EP2909841B1 - Verfahren und vorrichtung zur erzeugung eines fokussierten starkstromstrahls mit geladenen teilchen - Google Patents

Verfahren und vorrichtung zur erzeugung eines fokussierten starkstromstrahls mit geladenen teilchen Download PDF

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Publication number
EP2909841B1
EP2909841B1 EP13795817.9A EP13795817A EP2909841B1 EP 2909841 B1 EP2909841 B1 EP 2909841B1 EP 13795817 A EP13795817 A EP 13795817A EP 2909841 B1 EP2909841 B1 EP 2909841B1
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Prior art keywords
laser pulse
target
generating
laser
charged particles
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English (en)
French (fr)
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EP2909841A1 (de
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Julien Fuchs
Bruno ALBERTAZZI
Henri PEPIN
Emmanuel D'HUMIERES
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Institut National de La Recherche Scientifique INRS
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
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Institut National de La Recherche Scientifique INRS
Centre National de la Recherche Scientifique CNRS
Ecole Polytechnique
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/14—Arrangements for focusing or reflecting ray or beam
    • H01J3/20—Magnetic lenses
    • H01J3/22—Magnetic lenses using electromagnetic means only
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means

Definitions

  • the present invention relates to methods for generating a focused beam of charged particles of high current and devices for generating such beams.
  • the invention relates to a method for generating a focused pulse beam of charged particles of high current, the particle beam having for example a duration of the order of one picosecond, a current of about kilo-ampere and being formed of particles having an energy of the order of the megaelectronvolt.
  • such beams can be generated by means of an interaction between a high power laser and a solid target.
  • These beams are usually strongly divergent and it is desirable to be able to focus them for applications such as the sounding of physical phenomena, inertial fusion or the generation of intense radiation.
  • chromatic focusing devices for example the one described in "Ultrafast laser-driven microlens to focus and energy-select mega-electron volt protons" by T. Toncian et al. (SCIENCE, Vol 312, April 21, 2006 ), however such a device selects an energy in the spectrum of the particle beam and a large part of the beam is therefore not focused.
  • the invention provides a method for generating a focused charged particle beam according to claim 1.
  • an intense and compact magnetic field structure can be generated in the target.
  • the amplitude of these fields is sufficient to focus a pulsed beam of charged particles of strong current without being substantially disturbed by the field generated by said beam.
  • the focus may be stable throughout the duration of passage of the charged particle beam, for example several picoseconds, which allows an achromatic focusing of the pulsed beam of charged particles.
  • the intensity of focus is adjustable according to the intensity of the laser pulse. Focusing positively or negatively charged particles is possible simply by changing the direction of propagation of the laser pulse generating the magnetic field structure with respect to the direction of propagation of the pulsed charged particle beam.
  • the invention also relates to a device for generating a focused charged particle beam according to claim 9.
  • the invention relates to a method for generating a focused pulse beam of charged particles of high current 10 .
  • Such a particle beam 10 may have a duration of the order of one picosecond, for example between a few tens of femtoseconds and a few tens of picoseconds, for example three hundred femtoseconds.
  • Such a particle beam 10 may have a current of the order of one kilo-ampere, for example from a few amperes to a few mega-amperes, and be formed of particles having an energy of up to a few tens of megaelectronvolts, for example up to sixty megaelectronvolts.
  • the particle beam 10 may comprise a large fraction of particles with an energy higher than the megaelectronvolt, for example more than half of the particles.
  • Such beams are for example used in applications such as probing physical phenomena, inertial fusion or the generation of intense radiation.
  • such a beam 10 can for example be generated by an interaction between a high power generation laser pulse 20 and a generation target 30 .
  • the generation laser pulse 20 can have a high power, for example a hundred terawatts.
  • the laser beam may for example consist of a pulse having an energy of about thirty joules and a duration of about three hundred femtoseconds.
  • the intensity of the first laser pulse may for example be between a few Joules and a few kilojoules
  • the duration of the laser pulse may be between a few tens of femtoseconds and a few tens of picoseconds.
  • the generation laser pulse 20 can be generated 1100 by a first high power laser source 21 and propagate in a propagation direction X L1 .
  • the generation target 30 is a solid target, for example an aluminum film 15 microns thick, as described in FIG. "Ultrafast laser-driven microlens to focus and energy-select mega-electron volt protons" by T. Toncian et al. (SCIENCE, Vol 312, April 21, 2006 ) and references cited in this article.
  • An interaction 1200 between the generation pulse 20 and the generation target 30 can be obtained by at least partially focusing said pulse on said target.
  • the generation laser pulse 20 is focused, by means of optical focusing devices, on a front face 31 of the generation target 30 at the a focal spot 32 of reduced dimensions, for example from about 6 micrometers wide to half the maximum intensity (“FWHM").
  • This laser pulse 20 creates a plasma 34 at the front face 31 of the generation target 30 by ionizing the atoms of the target 30 located at the focal spot 32 .
  • the laser pulse 20 heats the generation target 30 and communicates to the electrons of said target 30 a large thermal energy that can cause a portion 35 of said electrons to cross the target to escape at the rear face 33, said face rear 33 being a face of the generation target 30 opposite to the front face 31 in a direction of thickness X T1 of the first target, said direction of thickness X T1 being for example substantially perpendicular to the extension plane of the first target Y T1 Z T1 .
  • the thickness direction X T1 of the generation target 30 and the propagation direction of the first laser pulse X L1 may be substantially collinear.
  • the propagation direction X L1 of the laser can be inclined with respect to said thickness direction of the first target X T1 , for example 45 ° or more.
  • the first laser pulse 20 thus generates an electron displacement 35 in the thickness of the generation target 30 which constitutes an electron beam 35 moved substantially in the direction of thickness X T1 of the generation target 30 .
  • these electrons can generate significant electric fields 36 at said rear face 33 (of the order of tera-volt per meter).
  • These electric fields 36 can in particular be intense enough to pull ions 11 from the back face (for example impurities trapped on the opposite surface) and thus generate 1200 a beam 10 of charged particles 11.
  • the energy of said charged particles 11 may for example be up to sixty or one hundred megaelectronvolts and the doses may for example be of the order of 10 11 to 10 13 particles per pulse.
  • a pulse of such a beam 10 may for example last less than one picosecond, that is to say substantially the duration of the first laser pulse and the current generated can thus be of the order of a few kilo-amps to a few hundred kilo-amps.
  • the electron beam 35 moved in the thickness of the generation target 30 by the first laser pulse 20 may be divergent.
  • the charged particle beam 10 can thus also be divergent.
  • a method of generating a high current focused charged particle beam may comprise the following steps.
  • a step a) comprises the generation of a particle beam 10 , for example by means of the operations described above.
  • a second step b) 2100 comprises the emission of a second laser pulse 40 .
  • This second laser pulse 40 may have a power of a few terawatts, a few tens of terawatts or more.
  • This second laser pulse 40 may have a duration of between ten femtoseconds and a few dozen picoseconds.
  • the second laser pulse 40 may be emitted by a second laser source 41, as shown in FIG. figure 1 or, alternatively, it can be emitted by the first high power laser source 21 as shown in FIG. figure 3a and for example refocused by means of focusing devices 42 such for example as mirrors bypassing the first target 30 .
  • the second step b) 2100 comprises increasing the laser contrast of said second laser pulse 40 as will now be described in more detail.
  • the second laser pulse 40 comprises pre-pulses of second laser pulse 40 propagating just before the main laser pulse of the second laser pulse 40 .
  • a laser contrast enhancement device can in particular increase the laser contrast of the second laser pulse 40 .
  • a device for increasing the laser contrast is a device able to significantly reduce the intensity of the pre-pulses of the second laser pulse 40 with respect to the main laser pulse of the laser. second laser pulse 40 .
  • an incoming ratio is defined as being a ratio between the maximum intensity of the main laser pulse of the second laser pulse 40 and the maximum intensity of the pre-pulses of the second laser pulse 40, for a second laser pulse 40 propagating upstream of the laser contrast enhancement device.
  • an outgoing ratio is defined as being a ratio between the maximum intensity of the main laser pulse of the second laser pulse 40 and the maximum intensity of the second laser pulse pre-pulses 40 for a second laser pulse 40 propagating downstream of the laser contrast enhancer.
  • a device for increasing the laser contrast may be such that the outgoing ratio is approximately ten times greater than the incoming ratio.
  • a device for increasing the laser contrast can for example be such that the outgoing ratio is approximately one hundred times greater than the incoming ratio.
  • the laser contrast enhancement device may in particular be integrated with a focusing device 42 in the following manner.
  • the focusing device 42 may for example comprise a transparent blade for the wavelength of the laser, for example a transparent glass slide.
  • the second laser pulse 40 may strike said focusing device 42 with an angle of incidence deviated from the normal.
  • the second laser pulse 40 may further have a fluence such that pre-pulses of the second laser pulse 40 are of sufficiently low intensity to pass through said focusing device 42, or be reflected only a few percent of intensity.
  • Said plasma on the surface of the focusing device 42 may in particular be able to reflect, for example, to reflect from fifty percent to eighty percent intensity, the main laser pulse of the second laser pulse 40 into a second reflected laser pulse.
  • plasma on a surface of the focusing device is thus meant a plasma mirror capable of reflecting at least a portion of the main laser pulse of the second laser pulse 40 .
  • Said second reflected laser pulse can then constitute the second refocused laser pulse 40 by means of focusing devices 42 for the rest of the present description.
  • Such a device for increasing the laser contrast comprising a transparent blade, may for example be such that the outgoing ratio is approximately ten times greater than the incoming ratio.
  • a device for increasing the laser contrast comprising a transparent plate provided with an antireflection treatment, may for example be such that the outgoing ratio is about a hundred times greater than the incoming ratio.
  • a third step c) 2200 comprises generating a focus magnetic field structure 60 in a second target 50 by means of an interaction of the second laser pulse 40 with said target 50 .
  • Second target 50 is a solid target. It can be a metal target.
  • the second target 50 may for example comprise a part made of gold, aluminum or copper.
  • the second target 50 may, for example, extend substantially along an extension plane Y T2 Z T2 . and comprise a front face 51 and a rear face 53 opposite one another in a direction of thickness X T2 perpendicular to said extension plane Y T2 Z T2 .
  • Said front 51 and rear 53 may be separated by a thickness measured in the thickness direction X T2 and for example between 500 nanometers and a hundred micrometer, for example about ten micrometers.
  • An interaction between the second pulse 40 and the second target 50 can be obtained by at least partially focusing said pulse on said target.
  • the second laser pulse 40 can be focused on the front face 51 of the second target in a focal spot 52 of reduced dimensions, for example from about 6 micrometers in width to half the maximum intensity (“FWHM”) .
  • the second laser pulse 40 can propagate in a propagation direction X L2 , for example substantially collinear with the direction of horizontal thickness X T2 .
  • the propagation direction X L2 of the laser can be inclined with respect to said thickness direction of the second target X T2 .
  • the interaction between the second laser pulse 40 and the second target 50 creates a first electron displacement 55 according to a mechanism similar to the mechanism described above with respect to the interaction between the first laser pulse and the first target.
  • the front face 51 of the second target 50 may be carved, for example by relief patterns, so as to control said first electron displacement 55 .
  • This first electron displacement 55 can be directed from the front face 51 to the rear face 53 of the second target 50 and can generate displacement currents in the second target 50, oriented substantially in the direction of thickness X T2 of the second target, and located in the extension of the focal spot 52 in the thickness direction X T2 of the second target 50.
  • the electron density in an area 54 of the second target 50 located near the focal spot 52 on the front face 51 of the second target can be lowered.
  • This lowering of the electron density can cause a second electron displacement 56, this time since the whole of the second target 50 to said zone 54 of the second target located near the focal spot, so as to restore the neutrality in said zone 54.
  • This second electron displacement 56 can generate return currents in the second target.
  • the displacement currents and the return currents can then generate magnetic fields 60 in the second target 50.
  • These magnetic fields 60 may constitute a focusing magnetic field structure 60 which will now be described.
  • the displacement currents can be oriented in the thickness direction X T2 of the second target 50, the magnetic fields 60 can therefore be perpendicular to said thickness direction X T2 of the second target 50.
  • the return currents can be oriented at least partly in a radial direction to the direction of thickness X T2 of the second target (that is to say having at least one non-zero component in a direction radial to the direction of thickness X T2 ), said magnetic fields 60 may thus comprise at least one non-zero component in a circumferential (or ortho-radial) direction, perpendicular to the thickness direction X T2 of the second target 50 and in a direction radial to said thickness direction X T2 .
  • the magnetic fields 60 located on either side of an axial direction substantially collinear with the thickness direction X T2 of the second target 50 may thus comprise components of opposite directions.
  • the focus magnetic field structure 60 formed by said magnetic fields 60 can thus have axial symmetry with respect to an axis collinear with the thickness direction X T2 of the second target 50.
  • the focusing magnetic field structure 60 formed by the magnetic fields 60 may have a toroidal or solenoidal geometry around the thickness direction X T2 of the second target 50.
  • a charged particle beam of high current 10 as described above may enter at least partially within said magnetic field focusing structure 60.
  • the particle beam 10 may, for example, be propagated along a propagation direction X P , for example a substantially collinear propagation direction with the thickness direction X T2 of the second target 50.
  • the direction of propagation of the particle beam 10 can for example be understood as being the vectorial average of the propagation directions of the particles 11 constituting the beam.
  • the particle beam 10 may be placed so as to penetrate at least partially into the second target 50, for example at its front face 51, for example at the focal spot 52 situated on the front face 51.
  • the particles 11 composing the beam 10 being charged they can be deflected by the focusing magnetic field structure 60.
  • the focusing magnetic field structure 60 generated by the interaction between the second laser pulse 40 and the second target 50 can thus make it possible to focus said charged particle beam 10 by deflecting at least a large fraction of the particles of the beam 11.
  • Said particles 11 may in particular be deflected in the direction of propagation X P of said beam 10. That is to say that the particles 11 may be deflected in a direction radial to the propagation direction X P of the beam.
  • the focusing magnetic field structure 60 can deflect said particle 11 from the beam in the direction of propagation X P of said beam or in the opposite direction, c that is, focusing or defocusing said particle beam.
  • the particle beam 10 can be placed so as to penetrate at least partially into the second target 50 at its rear face 53 and propagate in the second target 50 towards the front face 51.
  • the focusing magnetic field structure 60 is the reverse of the structure 60 described in the embodiment of the present invention.
  • figures 1 and 3a That is to say that the directions of magnetic fields 60 of the structure are opposite to directions of the magnetic fields 60 of the structure of the previous embodiment.
  • the deviation of each of the particles of the beam 11 is thus reversed with respect to the previous embodiment and the beam 10 will be defocused or focused according to the charge of the particles 11 the component inversely with respect to the embodiment of the figures 1 and 3a .
  • the focusing distance of such a focusing device 100 or generation 200 can be modulated.
  • the electron displacements 55, 56 and therefore the currents generated in the second target 50 can be decreased.
  • the generated magnetic fields 60 can be decreased and the deviation of the particles 11 of the particle beam 10 will be smaller.
  • the focus achieved by the focusing device 100 or the generation device 200 can thus be smaller and the focal length higher.
  • the focusing achieved by the focusing device 100 or the generation device 200 can be increased and the focal length decreased.
  • the use of different materials for the second target 50 also makes it possible to influence the focusing achieved by the focusing device 100 or the generation device 200.
  • the skilled person may choose different materials to vary the importance of the generated magnetic field, in particular according to the resistivity of said material and the ionization dynamics and heating of the material as described for example in the article "Dynamic Control over Mega-Ampere Electron Currents in Metals Using Ionization-Driven Resistive Magnetic Field” by Y. Sentoku et al. (Physical Review Letters, 107, 135005, 2011 ) and references cited in this article.
  • a high intensity charged particle beam focusing device 100 or a high intensity focused charged particle beam generating device 200 may further comprise different additional modules.
  • a vacuum chamber 70 can accommodate said devices 100, 200 and in particular at least one laser 40 and a target 50.
  • the vacuum chamber 70 may be provided with a window 71 enabling said beam of charged particles 10 to leave the vacuum chamber.
  • the vacuum chamber 70 may be provided with a collimator 80 for stopping radiation or peripheral particles at the output of the device 100, 200.
  • the vacuum chamber 70 may be provided with a radiation stop module, for example comprising a high atomic number material such as iron, lead or uranium.
  • the vacuum chamber 70 may also be provided with a beam deflection module for separating the charged particle beam and radiation having a near propagation direction, for example a magnetic field-based deflection module.
  • a beam deflection module for separating the charged particle beam and radiation having a near propagation direction, for example a magnetic field-based deflection module.
  • the vacuum chamber 70 can be set and maintained under vacuum by means of one or more vacuum pumps 72.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Lasers (AREA)
  • Particle Accelerators (AREA)
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  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

Claims (9)

  1. Verfahren zur Erzeugung eines fokussierten Strahls mit geladenen Teilchen, umfassend mindestens die folgenden Schritte
    a) Erzeugen (1100, 1200) eines Strahls mit geladenen Teilchen (10), wobei das Erzeugen Folgendes umfasst Aussenden (1100) eines Laserimpulses zur Erzeugung (20) und
    Erzeugen (1200) eines nicht fokussierten Strahls mit Teilchen (10) durch eine Interaktion des Laserimpulses zur Erzeugung mit einem festen Target zur Erzeugung (30),
    b) Aussenden (2100) eines zweiten Laserimpulses (40), wobei der zweite Laserimpuls Vorimpulse und einen Hauptlaserimpuls umfasst,
    c) Erzeugen (2200) einer fokussierenden Magnetfeldstruktur (60) in einem zweiten festen Target (50) durch eine Interaktion des zweiten Laserimpulses mit dem zweiten Target und
    d) Eindringenlassen (2300) des Strahls mit geladenen Teilchen mindestens teilweise in die fokussierende Magnetfeldstruktur,
    dadurch gekennzeichnet, dass während des Schrittes b) ein Laserkontrast des zweiten Laserimpulses (40) durch Verringerung der Intensität der Vorimpulse gegenüber dem Hauptlaserimpuls erhöht wird.
  2. Verfahren nach Anspruch 1, wobei der zweite Laserimpuls (40) eine Leistung aufweist, die im Wesentlichen zwischen einem Terawatt und etwa hundert Terawatt beträgt.
  3. Verfahren nach einem der Ansprüche 1 bis 2, wobei der zweite Laserimpuls (40) eine Dauer aufweist, die im Wesentlichen zwischen etwa zehn Femtosekunden und etwa zehn Pikosekunden beträgt.
  4. Verfahren nach einem der Ansprüche 1 bis 3, wobei während des Schrittes c) der zweite Laserimpuls (40) auf Ebene eines Fokalflecks (52) auf das zweite Target (50) fokalisiert wird und wobei während des Schrittes d) der Strahl mit geladenen Teilchen (10) mindestens teilweise den Fokalfleck durchquert.
  5. Verfahren nach einem der Ansprüche 1 bis 4, wobei das zweite Target (50) mindestens teilweise aus einem Metall hergestellt ist.
  6. Verfahren nach Anspruch 5, wobei das zweite Target (50) mindestens teilweise aus einem Metall hergestellt ist, das ausgewählt ist aus einer Liste, die Gold, Kupfer und Aluminium aufweist.
  7. Verfahren nach einem der Ansprüche 1 bis 6, wobei sich das zweite Target (50) im Wesentlichen in einer Ausdehnungsebene (YT2, ZT2) zwischen einer Vorderseite (51) und einer Rückseite (53) erstreckt, wobei die Seiten einander in einer Dickenrichtung (XT2), die senkrecht zu der Ausdehnungsebene ist, gegenüberliegen und durch eine Dicke getrennt sind, die in der Dickenrichtung gemessen wird,
    und wobei während des Schrittes d) der Strahl (10) das zweite Target im Wesentlichen in der Dickenrichtung durchquert.
  8. Verfahren nach einem der Ansprüche 6 bis 7, wobei die Dicke des zweiten Targets (50) im Wesentlichen zwischen 500 Nanometern und etwa hundert Mikrometern beträgt.
  9. Vorrichtung zur Erzeugung eines fokussierten Strahls mit geladenen Teilchen, umfassend Mittel zum Erzeugen (21, 30) eines Strahls mit geladenen Teilchen (10), wobei die Mittel zum Erzeugen eines Strahls mit geladenen Teilchen (10) Folgendes umfassen:
    - eine Laserquelle (21,41) zum Aussenden eines Laserimpulses zur Erzeugung (20) und
    - ein festes Target zur Erzeugung (30), um einen Strahl mit geladenen Teilchen (10) bei einer Interaktion des Laserimpulses zur Erzeugung mit dem Target zur Erzeugung zu erzeugen,
    wobei die Vorrichtung ferner Folgendes umfasst:
    - eine Laserquelle (21;41) zum Aussenden eines zweiten Laserimpulses (40),
    wobei der zweite Laserimpuls Vorimpulse und einen Hauptlaserimpuls umfasst,
    - ein zweites festes Target (50), um eine fokussierende Magnetfeldstruktur (60) durch eine Interaktion des zweiten Laserimpulses mit dem zweiten Target zu erzeugen, wobei der Strahl mit geladenen Teilchen mindestens teilweise in die Magnetfeldstruktur eindringt,
    dadurch gekennzeichnet, dass die Vorrichtung zur Erzeugung eines fokussierten Strahls mit geladenen Teilchen ferner eine Vorrichtung zur Erhöhung des Laserkontrasts (42) aufweist, um einen Laserkontrast des Laserimpulses (40) durch Verringerung der Intensität der Vorimpulse gegenüber dem Hauptlaserimpuls zu erhöhen.
EP13795817.9A 2012-10-22 2013-10-22 Verfahren und vorrichtung zur erzeugung eines fokussierten starkstromstrahls mit geladenen teilchen Active EP2909841B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1260040A FR2997220B1 (fr) 2012-10-22 2012-10-22 Procede et dispositif de generation d'un faisceau de particules chargees focalise de fort courant
PCT/FR2013/052517 WO2014064380A1 (fr) 2012-10-22 2013-10-22 Procede et dispositif de generation d'un faisceau de particules chargees focalise de fort courant

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EP2909841A1 EP2909841A1 (de) 2015-08-26
EP2909841B1 true EP2909841B1 (de) 2017-07-26

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US (1) US9514908B2 (de)
EP (1) EP2909841B1 (de)
KR (1) KR102111184B1 (de)
CN (1) CN105051828B (de)
CA (1) CA2888713C (de)
FR (1) FR2997220B1 (de)
HU (1) HUE034740T2 (de)
WO (1) WO2014064380A1 (de)

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US3029797A (en) * 1957-07-01 1962-04-17 Springfield Boiler Company Water level controls for boilers
AU2002333856A1 (en) * 2001-09-25 2003-04-14 Forschungsverbund Berlin E.V. Method and device for obtaining images from inside dense plasmas
DE102005012059A1 (de) * 2005-03-16 2006-09-21 Heinrich-Heine-Universität Düsseldorf Laserbestrahlter Hohlzylinder als Linse für Ionenstrahlen
DE102008044781A1 (de) * 2008-08-27 2010-03-04 Friedrich-Schiller-Universität Jena Verfahren und Vorrichtung zur Beschleunigung von Ionen eines Ionenstrahls
JP5374731B2 (ja) * 2008-11-26 2013-12-25 独立行政法人日本原子力研究開発機構 レーザー駆動粒子線照射装置およびレーザー駆動粒子線照射装置の動作方法

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US9514908B2 (en) 2016-12-06
CA2888713C (fr) 2020-11-03
CA2888713A1 (fr) 2014-05-01
FR2997220B1 (fr) 2018-03-23
KR20150097469A (ko) 2015-08-26
CN105051828B (zh) 2018-01-19
CN105051828A (zh) 2015-11-11
US20150303019A1 (en) 2015-10-22
HUE034740T2 (en) 2018-02-28
WO2014064380A1 (fr) 2014-05-01
EP2909841A1 (de) 2015-08-26
KR102111184B1 (ko) 2020-06-09
FR2997220A1 (fr) 2014-04-25

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