EP3935669A4 - Quantum control devices and methods - Google Patents

Quantum control devices and methods Download PDF

Info

Publication number
EP3935669A4
EP3935669A4 EP20769343.3A EP20769343A EP3935669A4 EP 3935669 A4 EP3935669 A4 EP 3935669A4 EP 20769343 A EP20769343 A EP 20769343A EP 3935669 A4 EP3935669 A4 EP 3935669A4
Authority
EP
European Patent Office
Prior art keywords
methods
control devices
quantum control
quantum
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20769343.3A
Other languages
German (de)
French (fr)
Other versions
EP3935669A1 (en
Inventor
Steve MACLEAN
Francois FILLION-GOURDEAU
Pierre Louis Joseph LEVESQUE
Jean-philippe W. MACLEAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infinite Potential Laboratories Lp
Original Assignee
Infinite Potential Laboratories Lp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infinite Potential Laboratories Lp filed Critical Infinite Potential Laboratories Lp
Publication of EP3935669A1 publication Critical patent/EP3935669A1/en
Publication of EP3935669A4 publication Critical patent/EP3935669A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Quantum devices, e.g. quantum interference devices, metal single electron transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
EP20769343.3A 2019-03-08 2020-03-05 Quantum control devices and methods Pending EP3935669A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962815974P 2019-03-08 2019-03-08
PCT/CA2020/050291 WO2020181362A1 (en) 2019-03-08 2020-03-05 Quantum control devices and methods

Publications (2)

Publication Number Publication Date
EP3935669A1 EP3935669A1 (en) 2022-01-12
EP3935669A4 true EP3935669A4 (en) 2022-06-01

Family

ID=72426026

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20769343.3A Pending EP3935669A4 (en) 2019-03-08 2020-03-05 Quantum control devices and methods

Country Status (5)

Country Link
US (1) US20230187503A1 (en)
EP (1) EP3935669A4 (en)
JP (2) JP7379520B2 (en)
CA (1) CA3131807C (en)
WO (1) WO2020181362A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060099825A1 (en) * 2004-11-09 2006-05-11 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3460618B2 (en) 1999-03-31 2003-10-27 株式会社豊田中央研究所 Semiconductor device and method of manufacturing semiconductor device
US7335908B2 (en) 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
JP4771682B2 (en) 2004-11-09 2011-09-14 富士通株式会社 Quantum device and manufacturing method thereof
KR100796280B1 (en) 2005-12-22 2008-01-21 서울시립대학교 산학협력단 Fabrication Method of Qubit using DNA
AU2009214818B2 (en) 2008-02-11 2014-05-01 Newsouth Innovations Pty Limited Control and readout of electron or hole spin
US7936040B2 (en) * 2008-10-26 2011-05-03 Koucheng Wu Schottky barrier quantum well resonant tunneling transistor
JP6522528B2 (en) 2016-01-08 2019-05-29 日本電信電話株式会社 Quantum gate device and quantum calculation method
GB201612419D0 (en) * 2016-07-18 2016-08-31 Cambridge Entpr Ltd A scalable quantum-confined device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060099825A1 (en) * 2004-11-09 2006-05-11 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DENIS GAGNON ET AL: "Pulse shaping in the terahertz frequency range for the control of photo-excited carriers in graphene", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 26 October 2017 (2017-10-26), XP081037798, DOI: 10.1364/JOSAB.35.003021 *

Also Published As

Publication number Publication date
EP3935669A1 (en) 2022-01-12
JP7379520B2 (en) 2023-11-14
JP2023175842A (en) 2023-12-12
WO2020181362A1 (en) 2020-09-17
JP2022525059A (en) 2022-05-11
CA3131807A1 (en) 2020-09-17
US20230187503A1 (en) 2023-06-15
CA3131807C (en) 2024-03-26

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