EP3070798A1 - Device for surge protection - Google Patents

Device for surge protection Download PDF

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Publication number
EP3070798A1
EP3070798A1 EP15193591.3A EP15193591A EP3070798A1 EP 3070798 A1 EP3070798 A1 EP 3070798A1 EP 15193591 A EP15193591 A EP 15193591A EP 3070798 A1 EP3070798 A1 EP 3070798A1
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EP
European Patent Office
Prior art keywords
switch
diode
resistor
voltage
protection
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Granted
Application number
EP15193591.3A
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German (de)
French (fr)
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EP3070798B1 (en
Inventor
Jérôme HEURTIER
Guillaume Bougrine
Mathieu Rouviere
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STMicroelectronics Tours SAS
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STMicroelectronics Tours SAS
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/043—Protection of over-voltage protection device by short-circuiting

Definitions

  • the present application relates to a device for protection against overvoltages, and more particularly to an overvoltage protection device adapted to the protection of a power supply line.
  • An overvoltage protection component is a component that turns on when the voltage at its terminals exceeds a certain threshold, called the breakdown voltage commonly referred to by the abbreviation V BR .
  • a first type of protection component is of the avalanche diode type whose current-voltage characteristic is illustrated in FIG. figure 1 .
  • V BR breakdown voltage
  • the component becomes conducting.
  • the voltage across the component remains equal to V BR while the current increases.
  • the characteristic is not vertical and the voltage across the component exceeds the value V BR while the overvoltage is absorbed, that is to say a current I of high value passes through the component.
  • a disadvantage of this type of component is that during the absorption phase of the overvoltage, the voltage across the terminals of the component remains greater than or equal to the breakdown voltage V BR , that is to say during this phase, the component must absorb a power greater than V BR xI. This leads to having to make a sufficiently large component on the one hand to minimize its internal resistance and thus the voltage at its terminals during the phase of evacuation of the surge, and secondly so that it can absorb the power related to the surge without being destroyed.
  • V BR greater than 100 volts, for example of the order of 300 volts, this leads to component sizes greater than several cm 2 , for example of the order of 10 cm 2 .
  • Such components are sometimes made in the form of a stack of diode chips, for example a stack of fourteen elementary chips each having a surface of 8.6 ⁇ 8.6 mm 2 to reach a breakdown voltage of 430 V. such components are therefore expensive and bulky.
  • a second type of protection component is of the type of reversal type Shockley diode or thyristor without trigger.
  • the current-voltage characteristic of a flipping component is illustrated in figure 2 . When the voltage at the terminals of the component exceeds the breakdown voltage V BR , this voltage drops rapidly and then moves along a substantially vertical characteristic 1.
  • An advantage of this second type of component is that the power dissipated by the overvoltage in the component is small compared with the power dissipated in an avalanche diode device since the voltage across the component is very low during the flow of the component. overcurrent.
  • a disadvantage of this second type of component is that, as long as there is a significant voltage across the component, it remains on, the protection component is only locked if the voltage at its terminals is such that the current in this component becomes less than a holding current I h . For a protection component whose breakdown voltage V BR is of the order of 50 to 1000 volts, this holding current is commonly a value of the order of 100 mA at 1 A according to the breakdown voltage of the component.
  • the rollover type protection components are reserved for circuits in which these components are intended to protect a line whose operating potential passes through zero values - this is particularly the case of a transmission line. of data.
  • the Figure 4B represents a portion of the characteristic curve of the diode corresponding to this particular case.
  • the potential V D corresponding to the short-circuit current I SC is significantly greater than the potential V h corresponding to the holding current I h of the reversing component.
  • the voltage V h may be of the order of 2 V. It is therefore not possible in principle to use a flipping component to protect a continuous feeding line. It is therefore necessary, as previously indicated, to use avalanche diode type protection devices which must have large surfaces and therefore a high cost.
  • the switch SW is open.
  • the terminals A and B are connected to the terminals of a continuous supply line, so that the entire protection device is connected for example as the diode D of the figure 3 .
  • the protection device is off.
  • the protection diode becomes busy and we end up in the configuration of the Figure 4A that is, the power supply connected between the terminals AB is short-circuited.
  • the switch SW is closed so that the current between the terminals A and B is derived by the switch SW.
  • the on-state resistance R on of the switch SW is sufficiently low, and in particular if the condition R on ⁇ 1 sc ⁇ V h is respected, the voltage between the terminals A and B becomes lower than the voltage V h , and the reversal diode D is blocked. The switch SW can then be opened again.
  • the control circuit comprises a surge detector and automatically closes the switch SW for a determined duration, a certain time after the overvoltage has been detected, then opens the SW switch after a specified time.
  • the control circuit comprises means for detecting the voltage across the diode D. As long as this voltage is less than V BR and greater than V D , the control circuit will remain inactive. Then, after a first voltage drop, the control circuit will determine if the voltage across the diode D is within a certain range, corresponding to the value V DC (R D / (Ri + R D )). The control circuit then determines the closing and then the opening of the switch SW.
  • the protection device furthermore comprises, in series with the reversal diode D between the terminals A and B, an avalanche diode d of breakdown voltage V br which is significantly lower than the breakdown voltage V BR of the diode D
  • V br breakdown voltage
  • an embodiment provides an overvoltage protection device adapted for protection of a power supply line, comprising: a first branch comprising a reversal diode in series with an avalanche diode; a switch controlled in parallel with the first branch; and a switch control circuit connected across the avalanche diode.
  • the breakdown voltage of the avalanche diode is at least ten times lower than the breakdown voltage of the reversal diode.
  • the breakdown voltage of the reversal diode is between 20 and 1500 V.
  • the switch is an MOS transistor or an insulated gate bipolar transistor.
  • control circuit comprises a first resistor connected in parallel with the avalanche diode, the end of the first resistor connected to the midpoint of the first branch being furthermore connected to a control node of the switch.
  • the end of the first resistor connected to the midpoint of the first branch is connected to the control node of the switch.
  • the end of the first resistor connected to the midpoint of the first branch is connected to the control node of the switch via a second resistor.
  • control node of the switch is further connected to the other end of the first resistor via a capacitor.
  • a diode is connected in parallel with the second resistor.
  • connection is used to denote a direct electrical connection, without intermediate electronic component, for example by means of one or more conductive tracks, and the term “coupled” or the term “connected” ", to designate either a direct electrical connection (meaning” connected ”) or a connection via one or more intermediate components (resistor, capacitor, etc.).
  • the control circuit (CONTROL) of the switch SW is connected firstly to the terminals A and B of the branch comprising the reversal diode D, and secondly to a terminal or a control node of the switch SW.
  • the control circuit controls the switch SW as a function of the voltage between the nodes A and B.
  • the control circuit may comprise a processor or another programmer or logic circuit.
  • the control circuit must have a high voltage interface to support the supply voltage of the line.
  • the control circuit must include an energy storage capacitor for supplying the logic circuits with a DC supply voltage of a level below the supply voltage of the line.
  • the supply voltage of the line can be particularly high, typically of the order of several hundred volts.
  • the control circuitry (CONTROL) of the switch SW is relatively expensive and bulky.
  • the avalanche diode has a breakdown voltage V br less than the breakdown voltage V BR of the reversal diode D.
  • the breakdown voltage V br of the avalanche diode d is significantly lower, for example at least ten times lower than the breakdown voltage V BR of the reversal diode.
  • the reversal diode D has its anode connected to the terminal A and its cathode connected to a node or a terminal C of the first branch.
  • the avalanche diode da its cathode connected to the node C and its anode connected to the terminal B.
  • the reversal diode D has a breakdown voltage of between 20 and 1500 V.
  • the SW switch is for example a MOS transistor or an IGBT (English “Insulated Gate Bipolar Transistor” - insulated gate bipolar transistor).
  • the switch SW is a PNP type IGBT whose collector is connected to the terminal A and whose emitter is connected to the terminal B.
  • the protective device of the figure 7 differs from the device of the figure 6 in that the control circuit (CONTROL) of the device of the figure 6 , connected between the terminals A and B in the example of the figure 6 , is replaced by a circuit 70 connected on the one hand across the avalanche diode d (that is to say to the nodes C and B in this example), and on the other hand to a terminal or a node SW switch control. So, in the embodiment of the figure 7 the control circuit 70 of the switch SW is not connected to the connection terminals A and B of the protection device at the supply line.
  • the operation of the protective device of the figure 7 is similar to that of the device of the figure 6 except that instead of controlling the switch SW as a function of the voltage between the terminals A and B, the control circuit 70 controls the switch SW as a function of the voltage across the avalanche diode d.
  • control circuit can be considerably simplified with respect to the control circuit of the devices of the Figures 5 and 6 .
  • the figure 8 represents an exemplary embodiment of the control circuit 70 of the protection device of the figure 7 .
  • the circuit 70 is reduced to a simple resistor R1 connected between the nodes C and B, in parallel with the avalanche diode d.
  • the end of the resistor R1 connected to the node C of the association is further connected to the control gate of the switch SW.
  • the voltage across the avalanche diode d is directly used to control the switch SW.
  • the resistor R1 is preferably substantially greater than the on-state resistance of the avalanche diode d.
  • the value of the resistor R1 is between 1 and 100 k ⁇ .
  • the protection device is off.
  • the resistor R1 makes it possible to reduce the potential of the node C substantially to the potential of the node B (for example connected to the ground), so that the switch SW is blocked.
  • the reversing diode D and the avalanche diode d become conductive and the power supply connected between the terminals A and B is short-circuited.
  • the voltage across the avalanche diode to pass then a zero value to a value substantially equal to V br, which causes the closing of switch SW.
  • the switch SW turns on at the same time or almost simultaneously with the diodes D and d.
  • the current related to the overvoltage is shared between the switch SW and the branch having the diodes D and d.
  • the switch SW absorbs what it can absorb current until saturation, the remainder (in practice the greater part of the current) being absorbed by the diodes D and d.
  • the switch SW is sized to be able to absorb all or most of this current, so that the reversal diode D is blocked.
  • the potential of the node C is then brought back substantially to the potential of the node B via the resistor R1, and the switch SW is blocked.
  • the switch SW may hang slightly after the reversal diode D because of the parasitic capacitance between its control gate and the terminal B, which forms a parallel circuit RC with the resistor R1.
  • the figure 9 represents another embodiment of the control circuit 70 of the protection device of the figure 7 .
  • the circuit 70 comprises the same resistor R1 as in the example of the figure 8 and further comprises an RC circuit having a resistor R2 connecting the end of the resistor R1 connected to the node C to the control gate of the switch SW, and a capacitor C1 connecting the control gate of the switch SW to the terminal B.
  • the operation of the device of the figure 9 is similar to that of the device of the figure 8 but differs from the operation described in relation to the figure 8 in that, when an overvoltage occurs, the switch is closed with a delay time with respect to the tripping of the diodes D and d, this delay time being fixed by the circuit RC formed by the resistor R2 and the capacitor C1.
  • the switch SW is blocked with a delay time set by the RC circuit.
  • circuit of the figure 9 allows a desired delay to be set between triggering diodes D and d and closing switch SW, and between blocking diodes D and d and opening switch SW.
  • the values of the capacitor C1 and the resistor R2 are chosen so as to obtain a time constant, and therefore a delay time between the initiation of the protection and the closing of the switch SW, comprised between and 100 ⁇ s, for example about 20 ms.
  • the capacity of the capacitor C1 is for example between 20 nF and 2 ⁇ F, and the resistance R2 has for example a value between 10 ⁇ and 1 k ⁇ .
  • the capacitor C1 may be omitted, the delay time between the tripping of the protection and the closing of the switch SW then being fixed by the circuit RC formed by the resistor R2 and the intrinsic capacitance of the switch SW between its node control and terminal B (for example the gate-source capacitance in the case of a MOS transistor, or the gate-emitter capacitance in the case of an IGBT).
  • the figure 10 represents another embodiment of the control circuit 70 of the protection device of the figure 7 .
  • the circuit 70 includes the same elements as in the example of the figure 9 , and further comprises, in parallel with the resistor R2, a diode D1 whose anode is connected to the node C and whose cathode is connected to the control gate of the switch SW.
  • the operation of the device of the figure 10 is similar to that of the device of the figure 9 except that, because of the presence of the diode D1, the switch turns on substantially at the same time as the diodes D and d when an overvoltage occurs.
  • the RC circuit has the effect of delaying the reopening of the switch SW at the end of overvoltage, but does not delay its closure at the beginning of overvoltage.
  • Protective devices of the type described in relation to the Figures 7 to 10 present the advantages of Figures 5 and 6 .
  • they make it possible to use a reversal diode with a relatively small surface area, for example 50 mm 2
  • diodes avalanche protection should have areas of the order from 1 to 10 cm 2 .
  • the entire switching device SW for example a MOS or IGBT transistor, and the control circuit will for example have a surface of the order of only 10 to 15 mm 2 .
  • the total surface of the protection device is less than 65 mm 2 , and the function provided by an avalanche protection component of a surface of 1 to 10 cm 2 can be fulfilled.
  • control circuit 70 is not limited to the exemplary embodiments of the control circuit 70 described in connection with the Figures 8, 9 and 10 .
  • Those skilled in the art will be able to adapt the examples described according to the intended application, in particular with a view to achieving compromises in terms of sizing of the switch SW, the reversal diode D, and the avalanche diode d.
  • circuits 70 consisting solely of passive components have been described, active components such as transistors can be added to the control circuit of the switch SW, in particular to more precisely control the closing and switching times. opening of the SW switch.
  • the protection component only in connection with a polarized line at a DC voltage has been described.
  • This component can also be used in the case where the line is an AC power line, for example at 50 or 60 Hz. Indeed, if the surge occurs at the beginning of an alternation, it may be desirable for the protection diode ceases to conduct quickly after the occurrence of an overvoltage without waiting for the end of an alternation, the duration of an alternation being 10 ms in the case of a power supply at 50 Hz.

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  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)

Abstract

L'invention concerne un dispositif de protection contre des surtensions adapté à la protection d'une ligne d'alimentation, comprenant : une première branche comprenant une diode à retournement (D) en série avec une diode à avalanche (d) ; un commutateur commandé (SW) en parallèle de la première branche ; et un circuit (70) de commande du commutateur (SW) connecté aux bornes de la diode à avalanche (d).The invention relates to an overvoltage protection device adapted to the protection of a power supply line, comprising: a first branch comprising a reversal diode (D) in series with an avalanche diode (d); a controlled switch (SW) in parallel with the first branch; and a switch control circuit (70) (SW) connected across the avalanche diode (d).

Description

DomaineField

La présente demande concerne un dispositif de protection contre des surtensions, et vise plus particulièrement un dispositif de protection contre des surtensions adapté à la protection d'une ligne d'alimentation.The present application relates to a device for protection against overvoltages, and more particularly to an overvoltage protection device adapted to the protection of a power supply line.

Exposé de l'art antérieurPresentation of the prior art

Un composant de protection contre des surtensions est un composant qui devient passant quand la tension à ses bornes dépasse un certain seuil, appelé tension de claquage couramment désignée par l'abréviation VBR.An overvoltage protection component is a component that turns on when the voltage at its terminals exceeds a certain threshold, called the breakdown voltage commonly referred to by the abbreviation V BR .

Un premier type de composant de protection est du type diode à avalanche dont la caractéristique courant-tension est illustrée en figure 1. Quand la tension aux bornes de ce composant dépasse la tension de claquage VBR, le composant devient passant. Idéalement, la tension aux bornes du composant reste égale à VBR tandis que le courant augmente. En fait, comme cela est représenté en figure 1, la caractéristique n'est pas verticale et la tension aux bornes du composant dépasse la valeur VBR tandis que la surtension est absorbée, c'est-à-dire qu'un courant I de forte valeur traverse le composant.A first type of protection component is of the avalanche diode type whose current-voltage characteristic is illustrated in FIG. figure 1 . When the voltage across this component exceeds the breakdown voltage V BR , the component becomes conducting. Ideally, the voltage across the component remains equal to V BR while the current increases. In fact, as shown in figure 1 , the characteristic is not vertical and the voltage across the component exceeds the value V BR while the overvoltage is absorbed, that is to say a current I of high value passes through the component.

Un inconvénient de ce type de composant est que pendant la phase d'absorption de la surtension, la tension aux bornes du composant demeure supérieure ou égale à la tension de claquage VBR, c'est-à-dire que, pendant cette phase, le composant doit absorber une puissance supérieure à VBRxI. Ceci conduit à devoir réaliser un composant de dimension suffisamment importante d'une part pour minimiser sa résistance interne et ainsi la tension à ses bornes pendant la phase d'évacuation de la surtension, et d'autre part pour qu'il puisse absorber la puissance liée à la surtension sans être détruit. Couramment, pour des tensions VBR supérieures à 100 volts, par exemple de l'ordre de 300 volts, ceci conduit à des dimensions de composants supérieures à plusieurs cm2, par exemple de l'ordre de 10 cm2. De tels composants sont parfois réalisés sous forme d'un empilement de puces de diodes, par exemple un empilement de quatorze puces élémentaires ayant chacune une surface de 8,6 x 8,6 mm2 pour atteindre une tension de claquage de 430 V. De tels composants sont donc coûteux et encombrants.A disadvantage of this type of component is that during the absorption phase of the overvoltage, the voltage across the terminals of the component remains greater than or equal to the breakdown voltage V BR , that is to say during this phase, the component must absorb a power greater than V BR xI. This leads to having to make a sufficiently large component on the one hand to minimize its internal resistance and thus the voltage at its terminals during the phase of evacuation of the surge, and secondly so that it can absorb the power related to the surge without being destroyed. Currently, for voltages V BR greater than 100 volts, for example of the order of 300 volts, this leads to component sizes greater than several cm 2 , for example of the order of 10 cm 2 . Such components are sometimes made in the form of a stack of diode chips, for example a stack of fourteen elementary chips each having a surface of 8.6 × 8.6 mm 2 to reach a breakdown voltage of 430 V. such components are therefore expensive and bulky.

Un second type de composant de protection est du type à retournement, de type diode de Shockley ou thyristor sans gâchette. La caractéristique courant-tension d'un composant à retournement est illustrée en figure 2. Quand la tension aux bornes du composant dépasse la tension de claquage VBR, cette tension chute rapidement puis se déplace le long d'une caractéristique 1 sensiblement verticale.A second type of protection component is of the type of reversal type Shockley diode or thyristor without trigger. The current-voltage characteristic of a flipping component is illustrated in figure 2 . When the voltage at the terminals of the component exceeds the breakdown voltage V BR , this voltage drops rapidly and then moves along a substantially vertical characteristic 1.

Un avantage de ce second type de composant est que la puissance dissipée par la surtension dans le composant est faible devant la puissance dissipée dans un dispositif du type diode à avalanche étant donné que la tension aux bornes du composant est très faible pendant l'écoulement de la surintensité. Un inconvénient de ce second type de composant est que, tant qu'il existe une tension significative aux bornes du composant, celui-ci reste passant, le composant de protection ne se rebloquant que si la tension à ses bornes est telle que le courant dans ce composant devient inférieur à un courant de maintien Ih. Pour un composant de protection dont la tension de claquage VBR est de l'ordre de 50 à 1000 volts, ce courant de maintien a couramment une valeur de l'ordre de 100 mA à 1 A selon la tension de claquage du composant.An advantage of this second type of component is that the power dissipated by the overvoltage in the component is small compared with the power dissipated in an avalanche diode device since the voltage across the component is very low during the flow of the component. overcurrent. A disadvantage of this second type of component is that, as long as there is a significant voltage across the component, it remains on, the protection component is only locked if the voltage at its terminals is such that the current in this component becomes less than a holding current I h . For a protection component whose breakdown voltage V BR is of the order of 50 to 1000 volts, this holding current is commonly a value of the order of 100 mA at 1 A according to the breakdown voltage of the component.

En conséquence, les composants de protection de type à retournement sont réservés à des circuits dans lesquels ces composants sont destinés à protéger une ligne dont le potentiel de fonctionnement passe par des valeurs nulles - c'est en particulier le cas d'une ligne de transmission de données.As a result, the rollover type protection components are reserved for circuits in which these components are intended to protect a line whose operating potential passes through zero values - this is particularly the case of a transmission line. of data.

Comme l'illustre la figure 3, si on veut protéger une ligne L1 constituant une ligne d'alimentation connectée à la sortie d'un dispositif d'alimentation tel qu'une centrale solaire 10, reliée par exemple à un onduleur 12, on ne pourra normalement pas utiliser un composant de protection à retournement car, après l'apparition d'une surtension, correspondant par exemple à un coup de foudre sur la ligne L1, le potentiel sur cette ligne L1 reste positif et le composant de protection reste passant.As illustrated by figure 3 if it is desired to protect a line L1 constituting a supply line connected to the output of a power supply device such as a solar power plant 10, connected for example to an inverter 12, it will not normally be possible to use a component of reversal protection because, after the occurrence of an overvoltage, corresponding for example to a lightning strike on the line L1, the potential on this line L1 remains positive and the protection component remains passing.

Comme l'illustre la figure 4A, après application de la surtension, la tension VDC à la sortie de la source d'alimentation 10 est en court-circuit et il y circule un courant de court-circuit ISC. La source voit à ses bornes sa résistance interne Ri et la résistance à l'état passant RD de la diode de protection. Il existe alors aux bornes de la diode de protection un potentiel VD = VDC(RD/(Ri+RD)).As illustrated by Figure 4A after application of the overvoltage, the voltage V DC at the output of the power source 10 is short-circuited and there circulates a short-circuit current I SC . The source sees at its terminals its internal resistance Ri and the resistance to the on state R D of the protection diode. There is then at the terminals of the protective diode a potential V D = DC V (R D / (Ri + R D )).

La figure 4B représente une portion de la courbe caractéristique de la diode correspondant à ce cas particulier. Dans la plupart des configurations pratiques, le potentiel VD correspondant au courant de court-circuit ISC est nettement supérieur au potentiel Vh correspondant au courant de maintien Ih du composant à retournement. A titre d'exemple, pour un courant de maintien Ih de 150 mA, la tension Vh peut être de l'ordre de 2 V. Il n'est donc a priori pas possible d'utiliser un composant à retournement pour protéger une ligne d'alimentation continue. On se trouve donc amené, comme on l'a indiqué précédemment, à utiliser des dispositifs de protection de type diodes à avalanche qui doivent avoir des surfaces importantes et donc un coût élevé.The Figure 4B represents a portion of the characteristic curve of the diode corresponding to this particular case. In most practical configurations, the potential V D corresponding to the short-circuit current I SC is significantly greater than the potential V h corresponding to the holding current I h of the reversing component. By way of example, for a holding current I h of 150 mA, the voltage V h may be of the order of 2 V. It is therefore not possible in principle to use a flipping component to protect a continuous feeding line. It is therefore necessary, as previously indicated, to use avalanche diode type protection devices which must have large surfaces and therefore a high cost.

La figure 5 illustre un exemple d'un dispositif de protection déjà proposé par la demanderesse pour résoudre cet inconvénient. Ce dispositif est décrit dans la demande de brevet français N°1352864 (et dans la demande de brevet US correspondante N°14229018 ) dont le contenu est considéré comme faisant partie intégrante de la présente description. Ce dispositif comporte, entre deux bornes A et B, le montage en parallèle :

  • d'une diode de protection de type à retournement D,
  • d'un commutateur SW, et
  • d'un circuit de commande (CONTROL) du commutateur SW.
The figure 5 illustrates an example of a protection device already proposed by the plaintiff to solve this drawback. This device is described in the patent application French N ° 1352864 (and in the patent application Corresponding US number 14229018 ) the content of which is considered an integral part of this description. This device comprises, between two terminals A and B, the parallel assembly:
  • a reversal type protection diode D,
  • SW switch, and
  • of a control circuit (CONTROL) of the switch SW.

Le fonctionnement du dispositif de protection de la figure 5 est le suivant.The operation of the protective device of the figure 5 is the next.

Au repos, le commutateur SW est ouvert. Les bornes A et B sont connectées aux bornes d'une ligne d'alimentation continue, de sorte que l'ensemble du dispositif de protection est connecté par exemple comme la diode D de la figure 3. Tant que la tension aux bornes AB reste inférieure à la tension de claquage de la diode à retournement D, le dispositif de protection est non passant. Quand une surtension apparaît, la diode de protection devient passante et l'on se retrouve dans la configuration de la figure 4A, c'est-à-dire que l'alimentation reliée entre les bornes AB est en court-circuit. Une fois la surtension passée, on retrouve dans la diode D un courant de court-circuit ISC tel que défini en relation avec la figure 4A. A ce moment, on ferme le commutateur SW de sorte que le courant entre les bornes A et B est dérivé par le commutateur SW. Si la résistance à l'état passant Ron du commutateur SW est suffisamment faible, et en particulier si la condition RonxIsc < Vh est respectée, la tension entre les bornes A et B devient inférieure à la tension Vh, et la diode à retournement D se bloque. Le commutateur SW peut alors être à nouveau ouvert.At rest, the switch SW is open. The terminals A and B are connected to the terminals of a continuous supply line, so that the entire protection device is connected for example as the diode D of the figure 3 . As long as the voltage at the terminals AB remains lower than the breakdown voltage of the diode D, the protection device is off. When an overvoltage appears, the protection diode becomes busy and we end up in the configuration of the Figure 4A that is, the power supply connected between the terminals AB is short-circuited. Once the overvoltage has passed, we find in the diode D a short circuit current I SC as defined in relation to the Figure 4A . At this time, the switch SW is closed so that the current between the terminals A and B is derived by the switch SW. If the on-state resistance R on of the switch SW is sufficiently low, and in particular if the condition R on × 1 sc <V h is respected, the voltage between the terminals A and B becomes lower than the voltage V h , and the reversal diode D is blocked. The switch SW can then be opened again.

Selon une première possibilité, le circuit de commande comprend un détecteur de surtension et ferme automatiquement le commutateur SW pendant une durée déterminée, un certain temps après que la surtension aura été détectée, puis ouvre le commutateur SW au bout d'un temps déterminé.According to a first possibility, the control circuit comprises a surge detector and automatically closes the switch SW for a determined duration, a certain time after the overvoltage has been detected, then opens the SW switch after a specified time.

Selon une autre possibilité, le circuit de commande comprend des moyens pour détecter la tension aux bornes de la diode D. Tant que cette tension est inférieure à VBR et supérieure à VD, le circuit de commande restera inactif. Ensuite, après une première chute de tension, le circuit de commande déterminera si la tension aux bornes de la diode D se trouve dans une certaine plage, correspondant à la valeur VDC(RD/(Ri+RD)). Le circuit de commande détermine alors la fermeture puis l'ouverture du commutateur SW.According to another possibility, the control circuit comprises means for detecting the voltage across the diode D. As long as this voltage is less than V BR and greater than V D , the control circuit will remain inactive. Then, after a first voltage drop, the control circuit will determine if the voltage across the diode D is within a certain range, corresponding to the value V DC (R D / (Ri + R D )). The control circuit then determines the closing and then the opening of the switch SW.

Le fonctionnement du circuit de la figure 5 repose sur le fait que, quand le commutateur SW est à l'état passant, la tension à ses bornes chute suffisamment pour devenir inférieure à la valeur Vh définie précédemment. Ceci implique que la résistance à l'état passant Ron du commutateur SW doit être nettement inférieure à la résistance apparente RD de la diode D quand le dispositif est en court-circuit. On comprendra que cela oblige à utiliser un commutateur à très faible Ron, ce qui n'est pas toujours compatible avec le souhait que l'on a d'utiliser des commutateurs à faible coût, par exemple des transistors MOS de petites dimensions.The operation of the circuit of the figure 5 relies on the fact that, when the switch SW is in the on state, the voltage across its terminals drops sufficiently to become lower than the value V h previously defined. This implies that the on-resistance R on of the switch SW must be much smaller than the apparent resistance R D of the diode D when the device is short-circuited. It will be understood that this requires the use of a very low R on switch, which is not always compatible with the desire to use low cost switches, for example small MOS transistors.

La figure 6 illustre une variante de réalisation du dispositif de la figure 5, décrite dans les demandes de brevet français N°1352864 et US N°14229018 susmentionnées, et permettant de résoudre cet inconvénient. Dans la variante de la figure 6, le dispositif de protection comprend en outre, en série avec la diode à retournement D entre les bornes A et B, une diode à avalanche d de tension de claquage Vbr nettement inférieure à la tension de claquage VBR de la diode à retournement D. Le fonctionnement de l'ensemble en série de la diode à retournement D et de la diode à avalanche d est peu différent pour l'absorption d'une surtension du fonctionnement de la diode D seule. Cette fois-ci, quand la surtension est passée et que la ligne se trouve en court-circuit, il faut seulement que la condition RonxIsc < Vh + Vbr soit satisfaite, ce qui permet d'utiliser un commutateur dont le Ron est plus élevé que dans le cas du montage de la figure 5.The figure 6 illustrates an alternative embodiment of the device of the figure 5 described in the patent applications French N ° 1352864 and U.S. N ° 14229018 above mentioned, and making it possible to solve this drawback. In the variant of the figure 6 , the protection device furthermore comprises, in series with the reversal diode D between the terminals A and B, an avalanche diode d of breakdown voltage V br which is significantly lower than the breakdown voltage V BR of the diode D The operation of the series assembly of the reversing diode D and the avalanche diode is little different for the absorption of an overvoltage of the operation of the diode D alone. This time, when the overvoltage has passed and the line is short-circuited, it is only necessary that the condition R on xI sc <V h + V br is satisfied, making it possible to use a switch which R is is higher than in the case of mounting the figure 5 .

Il existe toutefois un besoin d'améliorer au moins en partie certains aspects des dispositifs de protection connus.There is, however, a need to improve at least some aspects of the known protective devices.

Résumésummary

Ainsi, un mode de réalisation prévoit un dispositif de protection contre des surtensions adapté à la protection d'une ligne d'alimentation, comprenant : une première branche comprenant une diode à retournement en série avec une diode à avalanche ; un commutateur commandé en parallèle de la première branche ; et un circuit de commande du commutateur connecté aux bornes de la diode à avalanche.Thus, an embodiment provides an overvoltage protection device adapted for protection of a power supply line, comprising: a first branch comprising a reversal diode in series with an avalanche diode; a switch controlled in parallel with the first branch; and a switch control circuit connected across the avalanche diode.

Selon un mode de réalisation, la tension de claquage de la diode à avalanche est au moins dix fois plus faible que la tension de claquage de la diode à retournement.According to one embodiment, the breakdown voltage of the avalanche diode is at least ten times lower than the breakdown voltage of the reversal diode.

Selon un mode de réalisation, la tension de claquage de la diode à retournement est comprise entre 20 et 1500 V.According to one embodiment, the breakdown voltage of the reversal diode is between 20 and 1500 V.

Selon un mode de réalisation, le commutateur est un transistor MOS ou un transistor bipolaire à grille isolée.According to one embodiment, the switch is an MOS transistor or an insulated gate bipolar transistor.

Selon un mode de réalisation, le circuit de commande comprend une première résistance connectée en parallèle de la diode à avalanche, l'extrémité de la première résistance connectée au point milieu de la première branche étant en outre reliée à un noeud de commande du commutateur.According to one embodiment, the control circuit comprises a first resistor connected in parallel with the avalanche diode, the end of the first resistor connected to the midpoint of the first branch being furthermore connected to a control node of the switch.

Selon un mode de réalisation, l'extrémité de la première résistance connectée au point milieu de la première branche est connectée au noeud de commande du commutateur.According to one embodiment, the end of the first resistor connected to the midpoint of the first branch is connected to the control node of the switch.

Selon un mode de réalisation, l'extrémité de la première résistance connectée au point milieu de la première branche est reliée au noeud de commande du commutateur par l'intermédiaire d'une deuxième résistance.According to one embodiment, the end of the first resistor connected to the midpoint of the first branch is connected to the control node of the switch via a second resistor.

Selon un mode de réalisation, le noeud de commande du commutateur est en outre relié à l'autre extrémité de la première résistance par l'intermédiaire d'un condensateur.According to one embodiment, the control node of the switch is further connected to the other end of the first resistor via a capacitor.

Selon un mode de réalisation, une diode est connectée en parallèle de la deuxième résistance.According to one embodiment, a diode is connected in parallel with the second resistor.

Brève description des dessinsBrief description of the drawings

Ces caractéristiques et avantages, ainsi que d'autres, seront exposés en détail dans la description suivante de modes de réalisation particuliers faite à titre non limitatif en relation avec les figures jointes parmi lesquelles :

  • la figure 1, décrite précédemment, représente la caractéristique courant-tension d'un dispositif de protection du type diode à avalanche ;
  • la figure 2, décrite précédemment, représente la caractéristique courant-tension d'un dispositif de protection de type à retournement ;
  • la figure 3, décrite précédemment, représente une diode de protection de type à retournement connectée à une ligne d'alimentation continue ;
  • la figure 4A, décrite précédemment, représente un schéma équivalent du montage de la figure 3 en court-circuit ;
  • la figure 4B, décrite précédemment, représente la caractéristique d'un dispositif à retournement dans le cas de la figure 4A ;
  • la figure 5, décrite précédemment, représente un exemple d'un dispositif de protection contre des surtensions ;
  • la figure 6, décrite précédemment, représente une variante du dispositif de protection de la figure 5 ;
  • la figure 7 représente un mode de réalisation d'un dispositif de protection contre des surtensions ;
  • la figure 8 représente un exemple de réalisation du dispositif de la figure 7 ;
  • la figure 9 représente un autre exemple de réalisation du dispositif de la figure 7 ; et
  • la figure 10 représente un autre exemple de réalisation du dispositif de la figure 7.
These and other features and advantages will be set forth in detail in the following description of particular embodiments in a non-limiting manner with reference to the accompanying drawings in which:
  • the figure 1 , described above, represents the current-voltage characteristic of an avalanche diode protection device;
  • the figure 2 , described above, represents the current-voltage characteristic of a roll-over protection device;
  • the figure 3 , described above, represents a reversal-type protection diode connected to a DC feed line;
  • the Figure 4A , previously described, represents an equivalent diagram of the assembly of the figure 3 in short circuit;
  • the Figure 4B , described above, represents the characteristic of a reversing device in the case of the Figure 4A ;
  • the figure 5 , described above, represents an example of an overvoltage protection device;
  • the figure 6 , described above, represents a variant of the protection device of the figure 5 ;
  • the figure 7 represents an embodiment of a surge protection device;
  • the figure 8 represents an embodiment of the device of the figure 7 ;
  • the figure 9 represents another embodiment of the device of the figure 7 ; and
  • the figure 10 represents another embodiment of the device of the figure 7 .

Description détailléedetailed description

De mêmes éléments ont été désignés par de mêmes références aux différentes figures. Par ailleurs, dans la présente description, on utilise le terme "connecté" pour désigner une liaison électrique directe, sans composant électronique intermédiaire, par exemple au moyen d'une ou plusieurs pistes conductrices, et le terme "couplé" ou le terme "relié", pour désigner soit une liaison électrique directe (signifiant alors "connecté") soit une liaison via un ou plusieurs composants intermédiaires (résistance, condensateur, etc.).The same elements have been designated with the same references in the various figures. Furthermore, in the present description, the term "connected" is used to denote a direct electrical connection, without intermediate electronic component, for example by means of one or more conductive tracks, and the term "coupled" or the term "connected" ", to designate either a direct electrical connection (meaning" connected ") or a connection via one or more intermediate components (resistor, capacitor, etc.).

Dans les dispositifs des figures 5 et 6, le circuit de commande (CONTROL) du commutateur SW est connecté d'une part aux bornes A et B de la branche comportant la diode de retournement D, et d'autre part à une borne ou à un noeud de commande du commutateur SW. Le circuit de commande commande le commutateur SW en fonction de la tension entre les noeuds A et B. Le circuit de commande peut comporter un processeur ou un autre programmateur ou circuit logique. Ainsi, le circuit de commande doit comporter une interface haute tension pour supporter la tension d'alimentation de la ligne. En outre, le circuit de commande doit comporter une capacité de stockage d'énergie pour fournir aux circuits logiques une tension d'alimentation continue de niveau inférieur à la tension d'alimentation de la ligne. Dans certaines applications, par exemple dans une centrale solaire, la tension d'alimentation de la ligne peut être particulièrement élevée, typiquement de l'ordre de plusieurs centaines de volts. Il en résulte que le circuit de commande (CONTROL) du commutateur SW est relativement onéreux et encombrant.In the devices of Figures 5 and 6 , the control circuit (CONTROL) of the switch SW is connected firstly to the terminals A and B of the branch comprising the reversal diode D, and secondly to a terminal or a control node of the switch SW. The control circuit controls the switch SW as a function of the voltage between the nodes A and B. The control circuit may comprise a processor or another programmer or logic circuit. Thus, the control circuit must have a high voltage interface to support the supply voltage of the line. In addition, the control circuit must include an energy storage capacitor for supplying the logic circuits with a DC supply voltage of a level below the supply voltage of the line. In some applications, for example in a solar power plant, the supply voltage of the line can be particularly high, typically of the order of several hundred volts. As a result, the control circuitry (CONTROL) of the switch SW is relatively expensive and bulky.

La figure 7 représente un exemple d'un mode de réalisation d'un dispositif de protection contre des surtensions. Ce dispositif comprend, comme dans l'exemple de la figure 6, entre deux bornes A et B, le montage en parallèle :

  • d'une première branche comportant une diode de protection de type à retournement D en série avec une diode à avalanche d ; et
  • d'un commutateur SW.
The figure 7 represents an example of an embodiment of an overvoltage protection device. This device comprises, as in the example of the figure 6 between two terminals A and B, the parallel connection:
  • a first branch having a reversal type protection diode D in series with an avalanche diode d; and
  • SW switch.

La diode à avalanche d a une tension de claquage Vbr inférieure à la tension de claquage VBR de la diode à retournement D. De préférence, la tension de claquage Vbr de la diode à avalanche d est nettement plus faible, par exemple au moins dix fois plus faible, que la tension de claquage VBR de la diode à retournement. Dans l'exemple représenté, la diode à retournement D a son anode connectée à la borne A et sa cathode connectée à un noeud ou une borne C de la première branche. La diode à avalanche d a sa cathode connectée au noeud C et son anode connectée à la borne B. A titre d'exemple, la diode à retournement D a une tension de claquage comprise entre 20 et 1500 V.The avalanche diode has a breakdown voltage V br less than the breakdown voltage V BR of the reversal diode D. Preferably, the breakdown voltage V br of the avalanche diode d is significantly lower, for example at least ten times lower than the breakdown voltage V BR of the reversal diode. In the example shown, the reversal diode D has its anode connected to the terminal A and its cathode connected to a node or a terminal C of the first branch. The avalanche diode da its cathode connected to the node C and its anode connected to the terminal B. As an example, the reversal diode D has a breakdown voltage of between 20 and 1500 V.

Le commutateur SW est par exemple un transistor MOS ou un IGBT (de l'anglais "Insulated Gate Bipolar Transistor" - transistor bipolaire à grille isolée). A titre d'exemple, le commutateur SW est un IGBT de type PNP dont le collecteur est connecté à la borne A et dont l'émetteur est connecté à la borne B.The SW switch is for example a MOS transistor or an IGBT (English "Insulated Gate Bipolar Transistor" - insulated gate bipolar transistor). By way of example, the switch SW is a PNP type IGBT whose collector is connected to the terminal A and whose emitter is connected to the terminal B.

Le dispositif de protection de la figure 7 diffère du dispositif de la figure 6 en ce que le circuit de commande (CONTROL) du dispositif de la figure 6, connecté entre les bornes A et B dans l'exemple de la figure 6, est remplacé par un circuit 70 connecté d'une part aux bornes de la diode à avalanche d (c'est-à-dire aux noeuds C et B dans cet exemple), et d'autre part à une borne ou à un noeud de commande du commutateur SW. Ainsi, dans le mode de réalisation de la figure 7, le circuit de commande 70 de l'interrupteur SW n'est pas connecté aux bornes A et B de connexion du dispositif de protection à la ligne d'alimentation.The protective device of the figure 7 differs from the device of the figure 6 in that the control circuit (CONTROL) of the device of the figure 6 , connected between the terminals A and B in the example of the figure 6 , is replaced by a circuit 70 connected on the one hand across the avalanche diode d (that is to say to the nodes C and B in this example), and on the other hand to a terminal or a node SW switch control. So, in the embodiment of the figure 7 the control circuit 70 of the switch SW is not connected to the connection terminals A and B of the protection device at the supply line.

Le fonctionnement du dispositif de protection de la figure 7 est similaire à celui du dispositif de la figure 6, à la différence près qu'au lieu de commander le commutateur SW en fonction de la tension entre les bornes A et B, le circuit de commande 70 commande le commutateur SW en fonction de la tension aux bornes de la diode à avalanche d.The operation of the protective device of the figure 7 is similar to that of the device of the figure 6 except that instead of controlling the switch SW as a function of the voltage between the terminals A and B, the control circuit 70 controls the switch SW as a function of the voltage across the avalanche diode d.

Un avantage du mode de réalisation de la figure 7 est que le circuit de commande peut être considérablement simplifié par rapport au circuit de commande des dispositifs des figures 5 et 6.An advantage of the embodiment of the figure 7 is that the control circuit can be considerably simplified with respect to the control circuit of the devices of the Figures 5 and 6 .

La figure 8 représente un exemple de réalisation du circuit de commande 70 du dispositif de protection de la figure 7. Dans l'exemple de la figure 8, le circuit 70 est réduit à une simple résistance R1 connectée entre les noeuds C et B, en parallèle de la diode à avalanche d. L'extrémité de la résistance R1 connectée au noeud C de l'association est en outre connectée à la grille de commande du commutateur SW. Ainsi, dans cet exemple, la tension aux bornes de la diode à avalanche d est directement utilisée pour commander le commutateur SW. La résistance R1 est de préférence nettement supérieure à la résistance à l'état passant de la diode à avalanche d. A titre d'exemple, la valeur de la résistance R1 est comprise entre 1 et 100 kΩ.The figure 8 represents an exemplary embodiment of the control circuit 70 of the protection device of the figure 7 . In the example of the figure 8 the circuit 70 is reduced to a simple resistor R1 connected between the nodes C and B, in parallel with the avalanche diode d. The end of the resistor R1 connected to the node C of the association is further connected to the control gate of the switch SW. Thus, in this example, the voltage across the avalanche diode d is directly used to control the switch SW. The resistor R1 is preferably substantially greater than the on-state resistance of the avalanche diode d. For example, the value of the resistor R1 is between 1 and 100 kΩ.

Le fonctionnement du dispositif de protection de la figure 8 est le suivant.The operation of the protective device of the figure 8 is the next.

Tant que la tension entre les bornes A et B reste inférieure à la tension de claquage de la diode à retournement D, le dispositif de protection est non passant. La résistance R1 permet de ramener le potentiel du noeud C sensiblement au potentiel du noeud B (par exemple connecté à la masse), de sorte que le commutateur SW est bloqué. Quand une surtension apparaît, la diode à retournement D et la diode à avalanche d deviennent passantes et l'alimentation reliée entre les bornes A et B est en court-circuit. La tension aux bornes de la diode à avalanche d passe alors d'une valeur nulle à une valeur sensiblement égale à Vbr, ce qui provoque la fermeture du commutateur SW. Ainsi, le commutateur SW devient passant en même temps ou presque en même temps que les diodes D et d. Le courant lié à la surtension est partagé entre le commutateur SW et la branche comportant les diodes D et d. Le commutateur SW absorbe ce qu'il peut absorber de courant jusqu'à saturation, le reste (en pratique la plus grande part du courant) étant absorbé par les diodes D et d. Une fois la surtension passée, le courant circulant dans le dispositif de protection diminue et devient égal au courant de court-circuit ISC de l'alimentation. L'interrupteur SW est dimensionné pour pouvoir absorber l'intégralité ou la majeure partie de ce courant, de façon que la diode à retournement D se bloque. Le potentiel du noeud C est alors ramené sensiblement au potentiel du noeud B par l'intermédiaire de la résistance R1, et le commutateur SW se bloque. En pratique, le commutateur SW peut se bloquer légèrement après la diode à retournement D du fait de la capacité parasite entre sa grille de commande et la borne B, qui forme un circuit RC parallèle avec la résistance R1.As long as the voltage between terminals A and B remains lower than the breakdown voltage of diode D, the protection device is off. The resistor R1 makes it possible to reduce the potential of the node C substantially to the potential of the node B (for example connected to the ground), so that the switch SW is blocked. When an overvoltage occurs, the reversing diode D and the avalanche diode d become conductive and the power supply connected between the terminals A and B is short-circuited. The voltage across the avalanche diode to pass then a zero value to a value substantially equal to V br, which causes the closing of switch SW. Thus, the switch SW turns on at the same time or almost simultaneously with the diodes D and d. The current related to the overvoltage is shared between the switch SW and the branch having the diodes D and d. The switch SW absorbs what it can absorb current until saturation, the remainder (in practice the greater part of the current) being absorbed by the diodes D and d. A once the overvoltage has passed, the current flowing in the protection device decreases and becomes equal to the short circuit current I SC of the power supply. The switch SW is sized to be able to absorb all or most of this current, so that the reversal diode D is blocked. The potential of the node C is then brought back substantially to the potential of the node B via the resistor R1, and the switch SW is blocked. In practice, the switch SW may hang slightly after the reversal diode D because of the parasitic capacitance between its control gate and the terminal B, which forms a parallel circuit RC with the resistor R1.

La figure 9 représente un autre exemple de réalisation du circuit de commande 70 du dispositif de protection de la figure 7. Dans l'exemple de la figure 9, le circuit 70 comprend la même résistance R1 que dans l'exemple de la figure 8, et comprend en outre un circuit RC comportant une résistance R2 reliant l'extrémité de la résistance R1 connectée au noeud C à la grille de commande du commutateur SW, et un condensateur C1 reliant la grille de commande du commutateur SW à la borne B.The figure 9 represents another embodiment of the control circuit 70 of the protection device of the figure 7 . In the example of the figure 9 , the circuit 70 comprises the same resistor R1 as in the example of the figure 8 and further comprises an RC circuit having a resistor R2 connecting the end of the resistor R1 connected to the node C to the control gate of the switch SW, and a capacitor C1 connecting the control gate of the switch SW to the terminal B.

Le fonctionnement du dispositif de la figure 9 est similaire à celui du dispositif de la figure 8, mais diffère du fonctionnement décrit en relation avec la figure 8 en ce que, lorsqu'une surtension apparaît, le commutateur est fermé avec un temps de retard par rapport au déclenchement des diodes D et d, ce temps de retard étant fixé par le circuit RC formé par la résistance R2 et le condensateur C1. Ainsi, au moins une partie de la surtension peut être évacuée par les diodes D et d avant que le commutateur SW ne soit fermé. Une fois la surtension passée et la diode D bloquée, le commutateur SW se bloque avec un temps de retard fixé par le circuit RC.The operation of the device of the figure 9 is similar to that of the device of the figure 8 but differs from the operation described in relation to the figure 8 in that, when an overvoltage occurs, the switch is closed with a delay time with respect to the tripping of the diodes D and d, this delay time being fixed by the circuit RC formed by the resistor R2 and the capacitor C1. Thus, at least a portion of the overvoltage can be evacuated by the diodes D and D before the switch SW is closed. Once the overvoltage has passed and the diode D is blocked, the switch SW is blocked with a delay time set by the RC circuit.

Ainsi, le circuit de la figure 9 permet de fixer un délai souhaité entre le déclenchement des diodes D et d et la fermeture du commutateur SW, et entre le blocage des diodes D et d et l'ouverture du commutateur SW.So the circuit of the figure 9 allows a desired delay to be set between triggering diodes D and d and closing switch SW, and between blocking diodes D and d and opening switch SW.

A titre d'exemple, les valeurs de la capacité C1 et de la résistance R2 sont choisies de façon à obtenir une constante de temps, et donc un temps de retard entre le déclenchement de la protection et la fermeture du commutateur SW, compris entre 5 et 100 µs, par exemple d'environ 20 ms. La capacité du condensateur C1 est par exemple comprise entre 20 nF et 2 µF, et la résistance R2 a par exemple une valeur comprise entre 10 Ω et 1 kΩ.For example, the values of the capacitor C1 and the resistor R2 are chosen so as to obtain a time constant, and therefore a delay time between the initiation of the protection and the closing of the switch SW, comprised between and 100 μs, for example about 20 ms. The capacity of the capacitor C1 is for example between 20 nF and 2 μF, and the resistance R2 has for example a value between 10 Ω and 1 kΩ.

A titre de variante, la capacité C1 peut être omise, le temps de retard entre le déclenchement de la protection et la fermeture du commutateur SW étant alors fixé par le circuit RC formé par la résistance R2 et la capacité intrinsèque du commutateur SW entre son noeud de commande et la borne B (par exemple la capacité grille-source dans le cas d'un transistor MOS, ou la capacité grille-émetteur dans le cas d'un IGBT).As a variant, the capacitor C1 may be omitted, the delay time between the tripping of the protection and the closing of the switch SW then being fixed by the circuit RC formed by the resistor R2 and the intrinsic capacitance of the switch SW between its node control and terminal B (for example the gate-source capacitance in the case of a MOS transistor, or the gate-emitter capacitance in the case of an IGBT).

La figure 10 représente un autre exemple de réalisation du circuit de commande 70 du dispositif de protection de la figure 7. Dans l'exemple de la figure 10, le circuit 70 comprend les mêmes éléments que dans l'exemple de la figure 9, et comprend en outre, en parallèle de la résistance R2, une diode D1 dont l'anode est connectée au noeud C et dont la cathode est connectée à la grille de commande du commutateur SW.The figure 10 represents another embodiment of the control circuit 70 of the protection device of the figure 7 . In the example of the figure 10 , the circuit 70 includes the same elements as in the example of the figure 9 , and further comprises, in parallel with the resistor R2, a diode D1 whose anode is connected to the node C and whose cathode is connected to the control gate of the switch SW.

Le fonctionnement du dispositif de la figure 10 est similaire à celui du dispositif de la figure 9, à ceci près que, du fait de la présence de la diode D1, le commutateur devient passant sensiblement au même moment que les diodes D et d lorsqu'une surtension survient. Ainsi, le circuit RC a pour effet de retarder la réouverture du commutateur SW en fin de surtension, mais ne retarde pas sa fermeture en début de surtension.The operation of the device of the figure 10 is similar to that of the device of the figure 9 except that, because of the presence of the diode D1, the switch turns on substantially at the same time as the diodes D and d when an overvoltage occurs. Thus, the RC circuit has the effect of delaying the reopening of the switch SW at the end of overvoltage, but does not delay its closure at the beginning of overvoltage.

Les dispositifs de protection du type décrit en relation avec les figures 7 à 10 présentent les avantages des dispositifs des figures 5 et 6. En particulier, ils permettent d'utiliser une diode à retournement de relativement faible surface, par exemple 50 mm2, alors que comme on l'a indiqué précédemment, pour des tensions de protection de l'ordre de 50 à 1000 volts, des diodes de protection à avalanche devraient avoir des surfaces de l'ordre de 1 à 10 cm2. L'ensemble du dispositif de commutation SW, par exemple un transistor MOS ou IGBT, et du circuit de commande aura par exemple une surface de l'ordre de seulement 10 à 15 mm2. Ainsi, la surface totale du dispositif de protection est inférieure à 65 mm2, et on pourra remplir la fonction assurée par un composant de protection à avalanche d'une surface de 1 à 10 cm2 .Protective devices of the type described in relation to the Figures 7 to 10 present the advantages of Figures 5 and 6 . In particular, they make it possible to use a reversal diode with a relatively small surface area, for example 50 mm 2 , whereas, as indicated previously, for protection voltages of the order of 50 to 1000 volts, diodes avalanche protection should have areas of the order from 1 to 10 cm 2 . The entire switching device SW, for example a MOS or IGBT transistor, and the control circuit will for example have a surface of the order of only 10 to 15 mm 2 . Thus, the total surface of the protection device is less than 65 mm 2 , and the function provided by an avalanche protection component of a surface of 1 to 10 cm 2 can be fulfilled.

Un avantage supplémentaire des modes de réalisation décrits en relation avec les figures 7 à 10 est que du fait de la connexion du circuit de commande 70 aux bornes de la diode à avalanche d, l'architecture du circuit de commande peut être considérablement simplifiée par rapport aux exemples des figures 5 et 6. En particulier, un circuit de commande sans circuits logiques ni programmateur ou processeur, et sans condensateur de stockage d'énergie d'alimentation, peut être réalisé. En outre, les modes de réalisation décrits ne nécessitent pas de réaliser une mesure précise de la tension ou du courant dans la branche comportant les diodes D et d.An additional advantage of the embodiments described in connection with the Figures 7 to 10 is that because of the connection of the control circuit 70 to the terminals of the avalanche diode d, the architecture of the control circuit can be considerably simplified with respect to the examples of the Figures 5 and 6 . In particular, a control circuit without logic circuits or programmer or processor, and without power storage capacitor, can be realized. In addition, the described embodiments do not require an accurate measurement of the voltage or current in the branch having diodes D and d.

Des modes de réalisation particuliers ont été décrits. Diverses variantes et modifications apparaîtront à l'homme de l'art.Particular embodiments have been described. Various variations and modifications will be apparent to those skilled in the art.

En particulier, les modes de réalisation décrits ne se limitent pas aux exemples de réalisation du circuit de commande 70 décrits en relation avec les figures 8, 9 et 10. L'homme de l'art saura adapter les exemples décrits selon l'application visée, notamment en vue de réaliser des compromis en termes de dimensionnement du commutateur SW, de la diode à retournement D, et de la diode à avalanche d. En particulier, bien que l'on ait décrit des exemples de circuits 70 constitués uniquement de composants passifs, des composants actifs tels que des transistors peuvent être ajoutés au circuit de commande du commutateur SW, notamment pour contrôler plus précisément les instants de fermeture et d'ouverture du commutateur SW.In particular, the described embodiments are not limited to the exemplary embodiments of the control circuit 70 described in connection with the Figures 8, 9 and 10 . Those skilled in the art will be able to adapt the examples described according to the intended application, in particular with a view to achieving compromises in terms of sizing of the switch SW, the reversal diode D, and the avalanche diode d. In particular, although examples of circuits 70 consisting solely of passive components have been described, active components such as transistors can be added to the control circuit of the switch SW, in particular to more precisely control the closing and switching times. opening of the SW switch.

En outre, on a décrit et représenté sur les figures uniquement des diodes de protection unidirectionnelles. Bien entendu, on pourra également prévoir des diodes de protection bidirectionnelles (dont les caractéristiques sont illustrées en figures 1 et 2 bien que non décrites).In addition, only unidirectional protection diodes have been described and shown in the figures. Of course, it will also be possible to provide protection diodes bidirectional (whose characteristics are illustrated in Figures 1 and 2 although not described).

De plus, on a décrit l'utilisation du composant de protection uniquement en association avec une ligne polarisée à une tension continue. Ce composant pourra également être utilisé dans le cas où la ligne est une ligne d'alimentation alternative, par exemple à 50 ou 60 Hz. En effet, si la surtension survient au début d'une alternance, on peut souhaiter que la diode de protection cesse d'être conductrice rapidement après l'occurrence d'une surtension sans attendre la fin d'une alternance, la durée d'une alternance étant de 10 ms dans le cas d'une alimentation à 50 Hz.In addition, the use of the protection component only in connection with a polarized line at a DC voltage has been described. This component can also be used in the case where the line is an AC power line, for example at 50 or 60 Hz. Indeed, if the surge occurs at the beginning of an alternation, it may be desirable for the protection diode ceases to conduct quickly after the occurrence of an overvoltage without waiting for the end of an alternation, the duration of an alternation being 10 ms in the case of a power supply at 50 Hz.

Claims (9)

Dispositif de protection contre des surtensions adapté à la protection d'une ligne d'alimentation, comprenant : une première branche comprenant une diode à retournement (D) en série avec une diode à avalanche (d) ; un commutateur commandé (SW) en parallèle de la première branche ; et un circuit (70) de commande du commutateur (SW) connecté aux bornes de la diode à avalanche (d). An overvoltage protection device adapted to protect a power line, comprising: a first branch comprising a reversal diode (D) in series with an avalanche diode (d); a controlled switch (SW) in parallel with the first branch; and a switch control circuit (70) connected to the terminals of the avalanche diode (d). Dispositif selon la revendication 1, dans lequel la tension de claquage (Vbr) de la diode à avalanche (d) est au moins dix fois plus faible que la tension de claquage (VBR) de la diode à retournement (D).Device according to claim 1, wherein the breakdown voltage (V br ) of the avalanche diode (d) is at least ten times lower than the breakdown voltage (V BR ) of the reversal diode (D). Dispositif selon la revendication 1 ou 2, dans lequel la tension de claquage (VBR) de la diode à retournement (D) est comprise entre 20 et 1500 V.Device according to claim 1 or 2, wherein the breakdown voltage (V BR ) of the reversal diode (D) is between 20 and 1500 V. Dispositif selon l'une quelconque des revendications 1 à 3, dans lequel le commutateur (SW) est un transistor MOS ou un transistor bipolaire à grille isolée.Apparatus according to any one of claims 1 to 3, wherein the switch (SW) is a MOS transistor or an insulated gate bipolar transistor. Dispositif selon l'une quelconque des revendications 1 à 4, dans lequel le circuit de commande (70) comprend une première résistance (R1) connectée en parallèle de la diode à avalanche (d), l'extrémité de la première résistance (R1) connectée au point milieu (C) de la première branche étant en outre reliée à un noeud de commande du commutateur (SW).Device according to any one of claims 1 to 4, wherein the control circuit (70) comprises a first resistor (R1) connected in parallel with the avalanche diode (d), the end of the first resistor (R1). connected to the midpoint (C) of the first branch being further connected to a control node of the switch (SW). Dispositif selon la revendication 5, dans lequel l'extrémité de la première résistance (R1) connectée au point milieu (C) de la première branche est connectée au noeud de commande du commutateur (SW).Apparatus according to claim 5, wherein the end of the first resistor (R1) connected to the midpoint (C) of the first branch is connected to the control node of the switch (SW). Dispositif selon la revendication 5, dans lequel l'extrémité de la première résistance (R1) connectée au point milieu (C) de la première branche est reliée au noeud de commande du commutateur (SW) par l'intermédiaire d'une deuxième résistance (R2).Device according to claim 5, wherein the end of the first resistor (R1) connected to the midpoint (C) of the first branch is connected to the control node of the switch (SW) via a second resistor ( R2). Dispositif selon la revendication 7, dans lequel le noeud de commande du commutateur (SW) est en outre relié à l'autre extrémité de la première résistance (R1) par l'intermédiaire d'un condensateur (C1).Apparatus according to claim 7, wherein the switch control node (SW) is further connected to the other end of the first resistor (R1) via a capacitor (C1). Dispositif selon la revendication 8, dans lequel une diode (D1) est connectée en parallèle de la deuxième résistance (R2) .Apparatus according to claim 8, wherein a diode (D1) is connected in parallel with the second resistor (R2).
EP15193591.3A 2015-03-19 2015-11-09 Device for surge protection Active EP3070798B1 (en)

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US10243356B2 (en) 2019-03-26
CN105990825A (en) 2016-10-05
CN105990825B (en) 2020-03-24

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