EP2952472A3 - Improved method for the production of suspended elements with different thicknesses for mems and nems structure - Google Patents

Improved method for the production of suspended elements with different thicknesses for mems and nems structure Download PDF

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Publication number
EP2952472A3
EP2952472A3 EP15170146.3A EP15170146A EP2952472A3 EP 2952472 A3 EP2952472 A3 EP 2952472A3 EP 15170146 A EP15170146 A EP 15170146A EP 2952472 A3 EP2952472 A3 EP 2952472A3
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EP
European Patent Office
Prior art keywords
suspended
different thicknesses
mems
production
improved method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15170146.3A
Other languages
German (de)
French (fr)
Other versions
EP2952472A2 (en
EP2952472B1 (en
Inventor
Audrey Berthelot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Publication of EP2952472A2 publication Critical patent/EP2952472A2/en
Publication of EP2952472A3 publication Critical patent/EP2952472A3/en
Application granted granted Critical
Publication of EP2952472B1 publication Critical patent/EP2952472B1/en
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349Creating layers of material on a substrate
    • B81C1/00357Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349Creating layers of material on a substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)

Abstract

Procédé de réalisation d'un dispositif N/MEMS comportant une structure dotée d'une partie active ayant un premier élément suspendu et un deuxième élément suspendu d'épaisseurs différentes, le procédé comprenant des étapes suivantes :
- Former dans un premier substrat (100) une zone sacrificielle (105),
- Reporter une couche donnée sur la zone sacrificielle,
- Définir dans ladite couche donnée un premier élément suspendu en regard de la première zone sacrificielle,
- Définir un deuxième élément suspendu dans le premier substrat et ladite couche donnée,
- Libérer au moins le premier élément suspendu.

Figure imgaf001
A method of producing an N / MEMS device having a structure having an active portion having a first suspended member and a second suspended member of different thicknesses, the method comprising the steps of:
- forming in a first substrate (100) a sacrificial zone (105),
- Postpone a given layer on the sacrificial zone,
Defining in said given layer a first element suspended opposite the first sacrificial zone,
Define a second element suspended in the first substrate and said given layer,
- Release at least the first suspended element.
Figure imgaf001

EP15170146.3A 2014-06-05 2015-06-01 Improved method for the production of suspended elements with different thicknesses for mems and nems structure Not-in-force EP2952472B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1455107A FR3021965B1 (en) 2014-06-05 2014-06-05 IMPROVED REALIZATION METHOD OF SUSPENDED ELEMENTS OF DIFFERENT THICKNESSES FOR MEMS AND NEMS STRUCTURE

Publications (3)

Publication Number Publication Date
EP2952472A2 EP2952472A2 (en) 2015-12-09
EP2952472A3 true EP2952472A3 (en) 2016-01-13
EP2952472B1 EP2952472B1 (en) 2017-05-17

Family

ID=51905222

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15170146.3A Not-in-force EP2952472B1 (en) 2014-06-05 2015-06-01 Improved method for the production of suspended elements with different thicknesses for mems and nems structure

Country Status (3)

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US (1) US9802817B2 (en)
EP (1) EP2952472B1 (en)
FR (1) FR3021965B1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105513945A (en) * 2014-09-26 2016-04-20 中芯国际集成电路制造(上海)有限公司 Semiconductor device, production method thereof, and electronic device
FR3048425B1 (en) 2016-03-07 2021-02-12 Soitec Silicon On Insulator STRUCTURE FOR DEVICE WITH INTEGRATED ELECTROMECHANICAL MICROSYSTEMS
US9988260B2 (en) * 2016-04-29 2018-06-05 Nxp Usa, Inc. Rough MEMS surface
FR3063992B1 (en) * 2017-03-16 2021-07-16 Commissariat Energie Atomique MICRO-DEVICE INCLUDING AT LEAST ONE MOBILE ELEMENT
US11795052B2 (en) * 2020-09-29 2023-10-24 Te Connectivity Solutions Gmbh Constraint for a sensor assembly
US11742451B2 (en) * 2020-11-24 2023-08-29 Cisco Technology, Inc. Integrate stressor with Ge photodiode using a substrate removal process
FR3135078B1 (en) * 2022-04-29 2024-03-29 Commissariat Energie Atomique Process for manufacturing a MEMS device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004119A2 (en) * 2005-06-30 2007-01-11 Koninklijke Philips Electronics N.V. A method of manufacturing a mems element
WO2009072704A1 (en) * 2007-12-05 2009-06-11 Electronics And Telecommunications Research Institute Micro piezoresistive pressure sensor and manufacturing method thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2933683B1 (en) * 2008-07-09 2010-09-03 Commissariat Energie Atomique MEMS / NENS STRUCTURE COMPRISING A PARTIALLY MONOCRYSTALLINE ANCHOR AND METHOD OF MANUFACTURING SAME
US8193595B2 (en) * 2009-12-31 2012-06-05 Stmicroelectronics, Inc. Method of forming a die having an IC region adjacent a MEMS region
FR2977884B1 (en) 2011-07-12 2016-01-29 Commissariat Energie Atomique METHOD FOR PRODUCING A SUSPENDED MEMBRANE STRUCTURE AND ELECTRODE BURNING
FR2983189B1 (en) 2011-11-30 2014-02-07 Commissariat Energie Atomique METHOD FOR PRODUCING A STRUCTURE COMPRISING AT LEAST ONE ACTIVE PART HAVING DIFFERENT THICKNESS AREAS
FR2983188B1 (en) 2011-11-30 2016-07-01 Commissariat Energie Atomique METHOD FOR PRODUCING A STRUCTURE COMPRISING AT LEAST ONE MULTI-THROUGH ACTIVE PART
US9255000B2 (en) * 2012-12-22 2016-02-09 Robert Bosch Gmbh CMOS integrated moving-gate transducer with silicon as a functional layer
FR3011835B1 (en) * 2013-10-16 2015-12-25 Commissariat Energie Atomique METHOD FOR ELECTROCHEMICALLY PRODUCING AT LEAST ONE POROUS AREA OF A MICRO AND / OR NANOELECTRONIC STRUCTURE
US20160093530A1 (en) * 2014-09-29 2016-03-31 Innovative Micro Technology Method for forming through substrate vias
US10167189B2 (en) * 2014-09-30 2019-01-01 Analog Devices, Inc. Stress isolation platform for MEMS devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007004119A2 (en) * 2005-06-30 2007-01-11 Koninklijke Philips Electronics N.V. A method of manufacturing a mems element
WO2009072704A1 (en) * 2007-12-05 2009-06-11 Electronics And Telecommunications Research Institute Micro piezoresistive pressure sensor and manufacturing method thereof

Also Published As

Publication number Publication date
US20150353350A1 (en) 2015-12-10
US9802817B2 (en) 2017-10-31
EP2952472A2 (en) 2015-12-09
EP2952472B1 (en) 2017-05-17
FR3021965A1 (en) 2015-12-11
FR3021965B1 (en) 2016-07-29

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