EP3055883A1 - Procédé de réalisation d'une diode électroluminescente organique - Google Patents
Procédé de réalisation d'une diode électroluminescente organiqueInfo
- Publication number
- EP3055883A1 EP3055883A1 EP14780509.7A EP14780509A EP3055883A1 EP 3055883 A1 EP3055883 A1 EP 3055883A1 EP 14780509 A EP14780509 A EP 14780509A EP 3055883 A1 EP3055883 A1 EP 3055883A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- hole
- lower layer
- substrate
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 159
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000012044 organic layer Substances 0.000 claims abstract description 41
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims description 17
- 239000012780 transparent material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 238000005755 formation reaction Methods 0.000 description 20
- 239000012790 adhesive layer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
Definitions
- the present invention generally relates to organic light emitting diodes. It receives for advantageous application a method of producing a through hole obtained by etching, within a light emitting device.
- the light-emitting diode is a semiconductor with physical properties such that the light-emitting diode has the ability to directly convert electricity into light, while being unrivaled efficiency in terms of energy consumption.
- Light-emitting diode illumination allows a homogeneous distribution of the light beam; this lighting is particularly close to the light of day. It is these advantageous characteristics that have attracted designers to take an increasing interest in light-emitting diodes for automotive applications, for example, or in the field of lighting. These light sources also represent excellent opportunities for designers.
- the present invention solves all or at least some of the disadvantages of current techniques.
- the present invention provides a simple method for using, on the same support, different light sources that can operate simultaneously or alternately and use the same support as a fixing means.
- the present invention relates to a method for producing an organic light-emitting diode comprising the following steps: the formation of a lower layer, representing a first electrode, on a first face of a substrate, the formation of an organic layer above at least a portion of the lower layer, and forming an upper layer, representing a second electrode, over at least a portion of the organic layer.
- the method is characterized by comprising forming a hole opening through both the substrate, the bottom layer, the organic layer and the top layer.
- the method according to the invention comprises forming an isolated zone of the lower layer relative to remaining zones of the lower layer; the through hole passes through said insulated area and does not intercept the contour of the insulated layer insulated area.
- the present invention also relates to an organic electroluminescent diode comprising, on a substrate, a lower layer representing a first electrode, an organic layer above the lower layer and an upper layer representing a second electrode above the organic layer.
- the diode is characterized in that it comprises a hole opening through both the substrate, the bottom layer, the organic layer and the top layer.
- the invention advantageously relates to a light emission assembly comprising an organic light-emitting diode and an additional light source configured to emit a light beam through the through hole.
- the invention also relates to a light emission assembly comprising an organic light-emitting diode and a fixing member configured so that the fastener cooperates with the wall of the opening hole.
- the present invention provides a method for producing through holes through organic light emitting diodes; a simple and inexpensive process which, advantageously thanks to a laser irradiation etching, avoids the problems inherent in organic light-emitting diode manufacturing processes (organic layer sealing problems during wet etching, short-circuit problems, etc.) .
- FIG. 1 shows a schematic longitudinal sectional view of a lower layer deposited on a substrate; said lower layer being exposed to a laser beam.
- Figure 2a shows a schematic longitudinal sectional view of the lower layer after etching of said layer by laser irradiation.
- Figure 2b is a top view of the lower layer after laser irradiation. The etching of the lower layer forms a trench separating an isolated area from the remaining areas of the lower layer.
- FIG. 3 shows a schematic longitudinal sectional view of the formation of an organic layer and an upper layer above the previously etched lower layer.
- Figure 4a shows a schematic longitudinal sectional view of a step of placing a cover over at least the upper layer; said cover being previously coated with a layer of adhesive and comprising at least one through opening.
- Figure 4b is a top view illustrating the through opening of the cover giving direct access to the upper layer.
- FIG. 5 illustrates a laser irradiation step through the through opening of the cover so as to etch the stack of layers comprising the upper layer, the organic layer, the lower layer and the substrate.
- FIG. 6 illustrates the result of the laser irradiation step forming a hole opening through the substrate, the stack of layers and the cover.
- FIG. 7 illustrates another embodiment where the lower layer, in which a trench has previously been formed, is exposed to a laser in order to etch said lower layer and the substrate.
- FIG. 8a illustrates the result of the laser irradiation etching forming a hole opening through said lower layer and the substrate.
- Figure 8b is a top view illustrating an isolated portion of the lower layer between the trench and the through hole.
- FIG. 9 illustrates a view of the stack of layers after formation of through holes in said stack.
- FIG. 10 illustrates a sectional view of the stack of layers after forming a through hole.
- the hole allows a luminous flux coming from a light source to pass through.
- the terms "on” or “above” do not necessarily mean “in contact with”.
- the deposition of a layer on another layer does not necessarily mean that the two layers are directly in contact with each other but that means that one of the layers at least partially covers the other being either directly in contact with it, or being separated from it by a film, another layer or another element.
- a numerical value includes a measurement uncertainty being estimated at a deviation, for example, of plus or minus 2% of the value.
- the method comprises forming an isolated zone of the lower layer relative to remaining zones of the lower layer.
- the formation of the isolated zone is preferably carried out by etching the lower layer so as to form a trench separating said isolated zone from the remaining zones of the lower layer.
- the formation of the through-hole is configured so that the through-hole does not intercept the contour of the insulated layer's insulated area.
- the formation of the through hole is preferably configured so that the minimum distance between the edge of the through hole and the edge of the insulated area of the lower layer is greater than 0.5 millimeter.
- the formation of the through hole is preferably performed by etching the substrate.
- a step of etching the lower layer is performed prior to the step of forming the organic layer, so as to form a trench in the lower layer; said trench having a depth equal to the thickness of said lower layer.
- the formation of a portion of the hole opening into the substrate and the lower layer is performed prior to the step of forming the organic layer.
- the formation of the through hole is made integrally after the step of forming the organic layer.
- the formation of the through hole is preferably made from the first face of the substrate.
- the formation of the opening hole is made according to an embodiment from a second face of the substrate, opposite to the first face.
- a step of placing a cover over at least the upper layer said cover being previously coated with a layer of adhesive and comprising at least one through opening; said opening being configured to be of greater width dimension than the through hole.
- the etching step of the substrate is preferably carried out through the cover so as to form the hole opening into the substrate.
- the lower layer preferably has an isolated zone separated from remaining areas of the lower layer by a trench; the opening hole crosses said insulated area and does not intercept the contour of the isolated area of the insulating layer.
- the trench follows homothetically the shape of the opening hole.
- the width of the trench separating the isolated zone from the remaining zones of the lower layer is advantageously less than 1 millimeter.
- the trench has an annular section transversely to the thickness.
- the minimum distance between the edge of the opening hole and the edge of the insulated area is preferably greater than 0.5 millimeter.
- a cover provided with at least one through opening is preferably deposited above at least the upper layer.
- the through opening of the cover and the through hole are configured so that the hole is opening through the through opening of the cover.
- the substrate and / or the cover preferably are / is chosen (s) in a transparent material.
- the lower layer is preferably selected in a transparent and conductive material.
- the following process aims to achieve one or more hole (s) opening (s) in an organic light emitting device so as to allow, for example, the passage of a luminous flux or d a fastener through said holes.
- a lower layer 20 is formed on a substrate 10.
- the substrate 10 is a flat plate made of a transparent material.
- the substrate 10 is made of glass.
- the lower layer 20 represents a first electrode, called anode.
- the lower layer 20 is composed of an inorganic material.
- the lower layer 20 is chosen from a material transparent or semi-transparent.
- a material is considered transparent (respectively semi-transparent) if it lets the light waves pass through a certain wavelength range, ie it does not attenuate (respectively partially) the intensity light waves passing through it.
- the lower layer 20 is preferably formed of a transparent conductive oxide (In English, acronym: TCO for "Transparent Conducting Oxide”).
- TCO Transparent Conducting Oxide
- the lower layer 20 may be composed of a stack of TCO / Ag / TCO / Ag type layers, where Ag represents silver.
- the lower layer 20 is chosen from a material of the type of indium tin oxide (ITO: Indium Tin Oxide). This material has electrical conductivity properties and optical transparency of interest for the manufacture of organic light emitting device.
- the lower layer 20 is transparent at least 50%, to allow the transmission of light.
- a step is taken to etch said bottom layer 20, made in this example by means of a laser 201.
- Figures 2a and 2b illustrate the formation of a trench 22 in the lower layer 20, following an etching, for example, performed by laser irradiation 201.
- the trench follows a closed line.
- the trench 22 has a depth preferably equal to the thickness of the lower layer 20.
- the trench 22 preferably has a width of at least 1 micron.
- the trench 22 thus formed allows access to the substrate 10.
- the use of a laser 201 has the advantage of forming patterns of different shapes in the lower layer 20. The pattern can be chosen from a round, oblong, square shape , or rectangular.
- the trench 22 has an annular section transverse to the thickness.
- the laser irradiation etching step creates zones 20a, 20b of the lower layer 20 which are electrically insulated from each other.
- isolated area 20b lying inside the trench 22 formed by the laser 201 is isolated from the remaining zones 20a of the lower layer 20 located outside the trench 22.
- the laser 201 used to form this trench 22 in the lower layer 20 is, for example, of the type ytterbium fiber laser, wavelength 1064 nanometers, with a maximum power of 30W.
- the laser irradiation 201 does not require a step of protecting the areas not exposed to the laser 201. This has the advantage of avoiding the use of a complex process that is potentially incompatible with the manufacture of light-emitting diodes.
- Figures 3 to 5 illustrate an exemplary embodiment for producing a hole opening into a light emitting diode.
- FIG 3 illustrates the step of forming the organic layer 30.
- the organic layer 30 is advantageously composed of one or more sublayers. These sub-layers preferably comprise specific materials, making it possible to improve the injection of electrons and holes, and consequently to improve the efficiency of the light emission device.
- the organic layer 30 may especially comprise a hole injection layer, a hole transport layer, a light emission layer produced by the recombination of the holes and electrons, a transport layer. electrons and an electron injection layer.
- the thickness of the organic layer 30 is advantageously between 10 nm and 200 nm. According to a preferred embodiment, the conditions of formation of the different sub-layers of the organic layer 30 are under a controlled atmosphere. The presence, in fact, of impurities depends on the atmosphere in which the structures are manufactured.
- the organic layer 30 may be deposited according to various techniques such as thermal evaporation, spin coating, thin film deposition (dip coating), spraying. cathodic, the atomic deposition monolayer (in English "atomic layer deposition"), or the chemical deposition monolayer (in English “chemical layer deposition”).
- the organic layer 30 is deposited on top of the lower layer 20.
- the organic layer 30 is formed so as to extend, uniformly and continuously, on either side of the wafer 22 made in the lower layer 20.
- the step of forming the upper layer 40 is carried out.
- the upper layer 40 is transparent.
- it is semi-transparent.
- the upper layer 40 is typically made of a metallic material. It may, for example, be of a material such as aluminum or calcium. It is preferably deposited by thermal evaporation or sputtering.
- the upper layer 40 is advantageously deposited on top of the organic layer 30. In a particularly advantageous manner, the upper layer 40 covers a portion of the substrate 10.
- the cover 60 As illustrated in FIG. 4, it follows a step of placing a cover 60 on the stack of layers comprising the lower layer 20, the organic layer 30 and the upper layer 40.
- the cover 60 is of preferably, coated on a first face with a layer of adhesive 50, before being deposited on the stack of layers.
- the adhesive layer 50 is preferably spread over the entire surface of the cover 60.
- the cover 60 firstly receives a cleaning by chemical treatment, so as not to introduce impurities into the system when it is put into operation. square.
- the cover 60 is made of a transparent material, configured so as to allow the light to pass.
- the cover 60 is made of glass.
- the hood 60 may be plastic or metal.
- the thickness of the cover 60 is about 1 millimeter.
- the cover 60 may be of various shapes.
- the cover 400 may be prismatic, cylindrical or cubic.
- the cover 60 has at least one opening 62 configured to be through.
- the hood 60 initially does not include a through aperture 62; the opening 62 can be achieved by laser ablation or water jet in the process according to the invention.
- the section of the opening 62 in the plane of the organic light-emitting diode, perpendicular to the thickness of said organic light-emitting diode may take the form of a polygon, or a circular or oblong hole, for example.
- the cover 60 and the adhesive layer 50 cover the stack of layers.
- the adhesive layer 50 covers the entire organic layer 30.
- the adhesive layer 50 is preferably composed of epoxy resin and has a viscosity of between 10 and 50,000 mPa.s.
- the quantity of the adhesive layer 50 required is determined as a function of the viscosity of the adhesive 50, and as a function of the desired thickness of the adhesive layer 50, after the step of placing the cover 60.
- an adhesive thickness 50 comprised between 10 and 500 microns, makes it possible to obtain a layer of adhesive 50 with a thickness preferably less than 20 microns.
- the adhesive layer 50 has the advantage, once dry, no longer react with water or with oxygen (first degradation factors of organic materials).
- the adhesive layer 50 thus arranged, acts particularly advantageously as a sealed protective barrier for the sensitive layers such as the lower layer, ie the first electrode, the organic layer and the layer. upper 40 is the second electrode.
- At least one opening 62 in the cover 60 is configured so as to be positioned above an area 20b, a zone isolated from the lower layer 20 at the end of the laser irradiation of said lower layer. 20.
- the smallest dimension of an opening 62 in the cover 60 is at least 100 times greater than the thickness of the stack comprising the lower layer 20, the organic layer 30, the upper layer 40 and the adhesive layer 50.
- the aspect ratio is at least 1000.
- such a stack has a thickness of the order of 300 to 400 nm, while an opening has a width minimum of 0.4 millimeters (mm).
- FIG. 5 illustrates a second laser irradiation step 202.
- the laser irradiation 202 is advantageously through the opening 62 of the cover 60.
- the power of the laser irradiation 202 of 20 Watts ( W) and the laser, for example, Nd: YAG 532 nanometer wavelength, are chosen so as to burn the substrate 10 to the hole.
- the cover 60 acts as a mask; the laser irradiation being effected only through the opening 62 of the cover 60.
- the pattern of the opening 62 of the cover 60 is reproduced through the substrate 10.
- FIG. 6 illustrates the formation of the through-hole 100 through the substrate 10 at the end of a second laser irradiation step 202.
- the opening 62 of the cover 60 is configured to be smaller in size than the trench 22 of the lower layer 20.
- the insulated zone 20b of the lower layer 20 there are advantageously still parts of the insulated zone 20b of the lower layer 20, not removed during etching; the portions continuously surrounding the irradiated area so as to act as an isolation zone around the hole 100.
- the remaining portions of the insulated area 20b act as an insulator preventing the entry of molecules and other atoms that can lead to the deterioration or the dysfunction of the organic light emitting diode.
- the remaining portions of the isolated zone 20b are electrically inert.
- the portions of the organic layer 30 and the upper layer 40 located in line with the remaining portions of the insulated zone 20b are also electrically inert.
- FIG. 7 illustrates another embodiment for producing a through hole 100 in an organic light emitting diode. According to this embodiment, prior to the formations of the organic layer 30 and the upper layer 40, a second laser irradiation step 202 is carried out directly on the lower layer 20, as illustrated in FIG. 7.
- the laser irradiation 202 can advantageously be made either from the first face of the substrate 10; face on which has previously been formed the lower layer 20, or from the second face of the substrate 10, opposite the first face.
- the laser irradiation 202 is made so as to be positioned above the isolated zone 20b of the lower layer 20.
- FIGS. 8a and 8b illustrate the electroluminescent device comprising the substrate 10 and the lower layer 20 at the end of the second laser irradiation step 202.
- the laser 202 forms a through hole 100 through the lower layer 20 of the substrate 10
- a portion of the isolated area 20b remains.
- the remaining portion advantageously surrounds the hole 100 continuously.
- the internal profile of the trench 22 is a homothety of the shape of the through-hole 100.
- the distance between the edge of the through-hole 100 and the edge of the isolated zone 20b of the lower layer 20 is preferably greater than 0.5 millimeter.
- FIG. 9 illustrates an electroluminescent device comprising at least one through-hole 100 formed according to the method of the invention.
- the through-hole 100 is made so as to pass through the entire stack of layers of the device, namely the substrate 10, the lower layer 20, the organic layer 30, the upper layer 40, the adhesive layer 50 and the cap 60
- the use of a laser to form the through hole 100 allows advantageously to create various shapes (round, oblong, parallelepiped, etc.) for the light emitting diode.
- FIG. 10 illustrates a sectional view of the stack of layers 10, 20, 30, 40, 50, 60 after formation of a through-hole 100.
- the through hole 100 makes it possible to let a luminous flux pass from a light source or luminous means 500 through the pattern formed in the electroluminescent device.
- the light means 500 is, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED) or a light flux.
- the method according to the invention produces a light-emitting device having the advantage of being able to combine several kinds of light sources (light-emitting diode, organic light-emitting diode).
- the light means 500 can be held on the light-emitting device by a mechanical support 600.
- the support 600 is preferably made of a metallic or plastic material or may be of wood, paper or glass.
- the through-hole 100 may, for example, directly house a light-emitting diode therein. According to another embodiment, the through hole 100 may advantageously act as a contact for one of the two electrodes.
- the through hole 100 may be traversed by a fixing member so that the electroluminescent device can be held by said fixing member.
- the fastener is inserted through the hole opening
- the fastener may be a cylindrical element.
- the electroluminescent device does not require the use of additional fastening means to be potentially attached to said electroluminescent device, in particular at its periphery.
- the method according to the invention has the advantage of forming through holes in a device comprising a set of organic light-emitting diodes. These structures can be made on a "full plate” panel to form a plurality of OLEDs; the "full plate” panel can advantageously serve not only as a support for light emitting diodes but also fixing means or support offering the choice among a variety of light sources; option proving to be particularly attractive especially in the automotive field.
- the formation of through holes through the OLED surface provides the possibility of having a transparent zone in the middle of the active zone, while maintaining a relatively simple production process via a full plate organic and metal deposit. .
- the method according to the invention through the formation of through holes, allows a better air flow in the pixels; important advantage especially for automotive applications.
- the method according to the invention eliminates short-circuit problems originating from contact areas between the lower layer 20, representing a first electrode, and the upper layer 40, representing a second electrode, notably thanks to the etching performed in the lower layer 20.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1359716A FR3011681B1 (fr) | 2013-10-07 | 2013-10-07 | Procede de realisation d'une diode electroluminescente organique |
PCT/EP2014/071232 WO2015052087A1 (fr) | 2013-10-07 | 2014-10-03 | Procédé de réalisation d'une diode électroluminescente organique |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3055883A1 true EP3055883A1 (fr) | 2016-08-17 |
Family
ID=49620195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14780509.7A Withdrawn EP3055883A1 (fr) | 2013-10-07 | 2014-10-03 | Procédé de réalisation d'une diode électroluminescente organique |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP3055883A1 (fr) |
FR (1) | FR3011681B1 (fr) |
WO (1) | WO2015052087A1 (fr) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013046545A1 (fr) * | 2011-09-26 | 2013-04-04 | パナソニック株式会社 | Procédé pour fabriquer un dispositif émetteur de lumière, et dispositif émetteur de lumière |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080094004A1 (en) * | 2004-09-09 | 2008-04-24 | Koninklijke Philips Electronics, N.V. | Light-Generating Body |
DE102008019926B4 (de) * | 2008-04-21 | 2011-07-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Beleuchtungsvorrichtung und Verfahren zur Erzeugung einer flächigen Lichtausgabe |
KR101671342B1 (ko) * | 2010-04-06 | 2016-11-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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2013
- 2013-10-07 FR FR1359716A patent/FR3011681B1/fr not_active Expired - Fee Related
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2014
- 2014-10-03 EP EP14780509.7A patent/EP3055883A1/fr not_active Withdrawn
- 2014-10-03 WO PCT/EP2014/071232 patent/WO2015052087A1/fr active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013046545A1 (fr) * | 2011-09-26 | 2013-04-04 | パナソニック株式会社 | Procédé pour fabriquer un dispositif émetteur de lumière, et dispositif émetteur de lumière |
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Publication number | Publication date |
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FR3011681B1 (fr) | 2016-12-23 |
FR3011681A1 (fr) | 2015-04-10 |
WO2015052087A1 (fr) | 2015-04-16 |
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