EP3860115A4 - Solid-state imaging element, solid-state imaging element control method, and electronic apparatus - Google Patents

Solid-state imaging element, solid-state imaging element control method, and electronic apparatus Download PDF

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Publication number
EP3860115A4
EP3860115A4 EP19864558.2A EP19864558A EP3860115A4 EP 3860115 A4 EP3860115 A4 EP 3860115A4 EP 19864558 A EP19864558 A EP 19864558A EP 3860115 A4 EP3860115 A4 EP 3860115A4
Authority
EP
European Patent Office
Prior art keywords
solid
state imaging
imaging element
control method
electronic apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19864558.2A
Other languages
German (de)
French (fr)
Other versions
EP3860115A1 (en
Inventor
Kazuki Hizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of EP3860115A1 publication Critical patent/EP3860115A1/en
Publication of EP3860115A4 publication Critical patent/EP3860115A4/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
EP19864558.2A 2018-09-28 2019-08-28 Solid-state imaging element, solid-state imaging element control method, and electronic apparatus Pending EP3860115A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018186127A JP2022002355A (en) 2018-09-28 2018-09-28 Solid state image sensor, control method for solid state image sensor and electronic apparatus
PCT/JP2019/033616 WO2020066433A1 (en) 2018-09-28 2019-08-28 Solid-state imaging element, solid-state imaging element control method, and electronic apparatus

Publications (2)

Publication Number Publication Date
EP3860115A1 EP3860115A1 (en) 2021-08-04
EP3860115A4 true EP3860115A4 (en) 2021-11-24

Family

ID=69951846

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19864558.2A Pending EP3860115A4 (en) 2018-09-28 2019-08-28 Solid-state imaging element, solid-state imaging element control method, and electronic apparatus

Country Status (6)

Country Link
US (1) US11553151B2 (en)
EP (1) EP3860115A4 (en)
JP (1) JP2022002355A (en)
KR (1) KR20210069627A (en)
CN (1) CN112740661A (en)
WO (1) WO2020066433A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021048554A (en) * 2019-09-20 2021-03-25 ソニーセミコンダクタソリューションズ株式会社 Imaging apparatus, imaging control method, and program
JPWO2021261069A1 (en) * 2020-06-26 2021-12-30
DE112021004820T5 (en) * 2020-09-16 2023-07-27 Sony Group Corporation SOLID STATE IMAGING DEVICE AND DETECTION SYSTEM
WO2023281724A1 (en) * 2021-07-08 2023-01-12 キヤノン株式会社 Imaging element, imaging device, monitoring device, and method for controlling imaging element
JP2023081054A (en) * 2021-11-30 2023-06-09 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device, signal processing method, and program
WO2024062842A1 (en) * 2022-09-21 2024-03-28 ソニーセミコンダクタソリューションズ株式会社 Solid-state imaging device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181627A1 (en) * 2005-01-06 2006-08-17 Recon/Optical, Inc. Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
US20160156862A1 (en) * 2013-07-22 2016-06-02 Sony Corporation Solid-state image pickup device and electronic apparatus
WO2017073322A1 (en) * 2015-10-26 2017-05-04 Sony Semiconductor Solutions Corporation Image pick-up apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102054774B1 (en) 2013-09-10 2019-12-11 삼성전자주식회사 Image device including dynamic vision sensor, ambient light sensor, and proximity sensor
JP6577700B2 (en) * 2014-06-30 2019-09-18 キヤノン株式会社 Radiation detection apparatus, control method therefor, radiation imaging apparatus, and program
US9986179B2 (en) 2014-09-30 2018-05-29 Qualcomm Incorporated Sensor architecture using frame-based and event-based hybrid scheme
JP2016092661A (en) * 2014-11-07 2016-05-23 ソニー株式会社 Imaging device, driving method, and electronic apparatus
JP6984417B2 (en) * 2015-12-16 2021-12-22 ソニーグループ株式会社 Image sensor and drive method, as well as electronic equipment
KR102612194B1 (en) * 2016-12-14 2023-12-11 삼성전자주식회사 Event-based sensor and sensing method
JP6696695B2 (en) * 2017-03-16 2020-05-20 株式会社東芝 Photodetector and subject detection system using the same
US11140349B2 (en) * 2018-09-07 2021-10-05 Samsung Electronics Co., Ltd. Image sensor incuding CMOS image sensor pixel and dynamic vision sensor pixel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181627A1 (en) * 2005-01-06 2006-08-17 Recon/Optical, Inc. Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
US20160156862A1 (en) * 2013-07-22 2016-06-02 Sony Corporation Solid-state image pickup device and electronic apparatus
WO2017073322A1 (en) * 2015-10-26 2017-05-04 Sony Semiconductor Solutions Corporation Image pick-up apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JUAN ANTONIO LENERO-BARDALLO ET AL: "A 3.6 $\mu$s Latency Asynchronous Frame-Free Event-Driven Dynamic-Vision-Sensor", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 46, no. 6, 1 June 2011 (2011-06-01), USA, pages 1443 - 1455, XP055556546, ISSN: 0018-9200, DOI: 10.1109/JSSC.2011.2118490 *
See also references of WO2020066433A1 *

Also Published As

Publication number Publication date
EP3860115A1 (en) 2021-08-04
JP2022002355A (en) 2022-01-06
CN112740661A (en) 2021-04-30
WO2020066433A1 (en) 2020-04-02
KR20210069627A (en) 2021-06-11
US20220030190A1 (en) 2022-01-27
US11553151B2 (en) 2023-01-10

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