Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
  • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
  • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
  • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
  • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
  • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0093—Wafer bonding; Removal of the growth substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

• the present description relates generally to systems and methods for protecting optoelectronic devices against electrostatic discharges.
• optoelectronic devices devices suitable for converting an electrical signal into electromagnetic radiation or vice versa, and in particular devices dedicated to the detection, measurement or emission of electromagnetic radiation.
• An example application relates to a display screen comprising a support on which are fixed separate optoelectronic devices, each optoelectronic device comprising at least one light emitting diode and corresponding to a display pixel.
• Another example of application relates to an image sensor comprising a support on which optoelectronic devices are individually fixed, each optoelectronic device comprising at least one photodiode for capturing signals relating to an image pixel.
• ESD ElectroStatic Discharge
• an object of an embodiment is to at least partially overcome the drawbacks of the systems and methods for protecting optoelectronic devices against ESDs described above.
• Another object of an embodiment is to protect the optoelectronic devices against ESDs during the manufacture of the optoelectronic devices.
• Another object of an embodiment is that the optoelectronic devices can be formed on an industrial scale and at low cost.
• One embodiment provides a method for protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an electronic circuit comprising at least one electronic component and an optoelectronic circuit attached to the electronic circuit and comprising at least one optoelectronic component among a light emitting diode or a photodiode, the method comprising forming first and second plates, one of the first or second plate comprising several copies of the electronic circuit and the other of the first or second plate comprising several copies of the optoelectronic circuit, the fixing the first plate to a support, fixing the second plate to the first plate, and separating the electronic devices from each other, wherein the first plate and / or the second plate comprises at least one system for protecting the optoelectronic devices against electrostatic discharges.
• the first plate and / or the second plate comprises a protection circuit against electrostatic discharges electrically connected by electrical connections at least to the electronic components of several electronic circuits and / or to the optoelectronic components of several optoelectronic circuits, the step of separating the electronic devices causing the interruption of the electrical connections between the protection circuit and the electrical components and / or between the protection circuit and the optoelectronic components.
• the protection circuit is connected to the electrical components and to the optoelectronic components by the conductive tracks.
• the conductive tracks are made of a metal or of an electrically non-metallic conductive material, in particular of doped silicon, of doped monocrystalline silicon or of polysilicon.
• the step of separating the optoelectronic devices comprises a step of cutting the first and second plates along cut lines and the conductive tracks are at least partly located on the cutting lines.
• the parts of the conductive tracks which are removed in the cutting step are located in the first plate. According to one embodiment, the parts of the conductive tracks which are removed in the cutting step are located in the second plate.
• One embodiment also provides a structure for implementing the method as defined above, comprising the first and second plates and at least the system for protecting the optoelectronic devices against electrostatic discharges.
• the protection system is common to several optoelectronic devices.
• the protection system comprises a diode.
• Figure 1 is a sectional view, partial and schematic, of an example of an optoelectronic device with light emitting diodes
• FIG. 2 is a sectional view of the structure obtained in a step of an example of a method of manufacturing the optoelectronic device of FIG. 1;
• FIG. 3 is a view in section of the structure obtained in a step of an embodiment of a method of manufacturing the optoelectronic device of FIG. 1 implementing protection against ESDs;
• Figure 4 is a top view, partial and schematic, of the structure shown in Figure 3;
• FIG. 5 is a figure similar to FIG. 3 at another stage of the process;
• Figure 6 is a top view, partial and schematic, of the structure shown in Figure 5;
• FIG. 7 is a sectional view of the structure obtained in a step of another embodiment of a method for manufacturing the optoelectronic device of FIG. 1 implementing protection against ESDs;
• FIG. 8 is a sectional view of the structure obtained in a step of another embodiment of a method of manufacturing the optoelectronic device of FIG. 1 implementing a system for protecting the optoelectronic device against ESDs ;
• FIG. 9 shows an embodiment of an equivalent electric diagram of the structure shown in FIG. 7 or 8;
• FIG. 10 shows an embodiment of an equivalent electrical diagram of the structure shown in FIG. 3;
• Figure 11 is a sectional view, partial and schematic, of a more detailed embodiment of the structure of a display pixel.
• Embodiments of ESD protection systems and methods will be described for optoelectronic devices corresponding to display pixels. However, it is clear that these embodiments can be implemented for other types of optoelectronic devices, for example image pixel sensors.
• Figure 1 is a sectional view, partial and schematic, of an embodiment of a display pixel Pix.
• the display pixel Pix includes from bottom to top in Figure 1:
• control circuit an electronic circuit 10, referred to below as a control circuit
• the control circuit 10 comprises a lower face 12 and an upper face 14 opposite to the lower face 12, the faces 12 and 14 preferably being parallel.
• the control circuit 10 further comprises conductive pads 16 on the lower face 12.
• the control circuit 10 can comprising a semiconductor substrate 18, a stack 20 of insulating layers covering the substrate 18 and conductive tracks 22 of several metallization levels formed between the insulating layers of the stack 20 and connected by conductive vias not shown.
• the control circuit 10 can further comprise electronic components, not shown in FIG. 1, in particular transistors, formed in and / or on the substrate 18.
• An insulating layer, not shown, can cover the semiconductor substrate 18 on the side opposite to it. the stack 20 and delimit the lower face 12 of the control circuit 10.
• the control circuit 10 can further comprise through conductive vias, not shown, extending in the substrate 18, over the entire thickness of the substrate 18, and electrically insulated from the substrate, and making it possible to connect the pads 16 electrically to the front face of the substrate 18.
• the semiconductor substrate 18 is, for example, a substrate made of silicon, in particular of monocrystalline silicon.
• the electronic components can then include insulated gate field effect transistors, also called MOS transistors.
• the substrate 18 can correspond to a non-semiconductor substrate.
• the electronic components can comprise thin film transistors, also called TFT transistors (acronym for Thin-Film transistor), the substrate 18 then possibly not being present.
• the optoelectronic circuit 30 is fixed to the upper face 14 of the control circuit 10.
• the control circuit 10 can be formed directly on the optoelectronic circuit 30.
• the optoelectronic circuit 30 comprises a support 32 on which are formed light emitting diodes LEDs, preferably at least three light emitting diodes.
• the optoelectronic circuit 30 may comprise photoluminescent blocks 34 covering the light emitting diodes LEDs on the side opposite to the control circuit 10. Each photoluminescent block 34 faces at least one of the light emitting diodes LEDs.
• the optoelectronic circuit 30 comprises conductive elements 36, located in the support 32, and connected to the electrodes of the light-emitting diodes DEL.
• the optoelectronic circuit 30 is electrically connected to the control circuit 10 by conductive pads, which may correspond to the conductive elements 36, and which are in contact with conductive pads of the control circuit 10.
• the optoelectronic circuit 30 comprises only the light-emitting diodes LEDs and the conductive elements 36 of these light-emitting diodes LEDs and the control circuit 10 comprises all the electronic components necessary for controlling the light-emitting diodes LEDs of the optoelectronic circuit 30
• optoelectronic circuit 30 may also include other electronic components in addition to light emitting diodes LEDs.
• FIG. 2 is a sectional view of a structure 40 obtained at a step of an example of a method of manufacturing the display pixel Pix of FIG. 1.
• the structure 40 comprises a plate 42 of integrated circuits comprising several examples of the control circuit 10 and a plate 44 comprising several examples of the optoelectronic circuit 30, three examples of the control circuit 10 and of the optoelectronic circuit 30 being shown.
• Each plate 42, 44 can be manufactured separately.
• plate 42 comprising the driver circuits 10 can be fabricated using CMOS transistor fabrication techniques.
• the plate 44 comprising the optoelectronic circuits 30 can then be fixed to the plate 42 comprising the control circuits 10, for example by hybrid molecular bonding.
• the manufacturing process can comprise the temporary fixing of the plate 42 to a support 46, also called a handle, by means of a layer of adhesive 48.
• the use of the handle 16 can in particular be provided after a step of fixing the plate 42 to plate 44 followed by a step of thinning the substrate 18.
• a cutting step can then be implemented to individualize the display pixels Pix.
• the cutout is made on the side of the upper face 49 of the structure 40 which is the face of the plate 44 furthest from the handle 46.
• the display pixels Pix can then be removed from the support 46, and fixed to another. support, for example a printed circuit, to obtain a display screen.
• a display screen can comprise from 10 to 10 9 pixels of display Pix.
• Each display pixel Pix can occupy, in top view, an area of between 1 ⁇ m 2 and 100 mm 2 .
• the thickness of each display pixel Pix can be between 1 ⁇ m and 6 mm.
• Electrostatic discharges can occur during the manufacture of the plates 42, 44 and during the handling of the display pixels Pix once individualized.
• Figures 3 and 4 are respectively a side sectional view and a top view, partial and schematic, of a structure 50 obtained at a step of an embodiment of a method of manufacturing pixels of Pix display as shown in Figure 1 to protect Pix display pixels against ESD during from the steps of manufacturing the display pixels Pix to the individualization of the display pixels Pix.
• the structure 50 comprises all of the elements of the structure 40 shown in Figure 2 and further comprises a protection system 52 against ESD provided in the plate 42 of control circuits 10.
• the protection system 52 aims to form a privileged path for the passage of current in the case of an ESD so as to avoid degradation of the light-emitting diodes LEDs of the optoelectronic circuits 30 and / or of the electronic components of the control circuits 10.
• the protection system 52 can comprise one or more electronic components, for example diodes 54 shown schematically in FIG. 4.
• the protection system 52 corresponds to a simple short-circuit.
• the electronic components making up the protection system 52 are located in a portion of the plate 42, which after the step of separating the display pixels Pix is no longer functional.
• FIG. 4 shows the diodes 54 of the protection system 52 at the peripheral of the plate 42.
• the electronic circuits 10 can be arranged in groups of circuits. electronic and protection systems can be provided for each group of electronic circuits.
• the plate 44 may include light emitting diodes LEDs facing the part of the plate 42 in which the protection system 52 is formed, these light emitting diodes LEDs not being intended for use after the separation step. display pixels Pix.
• the protection system 52 is electrically connected to all the electronic components of the plate 52 or of the plate 44 to be protected against ESD by electrical connections 55 shown in thick lines in Figures 3 and 4.
• the protection system 52 is further connected to one of the conductive pads 16 of the plate 42 which can be grounded.
• the layer of adhesive 48 and the handle 46 may be of conductive materials to facilitate the discharge of the charges passing through the protection system 52.
• the protection system 52 corresponds to a short-circuit provided between the 'one of the conductive pads 16 and the electrical connections 55.
• the electrical connections 55 between the protection system 52 and the light-emitting diodes are made by the conductor elements 36 present in the plate 44.
• the electrical connection between the protection system 52 and the components Electronic electronic circuits 10 can be produced at least in part by the electrical connections between the light-emitting diodes LEDs and these electronic components.
• Figures 5 and 6 are figures respectively analogous to Figures 3 and 4 illustrating the structure obtained after cutting the plates 42 and 44 to individualize the display pixels Pix.
• the cutting step can be performed by laser cutting or plasma cutting.
• the protection system 52 is disposed in a portion of the plate 42 which is not intended to be used as pixels after the cutting step.
• the dimensions of the display pixels are substantially the same as those obtained in the absence of the protection system 52.
• At least part of the electrical connections 55 used to electrically connect the protection system 52 to the display pixels Pix are arranged at the level of the cutting paths of the plates 42 and 44. Therefore, after the cutting step , the electrical connections 55 are interrupted so that the light-emitting diodes LEDs of the optoelectronic circuits 30 and the electronic components of the electronic circuits 10 which were short-circuited by the electrical links 55 are no longer short-circuited.
• the structure of the display pixels Pix is changed as little as possible compared to the structure of the display pixel which would be obtained in the absence of the ESD protection.
• Figure 7 is a sectional view of a structure 60 obtained at a step of another embodiment of a method of manufacturing display pixels Pix having the structure shown in Figure 1 to protect the display pixel Pix against ESD during steps of manufacturing the display pixels Pix until the individualization of the display pixels.
• the structure 60 comprises all the elements of the structure 50 shown in Figure 3 with the difference that the electrical connections 55 between the protection system 52 and the components to be protected are made by conductive tracks 22 formed in the plate 42, for example conductive tracks 22 of any one of the metallization levels, and which may be metal tracks, and in particular conductive tracks 22 of one of the last metallization levels, that is to say the levels furthest from the substrate 18.
• conductive tracks 22 formed in the plate 42, for example conductive tracks 22 of any one of the metallization levels, and which may be metal tracks, and in particular conductive tracks 22 of one of the last metallization levels, that is to say the levels furthest from the substrate 18.
• the conductive tracks 22 used to form the electrical links 55 can be formed. in the penultimate level of metallization of electronic circuits 10.
• Figure 8 is a sectional view of a structure 70 obtained at a step of another embodiment of the method of manufacturing the display pixel Pix of FIG. 1 making it possible to protect the display pixel Pix against ESDs during the steps of manufacturing the display pixel Pix until the individualization of the display pixel.
• the structure 70 comprises all the elements of the structure 50 shown in Figure 3 with the difference that the electrical connections 55 between the protection system 52 and the components to be protected are made by conductive tracks 22 formed in the plate 42, for example conductive tracks of the first metallization level, that is to say the level closest to the substrate 18, which can be conductive tracks of polysilicon.
• the structure 50 shown in Figure 3 has the advantage that the electrical connections 55 between the protection system 52 and the display pixels Pix are close to the face 49 by which the cut is initiated and therefore more easily accessible.
• connection elements between the protection system and the display pixels can be polycrystalline silicon which is a material which can be engraved more easily than a metal or a metal alloy.
• FIG. 9 represents an embodiment of an equivalent electrical diagram of the structure 60 shown in FIG. 7 or of the structure 70 represented in FIG. 8 and
• FIG. 10 represents an embodiment of an electrical diagram equivalent of the structure 50 shown in FIG. 3.
• the optoelectronic circuit 30 comprises at least three light-emitting diodes LEDs, the light-emitting diodes LEDs having a common anode electrode A and comprising separate K cathode electrodes.
• the control circuit 10 comprises, for each light emitting diode LED, a MOS transistor circuit C for controlling the light emitting diode LED comprising a terminal B which is connected to the cathode K of the light emitting diode LED when the plate 44 is attached to the plate 42.
• the control circuit 10 includes a terminal A 'connected to the anode electrode A common to the light-emitting diodes LEDs when the plate 44 is fixed to the plate 42, a GND terminal intended in operation to receive a low reference potential, for example ground, and a VCC terminal intended to receive a high reference potential in operation.
• the high and low potentials can be applied between the conductive pads 16 of the control circuit 10 in operation.
• the terminals B, A ', and VCC may correspond to conductive tracks 22 present in the stack 20 of the electronic circuit 10.
• the protection system 52 is connected to the terminals B, A ', and VCC of all the display pixels Pix, for example by conductive tracks of one of the levels of metallization of the electronic circuit 10 and the protection system 52 is connected to the GND terminals of all the display pixels Pix, for example by means of the layer of conductive adhesive 48 which electrically connects the pads 16 to the Pix display pixel separation step.
• the cutting step causes, for each display pixel Pix, the interruption of the electrical connections 55 between the terminals B, A ', and VCC.
• the protection system 52 is connected to terminals A and K of all the display pixels Pix for example by the elements conductors of the optoelectronic circuits 30 and the protection system 52 is connected to the GND terminals of all the display pixels Pix, for example by means of the layer of conductive adhesive 48 which electrically connects the pads 16 up to step Pixel Display Pixel Separation.
• the protection system 52 can further be connected to the VCC terminals of all the display pixels Pix, for example by conductive tracks of one of the metallization levels of the electronic circuits to ensure that all possible paths of current flow during electrostatic discharges are protected.
• the cutting step causes, for each display pixel Pix, the interruption of the electrical connections between the terminals A and K.
• FIG. 11 is a partial and schematic sectional view of a more detailed embodiment of the display pixel Pix.
• the semiconductor substrate for example monocrystalline silicon, an insulating layer 78 on the side of the lower face 12 and the two conductive pads 16;
• the stack 20 of insulating layers for example of silicon oxide and / or of silicon nitride, covering the substrate 18 and the conductive tracks 22 of several metallization levels formed between the insulating layers of the stack 20 including in particular pads 82 exposed on the upper face 14 of the electronic circuit 10, the conductive tracks 22 of the first metallization level possibly being in polysilicon and in particular forming the gates of the MOS transistors 80 and the conductive tracks 22 of the other metallization levels which may be metal tracks, for example made of aluminum, silver, copper or zinc; and
• the optoelectronic circuit 30 of the display pixel Pix comprises from bottom to top in FIG. 11:
• the support 32 comprising a lower face 86 in contact with the upper face 14 and comprising conductive pads 88 exposed on the lower face 86, in contact with the pads 82, and a multilayer insulating structure 92, for example in silicon oxide and in silicon nitride, extending between the pads 88 and covering the pads 88 and comprising openings 93 exposing portions of the pads 88;
• Threads Microwires or nanowires 94, called threads hereinafter (six threads being shown), each thread 94 being in contact with one of the pads 88 through one of the openings 93;
• a shell 98 comprising a stack of semiconductor layers covering an upper portion of each wire 94 and extending over the insulating layer 96 between the wires 94, the shell 98 notably comprising an active layer which is the layer from which the majority is emitted the radiation provided by the light emitting diode and comprising, for example, confinement means, such as multiple quantum wells;
• a conductive and reflective layer 100 extending over the shell 98 between the wires 94;
• a layer 102 forming an electrode covering, for each wire 94, the shell 98 and extending, in addition, on the conductive layer 100 between the wires 94, the electrode layer 102 being adapted to pass the emitted electromagnetic radiation by light-emitting diodes and being composed of a transparent and conductive material such as indium-tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped with aluminum or gallium, or graphene;
• ITO indium-tin oxide
• ITO Indium Tin Oxide
• each photoluminescent block 34 covering certain sets of light-emitting diodes LEDs or blocks transparent to the radiation emitted by the light-emitting diodes, each photoluminescent block comprising suitable phosphors, when they are excited by the light emitted by the associated light-emitting diodes LEDs, to be emitted light at a wavelength different from the wavelength of light emitted by the associated light emitting diodes LEDs;
• a protective layer 108 covering the insulating layers 106, the side faces of the blocks 34 and the electrode layer 102 between the blocks;
• each wall 110 possibly comprising a core 112 surrounded by a coating 114 reflecting the wavelength of the radiation emitted by the photoluminescent blocks 34 and / or the light emitting diodes LEDs;
• an encapsulation layer 118 covering the entire structure.
• Each wire 94 has for example an average diameter, corresponding for example to the diameter of the disc having the same area as the cross section of the wire 94, between 5 nm and 5 ⁇ m, preferably between 100 nm and 2 ⁇ m, more preferably between 200 nm and 1.5 ⁇ m and a height greater than or equal to greater than 1 time, preferably greater than or equal to 3 times and even more preferably greater than or equal to 5 times the mean diameter, in particular greater than 500 nm, preferably between 1 pm and 50 pm.
• the wires 94 comprise at least one semiconductor material.
• the semiconductor material can be silicon, germanium, silicon carbide, a III-V compound, for example GaN, AIN, InN, InGaN, AlGaN or AlInGaN, a II-VI compound or a combination of at least two of these compounds.
• the light-emitting diodes LEDs are adapted to emit blue light, that is to say radiation whose wavelength is in the range of 430 nm to 490 nm.
• the first wavelength corresponds to green light and is in the range of 510 nm to 570 nm.
• the second wavelength corresponds to red light and is in the range of 600 nm to 720 nm.
• the light-emitting diodes LEDs are for example suitable for emitting ultraviolet radiation.
• the first wavelength corresponds to blue light and is in the range 430 nm to 490 nm.
• the second wavelength corresponds to green light and is in the range of 510 nm to 570 nm.
• the third wavelength corresponds to red light and is in the range of 600 nm to 720 nm.
• the base of the pyramid is inscribed in a polygon whose side dimension is from 100 nm to 10 ⁇ m, preferably between 1 and 3 ⁇ m.
• the polygon forming the base of the pyramid can be a hexagon.
• the height of the pyramid between the base of the pyramid and the top or the top plate varies from 100 nm to 20 ⁇ m, preferably between 1 ⁇ m and 10 ⁇ m.

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• Condensed Matter Physics & Semiconductors (AREA)
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• Devices For Indicating Variable Information By Combining Individual Elements (AREA)

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• 2019
  • 2019-10-16 FR FR1911558A patent/FR3102298B1/fr active Active
• 2020
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