EP2973669A4 - Improved vjfet devices - Google Patents
Improved vjfet devicesInfo
- Publication number
- EP2973669A4 EP2973669A4 EP14779991.0A EP14779991A EP2973669A4 EP 2973669 A4 EP2973669 A4 EP 2973669A4 EP 14779991 A EP14779991 A EP 14779991A EP 2973669 A4 EP2973669 A4 EP 2973669A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- improved
- vjfet
- devices
- vjfet devices
- improved vjfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
- H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
- H01L29/66909—Vertical transistors, e.g. tecnetrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361792141P | 2013-03-15 | 2013-03-15 | |
PCT/US2014/027915 WO2014165309A1 (en) | 2013-03-15 | 2014-03-14 | Improved vjfet devices |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2973669A1 EP2973669A1 (en) | 2016-01-20 |
EP2973669A4 true EP2973669A4 (en) | 2016-11-09 |
Family
ID=51523659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP14779991.0A Withdrawn EP2973669A4 (en) | 2013-03-15 | 2014-03-14 | Improved vjfet devices |
Country Status (4)
Country | Link |
---|---|
US (1) | US8860098B2 (en) |
EP (1) | EP2973669A4 (en) |
CN (1) | CN105190852B (en) |
WO (1) | WO2014165309A1 (en) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10103240B2 (en) * | 2010-04-30 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode |
JP6471508B2 (en) * | 2015-01-19 | 2019-02-20 | 富士電機株式会社 | Semiconductor device |
US10396215B2 (en) | 2015-03-10 | 2019-08-27 | United Silicon Carbide, Inc. | Trench vertical JFET with improved threshold voltage control |
JP6441190B2 (en) * | 2015-09-11 | 2018-12-19 | 株式会社東芝 | Manufacturing method of semiconductor device |
JP6448513B2 (en) * | 2015-11-16 | 2019-01-09 | 株式会社東芝 | Semiconductor device |
EP3391417A1 (en) * | 2015-12-15 | 2018-10-24 | General Electric Company | Edge termination designs for silicon carbide super-junction power devices |
US9502522B1 (en) * | 2016-02-29 | 2016-11-22 | Chongqing Pingwei Enterprise Co., Ltd. | Mass production process of high voltage and high current Schottky diode with diffused design |
US10243039B2 (en) * | 2016-03-22 | 2019-03-26 | General Electric Company | Super-junction semiconductor power devices with fast switching capability |
US11075264B2 (en) * | 2016-05-31 | 2021-07-27 | Cree, Inc. | Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods |
DE102016112970B3 (en) * | 2016-07-14 | 2017-08-31 | Infineon Technologies Austria Ag | Method of making a superjunction device |
DE102017115412A1 (en) | 2016-07-14 | 2018-01-18 | Infineon Technologies Austria Ag | Process for producing a superconducting device |
DE102016115758B3 (en) * | 2016-08-25 | 2018-03-01 | Infineon Technologies Austria Ag | Semiconductor device containing a superjunction structure |
EP3510637A4 (en) * | 2016-09-09 | 2020-04-15 | United Silicon Carbide Inc. | Trench vertical jfet with improved threshold voltage control |
US10861931B2 (en) * | 2016-12-08 | 2020-12-08 | Cree, Inc. | Power semiconductor devices having gate trenches and buried edge terminations and related methods |
US10263070B2 (en) * | 2017-06-12 | 2019-04-16 | Alpha And Omega Semiconductor (Cayman) Ltd. | Method of manufacturing LV/MV super junction trench power MOSFETs |
US10333005B2 (en) * | 2017-09-06 | 2019-06-25 | Semiconductor Components Industries, Llc | Merged P-intrinsic-N (PIN) Schottky diode |
JP6870547B2 (en) * | 2017-09-18 | 2021-05-12 | 株式会社デンソー | Semiconductor devices and their manufacturing methods |
US10672775B2 (en) * | 2018-05-25 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having strap cell |
US10636660B2 (en) * | 2018-09-28 | 2020-04-28 | General Electric Company | Super-junction semiconductor device fabrication |
US11233157B2 (en) * | 2018-09-28 | 2022-01-25 | General Electric Company | Systems and methods for unipolar charge balanced semiconductor power devices |
US10957759B2 (en) * | 2018-12-21 | 2021-03-23 | General Electric Company | Systems and methods for termination in silicon carbide charge balance power devices |
JP7292175B2 (en) * | 2019-10-16 | 2023-06-16 | 株式会社東芝 | semiconductor equipment |
JP7472477B2 (en) * | 2019-12-02 | 2024-04-23 | 富士電機株式会社 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE |
EP3940788A1 (en) | 2020-07-16 | 2022-01-19 | Infineon Technologies AG | Semiconductor device with complementarily doped regions and method of manufacturing |
US11563322B2 (en) * | 2020-09-14 | 2023-01-24 | Infineon Technologies Ag | RC snubber |
CN113054000A (en) * | 2021-03-15 | 2021-06-29 | 无锡新洁能股份有限公司 | Super junction type field effect transistor and manufacturing method thereof |
US11955567B2 (en) * | 2022-02-16 | 2024-04-09 | Leap Semiconductor Corp. | Wide-band gap semiconductor device and method of manufacturing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196602A (en) * | 2000-01-12 | 2001-07-19 | Hitachi Ltd | Electrostatic induction transistor |
EP1542270A1 (en) * | 2002-07-24 | 2005-06-15 | Sumitomo Electric Industries, Ltd. | Vertical junction field effect transistor and method for fabricating the same |
US20070267664A1 (en) * | 2006-05-22 | 2007-11-22 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20080290403A1 (en) * | 2007-05-24 | 2008-11-27 | Kabushiki Kaisha Toshiba | Semiconductor apparatus |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4851694B2 (en) * | 2004-08-24 | 2012-01-11 | 株式会社東芝 | Manufacturing method of semiconductor device |
US20090166722A1 (en) | 2007-12-28 | 2009-07-02 | Alpha & Omega Semiconductor, Ltd: | High voltage structures and methods for vertical power devices with improved manufacturability |
US8575695B2 (en) * | 2009-11-30 | 2013-11-05 | Alpha And Omega Semiconductor Incorporated | Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode |
-
2014
- 2014-03-14 EP EP14779991.0A patent/EP2973669A4/en not_active Withdrawn
- 2014-03-14 US US14/212,299 patent/US8860098B2/en active Active
- 2014-03-14 WO PCT/US2014/027915 patent/WO2014165309A1/en active Application Filing
- 2014-03-14 CN CN201480010130.1A patent/CN105190852B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001196602A (en) * | 2000-01-12 | 2001-07-19 | Hitachi Ltd | Electrostatic induction transistor |
EP1542270A1 (en) * | 2002-07-24 | 2005-06-15 | Sumitomo Electric Industries, Ltd. | Vertical junction field effect transistor and method for fabricating the same |
US20070267664A1 (en) * | 2006-05-22 | 2007-11-22 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
US20080290403A1 (en) * | 2007-05-24 | 2008-11-27 | Kabushiki Kaisha Toshiba | Semiconductor apparatus |
Non-Patent Citations (1)
Title |
---|
See also references of WO2014165309A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014165309A1 (en) | 2014-10-09 |
EP2973669A1 (en) | 2016-01-20 |
CN105190852B (en) | 2018-09-11 |
US20140264477A1 (en) | 2014-09-18 |
US8860098B2 (en) | 2014-10-14 |
CN105190852A (en) | 2015-12-23 |
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Legal Events
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A4 | Supplementary search report drawn up and despatched |
Effective date: 20161010 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/335 20060101ALI20161004BHEP Ipc: H01L 29/06 20060101ALI20161004BHEP Ipc: H01L 29/808 20060101AFI20161004BHEP Ipc: H01L 29/417 20060101ALN20161004BHEP Ipc: H01L 29/10 20060101ALI20161004BHEP Ipc: H01L 29/16 20060101ALI20161004BHEP |
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17Q | First examination report despatched |
Effective date: 20181022 |
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Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
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18D | Application deemed to be withdrawn |
Effective date: 20190302 |