EP4101036A4 - Diodenlaserverpackung mit langer lebensdauer - Google Patents

Diodenlaserverpackung mit langer lebensdauer Download PDF

Info

Publication number
EP4101036A4
EP4101036A4 EP21750248.3A EP21750248A EP4101036A4 EP 4101036 A4 EP4101036 A4 EP 4101036A4 EP 21750248 A EP21750248 A EP 21750248A EP 4101036 A4 EP4101036 A4 EP 4101036A4
Authority
EP
European Patent Office
Prior art keywords
long life
diode laser
laser packaging
life diode
packaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP21750248.3A
Other languages
English (en)
French (fr)
Other versions
EP4101036A1 (de
Inventor
Mark Zediker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuburu Inc
Original Assignee
Nuburu Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuburu Inc filed Critical Nuburu Inc
Publication of EP4101036A1 publication Critical patent/EP4101036A1/de
Publication of EP4101036A4 publication Critical patent/EP4101036A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H01S5/02224—Gas-filled housings the gas comprising oxygen, e.g. for avoiding contamination of the light emitting facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
EP21750248.3A 2020-02-03 2021-02-03 Diodenlaserverpackung mit langer lebensdauer Withdrawn EP4101036A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062969541P 2020-02-03 2020-02-03
PCT/US2021/016462 WO2021158696A1 (en) 2020-02-03 2021-02-03 Long lifetime laser diode packaging

Publications (2)

Publication Number Publication Date
EP4101036A1 EP4101036A1 (de) 2022-12-14
EP4101036A4 true EP4101036A4 (de) 2024-04-17

Family

ID=77200623

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21750248.3A Withdrawn EP4101036A4 (de) 2020-02-03 2021-02-03 Diodenlaserverpackung mit langer lebensdauer

Country Status (4)

Country Link
EP (1) EP4101036A4 (de)
JP (1) JP2023513104A (de)
CN (1) CN115349206A (de)
WO (1) WO2021158696A1 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030214987A1 (en) * 2002-04-03 2003-11-20 Fuji Photo Film Co., Ltd. Laser module and production process thereof
EP1760849A1 (de) * 2004-06-02 2007-03-07 Matsushita Electric Industrial Co., Ltd. Halbleiter-laser-bauelement und herstellungsverfahren dafür
US20070147449A1 (en) * 2005-12-27 2007-06-28 Sanyo Electric Co., Ltd. Semiconductor laser device and manufacturing method thereof
WO2018231884A1 (en) * 2017-06-13 2018-12-20 Nuburu, Inc. Very dense wavelength beam combined laser system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60108162T2 (de) * 2000-10-26 2006-01-05 Atlantium Lasers Ltd. Desinfektion durch verpackung
US6788724B2 (en) * 2001-07-06 2004-09-07 Intel Corporation Hermetically sealed external cavity laser system and method
JP2004022918A (ja) * 2002-06-19 2004-01-22 Fuji Photo Film Co Ltd レーザモジュールの製造方法
US6953291B2 (en) * 2003-06-30 2005-10-11 Finisar Corporation Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
JP2005109402A (ja) * 2003-10-02 2005-04-21 Fuji Photo Film Co Ltd レーザモジュールおよびその製造方法
JP2005109403A (ja) * 2003-10-02 2005-04-21 Fuji Photo Film Co Ltd レーザモジュールの製造方法
JP2006054366A (ja) * 2004-08-13 2006-02-23 Fuji Photo Film Co Ltd レーザモジュール
US20120273470A1 (en) * 2011-02-24 2012-11-01 Zediker Mark S Method of protecting high power laser drilling, workover and completion systems from carbon gettering deposits

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030214987A1 (en) * 2002-04-03 2003-11-20 Fuji Photo Film Co., Ltd. Laser module and production process thereof
EP1760849A1 (de) * 2004-06-02 2007-03-07 Matsushita Electric Industrial Co., Ltd. Halbleiter-laser-bauelement und herstellungsverfahren dafür
US20070147449A1 (en) * 2005-12-27 2007-06-28 Sanyo Electric Co., Ltd. Semiconductor laser device and manufacturing method thereof
WO2018231884A1 (en) * 2017-06-13 2018-12-20 Nuburu, Inc. Very dense wavelength beam combined laser system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2021158696A1 *

Also Published As

Publication number Publication date
EP4101036A1 (de) 2022-12-14
WO2021158696A1 (en) 2021-08-12
CN115349206A (zh) 2022-11-15
JP2023513104A (ja) 2023-03-30

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