EP4055204A1 - Method for coating a component - Google Patents
Method for coating a componentInfo
- Publication number
- EP4055204A1 EP4055204A1 EP19800914.4A EP19800914A EP4055204A1 EP 4055204 A1 EP4055204 A1 EP 4055204A1 EP 19800914 A EP19800914 A EP 19800914A EP 4055204 A1 EP4055204 A1 EP 4055204A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- gas phase
- coating
- silicic acid
- containing precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 71
- 239000011248 coating agent Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002243 precursor Substances 0.000 claims abstract description 64
- 239000007789 gas Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 44
- -1 silicic acid ester Chemical class 0.000 claims abstract description 36
- 239000000126 substance Substances 0.000 claims abstract description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910000077 silane Inorganic materials 0.000 claims abstract description 17
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims abstract description 14
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 12
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 12
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 11
- 239000012948 isocyanate Substances 0.000 claims abstract description 11
- 150000002513 isocyanates Chemical class 0.000 claims abstract description 11
- 150000002825 nitriles Chemical class 0.000 claims abstract description 11
- 150000003573 thiols Chemical class 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims abstract description 10
- 150000002540 isothiocyanates Chemical class 0.000 claims abstract description 10
- 229920002554 vinyl polymer Polymers 0.000 claims abstract description 10
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 claims abstract description 9
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 9
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 125000003277 amino group Chemical group 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 17
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- FMGBDYLOANULLW-UHFFFAOYSA-N 3-isocyanatopropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCN=C=O FMGBDYLOANULLW-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical group NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 239000003651 drinking water Substances 0.000 description 2
- 235000020188 drinking water Nutrition 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- RWLDCNACDPTRMY-UHFFFAOYSA-N 3-triethoxysilyl-n-(3-triethoxysilylpropyl)propan-1-amine Chemical compound CCO[Si](OCC)(OCC)CCCNCCC[Si](OCC)(OCC)OCC RWLDCNACDPTRMY-UHFFFAOYSA-N 0.000 description 1
- HKMVWLQFAYGKSI-UHFFFAOYSA-N 3-triethoxysilylpropyl thiocyanate Chemical compound CCO[Si](OCC)(OCC)CCCSC#N HKMVWLQFAYGKSI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- GPIARXZSVWTOMD-UHFFFAOYSA-N 4-[chloro(dimethyl)silyl]butanenitrile Chemical compound C[Si](C)(Cl)CCCC#N GPIARXZSVWTOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- ZBKFYXZXZJPWNQ-UHFFFAOYSA-N isothiocyanate group Chemical group [N-]=C=S ZBKFYXZXZJPWNQ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920006162 poly(etherimide sulfone) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
Definitions
- the invention relates to a method for coating the surface of a component by means of chemical deposition from the gas phase, silicon-containing precursors being used.
- the coating of surfaces with a layer of amorphous S1O2 is known. Such coatings can be applied by means of a CVD process or by means of a sol-gel process.
- US Pat. No. 3,556,841 A describes a CVD process for applying such a coating.
- a gas mixture of tetraethoxysilane or ethyltriethoxysilane, an organic acid and nitrogen is passed onto the surface of the component to be coated.
- the component is kept at a temperature of 300 to 600 ° C, so that a layer of amorphous S1O2 is deposited on the surface of the component from the gas mixture.
- the reactive gas mixture is in the reaction space
- CONFIRMATION COPY circulated and back mixed with fresh precursor. This enables a particularly high yield of the substances used.
- US Pat. No. 5,763,018 A discloses that, as an alternative to tetraethoxyorthosilane, octamethylcyclotetrasiloxane, tetrapropoxysilane or tetramethylcyclotetrasiloxane can also be used as precursors in a CVD process for applying a dielectric coating.
- the precursors mentioned are suitable for certain applications. However, they cannot meet every requirement that is placed on the coating of components today.
- a coating should represent a permanent barrier against the transport of substances between the substrate and the environment.
- the transport of substances from the substrate to the environment for example the release of metal ions, should be prevented, in other cases the penetration of gases or liquids, in particular corrosive gases or liquids, to the surface of the substrate should be prevented.
- a coating must therefore have a high and permanent impermeability to certain substances. The impermeability must be reliably maintained even under extreme and / or changing environmental conditions, such as temperature.
- the coating is intended to serve as a flaft mediator between the substrate and another substance. In these applications, too, it must be possible to ensure that the coating functions permanently under extreme and / or changing environmental conditions.
- the invention is based on the object of specifying a method for applying an improved coating to surfaces.
- the invention relates to a coating process in which at least one tetra-alkoxy-silane and one or more substances from the group of functionalized silicic acid esters are used as precursors be used.
- a tetra-alkoxy-silane can be understood as meaning a substance of the general formula Si (ORi) 4, where R, are four mutually independent organic hydrocarbon groups, in particular alkyl groups.
- the hydrocarbon groups Ri can be completely or partially identical or also different.
- the central silicon atom is connected to a total of four hydrocarbon groups via four oxygen atoms.
- the at least one functionalized silicic acid ester is a silicic acid ester which has at least one Si-C bond. At least one silicon atom of the silicic acid ester is therefore bound directly to at least one organic radical.
- the organic radical has a phenyl, vinyl, allyl, thiol, amino, acryloxy, epoxy, nitrile, isocyanate, isothiocyanate or methacrylate group.
- the precursors are converted into the gas phase and transported into a reaction chamber by means of a stream of inert or reducing gas, for example nitrogen or a mixture of nitrogen and up to 5% by volume of hydrogen (forming gas).
- the gas phase also contains water and a catalyst. Acids and bases are suitable as catalysts.
- the catalyst is preferably a carboxylic acid, particularly preferably acetic acid.
- a chemical reaction of the silicon-containing precursors with water takes place in the gas phase in the reaction chamber. The speed of the reaction can be influenced by the temperature of the gas phase, by the concentration of the substances and by the degree of mixing of the substances.
- the silicon-containing reaction products of the precursors are deposited on the surface of the component to be coated and form there through crosslinking Coating.
- the component is located in the reaction space.
- the surface of the component can preferably be at least partially made of a ceramic, for example glass or Al2O3, made of a high-temperature plastic, for example polyetheretherketone, polyetherimide, or polyether sulfone, and / or a metal, for example made of copper, a copper alloy, aluminum, aluminum alloy, steel or stainless steel .
- the pressure of the gas phase is preferably between 500 and 1200 hPa.
- the process can thus be carried out in a pressure range that does not require a large outlay in terms of apparatus. In this pressure area it is also possible to deposit even and dense layers on components with complex outer contours.
- the process is preferably carried out in a temperature range between 250.degree. C. and 350.degree. In this temperature range, the reaction speed is sufficiently high to achieve short process times. On the other hand, the process temperature is still low enough to avoid undesirable consequences for the component, such as a change in strength.
- the properties of the coating can be varied by selecting the precursors. Investigations on which the invention is based have shown that the use of one or more functionalized silicic acid esters as an additional precursor in With such a coating process, the properties of the deposited coating can be influenced in a targeted manner.
- a silicic acid ester is used in the process as an additional precursor together with at least one tetra-alkoxy-silane.
- the tetra-alkoxy-silane provides the chemical building blocks from which the coating is mainly composed, i.e. the basic building blocks for the amorphous silicon dioxide.
- the silicic acid ester used as an additional, second silicon-containing precursor contains at least one organic group that is not contained in the tetra-alkoxy-silane.
- the additional silicic acid ester is functionalized by this group.
- Both the tetra-alkoxy-silane and the additional, second silicon-containing precursor react in the gas phase with water and the reaction products of all silicon-containing precursors contribute to the build-up of the coating through crosslinking.
- the reaction products of the tetra-alkoxy-silane form the basic structure of the coating (matrix).
- the reaction products of the functionalized silicic acid ester are incorporated into this basic structure without breaking the silicon-carbon bond.
- the organic groups of the functionalized silicic acid ester change the network built up from the reaction products of the tetra-alkoxy-silane and in this way cause the coating to have special properties.
- the tetraalkoxy silane and the at least one functionalized silicic acid ester are used in a molar mixing ratio of 95: 5 up to 50:50 in the gas phase.
- the tetra-alkoxy-silane is therefore usually added in excess based on the amount of substance, while the at least one functionalized silicic acid ester or the entirety of all functionalized silicic acid esters represents the minority in the mixture of silicon-containing substances. Due to the excess of the tetra-alkoxy-silane, the coating is mainly built up from the reaction products of the tetra-alkoxy-silane.
- a coating produced with the method according to the invention contains, depending on the precursor used, at least one component which is a phenyl, vinyl, allyl, thiol, amino, acryloxy, epoxy, nitrile,
- the advantages achieved with the invention consist in particular in the fact that the properties of the coating can be specifically influenced and thus controlled through the incorporation of special organic groups into the basic structure of the coating, which is essentially composed of amorphous silicon dioxide.
- a coating of amorphous silicon dioxide is very advantageous in and of itself because of its chemical resistance. This advantageous property can be combined with additional advantageous properties by incorporating the organic groups mentioned.
- the coating can thus be adapted to the respective task.
- the chemical resistance of a coating made of amorphous silicon dioxide is therefore supplemented by further advantageous properties.
- the thiol groups When using silicic acid esters with a thiol group, the thiol groups form stable metal-sulfur bonds with certain metals, for example copper or silver. This increases the layer adhesion on this substrate. Thiol groups on the layer surface also make them accessible for subsequent synthetic modification.
- acrylate groups are formed on the surface, which are important for bonding with acrylic or methacrylic compounds.
- epoxides When using silicic acid esters with an epoxy group, epoxides are incorporated into the ceramic matrix with ring opening, whereby the organic content of the coating can be increased. The layer then behaves like a polymer. On the surface, the epoxides and their reaction products help to establish chemical bonds with alcohols, amines, thiols, etc.
- silylthione urethane structures are created in the ceramic matrix of the coating. These help to form a stable metal-sulfur bond when connecting to metals. Furthermore, the structure of the silylthione urethane structures leads to better crosslinking of the ceramic matrix, as a result of which there is a higher proportion of quaternary crosslinked silicate units in the matrix. Since the thion urethane that forms is chemically more reactive than the corresponding urethane, it can be post-synthetically functionalized better.
- the functional groups contained in the coating can be detected qualitatively and quantitatively using infrared spectroscopic methods .
- the respective functional group is identified on the basis of characteristic oscillation frequencies or on the basis of the characteristic wave numbers corresponding to the oscillation frequencies, measured in cm 1 .
- silicic acid esters can preferably be used as precursors: tris (2-methoxyethoxy) vinylsilane, allyltrimethoxysilane, phenyltrimethoxysilane, triethoxyvinylsilane or diphenyldimethoxysilane.
- These silicic acid esters contain a phenyl, vinyl or allyl group.
- the following functionalized silicic acid esters can preferably be used as precursors alone or in combination with one or more of the aforementioned precursors: (3-aminopropyl) trimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (3-triethoxysilylpropyl) amine, N- [3- (trimethoxysiliyl) propyl] butylamine, tris (dimethylamino) silane or
- the following functionalized silicic acid esters can preferably be used as precursors alone or in combination with one or more of the aforementioned precursors: (3-cyanopropyl) dimethylchlorosilane, (3-glycidoxypropyl) trimethoxysilane, 3-isocyanatopropyltrimethoxysilane, 3-thiocyanatopropyltriethoxysilane, methacrylic acid-3- trimethoxysilylpropyl ester or
- silicic acid esters contain an acryloxy, epoxy, nitrile, isocyanate, isothiocyanate or methacrylate group.
- the volume fraction of all functionalized silicic acid esters in the gas phase can be at least 0.05% by volume, in particular at least 0.15% by volume and at most 0.62% by volume, in particular at most 0.45% by volume .-%. These Concentration ranges are found to be favorable or particularly favorable for forming a coating with the desired properties.
- the volume ratio of the entirety of all functionalized silicic acid esters to the catalyst can preferably be at least 0.08 and at most 0.12.
- the catalyst interacts with both the tetra-alkoxy-silane and the functionalized silicic acid esters.
- the quantitative ratio between catalyst and functionalized silicic acid esters must therefore be adjusted.
- the area mentioned has proven to be advantageous in order to achieve a uniform, interference-free and thus dense coating.
- the amount of substance of all functionalized silicic acid esters can preferably be 20 to 40%, particularly preferably 25 to 35% of the amount of substance of all silicon-containing precursors. If the proportion of functionalized silicic acid esters is below 20%, then its influence on the coating is minimal. With proportions above 40%, the basic structure of the coating is disrupted to a relatively large extent by the functional groups and the basic properties of the coating, such as corrosion resistance, cannot always be guaranteed.
- the di-silane formed as well as the methacrylate and amino groups are incorporated into the coating. These are therefore available on the surface of the coating. Due to their chemical properties, they can form chemical bonds with organic materials such as paints or adhesives, which improve the adhesion to the base material. As a result, the coating acts as an adhesion promoter between the organic material and the metallic substrate.
- the silicon-containing precursors are metered into the gas phase separately from one another, in particular to prevent the two functionalized silicic acid esters from reacting prematurely in an uncontrolled manner.
- metal solder foils for example made of copper or nickel, placed between embossed and stacked stainless steel plates.
- the stainless steel plates are then soldered together by heating the stack to the melting point of the solder foils.
- the task was to reduce the release of copper and nickel ions into the drinking water with such a plate heat exchanger.
- the surfaces that come into contact with water were coated by means of a method based on the CVD method described in the publication WO 2011/026565 A1.
- the process gas used to coat the plate heat exchangers contained approximately 93% by volume of forming gas, consisting of 95% by volume of nitrogen and 5% by volume of hydrogen, as well as acetic acid, water and, as silicon-containing precursors, tetramethylorthosilicate and 3-isocyanatopropyltrimethoxysilane.
- the total proportion of all silicon-containing precursors in the gas phase was between 1.0 and 1.5% by volume.
- the volume ratio of 3-isocyanatopropyltrimethoxysilane to acetic acid was approximately 1:10.
- the amount of 3-isocyanatopropyltrimethoxysilane based on the total amount of substance of the silicon-containing precursors, i.e.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2019/000305 WO2021089102A1 (en) | 2019-11-06 | 2019-11-06 | Method for coating a component |
Publications (1)
Publication Number | Publication Date |
---|---|
EP4055204A1 true EP4055204A1 (en) | 2022-09-14 |
Family
ID=68501556
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19800914.4A Pending EP4055204A1 (en) | 2019-11-06 | 2019-11-06 | Method for coating a component |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220389572A1 (en) |
EP (1) | EP4055204A1 (en) |
CN (1) | CN114729447A (en) |
WO (1) | WO2021089102A1 (en) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3556841A (en) | 1967-04-11 | 1971-01-19 | Matsushita Electronics Corp | Process for forming silicon dioxide films |
JPH098032A (en) | 1995-06-20 | 1997-01-10 | Sony Corp | Formation of insulation film |
US20050181633A1 (en) * | 2004-02-17 | 2005-08-18 | Hochberg Arthur K. | Precursors for depositing silicon-containing films and processes thereof |
DE102004008442A1 (en) * | 2004-02-19 | 2005-09-15 | Degussa Ag | Silicon compounds for the production of SIO2-containing insulating layers on chips |
WO2011026565A1 (en) | 2009-09-04 | 2011-03-10 | Wieland-Werke Ag | Method for applying layers |
CN101724342B (en) * | 2009-12-17 | 2012-09-05 | 复旦大学 | Super-biparental self-cleaning coating material and preparation method thereof |
DE102012206510A1 (en) * | 2012-04-20 | 2013-10-24 | Evonik Industries Ag | Novel, readily synthesizable, spontaneously water-soluble, substantially VOC-free, environmentally friendly (meth) acrylamido-functional siloxanol systems, processes for their preparation and use |
US20190069496A1 (en) * | 2017-09-07 | 2019-03-07 | Joseph Wofford | Robotic irrigation system and devices |
-
2019
- 2019-11-06 WO PCT/EP2019/000305 patent/WO2021089102A1/en unknown
- 2019-11-06 CN CN201980101845.0A patent/CN114729447A/en active Pending
- 2019-11-06 EP EP19800914.4A patent/EP4055204A1/en active Pending
- 2019-11-06 US US17/774,287 patent/US20220389572A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN114729447A (en) | 2022-07-08 |
US20220389572A1 (en) | 2022-12-08 |
WO2021089102A1 (en) | 2021-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112009001790B4 (en) | Coating composition, process for its preparation and passivated, galvanized material | |
DE60219179T2 (en) | Heat-stable, moisture-curing polysilazanes and polysiloxanes | |
DE69614857T2 (en) | PREPREG FOR PRINTED CIRCUITS, RESIN LACQUER, RESIN COMPOSITION AND LAMINATE FOR PRINTED CIRCUITS | |
WO2005090502A2 (en) | Microcoating comprising siloxanes | |
DE2732753B2 (en) | Coating agents | |
DE112011100802B4 (en) | Use of an improved substrate in the manufacture of a printed circuit board and use of a method of making an improved substrate for a printed circuit board in a method of manufacturing a printed circuit board | |
WO2015067776A1 (en) | Anticorrosion layer and process for production thereof | |
EP2337629A2 (en) | Adsorber element and method for producing an adsorber element | |
EP2743320A1 (en) | Multistage process for coating steel prior to thermoforming | |
DE3923034C2 (en) | ||
DE69028472T2 (en) | Steel strip coated with an organic composite material with improved corrosion resistance and weldability | |
DE19617040C1 (en) | Process for the production of catalytically active coatings for the synthesis of hydrogen cyanide | |
EP4055204A1 (en) | Method for coating a component | |
WO2020120142A1 (en) | Coating material for producing an adsorbent, porous, flexible coating for a heat exchanger and method for producing said coating material | |
EP4430136A1 (en) | Method for bonding sheet-metal parts | |
EP1922371B9 (en) | Weldable corrosion protection agent and binding agent | |
DE19505449C2 (en) | Method for producing a layer system on substrates and the layer system produced with this method | |
EP0718254A2 (en) | Anti-oxidative, abrasion-resistant protective coating for SiC bodies | |
DE102022106446A1 (en) | Film-forming compositions containing molybdate-derived coatings | |
DE202007007303U1 (en) | Corrosion resistant substrate | |
DE102012011597B4 (en) | Hybrid siloxane-based sol-gel composition, process for their preparation and their use | |
EP3554686A2 (en) | Method for applying photocatalytic coatings without using binders, and use of a coating | |
DE102004002304B4 (en) | Process for producing a coated carbon / carbon composite and composite material produced therefrom | |
DE102014107117B4 (en) | Enamelled wire, wound body and method for producing an enameled wire | |
DE69618837T2 (en) | Process for coating an electrical sheet and the electrical sheet coated in this way |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: UNKNOWN |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20220421 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |