EP3771094A3 - Power amplifier with shielded transmission lines - Google Patents

Power amplifier with shielded transmission lines Download PDF

Info

Publication number
EP3771094A3
EP3771094A3 EP20184200.2A EP20184200A EP3771094A3 EP 3771094 A3 EP3771094 A3 EP 3771094A3 EP 20184200 A EP20184200 A EP 20184200A EP 3771094 A3 EP3771094 A3 EP 3771094A3
Authority
EP
European Patent Office
Prior art keywords
power amplifier
transmission lines
transmission line
line assembly
phase shifter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20184200.2A
Other languages
German (de)
French (fr)
Other versions
EP3771094A2 (en
Inventor
Ning Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Publication of EP3771094A2 publication Critical patent/EP3771094A2/en
Publication of EP3771094A3 publication Critical patent/EP3771094A3/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • H01P3/082—Multilayer dielectric
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Abstract

A power amplifier module includes a first phase shifter, a second phase shifter, and an electromagnetic shield. The first phase shifter includes a first transmission line assembly to shift a first amplified signal by a first phase angle. The second phase shifter includes a second transmission line assembly to shift a second amplified signal by a second phase angle. The electromagnetic shield is arranged to shield the first transmission line assembly from the second transmission line assembly. The power amplifier module may have, for example, Doherty amplifier configuration.
EP20184200.2A 2019-07-12 2020-07-06 Power amplifier with shielded transmission lines Pending EP3771094A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16/510,604 US11011813B2 (en) 2019-07-12 2019-07-12 Power amplifier with shielded transmission lines

Publications (2)

Publication Number Publication Date
EP3771094A2 EP3771094A2 (en) 2021-01-27
EP3771094A3 true EP3771094A3 (en) 2021-06-23

Family

ID=71515054

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20184200.2A Pending EP3771094A3 (en) 2019-07-12 2020-07-06 Power amplifier with shielded transmission lines

Country Status (3)

Country Link
US (1) US11011813B2 (en)
EP (1) EP3771094A3 (en)
CN (1) CN112217484A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11233483B2 (en) 2017-02-02 2022-01-25 Macom Technology Solutions Holdings, Inc. 90-degree lumped and distributed Doherty impedance inverter
WO2018197917A1 (en) 2017-04-24 2018-11-01 Macom Technology Solutions Holdings, Inc. Inverted doherty power amplifier with large rf fractional and instantaneous bandwiths
EP3616320B1 (en) * 2017-04-24 2023-11-08 MACOM Technology Solutions Holdings, Inc. Inverted doherty power amplifier with large rf and instantaneous bandwidths
CN110785927B (en) 2017-04-24 2024-03-08 麦克姆技术解决方案控股有限公司 Symmetrical doherty power amplifier with improved efficiency
CN111480292B (en) 2017-10-02 2024-03-29 镁可微波技术有限公司 No-load modulation high-efficiency power amplifier
WO2020072898A1 (en) 2018-10-05 2020-04-09 Macom Technology Solutions Holdings, Inc. Low-load-modulation power amplifier
WO2021137951A1 (en) 2019-12-30 2021-07-08 Macom Technology Solutions Holdings, Inc. Low-load-modulation broadband amplifier

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583318A (en) * 1993-12-30 1996-12-10 Lucent Technologies Inc. Multi-layer shield for absorption of electromagnetic energy
US20070109709A1 (en) * 2003-12-22 2007-05-17 David Anthony Internally shielded energy conditioner
US20120236528A1 (en) * 2009-12-02 2012-09-20 Le John D Multilayer emi shielding thin film with high rf permeability
JP2013085179A (en) * 2011-10-12 2013-05-09 Toshiba Corp Power amplification circuit and radio communication apparatus
EP2806557A1 (en) * 2013-05-23 2014-11-26 Nxp B.V. Doherty amplifier
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US20160226450A1 (en) * 2015-01-30 2016-08-04 Mitsubishi Electric Research Laboratories, Inc. Three-Way Sequential Power Amplifier System for Wideband RF Signal
US20180013391A1 (en) * 2016-05-17 2018-01-11 Nxp Usa, Inc. Multiple-path rf amplifiers with angularly offset signal path directions, and methods of manufacture thereof
US20180131329A1 (en) * 2016-11-04 2018-05-10 Nxp Usa, Inc. Amplifier devices with back-off power optimization

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568086A (en) * 1995-05-25 1996-10-22 Motorola, Inc. Linear power amplifier for high efficiency multi-carrier performance
WO2009031042A2 (en) * 2007-04-23 2009-03-12 Dali Systems, Co., Ltd. N-way doherty distributed power amplifier
US8890302B2 (en) 2012-06-29 2014-11-18 Intel Corporation Hybrid package transmission line circuits
US9312817B2 (en) * 2012-07-20 2016-04-12 Freescale Semiconductor, Inc. Semiconductor package design providing reduced electromagnetic coupling between circuit components
US9401342B2 (en) * 2013-06-27 2016-07-26 Freescale Semiconductor, Inc. Semiconductor package having wire bond wall to reduce coupling
US9450547B2 (en) * 2013-12-12 2016-09-20 Freescale Semiconductor, Inc. Semiconductor package having an isolation wall to reduce electromagnetic coupling
US9607953B1 (en) * 2016-02-24 2017-03-28 Nxp Usa, Inc. Semiconductor package with isolation wall
US10284147B2 (en) 2016-12-15 2019-05-07 Nxp Usa, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583318A (en) * 1993-12-30 1996-12-10 Lucent Technologies Inc. Multi-layer shield for absorption of electromagnetic energy
US20070109709A1 (en) * 2003-12-22 2007-05-17 David Anthony Internally shielded energy conditioner
US20120236528A1 (en) * 2009-12-02 2012-09-20 Le John D Multilayer emi shielding thin film with high rf permeability
JP2013085179A (en) * 2011-10-12 2013-05-09 Toshiba Corp Power amplification circuit and radio communication apparatus
EP2806557A1 (en) * 2013-05-23 2014-11-26 Nxp B.V. Doherty amplifier
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US20160226450A1 (en) * 2015-01-30 2016-08-04 Mitsubishi Electric Research Laboratories, Inc. Three-Way Sequential Power Amplifier System for Wideband RF Signal
US20180013391A1 (en) * 2016-05-17 2018-01-11 Nxp Usa, Inc. Multiple-path rf amplifiers with angularly offset signal path directions, and methods of manufacture thereof
US20180131329A1 (en) * 2016-11-04 2018-05-10 Nxp Usa, Inc. Amplifier devices with back-off power optimization

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HETTAK K ET AL: "A new compact 3D SiGe 90° hybrid coupler using the meandering TFMS and shielded strip line at 20 GHz", MICROWAVE CONFERENCE, 2009. EUMC 2009. EUROPEAN, IEEE, PISCATAWAY, NJ, USA, 29 September 2009 (2009-09-29), pages 1663 - 1666, XP031670003, ISBN: 978-1-4244-4748-0 *
LV GUANSHENG ET AL: "A Compact Ka/Q Dual-Band GaAs MMIC Doherty Power Amplifier With Simplified Offset Lines for 5G Applications", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, PLENUM, USA, vol. 67, no. 7, 1 July 2019 (2019-07-01), pages 3110 - 3121, XP011732518, ISSN: 0018-9480, [retrieved on 20190628], DOI: 10.1109/TMTT.2019.2908103 *
WATANABE ATOM O ET AL: "Multilayered Electromagnetic Interference Shielding Structures for Suppressing Magnetic Field Coupling", JOURNAL OF ELECTRONIC MATERIALS, WARRENDALE , PA, US, vol. 47, no. 9, 31 May 2018 (2018-05-31), pages 5243 - 5250, XP036556255, ISSN: 0361-5235, [retrieved on 20180531], DOI: 10.1007/S11664-018-6387-2 *

Also Published As

Publication number Publication date
CN112217484A (en) 2021-01-12
US11011813B2 (en) 2021-05-18
EP3771094A2 (en) 2021-01-27
US20210013572A1 (en) 2021-01-14

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