EP3513440A1 - Optical detection apparatus and method - Google Patents
Optical detection apparatus and methodInfo
- Publication number
- EP3513440A1 EP3513440A1 EP16916152.8A EP16916152A EP3513440A1 EP 3513440 A1 EP3513440 A1 EP 3513440A1 EP 16916152 A EP16916152 A EP 16916152A EP 3513440 A1 EP3513440 A1 EP 3513440A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- optic fibre
- chip
- detectors
- modulators
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J1/46—Electric circuits using a capacitor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0425—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using optical fibers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
- G01J3/1895—Generating the spectrum; Monochromators using diffraction elements, e.g. grating using fiber Bragg gratings or gratings integrated in a waveguide
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/84—Switching means for devices switchable between superconducting and normal states
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Definitions
- the present invention relates to optical detecting apparatuses and methods, and more particularly to reading multiple photonic detectors.
- photon detectors convert photons into readable electrical signals, and are used in a variety of detectors and sensors in communications and computing systems, astronomy, and other fields. There are many applications, in which information is encoded and transmitted in a signal made up of photons.
- the use of nanowires in photon detectors has been under research.
- nanowire-based detectors one or more nanowires are positioned on a substrate toward which photons are directed. Individual photons can couple with the nanowire(s) upon contact, producing a detectable signal.
- SNSPDs Superconducting nanowire single photon detectors
- SNSPDs use low- temperature nanowires covering a small area on a substrate.
- they become very sensitive to the absorbed energy of individual photons.
- Even a single incident photon which is absorbed in the nanowire temporarily creates a region of non-superconductance in the otherwise superconducting wire.
- Such hot spot momentarily alters the electrical properties of the nanowire, until the nanowire resets itself to become superconducting again. Due to their very good speed and signal-to-noise ratio properties, SNSPDs are very attractive for many applications despite the need for refrigeration.
- such applications include quantum computing, infrared photoemission imaging, Laser-Induced Detection and Ranging (LIDAR), on-chip quantum optics, single plasmon detection, quantum plasmonics, single electron detection, single a and ⁇ particles detection, oxygen single luminescence detection and ultra-long distance classical communication.
- LIDAR Laser-Induced Detection and Ranging
- on-chip quantum optics single plasmon detection, quantum plasmonics, single electron detection, single a and ⁇ particles detection, oxygen single luminescence detection and ultra-long distance classical communication.
- an apparatus comprising: an optic fibre input; a plurality of photonic detectors comprising a nanowire and biased with an electric input; a set of modulators connected to the optic fibre input, each of the modulators being connected to one of the photonic detectors for forming a modulated optical detector signal; and an optic fibre output for the modulated optical detector signal.
- the optic fibre input, the photonic detectors, the set of modulators, and the optic fibre output are formed on a single chip.
- a method comprising: receiving light by an optic fibre input on a chip;
- the chip further comprises a first demultiplexer connected to the set of modulators for providing a selected wavelength of light from a multi-wavelength light source to each modulator.
- the chip further comprises a multiplexer for combining signals from each of the modulators into a single optic fibre connectable to the chip.
- the apparatus further comprises or is connectable to:
- biasing of the plurality of photonic detectors is arranged with a single electric wire.
- FIGURE 1 illustrates a chip unit with elements in accordance with at least some embodiments of the present invention
- FIGURES 2a and 2b illustrate an example apparatus capable of supporting at least some embodiments of the present invention
- FIGURES 3 and 4 illustrate examples of photonic chips in accordance with at least some embodiments of the present invention
- FIGURE 5 illustrates an example electrical circuit for an apparatus capable of supporting at least some embodiments of the present invention
- FIGURE 6 illustrates an example photonic detector for an apparatus capable of supporting at least some embodiments of the present invention
- FIGURE 7 illustrates an example electrical circuit for an apparatus capable of supporting at least some embodiments of the present invention
- FIGURES 8a and 8b illustrate modulator arrangements in accordance with at least some embodiments of the present invention
- FIGURE 9 illustrates an example electrical circuit for an apparatus capable of supporting at least some embodiments of the present invention
- FIGURES 10a and 10b illustrate examples of interferometric phase shift detectors capable of supporting at least some embodiments of the present invention
- FIGURE 11 illustrates an example of interferometric phase shift detector with reference signal capable of supporting at least some embodiments of the present invention
- FIGURE 12 illustrates a method in accordance with at least some embodiments of the present invention.
- a chip 1 As illustrated in Figure 1, a chip 1 according to some embodiments comprises an optic fibre input 2, a plurality of photonic detectors 3 comprising at least one nanowire, and a set of modulators 4 connected to the optic fibre input.
- the chip 1 may cryogenically refrigerated by a cryostat.
- Each of the electro-optical modulators 4 is connected to one of the photonic detectors and generates photonic detection output indicating photon detections to the modulator. Based on the detection output and the received light, the modulators 4 generate a modulated optical detector signal.
- the modulated optical detector signal is provided to an optic fibre output 5 for further transmission.
- the photonic detectors are biased with electric input 6. Since these elements are integrated in the same unit, one or more further RF transmission lines with given impedances from the chip may be avoided. For example, since the detectors may now be directly connected to the modulators at the single chip, further impedance matching components may be avoided.
- a single optic fibre may be connected to the input 2 and/or the output 5.
- the chip 1 and further the input 2 may further comprise a demultiplexer connected to the set of modulators to provide input light for each of the modulators 4.
- the chip 1 and further the output 5 may further comprise a multiplexer for combining signals from each of the modulators for output to a single optic fibre connectable to the chip.
- the multiplexer may be a wavelength multiplexer, such as an arrayed waveguide (AWG), for providing a selected wavelength of light from a multi-wavelength light source to each modulator.
- AWGs fabricated on silicon platform capable of separating hundreds of wavelengths have been proposed [1].
- FIGS 2a and 2b illustrate example systems or apparatuses 10 comprising the chip 1 and further elements, capable of supporting at least some embodiments, and illustrate electrical and optical external setup when applying wavelength multiplexing.
- the chip 1 is cryogenically refrigerated chip in a cryostat 22.
- a multiple wavelength laser source 20, or a set of multiplexed lasers injects light into an optic input fibre 21 that will guide the light into the cryostat 22 and to the chip 1.
- multiple wavelength laser sources already available or proposed for Dense Wavelength Division Multiplexing (DWDM) communications may be applied.
- a single photon input 23 is provided to the chip 1 and further to the detectors on the chip. The single photon input 23 may be fed through an optic fibre or an optical window, for example.
- An electrical direct current (DC) source 24 is connected to the chip 1 to bias the detectors.
- DC electrical direct current
- the light is de-multiplexed on the chip, further examples being illustrated below in connection with Figures 3 and 4, modulated on the basis of detection output from the detectors 3 indicating photon detections, and re-multiplexed before being injected in an output fibre 25. Outside the cryostat, the light is de-multiplexed again by the demultiplexer 26 and the modulation may be measured with interferometric phase detectors 27.
- a single fibre 28 can be used both to input non-modulated light and output modulated light.
- the input light and output light can be separated with a circulator 29.
- Figure 3 illustrates how the photonic chip 1 may be arranged to de-multiplex, modulate and re-multiplex the light.
- the incoming light from input fibre 30, such as the fibre 21 of the apparatus 10 illustrated in Figure 2a may be coupled by a coupler 31 to a demultiplexer 32.
- the light may be coupled vertically with a grating coupler or horizontally with a tapered waveguide or inverse taper waveguide.
- a detector 34 may be directly connected to each modulator 35.
- a single DC metallic cable 36 coupled towards DC source 37 can be used to bias the detectors 34.
- the light is wavelength de-multiplexed for example by an AWG.
- Each of the channels 33 from the demultiplexer goes through a modulator 35 driven by the detector output, such as a phase shifter or amplitude modulator.
- the channels 38 are fed into a multiplexer 39, such as an AWG, and coupled via a coupler 40 into the output fibre 41, such as the fibre 25.
- each channel 33 may be split by a 1x2 splitter 42 in two channels that loop back into each other. Given that the optical path of the light travelling in both directions of the loop is the same, they will interfere constructively when combined again in the reverse direction.
- the modulation can be performed by the modulator 35 along this loop, as in Figure 4, or before the splitter. On the latter case, the loop can be replaced by a reflector.
- the detectors such as
- SNSPDs are deposited on a photon waveguide 50 in which the single photons to be detected are injected.
- the modulator 52 may be arranged on a readout waveguide 51.
- the light can be coupled from an optic fibre with the help of a grating coupler or a taper.
- grating coupler or a taper.
- Figure 6 illustrates cross-section of a photon waveguide detector according to an embodiment, such as the photon waveguide 50 of Figure 5.
- Silicon waveguide 61 is provided on top of oxide 62 layer on top of silicon substrate 63.
- Super-conducting nanowires 60a and 60b are provided on top of the silicon waveguide 61.
- the detector is a vertically coupled SNSPD.
- the light can be coupled directly from a fibre or from an optical window in the cryostat.
- Figures 5 and 7 further illustrate the on-chip electrical connection between the SNSPD and the modulator.
- a DC connection from a DC source 37 is used to bias the SNSPD, while the RF response 53 of the SNSPD as the optical detection output will be transferred to the modulator 52.
- the impedances in the three branches i.e. ZSNS PD 54, 70, Z D c 55, Z RF 56, are arranged as follows: only DC and low frequency current runs through Z D c. Only high frequency current runs through Z RF . Both DC and RF current can run in the SNSPD branch. It is to be noted that in conventional electrical readout of SNSPDs a bias tee is instead typically used to implement the above conditions. Z RF 56 needs to be higher than Z D c 55 at low frequency and lower than Z D c 55 at high frequency. This is automatically the case if the modulator is capacitive (Z RF -l/jcoC). Then Z D c could be simply a resistor, for example 50 ohms, and the modulator's impedance would be naturally higher at low frequency and lower at high frequency.
- the modulator 4, 35, 52 may be a silicon modulator or an indium phosphide modulator, for example.
- a silicon modulator may be based on MOS capacitor, an example of such modulator being provided in IEEE publication [2] "Silicon Photonic Modulator Based on a MOS-Capacitor and a CMOS Driver", M. Webster et al, 19-22 Oct. 2014, ISSN 1550-8781, DOI 10.1109/CSICS.2014.6978577, hn p: kx xpk: ⁇ : :. ⁇ - >i ⁇ n stamp Jsp?ai3 ⁇ 4nirnber ::: 6978577.
- an additional capacitor 81 can be coupled to the modulator 52. If the modulator has low resistive impedance Z M oduiator 80, the capacitor 81 is connected in series. If the modulator has high resistive impedance 82, the capacitor 81 can be connected in parallel. Another way to fulfil the condition Z RF ⁇ Z DC at high frequency without having a capacitive Z RF would be to have an inductive Z D c- In this case Z D c would be low at low frequency and high at high frequency.
- Figure 9 further illustrates an example electrical circuit for a plurality of modulators 52.
- a substantial advantage of above-illustrated embodiments is that electrical cables are no longer required to readout the photon counts. Even if there are multiple detectors on the chip, all detectors can be biased with only one electric cable.
- the optical modulation needs to be detected and converted into electrical signals by detectors 27.
- the modulators 4, 35, 52 on the chip may be phase shifters, the phase shifts indicating the detection of photons on each channel that can be detected with an interferometer.
- 105 may be used to compare the phase of an input signal via splitters 101, 102 with its own phase a short time before with the help of a delay 103.
- the intensity measured after recombining the signal and its delayed version will vary with varying phase.
- an external reference 111 may be applied for measuring the phase shifts in the modulated signal 110.
- the reference 111 may be obtained by tapping into the unmodulated source signal.
- amplitude modulation is applied, however, sensitivity may be lower.
- time division multiplexing is used to readout the multiple detectors 3 with a single fibre input and output.
- a single wavelength may be injected in the fibre output 5.
- a photonic switch may be provided on the chip 1 for directing the light sequentially in one waveguide after another, replacing the AWGs 32 and 39.
- a combination of TDM and WDM is used to provide the modulated signal to the fibre output 5.
- each wavelength of the readout optical signal may be separated as illustrated in Figure 3 and 4, and a switch may be used to split the light into even more waveguides.
- the waveguides, AWGs, switches and modulators can be fabricated with Complementary metal oxide semiconductor (CMOS) technology.
- CMOS Complementary metal oxide semiconductor
- a thin film of superconducting material such as Niobium Nitride NbN, amorphous Tungsten Silicide WSi, or amorphous Molybdenum Silicide MoSi, can be deposited.
- the nanowires can be etched into the superconducting film. It is to be noted order of these manufacturing steps may differ, as long as the film is deposited before etching.
- III-V materials technology may be applied instead of CMOS.
- Figure 12 is a flow graph of a method.
- the phases of the illustrated method may be performed on a chip for reading multiple photonic detectors, such as the chip 1 according to at least some of the embodiments illustrated above.
- Incoming light is received 121 by an optic fibre input on a chip comprising a nanowire and biased with an electric input.
- Detection output is generated 122 by a plurality of photonic detectors on the chip.
- a set of the modulators is connected to the optic fibre input and to the photonic detectors, such as the detectors 3 directly connected to each respective modulator 4 to provide the detection output signal or pulses to the modulator 4.
- a modulated optical detector signal is generated 123 by a set of modulators on the chip on the basis of the detection output from the photonic detectors and the light from the optic fibre.
- the modulated optical detector signal is provided 124 to an optic fibre output of the chip.
- the wavelength-modulation related features illustrated in Figures 2a to 4 may be applied, whereby the method may further comprise the demultiplexing (32), the multiplexing (39) and the further demultiplexing (26) actions.
- a chip, an apparatus or a device may be provided which may be configured to perform or comprise means for carrying out the phases of Figure 12 and its further embodiments.
- the chip 1 and the apparatus system capable of supporting at least some embodiments illustrated above may be applied in a wide variety of electronic devices.
- Such electronic device applying photonic detection may be an information processing, measuring, and/or communication device, for example.
- the device may include one or more chips 1 in accordance with at least some of the embodiments illustrated above.
- the chip 1 and/or the device 130 may be applicable or configured for quantum information processing, such as quantum cryptography and key distribution (QKD), optical quantum computing, and quantum simulation, characterization of quantum emitters, optical communications e.g. for space-to-ground communications, optoelectronics, integrated circuit testing, fibre sensing and time-of- flight ranging.
- QKD quantum cryptography and key distribution
- biotechnology applications such as bio-luminescence, single molecule detection and DNA sequencing, astrophysics, nuclear particle detection, spectroscopy, meteorology, such as remote sensing, environmental monitoring and lidar, metrology, such as quantum standards, primary radiometric scales and quantum enhanced measurements, and medical physics, such as medical imaging, radioactivity monitoring, and clinical tomography.
- the electronic device may further comprise various other units, such as at least one single- or multi-core processor with at least one processing core and at least one memory including computer program code.
- the at least one memory and the computer program code may be configured to, with the at least one processing core cause the device to perform certain actions are defined in the computer program.
- the device may also comprise a transmitter, a receiver, and/or a user interface, for example.
- At least some embodiments of the present invention find industrial application in systems applying optical detection, such as quantum information systems.
- GSM Global system for mobile communication
- UI User interface WCDMA Wideband code division multiple access, WiMAX Worldwide interoperability for microwave access WLAN Wireless local area network
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- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2016/050635 WO2018050948A1 (en) | 2016-09-14 | 2016-09-14 | Optical detection apparatus and method |
Publications (2)
Publication Number | Publication Date |
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EP3513440A1 true EP3513440A1 (en) | 2019-07-24 |
EP3513440A4 EP3513440A4 (en) | 2020-09-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP16916152.8A Withdrawn EP3513440A4 (en) | 2016-09-14 | 2016-09-14 | Optical detection apparatus and method |
Country Status (3)
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US (1) | US20210328126A1 (en) |
EP (1) | EP3513440A4 (en) |
WO (1) | WO2018050948A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111707385A (en) * | 2020-06-19 | 2020-09-25 | 上海交通大学 | Time-flight detection technology-based system for realizing time-stamped glass-color sampling quantum computation |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10302867B1 (en) * | 2018-04-05 | 2019-05-28 | Northrop Grumman Systems Corporation | Redirected optical modulator output |
US11209660B2 (en) | 2020-01-20 | 2021-12-28 | Northrop Grumman Systems Corporation | Projecting an image of an object on an image plane |
US11201686B1 (en) | 2020-09-15 | 2021-12-14 | International Business Machines Corporation | Optically multiplexed quantum control |
US11460877B2 (en) | 2020-12-12 | 2022-10-04 | Anyon Systems Inc. | Hybrid photonics-solid state quantum computer |
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US4866698A (en) * | 1987-11-17 | 1989-09-12 | The Boeing Company | Multiplexed optical communication system |
KR100539928B1 (en) * | 2003-08-29 | 2005-12-28 | 삼성전자주식회사 | Multi-wavelength light source and wavelength division multiplexing system using the same |
EP2256972A1 (en) * | 2009-05-28 | 2010-12-01 | Alcatel Lucent | System and method for demultiplexing optical multi-wavelength signals |
US20120146646A1 (en) * | 2010-12-09 | 2012-06-14 | General Electric Company | Nanophotonic system for optical data and power transmission in medical imaging systems |
US9076907B2 (en) * | 2011-10-06 | 2015-07-07 | Massachusetts Institute Of Technology | Compactly-integrated optical detectors and associated systems and methods |
WO2014088669A2 (en) * | 2012-09-14 | 2014-06-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for scalable readouts for photon detectors using integrated modulators and wavelength-division multiplexing |
WO2016008771A1 (en) * | 2014-07-14 | 2016-01-21 | University Of Copenhagen | Optical device having efficient light-matter interface for quantum simulations |
-
2016
- 2016-09-14 EP EP16916152.8A patent/EP3513440A4/en not_active Withdrawn
- 2016-09-14 US US16/332,650 patent/US20210328126A1/en not_active Abandoned
- 2016-09-14 WO PCT/FI2016/050635 patent/WO2018050948A1/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111707385A (en) * | 2020-06-19 | 2020-09-25 | 上海交通大学 | Time-flight detection technology-based system for realizing time-stamped glass-color sampling quantum computation |
CN111707385B (en) * | 2020-06-19 | 2021-05-07 | 上海交通大学 | Time-flight detection technology-based system for realizing time-stamped glass-color sampling quantum computation |
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US20210328126A1 (en) | 2021-10-21 |
EP3513440A4 (en) | 2020-09-09 |
WO2018050948A1 (en) | 2018-03-22 |
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