EP3266763A4 - Diazadienyl compound, raw material for forming thin film, method for producing thin film, and diazadiene compound - Google Patents

Diazadienyl compound, raw material for forming thin film, method for producing thin film, and diazadiene compound Download PDF

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Publication number
EP3266763A4
EP3266763A4 EP16761428.8A EP16761428A EP3266763A4 EP 3266763 A4 EP3266763 A4 EP 3266763A4 EP 16761428 A EP16761428 A EP 16761428A EP 3266763 A4 EP3266763 A4 EP 3266763A4
Authority
EP
European Patent Office
Prior art keywords
thin film
compound
raw material
diazadiene
diazadienyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16761428.8A
Other languages
German (de)
French (fr)
Other versions
EP3266763A1 (en
EP3266763B1 (en
Inventor
Tomoharu Yoshino
Masaki ENZU
Akihiro Nishida
Nana SUGIURA
Atsushi Sakurai
Makoto Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of EP3266763A1 publication Critical patent/EP3266763A1/en
Publication of EP3266763A4 publication Critical patent/EP3266763A4/en
Application granted granted Critical
Publication of EP3266763B1 publication Critical patent/EP3266763B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/02—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups
    • C07C251/04—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms
    • C07C251/06—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton
    • C07C251/08—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton containing imino groups having carbon atoms of imino groups bound to hydrogen atoms or to acyclic carbon atoms to carbon atoms of a saturated carbon skeleton being acyclic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Chemically Coating (AREA)
EP16761428.8A 2015-03-06 2016-02-12 Diazadienyl compound, raw material for forming thin film, method for producing thin film, and diazadiene compound Active EP3266763B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015044993A JP6465699B2 (en) 2015-03-06 2015-03-06 Diazadienyl compound, raw material for thin film formation, method for producing thin film, and diazadiene compound
PCT/JP2016/054116 WO2016143456A1 (en) 2015-03-06 2016-02-12 Diazadienyl compound, raw material for forming thin film, method for producing thin film, and diazadiene compound

Publications (3)

Publication Number Publication Date
EP3266763A1 EP3266763A1 (en) 2018-01-10
EP3266763A4 true EP3266763A4 (en) 2018-11-07
EP3266763B1 EP3266763B1 (en) 2020-01-01

Family

ID=56876492

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16761428.8A Active EP3266763B1 (en) 2015-03-06 2016-02-12 Diazadienyl compound, raw material for forming thin film, method for producing thin film, and diazadiene compound

Country Status (8)

Country Link
US (1) US20180037540A1 (en)
EP (1) EP3266763B1 (en)
JP (1) JP6465699B2 (en)
KR (1) KR102441169B1 (en)
CN (1) CN107428677B (en)
IL (1) IL254192B (en)
TW (1) TWI678355B (en)
WO (1) WO2016143456A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6735163B2 (en) 2016-06-22 2020-08-05 株式会社Adeka Vanadium compound, thin film forming raw material, and thin film manufacturing method
JP2018035072A (en) * 2016-08-29 2018-03-08 株式会社Adeka Diazadienyl compound, raw material for forming thin film, and method for producing thin film
WO2018187781A2 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Metal precursors with modified diazabutadiene ligands for cvd and ald applications and methods of use
US10106893B1 (en) 2017-04-07 2018-10-23 Applied Materials, Inc. Iridium precursors for ALD and CVD thin film deposition and uses thereof
KR102474876B1 (en) * 2017-06-15 2022-12-07 삼성전자주식회사 Tungsten precursor and Method of forming a tungsten-containing layer using the same
US10174423B2 (en) * 2017-06-28 2019-01-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium-containing film forming compositions and vapor deposition of Niobium-containing films
CN111936664A (en) * 2018-03-19 2020-11-13 应用材料公司 Method for depositing a coating on an aerospace component
US11440929B2 (en) * 2018-06-19 2022-09-13 Versum Materials Us, Llc Bis(diazadiene)cobalt compounds, method of making and method of use thereof
TW202010746A (en) * 2018-06-30 2020-03-16 美商應用材料股份有限公司 TiN-containing precursors and methods of depositing tin-containing films
US11473198B2 (en) 2019-01-25 2022-10-18 Applied Materials, Inc. Homoleptic lanthanide deposition precursors
CN111254412A (en) * 2020-03-27 2020-06-09 江苏迈纳德微纳技术有限公司 Atomic layer deposition technology and method for preparing iridium film
US20220259734A1 (en) * 2021-02-16 2022-08-18 Applied Materials, Inc. Reducing Agents for Atomic Layer Deposition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8796483B2 (en) * 2010-04-01 2014-08-05 President And Fellows Of Harvard College Cyclic metal amides and vapor deposition using them
US9353437B2 (en) * 2010-11-17 2016-05-31 Up Chemical Co., Ltd. Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
US9206507B2 (en) * 2011-09-27 2015-12-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions
JP2014534952A (en) * 2011-09-27 2014-12-25 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Tungsten diazabutadiene molecules, their synthesis and their use in the deposition of tungsten-containing films
JP5901327B2 (en) 2012-02-09 2016-04-06 キヤノン株式会社 Developing device, process cartridge, and image forming apparatus
JP5842687B2 (en) * 2012-03-15 2016-01-13 宇部興産株式会社 Cobalt film forming raw material and method for producing cobalt-containing thin film using the raw material
JP5825169B2 (en) * 2012-03-27 2015-12-02 宇部興産株式会社 Method for producing cobalt-containing thin film
US9187511B2 (en) * 2012-05-01 2015-11-17 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules
CN106232611A (en) * 2013-10-28 2016-12-14 赛孚思科技有限公司 Comprise the metal complex of amide groups imine ligands
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HANS-WERNER FRIIHAUF ET AL: "KOORDINATION VON 1,4-DIAZA-WDIENEN (DAD) AN CARBONYLDIEISEN FRAGMENTE III *. UNSYMMETRISCH SUBSTITUIERTE DIAZABUTADIENE UND 'H- NMR-SPEKTROSKOPISCHE IDENTIFIZlERUNG DER REGIOISOMEREN (DAD)F%(CO),KOMPLEXE VON t-Bu-N=CH-CH=N-i-Pr", JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1 January 1986 (1986-01-01), pages 183 - 193, XP055511449, Retrieved from the Internet <URL:https://ac.els-cdn.com/0022328X86800092/1-s2.0-0022328X86800092-main.pdf?_tid=3c61c9d2-7b77-411f-b998-c048b632d860&acdnat=1538422606_d93a4f7ef3cdb4e0fa933e8fdd5404c7> [retrieved on 20181001] *
MASAHIKO OCHIAI ET AL: "Reactions of a Platinum(III) Dimeric Complex with Alkynes in Water: Novel Approach to [alpha]-Aminoketone, [alpha]-Iminoketone, and [alpha],[beta]-Diimine via Ketonyl-Pt(III) Dinuclear Complexes", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, vol. 126, no. 8, 1 March 2004 (2004-03-01), US, pages 2536 - 2545, XP055511437, ISSN: 0002-7863, DOI: 10.1021/ja0302634 *
See also references of WO2016143456A1 *

Also Published As

Publication number Publication date
IL254192B (en) 2020-07-30
KR102441169B1 (en) 2022-09-06
CN107428677A (en) 2017-12-01
CN107428677B (en) 2022-04-05
KR20170127492A (en) 2017-11-21
EP3266763A1 (en) 2018-01-10
JP6465699B2 (en) 2019-02-06
WO2016143456A1 (en) 2016-09-15
TW201704200A (en) 2017-02-01
US20180037540A1 (en) 2018-02-08
IL254192A0 (en) 2017-10-31
EP3266763B1 (en) 2020-01-01
TWI678355B (en) 2019-12-01
JP2016164131A (en) 2016-09-08

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