EP2996190A1 - Verfahren zur Auswahl einer Phasenverschiebung, Phasenverschieber, Strahlformer und Antennengruppe - Google Patents

Verfahren zur Auswahl einer Phasenverschiebung, Phasenverschieber, Strahlformer und Antennengruppe Download PDF

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Publication number
EP2996190A1
EP2996190A1 EP14306380.8A EP14306380A EP2996190A1 EP 2996190 A1 EP2996190 A1 EP 2996190A1 EP 14306380 A EP14306380 A EP 14306380A EP 2996190 A1 EP2996190 A1 EP 2996190A1
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Prior art keywords
rtps
value
phase shift
phase shifter
impedance
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EP14306380.8A
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English (en)
French (fr)
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Senad Bulja
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Alcatel Lucent SAS
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Alcatel Lucent SAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H01P1/184—Strip line phase-shifters

Definitions

  • aspects relate, in general, to a method for selecting a phase shift, a phase shifter, a beamformer and an antenna array.
  • a phase shifter provides a controllable phase shift of an input RF signal, and such devices are therefore omnipresent in telecommunications where it is desirable to modify the phase of signals.
  • the devices also find utility in radar systems, amplifier linearization, point-to-point radio and RF signal cancellation and so on.
  • the choice of the phase shifter for a particular application is influenced by many factors; for example, the amount of obtainable phase shift, the insertion losses and power handling capability.
  • the variation of phase shift is typically obtained by using semiconductor technology.
  • varactor and PIN diodes can be used as the reactance/resistance tuneable elements needed for the variation of insertion phase.
  • an RF reflection type phase shifter comprising a coupling device coupled to multiple reflective loads, n, respective ones of which include at least one variable reactance device with maximum reactance, X max , and, minimum reactance, X min , and at least two impedance transformers the characteristic impedances of which are selected according to predefined criteria to provide an increase in the value of a phase shift to be applied to a signal input to the RTPS proportional to the value of n.
  • the impedance of the or each variable reactance device can be altered by varying a DC voltage or current applied to the variable reactance device.
  • the or each variable reactance device can be a varactor diode.
  • the impedance transformers can be one quarter-wavelength long at a selected frequency of operation.
  • the impedance transformers can use microstrips or stripline technology.
  • the impedance transformers can use lumped circuit elements, such as capacitors and/or inductors for example.
  • the coupling device can be a circulator or a 3-dB coupler.
  • a method for selecting a phase shift value for an output signal of a phase shifter including a coupling device coupled to multiple reflective loads, n, respective ones of which include at least one variable reactance device with maximum reactance, X max , and, minimum reactance, X min , and at least two impedance transformers, the method comprising selecting the characteristic impedances of impedance transformers according to predefined criteria to provide an increase in the value of a phase shift to be applied to a signal input to the phase shifter proportional to the value of n.
  • the impedance of the or each variable reactance device can be modified by varying a DC voltage or current applied to the variable reactance device.
  • a beamformer for use in a wireless telecommunication network to modify the transmission profile of an antenna array, the beamformer including an RF reflection type phase shifter (RTPS) comprising a coupling device coupled to multiple reflective loads, n, respective ones of which include at least one variable reactance device with maximum reactance, X max , and, minimum reactance, X min , and at least two impedance transformers the characteristic impedances of which are selected according to predefined criteria to provide an increase in the value of a phase shift to be applied to a signal input to the RTPS proportional to the value of n.
  • the antenna array can be composed of multiple antennas, wherein the phase shifter is operable to modify the phase of respective signals input to the multiple antennas.
  • the phase shifter can comprise multiple parallel phase shift stages to apply respective different phase shifts to the respective signals input to the multiple antennas.
  • an antenna array in a wireless telecommunication network including multiple antennas operable to receive input from a beamformer that is operable to modify the transmission profile of the antenna array, the beamformer including an RF reflection type phase shifter (RTPS) comprising a coupling device coupled to multiple reflective loads, n, respective ones of which include at least one variable reactance device with maximum reactance, X max , and, minimum reactance, X min , and at least two impedance transformers the characteristic impedances of which are selected according to predefined criteria to provide an increase in the value of a phase shift to be applied to a signal input to the RTPS proportional to the value of n.
  • RTPS RF reflection type phase shifter
  • a typical value for this ratio is usually between 3-10.
  • a reflective type phase shifter 100 as depicted schematically in figure 1 is widely used in telecommunications. Its structure is relatively simple and consists of a 3-dB coupler 101 and varactor diodes 103 as part of the circuitry of the reflective loads.
  • Z is the variable impedance of the reflective load
  • Z R + jX .
  • This impedance may come from the varactor diode alone or from a series/parallel configuration of a varactor diode and lumped elements for example.
  • variable impedance device if the variable impedance device (varactor diode in this case) is ideal, i.e. the real part of impedance Z is 0, only changes to the reactive part of the impedance Z induce a change in phase.
  • this is typically not achieved in practice since all semiconductor devices have a finite parasitic resistance, no matter how small.
  • a typical 3-dB coupler in addition to the insertion loss arising from the finite resistance of the varactor diodes, a typical 3-dB coupler exhibits an insertion loss in the range of 0.3 - 0.5 dB, although this applies to a signal travelling in one direction.
  • the input signal travels through the 3-dB coupler, reaches the reflective loads and gets reflected from them to travel through the 3-dB coupler again and towards the output port.
  • the insertion loss of a 3-dB coupler in a RTPS device is two times higher than its rated value.
  • the total insertion loss contribution of a 3-dB coupler in the RTPS configuration can easily occupy a significant portion of the total insertion loss (which consists of the losses of a 3-dB coupler and the losses due to the finite resistance of the load impedance, Z).
  • the varactor diode In the design of an RTPS, the varactor diode alone in the circuit of the reflective load usually provides a limited amount of phase shift. A reason for this is that the capacitance ratio (defined as the ratio of the maximum to minimum capacitance) of the varactor diode cannot be indefinitely increased, since this value is technology dependent.
  • the capacitance ratio of a typical varactor diode is normally a single digit number, and almost always lower than 10.
  • the varactor diode In order to increase the insertion phase of an RTPS, the varactor diode is connected in series with an inductor; however, increased phase shift comes at the expense of increased insertion loss due to the parasitic resistance of the additional inductor. Nevertheless, resonating a varactor with an inductor has become regular practice and is often pursued in the industry.
  • phase shift obtained by an inductor resonated varactor diode need to be even further increased.
  • One approach to achieve this can be to use a cascaded connection of two RTPS devices, which inevitably doubles the amount of phase shift; however, it also doubles the insertion losses.
  • Increasing the amount of phase shift of an RTPS device without necessarily increasing the insertion losses is typically conditioned by one aspect. That is, for lower insertion losses and cost reduction, the number of 3-dB couplers needs to be kept to a minimum - one in this case. Bearing this condition in mind, the amount of obtainable phase shift can be increased by using two varactor diodes per reflective load of a 3-dB coupler, as shown in [3] and [4], and figures 2 and 3 for example.
  • Figure 2 is a schematic representation of an RTPS device.
  • figure 3 is a schematic representation of an RTPS device 300 that provides an increased amount of phase shift.
  • Z c a transformer, Z c , needs to be added so as to compensate for the high losses of the resonant circuit formed using two varactor diodes and inductors. However, this does not quantify in any way the full capabilities of the circuit.
  • a generic circuit of multiple active element load RTPS using only one 3-dB coupler is provided, which can provide optimum values of phase shift.
  • proper selection of impedance transformers, k i,j which allow increase of phase shift using only one 3-dB coupler is provided.
  • the insertion losses of the circuit according to an example are not a multiple integer of the order of the phase shifter, but are increased by only a small amount due to the presence of additional active elements per load.
  • Figure 4 is a schematic representation of a generic circuit 400 consisting of a 3-dB coupler 401, transformers k i,j and impedance z according to an example.
  • Impedance z is used to represent any variable impedance which can be in the form of a varactor diode alone or any series/parallel combination with lumped elements for example.
  • Y in k 12 2 k 11 2 Y + 1 k 11 2 Y 2
  • Y 2 k 22 2 k 21 2 Y + 1 k 12 2 Y 3
  • Y 3 k 32 2 k 31 2 Y + 1 k 31 2 Y 4
  • Y n - 1 k n - 1 , 2 2 k n - 1 , 1 2 Y + 1 k n - 1 , 1 2 Y n
  • Y n Y n Y
  • n the order of the absorptive filter
  • Y Z -1 .
  • b 0 k 12 2 k 11 2 Y
  • the first four roots of (18) are complex conjugate, while the remaining two roots are real with equal magnitude, but opposite signs. As such, there is always one solution to (18) that yields the optimum value of the parameter q.
  • the first term on the right represents the insertion loss of the reflective circuit of the proposed RTPS.
  • the second term on the right is the insertion loss of a 3-dB coupler.
  • the amount of phase shift of RTPS can be increased in a linear fashion with respect to the pairs of active elements, without increasing the insertion loss in the same linear fashion.
  • the insertion loss of a 3-dB coupler is 0.3 dB (2*0.3 dB in RTPS configuration)
  • q 1
  • two RTPS - one with two active elements per reflective load and the other with a three active elements per reflective load - are described in more detail, although it will be appreciated that other variations are possible.
  • a two active element per reflective load RTPS 600 is schematically represented in figure 6 .
  • Setting n 2 in (10) and substituting (10) into (13), the following expression for the transmission coefficient is obtained:
  • Equation (25) assumes that the 3-dB coupler 601 is ideal.
  • the 3-dB coupler has a rated insertion loss of 0.3 dB and its operating frequency range is 2.3-2.7 GHz.
  • the insertion loss and phase shift performance of a first order phase shifter according to an example are depicted in figures 7 and 8 .
  • the capacitance of the varactor diode varies between 0.4 pF to 1.6 pF in the steps of 0.1 pF.
  • figure 7 is graph of the insertion loss of a first order phase shifter according to an example in which capacitance varies from 0.4 pF to 1.6 pF in steps of 0.1 pF
  • figure 8 is a graph of the insertion phase of the first order phase shifter.
  • a three active element per reflective load RTPS 1300 is schematically represented in Figure 13 .
  • Setting n 3 in (10) and substituting (10) into (13), the following expression for the transmission coefficient is obtained:
  • a - k 11 2
  • b Z 0 k 12 2 + Z 0 k 21 2
  • c - k 11 2 k 22 2
  • d Z 0 k 12 2 k 22 2 .

Landscapes

  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
EP14306380.8A 2014-09-09 2014-09-09 Verfahren zur Auswahl einer Phasenverschiebung, Phasenverschieber, Strahlformer und Antennengruppe Withdrawn EP2996190A1 (de)

Priority Applications (1)

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EP14306380.8A EP2996190A1 (de) 2014-09-09 2014-09-09 Verfahren zur Auswahl einer Phasenverschiebung, Phasenverschieber, Strahlformer und Antennengruppe

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3319165A1 (de) 2016-11-07 2018-05-09 Nokia Technologies OY Funkfrequenzreflexionstyp-phasenverschieber und verfahren zur phasenverschiebung

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859972A (en) * 1988-11-01 1989-08-22 The Board Of Trustees Of The University Of Illinois Continuous phase shifter for a phased array hyperthermia system
US5276411A (en) * 1992-06-01 1994-01-04 Atn Microwave, Inc. High power solid state programmable load
US6255908B1 (en) * 1999-09-03 2001-07-03 Amplix Temperature compensated and digitally controlled amplitude and phase channel amplifier linearizer for multi-carrier amplification systems
US20050040874A1 (en) * 2003-04-02 2005-02-24 Allison Robert C. Micro electro-mechanical system (mems) phase shifter
EP2544369A1 (de) * 2011-07-04 2013-01-09 Alcatel Lucent Dämpfungsglied

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4859972A (en) * 1988-11-01 1989-08-22 The Board Of Trustees Of The University Of Illinois Continuous phase shifter for a phased array hyperthermia system
US5276411A (en) * 1992-06-01 1994-01-04 Atn Microwave, Inc. High power solid state programmable load
US6255908B1 (en) * 1999-09-03 2001-07-03 Amplix Temperature compensated and digitally controlled amplitude and phase channel amplifier linearizer for multi-carrier amplification systems
US20050040874A1 (en) * 2003-04-02 2005-02-24 Allison Robert C. Micro electro-mechanical system (mems) phase shifter
EP2544369A1 (de) * 2011-07-04 2013-01-09 Alcatel Lucent Dämpfungsglied

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WON-TAE KANG ET AL: "Reflection-Type Low-Phase-Shift Attenuator", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 46, no. 7, 1 July 1998 (1998-07-01), XP011037211, ISSN: 0018-9480 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3319165A1 (de) 2016-11-07 2018-05-09 Nokia Technologies OY Funkfrequenzreflexionstyp-phasenverschieber und verfahren zur phasenverschiebung

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