EP3243273A4 - Vco à faible force de traction insensible et à mode commun sans mémoire - Google Patents

Vco à faible force de traction insensible et à mode commun sans mémoire Download PDF

Info

Publication number
EP3243273A4
EP3243273A4 EP16735368.9A EP16735368A EP3243273A4 EP 3243273 A4 EP3243273 A4 EP 3243273A4 EP 16735368 A EP16735368 A EP 16735368A EP 3243273 A4 EP3243273 A4 EP 3243273A4
Authority
EP
European Patent Office
Prior art keywords
memoryless
vco
common
low pulling
mode insensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16735368.9A
Other languages
German (de)
English (en)
Other versions
EP3243273A1 (fr
Inventor
Farbod Aram
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ethertronics Inc
Original Assignee
Ethertronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/745,261 external-priority patent/US9543916B2/en
Application filed by Ethertronics Inc filed Critical Ethertronics Inc
Priority claimed from PCT/US2016/012370 external-priority patent/WO2016112125A1/fr
Publication of EP3243273A1 publication Critical patent/EP3243273A1/fr
Publication of EP3243273A4 publication Critical patent/EP3243273A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1293—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45306—Indexing scheme relating to differential amplifiers the common gate stage implemented as dif amp eventually for cascode dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45481—Indexing scheme relating to differential amplifiers the CSC comprising only a direct connection to the supply voltage, no other components being present

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
EP16735368.9A 2015-01-06 2016-01-06 Vco à faible force de traction insensible et à mode commun sans mémoire Withdrawn EP3243273A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562100397P 2015-01-06 2015-01-06
US14/745,261 US9543916B2 (en) 2014-06-19 2015-06-19 Active device which has a high breakdown voltage, is memory-less, traps even harmonic signals and circuits used therewith
PCT/US2016/012370 WO2016112125A1 (fr) 2015-01-06 2016-01-06 Vco à faible force de traction insensible et à mode commun sans mémoire

Publications (2)

Publication Number Publication Date
EP3243273A1 EP3243273A1 (fr) 2017-11-15
EP3243273A4 true EP3243273A4 (fr) 2018-10-17

Family

ID=60021588

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16735368.9A Withdrawn EP3243273A4 (fr) 2015-01-06 2016-01-06 Vco à faible force de traction insensible et à mode commun sans mémoire

Country Status (1)

Country Link
EP (1) EP3243273A4 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284679A1 (en) * 2005-06-20 2006-12-21 Chipcon As Integrated circuit having a low power, gain-enhanced, low noise amplifying circuit
US20080079494A1 (en) * 2006-09-26 2008-04-03 Farbod Aram Broadband low noise amplifier
EP2079162A1 (fr) * 2008-01-11 2009-07-15 Infineon Technologies AG Appareil et procédé disposant d'un bruit de scintillation réduit
US20110221530A1 (en) * 2010-03-09 2011-09-15 Sehat Sutardja Class ab amplifiers
US8081032B1 (en) * 2006-09-26 2011-12-20 Project Ft, Inc. Broadband LNA with filter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284679A1 (en) * 2005-06-20 2006-12-21 Chipcon As Integrated circuit having a low power, gain-enhanced, low noise amplifying circuit
US20080079494A1 (en) * 2006-09-26 2008-04-03 Farbod Aram Broadband low noise amplifier
US8081032B1 (en) * 2006-09-26 2011-12-20 Project Ft, Inc. Broadband LNA with filter
EP2079162A1 (fr) * 2008-01-11 2009-07-15 Infineon Technologies AG Appareil et procédé disposant d'un bruit de scintillation réduit
US20110221530A1 (en) * 2010-03-09 2011-09-15 Sehat Sutardja Class ab amplifiers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016112125A1 *

Also Published As

Publication number Publication date
EP3243273A1 (fr) 2017-11-15

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Owner name: ETHERTRONICS, INC.

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Effective date: 20180919

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Ipc: H03F 3/45 20060101ALI20180913BHEP

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