EP3657186A4 - Rf power device capable of monitoring temperature and rf characteristics at wafer level - Google Patents

Rf power device capable of monitoring temperature and rf characteristics at wafer level Download PDF

Info

Publication number
EP3657186A4
EP3657186A4 EP17910488.0A EP17910488A EP3657186A4 EP 3657186 A4 EP3657186 A4 EP 3657186A4 EP 17910488 A EP17910488 A EP 17910488A EP 3657186 A4 EP3657186 A4 EP 3657186A4
Authority
EP
European Patent Office
Prior art keywords
device capable
power device
wafer level
monitoring temperature
monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17910488.0A
Other languages
German (de)
French (fr)
Other versions
EP3657186A1 (en
EP3657186C0 (en
EP3657186B1 (en
Inventor
Sang-Hun Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LEE, SANG-HUN
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of EP3657186A1 publication Critical patent/EP3657186A1/en
Publication of EP3657186A4 publication Critical patent/EP3657186A4/en
Application granted granted Critical
Publication of EP3657186C0 publication Critical patent/EP3657186C0/en
Publication of EP3657186B1 publication Critical patent/EP3657186B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2822—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere of microwave or radiofrequency circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/40—Testing power supplies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
EP17910488.0A 2017-07-18 2017-07-18 Rf power device capable of monitoring temperature and rf characteristics at wafer level Active EP3657186B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2017/007682 WO2019017504A1 (en) 2017-07-18 2017-07-18 Rf power device capable of monitoring temperature and rf characteristics at wafer level

Publications (4)

Publication Number Publication Date
EP3657186A1 EP3657186A1 (en) 2020-05-27
EP3657186A4 true EP3657186A4 (en) 2021-07-28
EP3657186C0 EP3657186C0 (en) 2024-03-27
EP3657186B1 EP3657186B1 (en) 2024-03-27

Family

ID=65015208

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17910488.0A Active EP3657186B1 (en) 2017-07-18 2017-07-18 Rf power device capable of monitoring temperature and rf characteristics at wafer level

Country Status (3)

Country Link
US (1) US10847510B2 (en)
EP (1) EP3657186B1 (en)
WO (1) WO2019017504A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109886438A (en) * 2019-03-17 2019-06-14 江苏神州半导体科技有限公司 A kind of maintenance conditions method of radio-frequency power supply
CN113140527A (en) * 2021-04-15 2021-07-20 哈尔滨工业大学 Power device capable of accurately monitoring temperature and radio frequency characteristics in real time and packaging method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080025371A1 (en) * 2004-04-14 2008-01-31 International Business Machines Corperation On chip temperature measuring and monitoring circuit and method
US20160141284A1 (en) * 2013-08-23 2016-05-19 Mitsubishi Electric Corporation Semiconductor device

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DE19821834A1 (en) 1998-05-15 1999-11-25 Fahrzeugklimaregelung Gmbh Power MOS transistor (PMT) with integral overheat protection
US6989750B2 (en) * 2001-02-12 2006-01-24 Symbol Technologies, Inc. Radio frequency identification architecture
US7705349B2 (en) * 2002-08-29 2010-04-27 Micron Technology, Inc. Test inserts and interconnects with electrostatic discharge structures
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US8035188B2 (en) * 2004-07-28 2011-10-11 Panasonic Corporation Semiconductor device
US7103495B2 (en) * 2004-09-17 2006-09-05 Kabushiki Kaisha Toshiba System and method for burn-in test control
KR20060084306A (en) 2005-01-19 2006-07-24 엘지전자 주식회사 Device for detecing rf power using detecting capacitance
KR20080063974A (en) 2007-01-03 2008-07-08 삼성전자주식회사 A semiconductor including a temperature sensing pad and semiconductor package including the same
KR101321947B1 (en) * 2007-09-20 2013-11-04 삼성전자주식회사 semiconductor device with electrostatic discharge protection circuit and method of testing the same
JP2009088770A (en) * 2007-09-28 2009-04-23 Renesas Technology Corp Rf amplifier device
JP5170395B2 (en) * 2008-02-21 2013-03-27 日本電気株式会社 Wafer and temperature test method thereof
WO2009141906A1 (en) * 2008-05-21 2009-11-26 株式会社アドバンテスト Testing wafer unit and testing system
US8089126B2 (en) * 2009-07-22 2012-01-03 International Business Machines Corporation Method and structures for improving substrate loss and linearity in SOI substrates
JP2011055241A (en) * 2009-09-01 2011-03-17 Panasonic Corp High-frequency power amplifier
JP5381732B2 (en) * 2010-01-12 2014-01-08 三菱電機株式会社 High frequency amplifier
JP5361934B2 (en) * 2011-04-19 2013-12-04 株式会社東芝 Power amplifier
US9070651B2 (en) * 2011-12-02 2015-06-30 International Business Machines Corporation Non-linear kerf monitor and design structure thereof
US8847310B1 (en) * 2012-07-31 2014-09-30 Azure Silicon LLC Power device integration on a common substrate
JP5911450B2 (en) 2013-05-30 2016-04-27 エスペック株式会社 Power semiconductor device temperature characteristic calculation device
EP2879174B1 (en) * 2013-11-29 2021-09-08 Ampleon Netherlands B.V. Packaged RF power transistor device having next to each other ground leads and a video lead for connecting decoupling capacitors, RF power amplifier
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US9634618B2 (en) * 2015-07-20 2017-04-25 City University Of Hong Kong Impedance matching arrangement for an amplifier
JP6597357B2 (en) * 2016-02-09 2019-10-30 三菱電機株式会社 Field effect transistor with protective diode
JP2017157585A (en) * 2016-02-29 2017-09-07 株式会社アドバンテスト Semiconductor device and method for manufacturing the same
KR101785417B1 (en) * 2016-04-25 2017-10-16 이상훈 RF Power Device capable of monitoring Temperature and RF Characteristics at Wafer Level

Patent Citations (2)

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US20080025371A1 (en) * 2004-04-14 2008-01-31 International Business Machines Corperation On chip temperature measuring and monitoring circuit and method
US20160141284A1 (en) * 2013-08-23 2016-05-19 Mitsubishi Electric Corporation Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LOUAY ABDALLAH ET AL: "Defect-oriented non-intrusive RF test using on-chip temperature sensors", VLSI TEST SYMPOSIUM (VTS), 2013 IEEE 31ST, IEEE, 29 April 2013 (2013-04-29), pages 1 - 6, XP032431779, ISBN: 978-1-4673-5542-1, DOI: 10.1109/VTS.2013.6548889 *
PFOST M ET AL: "Accurate Temperature Measurements of DMOS Power Transistors up to Thermal Runaway by Small Embedded Sensors", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 25, no. 3, 1 August 2012 (2012-08-01), pages 294 - 302, XP011467808, ISSN: 0894-6507, DOI: 10.1109/TSM.2012.2202750 *

Also Published As

Publication number Publication date
EP3657186A1 (en) 2020-05-27
US20190096873A1 (en) 2019-03-28
WO2019017504A1 (en) 2019-01-24
US10847510B2 (en) 2020-11-24
EP3657186C0 (en) 2024-03-27
EP3657186B1 (en) 2024-03-27

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