EP3129518A1 - Process for producing a graphene film - Google Patents
Process for producing a graphene filmInfo
- Publication number
- EP3129518A1 EP3129518A1 EP15714579.8A EP15714579A EP3129518A1 EP 3129518 A1 EP3129518 A1 EP 3129518A1 EP 15714579 A EP15714579 A EP 15714579A EP 3129518 A1 EP3129518 A1 EP 3129518A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- carbon source
- solid carbon
- gas
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Definitions
- the invention relates to a method of producing a graphene film and also relates to a device configured to produce a graphene film.
- graphene has generated a growing interest in the scientific and industrial sectors.
- Graphene is indeed a promising candidate for many applications: energy storage, elaboration of transparent electrodes, super capacitors, etc.
- One of the current challenges is to produce good quality graphene, ie a continuous film with low defect densities and uniform thickness, at low cost, reproducibly and on a large scale.
- CVD chemical vapor deposition
- CVD processes are very attractive because they make it possible to obtain thin carbonaceous layers of high quality.
- the process of forming graphene on a substrate by CVD takes place in two stages.
- pyrolysis is carried out on a gas containing carbon atoms, generally it is a hydrocarbon. Pyrolysis dissociates the gas and forms carbon radicals.
- the graphene film is formed on the substrate from the carbon radicals.
- Many hydrocarbons can be used to synthesize graphene.
- the article by K. Wassei et al. (Small 8 (2012), No. 9, 1415-1422) describes, for example, the use of methane, ethane or propane.
- the substrate is copper, it has a thickness of 25 ⁇ .
- the temperature used during the deposition process is 1000 ° C and the pressures are between 250 and 1000mTorr.
- Methane is most often used because it allows to form graphene films of better qualities.
- Graphene can also be deposited on ruthenium crystals Ru (00001) and iridium Ir (1 1 1) using as a carbon source of ethylene gas (New Journal of Physics 1 1 (2009) 063046), or on platinum substrates 200 ⁇ m thick from methane, the substrate being heated to above 1000 ° C (Nature Communications 3: 699, DOI 10.1038).
- CVD deposits are made at high temperatures (1000-1100 ° C) to dissociate hydrocarbons and form graphene.
- the object of the invention is to overcome the drawbacks of the prior art and, in particular, to propose a production method for depositing a graphene film on thin metallic layers.
- FIG. 1 to 4 show, schematically, in section, the device of the method of producing a graphene film according to different embodiments
- FIG. 5 represents a photograph obtained by transmission electron microscopy of a graphene film produced according to the production method
- FIG. 6 represents a Raman spectrum of 1 st and 2 nd orders of the graphene film of FIG. . Description of a preferred embodiment of the invention
- the process for producing a graphene film comprises the following successive steps:
- the carbon source 2 is a source of solid carbon.
- the gas is hydrocarbon-free.
- the carbon source 2 is formed of at least one carbon filament.
- the filament is disposed between the substrate and the gas inlet.
- Filament means an element of fine and elongated shape, such as a wire.
- the filament is electrically conductive.
- the carbon source 2 can comprise several filaments.
- the filaments advantageously form a plane parallel to the surface of the substrate.
- filaments are, advantageously, both all arranged at the same distance from the surface of the substrate and parallel to each other, so as to form a homogeneous deposit.
- the filaments are shown in section.
- the filaments are equidistant from one another.
- the filaments are crisscrossed and parallel to the surface of the substrate so as to form a grid.
- the surface of the substrate is covered more evenly by the filaments.
- the grid preferably defines a plane parallel to the surface of the substrate.
- the heating of the carbon source 2 is achieved by passing a current in said source. It could also be heated by induction heating, by laser.
- the filaments are heated by Joule effect.
- the carbon filaments form carbon radicals, necessary for the formation of graphene.
- the amount of carbon radicals formed is relatively small, which makes it possible to form a graphene film in a controlled manner.
- the carbon source 2 is a solid element comprising at least 98% by mass of carbon.
- the carbon source 2 is, preferably, graphite.
- graphite is meant that the carbon source comprises at least 98% by weight of graphite, and preferably at least 99.5% by mass of graphite.
- the carbon source 2 may be further formed of carbon nanotubes.
- the filaments are often made of tungsten.
- the carbon of the hydrocarbons reacts with the tungsten, forming parasitic tungsten carbide, which contaminates the reaction chamber.
- JP2003206196 also discloses a CVD device not using tungsten.
- the filaments are carbon based.
- the CVD device is used to obtain high quality diamonds on silicon wafers.
- the filaments are produced from a resin and a powder of carbonaceous particles.
- the filaments are heated to a temperature of 2050 ° C under a methanol-charged atmosphere.
- the methanol is then decomposed, carbon radicals are produced and diamond particles are formed.
- the temperature of the substrate is 900 ° C.
- the temperature of the substrate is nevertheless still too high.
- the process, even if it is adapted to form diamond particles, does not make it possible to form graphene on thin layers. Unlike conventional methods, the process for forming the graphene film does not require the use of high temperatures because the carbon radicals come from the graphite filaments and not the gas.
- the high temperature of the process is limited to the carbon source.
- the temperature of the substrate is less than or equal to 800 ° C, and preferably less than or equal to 700 ° C.
- the method enables graphene to be deposited on substrates that can not be used with conventional CVD processes: substrates with thin metal layers, substrates that deteriorate at high temperatures.
- the gas introduced into the reaction chamber 3 via the gas inlet 4, to form the gas flow, is hydrocarbon-free.
- the gas is devoid of organic carbon molecules.
- carbon organic molecule is meant an organic molecule having a carbon chain comprising at least one carbon atom.
- Alcohols and hydrocarbons are, for example, organic carbon molecules.
- the gas contains less than a few parts per million (ppm) of hydrocarbons and / or carbon species.
- the gas used is dihydrogen H 2 .
- East of dihydrogen is meant that the gas comprises at least 90% by volume of dihydrogen, and preferably at least 98% of dihydrogen.
- a mixture of H 2 + H 2 O with a low water concentration could be used.
- the presence of dihydrogen may allow, in the graphene growth process, to partially etch the carbonaceous deposit and / or to help remove any impurities present on the surface of the substrate.
- the increase in temperature would create hydrogen radicals favoring the formation and / or growth of the graphene film.
- the hydrogen pressure in the reaction chamber 3 is between 10 Torr and 10 Torr, and preferably between 6 Torr and 8 Torr.
- a rise in pressure, up to ambient pressure, for example, would speed up the growth process but would also lead to the formation of several graphene monolayers that can be superimposed on each other.
- the substrate is heated to a maximum temperature of 800 ° C, and preferably at a maximum temperature of 700 ° C.
- the maximum temperature is maintained for a period ranging from 5 minutes to 5 hours.
- the duration of the temperature step is between 5 minutes and 180 minutes, and even more preferably between 60 minutes and 120 minutes.
- the duration of the bearing makes it possible to control the size of the graphene grains composing the continuous film of graphene which can vary from 1 -2 nm to several tens of micrometers. Whatever the duration of the plateau, it has been observed that the graphene film is always continuous, uniform without defects.
- the substrate is heated solely by the carbon source: the substrate 1 is heated solely by virtue of the heat radiated by the filaments.
- the carbon source 2 forms a first source of heat for the substrate 1.
- the filaments When the filaments are heated, they radiate a lot of heat and help to increase the surface temperature of the substrate.
- the filaments can be heated at temperatures up to 1700-1800 ° C: the temperature of the surface of the substrate 1, where the formation of graphene takes place, can rise to temperatures up to 700 ° C.
- surface of the substrate is meant a thickness of several tens of nanometers from the free face of the substrate, exposed to the carbon source, towards the interior of the substrate, perpendicular to the free face of the substrate.
- the temperature of the substrate 1, at the surface and at depth is lower than the temperature of the carbon source 2 during the heating step.
- the temperature of the substrate is, for example, less than 400 ° C., or even lower than 800 ° C., at the temperature of the carbon source 2.
- the substrate does not need to be heated to very high temperature, which makes it possible to use a wide range of equipment for heating the device.
- the reaction chamber is less polluted and many materials can be used as a substrate.
- the substrate 1 is heated both by the filaments and both via a second heat source 6.
- the second heat source 6 is disposed under the substrate, at the same time. opposite of the carbon source 2, which is disposed above the substrate 1.
- the second heat source 6 may be, for example, by a radio frequency power supply (RF) connected to the support 5 of the substrate 1.
- RF radio frequency power supply
- the support 5 of the substrate 1 is also called a sample holder.
- the second heat source 6 may be a heating plate or the reaction chamber may be arranged in an oven. Those skilled in the art will be able to choose any second heat source 6 adapted to the process.
- the heat radiated by the filaments can be increased by increasing the power used to heat the filaments.
- the power of the power unit can be increased up to 1000W, which reduces the temperature at which the substrate 1 is heated by the second heat source 6 to a value below 450 ° C.
- the diameter of the filaments can also be increased to intensify the heat emitted by irradiation.
- the filaments have a diameter ranging from 0.2 mm to 0.8 mm, and preferably a diameter of 0.5 mm ⁇ 1 mm.
- a vacuuming step is performed.
- the evacuation step is, for example, carried out at 5 ⁇ 10 -6 Torr.
- Degassing occurs at the carbon source when the filaments are energized.
- Substrate 1 can be contaminated by stray carbon particles leading to the formation of an amorphous carbon film. A decrease in the surface of the carbon source makes it possible to limit this phenomenon.
- the carbon source 2 is disposed above the surface of the substrate 1, at a distance of between 0.5 cm and 2.5 cm, and preferably between 0.8 cm and 1.2 cm. Preferably, the carbon source is at a distance greater than or equal to the distance between the filaments to have a uniform heating.
- the distance between the filaments and the surface of the substrate 1 can also be configured to play on the life of the radical species.
- the substrate may be cooled to stabilize the temperature or to make a graphene film with small grains.
- a metal gate 7 is disposed between the substrate 1 and the carbon source 2.
- the gate 7 makes it possible to reduce the number of parasitic particles reaching the sample during degassing.
- the parasitic carbon species, arriving at the level of the grid 7, will be absorbed by the metal of the grid.
- the metal grid 7 is, for example, nickel.
- the dissolution of carbon in nickel is relatively high: a nickel grid forms an effective trap for carbonaceous particles.
- the metal grid 7 also makes it possible to control the rate of formation of the graphene film. By playing on the dimensions of the openings of the grid 7, it It is possible to increase or decrease the amount of carbon radicals arriving at the substrate 1.
- the grid 7 could be formed of an optically transparent material, such as for example quartz.
- a shutter 8 is disposed between the substrate 1 and the carbon source 2.
- the shutter 8 is produced from an optically transparent material. It is for example, made of quartz.
- the shutter 8 is closed during the rise in temperature. Even if the shutter 8 is closed, the heat emitted by the filaments is transmitted to the surface of the substrate 1 by irradiation through the shutter transparent to the wavelength of the irradiation.
- the shutter 8 makes it possible to heat the sample, while avoiding the deposit of parasitic carbon on the sample during the pumping and the rise in temperature.
- the shutter 8 is open when the maximum temperature is reached and during the temperature plateau.
- the shutter 8 is disposed between the substrate 1 and the carbon source 2 and is closed during the rise in temperature and during the temperature step. It is kept closed when the maximum temperature is reached.
- the shutter 8 is held in the same position throughout the process.
- the shutter 8 may be a full screen.
- the formation speed of the graphene film is thus reduced and the film is more homogeneous.
- the use of a gate 7 and / or a shutter 8 have a filtering role and allow precise control of the amount of carbon species arriving on the substrate 1, thus improving the quality of the graphene film.
- the substrate 1 is formed of a solid material covered with a thin metal layer.
- the metal is a transition metal, such as Cu, Pt, Fe, Ni, Au, Ir, Ru, etc.
- the transition metals have a catalytic effect during the formation of graphene.
- the thin metal layer has a thickness between 100 nm and 400 nm, and preferably between 100 nm and 300 nm.
- the thin layer is a transition metal selected from platinum, copper, titanium or nickel. It may also be an alloy of these metals, such as, for example, a platinum alloy containing from 0.5% to 10% iridium. Even more preferentially:
- the solid material is made of silicon
- the thin metallic layer is platinum
- a chromium layer having a thickness of 20 nm ⁇ 5 nm, is disposed between the silicon and the thin metal layer.
- the solid silicon material may be formed of a silicon film coated with a thin layer of SiO 2 silicon oxide.
- Platinum has several advantages for uniform graphene film growth. Platinum has a very high melting temperature (1768 ° C) and a relatively low coefficient of thermal expansion (less than 9 ym / mK). During the process of forming the graphene film, and in particular during heat treatment, the platinum thin film will be less subject to mechanical stress than another metal layer. Graphene film will have fewer defects.
- the platinum is very difficult, or not at all oxidized, even during climbs / descents in temperature.
- the roughness of the surface of the platinum thin layer remains low.
- platinum also makes it possible, subsequently, to easily transfer the graphene film to another medium, for example by electrochemistry.
- the substrate can be used for another deposit.
- the presence of the chromium layer allows better adhesion between platinum and silicon.
- the process is not limited to thin substrates, and especially wafers.
- the substrate could be a solid substrate, for example a platinum strip.
- the device configured to produce a graphene film on a substrate 1 comprises:
- reaction chamber 3 provided with a carbon source 2 and a support 5, said support 5 being intended to maintain a substrate 1,
- a gas inlet 4 configured to form a flow of gas directed from the gas inlet 4 to the carbon source 2,
- the carbon source is a source of solid carbon.
- the gas flowing into the reaction chamber is hydrocarbon-free.
- the gas arriving in the reaction chamber is devoid of organic carbon molecules.
- the carbon source 2 is preferably formed of at least one filament.
- the carbon source 2 comprises several filaments parallel to the surface of the substrate.
- the gas flow is perpendicular to the surface of the substrate 1 and the plane formed by the carbon filaments.
- the carbon source 2 is graphite.
- the carbon source is disposed in the reaction chamber so as to be above the surface of the substrate, at a distance of between 0.5 cm and 1.5 cm, and preferably between 0.8 cm and 1.2 cm.
- the carbon source 2 Since a tiny portion of the carbon source 2 is used for each graphene deposit, the carbon source 2 has a relatively long life.
- Figure 4 shows schematically and in section the device configured to develop a graphene film.
- the various elements of the device are not to scale.
- the device makes it possible to grow graphene by CVD at low temperature.
- the reaction chamber 3 is a quartz bell.
- the lower part of the reaction chamber 3 comprises the sample holder 5.
- the reaction chamber 3 can be arranged in a closed chamber 9.
- the walls between the inside of the enclosure and the outside of the enclosure 9 are double walls 10 in which a cooling liquid circulates.
- the chamber 9 is provided with a gas inlet 1 1 and a gas outlet 12.
- the device comprises a pumping system for putting the reaction chamber under vacuum.
- the pumping system is arranged, for example, at the gas inlet 1 1 of the chamber 9.
- the reaction chamber 3 can be heated by means of heating coils 13.
- the coils are arranged against the outer walls of the reaction chamber 3.
- Thermal screens 14 may also be arranged outside the reaction chamber 3, between the heating coils 13 and the inside of the chamber 1 1, to thermally isolate the reaction chamber 3 of the chamber 1 1 .
- Thermal screens 10 are thermal insulators.
- the sample holder 5 may also be heated by heating coils 13 '.
- the filaments are graphite. They have a length of 1 10mm long and a diameter of 0.5mm.
- the filaments are 1 cm from the substrate 1. They are parallel to the surface of the substrate 1. The space between each filament is 1 cm.
- the filaments cover the substrate on a surface of 10cmx10cm.
- the sample holder 5 is made of silicon.
- the substrate 1 is formed of a stack comprising successively:
- the thin layer of SiO 2 has a thickness of 500 nm
- the platinum thin film was deposited by electron beam evaporation on the silicon wafer.
- the platinum thin film thus produced is polycrystalline.
- the reaction chamber 3 is, initially, cleaned with an oxygen plasma so as to remove any carbon parasitic element.
- the filaments are then placed in the reaction chamber.
- the filaments are heated by a power supply delivering a power of 800W, under a stream of hydrogen, which allows them to be cleaned and degassed.
- the substrate 1 is placed in the reaction chamber 3, on the sample holder 5.
- the sample holder 5 is heated to 700 ° C.
- the rise in temperature from room temperature to 700 ° C lasts 10 minutes.
- the hydrogen pressure is 7 Torr for a flow of 100cm 3 / min (or 100 sccm for standard cubic centimeter per minute).
- the temperature plateau is maintained for a period ranging from 5 minutes to 60 minutes, this stage allows the synthesis of graphene.
- reaction chamber 3 is cooled to room temperature.
- the pressure of hydrogen can be identical during the rise in temperature and during the temperature step.
- a first pressure can be used during the rise in temperature and a second pressure can be used during the temperature step.
- the film is uniform with very few defects.
- the process, described above, is carried out at a sufficiently high temperature to activate the hydrogen, but low enough to avoid both dewetting phenomena.
- a small amount of carbon radicals is generated, promoting the formation of a homogeneous and continuous graphene film.
- the thermal gradient allows activation of the carbon while ensuring a good physicochemical behavior of the graphene layer.
- the method makes it possible to form a graphene film formed of a carbon monolayer at low temperature on thin metal films.
- the size of graphite crystallites is continuously monitored. Continuous graphene films without holes are obtained irrespective of the size of the crystallites.
- Graphene films are particularly interesting for many applications, and particularly for microelectronics, spin electronics, or for applications requiring transparent conductive films.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1400560A FR3018282A1 (en) | 2014-03-07 | 2014-03-07 | METHOD FOR PRODUCING A GRAPHENE FILM |
PCT/FR2015/050551 WO2015132537A1 (en) | 2014-03-07 | 2015-03-06 | Process for producing a graphene film |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3129518A1 true EP3129518A1 (en) | 2017-02-15 |
Family
ID=51260905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP15714579.8A Withdrawn EP3129518A1 (en) | 2014-03-07 | 2015-03-06 | Process for producing a graphene film |
Country Status (5)
Country | Link |
---|---|
US (1) | US10337102B2 (en) |
EP (1) | EP3129518A1 (en) |
KR (1) | KR20160130485A (en) |
FR (1) | FR3018282A1 (en) |
WO (1) | WO2015132537A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101938874B1 (en) * | 2016-07-20 | 2019-01-15 | 주식회사 참트론 | The heat-treatment device for synthesis of high quality graphene |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102400109A (en) * | 2011-11-11 | 2012-04-04 | 南京航空航天大学 | Method for growing large area of layer-number-controllable graphene at low temperature through chemical vapor deposition (CVD) method by using polystyrene solid state carbon source |
WO2014137985A1 (en) * | 2013-03-05 | 2014-09-12 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
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JP2003206196A (en) | 2002-01-09 | 2003-07-22 | Mitsubishi Pencil Co Ltd | Hot-filament cvd apparatus |
US20030230238A1 (en) * | 2002-06-03 | 2003-12-18 | Fotios Papadimitrakopoulos | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
CN101913598B (en) * | 2010-08-06 | 2012-11-21 | 浙江大学 | Method for preparing graphene membrane |
US20140120270A1 (en) * | 2011-04-25 | 2014-05-01 | James M. Tour | Direct growth of graphene films on non-catalyst surfaces |
JP5862080B2 (en) * | 2011-07-06 | 2016-02-16 | ソニー株式会社 | Graphene production method and graphene production apparatus |
CN102505114A (en) * | 2012-01-03 | 2012-06-20 | 西安电子科技大学 | Preparation method of graphene on SiC substrate based on Ni film-aided annealing |
US20130337195A1 (en) * | 2012-06-18 | 2013-12-19 | The Trustees Of Columbia University In The City Of New York | Method of growing graphene nanocrystalline layers |
US20140170317A1 (en) * | 2012-12-17 | 2014-06-19 | Bluestone Global Tech Limited | Chemical vapor deposition of graphene using a solid carbon source |
US9593019B2 (en) * | 2013-03-15 | 2017-03-14 | Guardian Industries Corp. | Methods for low-temperature graphene precipitation onto glass, and associated articles/devices |
US20140352618A1 (en) * | 2013-06-04 | 2014-12-04 | Xuesong Li | System for forming graphene on substrate |
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2014
- 2014-03-07 FR FR1400560A patent/FR3018282A1/en active Pending
-
2015
- 2015-03-06 US US15/124,158 patent/US10337102B2/en not_active Expired - Fee Related
- 2015-03-06 WO PCT/FR2015/050551 patent/WO2015132537A1/en active Application Filing
- 2015-03-06 KR KR1020167027843A patent/KR20160130485A/en not_active Application Discontinuation
- 2015-03-06 EP EP15714579.8A patent/EP3129518A1/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102400109A (en) * | 2011-11-11 | 2012-04-04 | 南京航空航天大学 | Method for growing large area of layer-number-controllable graphene at low temperature through chemical vapor deposition (CVD) method by using polystyrene solid state carbon source |
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Also Published As
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US10337102B2 (en) | 2019-07-02 |
KR20160130485A (en) | 2016-11-11 |
FR3018282A1 (en) | 2015-09-11 |
US20170016111A1 (en) | 2017-01-19 |
WO2015132537A1 (en) | 2015-09-11 |
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