EP3327782A1 - Display substrate and preparation method thereof and display device - Google Patents
Display substrate and preparation method thereof and display device Download PDFInfo
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- EP3327782A1 EP3327782A1 EP16793726.7A EP16793726A EP3327782A1 EP 3327782 A1 EP3327782 A1 EP 3327782A1 EP 16793726 A EP16793726 A EP 16793726A EP 3327782 A1 EP3327782 A1 EP 3327782A1
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- pixels
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- 238000002360 preparation method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 44
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 1
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2003—Display of colours
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2074—Display of intermediate tones using sub-pixels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0443—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations
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- G—PHYSICS
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
Definitions
- Embodiments of the present invention relate to the field of display technologies, and specifically, to a display substrate and fabricating method thereof, and a display device.
- AMOLED Active-matrix organic light emitting diode
- display screens have characteristics, like fast response, higher contrast and wider view.
- OLED Organic Light Emitting Diode
- a pixel circuit has a plurality of TFT (Thin Film Transistor) and a plurality of capacitors thereon, for example, a circuit structure as shown in FIG.1 , and a schematic diagram of a corresponding pixel arrangement as shown in FIG. 2 .
- a pixel defining layer is usually employed to fill the via hole for connecting the cathode to the anode, as shown in FIG.4 , however, this may cause a reduced aperture ratio.
- the cathode and anode in FIG. 3 and FIG. 4 further comprise therebetween other layers not shown in the drawings, such as a light emitting layer and the like.
- the number of pixels in unit area can be increased, but this may lead to a problem of small capacitance.
- the capacitance may be increased in the art by providing an additional Metal3 (a metal which does not belong to a gate metal layer or source-drain metal layer) in a display substrate.
- an additional Metal3 a metal which does not belong to a gate metal layer or source-drain metal layer
- FIG.6 By adding a Metal3 as shown in FIG.6 on the basis of the structure of the display substrate shown in FIG. 5 can increase the capacitance.
- Embodiments of the present invention provide a display substrate and fabricating method thereof, and a display device, which can effectively utilize light emitting layer missing regions in pixels in a case where the light emitting layer missing regions in the pixels of a display panel inevitably lose aperture area.
- a display substrate comprising a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel, each color sub-pixel comprises a light emitting region and a light emitting layer missing region, a first driving transistor is provided in the light emitting layer missing region , for driving the color sub-pixel, a second driving transistor and a white sub-pixel corresponding to the color sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel.
- the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- each of the pixel groups comprises four color sub-pixels and four white sub-pixels.
- the four color sub-pixels in the pixel group are arranged in a 2 ⁇ 2 matrix, the light-emitting layer missing region of each color sub-pixel is located on one corner of the color sub-pixel, and the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- the color sub-pixels and the white sub-pixels are driven by a sub-pixel rendering method.
- two color sub-pixels located on one diagonal of the 2 ⁇ 2 matrix are green sub-pixels, and two color sub-pixels located on the other diagonal are blue sub-pixel and red sub-pixel respectively.
- the display substrate further comprises a planar layer provided on the first driving transistor, and the sum of the thickness of the first driving transistor and the thickness of the planar layer is equal to the thickness of the micro-cavity of the white sub-pixel.
- the second driving transistor comprises:
- a passivation layer is further provided on the source and on the drain, an anode of the white sub-pixel is provided on the passivation layer, the anode of the white sub-pixel being electrically connected to the drain through a via hole in the passivation layer, and a pixel defining layer is provided on the anode of the white sub-pixel.
- the display substrate further comprises an anode of the color sub-pixel provided in the light emitting region, wherein the gate of the second driving transistor and the anode of the color sub-pixel are formed in the same layer.
- the display substrate further comprises:
- the cathode of the color sub-pixel and the anode of the white sub-pixel are formed in the same layer.
- a display device comprising any of the foregoing display substrate.
- a fabricating method of a display substrate comprising:
- the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- each of the pixel groups comprises four color sub-pixels and four white sub-pixels, and the forming the pixel groups comprises:
- the method before the forming the second driving transistor, the method further comprises: forming a planar layer on the first driving transistor, the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel.
- the forming the second driving transistor comprises:
- the fabricating method of the display substrate further comprises:
- the fabricating method of the display substrate further comprises forming an anode of the color sub-pixel in the light emitting region, wherein the anode of the color sub-pixel is formed when the gate of the second driving transistor is formed.
- the fabricating method of the display substrate further comprises:
- the cathode of the color sub-pixel is formed when the anode of the white sub-pixel is formed.
- white light OLED i.e., WOLED
- a display substrate comprises a plurality of pixel groups, wherein each pixel group 100 comprises four color sub-pixels (101,102,103,104) and four white sub-pixels (1010, 1020, 1030, 1040), each color sub-pixel corresponds to one white sub-pixel, each color sub-pixel comprises a light emitting region and a light emitting layer missing region.
- a first driving transistor 1 is provided in the light emitting layer missing region, for driving the color sub-pixel, and a second driving transistor 2 and a white sub-pixel corresponding to the color sub-pixel are provided on the first driving transistor 1, the second driving transistor 2 for driving the white sub-pixel as shown in FIG.8 .
- each pixel group comprises four color sub-pixels and four white sub-pixels as an example.
- the thickness of the first driving transistor 1 may be equal to the thickness of a micro-cavity of the white sub-pixel, so that the first driving transistor 1 is used as the micro-cavity of the white sub-pixel.
- the light emitting region of the color sub-pixel is a region in which the light-emitting layer is located and in which light with a color corresponding to the sub-pixel in this region may be emitted, and in some embodiments, the light emitting region is also called an aperture region;
- the light emitting layer missing region of the color sub-pixel is e.g., a region in which the first driving transistor 1 for driving the color sub-pixel and/or other leads or electronic components are located and which is usually not luminous.
- providing the white sub-pixel and the second driving transistor for driving the white sub-pixel above the light emitting layer missing region enables the light emitting layer missing region to be fully utilized, thereby improving the aperture ratio.
- the pixel group 100 may comprise the white sub-pixel 1010 corresponding to the first color sub-pixel 101, the white sub-pixel 1020 corresponding to the second color sub-pixels 102, the white sub-pixel 1030 corresponding to the third color sub-pixel 103 and the white sub-pixel 1040 corresponding to the fourth color sub-pixel.
- the white sub-pixel in the embodiment of the present invention may comprise an organic light emitting material that may be provided on the anode of the white sub-pixel and a cathode of the white sub-pixel may be further provided on the organic light emitting material.
- the white sub-pixel and the driving transistor (i.e., the second driving transistor 2) of the white sub-pixel are formed on the driving transistor (i.e., the first driving transistor 1) of the color sub-pixel, and through certain process settings, the thickness of the first driving transistor 1 (specifically including for example a gate, a gate insulating layer, a source/drain, a passivation layer and a planar layer of the first driving transistor 1 and the like) may be made to be equal to the thickness of the micro-cavity of the white sub-pixel, that is, during the white sub-pixel is working, the first driving transistor 1 may be used as its micro-cavity.
- the white sub-pixel may use its micro-cavity structure to adjust a light outgoing path, and micro-cavity effects generated by the micro-cavity structure may improve light extracting rate of the corresponding structure, hence improve light emission efficiency and brightness of OLED, and further may implement WOLED display in combination with the white sub-pixel.
- a white sub-pixel and a driving transistor thereof are provided in the space on the thickness dimension of the color sub-pixel, which do not need to occupy extra space on the planar dimension of a display panel, so that the light emitting layer missing region in the color sub-pixel can be fully used.
- the four color sub-pixels in each pixel group are arranged in a 2 ⁇ 2 matrix, the light-emitting layer missing region (the region where the white sub-pixel, the first and second driving transistors are located) of each color sub-pixel is located on one corner of the color sub-pixel, and the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels respectively.
- the pixel group comprises: a first color sub-pixel 101 in the upper left, wherein a light emitting layer missing region of the first color sub-pixel 101 is in the upper left of the first sub-pixel 101; a second color sub-pixel 102 in the upper right, wherein a light emitting layer missing region of the second color sub-pixels 102 is in the upper right of the second sub-pixel 102; a third color sub-pixel 103 in the lower left, wherein a light-emitting layer missing region of the third color sub-pixel 103 is in the lower right of the third sub-pixel 103; a fourth color sub-pixel 104 in the lower right, wherein a light-emitting layer missing region of the fourth color sub-pixel 104 is in the lower left of the fourth sub-pixel 104.
- the first color sub-pixel 101, the second color sub-pixel 102, the third color sub-pixels 103, the fourth color sub-pixel 104 and the white sub-pixels 1010,1020,1030,1040 may be driven by a pixel rendering method.
- the two situations abovementioned may be avoided during displaying so that the white sub-pixels may be distributed evenly in the entirely displayed image, whereby WOLED display can be implemented well when the sub-pixel is driven by the sub-pixel rendering method for display.
- two color sub-pixels located on one diagonal of a 2 ⁇ 2 matrix of the pixel group may be provided as green sub-pixels, and two color sub-pixels located on the other diagonal of a 2 ⁇ 2 matrix of the pixel group are provided as blue sub-pixel and red sub-pixel respectively.
- the first color sub-pixel 101 and the fourth color sub-pixel 104 are green color sub-pixels, while one of the second color sub-pixel 102 and the third color sub-pixel 103 is a blue sub-pixel and the other is a red sub-pixel.
- the second color sub-pixel 102 and the third color sub-pixel 103 are green color sub-pixels, while one of the first color sub-pixel 101 and the fourth color sub-pixels 104 is a blue sub-pixel and the other is a red sub-pixel.
- each row and each column of the pixel group 100 contains one green sub-pixel, and further comprises one red sub-pixel or blue sub-pixel, so that when sub-pixels are driven using the sub-pixel rendering method, and the pixel group for displaying borrows adjacent sub-pixels, the pixel composed of the borrowed sub-pixels and the sub-pixels in the pixel group has the same proportion regarding the red, green, and blue sub-pixels of the pixel, thus achieving good sub-pixel rendering display effects.
- the first color sub-pixel 101 of the pixel group 100 is a blue sub-pixel
- the second color sub-pixel 102 is a green sub-pixel
- the third color sub-pixel 103 is a green sub-pixel
- the fourth color sub-pixel 104 is a red sub-pixel.
- the unlit sub-pixels are also indicated with color, but actually only sub-pixels in the lit pixel group and the borrowed sub-pixel appear colors
- borrowing sub-pixels of a adjacent pixel group for example, borrowing the sub-pixel in the first row of the third column on the right side that is a blue sub-pixel and the sub-pixel in the second row that is a green sub-pixel
- the two sub-pixels and the second color sub-pixel 102 and fourth color sub-pixel 104 in the pixel group 100 form a new pixel group (as indicated by dashed lines in the right block), which still remains the composition ratio with two green sub-pixels, one red sub-pixel and one blue sub-pixel.
- a new pixel group (as indicated by dashed lines in the lower block) formed by the borrowed sub-pixels and the third sub-pixel 103 and the fourth sub-pixel 104 in the pixel group 100 also remains the compositional ratio with two green sub-pixels, one red sub-pixel and one blue sub-pixel.
- the display substrate provided according to the embodiment of the present invention may also comprise a planar layer provided on the first driving transistor 1, and the sum of the thickness of the first driving transistor 1 and the thickness of the planar layer is equal to the thickness of the micro-cavity of the white sub-pixel so that the first driving transistor and the planar layer may be used together as the micro-cavity of the white sub-pixel when the white sub-pixel is working.
- the second driving transistor 2 comprises: a gate 21 provided on the planar layer; a gate insulating layer 22 provided on the gate 21; an active layer 23 provided on the gate insulating layer 22; a source 24 and a drain 25 provided on the active layer 23.
- planar layer may provide a planar condition for the gate 21 of the second driving transistor 2, of course, according to needs, the gate electrode 21 may also be formed directly on a passivation layer of the first transistor, eliminating the process to form the planar layer.
- the first driving transistor 1 may comprise: a first gate 14 provided on a substrate 10; a first gate insulating layer 15 provided on the first gate 14; a first active layer 16 provided on the first gate insulating layer 15; a first source 17 and a first drain 18 provided on the first active layer 16.
- intermediate layers like a passivation layer and a planar layer may also be provided between the source and drain of the first driving transistor 1 and the gate 21 of the second driving transistor 2.
- a passivation layer 26 is further provided on the source 24 and on the drain 25, and an anode 27 of the white sub-pixel is provided on the passivation layer 26, wherein the anode 27 of the white sub-pixel is electrically connected through a via hole in the passivation layer 26 to the drain 25, and a pixel defining layer 3 is provided on the anode 27 of the white sub-pixel.
- the display substrate further comprises an anode of the color sub-pixel provided in the light emitting region.
- the gate 21 of the second driving transistor 2 and the anode 11 of the color sub-pixel in the light-emitting region are formed in the same layer.
- the gate 21 of the second driving transistor 2 and the anode 11 of the color sub-pixel in the light-emitting region may be formed by depositing a metal layer on the planar layer located above the first driving transistor 1 and then patterning the metal layer. Forming the gate 21 of the second driving transistor 2 and the anode 11 of the color sub-pixel in the same process may reduce the number of processes, simplifying process flows.
- the display substrate provided according to an embodiment of the present invention further comprises: a color organic light emitting layer 12 provided on the anode 11 of the color sub-pixel of the light-emitting region; and a cathode 13 of the color sub-pixel provided on the color organic light emitting layer 12.
- the anode 11 of the color sub-pixel and the cathode 13 of the color sub-pixel work together to drive the color organic light emitting layer 12 to emit red, green and/or blue light.
- the cathode 13 of the color sub-pixel and the anode 27 of the white sub-pixel are formed in the same layer. Forming the anode 27 of the white sub-pixel and the cathode 13 of the color sub-pixel in the same process may reduce the number of processes, simplifying process flows.
- a display device comprising any one of the foregoing display substrates.
- the display device in the present embodiment may be an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital picture frame, a navigator and any product or component with a display function.
- fabricating method of a display substrate there is also provided a fabricating method of a display substrate. It should be noted that the fabricating method of the display substrate provided in the embodiment of the present invention may be used for fabricating any one display substrate provided in the various embodiments abovementioned, whereby the explanation and description for the display substrate abovementioned are also applicable to the fabricating method of the display substrate provided in the embodiment of the present invention.
- the display substrate fabricating method comprises:
- the thickness of the first driving transistor 1 is equal to the thickness of the micro-cavity of the white sub-pixel.
- each of the pixel groups comprises four color sub-pixels and four white sub-pixels
- the forming each color sub-pixel in the pixel group 100 comprises: forming the four color sub-pixels in each pixel group in a 2 ⁇ 2 matrix arrangement; forming the light-emitting layer missing region of each of the color sub-pixels on one corner of the color sub-pixel, wherein the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- the first color sub-pixel 101 may be formed in the upper left of the pixel group 100
- the second color sub-pixel 102 may be formed in the upper right of the pixel group 100
- the third color sub-pixel 103 may be formed in the lower left of the pixel group 100
- the fourth color sub-pixel 104 may be formed in the lower right of the pixel group 100.
- the light emitting layer missing region of the first color sub-pixel 101 may be located in the upper left of the first sub-pixel 101
- the light emitting layer missing region of the second color sub-pixels 102 may be located in the upper right of the second sub-pixel 102
- the light-emitting layer missing region of the third color sub-pixel 103 may be located in the lower right of the third sub-pixel 103
- the light-emitting layer missing region of the fourth color sub-pixel 104 may be located in the lower left of the fourth sub-pixel 104.
- the method before the forming the second driving transistor 2, the method further comprises: forming a planar layer on the first driving transistor 1, the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel.
- the forming the second driving transistor 2 comprises: forming a gate 21 on the planar layer of the first driving transistor 1, as shown in FIG.12 ; forming a gate insulating layer 22 on the gate 21, as shown in FIG.13 ; forming an active layer 23 on the gate insulating layer 22, as shown in FIG.14 ; forming a source 24 and a drain 25 on the active layer 23, as shown in FIG.15 .
- the fabricating method of the display substrate further comprises: forming a passivation layer 26 on the source 24 and on the drain 25; forming a via hole in the passivation layer 26, as shown in FIG.17 ; forming an anode 27 of the white sub-pixel on the passivation layer 26, such that the anode 27 of the white sub-pixel is electrically connected through the via hole to the drain 25, as shown in FIG.18 ; forming a pixel defining layer 3 on the anode 27 of the white sub-pixel, and finally obtaining the structure as shown in FIG.10 .
- the fabricating method of the display substrate further comprises forming an anode of the color sub-pixel in the light emitting region, and optionally the anode 11 of the color sub-pixel is formed in the light emitting region when the gate 21 of the second driving transistor 2 is formed, as shown in FIG.12 .
- the fabricating method of the display substrate further comprises: forming a color organic light emitting layer 12 (as shown in FIG.16 ) on the anode 11 of the color sub-pixel; forming a cathode 13 of the color sub-pixel on the color organic light emitting layer 12.
- the color organic light emitting layer 12 may be formed after the gate insulating layer 22 is formed, may be formed after the active layer 23 is formed, and also may be formed after the source 24 and drain 25 are formed.
- the cathode 13 of the color sub-pixel is formed when the anode 27 of the white sub-pixel is formed, as shown in FIG.18 .
- the formation processes employed in the above-described flow may comprise, for example, film formation processes like deposition and sputtering, as well as patterning processes like etching.
- the present invention may implement WOLED display by forming the white sub-pixel and the driving transistor (i.e., the second driving transistor) of the white sub-pixel on the driving transistor (i.e., the first driving transistor) of the color sub-pixel, while making full use of the space on the thickness dimension of the color sub-pixel, without occupying the space on the planar dimension of the display panel, whereby the light emitting layer missing region in the color sub-pixel is fully utilized and hence the aperture ratio may be increased.
- the driving transistor i.e., the second driving transistor
- the driving transistor i.e., the first driving transistor
- the term "first”, “second”, or “third” is merely for descriptive purposes, and cannot be construed as indicating or implying relative importance.
- the term “a plurality of” refers to two or more, unless otherwise expressly defined.
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Abstract
Description
- This application claims priority of Chinese Patent Application No.
201510437925.7, filed on July 23, 2015 - Embodiments of the present invention relate to the field of display technologies, and specifically, to a display substrate and fabricating method thereof, and a display device.
- Compared to conventional LCD panels, AMOLED (Active-matrix organic light emitting diode) display screens have characteristics, like fast response, higher contrast and wider view. Because of current driving characteristics of an OLED (Organic Light Emitting Diode), a pixel circuit has a plurality of TFT (Thin Film Transistor) and a plurality of capacitors thereon, for example, a circuit structure as shown in
FIG.1 , and a schematic diagram of a corresponding pixel arrangement as shown inFIG. 2 . - Currently, due to the increasing requirements for display performance, those skilled in the art have made various improvement attempts to enhance the display performance with respect to the design of the pixel circuit. For example, as shown in
FIG. 3 , in order to improve the risk of short circuit caused by metal profile in a via hole resulting from the anode and cathode in OLED connected though the via hole, a pixel defining layer is usually employed to fill the via hole for connecting the cathode to the anode, as shown inFIG.4 , however, this may cause a reduced aperture ratio. It is noted that, in practice, the cathode and anode inFIG. 3 and FIG. 4 further comprise therebetween other layers not shown in the drawings, such as a light emitting layer and the like. - In another example, to further improve the display performance, the number of pixels in unit area can be increased, but this may lead to a problem of small capacitance. The capacitance may be increased in the art by providing an additional Metal3 (a metal which does not belong to a gate metal layer or source-drain metal layer) in a display substrate. For example, by adding a Metal3 as shown in
FIG.6 on the basis of the structure of the display substrate shown inFIG. 5 can increase the capacitance. However, still there will be a problem of lower aperture ratio. - In summary, in order to compensate for the shortcomings of the pixel structure, it would inevitably lead to a decrease in the aperture ratio of the display panel, as well as to white light OLED (WOLED).
- Embodiments of the present invention provide a display substrate and fabricating method thereof, and a display device, which can effectively utilize light emitting layer missing regions in pixels in a case where the light emitting layer missing regions in the pixels of a display panel inevitably lose aperture area.
- According to a first aspect of the present invention, there is provided a display substrate comprising a plurality of pixel groups,
wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel,
each color sub-pixel comprises a light emitting region and a light emitting layer missing region, a first driving transistor is provided in the light emitting layer missing region , for driving the color sub-pixel,
a second driving transistor and a white sub-pixel corresponding to the color sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel. - In one embodiment, the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- In one embodiment, each of the pixel groups comprises four color sub-pixels and four white sub-pixels.
- In one embodiment, the four color sub-pixels in the pixel group are arranged in a 2 × 2 matrix, the light-emitting layer missing region of each color sub-pixel is located on one corner of the color sub-pixel, and the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- In one embodiment, the color sub-pixels and the white sub-pixels are driven by a sub-pixel rendering method.
- In one embodiment, in each of the pixel groups, two color sub-pixels located on one diagonal of the 2 × 2 matrix are green sub-pixels, and two color sub-pixels located on the other diagonal are blue sub-pixel and red sub-pixel respectively.
- In one embodiment, the display substrate further comprises a planar layer provided on the first driving transistor, and the sum of the thickness of the first driving transistor and the thickness of the planar layer is equal to the thickness of the micro-cavity of the white sub-pixel.
- In one embodiment, the second driving transistor comprises:
- a gate provided on the planar layer;
- a gate insulating layer provided on the gate;
- an active layer provided on the gate insulating layer;
- a source and a drain provided on the active layer.
- In one embodiment, a passivation layer is further provided on the source and on the drain, an anode of the white sub-pixel is provided on the passivation layer, the anode of the white sub-pixel being electrically connected to the drain through a via hole in the passivation layer, and a pixel defining layer is provided on the anode of the white sub-pixel.
- In one embodiment, the display substrate further comprises an anode of the color sub-pixel provided in the light emitting region, wherein the gate of the second driving transistor and the anode of the color sub-pixel are formed in the same layer.
- In one embodiment, the display substrate further comprises:
- a color organic light emitting layer provided on the anode of the color sub-pixel of the light-emitting region;
- a cathode of the color sub-pixel provided on the color organic light emitting layer.
- In one embodiment, the cathode of the color sub-pixel and the anode of the white sub-pixel are formed in the same layer.
- According to a second aspect of the embodiment of the present invention, there is provided a display device comprising any of the foregoing display substrate.
- According to a third aspect of the embodiment of the present invention, there is also provided a fabricating method of a display substrate, comprising:
- forming a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel, each color sub-pixel comprises a light emitting region and a light emitting layer missing region, and a first driving transistor is provided in the light emitting layer missing region, for driving the color sub-pixel,
- forming a second driving transistor on the first driving transistor of the color sub-pixel;
- forming a white sub-pixel corresponding to the color sub-pixel on the second driving transistor, wherein the second driving transistor is used for driving the white sub-pixel.
- In one embodiment, the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- In one embodiment, each of the pixel groups comprises four color sub-pixels and four white sub-pixels, and the forming the pixel groups comprises:
- forming the four color sub-pixels in each of the pixel groups in a 2 × 2 matrix arrangement;
- forming the light-emitting layer missing region of each of the color sub-pixels on one corner of the color sub-pixel, wherein the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- In one embodiment, before the forming the second driving transistor, the method further comprises:
forming a planar layer on the first driving transistor, the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel. - In one embodiment, the forming the second driving transistor comprises:
- forming a gate on the planar layer;
- forming a gate insulating layer on the gate;
- forming an active layer on the gate insulating layer;
- forming a source and a drain on the active layer.
- In one embodiment, the fabricating method of the display substrate further comprises:
- forming a passivation layer on the source and on the drain
- forming a via hole in the passivation layer;
- forming an anode of the white sub-pixel on the passivation layer, such that the anode of the white sub-pixel is electrically connected to the drain though the via hole;
- forming a pixel defining layer on the anode of the white sub-pixel.
- In one embodiment, the fabricating method of the display substrate further comprises forming an anode of the color sub-pixel in the light emitting region, wherein the anode of the color sub-pixel is formed when the gate of the second driving transistor is formed.
- In one embodiment, the fabricating method of the display substrate further comprises:
- forming a color organic light emitting layer on the anode of the color sub-pixel;
- forming a cathode of the color sub-pixel on the color organic light emitting layer.
- In one embodiment, the cathode of the color sub-pixel is formed when the anode of the white sub-pixel is formed.
- According to the technical solution of the embodiment of the present invention, through forming a white sub-pixel and a driving transistor (i.e., a second driving transistor) of the white sub-pixel on a driving transistor (i.e., a first driving transistor) of a color sub-pixel, white light OLED (i.e., WOLED) display may be implemented, while making full use of the space on the thickness dimension of the color sub-pixel, without occupying the space on the planar dimension of a display panel, whereby a light emitting layer missing region in the color sub-pixel is fully utilized.
- Features and advantages of the present invention will be more clearly understood by reference to the drawings, while the drawings are schematic and should not be construed as any limitation to the present invention, in which:
-
FIG.1 and FIG. 2 show schematic diagrams of a pixel circuit and a pixel array in the prior art; -
FIGs.3 to 6 show schematic diagrams of partial cross-sectional views of several pixel structures in the prior art; -
FIG.7 shows a schematic top view of structure of a display substrate according to one embodiment of the present invention; -
FIG.8 shows a schematic diagram of a partial cross-sectional view of a display substrate according to one embodiment of the invention; -
FIG.9 shows a schematic diagram of a pixel arrangement according to one embodiment of the present invention; -
FIG.10 shows a schematic diagram of a partial cross-sectional view of of a specific structure of a display substrate according to one embodiment of the present invention; -
FIG.11 shows a schematic flowchart of a fabricating method of a display substrate according to one embodiment of the present invention; -
FIGs.12 to 18 show specific schematic diagrams of forming a second driving transistor and the corresponding structure thereof according to one embodiment of the present invention. - To more clearly understand the above objects, features and advantages of the present invention, the present invention will be further described in detail in combination with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and features in the embodiments may be combined with each other.
- Many specific details are described in the following description for full understanding of the present invention. However, the present invention can also be implemented in other ways different from what is described herein, whereby the protection scope of the present invention is not limited by specific embodiments disclosed below.
- As shown in
FIGs. 7 and 8 , a display substrate according to one embodiment of the present invention comprises a plurality of pixel groups, wherein eachpixel group 100 comprises four color sub-pixels (101,102,103,104) and four white sub-pixels (1010, 1020, 1030, 1040), each color sub-pixel corresponds to one white sub-pixel, each color sub-pixel comprises a light emitting region and a light emitting layer missing region. As shown inFIG.8 , afirst driving transistor 1 is provided in the light emitting layer missing region, for driving the color sub-pixel, and asecond driving transistor 2 and a white sub-pixel corresponding to the color sub-pixel are provided on thefirst driving transistor 1, thesecond driving transistor 2 for driving the white sub-pixel as shown inFIG.8 . - Those skilled in the art may appreciate that the number of color sub-pixels and the number of white sub-pixels in each pixel group are not limited to 4, and may be other numbers. For the sake of convenience, the above description of the embodiments of the present invention and the following further detailed description of the embodiments of the present invention are given taking that each pixel group comprises four color sub-pixels and four white sub-pixels as an example.
- In one embodiment of the present invention, the thickness of the
first driving transistor 1 may be equal to the thickness of a micro-cavity of the white sub-pixel, so that thefirst driving transistor 1 is used as the micro-cavity of the white sub-pixel. - It should be noted that, in the embodiment of the present invention, the light emitting region of the color sub-pixel is a region in which the light-emitting layer is located and in which light with a color corresponding to the sub-pixel in this region may be emitted, and in some embodiments, the light emitting region is also called an aperture region; the light emitting layer missing region of the color sub-pixel is e.g., a region in which the
first driving transistor 1 for driving the color sub-pixel and/or other leads or electronic components are located and which is usually not luminous. However, according to the embodiment of the present invention, providing the white sub-pixel and the second driving transistor for driving the white sub-pixel above the light emitting layer missing region enables the light emitting layer missing region to be fully utilized, thereby improving the aperture ratio. - As an example, specifically, as shown in
FIG. 7 , according to different color sub-pixels where the white sub-pixels are located, thepixel group 100 may comprise thewhite sub-pixel 1010 corresponding to thefirst color sub-pixel 101, thewhite sub-pixel 1020 corresponding to thesecond color sub-pixels 102, thewhite sub-pixel 1030 corresponding to thethird color sub-pixel 103 and thewhite sub-pixel 1040 corresponding to the fourth color sub-pixel. - It should be noted that the white sub-pixel in the embodiment of the present invention may comprise an organic light emitting material that may be provided on the anode of the white sub-pixel and a cathode of the white sub-pixel may be further provided on the organic light emitting material.
- In the embodiment of the present invention, the white sub-pixel and the driving transistor (i.e., the second driving transistor 2) of the white sub-pixel are formed on the driving transistor (i.e., the first driving transistor 1) of the color sub-pixel, and through certain process settings, the thickness of the first driving transistor 1 (specifically including for example a gate, a gate insulating layer, a source/drain, a passivation layer and a planar layer of the
first driving transistor 1 and the like) may be made to be equal to the thickness of the micro-cavity of the white sub-pixel, that is, during the white sub-pixel is working, thefirst driving transistor 1 may be used as its micro-cavity. - When the display substrate of the present invention emits light in the form of top emission, the white sub-pixel may use its micro-cavity structure to adjust a light outgoing path, and micro-cavity effects generated by the micro-cavity structure may improve light extracting rate of the corresponding structure, hence improve light emission efficiency and brightness of OLED, and further may implement WOLED display in combination with the white sub-pixel. In the embodiment of the present invention, a white sub-pixel and a driving transistor thereof are provided in the space on the thickness dimension of the color sub-pixel, which do not need to occupy extra space on the planar dimension of a display panel, so that the light emitting layer missing region in the color sub-pixel can be fully used.
- In the embodiment of the present invention, the four color sub-pixels in each pixel group are arranged in a 2 × 2 matrix, the light-emitting layer missing region (the region where the white sub-pixel, the first and second driving transistors are located) of each color sub-pixel is located on one corner of the color sub-pixel, and the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels respectively.
- As an example, as shown in
FIG.7 , the pixel group comprises: afirst color sub-pixel 101 in the upper left, wherein a light emitting layer missing region of thefirst color sub-pixel 101 is in the upper left of thefirst sub-pixel 101; asecond color sub-pixel 102 in the upper right, wherein a light emitting layer missing region of thesecond color sub-pixels 102 is in the upper right of thesecond sub-pixel 102; athird color sub-pixel 103 in the lower left, wherein a light-emitting layer missing region of thethird color sub-pixel 103 is in the lower right of thethird sub-pixel 103; afourth color sub-pixel 104 in the lower right, wherein a light-emitting layer missing region of thefourth color sub-pixel 104 is in the lower left of thefourth sub-pixel 104. - In one embodiment of the present invention, the
first color sub-pixel 101, thesecond color sub-pixel 102, thethird color sub-pixels 103, thefourth color sub-pixel 104 and the white sub-pixels 1010,1020,1030,1040 may be driven by a pixel rendering method. - It should be noted that, when setting the position of the light-emitting layer missing region in each color sub-pixel, if the light-emitting layer missing region of each sub-pixel faces toward the same direction, white sub-pixel of each sub-pixel is also disposed in the same direction. In this case, while each sub-pixel is driven by the sub-pixel rendering method, since the displayed sub-pixel borrows adjacent sub-pixels and white sub-pixels in the adjacent sub-pixels all face toward the same direction, white sub-pixels in the borrowed sub-pixels in peripheral will be located on the edge of the entire image, easily enabling the observer to observe the white boundary.
- And if the light-emitting layer missing region of each sub-pixel faces toward the center, then white sub-pixels of four color sub-pixels in a
pixel group 100 are in the center of thepixel group 100, and when theentire pixel group 100 is displayed, a white region in the center of thepixel group 100 will be observed and are usually displayed as white spots. - According to the positions of the white sub-pixels in the embodiment of the present invention, the two situations abovementioned may be avoided during displaying so that the white sub-pixels may be distributed evenly in the entirely displayed image, whereby WOLED display can be implemented well when the sub-pixel is driven by the sub-pixel rendering method for display.
- In one embodiment, for each pixel group, two color sub-pixels located on one diagonal of a 2 × 2 matrix of the pixel group may be provided as green sub-pixels, and two color sub-pixels located on the other diagonal of a 2 × 2 matrix of the pixel group are provided as blue sub-pixel and red sub-pixel respectively.
- As an example, the
first color sub-pixel 101 and thefourth color sub-pixel 104 are green color sub-pixels, while one of thesecond color sub-pixel 102 and thethird color sub-pixel 103 is a blue sub-pixel and the other is a red sub-pixel. - Alternatively, the
second color sub-pixel 102 and thethird color sub-pixel 103 are green color sub-pixels, while one of thefirst color sub-pixel 101 and thefourth color sub-pixels 104 is a blue sub-pixel and the other is a red sub-pixel. - Setting the color of each color sub-pixel according to the present embodiment may ensure each row and each column of the
pixel group 100 contains one green sub-pixel, and further comprises one red sub-pixel or blue sub-pixel, so that when sub-pixels are driven using the sub-pixel rendering method, and the pixel group for displaying borrows adjacent sub-pixels, the pixel composed of the borrowed sub-pixels and the sub-pixels in the pixel group has the same proportion regarding the red, green, and blue sub-pixels of the pixel, thus achieving good sub-pixel rendering display effects. - In a specific embodiment, as shown in
FIG.9 , thefirst color sub-pixel 101 of thepixel group 100 is a blue sub-pixel, thesecond color sub-pixel 102 is a green sub-pixel, thethird color sub-pixel 103 is a green sub-pixel, and thefourth color sub-pixel 104 is a red sub-pixel. When lighting the pixel group in the upper left of four pixels (in order to show the color of each sub-pixel in the figure, the unlit sub-pixels are also indicated with color, but actually only sub-pixels in the lit pixel group and the borrowed sub-pixel appear colors), and when borrowing sub-pixels of a adjacent pixel group, for example, borrowing the sub-pixel in the first row of the third column on the right side that is a blue sub-pixel and the sub-pixel in the second row that is a green sub-pixel, the two sub-pixels and thesecond color sub-pixel 102 andfourth color sub-pixel 104 in thepixel group 100 form a new pixel group (as indicated by dashed lines in the right block), which still remains the composition ratio with two green sub-pixels, one red sub-pixel and one blue sub-pixel. Similarly, when borrowing the sub-pixels in the first and second columns of the third row downward, a new pixel group (as indicated by dashed lines in the lower block) formed by the borrowed sub-pixels and thethird sub-pixel 103 and thefourth sub-pixel 104 in thepixel group 100 also remains the compositional ratio with two green sub-pixels, one red sub-pixel and one blue sub-pixel. - As shown in
FIG.10 , the display substrate provided according to the embodiment of the present invention may also comprise a planar layer provided on thefirst driving transistor 1, and the sum of the thickness of thefirst driving transistor 1 and the thickness of the planar layer is equal to the thickness of the micro-cavity of the white sub-pixel so that the first driving transistor and the planar layer may be used together as the micro-cavity of the white sub-pixel when the white sub-pixel is working. - In one embodiment of the present invention, as shown in
FIG.10 , thesecond driving transistor 2 comprises:
agate 21 provided on the planar layer; agate insulating layer 22 provided on thegate 21; anactive layer 23 provided on thegate insulating layer 22; asource 24 and adrain 25 provided on theactive layer 23. - It needs to be noted that the planar layer may provide a planar condition for the
gate 21 of thesecond driving transistor 2, of course, according to needs, thegate electrode 21 may also be formed directly on a passivation layer of the first transistor, eliminating the process to form the planar layer. - It may be appreciated that, in the embodiment of the present invention, as shown in
FIG. 10 , thefirst driving transistor 1 may comprise: afirst gate 14 provided on asubstrate 10; a first gate insulating layer 15 provided on thefirst gate 14; a firstactive layer 16 provided on the first gate insulating layer 15; afirst source 17 and afirst drain 18 provided on the firstactive layer 16. In addition, intermediate layers like a passivation layer and a planar layer may also be provided between the source and drain of thefirst driving transistor 1 and thegate 21 of thesecond driving transistor 2. - In one embodiment, a
passivation layer 26 is further provided on thesource 24 and on thedrain 25, and ananode 27 of the white sub-pixel is provided on thepassivation layer 26, wherein theanode 27 of the white sub-pixel is electrically connected through a via hole in thepassivation layer 26 to thedrain 25, and apixel defining layer 3 is provided on theanode 27 of the white sub-pixel. - In one embodiment, the display substrate further comprises an anode of the color sub-pixel provided in the light emitting region. Preferably, the
gate 21 of thesecond driving transistor 2 and theanode 11 of the color sub-pixel in the light-emitting region are formed in the same layer. Specifically, thegate 21 of thesecond driving transistor 2 and theanode 11 of the color sub-pixel in the light-emitting region may be formed by depositing a metal layer on the planar layer located above thefirst driving transistor 1 and then patterning the metal layer. Forming thegate 21 of thesecond driving transistor 2 and theanode 11 of the color sub-pixel in the same process may reduce the number of processes, simplifying process flows. - The display substrate provided according to an embodiment of the present invention further comprises: a color organic
light emitting layer 12 provided on theanode 11 of the color sub-pixel of the light-emitting region; and acathode 13 of the color sub-pixel provided on the color organiclight emitting layer 12. Theanode 11 of the color sub-pixel and thecathode 13 of the color sub-pixel work together to drive the color organiclight emitting layer 12 to emit red, green and/or blue light. - In one embodiment, the
cathode 13 of the color sub-pixel and theanode 27 of the white sub-pixel are formed in the same layer. Forming theanode 27 of the white sub-pixel and thecathode 13 of the color sub-pixel in the same process may reduce the number of processes, simplifying process flows. - In an embodiment of the present invention, there is also provided a display device, comprising any one of the foregoing display substrates.
- It should be noted that the display device in the present embodiment may be an electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital picture frame, a navigator and any product or component with a display function.
- According to another embodiment of the present invention, there is also provided a fabricating method of a display substrate. It should be noted that the fabricating method of the display substrate provided in the embodiment of the present invention may be used for fabricating any one display substrate provided in the various embodiments abovementioned, whereby the explanation and description for the display substrate abovementioned are also applicable to the fabricating method of the display substrate provided in the embodiment of the present invention.
- As shown in
FIG.11 , the display substrate fabricating method comprises: - S1: forming a plurality of
pixel groups 100, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel, and each color sub-pixel comprises a light emitting region and a light emitting layer missing region, and a first driving transistor is provided in light emitting layer missing region, for driving the color sub-pixel, - S2: forming a
second driving transistor 2 on thefirst driving transistor 1 of the color sub-pixel; - S3: forming a white sub-pixel on the
second driving transistor 2, wherein thesecond driving transistor 2 is used for driving the white sub-pixel. - In one embodiment, the thickness of the
first driving transistor 1 is equal to the thickness of the micro-cavity of the white sub-pixel. - In one embodiment, each of the pixel groups comprises four color sub-pixels and four white sub-pixels, and the forming each color sub-pixel in the
pixel group 100 comprises: forming the four color sub-pixels in each pixel group in a 2 × 2 matrix arrangement; forming the light-emitting layer missing region of each of the color sub-pixels on one corner of the color sub-pixel, wherein the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels. - As an example, the
first color sub-pixel 101 may be formed in the upper left of thepixel group 100, thesecond color sub-pixel 102 may be formed in the upper right of thepixel group 100, thethird color sub-pixel 103 may be formed in the lower left of thepixel group 100, and thefourth color sub-pixel 104 may be formed in the lower right of thepixel group 100. Accordingly, the light emitting layer missing region of thefirst color sub-pixel 101 may be located in the upper left of thefirst sub-pixel 101, the light emitting layer missing region of thesecond color sub-pixels 102 may be located in the upper right of thesecond sub-pixel 102, the light-emitting layer missing region of thethird color sub-pixel 103 may be located in the lower right of thethird sub-pixel 103 and the light-emitting layer missing region of thefourth color sub-pixel 104 may be located in the lower left of thefourth sub-pixel 104. - In one embodiment, before the forming the
second driving transistor 2, the method further comprises: forming a planar layer on thefirst driving transistor 1, the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel. - In one embodiment, the forming the
second driving transistor 2 comprises: forming agate 21 on the planar layer of thefirst driving transistor 1, as shown inFIG.12 ; forming agate insulating layer 22 on thegate 21, as shown inFIG.13 ; forming anactive layer 23 on thegate insulating layer 22, as shown inFIG.14 ; forming asource 24 and adrain 25 on theactive layer 23, as shown inFIG.15 . - In one embodiment, the fabricating method of the display substrate further comprises: forming a
passivation layer 26 on thesource 24 and on thedrain 25; forming a via hole in thepassivation layer 26, as shown inFIG.17 ; forming ananode 27 of the white sub-pixel on thepassivation layer 26, such that theanode 27 of the white sub-pixel is electrically connected through the via hole to thedrain 25, as shown inFIG.18 ; forming apixel defining layer 3 on theanode 27 of the white sub-pixel, and finally obtaining the structure as shown inFIG.10 . - In one embodiment, the fabricating method of the display substrate further comprises forming an anode of the color sub-pixel in the light emitting region, and optionally the
anode 11 of the color sub-pixel is formed in the light emitting region when thegate 21 of thesecond driving transistor 2 is formed, as shown inFIG.12 . - In one embodiment, the fabricating method of the display substrate further comprises: forming a color organic light emitting layer 12 (as shown in
FIG.16 ) on theanode 11 of the color sub-pixel; forming acathode 13 of the color sub-pixel on the color organiclight emitting layer 12. It should be noted that, the color organiclight emitting layer 12 may be formed after thegate insulating layer 22 is formed, may be formed after theactive layer 23 is formed, and also may be formed after thesource 24 and drain 25 are formed. - In one embodiment, the
cathode 13 of the color sub-pixel is formed when theanode 27 of the white sub-pixel is formed, as shown inFIG.18 . - Wherein the formation processes employed in the above-described flow may comprise, for example, film formation processes like deposition and sputtering, as well as patterning processes like etching.
- The technical solution of the present invention has been described in detail above in combination with the drawings. Considering that the light emitting layer missing region in the pixel of the display substrate in the prior art certainly loses an aperture area, the present invention may implement WOLED display by forming the white sub-pixel and the driving transistor (i.e., the second driving transistor) of the white sub-pixel on the driving transistor (i.e., the first driving transistor) of the color sub-pixel, while making full use of the space on the thickness dimension of the color sub-pixel, without occupying the space on the planar dimension of the display panel, whereby the light emitting layer missing region in the color sub-pixel is fully utilized and hence the aperture ratio may be increased.
- It should be noted that, in the drawings, for the sake of clarity, the sizes of layers and regions may be exaggerated. And it may be appreciated that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may exist an intermediate layer. Further, it may be appreciated that when an element or layer is referred to as being "below" another element or layer, it can be directly below the other element, or there may exist one or more intermediate layers or elements. In addition, it also may be appreciated that when a layer or element is referred to as being "between" two layers or elements, it can be the unique layer between the two layers or elements, or there also may exist one or more intermediate layers or elements. Throughout similar reference signs indicate similar elements.
- In the present invention, the term "first", "second", or "third" is merely for descriptive purposes, and cannot be construed as indicating or implying relative importance. The term "a plurality of" refers to two or more, unless otherwise expressly defined.
- The foregoing is only preferred embodiments of the present invention but is not to limit the present invention. To those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent substitution, or improvement made within the spirit and principles of the present invention, should be comprised within the scope of protection of the present invention.
Claims (22)
- A display substrate, characterized by comprising a plurality of pixel groups,
Wherein, each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel,
each color sub-pixel comprises a light emitting region and a light emitting layer missing region, a first driving transistor is provided in the light emitting layer missing region, for driving the color sub-pixel,
a second driving transistor and a white sub-pixel corresponding to the color sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel. - The display substrate according to claim 1, characterized in that the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- The display substrate according to claim 1 or 2, characterized in that each of the pixel groups comprises four color sub-pixels and four white sub-pixels.
- The display substrate according to claim 3, characterized in that the four color sub-pixels in the pixel group are arranged in a 2 × 2 matrix, the light-emitting layer missing region of each color sub-pixel is located on one corner of the color sub-pixel, and the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- The display substrate according to claim 4, characterized in that the color sub-pixels and the white sub-pixels are driven by a sub-pixel rendering method.
- The display substrate according to claim 5, characterized in that in each of the pixel groups, two color sub-pixels located on one diagonal of the 2 × 2 matrix are green sub-pixels, and two color sub-pixels located on the other diagonal are blue sub-pixel and red sub-pixel respectively.
- The display substrate according to claim 1 or 2, characterized by further comprising:
a planar layer provided on the first driving transistor, and the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel. - The display substrate according to claim 7, characterized in that the second driving transistor comprises:a gate provided on the planar layer;a gate insulating layer provided on the gate;an active layer provided on the gate insulating layer; anda source and a drain provided on the active layer.
- The display substrate according to claim 8, characterized in that a passivation layer is further provided on the source and on the drain, an anode of the white sub-pixel is provided on the passivation layer, the anode of the white sub-pixel being electrically connected to the drain through a via hole in the passivation layer, and a pixel defining layer is provided on the anode of the white sub-pixel.
- The display substrate according to claim 9, characterized by further comprising an anode of the color sub-pixel provided in the light emitting region, wherein the gate of the second driving transistor and the anode of the color sub-pixel are formed in the same layer.
- The display substrate according to claim 10, characterized by further comprising:a color organic light emitting layer provided on the anode of the color sub-pixel of the light-emitting region;a cathode of the color sub-pixel provided on the color organic light emitting layer.
- The display substrate according to claim 11, characterized in that the cathode of the color sub-pixel and the anode of the white sub-pixel are formed in the same layer.
- A display device characterized by comprising the display substrate according to any of claims 1 to 12.
- A fabricating method of a display substrate, characterized by comprising:forming a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels, each color sub-pixel corresponding to one white sub-pixel, each color sub-pixel comprises a light emitting region and a light emitting layer missing region, and a first driving transistor is provided in the light emitting layer missing region, for driving the color sub-pixel,forming a second driving transistor on the first driving transistor of the color sub-pixel; andforming a white sub-pixel corresponding to the color sub-pixel on the second driving transistor, wherein the second driving transistor is used for driving the white sub-pixel.
- The fabricating method of the display substrate according to claim 14, characterized in that the thickness of the first driving transistor is equal to the thickness of the micro-cavity of the white sub-pixel.
- The fabricating method of the display substrate according to claim 14 or 15, characterized in that each of the pixel groups comprises four color sub-pixels and four white sub-pixels, and forming the pixel groups comprises:forming the four color sub-pixels in each of the pixel groups in a 2 × 2 matrix arrangement; andforming the light-emitting layer missing region of each of the color sub-pixels on one corner of the color sub-pixel, wherein the light emitting layer missing regions of different color sub-pixels in the same pixel group are located on corners in different directions of the different color sub-pixels.
- The fabricating method of the display substrate according to claim 14 or 15, characterized in that, before forming the second driving transistor, the method further comprises:
forming a planar layer on the first driving transistor, the sum of the thickness of the first driving transistor and the thickness of the planar layer being equal to the thickness of the micro-cavity of the white sub-pixel. - The fabricating method of the display substrate according to claim 17, characterized in that forming the second driving transistor comprises:forming a gate on the planar layer;forming a gate insulating layer on the gate;forming an active layer on the gate insulating layer; andforming a source and a drain on the active layer.
- The fabricating method of the display substrate according to claim 18, characterized by further comprising:forming a passivation layer on the source and on the drainforming a via hole in the passivation layer;forming an anode of the white sub-pixel on the passivation layer, such that the anode of the white sub-pixel is electrically connected to the drain through the via hole; andforming a pixel defining layer on the anode of the white sub-pixel.
- The fabricating method of the display substrate according to claim 19, characterized by further comprising forming an anode of the color sub-pixel in the light emitting region, wherein the anode of the color sub-pixel is formed when the gate of the second driving transistor is formed.
- The fabricating method of the display substrate according to claim 20, characterized by further comprising:forming a color organic light emitting layer on the anode of the color sub-pixel; andforming a cathode of the color sub-pixel on the color organic light emitting layer.
- The fabricating method of the display substrate according to claim 21, characterized in that the cathode of the color sub-pixel is formed when the anode of the white sub-pixel is formed.
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CN201510437925.7A CN104966728B (en) | 2015-07-23 | 2015-07-23 | Display base plate and preparation method thereof and display device |
PCT/CN2016/071333 WO2017012316A1 (en) | 2015-07-23 | 2016-01-19 | Display substrate and preparation method thereof and display device |
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EP3327782A4 EP3327782A4 (en) | 2019-04-17 |
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US (1) | US10062311B2 (en) |
EP (1) | EP3327782B1 (en) |
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CN104966728B (en) * | 2015-07-23 | 2017-12-08 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof and display device |
JP2017076174A (en) * | 2015-10-13 | 2017-04-20 | 株式会社ジャパンディスプレイ | Display device |
CN108281476B (en) * | 2018-03-30 | 2024-05-28 | 京东方科技集团股份有限公司 | Pixel defining layer, display panel, manufacturing method of pixel defining layer and display panel, and display device |
CN109300945B (en) * | 2018-09-27 | 2020-07-28 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and display panel |
FR3087582B1 (en) * | 2018-10-22 | 2021-09-03 | Microoled | DAY AND NIGHT DISPLAY DEVICE |
CN111312766B (en) * | 2020-02-21 | 2022-12-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
GB2618715A (en) * | 2021-07-20 | 2023-11-15 | Boe Technology Group Co Ltd | Display substrate, display panel, and display apparatus |
US12087222B2 (en) * | 2022-03-31 | 2024-09-10 | Meta Platforms Technologies, Llc | Subpixels with reduced dimensions by using shared switching transistors |
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US7583279B2 (en) * | 2004-04-09 | 2009-09-01 | Samsung Electronics Co., Ltd. | Subpixel layouts and arrangements for high brightness displays |
KR20080011872A (en) * | 2006-08-01 | 2008-02-11 | 삼성전자주식회사 | Liquid crystal display panel |
EP2239798A1 (en) * | 2009-04-07 | 2010-10-13 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Patterning the emission colour in top-emissive OLEDs |
KR102089324B1 (en) * | 2013-09-30 | 2020-03-16 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device |
CN103489894B (en) * | 2013-10-09 | 2016-08-17 | 合肥京东方光电科技有限公司 | Active matrix organic electroluminescent display device, display device and preparation method thereof |
CN104716167B (en) * | 2015-04-13 | 2017-07-25 | 京东方科技集团股份有限公司 | A kind of organic elctroluminescent device, its preparation method and display device |
CN104966728B (en) * | 2015-07-23 | 2017-12-08 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof and display device |
CN105428392A (en) * | 2015-12-31 | 2016-03-23 | 京东方科技集团股份有限公司 | Organic electroluminescent display device and preparation method thereof |
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EP3327782B1 (en) | 2022-03-02 |
CN104966728B (en) | 2017-12-08 |
US10062311B2 (en) | 2018-08-28 |
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