EP3414609A4 - Émetteur optique à haute vitesse doté d'un substrat de silicium - Google Patents

Émetteur optique à haute vitesse doté d'un substrat de silicium Download PDF

Info

Publication number
EP3414609A4
EP3414609A4 EP17750673.0A EP17750673A EP3414609A4 EP 3414609 A4 EP3414609 A4 EP 3414609A4 EP 17750673 A EP17750673 A EP 17750673A EP 3414609 A4 EP3414609 A4 EP 3414609A4
Authority
EP
European Patent Office
Prior art keywords
silicon substrate
optical transmitter
speed optical
speed
transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17750673.0A
Other languages
German (de)
English (en)
Other versions
EP3414609A1 (fr
Inventor
Guoliang Li
Stephen B. Krasulick
Samir Desai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skorpios Technologies Inc
Original Assignee
Skorpios Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/426,823 external-priority patent/US10509163B2/en
Priority claimed from US15/426,366 external-priority patent/US10234626B2/en
Priority claimed from US15/426,375 external-priority patent/US10732349B2/en
Application filed by Skorpios Technologies Inc filed Critical Skorpios Technologies Inc
Publication of EP3414609A1 publication Critical patent/EP3414609A1/fr
Publication of EP3414609A4 publication Critical patent/EP3414609A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/02—Wavelength-division multiplex systems
    • H04J14/03—WDM arrangements
    • H04J14/0305—WDM arrangements in end terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12104—Mirror; Reflectors or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4037—Edge-emitting structures with active layers in more than one orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
EP17750673.0A 2016-02-08 2017-02-08 Émetteur optique à haute vitesse doté d'un substrat de silicium Withdrawn EP3414609A4 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201662292675P 2016-02-08 2016-02-08
US201662292636P 2016-02-08 2016-02-08
US201662292633P 2016-02-08 2016-02-08
US15/426,823 US10509163B2 (en) 2016-02-08 2017-02-07 High-speed optical transmitter with a silicon substrate
US15/426,366 US10234626B2 (en) 2016-02-08 2017-02-07 Stepped optical bridge for connecting semiconductor waveguides
US15/426,375 US10732349B2 (en) 2016-02-08 2017-02-07 Broadband back mirror for a III-V chip in silicon photonics
PCT/US2017/016958 WO2017139345A1 (fr) 2016-02-08 2017-02-08 Émetteur optique à haute vitesse doté d'un substrat de silicium

Publications (2)

Publication Number Publication Date
EP3414609A1 EP3414609A1 (fr) 2018-12-19
EP3414609A4 true EP3414609A4 (fr) 2020-02-19

Family

ID=64133291

Family Applications (2)

Application Number Title Priority Date Filing Date
EP17750673.0A Withdrawn EP3414609A4 (fr) 2016-02-08 2017-02-08 Émetteur optique à haute vitesse doté d'un substrat de silicium
EP17750687.0A Active EP3414806B1 (fr) 2016-02-08 2017-02-08 Miroir arrière à large bande pour puce iii-v dans de la photonique de silicium

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP17750687.0A Active EP3414806B1 (fr) 2016-02-08 2017-02-08 Miroir arrière à large bande pour puce iii-v dans de la photonique de silicium

Country Status (2)

Country Link
EP (2) EP3414609A4 (fr)
CN (2) CN108885320A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113300218B (zh) * 2021-05-22 2022-10-14 福建中科光芯光电科技有限公司 硅基光通信c波段高线性面发射激光光源及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030034538A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Tunable laser array in composite integrated circuitry
US20140185980A1 (en) * 2012-12-31 2014-07-03 Futurewei Technologies, Inc. Silicon-On-Insulator Platform for Integration of Tunable Laser Arrays
US20150097210A1 (en) * 2013-10-09 2015-04-09 Skorpios Technologies, Inc. Coplanar integration of a direct-bandgap chip into a silicon photonic device
US20150341123A1 (en) * 2013-07-17 2015-11-26 Inphi Corporation Integrated control for silicon photonics

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834337B2 (ja) * 1990-04-02 1996-03-29 シャープ株式会社 半導体レーザ素子の製造方法
TW373083B (en) * 1996-12-20 1999-11-01 Corning Inc Reflective coupling array for optical waveguide
WO2002065600A2 (fr) * 2001-02-14 2002-08-22 Gemfire Corporation Source de pompage laser a canaux multiples et procede d'emballage
GB0127690D0 (en) * 2001-11-19 2002-01-09 Denselight Semiconductors Pte Coating of optical device facets at the wafer-level
EP1900189B1 (fr) * 2005-06-29 2018-04-18 Cisco Technology, Inc. Traversee parallele d'un systeme de fichiers pour l'ecriture miroir transparente de repertoires et de fichiers
JP2008251562A (ja) * 2007-03-29 2008-10-16 Sharp Corp 半導体レーザ素子およびその形成方法
US8213804B2 (en) * 2007-06-05 2012-07-03 Intel Corporation Semiconductor optical amplifier for an external cavity diode laser
US8064493B2 (en) * 2009-06-12 2011-11-22 Binoptics Corporation Surface emitting photonic device
US9316785B2 (en) * 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8615025B2 (en) * 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
CN102075282B (zh) * 2011-02-24 2013-12-25 上海大学 波分复用无源光网络实现动态波长调度和保护功能的系统和方法
GB2493988B (en) * 2011-08-26 2016-01-13 Oclaro Technology Ltd Monolithically integrated tunable semiconductor laser
US8831049B2 (en) * 2012-09-14 2014-09-09 Laxense Inc. Tunable optical system with hybrid integrated laser
WO2014121443A1 (fr) * 2013-02-05 2014-08-14 华为技术有限公司 Dispositif de module optique
US8982921B2 (en) * 2013-02-07 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor lasers and etched-facet integrated devices having H-shaped windows
US9496961B2 (en) * 2015-04-09 2016-11-15 International Business Machines Corporation External cavity laser based wavelength division multiplexing superchannel transceivers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030034538A1 (en) * 2001-08-15 2003-02-20 Motorola, Inc. Tunable laser array in composite integrated circuitry
US20140185980A1 (en) * 2012-12-31 2014-07-03 Futurewei Technologies, Inc. Silicon-On-Insulator Platform for Integration of Tunable Laser Arrays
US20150341123A1 (en) * 2013-07-17 2015-11-26 Inphi Corporation Integrated control for silicon photonics
US20150097210A1 (en) * 2013-10-09 2015-04-09 Skorpios Technologies, Inc. Coplanar integration of a direct-bandgap chip into a silicon photonic device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017139345A1 *

Also Published As

Publication number Publication date
CN108886236A (zh) 2018-11-23
CN108886236B (zh) 2022-02-25
EP3414806A1 (fr) 2018-12-19
EP3414806A4 (fr) 2020-03-04
CN108885320A (zh) 2018-11-23
EP3414806B1 (fr) 2023-06-21
EP3414609A1 (fr) 2018-12-19

Similar Documents

Publication Publication Date Title
EP3505554A4 (fr) Substrat hydrofuge
EP3424113A4 (fr) Dispositif de laser vcsel haute vitesse
EP3548940A4 (fr) Empilement optique
EP3183745A4 (fr) Modules opto-électroniques présentant un substrat de silicium, et procédés de fabrication de tels modules
EP3560700A4 (fr) Revêtement à faible émissivité pour un substrat en verre
EP3779572A4 (fr) Article optique
EP3525030A4 (fr) Dispositif optique
EP3574351A4 (fr) Dispositif plasmonique
EP3514601A4 (fr) Dispositif optique
EP3560707A4 (fr) Substrat en résine transparente
EP3617777A4 (fr) Dispositif optique
EP3421435A4 (fr) Fibre optique
EP3429669A4 (fr) Substrat intra-moule
EP3557293A4 (fr) Composant optique
EP3437132A4 (fr) Module de dispositif optoélectronique ayant un interposeur en silicium
EP3485303A4 (fr) Empilement optique
EP3642672A4 (fr) Dispositifs optiques commandés en tension
EP3650912A4 (fr) Dispositif optique
EP3617770A4 (fr) Dispositif optique
EP3435126A4 (fr) Fibre optique
EP3650908A4 (fr) Dispositif optique
EP3650910A4 (fr) Dispositif optique
EP3657704A4 (fr) Dispositif de communication optique
EP3425434A4 (fr) Dispositif optique
EP3413012A4 (fr) Module optique

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20180831

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: G02B 6/12 20060101ALI20190930BHEP

Ipc: H01S 5/02 20060101ALI20190930BHEP

Ipc: H04B 10/50 20130101ALI20190930BHEP

Ipc: G02B 6/42 20060101AFI20190930BHEP

Ipc: H01S 5/022 20060101ALI20190930BHEP

Ipc: H01S 5/026 20060101ALI20190930BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20200116

RIC1 Information provided on ipc code assigned before grant

Ipc: G02B 6/12 20060101ALI20200110BHEP

Ipc: H01S 5/022 20060101ALI20200110BHEP

Ipc: G02B 6/42 20060101AFI20200110BHEP

Ipc: H01S 5/026 20060101ALI20200110BHEP

Ipc: H04B 10/50 20130101ALI20200110BHEP

Ipc: H01S 5/02 20060101ALI20200110BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20210608

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20210722