EP3149740A4 - Thyristor volatile random access memory and methods of manufacture - Google Patents

Thyristor volatile random access memory and methods of manufacture Download PDF

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Publication number
EP3149740A4
EP3149740A4 EP15845023.9A EP15845023A EP3149740A4 EP 3149740 A4 EP3149740 A4 EP 3149740A4 EP 15845023 A EP15845023 A EP 15845023A EP 3149740 A4 EP3149740 A4 EP 3149740A4
Authority
EP
European Patent Office
Prior art keywords
thyristor
manufacture
methods
random access
access memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15845023.9A
Other languages
German (de)
French (fr)
Other versions
EP3149740A1 (en
Inventor
Harry Luan
Bruce Bateman
Valery Axelrad
Charlie Cheng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kilopass Technology Inc
Original Assignee
Kilopass Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/590,834 external-priority patent/US9449669B2/en
Application filed by Kilopass Technology Inc filed Critical Kilopass Technology Inc
Publication of EP3149740A1 publication Critical patent/EP3149740A1/en
Publication of EP3149740A4 publication Critical patent/EP3149740A4/en
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4026—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using bipolar transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/4067—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66121—Multilayer diodes, e.g. PNPN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
EP15845023.9A 2014-09-25 2015-09-25 Thyristor volatile random access memory and methods of manufacture Withdrawn EP3149740A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462055582P 2014-09-25 2014-09-25
US14/590,834 US9449669B2 (en) 2014-09-25 2015-01-06 Cross-coupled thyristor SRAM circuits and methods of operation
US201562186336P 2015-06-29 2015-06-29
PCT/US2015/052499 WO2016049601A1 (en) 2014-09-25 2015-09-25 Thyristor volatile random access memory and methods of manufacture

Publications (2)

Publication Number Publication Date
EP3149740A1 EP3149740A1 (en) 2017-04-05
EP3149740A4 true EP3149740A4 (en) 2017-11-01

Family

ID=55582136

Family Applications (3)

Application Number Title Priority Date Filing Date
EP15845023.9A Withdrawn EP3149740A4 (en) 2014-09-25 2015-09-25 Thyristor volatile random access memory and methods of manufacture
EP15844668.2A Withdrawn EP3149735A4 (en) 2014-09-25 2015-09-25 Power reduction in thyristor random access memory
EP15844478.6A Withdrawn EP3149741A4 (en) 2014-09-25 2015-09-25 Methods of retaining and refreshing data in a thyristor random access memory

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP15844668.2A Withdrawn EP3149735A4 (en) 2014-09-25 2015-09-25 Power reduction in thyristor random access memory
EP15844478.6A Withdrawn EP3149741A4 (en) 2014-09-25 2015-09-25 Methods of retaining and refreshing data in a thyristor random access memory

Country Status (2)

Country Link
EP (3) EP3149740A4 (en)
WO (3) WO2016049608A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180130804A1 (en) * 2016-11-08 2018-05-10 Kilopass Technology, Inc. Vertical Thyristor Cell and Memory Array with Silicon Germanium Base Regions

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090213648A1 (en) * 2007-12-21 2009-08-27 Qimonda Ag Integrated Circuit Comprising a Thyristor and Method of Controlling a Memory Cell Comprising a Thyristor
US20120228629A1 (en) * 2011-03-08 2012-09-13 Micron Technology, Inc. Thyristors, Methods of Programming Thyristors, and Methods of Forming Thyristors
US20120281468A1 (en) * 2011-05-04 2012-11-08 Qingqing Liang Semiconductor device and semiconductor memory device
US8441881B1 (en) * 2010-07-02 2013-05-14 T-Ram Semiconductor Tracking for read and inverse write back of a group of thyristor-based memory cells

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US6026042A (en) * 1998-04-10 2000-02-15 Micron Technology, Inc. Method and apparatus for enhancing the performance of semiconductor memory devices
US6229161B1 (en) * 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
EP1384232A4 (en) * 2001-04-05 2008-11-19 T Ram Inc Dynamic data restore in thyristor-based memory device
US6627924B2 (en) * 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
US6906354B2 (en) * 2001-06-13 2005-06-14 International Business Machines Corporation T-RAM cell having a buried vertical thyristor and a pseudo-TFT transfer gate and method for fabricating the same
CA2447204C (en) * 2002-11-29 2010-03-23 Memory Management Services Ltd. Error correction scheme for memory
KR100557637B1 (en) * 2004-01-06 2006-03-10 주식회사 하이닉스반도체 Low power semiconductor memory device
US7460395B1 (en) * 2005-06-22 2008-12-02 T-Ram Semiconductor, Inc. Thyristor-based semiconductor memory and memory array with data refresh
US7542340B2 (en) * 2006-07-11 2009-06-02 Innovative Silicon Isi Sa Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8547756B2 (en) * 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US20080151670A1 (en) * 2006-12-22 2008-06-26 Tomohiro Kawakubo Memory device, memory controller and memory system
US7630235B2 (en) * 2007-03-28 2009-12-08 Globalfoundries Inc. Memory cells, memory devices and integrated circuits incorporating the same
US8116157B2 (en) * 2007-11-20 2012-02-14 Qimonda Ag Integrated circuit
US8130547B2 (en) * 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8120951B2 (en) * 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
WO2010104918A1 (en) * 2009-03-10 2010-09-16 Contour Semiconductor, Inc. Three-dimensional memory array comprising vertical switches having three terminals
US8139391B2 (en) * 2009-04-03 2012-03-20 Sandisk 3D Llc Multi-bit resistance-switching memory cell
JP2011108327A (en) * 2009-11-18 2011-06-02 Toshiba Corp Non-volatile semiconductor memory device
CN103339732B (en) * 2010-10-12 2016-02-24 斯兰纳半导体美国股份有限公司 There is the vertical semiconductor devices of the substrate be thinned
US8824230B2 (en) * 2011-09-30 2014-09-02 Qualcomm Incorporated Method and apparatus of reducing leakage power in multiple port SRAM memory cell
US8947925B2 (en) * 2012-08-17 2015-02-03 The University Of Connecticut Thyristor memory cell integrated circuit
US20150228325A1 (en) * 2012-08-29 2015-08-13 Ps4 Luxco S.A.R.L. Fbc memory or thyristor memory for refreshing unused word line
US20140269046A1 (en) * 2013-03-15 2014-09-18 Micron Technology, Inc. Apparatuses and methods for use in selecting or isolating memory cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090213648A1 (en) * 2007-12-21 2009-08-27 Qimonda Ag Integrated Circuit Comprising a Thyristor and Method of Controlling a Memory Cell Comprising a Thyristor
US8441881B1 (en) * 2010-07-02 2013-05-14 T-Ram Semiconductor Tracking for read and inverse write back of a group of thyristor-based memory cells
US20120228629A1 (en) * 2011-03-08 2012-09-13 Micron Technology, Inc. Thyristors, Methods of Programming Thyristors, and Methods of Forming Thyristors
US20120281468A1 (en) * 2011-05-04 2012-11-08 Qingqing Liang Semiconductor device and semiconductor memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2016049601A1 *

Also Published As

Publication number Publication date
EP3149735A1 (en) 2017-04-05
WO2016049601A1 (en) 2016-03-31
WO2016049608A1 (en) 2016-03-31
EP3149735A4 (en) 2018-06-13
WO2016049606A1 (en) 2016-03-31
EP3149740A1 (en) 2017-04-05
EP3149741A4 (en) 2018-01-17
EP3149741A1 (en) 2017-04-05

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