EP3339828B1 - Device and method for evaluating at least one operating condition of a heat exchanger - Google Patents

Device and method for evaluating at least one operating condition of a heat exchanger Download PDF

Info

Publication number
EP3339828B1
EP3339828B1 EP17209128.2A EP17209128A EP3339828B1 EP 3339828 B1 EP3339828 B1 EP 3339828B1 EP 17209128 A EP17209128 A EP 17209128A EP 3339828 B1 EP3339828 B1 EP 3339828B1
Authority
EP
European Patent Office
Prior art keywords
wall
probe
temperature
resistive
thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP17209128.2A
Other languages
German (de)
French (fr)
Other versions
EP3339828A1 (en
Inventor
Zoé MINVIELLE
Frédéric DUCROS
Alain MEMPONTEIL
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of EP3339828A1 publication Critical patent/EP3339828A1/en
Application granted granted Critical
Publication of EP3339828B1 publication Critical patent/EP3339828B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00Measuring quantity of heat
    • G01K17/06Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
    • G01K17/08Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
    • G01K17/20Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature across a radiating surface, combined with ascertainment of the heat transmission coefficient
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00Measuring quantity of heat
    • G01K17/06Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
    • G01K17/08Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature

Definitions

  • the invention relates to the field of devices and processes heat transfer seats where the walls can, at times, be the subject of fouling phenomena or degradation, for example by loss of material due to their corrosion or oxidation.
  • This concerns the chemical industry, the energy sector, including the oil sector, the agri-food sector, the transport sector, the cold industry, air conditioning, etc.
  • the invention relates more particularly to a device and a method for evaluating the operating conditions of a heat exchanger including any type of technology, such as a condenser, an evaporator, a reactor-exchanger, etc.
  • the document WO 01/94876 A1 proposes in particular a device and a method for monitoring the fouling of a combustion tank of a fossil fuel exchanger-reactor.
  • a resistance value of a network of conducting material is evaluated, for example constituted by the walls of the tubes of an exchanger.
  • this network is subjected to one or more given electrical signals.
  • the thus calculated resistance value is compared to a nominal resistance value determined on the same network at a previous reference time. If the resistance value thus obtained is greater than the nominal resistance value, it is considered that there is fouling.
  • This solution has the particular disadvantage of being able to be used only with a contribution of thermal convection phenomena (operation of the reactor at a flow rate of fossil energy and at a given tank temperature) which is the one with which the measurement of the nominal resistance value was measured.
  • the document WO 2007/099240 A1 discloses a stacked plate heat exchanger including a device for evaluating its fouling state.
  • This evaluation device comprises an electrical resistance, which is thermally connected to the plate located at the end of the stack and which is intended to be traversed by a parameterized electric current to amplify the heat flow conveyed within the exchanger.
  • the evaluation device also comprises means for measuring the temperature (thermocouples) in the direct vicinity of said electrical resistance. The local measurement of the temperature makes it possible to compare the evolution of the temperature in the vicinity of the resistance, with reference profiles. Depending on the deviation from the reference profiles, it is possible to deduce changes in the thermal capacity of the plate. These modifications being a function of the clogging of the plate, the device makes it possible to evaluate this fouling.
  • the document WO 2009/153323 A1 discloses a device and method for the detection and / or measurement of fouling in a heat exchanger.
  • the method consists in measuring the resistive value of a temperature probe disposed at a wall of the exchanger. More particularly, for two successive periods, the resistance is subjected to two constant power levels.
  • the first power level P1 chosen so that the heat flow caused by the Joule effect has an influence on the wall of the exchanger and not on the fouling layer when it exists, is lower than the second power level P2. which is chosen so that the heat flow caused by the Joule effect has an impact both on the wall of the exchanger and on the fouling layer when it exists.
  • the duration of application of the powers and their sequence are chosen so as to ensure the stability of the operating conditions and to reach a stationary thermal regime at the end of the application of powers P1 and P2.
  • Measurements of resistive values are respectively made at the end of the application of the powers.
  • the difference in the resistive value measurements then constitutes a measure of the thermal resistance of the fouling layer. Therefore, the The difference in the resistive value measurements constitutes a characteristic value of the level of fouling of the wall of the exchanger.
  • the three devices discussed above are dedicated to the measurement of local temperatures and / or local thermal flows and, therefore, allow to go back to the local heat exchange coefficient, and thus to evaluate the local operating conditions of a heat exchanger.
  • each of these evaluations requires making strong assumptions about the thermal environment of the temperature probe to extract, from physical measurements, the local value of the exchange coefficient.
  • none of these evaluations makes it possible to discriminate on which side of the wall is the fouling.
  • the local value of the exchange coefficient has been obtained, it is not possible, if the convection terms vary, to identify the respective contributions of the convection and conduction phenomena (in the walls and in the possible ones). layers of fouling) among the various contributions to the exchange coefficient.
  • An object of the present invention is to respond, at least in part, to the limitations previously set forth.
  • each single-probe further comprises at least one encapsulant encapsulating at least part of the resistive circuit; the encapsulant is based on a dielectric material, preferably thermostable.
  • the bi-probe thus has two functions, that of heat sink and that of resistive temperature measurement.
  • the bi-probe according to the first aspect of the invention comprises a stack of two mono-probes separated by a layer thermally insulating. This layer creates a thermal resistance between the two mono-probes, so that the equilibrium temperatures of the single-probes can be independent or at least different from each other, in particular when applying electrical currents of different intensities to the resistive circuits.
  • the bi-probe makes it possible to associate thermal flows passing therethrough with temperature differences, or with variations in temperature evolution, between the two single-probes.
  • the dual temperature probe is disposed on one of a first side and a second side of the wall of the heat exchanger; the wall has a reference thermal resistance Rp .
  • the system is essentially such that the power supply device is configured to supply each resistive circuit of the bi-probe and that the electrical current measuring device is configured to measure the electric current flowing in each resistive circuit of the bi-probe. so that the equilibrium temperatures of the single-probes may be different from one another, when applying electric currents of different intensities to the resistive circuits, and may be measured independently of one another. 'other.
  • the method thus makes it possible to discriminate on which side (s) of the wall a fouling has been deposited, for example since a nominal or prior evaluation of the operating conditions of the heat exchanger.
  • a fourth aspect of the present invention relates to a computer program product comprising instructions, which, when interpreted and executed by at least one processor, for example the supervisory device, perform at least the temperature calculation step. Tf and Tf ' fluids and thermal resistors R and R ' on each side of the wall according to the method concerned by the third aspect of the invention.
  • the fourth aspect of the present invention relates to a computer-readable non-transitory medium, comprising instructions, which, when interpreted and executed by at least one processor, for example the supervisory device, perform at least one the step of calculating the temperatures Tf and Tf ' of the fluids and the thermal resistances R and R ' on each side of the wall according to the method concerned by the third aspect of the invention.
  • resistive circuit is understood to mean a path or an electrical conduction path going from one point to another, for example from one connector to another or from one terminal to another, preferably presenting sinuosities in a to cover, preferably largely and as homogeneously as possible, a generally flat surface.
  • dielectric qualifies a material whose electrical conductivity is sufficiently low in the given application to serve as an electrical insulator.
  • encapsulant means the coating resulting from an encapsulation operation of at least partially embedding an object to isolate it electrically and possibly protect it.
  • compliant is understood to mean the geometrical quality of a layer that has the same thickness despite changes in layer direction, for example at the edges of a temperature probe.
  • a “base” element of a material A is understood to mean an element comprising this material A and possibly other materials.
  • Electric current is understood to mean an overall displacement of electric charge carriers, generally electrons, within a conductive material.
  • the electric current is defined by a set of parameters among which the intensity, the voltage and the power.
  • thermally sensitive electrically conductive material means an electrically conductive material, such as a metal, whose resistance varies with temperature according to a law of evolution specific to the electrically conductive material.
  • a resistive circuit 11, 21 based on such a material is in part a mono-probe 1, 2 whose temperature varies depending on the resistance of the resistive circuit 11, 21 according to the law ad hoc evolution .
  • T 0 a reference temperature (in ° C)
  • T the temperature (in ° C) of the single-probe 1
  • R T and R 0 are the electrical resistances (in ohm) of the resistive circuit 11, 21 respectively at the temperature T of the single-probe 1, 2 and at the temperature T 0
  • is a constant (in ° C -1 ) called coefficient thermal and defined in the relevant material standard.
  • a dual temperature probe according to the first aspect of the invention is described below with reference to Figures 1 to 5 .
  • Each bi-probe 0 comprises two mono-probes 1, 2 and a layer 3 based on a thermally insulating material.
  • the layer 3 is interposed between the two mono-probes 1, 2.
  • Each single-probe 1.2 comprises a resistive circuit 11, 21 for example as illustrated in FIG. figure 1 .
  • Each resistive circuit 11, 21 is shaped so as to maximize the developed surface and cause a power deposit as homogeneous as possible.
  • each resistive circuit 11, 21 may take the form of a coil so as to hold a long length of electrical conduction track on a surface of limited dimensions.
  • Each resistive circuit 11, 21 may take other forms, for example a spiral shape.
  • the width of the track is typically between 10 microns and 1 mm and is for example equal to 140 microns.
  • the thickness of the track is typically between 5 microns and 30 microns and is for example equal to 10 microns.
  • Each resistive circuit 11, 21 is based on a thermally sensitive electrically conductive material.
  • each resistive circuit 11, 21 is based on a thermosensitive metal chosen for example from nickel, platinum, tungsten, copper and any alloy based on these metals, because all have the property of having a thermal coefficient ⁇ (in ° C -1 ) high, to be measured with conventional current measurement devices.
  • a thermosensitive metal chosen for example from nickel, platinum, tungsten, copper and any alloy based on these metals, because all have the property of having a thermal coefficient ⁇ (in ° C -1 ) high, to be measured with conventional current measurement devices.
  • Other types of metals may be used if they have a sufficiently high thermal coefficient.
  • the resistance R T of each resistive circuit 11, 21 can be converted into temperature T , knowing the characteristics of thermo-sensitivity ⁇ , T 0 and R 0 of the constituent metal of the resistive circuit 11, 21.
  • the resistance R T of the resistive circuit 11, 21 can be determined by knowing at least two parameters among the power P, the intensity I and the voltage U of the electric current flowing in the resistive circuit 11, 21.
  • the thermal sensitivity of each mono-probe 1, 2 is expressed in ° C / W; it depends on its thermal environment.
  • the thermal sensitivity of each mono-probe 1, 2 can typically be about 1 ° C / W, which means that the temperature of each single-probe 1, 2 is 1 ° C for an applied power of 1 W.
  • different electrical current measuring devices 20 such as a voltage measuring device (voltmeter), an intensity measuring device (ammeter) or a device for measuring power measurement can be used to calculate the voltage, the intensity or the power respectively of the electric current flowing in the resistive circuit 11, 21.
  • the measuring device 20 used can be chosen to measure the untaxed parameter, and therefore not known. by the supply device 10 which correlatively can be a voltage or current supply device.
  • each resistive circuit 11, 21 may be encapsulated in an encapsulant 13, 23.
  • the encapsulant 13, 23 may completely encase the resistive circuit 11, 21, or only partially.
  • the encapsulant 13, 23 may be applied by laminating a film, or two films, to one or both sides of the resistive circuit 11, 21, respectively.
  • the resistive circuit 11, 21 can be printed or deposited directly on an encapsulant film 13, 23.
  • the encapsulant 13, 23 is based on a dielectric material, such as than a polymer.
  • This polymer may be a polyimide, such as Kapton®.
  • Kapton® film may have dimensions of 30 mm x 60 mm x 25 to 50 ⁇ m.
  • the dimensions and the shape of the films, and therefore of the encapsulant 13, 23, can be adapted to the surface in which the resistive circuit 11, 21 is inscribed.
  • the encapsulant 13, 23 plays the role of protection and protection. electrical insulation of the resistive circuit 11, 21.
  • the encapsulant 13, 23 is preferably able to withstand the temperatures at which the bi-probe 0 according to the invention is intended to be subjected. If these temperatures are high, for example greater than 200 ° C., or even of the order of 350 ° C. for applications in the petroleum sector in particular, the materials constituting the bi-probe 0 can be adapted, and in particular the encapsulant 13, 23 is preferably a thermostable material.
  • Each resistive circuit 11, 21 and its encapsulant 13, 23 thus form a mono-probe 1, 2.
  • Each single-probe 1, 2 typically covers a free-form surface, ranging from one to a few cm 2 , adaptable to the the wall 40 of the heat exchanger on which it is intended to be arranged.
  • Each mono-probe 1, 2 is thus of small thickness which gives it a certain flexibility and thus a facilitated adaptation to almost any form of support. In addition, it is therefore possible to neglect, in good approximation, the heat losses by the sides of the single-probe 1, 2.
  • the invention is not limited to the examples illustrated on the Figures 6 and 7 where the wall 40 is flat; the wall 40 can take any shape, and for example can be closed on itself, for example so as to form a tube.
  • Each mono-probe 1, 2 has two functions: that of dissipator Joule effect and that of resistive temperature measurement.
  • each single-probe 1, 2 can be wired with four wires 12, 22, if necessary through the encapsulant 13, 23: two wires for the power supply and two wires for the voltage measurement across the resistive circuit 11, 21 corresponding, the two son for the voltage measurement being arranged in parallel of the two son for the power supply.
  • each bi-probe 0 further comprises the layer 3 based on a thermal insulating material.
  • the layer 3 is interposed between the two mono-probes 1, 2 of the bi-probe 0, for example by gluing.
  • the bonding of a single-probe 1, 2 on the layer 3 may require an adhesive, for example suitable for bonding the layer 3 to a polyimide film constituting part of the encapsulant 13, 23 of each single-probe 1, 2.
  • the layer 3 has an area equal to or greater than that of each single-probe 1, 2.
  • the layer 3 creates a thermal resistance R TH between the two mono-probes 1, 2.
  • the thermal resistance R TH can determine, by itself and / or in good approximation, the thermal resistance Rs of the bi-probe 0.
  • the thermal resistance Rs of each bi-probe 0 can also be characterized by calibrations by heating. alternatively a mono-probe 1, 2, then the other 2, 1, to establish the relationships between the heat fluxes created (which are known by calculation) and the differences in temperature evolution created between the two single-probes 1, 2 (which are measured).
  • Such characterization is in particular envisaged when the bi-probe 0 is placed between two known and very different resistivity material bodies.
  • the bi-probe 0 thus has a thermal resistance Rs function at least of the thickness e and the thermal conductivity ⁇ of the layer 3 interposed between the two mono-probes 1,2.
  • the equilibrium temperatures of the mono-probes 1, 2 of the bi-probe 0 may be different, or even independent, of one another, in particular when different electrical intensities are applied to the resistive circuits 11 21.
  • the bi-probe 0 makes it possible to associate thermal flows passing therethrough with temperature differences, or temperature variation differences, between the two mono-probes 1, 2.
  • each resistive circuit 11, 21 is intended to be bonded, in particular from its pair of connectors and by wire links 12, 22, and if necessary through the encapsulant 13, 23, on the one hand to the power supply device 10, on the other hand to the measuring device 20.
  • the power supply device 10 allows independent and coordinated power supply, for example direct current, of each of the single-probe 1, 2.
  • the measuring device 20 allows independent measurements of the voltage at the terminals of the resistive circuit 11, 21 of each of the single-probes 1, 2, and possibly electrical current in the resistive circuit 11, 21 of each of the single-probes 1, 2.
  • the independence of the supply means that it is possible to deposit variable and different powers as a function of time in each resistive circuit 11, 21 of each of the mono-probes 1, 2.
  • the independence of the voltage measurements, and possibly of the current means that it is possible to measure the voltage, and possibly the current, and / or the evolution of the voltage, and possibly the evolution of the current, and hence to calculate the temperature and / or the evolution of the temperature, of a mono 1, 2 regardless of the temperature and / or the change in the temperature of the other single-probe 2, 1.
  • the coordination of the supply means that it is possible to apply controlling the supply of each mono-probe 1, 2 according to the supply of the other mono-probe 2, 1 according to determined strategies.
  • the measuring device 20 used may be chosen to measure the parameter not imposed, and therefore unknown, by the feed device 10.
  • the feed device 10 is a feed device.
  • the measuring device 20 is a voltmeter measuring the voltage across the resistive circuit 11, 21, so that the law of ohm makes it possible to go back to the resistor R T of the resistive circuit 11, 21, then to go up, via the law of ad hoc evolution , to the temperature T1 , T2 of the monoprobe 1, 2 including the resistive circuit 11, 21.
  • the intensity in each resistive circuit 11, 21 can also be measured by the measuring device 20.
  • the method 100 withstands an error that would be related to the power supply by the device. feed 10 or at a in the communication with the supervision device 30 of the intensity value of the current deposited in each resistive circuit 11, 21 by the supply device 20.
  • a supervision device 30 for the feeder 10 and the measuring device 20.
  • the supervisory device 30 may comprise digital processing means, such as a microprocessor or microcontroller, or an analog processing device. It may in particular control the current measurements and / or the temperature calculations T1 , T2 of each monoprobe 1, 2 continuously or sampled, for example with a sampling rate of between one and ten measurements per second.
  • the supervision device 30 can be further configured to detect that a steady state has been reached in the resistance or temperature evolution of each single-probe 1, 2 towards a resistance or an equilibrium temperature, respectively .
  • the steady state can be considered as reached when a standard deviation calculated by the supervision device 30 on the resistance or temperature values T1 , T2 passes below a predefined threshold value.
  • the equilibrium temperatures of each single-probe 1, 2 depend on the thermal environment of each single-probe 1, 2, and depend at least on the temperatures Tf and Tf ' of the fluids f and f 'flowing on both sides of the wall 40 of the heat exchanger.
  • At least two of the power supply 10, measurement 20 and supervision devices 30 may be integrated together so as to form only one device fulfilling the functions of each of the integrated devices.
  • the method 100 for evaluating at least one operating condition of a heat exchanger according to the third aspect of the invention is described below with reference to figures 7 and 8 attached.
  • the thermal resistance Rp of the wall 40 can be assumed invariant in time and be a reference thermal resistance ; however, as discussed below, the method can advantageously be used to diagnose a degradation of the wall resulting in a change in its thermal resistance Rp especially with respect to its reference thermal resistance.
  • the thermal resistance Rs of the bi-probe 0 may in good approximation be considered equal to the thermal resistance R TH of the layer 3 thermally insulating the mono-probes 1, 2 between them; alternatively, the thermal resistance Rs of the bi-probe 0 can be measured.
  • the dual temperature probe 0 is preferably arranged, as shown in FIG. figure 7 on the wall 40 of the heat exchanger.
  • the bi-probe 0 is for example disposed at a location of the wall 40 through which a heat transfer, preferably to a functional destination, takes place between the two fluids f and f 'circulating on either side of the wall 40 and on which fouling 50, 50 'can be deposited.
  • a heat transfer preferably to a functional destination
  • the bi-probe 0 is preferably disposed on the wall 40 when it is not covered with fouling 50, 50 'or on a non-fouled portion of the wall 40, so as to be directly in contact with the wall 40.
  • the bi-probe 0 may indifferently be arranged on one side or the other of the wall 40.
  • the fouling 50, 50 ' may be intended to be formed at least in part on the bi-probe 0 and extend from all sides around of it along the wall 40.
  • this fouling 50 may be in accordance.
  • the fouling 50 formed on one side of the wall 40 may be of a different nature from the fouling 50 'formed on the other side of the wall 40.
  • the nature and / or the thickness of the fouling 50, 50 may depend on the nature of the fluids f and f ' , respectively, as well as their temperatures Tf and Tf'.
  • the nature and / or the thickness of the fouling 50, 50 ' may also depend on the geometry and / or the nature and / or the surface condition of the wall 40.
  • the nature and / or the thickness of the fouling 50, 50 ' may depend on the flow regimes of the fluids f and f ' flowing on either side of the wall 40. Countercurrent flows of the fluids f and f 'are illustrated in FIG. figure 7 , but the method according to the invention also applies in other flow configurations, and especially for co-current flows.
  • the bi-probe 0 is disposed on one side of the wall 40 and a first single-probe 1 is disposed on the wall 40 via the other single-probe 2 and the layer 3 interposed.
  • This first series of steps 110 to 130 is carried out from a first moment t1, then a second series of corresponding steps 140 to 160, preferably again coordinated by the supervision device 30, is performed starting from a second moment t2.
  • This second series of steps 140 to 160 makes it possible to calculate 160 the temperature T1 (t2), T2 (t2) of each single-probe 1, 2.
  • the second series of steps is only performed once the first series completed, or at least once the measures 120 have been completed.
  • the method 100 then further comprises at least the following step: calculating 170, as a function of the thermal resistance Rs of the bi-probe 0, the thermal resistance Rp of the wall 40 and the temperatures T1 (t1), T2 (t1), T1 (t2) and T2 (t2) of the mono-probes 1, 2, at least one of the temperatures Tf and Tf ' of the fluids f and f ' and the thermal resistors R and R ' on each side of the wall 40 .
  • the electric current supplying 110, 140 the resistive circuit 11 of the first single-probe 1 consists of a power supply and is parametered so as to inducing a zero temperature change of the first single-probe 1.
  • the intensity of the electric current supplying 110, 140 the resistive circuit 11 is then substantially equal to 1 mA.
  • Such intensity or electrical power is supplied to the resistive circuit 11 to induce a voltage difference and to be able to go back to its temperatures T1 (t1) and T1 (t2) by the ohm law and the law ad hoc evolution .
  • one or the other of the power supply stages 110, 140 of the resistive circuit 11 may comprise the application of a power supply current of zero intensity starting from one or the other of the first instant t1 and the second instant t2. It should also be considered that one of the voltage measurement steps 120, 150 across the resistive circuit 11 may consist of taking up the result of the other of the voltage measurement steps 150, 120 across the resistive circuit 11.
  • the second mono-probe 2 when the second mono-probe 2 dissipates thermal energy, an increase in its temperature T2 makes it possible to establish a thermal equilibrium with its environment.
  • the temperature difference ⁇ T between the initial temperature of the second mono-probe 2 without power dissipation and the equilibrium temperature T2 (t1) or T2 (t2) with power dissipation is a function of the dissipated energy and the thermal resistances. of the environment.
  • a fouling 50 and / or 50 ' adds a thermal resistance Re and / or R'e in the environment of the bi-probe 0, it is possible to detect it by the modification induced on the temperature difference ⁇ T.
  • a power P2 (t1) is deposited in the second monoprobe 2.
  • a power P2 (t1) is deposited in the second monoprobe 2.
  • the stationary thermal regime of the temperature change of the second monoprobe 2 is reached, calculates 130 the temperature T2 (t1).
  • a power P2 (t2) is deposited in the second monoprobe 2.
  • the temperature T2 (t2) is calculated 160 .
  • the power P2 (t2) is not necessarily different from the power P2 (t1).
  • the powers P2 (t1) and P2 (t2) are simply not applied simultaneously, but alternately.
  • the power P2 (t2) is preferably different from the power P2 (t1) ; this makes it possible to take full advantage of the robustness of the analytical approach on which the invention is based and to make the calculations even more reliable by eliminating any measurement inaccuracy 120, 150 following the application 110, 140 of the one or other of the powers P2 (t1) and P2 (t2).
  • the powers P2 (t1) and P2 (t2) are preferably applied 110, 140 sufficiently close to each other in time, for example to a few tens of seconds apart, for example with an interval of less than 60 seconds, more particularly less than 30 seconds and preferably equal to 10 seconds, in order to neglect a variation of the thermal resistances R and R ' on each side of the wall 40.
  • a lower limit of the time between the successive applications of the powers P2 (t1) and P2 (t2) can be the time necessary to reach the stationary regime of the temperature evolution of each resistive circuit 11, 12; this time being generally less than 10 seconds, and for example between 2 and 8 seconds.
  • the powers P2 (t1) and P2 (t2) are typically between 1 and 10 W. They are chosen sufficiently low not to call into question the general thermal equilibrium of the heat exchanger, and especially not to alter the temperatures Tf and Tf ' fluids f and f' . This can be ensured by parameterizing the supply 110, 140 so that the power dissipated by the bi-probe 0 is of the order of 0.02% of the thermal power exchanged through the wall 40 of the 'heat exchanger.
  • the figure 7 illustrates the schematic diagram and the meaning of the notations employed below. It should be noted that, for the descriptions given here, the temperatures are given as average temperatures of the layer of material to which they are attached and that the heat flows are given through an interface between these layers.
  • the thermal resistance R s (in m 2 ⁇ K ⁇ W -1 ) of the bi-probe 0 and / or the thickness e (in meters) and the thermal conductivity ⁇ (in W ⁇ m -1 ⁇ K -1 ) bi-probe 0 are known.
  • Tf ' c t 2 T 2 t 1 - c t 1 T 2 t 2 c t 2 - c t 1
  • R ' T 2 t 1 c t 1 - R p - R s - c t 2 T 2 t 1 - c t 1 T 2 t 2 c t 1 c t 2 - c t 1 .
  • the heat flux ⁇ (in W / m 2 ) passing through the wall 40 can also be known via a zero deposited power measurement P2. Indeed, if P2 is zero, the heat flux ⁇ is equal to the flux ⁇ 2, b, either 1 R s T 1 t 1 - T 2 t 1 .
  • the successive measurements 120, 150 with the bi-probe 0 make it possible to obtain the temperatures Tf and Tf ' of the fluids f and f' , the thermal resistances R and R ' on each side of the wall 40, as well as the flow thermal ⁇ passing through the wall 40.
  • the method 100 makes it possible to discriminate on which side (s) of the wall 40 a fouling has been deposited, for example since a nominal or previous evaluation of the operating conditions of the heat exchanger.
  • the method 100 may further comprise the step of: calculating 200 at least one of the fouling thicknesses 50, 50 ', as a function of a respective one of the fouling resistances Re and R'e of each side of the wall 40 and one of the thermal conductivities of the fouling on each side of the wall 40.
  • the use of the bi-probe 0 as described above, according to which a deposit of power P2 in the monoprobe 2 is made, 110, 140, makes it possible to determine a number of quantities of interest for the engineer ( Tf, Tf ', R, R', ).
  • Most of the analytical developments presented above are provided in this context. A deposition of power in the single-probe 1 would lead to similar, albeit slightly different, analytical developments, which would ultimately determine the same amounts of interest by making the same assumptions. The wording of these developments not presented here is considered to fall within the ordinary skill of those skilled in the art, in view of the analytical developments provided.
  • steps 110 to 130 and 120 to 150 may be repeated from two instants t3 and t4 different from each other and subsequent to times t1 and t2.
  • Each of the calculation steps 170 to 200 can therefore also be repeated.
  • a possible difference between the results of each of the calculations 170 to 200 may be representative of an evolution, or even a deterioration, of the operating conditions of the heat exchanger and may in particular enable decision-making to be made as to performing a reclamation or replacement operation wall 40, or even the heat exchanger.
  • a repetition of steps 110 to 170, or even steps 180 to 200, of the method 100 may be programmed for example in intervals of 10 minutes, 24 hours, 1 month, 1 year, etc. and / or for example from a first operation of the heat exchanger and after each operation of maintenance and maintenance of the heat exchanger.
  • an application example is given hereinafter which aims to determine whether or not the wall 40 of the heat exchanger has degraded between two successive implementations of the process 100, for example between a first operation of the heat exchanger and a first operation of maintenance and maintenance of the heat exchanger or between two operations of maintenance and maintenance of the heat exchanger.
  • the wall 40 may be assumed not to be covered with fouling 50, 50 ', so that the only thermal resistances involved in the heat transfer through the wall 40 are those of the bi-probe 0, the wall 40 and the convection regimes, namely Rcv and R'cv.
  • a difference between the thermal resistances R and R ' calculated 170 during a first implementation of the method and the thermal resistances R and R ' calculated 170 during a second implementation of the method, as a function of the same reference value of the thermal resistance Rp of the wall 40, may reflect a variation of this reference value, and therefore can be used to quantify a degradation of the wall 40, and moreover to discriminate on which side (s) of the wall this degradation has occurred, depending on whether the thermal resistance R and / or the thermal resistance R ' varied.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Description

DOMAINE TECHNIQUE DE L'INVENTIONTECHNICAL FIELD OF THE INVENTION

L'invention concerne le domaine des dispositifs et procédés sièges de transferts thermiques où les parois peuvent, à certains moments, être l'objet de phénomènes d'encrassement ou de dégradation, par exemple par perte de matière liée à leur corrosion ou par oxydation. Sont concernés l'industrie chimique, le secteur de l'énergie, incluant le secteur pétrolier, le secteur de l'agro-alimentaire, le secteur des transports, l'industrie du froid, de la climatisation, etc.The invention relates to the field of devices and processes heat transfer seats where the walls can, at times, be the subject of fouling phenomena or degradation, for example by loss of material due to their corrosion or oxidation. This concerns the chemical industry, the energy sector, including the oil sector, the agri-food sector, the transport sector, the cold industry, air conditioning, etc.

L'invention concerne plus particulièrement un dispositif et un procédé d'évaluation des conditions de fonctionnement d'un échangeur thermique incluant tout type de technologies, tel qu'un condenseur, un évaporateur, un échangeur-réacteur, etc.The invention relates more particularly to a device and a method for evaluating the operating conditions of a heat exchanger including any type of technology, such as a condenser, an evaporator, a reactor-exchanger, etc.

ÉTAT DE LA TECHNIQUESTATE OF THE ART

La simple mesure de quantités physiques en entrée et en sortie d'un échangeur thermique (mesures de pression et de température, mesure du débit) permet de remonter à la performance moyenne globale du transfert thermique dans l'échangeur thermique. Toutefois, cela ne permet pas d'avoir des indications sur la qualité du transfert thermique local et en particulier de détecter une perte d'efficacité locale, par exemple due à un encrassement local d'une paroi de transfert thermique.The simple measurement of physical quantities at the inlet and the outlet of a heat exchanger (pressure and temperature measurements, flow measurement) makes it possible to go back to the overall average heat transfer performance in the heat exchanger. However, this does not allow to have indications on the quality of the local heat transfer and in particular to detect a loss of local efficiency, for example due to local fouling of a heat transfer wall.

Pour obtenir ce type d'indications locales, il faut mettre en oeuvre des dispositifs de mesures locaux.To obtain this type of local indication, it is necessary to implement local measurement devices.

De nombreux dispositifs comprenant une sonde de température sont dédiés à la mesure directe ou indirecte des flux thermiques locaux et/ou de températures locales et, par là même, permettent de remonter au coefficient d'échange thermique local, et donc de donner des indications sur les conditions de fonctionnement locales des échangeurs thermiques. Trois dispositifs de ce type sont discutés ci-dessous.Many devices including a temperature probe are dedicated to the direct or indirect measurement of local heat fluxes and / or local temperatures and, therefore, allow to go up to the local heat exchange coefficient, and thus to give indications on the local operating conditions of the heat exchangers. Three such devices are discussed below.

Le document WO 01/94876 A1 propose notamment un dispositif et un procédé pour suivre l'encrassement d'une cuve de combustion d'un échangeur-réacteur à énergie fossile. Selon cette méthode, on évalue une valeur de résistance d'un réseau en matériau conducteur qui est par exemple constitué par les parois des tubes d'un échangeur. A cet effet, ce réseau est soumis à un ou plusieurs signaux électriques donnés. La valeur de résistance ainsi calculée est comparée à une valeur de résistance nominale déterminée sur le même réseau à un instant de référence antérieur. Si la valeur de résistance ainsi obtenue est supérieure à la valeur de résistance nominale, on considère qu'il y a encrassement. Cette solution a en particulier l'inconvénient de ne pouvoir être utilisée qu'avec une contribution des phénomènes de convection thermique (fonctionnement du réacteur à un débit en énergie fossile et à une température de la cuve donnés) qui est celle avec laquelle la mesure de la valeur de résistance nominale a été mesurée.The document WO 01/94876 A1 proposes in particular a device and a method for monitoring the fouling of a combustion tank of a fossil fuel exchanger-reactor. According to this method, a resistance value of a network of conducting material is evaluated, for example constituted by the walls of the tubes of an exchanger. For this purpose, this network is subjected to one or more given electrical signals. The thus calculated resistance value is compared to a nominal resistance value determined on the same network at a previous reference time. If the resistance value thus obtained is greater than the nominal resistance value, it is considered that there is fouling. This solution has the particular disadvantage of being able to be used only with a contribution of thermal convection phenomena (operation of the reactor at a flow rate of fossil energy and at a given tank temperature) which is the one with which the measurement of the nominal resistance value was measured.

Le document WO 2007/099240 A1 divulgue un échangeur thermique à plaques empilées incluant un dispositif d'évaluation de son état d'encrassement. Ce dispositif d'évaluation comporte une résistance électrique, qui est thermiquement reliée à la plaque située à l'extrémité de l'empilement et qui est destinée à être parcourue par un courant électrique paramétré pour amplifier le flux de chaleur véhiculé au sein de l'échangeur. Le dispositif d'évaluation comporte également des moyens de mesure de la température (thermocouples) au voisinage direct de ladite résistance électrique. La mesure locale de la température permet de comparer l'évolution de la température au voisinage de la résistance, avec des profils de référence. En fonction de l'écart par rapport aux profils de référence, il est possible de déduire des modifications de capacité thermique de la plaque. Ces modifications étant fonction de l'encrassement de la plaque, le dispositif permet d'évaluer cet encrassement. Cette solution a en particulier l'inconvénient de modifier temporairement l'échange thermique local. D'autre part, le fait que la mesure de température est réalisée à l'opposé de la surface où est généré le flux supplémentaire rend complexe l'interprétation de cette mesure car elle n'est impactée que par la propagation de la perturbation du flux et non par l'augmentation du flux elle-même.The document WO 2007/099240 A1 discloses a stacked plate heat exchanger including a device for evaluating its fouling state. This evaluation device comprises an electrical resistance, which is thermally connected to the plate located at the end of the stack and which is intended to be traversed by a parameterized electric current to amplify the heat flow conveyed within the exchanger. The evaluation device also comprises means for measuring the temperature (thermocouples) in the direct vicinity of said electrical resistance. The local measurement of the temperature makes it possible to compare the evolution of the temperature in the vicinity of the resistance, with reference profiles. Depending on the deviation from the reference profiles, it is possible to deduce changes in the thermal capacity of the plate. These modifications being a function of the clogging of the plate, the device makes it possible to evaluate this fouling. This solution has the particular disadvantage of temporarily modifying the local heat exchange. On the other hand, the fact that the temperature measurement is performed opposite the surface where the additional flux is generated makes the interpretation of this measurement complex because it is only impacted by the propagation of the flow perturbation. and not by increasing the flow itself.

Le document WO 2009/153323 A1 divulgue un dispositif et un procédé pour la détection et/ou la mesure de l'encrassement dans un échangeur thermique. Le procédé consiste à mesurer la valeur résistive d'une sonde de température disposée au niveau d'une paroi de l'échangeur. Plus particulièrement, pendant deux durées successives, la résistance est soumise à deux niveaux de puissance constante. Le premier niveau de puissance P1, choisi de sorte que le flux de chaleur provoqué par effet Joule ait une influence sur la paroi de l'échangeur et non sur la couche d'encrassement lorsqu'elle existe, est inférieur au second niveau de puissance P2 qui est choisi de sorte que le flux de chaleur provoqué par effet Joule ait un impact à la fois sur la paroi de l'échangeur et sur la couche d'encrassement lorsqu'elle existe. Les durées d'application des puissances et leur enchaînement sont choisis de manière à s'assurer de la stabilité des conditions de fonctionnement et à atteindre un régime thermique stationnaire à la fin de l'application des puissances P1 et P2. Des mesures de valeurs résistives sont respectivement effectuées à la fin de l'application des puissances. La différence des mesures de valeurs résistives constitue alors une mesure de la résistance thermique de la couche d'encrassement. Par conséquent, la différence des mesures de valeurs résistives constitue une valeur caractéristique du niveau d'encrassement de la paroi de l'échangeur.The document WO 2009/153323 A1 discloses a device and method for the detection and / or measurement of fouling in a heat exchanger. The method consists in measuring the resistive value of a temperature probe disposed at a wall of the exchanger. More particularly, for two successive periods, the resistance is subjected to two constant power levels. The first power level P1, chosen so that the heat flow caused by the Joule effect has an influence on the wall of the exchanger and not on the fouling layer when it exists, is lower than the second power level P2. which is chosen so that the heat flow caused by the Joule effect has an impact both on the wall of the exchanger and on the fouling layer when it exists. The duration of application of the powers and their sequence are chosen so as to ensure the stability of the operating conditions and to reach a stationary thermal regime at the end of the application of powers P1 and P2. Measurements of resistive values are respectively made at the end of the application of the powers. The difference in the resistive value measurements then constitutes a measure of the thermal resistance of the fouling layer. Therefore, the The difference in the resistive value measurements constitutes a characteristic value of the level of fouling of the wall of the exchanger.

Les trois dispositifs discutés ci-dessus sont dédiés à la mesure de températures locales et/ou de flux thermiques locaux et, par là même, permettent de remonter au coefficient d'échange thermique local, et donc d'évaluer les conditions de fonctionnement locales d'un échangeur thermique. Toutefois, chacune de ces évaluations nécessite de faire des hypothèses fortes sur l'environnement thermique de la sonde de température pour extraire, des mesures physiques, la valeur locale du coefficient d'échange. Par ailleurs, aucune de ces évaluations ne permet de discriminer de quel côté de la paroi se situe l'encrassement. En outre, une fois la valeur locale du coefficient d'échange obtenue, il n'est pas possible, si les termes de convection varient, d'identifier les contributions respectives des phénomènes de convection et de conduction (dans les parois et dans les éventuelles couches d'encrassement) parmi les diverses contributions au coefficient d'échange.The three devices discussed above are dedicated to the measurement of local temperatures and / or local thermal flows and, therefore, allow to go back to the local heat exchange coefficient, and thus to evaluate the local operating conditions of a heat exchanger. However, each of these evaluations requires making strong assumptions about the thermal environment of the temperature probe to extract, from physical measurements, the local value of the exchange coefficient. Moreover, none of these evaluations makes it possible to discriminate on which side of the wall is the fouling. Moreover, once the local value of the exchange coefficient has been obtained, it is not possible, if the convection terms vary, to identify the respective contributions of the convection and conduction phenomena (in the walls and in the possible ones). layers of fouling) among the various contributions to the exchange coefficient.

Il est également connu, du document US 2011/0051776 A1 , un dispositif utilisé pour l'estimation de la température des tissus profonds, et, du document WO 2010/082006 A1 , un système de mesure ou de détection de l'encrassement d'un réacteur, comme par exemple un échangeur thermique, ou d'une conduite contenant un fluide.It is also known from the document US 2011/0051776 A1 , a device used for estimating the temperature of deep tissues, and, of the document WO 2010/082006 A1 , a system for measuring or detecting the fouling of a reactor, such as for example a heat exchanger, or a pipe containing a fluid.

Un objet de la présente invention est de répondre, au moins en partie, aux limitations précédemment exposées.An object of the present invention is to respond, at least in part, to the limitations previously set forth.

Les autres objets, caractéristiques et avantages de la présente invention apparaîtront à l'examen de la description suivante et des dessins d'accompagnement. Il est entendu que d'autres avantages peuvent être incorporés.Other objects, features and advantages of the present invention will become apparent from the following description and accompanying drawings. It is understood that other benefits may be incorporated.

RÉSUMÉ DE L'INVENTIONSUMMARY OF THE INVENTION

Pour atteindre cet objectif, selon un premier aspect, la présente invention prévoit une bi-sonde de température comprenant :

  • deux mono-sondes de température, comprenant chacune un circuit résistif à base d'un matériau électriquement conducteur thermosensible, chaque circuit résistif étant destiné à être lié à un dispositif de mesure de tension électrique, et
  • une couche à base d'un matériau thermiquement isolant intercalée entre les mono-sondes,
de sorte que la bi-sonde présente une résistance thermique Rs fonction de l'épaisseur et de la conductivité thermique de la couche intercalée,
la bi-sonde étant essentiellement telle que chaque circuit résistif est en outre destiné à être lié à un dispositif d'alimentation électrique,
de sorte que des températures d'équilibre des mono-sondes puissent être différentes l'une de l'autre, lorsque l'on applique des courants électriques d'intensités différentes aux circuits résistifs.To achieve this objective, according to a first aspect, the present invention provides a dual-temperature probe comprising:
  • two mono-temperature probes, each comprising a resistive circuit based on a thermally sensitive electrically conductive material, each resistive circuit being intended to be connected to an electrical voltage measuring device, and
  • a layer based on a thermally insulating material interposed between the single-probes,
so that the bi-probe has a thermal resistance Rs as a function of the thickness and the thermal conductivity of the interlayer,
the bi-probe being essentially such that each resistive circuit is further intended to be connected to a power supply device,
so that equilibrium temperatures of the single-probes may be different from each other, when applying electric currents of different intensities to the resistive circuits.

Eventuellement, chaque mono-sonde comprend en outre au moins un encapsulant enrobant au moins en partie le circuit résistif ; l'encapsulant est à base d'un matériau diélectrique, de préférence thermostable.Optionally, each single-probe further comprises at least one encapsulant encapsulating at least part of the resistive circuit; the encapsulant is based on a dielectric material, preferably thermostable.

Chaque mono-sonde a ainsi deux fonctions, celle de dissipateur thermique et celle de mesure résistive de température. La bi-sonde selon le premier aspect de l'invention comprend un empilement de deux mono-sondes séparées par une couche thermiquement isolante. Cette couche crée une résistance thermique entre les deux mono-sondes, afin que les températures d'équilibre des mono-sondes puissent être indépendantes ou du moins différentes l'une de l'autre, en particulier lorsque l'on applique des courants électriques d'intensités différentes aux circuits résistifs. De la sorte, la bi-sonde permet d'associer des flux thermiques la traversant à des écarts de température, ou à des écarts d'évolution de température, entre les deux mono-sondes.Each single-probe thus has two functions, that of heat sink and that of resistive temperature measurement. The bi-probe according to the first aspect of the invention comprises a stack of two mono-probes separated by a layer thermally insulating. This layer creates a thermal resistance between the two mono-probes, so that the equilibrium temperatures of the single-probes can be independent or at least different from each other, in particular when applying electrical currents of different intensities to the resistive circuits. In this way, the bi-probe makes it possible to associate thermal flows passing therethrough with temperature differences, or with variations in temperature evolution, between the two single-probes.

Un deuxième aspect de la présente invention concerne un système d'évaluation d'au moins une condition de fonctionnement d'un échangeur de chaleur comprenant :

  • au moins une bi-sonde de température telle qu'introduit ci-dessus,
  • une paroi d'un échangeur de chaleur à travers laquelle un transfert thermique est destiné à s'opérer entre deux fluides f et f' circulant de part et d'autre de la paroi et sur laquelle est susceptible de se déposer un encrassement,
  • un dispositif d'alimentation électrique,
  • un dispositif de mesure de courant électrique, et
  • un dispositif de supervision du dispositif d'alimentation et du dispositif de mesure.
A second aspect of the present invention relates to a system for evaluating at least one operating condition of a heat exchanger comprising:
  • at least one bi-temperature probe as introduced above,
  • a wall of a heat exchanger through which a heat transfer is intended to take place between two fluids f and f 'flowing on either side of the wall and on which fouling may be deposited,
  • a power supply device,
  • an electrical current measuring device, and
  • a device for supervising the supply device and the measuring device.

La bi-sonde de température est disposée sur l'un parmi un premier côté et un second côté de la paroi de l'échangeur de chaleur ; la paroi présente une résistance thermique Rp de référence.The dual temperature probe is disposed on one of a first side and a second side of the wall of the heat exchanger; the wall has a reference thermal resistance Rp .

Le système est essentiellement tel que le dispositif d'alimentation électrique est configuré pour alimenter chaque circuit résistif de la bi-sonde et que le dispositif de mesure de courant électrique est configuré pour mesurer le courant électrique circulant dans chaque circuit résistif de la bi-sonde, de sorte que des températures d'équilibre des mono-sondes puissent être différentes l'une de l'autre, lorsque l'on applique des courants électriques d'intensités différentes aux circuits résistifs, et puissent être mesurées indépendamment l'une de l'autre.The system is essentially such that the power supply device is configured to supply each resistive circuit of the bi-probe and that the electrical current measuring device is configured to measure the electric current flowing in each resistive circuit of the bi-probe. so that the equilibrium temperatures of the single-probes may be different from one another, when applying electric currents of different intensities to the resistive circuits, and may be measured independently of one another. 'other.

Un troisième aspect de la présente invention concerne un procédé d'évaluation d'au moins une condition de fonctionnement d'un échangeur de chaleur mettant en oeuvre un système d'évaluation selon le deuxième aspect de l'invention. Le procédé selon le troisième aspect de l'invention comprend au moins les étapes suivantes, de préférence coordonnées par le dispositif de supervision :

  • à compter d'un premier instant t1 :
    • alimenter les circuits résistifs avec des courants électriques d'intensités différentes,
    • mesurer la tension aux bornes de chacun des circuits résistifs, et éventuellement le courant électrique dans chacun des circuits résistifs, puis
    • calculer la température T1(t1), T2(t1) de chaque mono-sonde au moins en fonction de la mesure de tension aux bornes du circuit résistif correspondant, et
  • à compter d'un deuxième instant t2, différent du premier instant t1 :
    • alimenter les circuits résistifs avec des courants électriques d'intensités différentes,
    • mesurer la tension aux bornes de chacun des circuits résistifs, et éventuellement le courant électrique dans chacun des circuits résistifs, puis
    • calculer la température T1(t2), T2(t2) de chaque mono-sonde au moins en fonction de la mesure de tension aux bornes du circuit résistif correspondant.
A third aspect of the present invention relates to a method of evaluating at least one operating condition of a heat exchanger implementing an evaluation system according to the second aspect of the invention. The method according to the third aspect of the invention comprises at least the following steps, preferably coordinated by the supervision device:
  • from a first moment t1:
    • supply the resistive circuits with electrical currents of different intensities,
    • measuring the voltage at the terminals of each of the resistive circuits, and possibly the electrical current in each of the resistive circuits, and then
    • calculating the temperature T1 (t1), T2 (t1) of each single-probe at least as a function of the voltage measurement at the terminals of the corresponding resistive circuit, and
  • from a second moment t2, different from the first moment t1:
    • supply the resistive circuits with electrical currents of different intensities,
    • measuring the voltage at the terminals of each of the resistive circuits, and possibly the electrical current in each of the resistive circuits, and then
    • calculate the temperature T1 (t2), T2 (t2) of each single-probe at least as a function of the voltage measurement at the terminals of the corresponding resistive circuit.

Le procédé comprend en outre au moins l'étape suivante :

  • calculer, en fonction de la résistance thermique Rs de la bi-sonde, de la résistance thermique Rp de la paroi et des températures T1(t1), T2(t1), T1(t2) et T2(t2) des mono-sondes, au moins l'une des conditions de fonctionnement suivantes : la température Tf du fluide f du premier côté de la paroi, la résistance thermique R du premier côté de la paroi, la température Tf' du fluide f' du second côté de la paroi et la résistance thermique R' du second côté de la paroi.
The method further comprises at least the following step:
  • calculate, as a function of the thermal resistance Rs of the bi-probe, the thermal resistance Rp of the wall and the temperatures T1 (t1), T2 (t1), T1 (t2) and T2 (t2) of the single-probes, at least one of the following operating conditions: the temperature Tf of the fluid f of the first side of the wall, the thermal resistance R of the first side of the wall, the temperature Tf ' of the fluid f ' of the second side of the wall and the thermal resistance R 'of the second side of the wall.

Qu'un encrassement se soit déposé d'un côté ou des deux côtés de la paroi, le procédé selon le troisième aspect de l'invention permet d'évaluer au moins l'une des conditions de fonctionnement suivantes :

  • la température Tf du fluide f circulant du premier côté de la paroi,
  • la température Tf' du fluide f' circulant du second côté de la paroi,
  • la présence ou non d'un encrassement du premier côté de la paroi, et
  • la présence ou non d'un encrassement du second côté de la paroi,
du fait que chacune des résistances thermiques R et R' calculées est proportionnelle à une somme de résistances thermiques de convection et éventuellement d'encrassement Rcv+Re et R'cv+R'e. Whether fouling has been deposited on one side or both sides of the wall, the method according to the third aspect of the invention makes it possible to evaluate at least one of the following operating conditions:
  • the fluid temperature Tf f flowing from the first side of the wall,
  • the temperature Tf ' of the fluid f ' flowing from the second side of the wall,
  • the presence or absence of fouling on the first side of the wall, and
  • the presence or absence of fouling on the second side of the wall,
since each of the thermal resistances R and R ' calculated is proportional to a sum of convection thermal resistances and possibly fouling Rcv + Re and R'cv + R'e.

Le procédé permet ainsi de discriminer de quel(s) côté(s) de la paroi un encrassement s'est déposé, par exemple depuis une évaluation nominale ou antérieure des conditions de fonctionnement de l'échangeur de chaleur.The method thus makes it possible to discriminate on which side (s) of the wall a fouling has been deposited, for example since a nominal or prior evaluation of the operating conditions of the heat exchanger.

Un quatrième aspect de la présente invention concerne un produit programme d'ordinateur comprenant des instructions, qui, lorsqu'elles sont interprétées et exécutées par au moins un processeur, par exemple du dispositif de supervision, effectuent au moins l'étape de calcul des températures Tf et Tf' des fluides et des résistances thermiques R et R' de chaque côté de la paroi selon le procédé concerné par le troisième aspect de l'invention. En variante, le quatrième aspect de la présente invention concerne un média non-transitoire lisible par un ordinateur, comprenant des instructions, qui, lorsqu'elles sont interprétées et exécutées par au moins un processeur, par exemple du dispositif de supervision, effectuent au moins l'étape de calcul des températures Tf et Tf' des fluides et des résistances thermiques R et R' de chaque côté de la paroi selon le procédé concerné par le troisième aspect de l'invention.A fourth aspect of the present invention relates to a computer program product comprising instructions, which, when interpreted and executed by at least one processor, for example the supervisory device, perform at least the temperature calculation step. Tf and Tf ' fluids and thermal resistors R and R ' on each side of the wall according to the method concerned by the third aspect of the invention. As a variant, the fourth aspect of the present invention relates to a computer-readable non-transitory medium, comprising instructions, which, when interpreted and executed by at least one processor, for example the supervisory device, perform at least one the step of calculating the temperatures Tf and Tf ' of the fluids and the thermal resistances R and R ' on each side of the wall according to the method concerned by the third aspect of the invention.

BRÈVE DESCRIPTION DES FIGURESBRIEF DESCRIPTION OF THE FIGURES

Les buts, objets, ainsi que les caractéristiques et avantages de l'invention ressortiront mieux de la description détaillée d'un mode de réalisation de cette dernière qui est illustré par les dessins d'accompagnement suivants dans lesquels :

  • La FIGURE 1 est une représentation schématique en perspective d'un circuit résistif d'une mono-sonde d'une bi-sonde selon un mode de réalisation de l'invention ;
  • La FIGURE 2 est une représentation schématique en perspective d'une mono-sonde d'une bi-sonde selon un mode de réalisation de l'invention ;
  • La FIGURE 3 est une représentation schématique en perspective d'un assemblage d'une bi-sonde selon un mode de réalisation de l'invention ;
  • La FIGURE 4 est une représentation schématique en perspective d'une bi-sonde selon un mode de réalisation de l'invention ;
  • La FIGURE 5 représente la bi-sonde de la FIGURE 4 à laquelle ont été connectés un dispositif d'alimentation électrique et un dispositif de mesure de courant électrique selon un mode de réalisation de l'invention ;
  • La FIGURE 6 représente un système d'évaluation selon un mode de réalisation de l'invention comprenant la bi-sonde de la FIGURE 4, un dispositif d'alimentation électrique et un dispositif de mesure de courant électrique reliés à la bi-sonde, une paroi d'un échangeur thermique sur laquelle est disposée la bi-sonde et un dispositif de supervision relié aux dispositifs d'alimentation et de mesure ;
  • La FIGURE 7 représente schématiquement une vue en coupe transversale de la bi-sonde telle qu'illustrée sur la FIGURE 6 disposée sur la paroi de l'échangeur thermique ;
  • La FIGURE 8 est un ordinogramme de différentes étapes du procédé d'évaluation des conditions de fonctionnement d'un échangeur de chaleur selon un mode de réalisation de l'invention.
The objects, objects, as well as the features and advantages of the invention will become more apparent from the detailed description of an embodiment thereof which is illustrated by the following accompanying drawings in which:
  • The FIGURE 1 is a schematic representation in perspective of a resistive circuit of a single-probe of a bi-probe according to one embodiment of the invention;
  • The FIGURE 2 is a schematic perspective representation of a single probe of a bi-probe according to an embodiment of the invention;
  • The FIGURE 3 is a schematic representation in perspective of an assembly of a bi-probe according to one embodiment of the invention;
  • The FIGURE 4 is a schematic perspective view of a bi-probe according to an embodiment of the invention;
  • The FIGURE 5 represents the bi-probe of the FIGURE 4 to which have been connected a power supply device and an electrical current measuring device according to one embodiment of the invention;
  • The FIGURE 6 represents an evaluation system according to an embodiment of the invention comprising the bi-probe of the FIGURE 4 , a power supply device and an electrical current measurement device connected to the bi-probe, a wall of a heat exchanger on which the bi-probe is arranged and a supervision device connected to the power supply and control devices. measurement;
  • The FIGURE 7 schematically represents a cross-sectional view of the bi-probe as shown in FIG. FIGURE 6 disposed on the wall of the heat exchanger;
  • The FIGURE 8 is a flow chart of various steps of the method of evaluating the operating conditions of a heat exchanger according to one embodiment of the invention.

Les dessins sont donnés à titre d'exemples et ne sont pas limitatifs de l'invention. Ils constituent des représentations schématiques de principe destinées à faciliter la compréhension de l'invention et ne sont pas nécessairement à l'échelle des applications pratiques. En particulier, les épaisseurs relatives des différents éléments du système selon l'invention tels qu'illustrés sur la figure 6 ne sont pas représentatives de la réalité.The drawings are given by way of examples and are not limiting of the invention. They constitute schematic representations of principle intended to facilitate the understanding of the invention and are not necessarily at the scale of practical applications. In particular, the relative thicknesses of the various elements of the system according to the invention as illustrated in FIG. figure 6 are not representative of reality.

DESCRIPTION DÉTAILLÉE DE L'INVENTIONDETAILED DESCRIPTION OF THE INVENTION

Avant d'entamer une revue détaillée de modes de réalisation de l'invention, sont énoncées ci-après des caractéristiques optionnelles qui peuvent éventuellement être utilisées en association ou alternativement :

  • le procédé peut comprendre en outre l'étape suivante : calculer un flux thermique Φ échangé entre les fluides f et f' à travers la paroi en fonction des températures Tf et Tf' des fluides f et f' et des résistances thermiques R et R' ;
  • chaque mesure de tension, et éventuellement de courant électrique, est effectuée après qu'un régime stationnaire de l'évolution de l'une parmi une résistance du circuit résistif ou la température T1, T2 de la mono-sonde ait été atteint. L'atteinte du régime stationnaire est le cas échéant détecté à l'aide du dispositif de supervision. Les bilans thermiques utilisés pour le calcul des températures Tf et Tf' des fluides f et f' et des résistances thermiques R et R' reposant sur l'hypothèse d'un régime stationnaire de l'évolution en température de chaque mono-sonde, ce calcul s'en trouve fiabilisé ;
  • chacune des différences entre les intensités des courants électriques alimentant les circuits résistifs est paramétrée de sorte à induire une différence de températures T2(t1)-T1(t1) et T2(t2)-T2(t1) entre les mono-sondes perceptible par le dispositif de mesure comme une différence entre les mesures de tension, et éventuellement de courant électrique ;
  • pour l'une des mono-sondes, l'intensité du courant électrique alimentant le circuit résistif correspondant est paramétrée de sorte à induire une évolution de température nulle de la mono-sonde ;
  • chacune des différences entre les intensités des courants électriques alimentant les circuits résistifs est paramétrée de sorte à ne pas modifier significativement les températures Tf et Tf' des fluides f et f'. L'on s'assure ainsi d'une part que les calculs des températures T1(t1), T2(t1), T1(t2) et T2(t2) des mono-sondes ne seront pas significativement entachés d'une erreur liée aux imprécisions de mesure du dispositif de mesure et que la mise en oeuvre du procédé d'évaluation n'influe pas sur les conditions de fonctionnement de l'échangeur de chaleur ;
  • la différence entre les intensités des courants électriques alimentant les circuits résistifs à compter du deuxième instant t2 est paramétrée de sorte à être différente de la différence entre les intensités des courants électriques alimentant les circuits résistifs à compter du premier instant t1 ;
  • les instants t1 et t2 sont choisis suffisamment proches dans le temps pour pouvoir négliger une variation des résistances thermiques R et R' de chaque côté de la paroi. L'on s'assure ainsi que les conditions de fonctionnement de l'échangeur de chaleur sont stables pendant leur évaluation ;
  • Le procédé peut comprendre en outre l'étape suivante : calculer au moins l'une parmi la résistance d'encrassement Re du premier côté de la paroi et la résistance d'encrassement R'e du second côté de la paroi, en fonction de l'une respective parmi la résistance de convection Rcv du premier côté de la paroi et la résistance de convection R'cv du second côté de la paroi. En faisant l'hypothèse que les régimes hydrauliques de l'échangeur de chaleur, au moins au niveau où est disposée la bi-sonde, sont stables dans le temps, autrement dit que les valeurs des résistances de convection Rcv et R'cv ne varient pas, par exemple par rapport à des valeurs nominales connues, il est possible d'évaluer les résistances d'encrassement Re et R'e de chaque côté de la paroi. Il est dès lors possible de calculer au moins l'une parmi l'épaisseur de l'encrassement du premier côté de la paroi et l'épaisseur de l'encrassement du second côté de la paroi, en fonction de l'une respective parmi la résistance d'encrassement Re du premier côté de la paroi et la résistance d'encrassement R'e du second côté de la paroi et de l'une respective parmi une conductivité thermique de l'encrassement du premier côté de la paroi et une conductivité thermique de l'encrassement du second côté de la paroi. Connaissant la nature des encrassements susceptibles de se former de chaque côté de la paroi, et donc les conductivités thermiques de ceux-ci, il est ainsi possible d'évaluer les épaisseurs des encrassements de chaque côté de la paroi ;
  • les étapes d'alimentation, de mesure et de calcul de température des mono-sondes peuvent être répétées à compter de deux instants t3 et t4 différents entre eux et ultérieurs aux instants t1 et t2, de sorte que le dépassement d'une valeur seuil prédéterminée par l'une au moins parmi :
    • ∘ une différence entre les résistances thermiques R calculées, et
    • ∘ une différence entre les résistances thermiques R' calculées,
    soit représentatif d'une évolution, et éventuellement d'une dégradation, des conditions de fonctionnement de l'échangeur de chaleur et le cas échéant permette une prise de décision quant à la réalisation d'une opération de remise en état ou de remplacement de la paroi, voire de l'échangeur de chaleur.
Before starting a detailed review of embodiments of the invention, are set forth below optional features that may optionally be used in combination or alternatively:
  • the method may further comprise the following step: calculating a heat flux Φ exchanged between the fluids f and f 'through the wall as a function of the temperatures Tf and Tf' of the fluids f and f 'and the thermal resistances R and R' ;
  • each measurement of voltage, and possibly of electric current, is carried out after a stationary regime of the evolution of one of a resistance of the resistive circuit or the temperature T1 , T2 of the single-probe has been reached. The reaching of the stationary regime is detected if necessary by means of the supervision device. The thermal balances used for the calculation of the temperatures Tf and Tf ' of the fluids f and f ' and of the thermal resistances R and R ' based on the assumption of a stationary regime of the temperature evolution of each single-probe, this calculation is made reliable;
  • each of the differences between the intensities of the electric currents supplying the resistive circuits is parameterized so as to induce a temperature difference T2 (t1) -T1 (t1) and T2 (t2) -T2 (t1) between the single-probes perceptible by the measuring device as a difference between voltage measurements, and possibly electrical current;
  • for one of the mono-probes, the intensity of the electric current supplying the corresponding resistive circuit is parameterized so as to induce a zero temperature change of the single-probe;
  • each of the differences between the intensities of the electric currents supplying the resistive circuits is parameterized so as not to modify significantly the temperatures Tf and Tf ' of the fluids f and f' . This ensures that the calculations of T1 (t1), T2 (t1), T1 (t2) and T2 (t2) temperatures of the single probes will not be significantly affected by an error related to measuring inaccuracies of the measuring device and that the implementation of the evaluation method does not affect the operating conditions of the heat exchanger;
  • the difference between the intensities of the electric currents supplying the resistive circuits as of the second instant t2 is parameterized so as to be different from the difference between the intensities of the electric currents supplying the resistive circuits as of the first instant t1;
  • instants t1 and t2 are chosen sufficiently close in time to be able to neglect a variation of the thermal resistances R and R ' on each side of the wall. This ensures that the operating conditions of the heat exchanger are stable during their evaluation;
  • The method may further comprise the step of: calculating at least one of the fouling resistance Re on the first side of the wall and the resistance fouling R'e of the second side of the wall, according to a respective one of the convection resistance Rcv of the first side of the wall and the convection resistor R'cv of the second side of the wall. Assuming that the hydraulic regimes of the heat exchanger, at least at the level where the bi-probe is arranged, are stable over time, that is to say that the values of convection resistances Rcv and R'vv do not vary. not, for example with respect to known nominal values, it is possible to evaluate the fouling resistances Re and R'e on each side of the wall. It is therefore possible to calculate at least one of the thickness of the fouling of the first side of the wall and the thickness of the fouling of the second side of the wall, depending on a respective one of the fouling resistance Re of the first side of the wall and the fouling resistance R'e of the second side of the wall and a respective one of a thermal conductivity of the fouling of the first side of the wall and a thermal conductivity fouling of the second side of the wall. Knowing the nature of fouling likely to form on each side of the wall, and therefore the thermal conductivities thereof, it is thus possible to evaluate the thickness of fouling on each side of the wall;
  • the steps of supplying, measuring and calculating the temperature of the mono-probes can be repeated from two instants t3 and t4 different from each other and subsequent to the instants t1 and t2, so that the exceeding of a predetermined threshold value by at least one of:
    • ∘ a difference between the calculated thermal resistances R , and
    • ∘ a difference between the calculated thermal resistances R ' ,
    is representative of an evolution, and possibly of a deterioration, of the operating conditions of the heat exchanger and if necessary allows a decision to be made as to the carrying out of a repair operation or replacement of the wall, or even the heat exchanger.

On entend par « circuit résistif » un chemin ou une piste de conduction électrique allant d'un point à un autre, par exemple d'un connecteur à un autre ou d'une borne à une autre, en présentant de préférence des sinuosités de façon à couvrir, de préférence en grande partie et de manière la plus homogène possible, une surface généralement plane.The term "resistive circuit" is understood to mean a path or an electrical conduction path going from one point to another, for example from one connector to another or from one terminal to another, preferably presenting sinuosities in a to cover, preferably largely and as homogeneously as possible, a generally flat surface.

Le mot « diélectrique » qualifie un matériau dont la conductivité électrique est suffisamment faible dans l'application donnée pour servir d'isolant électrique.The word "dielectric" qualifies a material whose electrical conductivity is sufficiently low in the given application to serve as an electrical insulator.

On entend par « encapsulant » le revêtement résultant d'une opération d'encapsulation consistant à enrober au moins partiellement un objet pour l'isoler électriquement et éventuellement le protéger.The term "encapsulant" means the coating resulting from an encapsulation operation of at least partially embedding an object to isolate it electrically and possibly protect it.

On entend par « conforme » la qualité géométrique d'une couche qui présente une même épaisseur malgré des changements de direction de couche, par exemple au niveau de flancs d'une sonde de température.The term "compliant" is understood to mean the geometrical quality of a layer that has the same thickness despite changes in layer direction, for example at the edges of a temperature probe.

On entend par un élément « à base » d'un matériau A, un élément comprenant ce matériau A et éventuellement d'autres matériaux.A "base" element of a material A is understood to mean an element comprising this material A and possibly other materials.

On entend par « courant électrique » un déplacement d'ensemble de porteurs de charges électriques, généralement des électrons, au sein d'un matériau conducteur. Le courant électrique est défini par un ensemble de paramètres parmi lesquels l'intensité, la tension et la puissance."Electric current" is understood to mean an overall displacement of electric charge carriers, generally electrons, within a conductive material. The electric current is defined by a set of parameters among which the intensity, the voltage and the power.

On entend par « matériau électriquement conducteur thermosensible » un matériau électriquement conducteur, tel qu'un métal, dont la résistance varie avec la température selon une loi d'évolution propre au matériau électriquement conducteur. Dans le cadre de l'invention, un circuit résistif 11, 21 à base d'un tel matériau, constitue en partie une mono-sonde 1, 2 dont la température varie en fonction de la résistance du circuit résistif 11, 21 selon la loi d'évolution ad hoc. La loi d'évolution s'écrit généralement sous la forme T = T 0 + R T R 0 1 α

Figure imgb0001
où, lorsqu'on l'applique dans le cadre de l'invention, T0 est une température de référence (en °C), T est la température (en °C) de la mono-sonde 1, 2, RT et R0 sont les résistances électriques (en ohm) du circuit résistif 11, 21 respectivement à la température T de la mono-sonde 1, 2 et à la température T0, et α est une constante (en °C-1) appelée coefficient thermique et définie dans la norme relative au matériau considéré.The term "thermally sensitive electrically conductive material" means an electrically conductive material, such as a metal, whose resistance varies with temperature according to a law of evolution specific to the electrically conductive material. In the context of the invention, a resistive circuit 11, 21 based on such a material, is in part a mono-probe 1, 2 whose temperature varies depending on the resistance of the resistive circuit 11, 21 according to the law ad hoc evolution . The law of evolution is generally written in the form T = T 0 + R T R 0 - 1 α
Figure imgb0001
where, when applied in the context of the invention, T 0 is a reference temperature (in ° C), T is the temperature (in ° C) of the single-probe 1, 2, R T and R 0 are the electrical resistances (in ohm) of the resistive circuit 11, 21 respectively at the temperature T of the single-probe 1, 2 and at the temperature T 0 , and α is a constant (in ° C -1 ) called coefficient thermal and defined in the relevant material standard.

Une bi-sonde 0 de température selon le premier aspect de l'invention est décrite ci-dessous en référence aux figures 1 à 5.A dual temperature probe according to the first aspect of the invention is described below with reference to Figures 1 to 5 .

Chaque bi-sonde 0 comprend deux mono-sondes 1, 2 et une couche 3 à base d'un matériau thermiquement isolant. La couche 3 est intercalée entre les deux mono-sondes 1, 2.Each bi-probe 0 comprises two mono-probes 1, 2 and a layer 3 based on a thermally insulating material. The layer 3 is interposed between the two mono-probes 1, 2.

Chaque mono-sonde 1,2 comprend un circuit résistif 11, 21 par exemple tel qu'illustré sur la figure 1. Chaque circuit résistif 11, 21 est mis en forme de manière à maximiser la surface développée et à occasionner un dépôt de puissance le plus homogène possible. A cette fin et comme illustré sur la figure 1, chaque circuit résistif 11, 21 peut prendre la forme d'un serpentin de manière à faire tenir une grande longueur de piste de conduction électrique sur une surface de dimensions limitées. Chaque circuit résistif 11, 21 peut prendre d'autres formes, par exemple une forme en spirale. La largeur de la piste est typiquement comprise entre 10 µm et 1 mm et est par exemple égale à 140 µm. L'épaisseur de la piste est typiquement comprise entre 5 µm et 30 µm et est par exemple égale à 10 µm.Each single-probe 1.2 comprises a resistive circuit 11, 21 for example as illustrated in FIG. figure 1 . Each resistive circuit 11, 21 is shaped so as to maximize the developed surface and cause a power deposit as homogeneous as possible. For this purpose and as illustrated on the figure 1 each resistive circuit 11, 21 may take the form of a coil so as to hold a long length of electrical conduction track on a surface of limited dimensions. Each resistive circuit 11, 21 may take other forms, for example a spiral shape. The width of the track is typically between 10 microns and 1 mm and is for example equal to 140 microns. The thickness of the track is typically between 5 microns and 30 microns and is for example equal to 10 microns.

Chaque circuit résistif 11, 21 est à base d'un matériau électriquement conducteur thermosensible. Par exemple, chaque circuit résistif 11, 21 est à base d'un métal thermosensible, choisi par exemple parmi le nickel, le platine, le tungstène, le cuivre et tout alliage à base de ces métaux, car tous possèdent la propriété d'avoir un coefficient thermique α (en °C-1) élevé, pour pouvoir être mesurée avec des dispositifs de mesures de courant 20 conventionnels. D'autres types de métaux peuvent être utilisés, si ceux-ci présentent un coefficient thermique suffisamment élevé.Each resistive circuit 11, 21 is based on a thermally sensitive electrically conductive material. For example, each resistive circuit 11, 21 is based on a thermosensitive metal chosen for example from nickel, platinum, tungsten, copper and any alloy based on these metals, because all have the property of having a thermal coefficient α (in ° C -1 ) high, to be measured with conventional current measurement devices. Other types of metals may be used if they have a sufficiently high thermal coefficient.

Selon la loi d'évolution ad hoc, la résistance RT de chaque circuit résistif 11, 21 peut être convertie en température T, en connaissant les caractéristiques de thermo-sensibilité α, T0 et R0 du métal constitutif du circuit résistif 11, 21. La résistance RT du circuit résistif 11, 21 peut être déterminée en connaissant au moins deux paramètres parmi la puissance P, l'intensité I et la tension U du courant électrique circulant dans le circuit résistif 11, 21. La sensibilité thermique de chaque mono-sonde 1, 2 s'exprime en °C/W ; elle dépend de son environnement thermique. La sensibilité thermique de chaque mono-sonde 1, 2 peut être typiquement d'environ 1°C/W, ce qui signifie que la température de chaque mono-sonde 1, 2 s'élève de 1°C pour une puissance appliquée de 1 W.According to the law of ad hoc evolution , the resistance R T of each resistive circuit 11, 21 can be converted into temperature T , knowing the characteristics of thermo-sensitivity α, T 0 and R 0 of the constituent metal of the resistive circuit 11, 21. The resistance R T of the resistive circuit 11, 21 can be determined by knowing at least two parameters among the power P, the intensity I and the voltage U of the electric current flowing in the resistive circuit 11, 21. The thermal sensitivity of each mono-probe 1, 2 is expressed in ° C / W; it depends on its thermal environment. The thermal sensitivity of each mono-probe 1, 2 can typically be about 1 ° C / W, which means that the temperature of each single-probe 1, 2 is 1 ° C for an applied power of 1 W.

Que le courant électrique circulant dans un circuit résistif soit continu ou alternatif, différents dispositifs de mesure de courant électrique 20, tels qu'un dispositif de mesure de tension (voltmètre), un dispositif de mesure d'intensité (ampèremètre) ou un dispositif de mesure de puissance peuvent être utilisés pour calculer la tension, l'intensité ou la puissance respectivement du courant électrique circulant dans le circuit résistif 11, 21. Le dispositif de mesure 20 utilisé peut être choisi pour mesurer le paramètre non imposé, et donc non connu, par le dispositif d'alimentation 10 qui de façon corrélée peut être un dispositif d'alimentation en tension ou en intensité.Whether the electric current flowing in a resistive circuit is continuous or alternating, different electrical current measuring devices 20, such as a voltage measuring device (voltmeter), an intensity measuring device (ammeter) or a device for measuring power measurement can be used to calculate the voltage, the intensity or the power respectively of the electric current flowing in the resistive circuit 11, 21. The measuring device 20 used can be chosen to measure the untaxed parameter, and therefore not known. by the supply device 10 which correlatively can be a voltage or current supply device.

Comme illustré sur la figure 2, chaque circuit résistif 11, 21 peut être encapsulé dans un encapsulant 13, 23. L'encapsulant 13, 23 peut enrober complétement le circuit résistif 11, 21, ou en partie seulement. L'encapsulant 13, 23 peut être appliqué par lamination d'un film, ou de deux films, d'un côté ou des deux côtés du circuit résistif 11, 21, respectivement. En alternative ou en combinaison, le circuit résistif 11, 21 peut être imprimé ou déposé directement sur un film d'encapsulant 13, 23. L'encapsulant 13, 23 est à base d'un matériau diélectrique, tel qu'un polymère. Ce polymère peut être un polyimide, tel que du Kapton®. Un film en Kapton® peut présenter par exemple des dimensions de 30 mm x 60 mm x 25 à 50 µm. Les dimensions et la forme des films, et donc de l'encapsulant 13, 23, peuvent être adaptées à la surface dans laquelle s'inscrit le circuit résistif 11, 21. L'encapsulant 13, 23 joue le rôle de protection et d'isolation électrique du circuit résistif 11, 21. L'encapsulant 13, 23 est de préférence propre à résister aux températures auxquelles la bi-sonde 0 selon l'invention est destinée à être soumise. Si ces températures sont élevées, par exemple supérieures à 200°C, voire de l'ordre de 350°C pour des applications au secteur pétrolier notamment, les matériaux constituant la bi-sonde 0 peuvent être adaptés, et notamment l'encapsulant 13, 23 est de préférence un matériau thermostable.As illustrated on the figure 2 each resistive circuit 11, 21 may be encapsulated in an encapsulant 13, 23. The encapsulant 13, 23 may completely encase the resistive circuit 11, 21, or only partially. The encapsulant 13, 23 may be applied by laminating a film, or two films, to one or both sides of the resistive circuit 11, 21, respectively. Alternatively or in combination, the resistive circuit 11, 21 can be printed or deposited directly on an encapsulant film 13, 23. The encapsulant 13, 23 is based on a dielectric material, such as than a polymer. This polymer may be a polyimide, such as Kapton®. For example, a Kapton® film may have dimensions of 30 mm x 60 mm x 25 to 50 μm. The dimensions and the shape of the films, and therefore of the encapsulant 13, 23, can be adapted to the surface in which the resistive circuit 11, 21 is inscribed. The encapsulant 13, 23 plays the role of protection and protection. electrical insulation of the resistive circuit 11, 21. The encapsulant 13, 23 is preferably able to withstand the temperatures at which the bi-probe 0 according to the invention is intended to be subjected. If these temperatures are high, for example greater than 200 ° C., or even of the order of 350 ° C. for applications in the petroleum sector in particular, the materials constituting the bi-probe 0 can be adapted, and in particular the encapsulant 13, 23 is preferably a thermostable material.

Chaque circuit résistif 11, 21 et son encapsulant 13, 23 forment ainsi une mono-sonde 1, 2. Chaque mono-sonde 1, 2 couvre typiquement une surface de forme libre, allant de un à quelques cm2, adaptable à la zone de la paroi 40 de l'échangeur de chaleur sur laquelle elle est destinée à être disposée. Chaque mono-sonde 1, 2 est ainsi de faible épaisseur ce qui lui assure une certaine flexibilité et donc une adaptation facilitée à presque toute forme de support. En outre, il est dès lors possible de négliger, en bonne approximation, les pertes thermiques par les flancs de la mono-sonde 1, 2. Ainsi, l'invention n'est nullement limitée aux exemples illustrés sur les figures 6 et 7 où la paroi 40 est plane ; la paroi 40 peut prendre toute forme, et par exemple peut être refermée sur elle-même, par exemple de sorte à former un tube.Each resistive circuit 11, 21 and its encapsulant 13, 23 thus form a mono-probe 1, 2. Each single-probe 1, 2 typically covers a free-form surface, ranging from one to a few cm 2 , adaptable to the the wall 40 of the heat exchanger on which it is intended to be arranged. Each mono-probe 1, 2 is thus of small thickness which gives it a certain flexibility and thus a facilitated adaptation to almost any form of support. In addition, it is therefore possible to neglect, in good approximation, the heat losses by the sides of the single-probe 1, 2. Thus, the invention is not limited to the examples illustrated on the Figures 6 and 7 where the wall 40 is flat; the wall 40 can take any shape, and for example can be closed on itself, for example so as to form a tube.

Chaque mono-sonde 1, 2 a deux fonctions : celle de dissipateur à effet Joule et celle de mesure résistive de température. A cette fin, et comme illustré sur la figure 5, chaque mono-sonde 1, 2 peut être câblée avec quatre fils 12, 22, le cas échéant à travers l'encapsulant 13, 23 : deux fils pour l'alimentation en courant électrique et deux fils pour la mesure de tension aux bornes du circuit résistif 11, 21 correspondant, les deux fils pour la mesure de tension étant disposés en parallèle des deux fils pour l'alimentation en courant électrique.Each mono-probe 1, 2 has two functions: that of dissipator Joule effect and that of resistive temperature measurement. For this purpose, and as illustrated on the figure 5 each single-probe 1, 2 can be wired with four wires 12, 22, if necessary through the encapsulant 13, 23: two wires for the power supply and two wires for the voltage measurement across the resistive circuit 11, 21 corresponding, the two son for the voltage measurement being arranged in parallel of the two son for the power supply.

Comme introduit plus haut et comme illustré sur les figures 3 et 4, chaque bi-sonde 0 comprend en outre la couche 3 à base d'un matériau isolant thermique. La couche 3 est intercalée entre les deux mono-sondes 1, 2 de la bi-sonde 0, par exemple par collage. Le collage d'une mono-sonde 1, 2 sur la couche 3 peut nécessiter un adhésif, par exemple adapté à un collage de la couche 3 sur un film polyimide constituant en partie l'encapsulant 13, 23 de chaque mono-sonde 1, 2. La couche 3 est d'une surface égale ou supérieure à celle de chaque mono-sonde 1, 2. La couche 3 crée une résistance thermique RTH entre les deux mono-sondes 1, 2. Cette résistance thermique RTH est fonction de l'épaisseur e et de la conductivité thermique λ du matériau thermiquement isolant à base duquel est constituée la couche 3 : RTH = λ/e. La résistance thermique RTH peut déterminer, à elle seule et/ou en bonne approximation, la résistance thermique Rs de la bi-sonde 0. Toutefois, la résistance thermique Rs de chaque bi-sonde 0 peut également être caractérisée par des étalonnages en chauffant alternativement une mono-sonde 1, 2, puis l'autre 2, 1, pour établir les relations entre les flux thermiques créés (qui sont connus par calcul) et les écarts d'évolution de température créés entre les deux mono-sondes 1, 2 (qui sont mesurés). Une telle caractérisation est notamment envisagée lorsque la bi-sonde 0 est placée entre deux corps matériaux de résistivités connues et très différentes. La bi-sonde 0 présente ainsi une résistance thermique Rs fonction au moins de l'épaisseur e et de la conductivité thermique λ de la couche 3 intercalée entre les deux mono-sondes 1,2.As introduced above and as illustrated on figures 3 and 4 each bi-probe 0 further comprises the layer 3 based on a thermal insulating material. The layer 3 is interposed between the two mono-probes 1, 2 of the bi-probe 0, for example by gluing. The bonding of a single-probe 1, 2 on the layer 3 may require an adhesive, for example suitable for bonding the layer 3 to a polyimide film constituting part of the encapsulant 13, 23 of each single-probe 1, 2. The layer 3 has an area equal to or greater than that of each single-probe 1, 2. The layer 3 creates a thermal resistance R TH between the two mono-probes 1, 2. This resistance thermal R TH is a function of the thickness e and the thermal conductivity λ of the thermally insulating material on which is based the layer 3: R TH = λ / e. The thermal resistance R TH can determine, by itself and / or in good approximation, the thermal resistance Rs of the bi-probe 0. However, the thermal resistance Rs of each bi-probe 0 can also be characterized by calibrations by heating. alternatively a mono-probe 1, 2, then the other 2, 1, to establish the relationships between the heat fluxes created (which are known by calculation) and the differences in temperature evolution created between the two single-probes 1, 2 (which are measured). Such characterization is in particular envisaged when the bi-probe 0 is placed between two known and very different resistivity material bodies. The bi-probe 0 thus has a thermal resistance Rs function at least of the thickness e and the thermal conductivity λ of the layer 3 interposed between the two mono-probes 1,2.

Ainsi, les températures d'équilibre des mono-sondes 1, 2 de la bi-sonde 0 peuvent être différentes, voire indépendantes, l'une de l'autre, en particulier lorsque l'on applique des intensités électriques différentes aux circuits résistifs 11, 21. De la sorte, la bi-sonde 0 permet d'associer des flux thermiques la traversant à des écarts de température, ou à des écarts d'évolution de température, entre les deux mono-sondes 1,2.Thus, the equilibrium temperatures of the mono-probes 1, 2 of the bi-probe 0 may be different, or even independent, of one another, in particular when different electrical intensities are applied to the resistive circuits 11 21. In this way, the bi-probe 0 makes it possible to associate thermal flows passing therethrough with temperature differences, or temperature variation differences, between the two mono-probes 1, 2.

Comme illustré sur la figure 5, chaque circuit résistif 11, 21 est destiné à être lié, en particulier depuis sa paire de connecteurs et par liaisons filaires 12, 22, et le cas échéant à travers l'encapsulant 13, 23, d'une part au dispositif d'alimentation 10, d'autre part au dispositif de mesure 20. Le dispositif d'alimentation électrique 10 permet l'alimentation électrique indépendante et coordonnée, par exemple en courant continu, de chacune des mono-sondes 1, 2. Le dispositif de mesure 20 permet des mesures indépendantes de la tension aux bornes du circuit résistif 11, 21 de chacune des mono-sondes 1, 2, et éventuellement courant électrique dans le circuit résistif 11, 21 de chacune des mono-sondes 1, 2. L'indépendance de l'alimentation signifie qu'il est possible de déposer des puissances variables et différentes en fonction du temps dans chaque circuit résistif 11, 21 de chacune des mono-sondes 1, 2. L'indépendance des mesures de tension, et éventuellement de courant, signifie qu'il est possible de mesurer la tension, et éventuellement le courant, et/ou l'évolution de la tension, et éventuellement l'évolution du courant, et dès lors de calculer la température et/ou l'évolution de la température, d'une mono-sonde 1, 2 indépendamment de la température et/ou de l'évolution de la température de l'autre mono-sonde 2, 1. La coordination de l'alimentation signifie qu'il est possible d'appliquer des consignes de pilotage de l'alimentation de chaque mono-sonde 1, 2 en fonction de l'alimentation de l'autre mono-sonde 2, 1 selon des stratégies déterminées. Comme mentionné plus haut, le dispositif de mesure 20 utilisé peut être choisi pour mesurer le paramètre non imposé, et donc non connu, par le dispositif d'alimentation 10. Par exemple, le dispositif d'alimentation 10 est un dispositif d'alimentation en intensité et impose donc une valeur d'intensité du courant dans le circuit résistif 11, 21 qu'il alimente et le dispositif de mesure 20 est un voltmètre mesurant la tension aux bornes du circuit résistif 11, 21, de sorte que la loi d'ohm permette de remonter à la résistance RT du circuit résistif 11, 21, puis remonter, via la loi d'évolution ad hoc, à la température T1, T2 de la mono-sonde 1, 2 comprenant le circuit résistif 11, 21. En alternative ou en complément, l'intensité dans chaque circuit résistif 11, 21 peut également être mesurée par le dispositif de mesure 20. Ainsi, le procédé 100 résiste à une erreur qui serait liée à l'alimentation en intensité par le dispositif d'alimentation 10 ou à une erreur dans la communication au dispositif de supervision 30 de la valeur d'intensité du courant déposé dans chaque circuit résistif 11, 21 par le dispositif d'alimentation 20.As illustrated on the figure 5 each resistive circuit 11, 21 is intended to be bonded, in particular from its pair of connectors and by wire links 12, 22, and if necessary through the encapsulant 13, 23, on the one hand to the power supply device 10, on the other hand to the measuring device 20. The power supply device 10 allows independent and coordinated power supply, for example direct current, of each of the single-probe 1, 2. The measuring device 20 allows independent measurements of the voltage at the terminals of the resistive circuit 11, 21 of each of the single-probes 1, 2, and possibly electrical current in the resistive circuit 11, 21 of each of the single-probes 1, 2. The independence of the supply means that it is possible to deposit variable and different powers as a function of time in each resistive circuit 11, 21 of each of the mono-probes 1, 2. The independence of the voltage measurements, and possibly of the current, means that it is possible to measure the voltage, and possibly the current, and / or the evolution of the voltage, and possibly the evolution of the current, and hence to calculate the temperature and / or the evolution of the temperature, of a mono 1, 2 regardless of the temperature and / or the change in the temperature of the other single-probe 2, 1. The coordination of the supply means that it is possible to apply controlling the supply of each mono-probe 1, 2 according to the supply of the other mono-probe 2, 1 according to determined strategies. As mentioned above, the measuring device 20 used may be chosen to measure the parameter not imposed, and therefore unknown, by the feed device 10. For example, the feed device 10 is a feed device. intensity and therefore imposes a value of intensity of the current in the resistive circuit 11, 21 that it supplies and the measuring device 20 is a voltmeter measuring the voltage across the resistive circuit 11, 21, so that the law of ohm makes it possible to go back to the resistor R T of the resistive circuit 11, 21, then to go up, via the law of ad hoc evolution , to the temperature T1 , T2 of the monoprobe 1, 2 including the resistive circuit 11, 21. Alternatively or in addition, the intensity in each resistive circuit 11, 21 can also be measured by the measuring device 20. Thus, the method 100 withstands an error that would be related to the power supply by the device. feed 10 or at a in the communication with the supervision device 30 of the intensity value of the current deposited in each resistive circuit 11, 21 by the supply device 20.

L'indépendance et/ou la coordination des alimentations et des mesures, ainsi que certains au moins des différents calculs du procédé selon l'invention, peuvent être assurés par un dispositif de supervision 30 (illustré sur la figure 6) du dispositif d'alimentation 10 et du dispositif de mesure 20. A cette fin, le dispositif de supervision 30 peut comprendre des moyens de traitement numérique, tel qu'un micro-processeur ou micro-contrôleur, ou un dispositif de traitement analogique. Il peut notamment commander les mesures de courant et/ou les calculs de température T1, T2 de chaque mono-sonde 1, 2 de façon continue ou échantillonnée, par exemple avec une vitesse d'échantillonnage comprise entre une et dix mesures par seconde. Ainsi, le dispositif de supervision 30 peut être configuré en outre pour détecter qu'un régime stationnaire a été atteint dans l'évolution en résistance ou en température de chaque mono-sonde 1, 2 vers une résistance ou une température d'équilibre, respectivement. Le régime stationnaire peut être considéré comme atteint lorsqu'un écart-type calculé par le dispositif de supervision 30 sur les valeurs de résistance ou de température T1, T2 passe sous une valeur seuil prédéfinie. Dans le contexte de l'invention, les températures d'équilibre de chaque mono-sonde 1, 2 dépendent de l'environnement thermique de chaque mono-sonde 1, 2, et dépendent au moins des températures Tf et Tf' des fluides f et f' circulant de part et d'autre de la paroi 40 de l'échangeur thermique.The independence and / or the coordination of the power supplies and the measurements, as well as at least some of the different calculations of the method according to the invention, can be provided by a supervision device 30 (illustrated in FIG. figure 6 ) for the feeder 10 and the measuring device 20. For this purpose, the supervisory device 30 may comprise digital processing means, such as a microprocessor or microcontroller, or an analog processing device. It may in particular control the current measurements and / or the temperature calculations T1 , T2 of each monoprobe 1, 2 continuously or sampled, for example with a sampling rate of between one and ten measurements per second. Thus, the supervision device 30 can be further configured to detect that a steady state has been reached in the resistance or temperature evolution of each single-probe 1, 2 towards a resistance or an equilibrium temperature, respectively . The steady state can be considered as reached when a standard deviation calculated by the supervision device 30 on the resistance or temperature values T1 , T2 passes below a predefined threshold value. In the context of the invention, the equilibrium temperatures of each single-probe 1, 2 depend on the thermal environment of each single-probe 1, 2, and depend at least on the temperatures Tf and Tf ' of the fluids f and f 'flowing on both sides of the wall 40 of the heat exchanger.

Deux au moins parmi les dispositifs d'alimentation 10, de mesure 20 et de supervision 30 peuvent être intégrés ensemble de façon à ne former qu'un dispositif remplissant les fonctions de chacun des dispositifs intégrés.At least two of the power supply 10, measurement 20 and supervision devices 30 may be integrated together so as to form only one device fulfilling the functions of each of the integrated devices.

Le procédé 100 d'évaluation d'au moins une condition de fonctionnement d'un échangeur de chaleur selon le troisième aspect de l'invention est décrit ci-dessous en référence aux figures 7 et 8 annexées.The method 100 for evaluating at least one operating condition of a heat exchanger according to the third aspect of the invention is described below with reference to figures 7 and 8 attached.

Pour connaître l'environnement thermique immédiat de la bi-sonde 0 et de la paroi 40 sur laquelle la bi-sonde 0 est fixée, il est utile de déterminer différents paramètres caractérisant localement cet environnement. Parmi ces paramètres, l'on compte ceux relatifs aux régimes de convection se produisant de chaque côté de la paroi 40, la résistance thermique Rp de la paroi 40, la résistance thermique Rs de la bi-sonde 0, les résistances thermiques d'encrassement Re et R'e de chaque côté de la paroi 40, les températures Tf, Tf' des fluides f et f' s'écoulant de chaque côté de la paroi 40, et le flux thermique Φ traversant la paroi 40. Les régimes de convection se produisant de chaque côté de la paroi 40 sont quantifiables en résistances thermiques de convection Rcv et R'cv de chaque côté de la paroi 40. La résistance thermique Rp de la paroi 40 peut être supposée invariante en temps et être une résistance thermique de référence ; toutefois, comme discuté plus bas, le procédé peut avantageusement être utilisé pour diagnostiquer une dégradation de la paroi résultant en une modification de sa résistance thermique Rp notamment par rapport à sa résistance thermique de référence. Comme discuté plus haut, la résistance thermique Rs de la bi-sonde 0 peut en bonne approximation être considérée égale à la résistance thermique RTH de la couche 3 isolant thermiquement les mono-sondes 1, 2 entre elles ; en alternative, la résistance thermique Rs de la bi-sonde 0 peut être mesurée.To know the immediate thermal environment of the bi-probe 0 and the wall 40 on which the bi-probe 0 is fixed, it is useful to determine various parameters locally characterizing this environment. Among these parameters, those relating to the convection regimes occurring on each side of the wall 40, the thermal resistance Rp of the wall 40, the thermal resistance Rs of the bi-probe 0, the thermal resistances of fouling are counted. Re and R'e on each side of the wall 40, the temperatures Tf, Tf ' fluids f and f ' flowing on each side of the wall 40, and the heat flow Φ through the wall 40. convection regimes occurring on each side of the wall 40 are quantifiable convection heat resistances Rcv and R'cv on each side of the wall 40. The thermal resistance Rp of the wall 40 can be assumed invariant in time and be a reference thermal resistance ; however, as discussed below, the method can advantageously be used to diagnose a degradation of the wall resulting in a change in its thermal resistance Rp especially with respect to its reference thermal resistance. As discussed above, the thermal resistance Rs of the bi-probe 0 may in good approximation be considered equal to the thermal resistance R TH of the layer 3 thermally insulating the mono-probes 1, 2 between them; alternatively, the thermal resistance Rs of the bi-probe 0 can be measured.

Pour évaluer les conditions de fonctionnement d'un échangeur de chaleur, la bi-sonde 0 de température est de préférence disposée, comme illustré sur la figure 7, sur la paroi 40 de l'échangeur de chaleur. La bi-sonde 0 est par exemple disposée à un emplacement de la paroi 40 à travers laquelle s'opère un transfert de chaleur, de préférence à destination fonctionnelle, entre les deux fluides f et f' circulant de part et d'autre de la paroi 40 et sur laquelle est susceptible de se déposer un encrassement 50, 50'. De la sorte, les conditions de fonctionnement, éventuellement dégradées, de l'échangeur de chaleur peuvent être évaluées et cette évaluation peut permettre une prise de décision quant à la réalisation d'une opération de remise en état ou de remplacement de la paroi 40, voire de l'échangeur de chaleur.To evaluate the operating conditions of a heat exchanger, the dual temperature probe 0 is preferably arranged, as shown in FIG. figure 7 on the wall 40 of the heat exchanger. The bi-probe 0 is for example disposed at a location of the wall 40 through which a heat transfer, preferably to a functional destination, takes place between the two fluids f and f 'circulating on either side of the wall 40 and on which fouling 50, 50 'can be deposited. In this way, the operating conditions, possibly degraded, of the heat exchanger can be evaluated and this evaluation can allow a decision to be made as to the carrying out of a repair operation or replacement of the wall 40, even the heat exchanger.

La bi-sonde 0 est de préférence disposée sur la paroi 40 lorsque celle-ci n'est pas recouverte d'un encrassement 50, 50' ou sur une partie non-encrassée de la paroi 40, de sorte d'être directement en contact avec la paroi 40. La bi-sonde 0 peut indifféremment être disposée d'un côté ou de l'autre de la paroi 40. Un encrassement 50, 50' peut indifféremment être destiné à se former du côté de la paroi 40 où la bi-sonde 0 est disposée, de l'autre côté, ou des deux côtés de la paroi 40. L'encrassement 50, 50' peut être destiné à se former au moins en partie sur la bi-sonde 0 et s'étendre de toute part autour de celle-ci le long de la paroi 40. Comme illustré sur la figure 7, lorsque l'encrassement 50 se forme du côté de la paroi 40 où la bi-sonde 0 est disposée, cet encrassement 50 peut être conforme. L'encrassement 50 formé d'un côté de la paroi 40 peut être d'une nature différente de l'encrassement 50' formé de l'autre côté de la paroi 40. La nature et/ou l'épaisseur des encrassements 50, 50' peut dépendre de la nature des fluides f et f', respectivement, ainsi que de leur températures Tf et Tf'. La nature et/ou l'épaisseur des encrassements 50, 50' peut également dépendre de la géométrie et/ou de la nature et/ou de l'état de surface de la paroi 40. La nature et/ou l'épaisseur des encrassements 50, 50' peut dépendre des régimes d'écoulement des fluides f et f' circulant de part et d'autre de la paroi 40. Des écoulements à contre-courant des fluides f et f' sont illustrés sur la figure 7, mais le procédé selon l'invention s'applique également dans d'autres configurations d'écoulements, et notamment pour des écoulements à co-courant. Dans l'exemple illustré sur la figure 7, la bi-sonde 0 est disposée d'un premier côté de la paroi 40 et une première mono-sonde 1 est disposée sur la paroi 40 par l'intermédiaire de l'autre mono-sonde 2 et de la couche 3 intercalée.The bi-probe 0 is preferably disposed on the wall 40 when it is not covered with fouling 50, 50 'or on a non-fouled portion of the wall 40, so as to be directly in contact with the wall 40. The bi-probe 0 may indifferently be arranged on one side or the other of the wall 40. A fouling 50, 50 'can indifferently be intended to be formed on the side of the wall 40 where the bi -probe 0 is disposed on the other side or both sides of the wall 40. The fouling 50, 50 'may be intended to be formed at least in part on the bi-probe 0 and extend from all sides around of it along the wall 40. As illustrated on the figure 7 when the fouling 50 is formed on the side of the wall 40 where the bi-probe 0 is disposed, this fouling 50 may be in accordance. The fouling 50 formed on one side of the wall 40 may be of a different nature from the fouling 50 'formed on the other side of the wall 40. The nature and / or the thickness of the fouling 50, 50 may depend on the nature of the fluids f and f ' , respectively, as well as their temperatures Tf and Tf'. The nature and / or the thickness of the fouling 50, 50 'may also depend on the geometry and / or the nature and / or the surface condition of the wall 40. The nature and / or the thickness of the fouling 50, 50 'may depend on the flow regimes of the fluids f and f ' flowing on either side of the wall 40. Countercurrent flows of the fluids f and f 'are illustrated in FIG. figure 7 , but the method according to the invention also applies in other flow configurations, and especially for co-current flows. In the example shown on the figure 7 , the bi-probe 0 is disposed on one side of the wall 40 and a first single-probe 1 is disposed on the wall 40 via the other single-probe 2 and the layer 3 interposed.

Selon un mode de réalisation de l'invention et en référence à la figure 8, le procédé comprend une première série des étapes suivantes, de préférence coordonnées par le dispositif de supervision 30 :

  • alimenter 110 les circuits résistifs 11, 21 par des courants d'intensités différentes,
  • mesurer 120 la tension aux bornes de chacun des circuits résistifs 11, 21, et éventuellement le courant électrique dans chacun des circuits résistifs 11, 21, puis
  • calculer 130 la température T1(t1), T2(t1) de chaque mono-sonde 1, 2 au moins en fonction de la mesure 120 de tension aux bornes du circuit résistif 11, 21 correspondant, et éventuellement de la mesure 120 du courant électrique dans le circuit résistif 11, 21 correspondant.
According to one embodiment of the invention and with reference to the figure 8 the method comprises a first series of the following steps, preferably coordinated by the supervisory device 30:
  • supplying the resistive circuits 11, 21 with currents of different intensities,
  • measuring the voltage at the terminals of each of the resistive circuits 11, 21, and possibly the electric current in each of the resistive circuits 11, 21, and then
  • calculating 130 the temperature T1 (t1), T2 (t1) of each single-probe 1, 2 at least as a function of the voltage measurement 120 across the corresponding resistive circuit 11, 21, and possibly the measurement of the electrical current 120 in the resistive circuit 11, 21 corresponding.

Cette première série d'étapes 110 à 130 est réalisée à compter d'un premier instant t1, puis une deuxième série d'étapes correspondantes 140 à 160, de préférence à nouveau coordonnées par le dispositif de supervision 30, est réalisée à compter d'un deuxième instant t2. Cette deuxième série d'étapes 140 à 160 permet de calculer 160 la température T1(t2), T2(t2) de chaque mono-sonde 1, 2. La deuxième série d'étapes n'est réalisée qu'une fois la première série d'étapes achevée, ou du moins qu'une fois les mesures 120 achevées. La température Ti(tj), avec i et j = 1 ou 2, est la température de la mono-sonde i déterminée à compter de l'instant tj. Les calculs 130, 160 de chaque température Ti(tj) peut impliquer le calcul intermédiaire de chaque résistance électrique Ri(tj) correspondante selon la loi d'évolution ad hoc évoquée plus haut, où la résistance Ri(tj), avec i et j = 1 ou 2, est la résistance de la mono-sonde i déterminée à compter de l'instant tj. This first series of steps 110 to 130 is carried out from a first moment t1, then a second series of corresponding steps 140 to 160, preferably again coordinated by the supervision device 30, is performed starting from a second moment t2. This second series of steps 140 to 160 makes it possible to calculate 160 the temperature T1 (t2), T2 (t2) of each single-probe 1, 2. The second series of steps is only performed once the first series completed, or at least once the measures 120 have been completed. The temperature Ti (tj), with i and j = 1 or 2, is the temperature of the single-probe i determined from time tj. Calculations 130, 160 of each temperature Ti (tj) may involve the intermediate calculation of each corresponding electrical resistance Ri (tj) according to the law of ad hoc evolution mentioned above, where the resistance Ri (tj), with i and j = 1 or 2, is the resistance of the single-probe i determined from time tj.

Le procédé 100 selon le mode de réalisation illustré sur la figure 8 comprend alors en outre au moins l'étape suivante : calculer 170, en fonction de la résistance thermique Rs de la bi-sonde 0, de la résistance thermique Rp de la paroi 40 et des températures T1(t1), T2(t1), T1(t2) et T2(t2) des mono-sondes 1, 2, au moins l'une parmi les températures Tf et Tf' des fluides f et f' et les résistances thermiques R et R' de chaque côté de la paroi 40.The method 100 according to the embodiment illustrated on the figure 8 then further comprises at least the following step: calculating 170, as a function of the thermal resistance Rs of the bi-probe 0, the thermal resistance Rp of the wall 40 and the temperatures T1 (t1), T2 (t1), T1 (t2) and T2 (t2) of the mono-probes 1, 2, at least one of the temperatures Tf and Tf ' of the fluids f and f ' and the thermal resistors R and R ' on each side of the wall 40 .

Un mode de réalisation particulier de l'invention est décrit ci-après en référence à la figure 7. Cette description permet d'expliciter en détails le calcul 170 introduit plus haut, dans un contexte selon lequel le courant électrique alimentant 110, 140 le circuit résistif 11 de la première mono-sonde 1 consiste en une alimentation en intensité et est paramétré de sorte à induire une évolution de température nulle de la première mono-sonde 1. Typiquement, l'intensité du courant électrique alimentant 110, 140 le circuit résistif 11 est alors sensiblement égale à 1 mA. Une telle intensité ou puissance électrique est fournie au circuit résistif 11 pour y induire une différence de tension et pouvoir remonter à ses températures T1(t1) et T1(t2) par la loi d'ohm et la loi d'évolution ad hoc. L'on peut également considérer que la température T1 n'évolue pas sur la période d'acquisition des températures T1(t1) et T1(t2), ce qui permet de considérer que T1(t2) = T1(t1) et donc de se limiter au calcul d'une seule des températures T1(t1) et T1(t2). Il convient donc de considérer que l'une ou l'autre des étapes d'alimentation 110, 140 du circuit résistif 11 peut comprendre l'application d'un courant d'alimentation d'intensité nulle à compter de l'un ou l'autre parmi le premier instant t1 et le deuxième instant t2. Il convient également de considérer que l'une des étapes de mesure de tension 120, 150 aux bornes du circuit résistif 11 peut consister à reprendre le résultat de l'autre des étapes de mesure de tension 150, 120 aux bornes du circuit résistif 11.A particular embodiment of the invention is described below with reference to the figure 7 . This description makes it possible to explain in detail the calculation 170 introduced above, in a context in which the electric current supplying 110, 140 the resistive circuit 11 of the first single-probe 1 consists of a power supply and is parametered so as to inducing a zero temperature change of the first single-probe 1. Typically, the intensity of the electric current supplying 110, 140 the resistive circuit 11 is then substantially equal to 1 mA. Such intensity or electrical power is supplied to the resistive circuit 11 to induce a voltage difference and to be able to go back to its temperatures T1 (t1) and T1 (t2) by the ohm law and the law ad hoc evolution . One can also consider that the temperature T1 does not evolve over the period of acquisition of the temperatures T1 (t1) and T1 (t2), which makes it possible to consider that T1 (t2) = T1 (t1) and thus of be limited to the calculation of only one of the temperatures T1 (t1) and T1 (t2). It should therefore be considered that one or the other of the power supply stages 110, 140 of the resistive circuit 11 may comprise the application of a power supply current of zero intensity starting from one or the other of the first instant t1 and the second instant t2. It should also be considered that one of the voltage measurement steps 120, 150 across the resistive circuit 11 may consist of taking up the result of the other of the voltage measurement steps 150, 120 across the resistive circuit 11.

Dans ce contexte, lorsque la deuxième mono-sonde 2, dissipe de l'énergie thermique, une élévation de sa température T2 permet d'établir un équilibre thermique avec son environnement. La différence de température ΔT entre la température initiale de la deuxième mono-sonde 2 sans dissipation de puissance et la température d'équilibre T2(t1) ou T2(t2) avec dissipation de puissance est fonction de l'énergie dissipée et des résistances thermiques de l'environnement. Notamment, si un encrassement 50 et/ou 50' ajoute une résistance thermique Re et/ou R'e dans l'environnement de la bi-sonde 0, il est possible de la détecter par la modification induite sur la différence de température ΔT. In this context, when the second mono-probe 2 dissipates thermal energy, an increase in its temperature T2 makes it possible to establish a thermal equilibrium with its environment. The temperature difference ΔT between the initial temperature of the second mono-probe 2 without power dissipation and the equilibrium temperature T2 (t1) or T2 (t2) with power dissipation is a function of the dissipated energy and the thermal resistances. of the environment. In particular, if a fouling 50 and / or 50 'adds a thermal resistance Re and / or R'e in the environment of the bi-probe 0, it is possible to detect it by the modification induced on the temperature difference ΔT.

A compter du premier instant t1, on dépose 110 une puissance P2(t1) dans la deuxième mono-sonde 2. De préférence à l'atteinte du régime thermique stationnaire de l'évolution en température de la deuxième mono-sonde 2, on en calcule 130 la température T2(t1). From the first instant t1, a power P2 (t1) is deposited in the second monoprobe 2. Preferably, when the stationary thermal regime of the temperature change of the second monoprobe 2 is reached, calculates 130 the temperature T2 (t1).

Puis, à compter du deuxième instant t2, on dépose 140 une puissance P2(t2) dans la deuxième mono-sonde 2. De préférence à l'atteinte du régime thermique stationnaire de l'évolution en température de la deuxième mono-sonde 2, on en calcule 160 la température T2(t2). Then, as of the second instant t2, 140 a power P2 (t2) is deposited in the second monoprobe 2. Preferably at the attainment of the stationary thermal regime of the temperature evolution of the second monoprobe 2, the temperature T2 (t2) is calculated 160 .

La puissance P2(t2) n'est pas nécessairement différente de la puissance P2(t1). Les puissances P2(t1) et P2(t2) ne sont simplement pas appliquées simultanément, mais alternativement. Toutefois, la puissance P2(t2) est de préférence différente de la puissance P2(t1) ; cela permet de bénéficier pleinement de la robustesse de l'approche analytique sur laquelle repose l'invention et de fiabiliser encore les calculs en s'affranchissant d'une éventuelle imprécision de mesure 120, 150 suite à l'application 110, 140 de l'une ou l'autre des puissances P2(t1) et P2(t2). En outre, les puissances P2(t1) et P2(t2) sont de préférence appliquées 110, 140 de façon suffisamment proche l'une de l'autre dans le temps, soit par exemple à quelques dizaines de secondes d'intervalle, par exemple avec un intervalle inférieur à 60 secondes, plus particulièrement inférieur à 30 secondes et de préférence égal à 10 secondes, pour pouvoir négliger une variation des résistances thermiques R et R' de chaque côté de la paroi 40. Une limite inférieure de l'intervalle de temps entre les applications successives des puissances P2(t1) et P2(t2) peut être le temps nécessaire pour atteindre le régime stationnaire de l'évolution en température de chaque circuit résistif 11, 12 ; ce temps étant généralement inférieur à 10 secondes, et par exemple compris entre 2 et 8 secondes.The power P2 (t2) is not necessarily different from the power P2 (t1). The powers P2 (t1) and P2 (t2) are simply not applied simultaneously, but alternately. However, the power P2 (t2) is preferably different from the power P2 (t1) ; this makes it possible to take full advantage of the robustness of the analytical approach on which the invention is based and to make the calculations even more reliable by eliminating any measurement inaccuracy 120, 150 following the application 110, 140 of the one or other of the powers P2 (t1) and P2 (t2). In addition, the powers P2 (t1) and P2 (t2) are preferably applied 110, 140 sufficiently close to each other in time, for example to a few tens of seconds apart, for example with an interval of less than 60 seconds, more particularly less than 30 seconds and preferably equal to 10 seconds, in order to neglect a variation of the thermal resistances R and R ' on each side of the wall 40. A lower limit of the time between the successive applications of the powers P2 (t1) and P2 (t2) can be the time necessary to reach the stationary regime of the temperature evolution of each resistive circuit 11, 12; this time being generally less than 10 seconds, and for example between 2 and 8 seconds.

Les puissances P2(t1) et P2(t2) sont typiquement comprises entre 1 et 10 W. Elles sont choisies suffisamment faibles pour ne pas remettre en cause l'équilibre thermique général de l'échangeur thermique, et notamment pour ne pas altérer les températures Tf et Tf' des fluides f et f'. L'on peut s'en assurer en paramétrant l'alimentation 110, 140 de sorte que la puissance dissipée par la bi-sonde 0 soit de l'ordre de 0,02 % de la puissance thermique échangée à travers la paroi 40 de l'échangeur de chaleur.The powers P2 (t1) and P2 (t2) are typically between 1 and 10 W. They are chosen sufficiently low not to call into question the general thermal equilibrium of the heat exchanger, and especially not to alter the temperatures Tf and Tf ' fluids f and f' . This can be ensured by parameterizing the supply 110, 140 so that the power dissipated by the bi-probe 0 is of the order of 0.02% of the thermal power exchanged through the wall 40 of the 'heat exchanger.

La question du niveau de puissance à déposer 110, 140 dans la deuxième mono-sonde 2 a fait l'objet de développements analytiques spécifiques non présentés ici. Cependant, elle peut être traitée de la manière suivante. Les contraintes antagonistes qui s'appliquent sont :

  • d'une part la nécessité de ne pas déposer une puissance trop forte qui perturberait le fonctionnement de l'échangeur de chaleur (et notamment modifierait les températures Tf et Tf' des fluides f et f'),
  • d'autre part la nécessité de déposer une puissance suffisante pour se traduire dans les faits par une modification de la température T2 de la deuxième mono-sonde 2 suffisante, et donc par un flux thermique Φ2 = Φ2,s + Φ2,b (Cf. figure 7) suffisant, pour que l'interprétation des mesures de tension 120, 150 soit précise.
The question of the power level to be deposited 110, 140 in the second single-probe 2 has been the subject of specific analytical developments not presented. right here. However, it can be treated in the following manner. The antagonistic constraints that apply are:
  • on the one hand the need not to deposit a too strong power which would disturb the operation of the heat exchanger (and in particular would modify the temperatures Tf and Tf ' fluids f and f' ),
  • on the other hand the need to deposit a sufficient power to translate in fact by a modification of the temperature T2 of the second sufficient mono-probe 2, and therefore by a thermal flow Φ 2 = Φ 2, s + Φ 2, b (Cf. figure 7 ) sufficient for the interpretation of the voltage measurements 120, 150 to be accurate.

On peut alors calculer à l'aide de bilans thermiques au moins un paramètre parmi un couple de paramètres comprenant la température Tf du fluide f et la résistance thermique R d'un côté de la paroi 40 et un couple de paramètres comprenant la température Tf' du fluide f' et la résistance thermique R' de l'autre côté de la paroi 40.It is then possible to calculate, by means of thermal balances, at least one parameter from a pair of parameters comprising the temperature Tf of the fluid f and the thermal resistance R of one side of the wall 40 and a pair of parameters comprising the temperature Tf ' fluid f 'and the thermal resistance R' on the other side of the wall 40.

La figure 7 illustre le schéma de principe et la signification des notations employées ci-dessous. On notera que, pour les descriptions données ici, les températures sont données comme températures moyennes de la couche de matériau à laquelle elles se rattachent et que les flux thermiques sont donnés au travers d'interface entre ces couches.The figure 7 illustrates the schematic diagram and the meaning of the notations employed below. It should be noted that, for the descriptions given here, the temperatures are given as average temperatures of the layer of material to which they are attached and that the heat flows are given through an interface between these layers.

La résistance thermique Rs (en m2·K·W-1) de la bi-sonde 0 et/ou l'épaisseur e (en mètre) et la conductivité thermique λ (en W·m-1·K-1) de la bi-sonde 0 sont connues. De ces paramètres dépend le flux thermique Φ2,s (en W/m2) traversant l'interface entre les mono-sondes 1 et 2, à compter de chaque instant t1 et t2 : Φ 2 , s t 1 = 1 R s T 1 t 1 T 2 t 1 = λ e T 1 t 1 T 2 t 1 ,

Figure imgb0002
et Φ 2 , s t 2 = 1 R s T 1 t 2 T 2 t 2 = λ e T 1 t 2 T 2 t 2 .
Figure imgb0003
The thermal resistance R s (in m 2 · K · W -1 ) of the bi-probe 0 and / or the thickness e (in meters) and the thermal conductivity λ (in W · m -1 · K -1 ) bi-probe 0 are known. These parameters depend on the thermal flux Φ 2, s (in W / m 2 ) passing through the interface between the mono-probes 1 and 2, starting from each instant t1 and t2: Φ 2 , s t 1 = - 1 R s T 1 t 1 - T 2 t 1 = - λ e T 1 t 1 - T 2 t 1 ,
Figure imgb0002
and Φ 2 , s t 2 = - 1 R s T 1 t 2 - T 2 t 2 = - λ e T 1 t 2 - T 2 t 2 .
Figure imgb0003

On peut également écrire l'expression du flux thermique Φ2,b (en W/m2) traversant l'interface entre la deuxième mono-sonde 2 et la paroi 40, à compter de chaque instant t1 et t2 : Φ 2 , b t 1 = S P 2 t 1 Φ 2 , s t 1 = T 2 t 1 Tf R p + R s + R = c t 1 ,

Figure imgb0004
et Φ 2 , b t 2 = S P 2 t 2 Φ 2 , s t 2 = T 2 t 2 Tf R p + R s + R = c t 2 ,
Figure imgb0005

S est la surface de la bi-sonde 0 (en m2), Tf' (en K) est la température du fluide f' circulant du second côté de la paroi 40, Rp est la résistance de la paroi 40, et R' est la résistance thermique du second côté de la paroi 40.It is also possible to write the expression of the thermal flux Φ 2, b (in W / m 2 ) passing through the interface between the second mono-probe 2 and the wall 40, starting from each instant t1 and t2: Φ 2 , b t 1 = S P 2 t 1 - Φ 2 , s t 1 = T 2 t 1 - Tf ' R p + R s + R ' = c t 1 ,
Figure imgb0004
and Φ 2 , b t 2 = S P 2 t 2 - Φ 2 , s t 2 = T 2 t 2 - Tf ' R p + R s + R ' = c t 2 ,
Figure imgb0005
or
S is the surface of the bi-probe 0 (in m 2 ), Tf ' (in K) is the temperature of the fluid f ' flowing on the second side of the wall 40, R p is the resistance of the wall 40, and R is the thermal resistance of the second side of the wall 40.

Ainsi, on en déduit : Tf = c t 2 T 2 t 1 c t 1 T 2 t 2 c t 2 c t 1 ,

Figure imgb0006
et R = T 2 t 1 c t 1 R p R s c t 2 T 2 t 1 c t 1 T 2 t 2 c t 1 c t 2 c t 1 .
Figure imgb0007
Thus, we deduce: Tf ' = c t 2 T 2 t 1 - c t 1 T 2 t 2 c t 2 - c t 1 ,
Figure imgb0006
and R ' = T 2 t 1 c t 1 - R p - R s - c t 2 T 2 t 1 - c t 1 T 2 t 2 c t 1 c t 2 - c t 1 .
Figure imgb0007

De la même manière, connaissant les relations suivantes : Φ 2 , s t 1 = T 1 t 1 Tf R s + R ,

Figure imgb0008
et Φ 2 , s t 2 = T 1 t 2 Tf R s + R ,
Figure imgb0009
on en déduit Tf, la température du fluide f circulant du premier côté de la paroi 40, et R, la résistance thermique du premier côté de la paroi 40.In the same way, knowing the following relations: Φ 2 , s t 1 = T 1 t 1 - Tf R s + R ,
Figure imgb0008
and Φ 2 , s t 2 = T 1 t 2 - Tf R s + R ,
Figure imgb0009
we deduce Tf, the temperature of the fluid f flowing the first side of the wall 40, and R the thermal resistance of the first side of the wall 40.

Dès lors, il est possible calculer le flux thermique Φ (en W/m2) traversant la paroi 40 : Φ = Tf Tf R p .

Figure imgb0010
Ce flux pourrait aussi le cas échéant être exprimé sous la forme: Φ = Tf Tf R + R p + R .
Figure imgb0011
Therefore, it is possible to calculate the thermal flux Φ (in W / m 2 ) passing through the wall 40: Φ = Tf - Tf ' R p .
Figure imgb0010
This flow could also be expressed as: Φ = Tf - Tf ' R + R p + R ' .
Figure imgb0011

Le flux thermique Φ (en W/m2) traversant la paroi 40 peut également être connu via une mesure à puissance déposée P2 nulle. En effet, si P2 est nulle, le flux thermique Φ est égal au flux Φ2, b, soit 1 R s T 1 t 1 T 2 t 1 .

Figure imgb0012
The heat flux Φ (in W / m 2 ) passing through the wall 40 can also be known via a zero deposited power measurement P2. Indeed, if P2 is zero, the heat flux Φ is equal to the flux Φ 2, b, either 1 R s T 1 t 1 - T 2 t 1 .
Figure imgb0012

Ainsi, les mesures 120, 150 successives avec la bi-sonde 0 permettent d'obtenir les températures Tf et Tf' des fluides f et f', les résistances thermiques R et R' de chaque côté de la paroi 40, ainsi que le flux thermique Φ traversant la paroi 40. Du fait que chacune des résistances thermiques R et R' calculées est proportionnelle à une somme de résistances thermiques de convection et éventuellement d'encrassement : R = Rcv +Re et R' = R'cv+R'e, le procédé 100 permet de discriminer de quel(s) côté(s) de la paroi 40 un encrassement s'est déposé, par exemple depuis une évaluation nominale ou antérieure des conditions de fonctionnement de l'échangeur de chaleur. Au contraire, en fonctionnant non pas avec une bi-sonde 0, mais avec une seule mono-sonde 1 ou 2, il n'est pas possible de différencier les résistances thermiques R et R' de part et d'autre de la paroi 40, ni d'obtenir les températures Tf et Tf' des fluides f et f'.Thus, the successive measurements 120, 150 with the bi-probe 0 make it possible to obtain the temperatures Tf and Tf ' of the fluids f and f' , the thermal resistances R and R ' on each side of the wall 40, as well as the flow thermal Φ passing through the wall 40. Because each of the thermal resistors R and R ' calculated is proportional to a sum of convection thermal resistances and possibly fouling: R = Rcv + Re and R' = R'cv + R ' e, the method 100 makes it possible to discriminate on which side (s) of the wall 40 a fouling has been deposited, for example since a nominal or previous evaluation of the operating conditions of the heat exchanger. On the other hand, by not operating with a bi-probe 0, but with a single single-probe 1 or 2, it is not possible to differentiate between the thermal resistances R and R ' on either side of the wall 40 nor to obtain the temperatures Tf and Tf ' of the fluids f and f' .

Les hypothèses faites ci-dessus permettant d'aboutir à ces résultats consistent à supposer que :

  • P2(t1) et P2(t2) ne modifient pas les températures Tf et Tf', et que
  • P2(t1) et P2(t2) sont appliquées 110, 140 successivement, mais de façon suffisamment proche dans le temps, pour pouvoir négliger la variation des résistances thermiques d'encrassement Re et R'e et l'éventuelle variation des résistances thermiques de convection Rcv ou R'cv.
The assumptions made above to arrive at these results consist in supposing that:
  • P2 (t1) and P2 (t2) do not modify the temperatures Tf and Tf ', and that
  • P2 (t1) and P2 (t2) are applied 110, 140 successively, but sufficiently close in time, to be able to neglect the variation of the thermal resistance of fouling Re and R'e and the possible variation of the thermal resistances of convection Rcv or R'vv.

Si on fait l'hypothèse supplémentaire de la connaissance a priori des valeurs des résistances thermiques de convection Rcv et R'cv, par exemple en supposant qu'elles sont identiques à celles correspondant à des conditions de fonctionnement nominales de l'échangeur de chaleur, on peut déduire, des résistances thermiques R et R' calculées, les résistances d'encrassement Re et R'e de chaque côté de la paroi 40.If we make the additional assumption of a priori knowledge of the values of the convection heat resistances Rcv and R'cv, for example by assuming that they are identical to those corresponding to nominal operating conditions of the heat exchanger, it is possible to deduce, from the calculated thermal resistances R and R ' , the fouling resistances Re and R'e on each side of the wall 40.

Connaissant la nature des encrassements 50, 50' susceptibles de se former de chaque côté de la paroi 40, et donc leurs conductivités thermiques, il est possible d'évaluer les épaisseurs des encrassements, en fonction des résistances d'encrassement Re et R'e de chaque côté de la paroi 40 ( Re = e λe ,

Figure imgb0013
R e = e λ e
Figure imgb0014
λe, λ'e sont les conductivités thermiques des couches d'encrassement d'épaisseurs e,e'). Ainsi, le procédé 100 peut en outre comprendre l'étape suivante: calculer 200 au moins l'une parmi les épaisseurs des encrassements 50, 50', en fonction de l'une respective parmi les résistances d'encrassement Re et R'e de chaque côté de la paroi 40 et de l'une respective parmi les conductivités thermiques des encrassements de chaque côté de la paroi 40.Knowing the nature of the fouling 50, 50 'likely to form on each side of the wall 40, and therefore their thermal conductivities, it is possible to evaluate the fouling thicknesses, as a function of the fouling resistances Re and R'e. on each side of the wall 40 ( Re = e λe ,
Figure imgb0013
R ' e = e ' λ ' e
Figure imgb0014
where λe, λ'e are the thermal conductivities of the fouling layers of thickness e, e '). Thus, the method 100 may further comprise the step of: calculating 200 at least one of the fouling thicknesses 50, 50 ', as a function of a respective one of the fouling resistances Re and R'e of each side of the wall 40 and one of the thermal conductivities of the fouling on each side of the wall 40.

L'invention n'est pas limitée aux modes de réalisations précédemment décrits et s'étend à tous les modes de réalisation couverts par les revendications.The invention is not limited to the previously described embodiments and extends to all the embodiments covered by the claims.

Par exemple, l'emploi de la bi-sonde 0 tel que décrit ci-dessus, selon lequel on réalise un dépôt 110, 140 de puissance P2 dans la mono-sonde 2, permet de déterminer un nombre de quantités d'intérêt pour l'ingénieur (Tf, Tf', R, R', ...). La plupart des développements analytiques présentés ci-dessus sont fournis dans ce contexte. Un dépôt de puissance dans la mono-sonde 1 conduirait à des développements analytiques similaires, quoique légèrement différents, qui permettraient in fine de déterminer les mêmes quantités d'intérêt en faisant les mêmes hypothèses. La formulation de ces développements non présentés ici est jugée relever des compétences ordinaires de l'homme de l'art, au vu des développements analytiques fournis.For example, the use of the bi-probe 0 as described above, according to which a deposit of power P2 in the monoprobe 2 is made, 110, 140, makes it possible to determine a number of quantities of interest for the engineer ( Tf, Tf ', R, R', ...). Most of the analytical developments presented above are provided in this context. A deposition of power in the single-probe 1 would lead to similar, albeit slightly different, analytical developments, which would ultimately determine the same amounts of interest by making the same assumptions. The wording of these developments not presented here is considered to fall within the ordinary skill of those skilled in the art, in view of the analytical developments provided.

Par exemple, les étapes 110 à 130 et 120 à 150 peuvent être répétées à compter de deux instants t3 et t4 différents entre eux et ultérieurs aux instants t1 et t2. Chacune des étapes de calcul 170 à 200 peut donc être également répétées. De la sorte, une éventuelle différence entre les résultats de chacun des calculs 170 à 200 peut être représentative d'une évolution, voire d'une dégradation, des conditions de fonctionnement de l'échangeur de chaleur et peut permettre notamment une prise de décision quant à la réalisation d'une opération de remise en état ou de remplacement de la paroi 40, voire de l'échangeur de chaleur. Une répétition des étapes 110 à 170, voire également des étapes 180 à 200, du procédé 100 peuvent être programmées par exemple par intervalles de 10 minutes, de 24 heures, de 1 mois, de 1 an, etc. et/ou par exemple dès une première mise en fonctionnement de l'échangeur thermique et après chaque opération d'entretien et de maintenance de l'échangeur thermique.For example, steps 110 to 130 and 120 to 150 may be repeated from two instants t3 and t4 different from each other and subsequent to times t1 and t2. Each of the calculation steps 170 to 200 can therefore also be repeated. In this way, a possible difference between the results of each of the calculations 170 to 200 may be representative of an evolution, or even a deterioration, of the operating conditions of the heat exchanger and may in particular enable decision-making to be made as to performing a reclamation or replacement operation wall 40, or even the heat exchanger. A repetition of steps 110 to 170, or even steps 180 to 200, of the method 100 may be programmed for example in intervals of 10 minutes, 24 hours, 1 month, 1 year, etc. and / or for example from a first operation of the heat exchanger and after each operation of maintenance and maintenance of the heat exchanger.

Dans ce contexte, un exemple d'application est donné ci-après qui a pour objectif de déterminer si oui ou non la paroi 40 de l'échangeur thermique s'est dégradée entre deux mises en oeuvre successives du procédé 100, par exemple entre une première mise en fonctionnement de l'échangeur thermique et une première opération d'entretien et de maintenance de l'échangeur thermique ou entre deux opérations d'entretien et de maintenance de l'échangeur thermique. Que ce soit lors de la première mise en fonctionnement de l'échangeur thermique ou après une opération d'entretien et de maintenance de l'échangeur thermique, la paroi 40 peut être supposée non recouverte d'encrassements 50, 50', de sorte que les seules résistances thermiques mises en jeu dans le transfert de chaleur à travers la paroi 40 sont celles de la bi-sonde 0, de la paroi 40 et des régimes de convection, à savoir Rcv et R'cv. Dans ces conditions et dès lors que la résistance thermique Rs de la bi-sonde 0 n'a pas variée et que les résistances de convection Rcv et R'cv sont connues, une différence entre les résistances thermiques R et R' calculées 170 lors d'une première implémentation du procédé et les résistances thermiques R et R' calculées 170 lors d'une deuxième implémentation du procédé, en fonction d'une même valeur de référence de la résistance thermique Rp de la paroi 40, peut traduire une variation de cette valeur de référence, et donc peut permettre de quantifier une dégradation de la paroi 40, et qui plus est de discriminer de quel(s) côté(s) de la paroi cette dégradation a eu lieu, suivant que la résistance thermique R et/ou la résistance thermique R' a varié.In this context, an application example is given hereinafter which aims to determine whether or not the wall 40 of the heat exchanger has degraded between two successive implementations of the process 100, for example between a first operation of the heat exchanger and a first operation of maintenance and maintenance of the heat exchanger or between two operations of maintenance and maintenance of the heat exchanger. Whether during the first operation of the heat exchanger or after a maintenance and maintenance operation of the heat exchanger, the wall 40 may be assumed not to be covered with fouling 50, 50 ', so that the only thermal resistances involved in the heat transfer through the wall 40 are those of the bi-probe 0, the wall 40 and the convection regimes, namely Rcv and R'cv. Under these conditions and since the thermal resistance Rs of the bi-probe 0 has not varied and the convection resistors Rcv and R'cv are known, a difference between the thermal resistances R and R ' calculated 170 during a first implementation of the method and the thermal resistances R and R ' calculated 170 during a second implementation of the method, as a function of the same reference value of the thermal resistance Rp of the wall 40, may reflect a variation of this reference value, and therefore can be used to quantify a degradation of the wall 40, and moreover to discriminate on which side (s) of the wall this degradation has occurred, depending on whether the thermal resistance R and / or the thermal resistance R ' varied.

Claims (15)

  1. Dual temperature probe (0) comprising:
    - two single temperature probes (1, 2), each comprising a resistive circuit (11,21) with a heat-sensitive electrically conductive material base, each resistive circuit (11, 21) being intended to be linked to an electrical current measuring device (20), and
    - a layer (3) with a thermally insulating material base inserted between the single probes (1, 2),
    such that the dual probe (0) has a known thermal resistance Rs according to the thickness e and according to the thermal conductivity λ of the inserted layer (3),
    the dual probe being characterised in that each resistive circuit (11, 21) is furthermore intended to be linked to an electrical power device (10),
    such that the temperatures balancing the single probes (1, 2) can be different from one another, when electrical currents of different intensities are applied to the resistive circuits.
  2. Dual temperature probe (0) according to the preceding claim, wherein each single probe (1, 2) further comprises at least one encapsulator (13, 23) at least partially coating the resistive circuit (11, 21), the encapsulator (13, 23) being dielectric material-based.
  3. System (1000) for evaluating at least one functioning condition of a heat exchanger, comprising:
    - at least one dual temperature probe (0) comprising:
    ∘ two single temperature probes (1, 2) each comprising a resistive circuit (11, 12) with a thermosensitive electrically conductive material base, and
    ∘ a layer (3) with a thermally insulating material base, inserted between the single probes (1, 2),
    such that the dual probe (0) has a known thermal resistance Rs,
    - a wall (40) of a heat exchanger through which a thermal transfer is intended to be made between two fluids f and f' circulating on either side of the wall (40) and on which a clogging (50) is likely to settle,
    - an electrical power device (10),
    - a device for measuring electrical current (20), and
    - a device for supervising (30) the power device (10) and the measuring device (20), the dual probe (0) being arranged on one from among a first side and a second side of the wall (40) having a reference thermal resistance Rp,
    the system being characterised in that the electrical power device (20) is configured to supply each resistive circuit (11, 21) of the dual probe (0) and in that the device for measuring electrical current (20) is configured to measure the electrical current circulating in each resistive circuit (11, 21) of the dual probe (0),
    such that the temperatures balancing the single probes (1, 2) can be different from one another, when electrical currents of different intensities are applied to the resistive circuits, and can be measured independently of one another.
  4. Method (100) for evaluating at least one functioning condition of a heat exchanger implementing a system (1000) according to the preceding claim, comprising at least the following steps, preferably coordinates by the supervision device (30):
    from a first instant t1:
    - supplying (110) the resistive circuits (11, 21) with electrical currents of different intensities,
    - measuring (120) the voltage at the terminals of each of the resistive circuits (11, 21), and possibly the electrical current in each of the resistive circuits (11, 21), then
    - calculating (130) the temperature T1(t1), T2(t1) of each single probe (1, 2) at least according to the voltage measurement at the terminals of the corresponding resistive circuit (11, 21), and
    from a second instant t2, different from the first instant t1:
    - supplying (140) the resistive circuits (11, 21) with electrical currents of different intensities,
    - measuring (150) the voltage at the terminals of each of the resistive circuits (11,21), and possibly the electrical current in each of the resistive circuits (11,21), then
    - calculating (160) the temperature T1(t2), T2(t2) of each single probe (1, 2) at least according to the voltage measurement at the terminals of the corresponding resistive circuit (11, 21),
    the method (100) further comprising at least the following step:
    - calculating (170), according to the thermal resistance Rs of the dual probe (0), to the thermal resistance Rp of the wall (40) and to the temperatures T1(t1), T2(t1), T1(t2) and T2(t2) of the single probes (1, 2), at least one of the following functioning conditions: the temperature Tf of the fluid f of the first side of the wall (40), the thermal resistance R of the first side of the wall (40), the temperature Tf' of the fluid f' of the second side of the wall (40) and the thermal resistance R' of the second side of the wall (40).
  5. Method (100) according to the preceding claim, further comprising the following step: calculating (180) a thermal flow φ exchanged between the fluids f and f' through the wall (40) according to the temperatures Tf and Tf' of the fluids f and f' and the thermal resistances R and R'.
  6. Method (100) according to any one of claims 4 and 5, wherein each voltage measurement (120, 150), and possibly electrical current, is taken after a stationary operation of evolution of one from among a resistance of the resistive circuit (11, 21) or the temperature T1, T2 of the single probe (1, 2) has been reached.
  7. Method (100) according to any one of claims 4 to 6, wherein each of the differences between the intensities of the electrical currents supplying (110, 140) the resistive circuits (11, 21) is configured so as to induce a difference in temperatures T2(t1)-T1(t1) and T2(t2)-T2(t1) between the single probes (1, 2) perceptible by the measuring device (20) as a difference between the voltage measurements (120, 150), and possibly electrical current.
  8. Method (100) according to any one of claims 4 to 7, wherein, for one of the single probes (1, 2), the intensity of the electrical current supplying (110, 140) the corresponding resistive circuit (11, 21) is configured so as to induce a zero temperature evolution of the single probe (1, 2).
  9. Method (100) according to any one of claims 4 to 8, wherein each of the differences between the intensities of the electrical currents supplying (110, 140) the resistive circuits (11, 21) is configured so as to not modify the temperatures Tf and Tf' of the fluids f and f'.
  10. Method (100) according to any one of claims 4 to 9, wherein the difference between the intensities of the electrical currents supplying (140) the resistive circuits (11, 21) from the second instant t2 is configured so as to be difference from the difference between the intensities of the electrical currents supplying (110) the resistive circuits (11, 21) from the first instant t1.
  11. Method (100) according to any one of claims 4 to 10, wherein the instants t1 and t2 are selected sufficiently close over time to be able to ignore at least one variation in the thermal resistances R and R' of each side of the wall (40).
  12. Method (100) according to any one of claims 4 to 11, further comprising the following step: calculating (190) at least one from among the clogging resistance Re of the first side of the wall (40) and the clogging resistance R'e of the second side of the wall (40), according to one respective from among the convection resistance Rcv of the first side of the wall (40) and the convection resistance R'cv of the second side of the wall (40).
  13. Method (100) according to the preceding claim, further comprising the following step: calculating (200) at least one from among the clogging thickness of the first side of the wall (40) and the clogging thickness of the second side of the wall (40), according to one respective from among the clogging resistance Re of the first side of the wall (40) and the clogging resistance R'e of the second side of the wall (40) and one respective from among the thermal conductivity of the clogging (50) of the first side of the wall (40) and the thermal conductivity of the clogging (50') of the second side of the wall (40).
  14. Method (100) according to any one of claims 4 to 13, wherein the steps of supplying (110, 140), measuring (120, 150) and calculating temperature (130, 160) can be repeated from two instants t3 and t4, different from one another, and subsequent to the instants t1 and t2, such that the exceeding of a predetermined threshold value by at least one from among:
    - a difference between the calculated thermal resistances R (170), and
    - a difference between the calculated thermal resistances R' (170),
    that is representative of an evolution, and possibly a degradation, of the functioning conditions of the heat exchanger and, if necessary, making it possible to make a decision regarding the carrying out of a refurbishment or replacement operation of the wall (40), even of the heat exchanger.
  15. Computer program product comprising instructions, which, when they are interpreted and executed by at least one processor carrying out the calculation steps (130), (160) and (170) of the method (100) according to any one of claims 4 to 14.
EP17209128.2A 2016-12-21 2017-12-20 Device and method for evaluating at least one operating condition of a heat exchanger Active EP3339828B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1663010A FR3060741B1 (en) 2016-12-21 2016-12-21 DEVICE AND METHOD FOR EVALUATING AT LEAST ONE OPERATING CONDITION OF A HEAT EXCHANGER

Publications (2)

Publication Number Publication Date
EP3339828A1 EP3339828A1 (en) 2018-06-27
EP3339828B1 true EP3339828B1 (en) 2019-07-31

Family

ID=58645160

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17209128.2A Active EP3339828B1 (en) 2016-12-21 2017-12-20 Device and method for evaluating at least one operating condition of a heat exchanger

Country Status (2)

Country Link
EP (1) EP3339828B1 (en)
FR (1) FR3060741B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3143745A1 (en) 2022-12-19 2024-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device for detecting and characterizing a deposit of fouling on a wall, comprising a thermal probe and at least one thermal guard surrounding it.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6985196B2 (en) * 2018-03-27 2021-12-22 日東電工株式会社 Resistance measuring device, film manufacturing device and method for manufacturing conductive film
FR3116116B1 (en) * 2020-11-12 2022-11-18 Commissariat Energie Atomique Improved heat transfer coefficient determination system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1287309A1 (en) 2000-06-06 2003-03-05 Alstom Power Inc. Monitoring of fouling or of loss of material of heat transfer tubes in a combustion vessel by resistance measurements
FR2897930B1 (en) 2006-02-28 2008-05-16 Commissariat Energie Atomique PLATE HEAT EXCHANGER INCLUDING A DEVICE FOR EVALUATING ITS ENCRYPTION CONDITION
FR2932886B1 (en) 2008-06-18 2014-09-19 Electricite De France METHOD AND DEVICE FOR DETECTION AND / OR MEASUREMENT OF ENCRAGEMENT IN EXCHANGERS
FR2941300B1 (en) * 2009-01-19 2016-07-01 Neosens MICRO-SENSOR MADE IN MICROSYSTEM TECHNOLOGIES FOR THE MEASUREMENT AND / OR DETECTION OF ENCRYPTION.
US8226294B2 (en) * 2009-08-31 2012-07-24 Arizant Healthcare Inc. Flexible deep tissue temperature measurement devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3143745A1 (en) 2022-12-19 2024-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Device for detecting and characterizing a deposit of fouling on a wall, comprising a thermal probe and at least one thermal guard surrounding it.
EP4390371A1 (en) 2022-12-19 2024-06-26 Commissariat à l'énergie atomique et aux énergies alternatives Device for detecting and characterising a fouling deposit on a wall, comprising a thermal probe and at least one thermal guard surrounding same

Also Published As

Publication number Publication date
FR3060741A1 (en) 2018-06-22
EP3339828A1 (en) 2018-06-27
FR3060741B1 (en) 2018-12-14

Similar Documents

Publication Publication Date Title
EP3339828B1 (en) Device and method for evaluating at least one operating condition of a heat exchanger
EP2324338B1 (en) Method and device for the detection and/or measurement of fouling in heat exchangers
EP2382453B1 (en) Sensor, and method for continuously measuring the fouling level
FR2847982A1 (en) DEVICE AND METHODS FOR MEASURING THE PRESSURE OF HEAT LOSSES
EP2740152B1 (en) Device for localizing hot spots with heat flow meters
EP0030499A2 (en) Device sensitive to a thermal flow or a temperature gradient and assembly of such devices
EP3339836B1 (en) System and method for evaluating at least one operating condition of a heat exchanger
EP3771879B1 (en) Device for detecting and characterising clogging likely to form in a wall subjected to heat exchange
EP3435067A1 (en) System and method for evaluating at least one operating condition of a heat exchanger
EP2368108B1 (en) Device for determining a heat transfer coefficient, and associated method
CA2971662C (en) Method for the production of an optoelectronic module including a support comprising a metal substrate, a dielectric coating and a conductive layer
FR2695203A1 (en) Thermistor liquid detector.
CA2900701A1 (en) Measurement of the homogeneous temperature of a coil by increasing the resistance of a wire
FR2643717A1 (en) Method and device for measuring the thermal resistance of a body with a low thermal resistance
FR2942037A1 (en) Radiative and convective heat flow measuring device for wall of heating unit, has fluxmeters with upper surfaces covered with respective paint layers, where fluxmeters are placed side-by-side on wall so as to be located in same flux
EP4390371A1 (en) Device for detecting and characterising a fouling deposit on a wall, comprising a thermal probe and at least one thermal guard surrounding same
EP4244589B1 (en) Improved system for determining a heat exchange coefficient
FR3075959A1 (en) SYSTEM FOR DETECTING THE LEAKAGE OF AN ELECTRICITY CONDUCTIVE FLUID FROM AN ENVELOPE
EP2157402A1 (en) Device for measuring the alignment of attached structures
FR3060756A1 (en) ELECTRONIC DEVICE FOR DETECTING AN AIR FLOW
EP0446546A2 (en) Procedure and device making use of thermo-electric effects to measure a physical entity the variation of which is capable of modifying the thermophysical properties of a substance
WO2020201664A2 (en) Advantageous system for evaluating the damage to a workpiece of composite material
CN116879347A (en) Heterojunction thermophysical property measuring method and device
WO2011023916A1 (en) Microsystem sensor for measuring or detecting fouling
WO2014147316A1 (en) Device for measuring the evolution of a range of temperatures and associated method for assessing the quality of a welding operation

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20171220

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20190318

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1161410

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190815

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: FRENCH

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602017005730

Country of ref document: DE

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20190731

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1161410

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191031

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191202

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191101

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191130

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200224

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602017005730

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG2D Information on lapse in contracting state deleted

Ref country code: IS

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191030

26N No opposition filed

Effective date: 20200603

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20191231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191220

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191220

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20171220

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201231

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20201231

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190731

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20231221

Year of fee payment: 7

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20231219

Year of fee payment: 7

Ref country code: FR

Payment date: 20231218

Year of fee payment: 7

Ref country code: DE

Payment date: 20231219

Year of fee payment: 7