off. The switching-off can be performed at any time independent on the current state of the received sinus oidal AC supply voltage U_AC- By using semiconductor power switches 5 and the very fast measurement circuit including the overvoltage detection circuit 12 and the driver circuit 6 it is possible to protect the load 9 efficiently and to in crease the operation lifetime of the load 9.

Fig. 8 shows a circuit diagram of a possible exemplary imple mentation of a driver circuit 6 used by the protection appa ratus 1 according to the first aspect of the present inven tion in more detail. The driver circuit 6 as shown in Fig. 8 can be used to drive an IGBT or a power MOSFET. As can be seen in Fig. 8, the driver circuit 6 consists of two galvani cally separated parts. The driver circuit 6 comprises a low voltage side 6A and a high voltage side 6B. The low voltage side 6A comprises a non-inverting input IN+ and an inverting input IN-. The two sides 6A, 6B are separated galvanically and coupled by transformers Tl, T2 as shown in Fig. 8. The non-inverting input IN+ on the low voltage side 6A is used to receive the logical output signal from the AND gate 14. The output OUT on the high voltage side 6B is used to control the gates 21 of the semiconductor power switch 5 at the control line 19.

A DESAT input on the high voltage side 6B is used to receive the sum voltage ¾ from the current rise speed sensor compo nent 4 and the voltage drop AUs along the power switch 5 as illustrated in Fig. 2. The sum voltage ¾ at the DESAT input at the high voltage side 6B of the driver circuit 6 can be compared with the threshold voltage U_TH at the comparator K3 as illustrated in Fig. 8. If the sum voltage ¾ exceeds this configurable threshold voltage U_TH, a logic high signal trav els along the logic gates in a control loop within the high voltage side 6B to the driver output OUT of the driver cir cuit 6. The internal propagation delay from the DESAT input to the driver output OUT within the high voltage side 6B of the driver circuit 6 is very low and does not exceed 200 nsec. If the sum voltage ¾ exceeds a configurable threshold voltage U_TH, the high logical signal travels along an OR gate OR1 and AND gate AND1 and a further AND gate AND2 to an oper ation amplifier AMP driving the output stage at the driver output OUT. This internal control loop has a propagation de lay time of less than 200 nsec.

The logic signal applied to the non-inverting input IN+ of the driver circuit 6 is applied to an AND gate AND3 and cou pled by the transformer Tl to the AND gate AND2 on the high voltage side 6B to be output by the driver output OUT on the high voltage side 6B to trigger the switching of the connect ed semiconductor switch 5. The signal propagation delay be- tween the driver input IN+ and the driver output OUT does al so not exceed 200 nsec.

Fig. 9 shows in more detail the circuitry connecting the coils 4A, 4B with the DESAT driver input at the high voltage side 6B of the driver circuit 6. Accordingly, the protection apparatus 1 uses a single driver circuit 6 both for overcur rent detection by processing the sum signal ¾ applied to the DESAT input on the output side 6B of the driver circuit 6 and by processing the logical signal applied to the logical driv er input IN+ on the low voltage side 6A of the driver circuit 6. Both the signal path from the logic input IN+ to the driv er output OUT in the signal path between the DESAT input and the driver output have a low propagation delay of less than 200 nsec. Fig. 9 shows the circuitry connecting the coils 4A, 4B with the DESAT input on the high voltage side 6B of the driver circuit 6 in more detail.

The protection apparatus 1 comprises an input terminal 2 to receive a power supply voltage U_AC from a power supply net work PSN having for instance a voltage of 400 volt or more. The power supply path 10 comprises pairs of semiconductor power switches 5A, 5B associated with current rise speed sen sor components 4, in particular coils. The circuitry is sym metrical for positive current half waves and negative current half waves of the AC current applied to the load 9 via the power supply path 10. Each coil 4A, 4B comprises an associat ed semiconductor power switch 5A, 5B as shown in Fig. 9. In a possible implementation, both coils 4A, 4B can comprise an inductivity L of less than about 2.2 microhenry. The power switches 5A, 5B can be implemented by power MOSFETs. In the illustrated implementation, diodes can be connected in paral lel to each coil 4A, 4B to reduce self-induction. The power switches 5A, 5B are connected to a bridge rectifier circuit comprising in the illustrated implementation two pairs of complementary transistors Q1 to Q4. At the output side of the bridge rectifier circuit, a capacitor C can be provided to provide a predetermined minimal delay. This delay can have an influence on the switch-off period. In a possible implementa tion, the delay can be adjusted by changing the capacity of the capacitor C thus adjusting the switch-off period to the requirements of the respective use case, for instance in a range between 1 psec and 1 msec. Resistors Rl, R2 as shown in Fig. 9 comprise a resistance which can be configured to ad just the sensitivity of the circuitry illustrated in Fig. 9. As can be seen in Fig. 9, the DESAT input at the high voltage side 6B of the driver circuit 6 is connected to the output of the bridge rectifier circuit to receive the sum voltage ¾ of the power switches 5A, 5B and the associated current rise sensor components 4A, 4B. The driver circuit 6 generates con trol voltages applied to the gates 21A, 21B of the illustrat ed two semiconductor power switches 5A, 5B as shown in Fig.

4. The driver circuit 6 is adapted to detect an occurring overcurrent, in particular a short circuit current, depending on the voltages generated directly by the sensor components 4A, 4B and to switch off the associated semiconductor power switches 5A, 5B upon detection of a short circuit current flowing through the current path between the input terminal 2 and the output terminal 3 along the power supply path 10 within a short switch-off period of less than 1 msec depend ing on the configuration and the adjusted capacitance of the capacitor C. A switch-off of even 2 to 5 psec can be achieved. In the illustrated exemplary embodiment of Fig. 9, the driver circuit 6 comprises a single IGBT driver ICIED020/12-B2 manufactured by Infineon Technologies. Other driver circuits 6 can also be used, in particular ASICs. In a possible implementation, the current rise speed sensor component 4 can also be implemented by another component sen sor coil, in particular by a resistor with a corresponding local measurement circuit adapted to generate directly an electrical voltage U corresponding to the current rise speed of the electrical current I flowing through the respective sense resistor. This resistor can comprise an NTC or PTC re sistor. In a possible implementation, the resistance of the used resistor 4 can be temperature-dependent. The tempera ture-dependent resistance of the resistor 4 can be configured individually to the physical limitations of the associated semiconductor power switch 5.

Figs. 10A, 10B illustrate different scenarios for overvoltag es which can be detected by an overvoltage detection circuit 12 of the protection apparatus 1 according to the present in vention. The applied power supply voltage U_AC is sinusoidal and comprises a frequency of e.g. 50 to 60 Hz. In the example shown in Fig. 10A, transients TR can occur in the applied voltage signal which may cause damage to the connected load 9. These high-frequency transients or glitches can be detect ed reliably by the overvoltage detection circuit 12 by means of the analog comparator 36.

Fig. 10B illustrates a slow drift of the received power sup ply voltage U_AC which may also cause damage to the connected load 9. This load frequency drift can be connected by the overvoltage detection circuit 12 as well by means of the ana- log-to-digital converter (ADC) 17 and the digital comparator 34 implemented in the microprocessor 8A of the control unit 8. Accordingly, the overvoltage detection unit 12 of the protec tion apparatus 1 can handle different kinds of overvoltage scenarios, in particular high-frequency transients TR as shown in Fig. 10A and also low voltage drifts as shown in Fig. 1OB.

In the illustrated embodiment of the overvoltage detection circuit 12 as shown in Fig. 4, the overvoltage detection cir cuit 12 comprises two main paths, i.e. a fast signal path which can be used for detecting transients TR in the received supply voltage and a slower signal path adapted to detect low drifts in the received AC power supply voltage U_AC-

The sensitivity of the overvoltage detection circuit 12 can be controlled by setting the threshold values TH1 for the digital comparator 34 in the slow control path and setting the threshold voltage TH2 for the comparator of the Schmitt trigger 36 in the fast control path of the overvoltage detec tion circuit 12. These threshold values TH1, TH2 are con trolled in a possible implementation by a software executed by the microprocessor 8A. In a possible implementation, the overvoltage detection software executed by the microprocessor 8A can also control the sampling rate of the analog-to- digital converter 17. These parameters can be either preset and configured or can also be controlled to some extent by a remote high level controller connected to the control unit 8 of the protection circuit 1. The overvoltage detection soft ware can be stored in a possible implementation in a program storage of the control unit 8. The overvoltage detection software can be customized and adapted to the specific use case, in particular to the amplitude of the power supply voltages U_AC and the type of load 9 connected to the output terminal 3 of the protection apparatus 1. The type of the load 9 connected to the output terminal 3 of the protection apparatus 1 can comprise a resistive load, a capacitive load or an inductive load, in particular an AC motor. For the dif ferent types of loads, different customized software programs or subroutines can be stored in the storage of the control unit 8 as firmware. In a further implementation, different customized overvoltage detection programs or routines can al so be loaded from a database connected to the program storage of the control unit 8 via a data interface. This data inter face can be connected via a data network to a remote database or server. For instance, a user may select a basic type of the connected load 9 such as a resistive or an inductive load as well as the amplitude of the supply voltage U_AC provided by the power supply network PSN such that an associated fit ting overvoltage detection software is loaded or activated to perform the overvoltage detection routine. In this way, a high degree of flexibility is achieved allowing to adapt the overvoltage detection flexibly and fast for different use cases and operation scenarios. In a possible implementation, the protection apparatus 1 comprises a user interface adapted to input basic parameters such as the type of the connected load 9 and the amplitude of the power supply network PSN to select an associated fitting overvoltage detection program or routine to perform the overvoltage detection. These parame ters can be set in a possible implementation in a configura tion mode of the protection apparatus 1. A user can further adjust the switch-off period depending on the use case, for instance by adjusting the capacitance of the capacitor C within the DESAT rectifier stage 40 shown in Fig. 9. Also, the threshold values of the comparators 34, 36 of the over voltage detection circuit 12 can be configured. The configu ration values can be stored in a configuration memory of the control unit 8. Figs. 11A, 11B show schematically a switch-off performed by a protection apparatus 1 in case of an observed transient with in the received power supply voltage. As can be seen in Fig. 11A, a transient TR may exceed a predefined threshold to trigger an automatic switch-off of the at least one semicon ductor power switch 5 within the power supply path 10 such that the load current I_I flowing to the load 9 is interrupted as shown in Fig. 11B. The switch-off period At between the detection of the transient TR and the switch-off of the load current I_I comprises in a preferred embodiment less than 1 msec. The switch-off period shown in Fig. 11A can be as low as a few microseconds. An advantage of the protection appa ratus 1 according to the present invention is that the switching off of the power supply path 10 can take place at any time and is not restricted to a switch-off at the zero voltage crossings of the received AC power supply voltage U_AC· Further, the switch-off period provided by the overvolt age detection according to the present invention can be ex tremely short, i.e. even as low as a few microseconds. A very fast switch-off of the load current I_I protects the load 9 and increases also its operation lifetime.

The protection apparatus 1 according to the present invention can be integrated into a housing of a device. This device can comprise a protruding electrical contact at the input termi nal 2 adapted to be plugged into corresponding slots of a hy brid power busbar of a busbar system. In a possible embodi ment, the protection apparatus 1 comprises three input termi nals 2-1, 2-2, 2-3 as also illustrated in Fig. 5 and has three corresponding protruding electrical contacts which can be plugged into corresponding slots of a hybrid busbar of a busbar system. In a possible implementation, the protection apparatus 1 can also be integrated into an NH fuse housing.

The protection apparatus 1 can be connected with its input terminal 2 to a busbar of a busbar system either directly or indirectly by means of an adapter device. The load protection apparatus 1 can also be mounted directly or indirectly by means of an adapter to a DIN rail or to a top hat rail or to a conventional busbar.

Claims

Claims:

1. A protection apparatus (1) for protection of an electri cal load (9), said protection apparatus (1) comprising:

- at least one input terminal (2) adapted to receive a power supply voltage;

- at least one semiconductor power switch (5) connected in series to the associated input terminal (2) in a power supply path (10) through which the electrical load (9) connected to an output terminal (3) of said power supply path (10) receives an electrical load cur rent, I_I; said protection apparatus (1) further comprising:

- a control unit (8) having a microprocessor (8A) adapted to control a driver circuit (6) of said protection ap paratus (1) having a low voltage side (6A) and having a high voltage side (6B) to switch the at least one semi conductor power switch (5) provided in the power supply path (10) on or off in response to a received switch command (CMD), said protection apparatus (1) further comprising: at least one overvoltage detection circuit, ODC, (12) connected to the input terminal (2) or to the output terminal (3) of an associated power supply path (10) of said protection apparatus (1) and adapted to detect an overvoltage state at the respective power supply path (10) of said protection apparatus (1) and to control the driver circuit (6) directly through a control line (13) connected to a first input of an AND gate (14) be ing connected to a driver input (IN) at the low voltage side (6A) of the driver circuit (6) to switch off the at least one semiconductor power switch (5) provided within the associated power supply path (10) if an overvoltage state has been detected by the overvoltage detection circuit, ODC, (12) to provide protection of the connected electrical load (9) against overvoltage, wherein the overvoltage detection circuit (12) compris es a digital comparator, COMP1, (34) implemented in the microprocessor (8A) of the control unit (8) and adapted to compare a low-pass filtered signal output by an ana- log-to-digital converter, ADC, (17) of said overvoltage detection circuit (12) with a first adjustable digital threshold value, TH1, to detect a low-frequency drift of the electrical voltage at the respective terminal (2;3) of the protection apparatus (1) and is further adapted to generate a high logic signal if a low- frequency drift is detected, wherein the generated high logic signal is applied to a second input of said AND gate (14).

2. The protection apparatus (1) according to claim 1 wherein the control unit (8) is connected to a user interface or to a system level controller of an automation system to receive the switch command (CMD).

3. The protection apparatus (1) according to claim 1 or 2 wherein the at least one semiconductor power switch (5) provided in the power supply path (10) comprises an IGBT or a power MOSFET having a blocking voltage which exceeds the normal operation voltage of the power supply voltage, U_IN, applied to the input terminal (2) of the power sup ply path (10), wherein a control gate (21) of the at least one semiconductor power switch (5) is connected di rectly to a driver output (OUT) at a high voltage side (6B) of the driver circuit (6).

4. The protection apparatus (1) according to any of the pre ceding claims 1 to 3, wherein the protection apparatus

(1) comprises three input terminals (2-1, 2-2, 2-3) and three output terminals (3-1, 3-2, 3-3) connected with each other via associated power supply paths (10-1, 10-2,

10-3), wherein for each power supply path (10-1, 10-2, 10-3) an associated overvoltage detection circuit, ODC, (12-1, 12-2, 12-3) is provided wherein the overvoltage detection circuit, ODC, (12-i) is connected to the input terminal (2-i) and/or the output terminal (3-i) of the respective power supply path (10-i).

5. The protection apparatus (1) according to any of the pre ceding claims 1 to 4, wherein the driver circuit (6) is adapted to switch off the at least one semiconductor pow er switch (5) provided within the power supply paths (10) within a switch-off period of less than 1 millisecond de fined by the signal propagation delays along the first control line (13, 20) and along an internal circuitry of the driver circuit (6).

6. The protection apparatus (1) according to claim 5, wherein the signal propagation delay of the internal circuitry of the driver circuit (6) between the driver input (IN) at the low voltage side (6A) of the driver circuit (6) and the driver output (OUT) at the high voltage side (6B) of the driver circuit (6) is less than 200 nsec.

7. The protection apparatus (1) according to any of the pre ceding claims 1 to 6, wherein each overvoltage detection circuit, ODC, (12-i) connected to the input terminal (2) or to the output terminal (3) of an associated power sup ply path (10-i) comprises

- a rectifier (27) adapted to rectify the electrical voltage at the respective terminal (2; 3) and

- an analog-to-digital converter, ADC, (17) adapted to convert the low-pass filtered signal applied to the an alog-to-digital converter, ADC, (17) into a digital signal applied to a digital comparator, COMP1, (34) im plemented in the microprocessor (8A) of the control unit (8) of said protection apparatus (1) and being adapted to compare the low-pass filtered signal output by the analog-to-digital converter, ADC, (17) with a first adjustable digital threshold value, TH1, to de tect a low-frequency drift of the electrical voltage at the respective terminal (2; 3) and is further adapted to generate a high logic signal if a low-frequency drift is detected.

8. The protection apparatus (1) according to claim 7 wherein each overvoltage detection circuit, ODC, (12-i) further comprises a fast analog comparator, COMP2, (36), in par ticular a Schmitt trigger circuit, adapted to compare the rectified voltage output by the rectifier (27) with a threshold set point, TH2, to detect overvoltage transi ents in the electrical voltage of the respective terminal (2; 3) of said protection apparatus (1), and is further adapted to generate a logic enable signal to enable a switch-off of at least one semiconductor power switch (5) provided in the associated power supply path (10) by the driver circuit (6) if an overvoltage transient is detect ed by the analog comparator, COMP2, (36).

9. The protection apparatus (1) according to claim 7 or 8 wherein the logical signal generated by the digital com parator, COMP1, (34) implemented in the microprocessor (8A) of the control unit (8) and the logic enable signal generated by the analog comparator, COMP2, (36) of the overvoltage detection circuit, ODC, (12) are logically combined by the AND gate (14) of the overvoltage detec tion circuit, ODC, (12) to provide a logical voltage state signal indicating a detected momentary voltage state of the respective terminal (2; 3) of the associated power supply path (10), wherein the logical voltage state signal is applied to the driver input (IN) at the low voltage side (6A) of the driver circuit (6).

10. The protection apparatus (1) according to any of the pre ceding claims 7 to 8 further comprising an analog high- pass filter, HPF, (28) provided between the rectifier (27) and the analog comparator, COMP2, (36) and adapted to perform a high-pass filtering of the rectified voltage output by the rectifier (27).

11. The protection apparatus (1) according to any of the pre ceding claims 7 to 10 wherein the rectifier (27) of the overvoltage detection circuit, ODC, (12) is connected via a potential separation circuit (26) to the associated power supply path (10).

12. The protection apparatus (1) according to any of the pre ceding claims 1 to 11 wherein the driver circuit (6) is adapted to supply a supervision signal to the micropro cessor (8A) of the control unit (8) adapted to inform the microprocessor (8A) about a current operation state of the driver circuit (6) and/or about a current switching state of the at least one semiconductor power switch (5).

13. The protection apparatus (1) according to claim 8, where in the threshold set point of the analog comparator, COMP2, (36) of the overvoltage detection circuit, ODC,

(12) is set by the microprocessor (8A) of the control unit (8) via a digital-to-analog converter, DAC, (38), wherein the threshold set point, TH2, comprises in a first operation mode of the protection apparatus (1) a fixed threshold and comprises in a second operation mode of the protection apparatus (1) a moving threshold.

14. The protection apparatus (1) according to any of the pre ceding claims 1 to 13 further comprising a load current sensor component (7) connected in series with the at least one semiconductor power switch (5) of the power supply path (10), wherein the load current sensor compo nent (7) is adapted to measure continuously the load cur rent, I_I, flowing through the at least one semiconductor power switch (5) in the power supply path (10) to the connected electrical load (9), wherein the measured load current, I_I, is notified by the load current sensor com ponent (7) to the microprocessor (8A) of the control unit (8) to determine a momentary load state of the electrical load (9) connected to the output terminal (3) of the re spective power supply path (10).

15. The protection apparatus (1) according to claim 13 fur ther comprising a current rise speed sensor component (4), in particular a coil, connected in series with the at least one semiconductor power switch (5) and the load current sensor component (7) and adapted to generate a voltage drop (AU₄₎ corresponding to the current rise speed of the load current, I_I, flowing from the input terminal (2) via the current rise speed sensor component

(4) and the at least one semiconductor power switch (5) and the load current sensor component (7) along the power supply path (10) to the respective output terminal (3) of the power supply path (10), wherein the driver circuit (6) of the protection appa ratus (1) is adapted to detect an occurring overcurrent depending on the voltage drop (Du₄₎ generated by the cur rent rise speed sensor component (4) and a voltage drop

(hUs) along the at least one semiconductor power switch

(5) applied directly as a sum voltage (¾) to a driver input (DESAT) at a high voltage side (6B) of the driver circuit (6) and to switch off said at least one semicon ductor power switch (5) automatically upon detection of an overcurrent within a switch-off period of less than 1 msec to provide protection against overcurrent, wherein the switch-off period of less than 1 msec is de fined by the signal propagation delays along a control signal loop including a connection circuitry which con nects the current rise speed sensor component (4) with the driver input (DESAT) at the high voltage side (6B) of the driver circuit (6) and an internal circuitry within the high voltage side (6B) of the driver circuit (6).

16. The protection apparatus (1) according to any of the pre ceding claims 1 to 14 comprising a first overvoltage detection circuit, ODC1, which is connected to the input terminal (2) of the associated power supply path (10) and is adapted to determine a mo mentary voltage state at the input terminal (2) and com prising a second overvoltage detection circuit, ODC2, connected to the output terminal (3) of the associated power supply path (10) and adapted to determine a momentary voltage state at the output terminal (3).

17. The protection apparatus (1) according to claim 16 where in the momentary voltage state at the input terminal (2) determined by the first overvoltage detection circuit, ODC1, and the momentary voltage state at the output ter minal (3) determined by the second overvoltage detection circuit, ODC2, are processed to determine a momentary overall voltage state at both terminals (2; 3) of said protection apparatus (1) which are logically combined by a logic circuit to trigger the driver circuit (6) of said protection apparatus (1) to switch off the at least one semiconductor power switch (5) automatically if an over all overvoltage state at both terminals (2; 3) of said protection apparatus (1) has been detected.

18. The protection apparatus (1) according to any of the pre ceding claims 15 to 17 wherein the current rise speed sensor component (4), the at least one power switch (5) and the load current sensor component (7) are connected in series along the power supply path (10) and form a secondary current path (IB) provided between the input terminal (2) and the output terminal (3) of the protec tion apparatus (1), wherein a primary current path (1A) of said protection apparatus (1) including a controllable mechanical switch, MSW, is provided between the input terminal (2) and the output terminal (3) of said protec tion apparatus (1) connected in parallel to the secondary current path (IB).