EP2957097A4 - Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés - Google Patents

Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés

Info

Publication number
EP2957097A4
EP2957097A4 EP14752193.4A EP14752193A EP2957097A4 EP 2957097 A4 EP2957097 A4 EP 2957097A4 EP 14752193 A EP14752193 A EP 14752193A EP 2957097 A4 EP2957097 A4 EP 2957097A4
Authority
EP
European Patent Office
Prior art keywords
image sensor
dynamic range
cmos image
high dynamic
associated methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14752193.4A
Other languages
German (de)
English (en)
Other versions
EP2957097A2 (fr
Inventor
Jiang Jutao
Matt Borg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SiOnyx LLC
Original Assignee
SiOnyx LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SiOnyx LLC filed Critical SiOnyx LLC
Priority claimed from PCT/US2014/016979 external-priority patent/WO2014127376A2/fr
Publication of EP2957097A2 publication Critical patent/EP2957097A2/fr
Publication of EP2957097A4 publication Critical patent/EP2957097A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
EP14752193.4A 2013-02-15 2014-02-18 Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés Withdrawn EP2957097A4 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361765599P 2013-02-15 2013-02-15
PCT/US2014/016979 WO2014127376A2 (fr) 2013-02-15 2014-02-18 Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés

Publications (2)

Publication Number Publication Date
EP2957097A2 EP2957097A2 (fr) 2015-12-23
EP2957097A4 true EP2957097A4 (fr) 2016-07-27

Family

ID=54540268

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14752193.4A Withdrawn EP2957097A4 (fr) 2013-02-15 2014-02-18 Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés

Country Status (1)

Country Link
EP (1) EP2957097A4 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158398A1 (en) * 2006-06-27 2008-07-03 Transchip, Inc. CMOS Image Sensor With Increased Dynamic Range
US20080192133A1 (en) * 2007-02-08 2008-08-14 Sony Corporation Solid-state imaging device and image capture apparatus
US20080284884A1 (en) * 2007-05-17 2008-11-20 Sony Corporation Image sensor, electronic apparatus, and driving method of electronic apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080158398A1 (en) * 2006-06-27 2008-07-03 Transchip, Inc. CMOS Image Sensor With Increased Dynamic Range
US20080192133A1 (en) * 2007-02-08 2008-08-14 Sony Corporation Solid-state imaging device and image capture apparatus
US20080284884A1 (en) * 2007-05-17 2008-11-20 Sony Corporation Image sensor, electronic apparatus, and driving method of electronic apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2014127376A2 *

Also Published As

Publication number Publication date
EP2957097A2 (fr) 2015-12-23

Similar Documents

Publication Publication Date Title
HK1215486A1 (zh) 處理高動態範圍圖像
HK1209901A1 (en) Big small pixel scheme for image sensors and its uses
GB2520142B (en) Solid-state imaging apparatus and imaging system
HUE040383T2 (hu) Képek és videó dinamika tartománybeli kódolása
EP2992673A4 (fr) Procédé et dispositif pour l'obtention d'image à plage dynamique étendue
EP3078191A4 (fr) Capteur d'image ayant une grande plage dynamique
HK1207473A1 (en) Image sensor pixel for high dynamic range image sensor
EP3330739A4 (fr) Dispositif d'imagerie de plage et dispositif d'imagerie à semi-conducteur
GB2532906B (en) Image acquisition device, and imaging device
GB201318404D0 (en) An image sensor
GB2517559B (en) Solid-state image sensor
HK1202985A1 (en) Image sensor and imaging device
HK1220309A1 (zh) 高動態范圍視頻編碼中的預抖動
PT2962330T (pt) Sensor de imagem com porta anti-blooming
HK1206150A1 (en) Image sensor and method of operating the same
GB2540321B (en) Compressing high dynamic range images
HK1223747A1 (zh) 適用於 成像傳感器的放大器
GB2510372B (en) Imaging sensor
GB201515749D0 (en) High dynamic range imaging systems
GB201411031D0 (en) Improved high dynamic range imaging
EP2957097A4 (fr) Capteur d'images cmos à plage dynamique étendue ayant des propriétés anti-éblouissement, et procédés associés
GB201321547D0 (en) Capturing and processing images
GB201300190D0 (en) High speed imaging sensor

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20150904

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SIONYX, LLC

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20160628

RIC1 Information provided on ipc code assigned before grant

Ipc: H04N 5/359 20110101ALI20160622BHEP

Ipc: H04N 3/14 20060101AFI20160622BHEP

Ipc: H04N 5/353 20110101ALI20160622BHEP

Ipc: H04N 5/355 20110101ALI20160622BHEP

17Q First examination report despatched

Effective date: 20171115

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20180526