EP3876281A4 - Light emitting element - Google Patents

Light emitting element Download PDF

Info

Publication number
EP3876281A4
EP3876281A4 EP19878906.7A EP19878906A EP3876281A4 EP 3876281 A4 EP3876281 A4 EP 3876281A4 EP 19878906 A EP19878906 A EP 19878906A EP 3876281 A4 EP3876281 A4 EP 3876281A4
Authority
EP
European Patent Office
Prior art keywords
light emitting
emitting element
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19878906.7A
Other languages
German (de)
French (fr)
Other versions
EP3876281A1 (en
Inventor
Jong Hyeon Chae
Chan Seob SHIN
Seom Geun Lee
Ho Joon Lee
Seong Kyu Jang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of EP3876281A1 publication Critical patent/EP3876281A1/en
Publication of EP3876281A4 publication Critical patent/EP3876281A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
EP19878906.7A 2018-11-02 2019-11-01 Light emitting element Pending EP3876281A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862754721P 2018-11-02 2018-11-02
US16/666,626 US11621253B2 (en) 2018-11-02 2019-10-29 Light emitting device
PCT/KR2019/014688 WO2020091495A1 (en) 2018-11-02 2019-11-01 Light emitting element

Publications (2)

Publication Number Publication Date
EP3876281A1 EP3876281A1 (en) 2021-09-08
EP3876281A4 true EP3876281A4 (en) 2022-07-20

Family

ID=70457890

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19878906.7A Pending EP3876281A4 (en) 2018-11-02 2019-11-01 Light emitting element

Country Status (7)

Country Link
US (1) US11621253B2 (en)
EP (1) EP3876281A4 (en)
JP (1) JP7451513B2 (en)
KR (1) KR20210072006A (en)
CN (2) CN112970120A (en)
BR (1) BR112021008493A2 (en)
WO (1) WO2020091495A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11621253B2 (en) * 2018-11-02 2023-04-04 Seoul Viosys Co., Ltd. Light emitting device
EP3671812B1 (en) * 2018-12-19 2022-02-09 IMEC vzw A method for bonding and interconnecting semiconductor chips
WO2024049061A1 (en) * 2022-08-31 2024-03-07 서울바이오시스주식회사 Pixel element, and display device comprising same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183576A (en) * 1993-12-24 1995-07-21 Nichia Chem Ind Ltd Gallium nitride-based compound semiconductor light-emitting element
EP3163615A1 (en) * 2014-06-27 2017-05-03 LG Innotek Co., Ltd. Light emitting device
WO2017153123A1 (en) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
US20170288093A1 (en) * 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548956B2 (en) * 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
JP3486900B2 (en) * 2000-02-15 2004-01-13 ソニー株式会社 Light emitting device and optical device using the same
JP2002118331A (en) * 2000-10-06 2002-04-19 Toshiba Corp Laminated semiconductor light emitting device and its manufacturing method
TW522534B (en) * 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
US7745986B2 (en) * 2004-02-09 2010-06-29 Universal Display Corporation Transflective display having full color OLED blacklight
JP4544892B2 (en) * 2004-03-30 2010-09-15 三洋電機株式会社 Semiconductor laser device and manufacturing method thereof
JP4660224B2 (en) * 2004-03-30 2011-03-30 三洋電機株式会社 Semiconductor laser device
US8017955B2 (en) * 2004-11-19 2011-09-13 Koninklijke Philips Electronics N.V. Composite LED modules
JP3115042U (en) 2005-07-22 2005-11-04 東貝光電科技股▲ふん▼有限公司 Light emitting diode structure
US20070018189A1 (en) * 2005-07-22 2007-01-25 Unity Opto Technology Co., Ltd. Light emitting diode
KR101209040B1 (en) 2005-11-18 2012-12-06 삼성디스플레이 주식회사 Organic light emitting diode display
KR100727472B1 (en) 2006-10-17 2007-06-13 (주)에피플러스 Light emitting diode and method for forming thereof
JP4930322B2 (en) * 2006-11-10 2012-05-16 ソニー株式会社 Semiconductor light emitting device, optical pickup device, and information recording / reproducing device
KR20090010623A (en) 2007-07-24 2009-01-30 삼성전기주식회사 Light emitting diode device
JP2009152297A (en) * 2007-12-19 2009-07-09 Rohm Co Ltd Semiconductor light-emitting device
KR101332794B1 (en) * 2008-08-05 2013-11-25 삼성전자주식회사 Light emitting device, light emitting system comprising the same, and fabricating method of the light emitting device and the light emitting system
JP2011176045A (en) 2010-02-23 2011-09-08 Fujifilm Corp Laminated type semiconductor light-emitting element
JP5333382B2 (en) * 2010-08-27 2013-11-06 豊田合成株式会社 Light emitting element
JP2015012044A (en) * 2013-06-26 2015-01-19 株式会社東芝 Semiconductor light-emitting element
FR3019380B1 (en) 2014-04-01 2017-09-01 Centre Nat Rech Scient PIXEL SEMICONDUCTOR, MATRIX OF SUCH PIXELS, SEMICONDUCTOR STRUCTURE FOR CARRYING OUT SUCH PIXELS AND METHODS OF MAKING SAME
CN105244364A (en) 2014-07-10 2016-01-13 上海和辉光电有限公司 Organic light emitting device and pixel array
US20160163940A1 (en) * 2014-12-05 2016-06-09 Industrial Technology Research Institute Package structure for light emitting device
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
US10998478B2 (en) * 2015-08-18 2021-05-04 Lg Innotek Co., Ltd. Light-emitting element, light-emitting element package comprising light-emitting element, and light-emitting device comprising light-emitting element package
KR102406606B1 (en) * 2015-10-08 2022-06-09 삼성디스플레이 주식회사 Organic light emitting device, organic light emitting display device having the same and fabricating method of the same
US11621253B2 (en) * 2018-11-02 2023-04-04 Seoul Viosys Co., Ltd. Light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183576A (en) * 1993-12-24 1995-07-21 Nichia Chem Ind Ltd Gallium nitride-based compound semiconductor light-emitting element
EP3163615A1 (en) * 2014-06-27 2017-05-03 LG Innotek Co., Ltd. Light emitting device
WO2017153123A1 (en) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Optoelectronic component and method for producing an optoelectronic component
US20170288093A1 (en) * 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2020091495A1 *

Also Published As

Publication number Publication date
JP7451513B2 (en) 2024-03-18
CN112970120A (en) 2021-06-15
WO2020091495A1 (en) 2020-05-07
US11621253B2 (en) 2023-04-04
CN210866228U (en) 2020-06-26
EP3876281A1 (en) 2021-09-08
JP2022505619A (en) 2022-01-14
US20200144232A1 (en) 2020-05-07
BR112021008493A2 (en) 2021-08-03
KR20210072006A (en) 2021-06-16

Similar Documents

Publication Publication Date Title
EP3595025A4 (en) Organic light emitting element
EP3454372A4 (en) Light emitting diode
EP3570658A4 (en) Light emitting structures
EP3882990A4 (en) Light emitting element
EP3439062A4 (en) Organic light emitting element
EP3840067A4 (en) Light-emitting element
EP3477720A4 (en) Organic light emitting element
EP3879576A4 (en) Light emitting element
EP3413359A4 (en) Ultraviolet light emitting element
EP3680945A4 (en) Light emitting element
EP3522240A4 (en) Light emitting element
EP3428697A4 (en) Light emitting device
EP3779264A4 (en) Light emitting apparatus
EP3879586A4 (en) Light-emitting element
EP3852153A4 (en) Light-emitting element
EP3864343A4 (en) Light module
EP3692298A4 (en) Task-area light
EP3797322A4 (en) Improved light distribution element
EP3613261A4 (en) Light emitting diode light system
EP3767385A4 (en) Gaschromic light control element
EP3876281A4 (en) Light emitting element
EP3689722A4 (en) Combination light
EP3872882A4 (en) Light-emitting element
EP3780302A4 (en) Semiconductor light emitting element
EP3664174A4 (en) Film for light emitting element, and light emitting element using said film for light emitting element

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20210602

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20220622

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 25/075 20060101ALI20220615BHEP

Ipc: H01L 33/62 20100101ALI20220615BHEP

Ipc: H01L 33/38 20100101ALI20220615BHEP

Ipc: H01L 33/24 20100101ALI20220615BHEP

Ipc: H01L 27/15 20060101AFI20220615BHEP