EP3903384A1 - Device with reconfigurable metasurface - Google Patents
Device with reconfigurable metasurfaceInfo
- Publication number
- EP3903384A1 EP3903384A1 EP19817351.0A EP19817351A EP3903384A1 EP 3903384 A1 EP3903384 A1 EP 3903384A1 EP 19817351 A EP19817351 A EP 19817351A EP 3903384 A1 EP3903384 A1 EP 3903384A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- switches
- electrodes
- conductive
- switch
- metasurface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 52
- 230000005684 electric field Effects 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 10
- 239000012782 phase change material Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 37
- 239000008188 pellet Substances 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 7
- 230000000712 assembly Effects 0.000 description 6
- 238000000429 assembly Methods 0.000 description 6
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/24—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the orientation by switching energy from one active radiating element to another, e.g. for beam switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
Definitions
- the field of the invention is that of metasurface devices, such as metasurface antennas.
- the invention applies to devices
- Such devices can be used in different applications such as radar applications in avionics and aerospace, high speed communication, space technologies.
- a metasurface is formed by a two-dimensional network of pellets
- An objective of the present invention is to allow the reconfiguration of the
- the field of the invention is that of metasurface devices, such as metasurface antennas.
- the invention is applicable to microwave devices.
- Such devices can be used in different applications such as radar applications in avionics and aerospace, high speed communication, space technologies.
- a metasurface is formed by a two-dimensional network of pellets
- An objective of the present invention is to allow the reconfiguration of the
- the invention relates to a metasurface device comprising a stack of layers comprising a metasurface comprising a two-dimensional network of conductive pads separated by openings, the conductive pads having dimensions less than the wavelength of operation of the metasurface device, the metasurface device comprising a set of switches based on a material capable of passing from the insulating state to the conductive state, and vice versa, under the effect of a variation of an electric field within the material so as to make it possible to selectively connect or isolate between them conductive pads, the switches being interposed between a first set of electrodes and a second set of electrodes making it possible to control the passage of the switches of the set of switches from the conductive state to the insulating state, and vice versa.
- the conductive pads have dimensions less than or equal to l / 50, where l is the operating wavelength of the device.
- the switches of the set of switches are aligned along a set of lines and according to a set of columns, each electrode of the first set of electrodes passing opposite the switches of the set of switches aligned along one of the lines of the set of lines, each electrode of the second set of electrodes passing opposite the switches of the set of switches aligned along one of the columns of the set of columns.
- each switch is a block of material capable of passing from the insulating state to the conductive state, and vice versa, under the effect of a variation of an electric field within the material, the switch being in direct physical contact with an electrode of the first set of electrodes and with an electrode of the second set of electrodes.
- each switch in the assembly is a first embodiment, each switch in the assembly
- switches physically connects two adjacent conductive pads so as to electrically connect them together when the switch is in the state conductor and so as to electrically disconnect them from each other when the switch is in the insulating state.
- the switch connects the two conductive pads
- each switch of the set of switches is arranged opposite a single conductive pad and is connected to a floating mass so as to connect the conductive pad to the floating mass when the switch is in the conductive state and so as to disconnect the conductive pad from the floating mass when the switch is in the insulating state.
- the switch is opposite an electrode of the
- the electrode of the first set being arranged opposite the conductive pad and an electrode of the second set, the electrode of the second set being arranged opposite the conductive pad.
- FIG.1 schematically represented a metasurface of a device according to the invention
- FIG.2 schematically shows an exploded perspective view a
- metasurface device according to a first embodiment of the invention in a planar configuration
- FIG.3 schematically shows a section of the device of [Fig.2] along the plane M
- FIG.4 schematically represents an orthogonal projection, on a plane perpendicular to the z axis, of the conductive pads, openings, switches and electrodes of the first set of the device of [Fig.2],
- FIG.5 schematically represents an orthogonal projection, on a plane perpendicular to the axis z, of the conductive pads, openings, switches and electrodes of the second set of the device of [Fig.2],
- FIG27 shows an example of a network of four connected assemblies capable of being obtained by means of a connection device according to the first embodiment of [Fig.2] to [Fig.5],
- FIG.7 schematically shows an exploded perspective view a
- metasurface device according to a second embodiment of the invention in a planar configuration
- FIG.8 schematically shows a section of the metasurface device of [Fig.2] according to a plane M ’in non-exploded view
- FIG. 10 schematically represents, from below, the electrodes of the second set and a layer of switches comprising the
- FIG.1 illustrates an example of a metasurface of a microstrip type metasurface device according to the invention.
- the device is, for example, an antenna, for example microwave.
- the metasurface 4 includes a two-dimensional periodic network
- the conductive pads 5 are, for example, metal pellets or indium tin oxide or ITO.
- the conductive pads 5 and the openings 6 are substantially self
- the conductive pads 5 are spaced from each other, they do not touch. In other words, the closest points of two adjacent conductive pads are separated by an interval 7. The openings 6 are therefore larger than the conductive pads 5.
- the metasurface therefore includes intervals 7 separating the pellets
- the openings 6 and the conductive pads 5 are substantially square in shape.
- the conductive pads 5 may have a strictly square shape or a substantially square shape with clipped or flattened tops.
- the conductive pads 5 have sides or sub-wavelength dimensions. It is the same for the step of the network.
- the conductive pads 5 have dimensions or sides of lengths less than or equal to 1/50 and preferably between 1/50 and 1/100.
- the size of the interval 7, that is to say the minimum distance between two adjacent pads which can be the distance between two vertices of two adjacent conductive pads, is between l / 1000 and l / 2000.
- l is the operating wavelength of the device.
- the wavelength is approximately 10 mm in air
- the sides of the pellets have a length of between 100 and 200 ⁇ m and the distance between adjacent pellets by their vertices is between 5 and 10 pm.
- the pads 5 and the openings 6 may, for example, have substantially the shape of equilateral triangles or crosses. So the conductive pads are arranged in rows and columns. The columns may or may not be perpendicular to the columns.
- the metasurface antenna 1 comprises a stack of several layers.
- the device is, in these figures, in a planar configuration in which the layers are substantially planar and perpendicular to a stacking axis z.
- metasurface 1 comprises several layers stacked along the z axis, including a substrate 2 formed on a ground plane 3, conductive, and a metasurface 4 formed on the substrate 2.
- the substrate 2 is a layer interposed between the ground plane 3 and the metasurface 4.
- the substrate 2 is a dielectric or a semiconductor.
- the antenna 1 comprises a connection device for selectively connecting conductive pads 5 of the metasurface 4 therebetween.
- the connection device comprises switches 10 able to be
- Each switch 10 is in direct physical contact with at least one conductive pad 5 so that the transition from the insulating state to the conductive state of the switch 10 has an influence on the potential of the conductive pad 5.
- the switches 10 are pellets or blocks of a material with variable electrical conductivity capable of passing from a conductive state to an insulating state under the effect of a variation of an electric field within the material, c that is to say under the effect of a variation of a potential difference between two faces of the material.
- Each switch 10 is, for example, a block of a material to
- phase change The transition from the conductive state to the insulating state, and vice versa, is done by a phase change of the material under the effect of a predetermined electric field within the material, for example, under the effect of a electric pulse generating this electric field transiently within the material.
- Certain phase change materials have the particularity of reversibly passing from an amorphous phase to a crystalline phase as a function of the temperature which can be operated by electric or thermal or even optical. This change in phase of the material results in a modification of the carrier density and consequently of the conduction properties of the material, for example modification of the surface resistance of the material.
- phase change material can be a chalcogenide of the Gex SeyTez type.
- the material with phase change is for example the binary chalcogenide GeTe. This material has the advantage of having a low electrical resistance in the crystalline state and a high ratio between the resistance in the amorphous state and the resistance in the crystalline state.
- the phase change material By applying an electric field to the material by means of the electrodes, the phase change material can change phase and pass from the crystalline state (electrically conductive) to the amorphous state (electrically insulating) and vice versa.
- the change of phase of the material induced by the application of the electric field, causes a strong modification of the conductivity of the material passing from an insulating state to a conducting state or vice versa.
- the melting temperature At this temperature the material is no longer in a crystalline state and the atoms are randomly arranged.
- the pulse duration is short, the material undergoes almost instantaneous cooling, the atoms remain frozen in a disordered state and the material passes to the amorphous state and the phase change material to the insulating state.
- Vanadium oxide can also be used as a material for vanadium oxide
- switches based on a material whose conductivity is adjustable by varying an electric field within the material without phase change such as, for example, graphene in a semi-configuration conductive A potential difference is then maintained, between the two electrodes attached to a switch, to maintain a switch in the conductive state or a second potential difference, between these two electrodes, is maintained to maintain the switch in the insulating state .
- connection device also comprises a set of electrodes, comprising a first set E1 of electrodes 21 to 26 (shown in solid lines) and a second set E2 of electrodes 31 to 36 (shown in dotted lines), allowing to control the passage from the conductive state to the insulating state of the switches 10, and vice versa.
- Each switch 10 is opposite two electrodes, an electrode 21, 22, 23, 24, 25 or 26 of the first set E1 and an electrode 31, 32, 33, 34, 35 or 36 of the second set E2, arranged so as to allow the switch 10 to pass from the insulating state to the conductive state, and vice versa, under the effect of a variation in the potential difference between the two electrodes inducing a variation of the electric field within the switch 10.
- an element situated opposite another it is meant that these elements are situated on the same axis parallel to the stacking axis z in the planar configuration of the figures.
- Each switch 10 is in direct physical contact with these two switches
- each switch physically connects two vertices S1, S2 of two adjacent conductive pads 5.
- the proposed solution makes it possible to obtain a metasurface device
- reconfigurable It makes it possible to modify the emission diagram and the transfer function of the metasurface antenna, for example microwave, by selectively placing the various switches in the conductive or insulating state.
- the switches 10 are used to connect the conductive pads 5 two by two electrically.
- each switch 10 is disposed opposite an interval 7 and projects beyond two adjacent conductive pads 5.
- the switch 10 physically connects two adjacent conductive pads 5 so as to electrically interconnect these two conductive pads 5 when the switch 10 is in the conductive state and so as to electrically disconnect them from each other when the switch is in the insulating state.
- each switch 10 is disposed opposite an opening 6 between two adjacent conductive pads 5 and extends continuously from one of these two adjacent pads to the other of this adjacent pad.
- Each switch 10 is interposed between an electrode of the first
- the switches 10 belong to the same layer 30 of the stack, called the switch layer 10.
- the switches 10 are separated by one or more blocks of material
- the dielectric 52 so that the switch layer 50 is substantially continuous and planar.
- This material is for example a hydrogen-silsesquioxane or HSQ resin or polymethyl methacrylate (PMMA) or benzocyclobutene (BCB).
- the dielectric material 52 substantially fills the volumes between the switches 10.
- the dielectric material 52 is not shown in [Fig.2] for reasons of clarity.
- the layer 51 comprising the second set of electrodes E2 is a first layer 51 comprising the second set of electrodes E2
- the electrodes of the second set E2 are separated in pairs by one or more blocks of dielectric material 53 so as to obtain a substantially continuous and planar layer.
- This is the same material as in the switch layers 50, but a different material can be used.
- One can for example use the HSQ, the PMMA or the BCB to ensure this separation.
- the selective connection of the conductive pads 5 therebetween allows, for example, to obtain a second metasurface of scale greater than the scale of the metasurface formed by the conductive pads.
- the proposed solution makes it possible to control the main direction of the emission diagram by controlling the law of wave propagation at the metasurface by selectively connecting the conductive pads to each other.
- the switches 10 of the set of switches are aligned along a set of lines Li1,
- conductive pads are also arranged in
- Each row of conductive pads is disposed between two rows of switches and each column of conductive pads is disposed between two columns of switches.
- the switches 10 are arranged in straight lines and in columns in straight lines and the electrodes have straight line shapes.
- the electrodes of the first set are parallel to each other just like the electrodes of the second set.
- the electrodes may have forms of curved lines.
- the switches can also be arranged in lines in curved lines and / or in columns in curved lines so that each line crosses all the columns only once and vice versa, but this implementation is more difficult since the electrodes do not must not pass next to the conductive pads.
- the proposed solution makes it possible to control the main direction of the emission diagram by controlling the law of wave propagation at the level of the metasurface.
- the proposed solution makes it possible to obtain a metasurface device
- reconfigurable such as an electronic scanning antenna which does not require a phase shifter for each conductive patch which makes it possible to propose a device of limited size, mass and cost.
- a set e1 of so-called “active” electrodes e1 are the electrodes which are or have been activated to put, in the conductive state, the switches in contact with a pair of active electrodes.
- the active electrodes are shown in thin lines and the electrodes of a set e2 of non-active electrodes (taken from the electrodes of the first set E1 and of the second set E2) are shown in thick lines.
- switches are not shown in these figures, but are located, as in [Fig.2] to [Fig.5], opposite the openings separating the vertices facing the adjacent electrodes .
- the conductive pads 5 interconnected by the switches in the conductive state are crossed out while the others are
- the connected assemblies 60 to 63 are separated from each other by a set 65 of conductive pads neither connected to each other, nor to the connected assemblies 60 to 63, because they are separated two by two and in contact with switches, at the nonconductive state, themselves in contact with electrodes of the set e2 of non-active electrodes.
- Each switch 100 is arranged so as to individually connect, in its conductive state, one of the conductive pads 5 to a floating ground so that the conductive pads 5 connected to the floating ground are connected to each other. In its insulating state, the switch 100 electrically isolates the conductive pad 5 from the floating mass.
- the switches 100 are of the same type as the switches of the previous figures (variable conductivity by application of an electric field).
- each switch 100 is arranged opposite a single conductive pad 5 so as to connect the conductive pad 5 to a floating mass when the switch is in the conductive state and so as to disconnect the conductive pad 5 from the ground floating when the switch 100 is in the insulating state.
- the switches 100 are connected to the same floating ground.
- a switch 100 when a switch 100 is in the conductive state, it connects, to the floating ground, the conductive pad 5 under which it is located.
- This solution makes it possible to electrically connect the conductive pads together by connecting them to the same floating mass, making the respective switches conductive opposite which they are located.
- These conductive pads 5 then see a greater thickness of conductive material than when the switches opposite which they are located are in the insulating state which results in a modification of the radiation pattern of the antenna and in particular of the radiation frequency of the conductive pads.
- the antenna can be used as a pulse source in a certain frequency as in the radar field. In an intermediate state, only part of the conductive pads 5 is connected to the floating mass.
- each switch 100 is superimposed exactly on the conductive pad 5 opposite which it is located.
- the switch has smaller dimensions than the conductive pad 5 so that the switch 100 does not extend opposite the whole of the conductive pad 5 but only opposite a part of the conductive pad 5.
- the switches 100 are spaced from each other. They do not touch.
- each switch 100 is interposed between an electrode 121, 122, 123, 124 of the first set EE1 (shown in solid lines) and an electrode 131, 132, 133, 134 of the second set EE2 (shown in dotted lines) along the z axis.
- the switch 100 is in direct physical contact with these two electrodes. More specifically, the switches 100 belong to the same layer of switches 150 interposed between the first set of electrodes EE1 and the second set of electrodes EE2.
- the switches 100 are distant from each other. In other words, the switches 100 are not in direct physical contact with one another.
- This material is for example a hydrogen-silsesquioxane or HSQ resin, PMMA or BCB.
- the electrodes of the first set of electrodes EE1 are in contact
- each electrode of the first set of electrodes EE1 is interposed between switches 100 and the respective conductive pads 5, arranged opposite these same switches 100.
- the conductive pad 5 opposite a switch 100 is also in direct physical contact with the electrode of the first set eE1 in direct physical contact with switch 100.
- the electrodes of the second set EE2 are interposed between the layer of switches 150 and the substrate 2.
- the electrodes of the second set of electrodes EE2 are in contact
- the semiconductor material is, for example, of the Si or AsGa type. This makes it possible to connect in order to connect the conductive pads 5 to a floating mass.
- the electrodes of the first set of electrodes EE1 belong to the same layer 101 of the stack interposed between the layer of switches 150 and the metasurface 4.
- the electrodes of the first set of electrodes EE1 belonging to the same layer 101 are advantageously, but not necessarily separated from each other by an insulating material, for example dielectric, so that the layer 101 is substantially planar.
- an insulating material for example dielectric
- the electrodes of the second set of electrodes EE2 belong to the same layer 151 interposed between the layer of switches 150 and the substrate 2. As in the first embodiment, the electrodes of the second set of electrodes EE2 belonging to a single layer 151 are
- a dielectric material 152 for example of the HSQ, PMMA or BCB type, so that the layer 151 is substantially continuous and planar.
- a dielectric material 152 for example of the HSQ, PMMA or BCB type
- FIG.9 there is shown in top view, the conductive pads, the openings 6 and the electrodes 121 to 124 of the first set EE1 of the device of [Fig.7]
- FIG.10 there is shown in bottom view, the electrodes 131 to 134 of the second set EE2 and the layer of switches 150 comprising the switches 10 and the dielectric material 153, of the device of [Fig.7]
- the switches 100 of the set of switches are aligned along a set of lines L1, L2, L3, L4 and according to a set of columns C1, C2, C3, C4, just like the conductive pads 5.
- Each electrode 121, 122, 123, 124 of the first set of electrodes EE1 passes opposite all the switches 100 aligned along one of the lines L1, L2, L3, L4 of the set of lines so as to allow d '' apply a first potential to the switches 100 aligned along this line L1, L2, L3, L4 of the set of lines, each electrode 131, 132, 133, 134 of the second
- set of electrodes EE2 passes opposite all the switches aligned along one of the columns C1, C2, C3, C4 of the set of columns so that the electrode 31, 32, 33, 34 is able to apply a second potential to the switches 10 aligned according to column C1, C2, C3, C4 of the set of columns.
- This arrangement makes it possible to address the various switches collectively, which makes it possible to limit the number of electrodes for ensuring the control of the switches and obtaining the metasurface of higher scale. It is not necessary to have as many pairs of electrodes as there are switches. This characteristic makes it possible to limit the number of connections necessary to ensure this command. The mass and volume of the antenna are thus limited.
- the switches 100 are arranged in straight lines and in columns in straight lines and the electrodes have shapes of straight lines.
- the electrodes of the first set are parallel to each other just as the electrodes of the second set are parallel to each other.
- the electrodes may have forms of curved lines.
- the switches can also be arranged in lines in curved lines and / or in columns in curved lines so that each line crosses all the columns once and vice versa.
- the metasurface device is in a
- the metasurface device can be conformable or have a non-planar configuration in which the layers are curved.
- the two-dimensional structures of a layer are defined according to two curved lines defining this layer.
- each pair of electrodes comprising an electrode of the first set and an electrode of the second set is able to control a single switch.
- the proposed solution makes it possible to obtain a metasurface device
Landscapes
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Prostheses (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1874305A FR3091420B1 (en) | 2018-12-28 | 2018-12-28 | RECONFIGURABLE METASURFACE DEVICE |
PCT/EP2019/085190 WO2020136026A1 (en) | 2018-12-28 | 2019-12-13 | Device with reconfigurable metasurface |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3903384A1 true EP3903384A1 (en) | 2021-11-03 |
EP3903384C0 EP3903384C0 (en) | 2023-11-29 |
EP3903384B1 EP3903384B1 (en) | 2023-11-29 |
Family
ID=66867329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19817351.0A Active EP3903384B1 (en) | 2018-12-28 | 2019-12-13 | Reconfigurable metasurface device |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3903384B1 (en) |
FR (1) | FR3091420B1 (en) |
WO (1) | WO2020136026A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113708074B (en) * | 2021-08-20 | 2023-01-24 | 西安电子科技大学 | Checkerboard type graphene super surface for generating non-coplanar separation wave beams |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2683050B1 (en) * | 1991-10-25 | 1994-03-04 | Commissariat A Energie Atomique | DEVICE WITH SELECTIVE SURFACE IN TUNABLE FREQUENCY. |
US6417807B1 (en) * | 2001-04-27 | 2002-07-09 | Hrl Laboratories, Llc | Optically controlled RF MEMS switch array for reconfigurable broadband reflective antennas |
EP3105819B1 (en) * | 2014-02-14 | 2019-05-08 | HRL Laboratories, LLC | A reconfigurable electromagnetic surface of pixelated metal patches |
US9647331B2 (en) * | 2014-04-15 | 2017-05-09 | The Boeing Company | Configurable antenna assembly |
CN104167577B (en) * | 2014-08-27 | 2016-05-11 | 中国舰船研究设计中心 | A kind of Novel electric tunable FSS structure |
-
2018
- 2018-12-28 FR FR1874305A patent/FR3091420B1/en active Active
-
2019
- 2019-12-13 EP EP19817351.0A patent/EP3903384B1/en active Active
- 2019-12-13 WO PCT/EP2019/085190 patent/WO2020136026A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2020136026A1 (en) | 2020-07-02 |
FR3091420B1 (en) | 2021-01-22 |
EP3903384C0 (en) | 2023-11-29 |
EP3903384B1 (en) | 2023-11-29 |
FR3091420A1 (en) | 2020-07-03 |
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