EP3659181A1 - Metal-based transistor comprising materials comprising at least one group iii element and one group v element - Google Patents
Metal-based transistor comprising materials comprising at least one group iii element and one group v elementInfo
- Publication number
- EP3659181A1 EP3659181A1 EP18742820.6A EP18742820A EP3659181A1 EP 3659181 A1 EP3659181 A1 EP 3659181A1 EP 18742820 A EP18742820 A EP 18742820A EP 3659181 A1 EP3659181 A1 EP 3659181A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- collector
- semiconductor material
- metal
- transistor
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 title claims abstract description 48
- 229910021478 group 5 element Inorganic materials 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000007769 metal material Substances 0.000 claims abstract description 9
- 238000005036 potential barrier Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 238000011084 recovery Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 abstract description 8
- 229910002601 GaN Inorganic materials 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910019001 CoSi Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910001199 N alloy Inorganic materials 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000037074 physically active Effects 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66931—BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT]
- H01L29/66939—BJT-like unipolar transistors, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistor [RTT], bulk barrier transistor [BBT], planar doped barrier transistor [PDBT], charge injection transistor [CHINT] with an active layer made of a group 13/15 material
Definitions
- Metal-based transistor comprising materials comprising at least one element III and one element V
- the field of the invention is that of microwave components, aimed at producing microwave components that can reach cutoff frequencies up to THz.
- High Electron Mobility Transistor High Electron Mobility Transistor
- heterojunction bipolar transistors TH
- TBH heterojunction bipolar transistors
- MOCVD organometallic
- molecular jets ammonia. Indeed atomic hydrogen from the dissociation of the molecules allowing the growth of the GaN crystal associates with the doping atoms and prevents the electrical activation of the dopants. Electrical reactivation procedures are possible using thermal annealing but the thermal budget can be a factor of degradation of the quality of the heterostructures.
- the acceptor level is approximately 200 meV above the GaN valence band, which leads, even if the hydrogen removal stage operates correctly, to a weak electrical activation of the Mg dopants.
- the solubility limits of the dopants prevent exceeding unlimited concentrations, some 10 19 cm -3 for the Mg for example, the effective dopings are therefore close to 10 17 cm -3 leading to very high layer resistances (about 100 of kQ per square for thicknesses of 50 nm). These values are incompatible with a microwave operation since they would have to be much lower than the typical k ⁇ .
- the solid state components are essentially InP or Si (Ge) that allow operation up to 350GHz in the laboratory but for very low powers emitted. Solutions based on diodes exist but are difficult to adjust and historically difficult to integrate.
- the Applicant proposes a new power transistor based on materials III-V, with a vertical structure (weak surface effect), unipolar (for electrons to participate in electrical conduction), comprising a transmitter, a base and a collector, in which the base is metallic.
- the metal base is inserted into alloys of III-V materials, such as GaN alloys.
- the subject of the present invention is a transistor comprising a vertical structure comprising an emitter, a base, a collector characterized in that it comprises:
- a sub-collector comprising at least one layer made of a first semiconductor material comprising at least one element III and an n-doped element V with a first doping level;
- a collector comprising at least one layer made of a second semiconductor material comprising at least one element III and an n-doped element V with at least one second doping level, said at least one second doping level being lower than said first doping level;
- an emitter comprising at least one layer made of a third semiconductor material comprising at least one element III and an n-doped element V;
- a continuous metal base layer situated between the collector and the emitter and having a thinner thickness than the average ballistic path of the electrons in this metal, said metal base layer forming the base of the transistor and comprising a metallic material comprising minus the element N;
- the potential barrier ( ⁇ ⁇ ⁇ ) at the metallic material / third semiconductor material interface of the emitter is greater than the potential barrier ( ⁇ ) at the metallic material / semiconductor second material interface of the collector.
- the first and / or the second and / or the third semiconductor material is (are) an alloy of ln- x- y Al x Ga y N.
- the collector comprises at least one layer made of a second semiconductor material III-V ⁇ - ⁇ - ⁇ ⁇ . yAlx'Gay'N doped n with at least one second doping level, said at least one second doping level being lower than said first doping level and wherein the emitter comprises at least one layer made of a third semiconductor material III-V ln -xy AlxGa y N doped n.
- the first and / or the second and / or the third semiconductor material is (are) chosen from ScAIN or ScGaN.
- the collector may comprise different doping levels, or even within a layer.
- metal-based transistors can have cutoff frequencies exceeding the THz with high operating voltages (exceeding ten volts for such cutoff frequencies).
- the first semiconductor material of the sub-collector is GaN
- the second semiconductor material of the collector is GaN
- the third semiconductor material of the emitter is in or in ln 0, i 7 AI 0.83 or in
- the bandgap of the transmitter is greater than that of the base.
- the conduction band of the collector must ensure the absence of discontinuity unfavorable with that of the base (type 2 alignment, that is to say to avoid that a potential barrier is to be crossed by the electrons injected between the base and the collector) resulting in losses to the collection.
- the sub-collector and / or the collector and / or the emitter comprises (ennent) a multilayer structure or a gradual structure, allowing more favorable access or collection resistances.
- the base layer may advantageously comprise a metal having a crystalline mesh compatible with the alloys of gallium nitride chosen from and not exclusively: Nb 2 N, CrN, MoN, TaN.
- the metal base of the transistor of the invention is thus inserted into alloys of materials III-V, which requires that the selected metal compound be compatible with the epitaxial temperatures of said III-V materials and offers a compatible crystalline structure.
- the metal compounds based on nitride alloy offer for this reason a very good compatibility.
- the metal layer has a thickness less than or equal to 30 nanometers and preferably less than or equal to 10 nanometers.
- the transistor comprises at least one base recovery contact on the surface of the metal layer and at least one collector resumption contact on the surface of the sub-collector.
- At least the base-return contact on the surface of the metal layer and at least the collector-return contact on the surface of the sub-collector comprise a Ti layer and / or a substrate layer.
- the substrate is SiC or GaN or Si.
- the first n-type doping rate of the first semiconductor material belonging to the sub-collector is greater than or equal to 10 18 cm -3 .
- the second doping rate of the second semiconductor material belonging to the collector is of the order of 10 17 cm -3 , making it possible to reverse the appearance of the Kirk effect.
- parasitic effect of the transistor which consists in widening of the base area to the detriment of the collector area as a result of a high density of majority carrier injected from the base to the collector This effect is encountered in the normal operating mode of the transistor, at the collector base junction in reverse polarization, at a carrier injection threshold greater than the doping of the collector zone, a gradual erasure of the space charge area between the base and the collector is observed. widening of the base area thus leads to a decrease in the microwave gain of the transistor.
- FIG. 1 illustrates the conduction band diagram of a Si / CoSi 2 / Si metal-base transistor of the prior art
- FIG. 2 illustrates the block diagram of the conduction bands in a metal-based transistor based on
- FIG. 3 illustrates the evolution of the Schottky barrier height of nickel deposited on Al x Ga-i- x N alloys described in the literature
- FIG. 4 illustrates a sectional view of a metal-based transistor according to the invention.
- the transistor of the present invention takes advantage and high breakdown fields alloys of III-V materials such as ln xy AlxGa alloys are N and avoids surface effects difficult to control. It only uses majority carriers avoiding the catastrophic degradation effects specific to ambipolar components (TBH for Bipolar Strand to Heterojunction or HBT for "Heterojunction Bipolar Transistor", Laser) and is free from p-doping which has poor electrical conductivity, especially in high bandgap materials because of the intrinsic motility of the holes and the passivation effects of the hydrogen-bound dopants.
- TH Bipolar Strand to Heterojunction
- HBT Heterojunction Bipolar Transistor
- the metal base also avoids difficult ohmic contacting by using simple metal-metal junctions which have negligible contact resistances ( ⁇ . ⁇ instead of values between 0.1 ⁇ .mm and 1 Q.mm).
- the speed of the component is essentially fixed by the thickness of the epitaxial layers and not by the lateral dimension of patterns such as the gate in a field effect transistor. This makes it possible to reach microwave gain cut-off frequencies above 100 GHz by using size patterns greater than 500 nm allowing the use of optical l-line or even G-line optical steppers and not electronic masks. Steppers have the advantage of allowing much shorter exposure times than electronic masks, the difference being between minutes and hours.
- the solution of the present invention makes it possible to increase by an order of magnitude the available power densities. Even at lower frequencies, the present solution is of interest for the components based on ln -xy AlxGayN by greatly limiting the impact of surface phenomena (charges) and volume traps. It allows the improvement of low frequency noise and dispersive effects specific to planar components.
- the transistors of the present invention are said to be "Normally-off" (blocked if no voltages applied to the base). Due to this polarization mode, the power supply of the circuits may only include positive voltages, whereas the conventional HEMT solution requires two positive (drain) and negative (gate) power supplies. Being vertical, the components of the present invention avoid the surface effects encountered by current HEMT components.
- the transistors of the present invention are unipolar components that are less sensitive to catastrophic damage to conventional TBHs or lasers that are ambipolar.
- the metal layer simplifies the setting of the ohmic contacts on the base layer.
- the series resistances at the basic (or gate) control are a very sensitive point for the frequency rise of the components.
- the invention proposes to use the alloys of III-V materials such as ln xy AlxGayN alloys for making transistors metal base.
- III-V materials such as ln xy AlxGayN alloys for making transistors metal base.
- the alloys used of III-V materials such as GaN make it possible to produce asymmetric Schottky barriers ensuring the emission and collection of carriers.
- alloys of materials III-V it is possible to find metals having a good morphology even for thin, compatible such materials III-V.
- films of Nb 2 N in particular described in the article by David Meyer, Naval Research Laboratory, "Epitaxial Conductors: Metal Transition Nitride Development at NRL", WOCSEMMAD 2016, Arlington, AZ, USA and have a good morphology even for low thicknesses.
- These metal films have layer resistances of the order of 4 ohms per square for a thickness of 10 nm.
- Cutoff frequencies could be twice that of InP or SiGe TBHs, and the power density would be an order of magnitude larger.
- FIG. 2 illustrates, by way of example, a band diagram of a device according to the invention, comprising an emitter in ln 0, -i 7 AI 0.83 GaN, a base in Nb 2 N and a collector in GaN , highlighting that the potential barrier ⁇ ⁇ ⁇ at the metal / third semiconductor interface (corresponding to the base / emitter barrier) is greater than the potential barrier ⁇ ⁇ ⁇ at the metal / second semiconductor semiconductor interface (corresponding to the base / collector barrier).
- the arrows schematize the path of the electrons injected from the transmitter to the collector.
- the first and / or second and / or third semiconductor material is (are) an alloy of In xy AlxGayN.
- FIG. 3 shows, by way of example, the evolution of the Schottky barrier height with Al x Ga-i- x N alloys as a function of the concentration of aluminum for a Ni metal contact as described in the article: " Dependence of Ni / AIGaN Schottky barrier height on Al mole fraction ", Qiao Q, LS Yu, Lau SS, Redwing JM, JY Lin, and Jiang HX, Journal of Applied Physics 87, 801 (2000); doi: 10.1063 / 1 .371944.
- the emitter layer must have an aluminum concentration higher than that of the collector layer.
- the choice of metals best suited to the metal-based transistor structure of the invention if the use of III-V materials such as GaN alloys allows energy band engineering and collection much easier than for silicon components, it is necessary to obtain compatible metals GaN growth temperatures and having the good crystallinity allowing more precisely to obtain a heterostructure may be: I n - ⁇ X-YAI G y N / M cal / 1 1. No x - y Al x - N Gay.
- alloys Nb 2 N offer this type of physical properties with a mesh of 1% with SiC and therefore a compatibility with the crystalline mesh of GaN also.
- the Nb element has a high melting point of 2477 ° C.
- Thick Nb 2 N layers of 100 nm thickness currently have a layer resistance of 3.9 ohms per square. Very high 3.45eV barrier heights were measured with ⁇ .
- Other materials are also possible candidates such as: ScGaN, ScAIN, CrN, MoN, TaN.
- the electrons injected into the base pass through it in a ballistic manner. Only electrons that do not experience a collision can be collected.
- the free ballistic range in a metal has been studied for some metals. For CoSi 2 , it reaches 9nm, for Ag 27nm, for Au 22nm, for Pd 9nm and for Al 10nm.
- the construction rules of the components are similar to those of the TBH components except that the ohmic metal base contact is a metal / metal contact.
- FIG. 4 shows the diagram of a sectional view of an example of a transistor according to the invention:
- the metal-based transistor of the invention comprises: a substrate 100;
- a sub-collector 200 a collector 300;
- At least one collector contact 310 At least one collector contact 310
- the transistor structure of the present invention remains compatible thermal management solutions described in particular in the patent application EP 1276149 (Thomson-CSF, "semiconductor component with integrated heat sink", S. Delage, S. Cassette, H Blanck, E. Chartier, (1995), 95 08994, or the published French patent application 2,737,342, making it possible to envisage applications in the S or X band.
- the Applicant has carried out analytical calculations to evaluate the electrical performance of a metal-based transistor compared to those of a state-of-the-art heterojunction bipolar transistor and provided in the article by Zach Griffith, Kim YoungMin, Mattias Dahlstrom, Arthur C.
- the metal-based transistor has dimensions of 0.5 ⁇ x 7 ⁇ GaN identical to those of the THB InP transistor, with a metal base of Nb 2 N 3.5nm thick and the average free ballistic path is set at 20nm.
- Table 1 shows the values of the key parameters of the transistors. The parameters have been estimated on the basis of physical values available in the scientific literature and highlights the improvement in electrical performance expected with the metal-based transistor of the invention. It is important to mention that power gain cut-off frequencies greater than 1 THz would be accessible by increasing the thickness of the metal base to 6 nm, all other parameters being unchanged. The average free ballistic trajectory of the electrons injected into the metal base governs the current gain of the component and in the example given the gain in current would drop to 3.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1700798A FR3069704B1 (en) | 2017-07-27 | 2017-07-27 | METALLIC TRANSISTOR COMPRISING III-V MATERIALS |
PCT/EP2018/070274 WO2019020737A1 (en) | 2017-07-27 | 2018-07-26 | Metal-based transistor comprising materials comprising at least one group iii element and one group v element. |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3659181A1 true EP3659181A1 (en) | 2020-06-03 |
Family
ID=60450693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18742820.6A Pending EP3659181A1 (en) | 2017-07-27 | 2018-07-26 | Metal-based transistor comprising materials comprising at least one group iii element and one group v element |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3659181A1 (en) |
FR (1) | FR3069704B1 (en) |
WO (1) | WO2019020737A1 (en) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2737342B1 (en) | 1995-07-25 | 1997-08-22 | Thomson Csf | SEMICONDUCTOR COMPONENT WITH INTEGRATED THERMAL DISSIPATOR |
JP3392788B2 (en) * | 1999-08-19 | 2003-03-31 | シャープ株式会社 | Semiconductor device |
FR2827424B1 (en) | 2001-07-13 | 2005-02-18 | Thales Sa | ENCAPSULE ELECTRONIC COMPONENT COMPRISING AN ELECTRONIC POWER DEVICE AND METHOD OF MANUFACTURE |
US20050067629A1 (en) * | 2003-01-13 | 2005-03-31 | Woodall Jerry M. | Semimetal semiconductor |
JP2006210462A (en) * | 2005-01-26 | 2006-08-10 | Hitachi Ltd | Metal base transistor and oscillator using it |
WO2014039550A1 (en) * | 2012-09-04 | 2014-03-13 | Carnegie Mellon University | A hot-electron transistor having metal terminals |
US9236432B2 (en) * | 2013-03-20 | 2016-01-12 | The United States Of America, As Represented By The Secretary Of The Navy | Graphene base transistor with reduced collector area |
-
2017
- 2017-07-27 FR FR1700798A patent/FR3069704B1/en active Active
-
2018
- 2018-07-26 EP EP18742820.6A patent/EP3659181A1/en active Pending
- 2018-07-26 WO PCT/EP2018/070274 patent/WO2019020737A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FR3069704A1 (en) | 2019-02-01 |
WO2019020737A1 (en) | 2019-01-31 |
FR3069704B1 (en) | 2019-09-20 |
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