EP3565238A4 - Imaging device, camera and imaging method - Google Patents

Imaging device, camera and imaging method Download PDF

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Publication number
EP3565238A4
EP3565238A4 EP17887648.8A EP17887648A EP3565238A4 EP 3565238 A4 EP3565238 A4 EP 3565238A4 EP 17887648 A EP17887648 A EP 17887648A EP 3565238 A4 EP3565238 A4 EP 3565238A4
Authority
EP
European Patent Office
Prior art keywords
imaging
camera
imaging device
imaging method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17887648.8A
Other languages
German (de)
French (fr)
Other versions
EP3565238A1 (en
EP3565238B1 (en
Inventor
Hiroaki Kanto
YOSHIDANorikatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of EP3565238A1 publication Critical patent/EP3565238A1/en
Publication of EP3565238A4 publication Critical patent/EP3565238A4/en
Application granted granted Critical
Publication of EP3565238B1 publication Critical patent/EP3565238B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14638—Structures specially adapted for transferring the charges across the imager perpendicular to the imaging plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
EP17887648.8A 2016-12-27 2017-12-26 Imaging device, camera and imaging method Active EP3565238B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016254499 2016-12-27
PCT/JP2017/046599 WO2018124055A1 (en) 2016-12-27 2017-12-26 Imaging device, camera and imaging method

Publications (3)

Publication Number Publication Date
EP3565238A1 EP3565238A1 (en) 2019-11-06
EP3565238A4 true EP3565238A4 (en) 2020-01-22
EP3565238B1 EP3565238B1 (en) 2023-07-19

Family

ID=62707599

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17887648.8A Active EP3565238B1 (en) 2016-12-27 2017-12-26 Imaging device, camera and imaging method

Country Status (5)

Country Link
US (1) US10573681B2 (en)
EP (1) EP3565238B1 (en)
JP (1) JP6731626B2 (en)
CN (1) CN109997352B (en)
WO (1) WO2018124055A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7535704B2 (en) * 2019-09-06 2024-08-19 パナソニックＩｐマネジメント株式会社 Imaging device
JP7295329B2 (en) * 2020-02-21 2023-06-20 株式会社日立国際電気 Imaging system, image processing program, and image processing method
CN112367475B (en) * 2021-01-15 2021-03-30 上海闪马智能科技有限公司 Traffic incident detection method and system and electronic equipment
US11696049B2 (en) * 2021-05-28 2023-07-04 Microsoft Technology Licensing, Llc Systems and methods for dark current compensation in single photon avalanche diode imagery
US11711628B2 (en) 2021-05-28 2023-07-25 Microsoft Technology Licensing, Llc Systems and methods for obtaining color imagery using single photon avalanche diodes

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038369A (en) * 1988-12-19 1991-08-06 Kabushiki Kaisha Toshiba X-ray fluoroscopic apparatus
WO1999009603A1 (en) * 1997-08-15 1999-02-25 Uniax Corporation Organic diodes with switchable photosensitivity
US20060092297A1 (en) * 2004-11-01 2006-05-04 Samsung Techwin Co., Ltd. Method and apparatus for removing hot pixels in a digital camera
US20070120045A1 (en) * 2005-08-31 2007-05-31 Fuji Photo Film Co., Ltd. Organic photoelectric conversion device and stack type photoelectric conversion device
US20110050965A1 (en) * 2009-09-03 2011-03-03 Fujifilm Corporation Image capture device and control method thereof
US20120242871A1 (en) * 2011-03-24 2012-09-27 Canon Kabushiki Kaisha Image pickup apparatus, image pickup system, and method of controlling them
US20130170615A1 (en) * 2011-12-28 2013-07-04 General Electric Company Radiation detector for use in sequential image acquisition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4292751B2 (en) * 2002-05-30 2009-07-08 日本ビクター株式会社 Imaging device
US20070041063A1 (en) 2005-08-18 2007-02-22 Matsushita Electric Industrial Co., Ltd. Image sensor
JP2008042180A (en) * 2006-07-13 2008-02-21 Matsushita Electric Ind Co Ltd Image sensor
JP4252078B2 (en) * 2006-09-28 2009-04-08 三洋電機株式会社 Photodetector
JP5020840B2 (en) * 2007-06-26 2012-09-05 富士フイルム株式会社 Image detection apparatus and image detector driving method
JP2009105246A (en) * 2007-10-24 2009-05-14 Seiko Epson Corp Photoelectric conversion element, solid-state imaging apparatus, and electronic apparatus
JP5335271B2 (en) * 2008-04-09 2013-11-06 キヤノン株式会社 Photoelectric conversion device and imaging system using the same
JP2011250249A (en) * 2010-05-28 2011-12-08 Panasonic Corp Video signal processing apparatus and video signal processing method
US8916947B2 (en) * 2010-06-08 2014-12-23 Invisage Technologies, Inc. Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
GB2497571A (en) * 2011-12-15 2013-06-19 St Microelectronics Res & Dev An imaging array with high dynamic range
FR3018653B1 (en) * 2014-03-11 2016-03-04 E2V Semiconductors IMAGE CAPTURE METHOD WITH DARK CURRENT REDUCTION AND LOW CONSUMPTION
JP6223881B2 (en) * 2014-03-18 2017-11-01 株式会社東芝 Photodetector
JP2017152669A (en) * 2016-02-25 2017-08-31 パナソニックＩｐマネジメント株式会社 Imaging device
JP6904730B2 (en) * 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 Imaging device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038369A (en) * 1988-12-19 1991-08-06 Kabushiki Kaisha Toshiba X-ray fluoroscopic apparatus
WO1999009603A1 (en) * 1997-08-15 1999-02-25 Uniax Corporation Organic diodes with switchable photosensitivity
US20060092297A1 (en) * 2004-11-01 2006-05-04 Samsung Techwin Co., Ltd. Method and apparatus for removing hot pixels in a digital camera
US20070120045A1 (en) * 2005-08-31 2007-05-31 Fuji Photo Film Co., Ltd. Organic photoelectric conversion device and stack type photoelectric conversion device
US20110050965A1 (en) * 2009-09-03 2011-03-03 Fujifilm Corporation Image capture device and control method thereof
US20120242871A1 (en) * 2011-03-24 2012-09-27 Canon Kabushiki Kaisha Image pickup apparatus, image pickup system, and method of controlling them
US20130170615A1 (en) * 2011-12-28 2013-07-04 General Electric Company Radiation detector for use in sequential image acquisition

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018124055A1 *

Also Published As

Publication number Publication date
WO2018124055A1 (en) 2018-07-05
US10573681B2 (en) 2020-02-25
EP3565238A1 (en) 2019-11-06
US20190280037A1 (en) 2019-09-12
JPWO2018124055A1 (en) 2019-07-25
CN109997352B (en) 2021-06-01
EP3565238B1 (en) 2023-07-19
CN109997352A (en) 2019-07-09
JP6731626B2 (en) 2020-07-29

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